Vertical MOSFET and LED monolithic integrated chip and preparation method thereof

The invention relates to a vertical MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and LED (Light Emitting Diode) monolithic integrated chip and a preparation method thereof. The vertical MOSFET and LED monolithic integrated chip structurally comprises an MOSFET structure and an LED structure which are sequentially extended on a substrate material for GaN growth, and a gate dielectric layer and a metal electrode layer which are required by the MOSFET and the LED are prepared through a semiconductor process flow. According to the vertical type MOSFET-LED integrated chip, an MOSFET structure and an LED structure can be formed on the upper surface of a GaN growth material in a one-time epitaxial mode, the drain electrode of the MOSFET and the p electrode of an LED device are shared, the MOSFET structure and the LED structure are connected in series, the current flowing through the MOSFET, namely the current flowing through the LED, is regulated and controlled through the grid electrode ...