24-03-2022 дата публикации
Номер: US20220093815A1
An avalanche photodiode with a diffused junction and the method for its fabrication are disclosed. The method comprising forming, on a substrate, a first high-doped region and a low-doped region; performing selective area growth (SAG) with in-situ etchant on the low-doped region to grow a SAG structure; and diffusing through the SAG structure to form a second high-doped region in the low-doped region. 1. A method for fabricating an avalanche photodiode comprising:forming, on a substrate, a first high-doped region and a low-doped region;performing selective area growth (SAG) with in-situ etchant on the low-doped region to grow a SAG structure; anddiffusing through the SAG structure to form a second high-doped region in the low-doped region.248.-. (canceled)49. The method of claim 1 , wherein the in-situ etchant is selected from CBrCl claim 1 , CBr claim 1 , CCl claim 1 , CHI claim 1 , HCl claim 1 , CHCl claim 1 , PCl claim 1 , AsCl claim 1 , CHCl claim 1 , or CHCl;wherein the SAG epitaxy is performed in an MOCVD reactor at a growth temperature range of about 550° C. to about 600° C.;wherein the SAG is performed to grow SAG structures using materials that match a lattice of the substrate;{'sub': 2', '2, 'wherein the SAG structure has a thickness of about 150 nm to about 250 nm; and/or wherein the substrate is selected from Si, InP, GaAs, Ge, GaP, GaSb, InAs, SiC, AlO, GaN, or InGaAs.'}50. The method of claim 49 , wherein when the substrate is InP claim 49 , the materials used to perform SAG are selected from InP claim 49 , InGaAs claim 49 , or InGaAsP;wherein when the substrate is Si, the material used to perform SAG is Si; orwherein when the substrate is GaAs, the material used to perform SAG is GaAs.51. The method of claim 1 , wherein when the substrate is InP claim 1 , the absorption layer is formed from InGaAs or InGaAsP; optionally claim 1 , when the substrate is InP claim 1 , the absorption layer has a thickness of about 0.2 μm to about 3.0 μm.52. The method of ...
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