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Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Применить Всего найдено 403. Отображено 118.
20-07-2017 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20170207347A1
Автор: Yuta ENDO, Hideomi SUZAWA, Kazuya HANAOKA, Shinya SASAGAWA, Satoru OKAMOTO, ENDO YUTA, SUZAWA HIDEOMI, HANAOKA KAZUYA, SASAGAWA SHINYA, OKAMOTO SATORU, ENDO Yuta, SUZAWA Hideomi, HANAOKA Kazuya, SASAGAWA Shinya, OKAMOTO Satoru
Принадлежит:

A semiconductor device in which parasitic capacitance is reduced is provided. A first oxide insulating layer and a first oxide semiconductor layer are sequentially formed over a first insulating layer. A first conductive layer is formed over the first oxide semiconductor layer and etched to form a second conductive layer. The first oxide insulating layer and the first oxide semiconductor layer are etched with the second conductive layer as a mask to form a second oxide insulating layer and a second oxide semiconductor layer. A planarized insulating layer is formed over the first insulating layer and the second conductive layer. A second insulating layer, a source electrode layer, and a drain electrode layer are formed by etching the planarized insulating layer and the second conductive layer. A third oxide insulating layer, a gate insulating layer, and a gate electrode layer are formed over the second oxide semiconductor layer.

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Номер записи: 1
27-04-2017 дата публикации

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE

Номер: US20170117299A1
Автор: Motomu KURATA, Shinya SASAGAWA, Ryota HODO, Katsuaki TOCHIBAYASHI, Tomoaki MORIWAKA, Jiro NISHIDA, Hidekazu MIYAIRI, Shunpei YAMAZAKI, KURATA MOTOMU, SASAGAWA SHINYA, HODO RYOTA, TOCHIBAYASHI KATSUAKI, MORIWAKA TOMOAKI, NISHIDA JIRO, MIYAIRI HIDEKAZU, YAMAZAKI SHUNPEI, KURATA Motomu, SASAGAWA Shinya, HODO Ryota, TOCHIBAYASHI Katsuaki, MORIWAKA Tomoaki, NISHIDA Jiro, MIYAIRI Hidekazu, YAMAZAKI Shunpei
Принадлежит:

The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, and a fourth layer including a second transistor over the third layer. A first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. A second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to one another through an opening provided in the second insulating film. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The width of a bottom surface of the second conductive film is 5 nm or less. 1. A semiconductor device comprising:a first transistor;a first insulating film over the first transistor;a second insulating film over the first insulating film;a second transistor over the second insulating film;a first conductive film electrically connected to the first transistor; anda second conductive film electrically connected to the first conductive film and the second transistor,wherein the first conductive film penetrates the first insulating film,wherein the second conductive film penetrates one of a source electrode and a drain electrode of the second transistor, a semiconductor film of the second transistor, and the second insulating film,wherein a channel formation region of the first transistor comprises a single crystal semiconductor,wherein a channel formation region of the second transistor comprises an oxide semiconductor, andwherein a width of a bottom surface of the second conductive film is 5 nm or less.2. The semiconductor device according to claim 1 , wherein the first conductive film is in contact with a source region or a drain region of the first ...

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Номер записи: 2
01-06-2017 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20170154789A1
Автор: Shinya SASAGAWA, Motomu KURATA, Katsuaki TOCHIBAYASHI, SASAGAWA SHINYA, KURATA MOTOMU, TOCHIBAYASHI KATSUAKI, SASAGAWA Shinya, KURATA Motomu, TOCHIBAYASHI Katsuaki
Принадлежит:

To provide a highly reliable semiconductor device using an oxide semiconductor. The semiconductor device includes a first electrode layer; a second electrode layer positioned over the first electrode layer and including a stacked-layer structure of a first conductive layer and a second conductive layer; and an oxide semiconductor film and an insulating film positioned between the first electrode layer and the second electrode layer in a thickness direction. The first conductive layer and the insulating film have a first opening portion in a region overlapping with the first electrode layer, The oxide semiconductor film has a second opening portion in a region overlapping with the first opening portion. The second conductive layer is in contact with the first electrode layer exposed in the first opening portion and the second opening portion. 1. A method for manufacturing a semiconductor device comprising the steps of:sequentially forming an oxide semiconductor film, an insulating film, and a first conductive film over an electrode layer over a substrate;forming a resist mask over the first conductive film;etching a part of the first conductive film and a part of the insulating film by using the resist mask to form a first opening portion reaching the oxide semiconductor film in a position overlapping with the electrode layer;removing the resist mask;etching a part of the oxide semiconductor film by using the first conductive film comprising the first opening portion as a mask, to form a second opening portion reaching the electrode layer; andforming a second conductive film over the first conductive film, wherein the second conductive film is in contact with the electrode layer exposed in the first opening portion and the second opening portion.2. The method for manufacturing the semiconductor device according to claim wherein the resist mask is removed by ashing treatment using oxygen plasma.3. The method for manufacturing the semiconductor device according to ...

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Номер записи: 3
02-02-2017 дата публикации

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, MODULE, AND ELECTRONIC DEVICE

Номер: US20170033226A1
Автор: Shunpei YAMAZAKI, Shinya SASAGAWA, Satoru OKAMOTO, Motomu KURATA, Yuta ENDO, YAMAZAKI SHUNPEI, SASAGAWA SHINYA, OKAMOTO SATORU, KURATA MOTOMU, ENDO YUTA, YAMAZAKI Shunpei, SASAGAWA Shinya, OKAMOTO Satoru, KURATA Motomu, ENDO Yuta
Принадлежит:

A semiconductor device which includes a transistor having a miniaturized structure is provided. A first insulator is provided over a stack in which a semiconductor, a first conductor, and a second conductor are stacked in this order. Over the first insulator, an etching mask is formed. Using the etching mask, the first insulator and the second conductor are etched until the first conductor is exposed. After etching the first conductor until the semiconductor is exposed so as to form a groove having a smaller width than the second conductor, a second insulator and a third conductor are formed sequentially. 1. A method for manufacturing a semiconductor device , comprising the steps of:forming a first semiconductor, a first conductor, a second conductor, and a first etching mask sequentially over a first insulator;forming a third conductor by etching part of the second conductor using the first etching mask until the first conductor is exposed;forming a fourth conductor and a second semiconductor by etching part of the first conductor and part of the first semiconductor using at least one of the first etching mask and the third conductor until the first insulator is exposed;removing the first etching mask;forming a second insulator over the first insulator, the second semiconductor, the fourth conductor, and the third conductor;forming a second etching mask over the second insulator;forming a third insulator by etching part of the second insulator using the second etching mask until the third conductor and the first insulator are exposed;forming a fifth conductor and a sixth conductor by etching part of the third conductor using the second etching mask and the third insulator until the fourth conductor is exposed;removing the second etching mask;forming a third etching mask over the third insulator, the fourth conductor, the fifth conductor, and the sixth conductor;forming a seventh conductor and an eighth conductor by etching part of the fourth conductor using the ...

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Номер записи: 4
05-10-2017 дата публикации

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE

Номер: US20170288064A1
Автор: Daigo ITO, Daisuke MATSUBAYASHI, Masaharu NAGAI, Yoshiaki YAMAMOTO, Takashi HAMADA, Yutaka OKAZAKI, Shinya SASAGAWA, Motomu KURATA, Naoto YAMADE, ITO DAIGO, MATSUBAYASHI DAISUKE, NAGAI MASAHARU, YAMAMOTO YOSHIAKI, HAMADA TAKASHI, OKAZAKI YUTAKA, SASAGAWA SHINYA, KURATA MOTOMU, YAMADE NAOTO, ITO Daigo, MATSUBAYASHI Daisuke, NAGAI Masaharu, YAMAMOTO Yoshiaki, HAMADA Takashi, OKAZAKI Yutaka, SASAGAWA Shinya, KURATA Motomu, YAMADE Naoto
Принадлежит:

A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer. The second and third regions each include a region containing an element ...

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Номер записи: 5
23-02-2017 дата публикации

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20170054030A1
Автор: Shunpei YAMAZAKI, Hideomi SUZAWA, Shinya SASAGAWA, YAMAZAKI SHUNPEI, SUZAWA HIDEOMI, SASAGAWA SHINYA, YAMAZAKI Shunpei, SUZAWA Hideomi, SASAGAWA Shinya
Принадлежит:

An object of an embodiment of the present invention is to provide a semiconductor device including a normally-off oxide semiconductor element whose characteristic variation is small in the long term. A cation containing one or more elements selected from oxygen and halogen is added to an oxide semiconductor layer, thereby suppressing elimination of oxygen, reducing hydrogen, or suppressing movement of hydrogen. Accordingly, carriers in the oxide semiconductor can be reduced and the number of the carriers can be kept constant in the long term. As a result, the semiconductor device including the normally-off oxide semiconductor element whose characteristic variation is small in the long term can be provided. 1. (canceled)2. A method for manufacturing a semiconductor device , comprising:forming a gate electrode over an insulator;forming a gate insulating layer over the gate electrode;performing a first plasma treatment to add oxygen to the gate insulating layer;forming a first oxide semiconductor layer over the gate insulating layer;performing a second plasma treatment to add oxygen to the first oxide semiconductor layer;forming a second oxide semiconductor layer over the first oxide semiconductor layer after the second plasma treatment;forming a source electrode and a drain electrode over the second oxide semiconductor layer; andforming an insulating layer over the second oxide semiconductor layer, the source electrode, and the drain electrode,wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer overlaps with the gate electrode, andwherein a power for the second plasma treatment performed to the first oxide semiconductor layer is greater than or equal to 100 W and less than or equal to 2000 W.3. The method for manufacturing a semiconductor device according to claim 2 ,wherein the second plasma treatment is inductively coupled plasma treatment,wherein a power applied to a lower electrode provided on a substrate side in the second ...

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Номер записи: 6
18-08-2016 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20160240690A1
Автор: Shunpei YAMAZAKI, Hideomi SUZAWA, Shinya SASAGAWA, Tetsuhiro TANAKA, YAMAZAKI SHUNPEI, SUZAWA HIDEOMI, SASAGAWA SHINYA, TANAKA TETSUHIRO, YAMAZAKI Shunpei, SUZAWA Hideomi, SASAGAWA Shinya, TANAKA Tetsuhiro
Принадлежит:

A semiconductor device in which an increase in oxygen vacancies in an oxide semiconductor layer can be suppressed is provided. A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device includes an oxide semiconductor layer in a channel formation region, and by the use of an oxide insulating film below and in contact with the oxide semiconductor layer and a gate insulating film over and in contact with the oxide semiconductor layer, oxygen of the oxide insulating film or the gate insulating film is supplied to the oxide semiconductor layer. Further, a conductive nitride is used for a metal film of a source electrode layer and a drain electrode layer, whereby diffusion of oxygen to the metal film is suppressed.

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Номер записи: 7
20-10-2016 дата публикации

METHOD FOR FABRICATING ELECTRODE AND SEMICONDUCTOR DEVICE

Номер: US20160307777A1
Автор: Motomu KURATA, Shinya SASAGAWA, Ryota HODO, Yuta IIDA, Satoru OKAMOTO, KURATA MOTOMU, SASAGAWA SHINYA, HODO RYOTA, IIDA YUTA, OKAMOTO SATORU, KURATA Motomu, SASAGAWA Shinya, HODO Ryota, IIDA Yuta, OKAMOTO Satoru
Принадлежит:

A minute transistor is provided. A transistor having low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. An electrode including the transistor is provided. A novel electrode is provided. The electrode includes a first conductive layer containing a metal, an insulating layer, and a second conductive layer. The insulating layer is formed over the first conductive layer. A mask layer is formed over the insulating layer. The insulating layer is etched using plasma with the mask layer used as a mask, whereby an opening is formed in the insulating layer so as to reach the first conductive layer. Plasma treatment is performed on at least the opening in an oxygen atmosphere. By the plasma treatment, a metal-containing oxide is formed on the first conductive layer in the opening. The oxide is removed, and then the second conductive layer is formed in the opening.

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Номер записи: 8
29-06-2017 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Номер: US20170186858A1
Автор: Shunpei YAMAZAKI, Hideomi SUZAWA, Shinya SASAGAWA, Motomu KURATA, Masashi TSUBUKU, YAMAZAKI SHUNPEI, SUZAWA HIDEOMI, SASAGAWA SHINYA, KURATA MOTOMU, TSUBUKU MASASHI, YAMAZAKI Shunpei, SUZAWA Hideomi, SASAGAWA Shinya, KURATA Motomu, TSUBUKU Masashi
Принадлежит:

The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer. 1. A method for fabricating a semiconductor device , comprising the steps of:stacking a first oxide layer and an oxide semiconductor layer;forming a source electrode layer and a drain electrode layer over the first oxide layer and the oxide semiconductor layer;stacking an oxide film and a gate insulating film over the source electrode layer and the drain electrode layer;forming a gate electrode layer over the oxide film and the gate insulating film;etching the oxide film and the gate insulating film to have an island shape using the gate electrode layer as a mask so that a second oxide layer and a gate insulating layer are formed; andforming an oxide insulating layer over the source electrode layer, the drain electrode layer, the second oxide layer, the gate insulating layer, and the gate electrode layer.2. The method for fabricating the semiconductor device according to claim 1 , wherein each of the first oxide layer claim 1 , the second oxide layer claim 1 , and the oxide semiconductor layer contains indium claim 1 , zinc claim 1 , and gallium.3. A method for fabricating a semiconductor device claim 1 , comprising the steps of:stacking a first oxide layer and an oxide ...

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Номер записи: 9
24-11-2016 дата публикации

WIRING BOARD, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHODS THEREOF

Номер: US20160343587A1
Автор: Motomu KURATA, Shinya SASAGAWA, Fumika TAGUCHI, Yoshinori IEDA, KURATA MOTOMU, SASAGAWA SHINYA, TAGUCHI FUMIKA, IEDA YOSHINORI, KURATA Motomu, SASAGAWA Shinya, TAGUCHI Fumika, IEDA Yoshinori
Принадлежит:

It is an object to reduce defective conduction in a wiring board or a semiconductor device whose integration degree is increased. It is another object to manufacture a highly reliable wiring board or semiconductor device with high yield. In a wiring board or a semiconductor device having a multilayer wiring structure, a conductive layer having a curved surface is used in connection between conductive layers used for the wirings. The top of a conductive layer in a lower layer exposed by removal of an insulating layer therearound has a curved surface, so that coverage of the conductive layer in the lower layer with a conductive layer in an upper layer stacked thereover can be favorable. A conductive layer is etched using a resist mask having a curved surface, so that a conductive layer having a curved surface is formed.

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Номер записи: 10
08-09-2016 дата публикации

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20160260822A1
Автор: Satoru OKAMOTO, Shinya SASAGAWA, OKAMOTO SATORU, SASAGAWA SHINYA, OKAMOTO Satoru, SASAGAWA Shinya
Принадлежит:

A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A semiconductor device including the transistor is provided. A semiconductor device includes an oxide semiconductor, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. The first conductor overlaps with the oxide semiconductor with the first insulator positioned therebetween. The second insulator has an opening and a side surface of the second insulator overlaps with a side surface of the first conductor in the opening with the first insulator positioned therebetween. Part of a surface of the second conductor and part of a surface of the third conductor are in contact with the first insulator in the opening. The oxide semiconductor overlaps with the second conductor and the third conductor.

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Номер записи: 11
10-08-2017 дата публикации

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20170229563A1
Автор: Shinya SASAGAWA, Hitoshi NAKAYAMA, Masashi TSUBUKU, Daigo SHIMADA, SASAGAWA SHINYA, NAKAYAMA HITOSHI, TSUBUKU MASASHI, SHIMADA DAIGO, SASAGAWA Shinya, NAKAYAMA Hitoshi, TSUBUKU Masashi, SHIMADA Daigo
Принадлежит:

When a transistor having bottom gate bottom contact structure is manufactured, for example, a conductive layer constituting a source and a drain has a three-layer structure and two-step etching is performed. In the first etching process, an etching method in which the etching rates for at least the second film and the third film are high is employed, and the first etching process is performed until at least the first film is exposed. In the second etching process, an etching method in which the etching rate for the first film is higher than that in the first etching process and the etching rate for a “layer provided below and in contact with the first film” is lower than that in the first etching process is employed. The side wall of the second film is slightly etched when a resist mask is removed after the second etching process.

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Номер записи: 12
12-10-2017 дата публикации

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20170294453A1
Автор: Hideomi SUZAWA, Shinya SASAGAWA, Taiga MURAOKA, SUZAWA HIDEOMI, SASAGAWA SHINYA, MURAOKA TAIGA, SUZAWA Hideomi, SASAGAWA Shinya, MURAOKA Taiga
Принадлежит:

An object is to establish a processing technique in manufacture of a semiconductor device in which an oxide semiconductor is used. A gate electrode is formed over a substrate, a gate insulating layer is formed over the gate electrode, an oxide semiconductor layer is formed over the gate insulating layer, the oxide semiconductor layer is processed by wet etching to form an island-shaped oxide semiconductor layer, a conductive layer is formed to cover the island-shaped oxide semiconductor layer, the conductive layer is processed by dry etching to form a source electrode, and a drain electrode and part of the island-shaped oxide semiconductor layer is removed by dry etching to form a recessed portion in the island-shaped oxide semiconductor layer.

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Номер записи: 13
06-10-2016 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20160293766A1
Автор: Motomu KURATA, Shinya SASAGAWA, Taiga MURAOKA, Hiroaki HONDA, Takashi HAMADA, KURATA MOTOMU, SASAGAWA SHINYA, MURAOKA TAIGA, HONDA HIROAKI, HAMADA TAKASHI, KURATA Motomu, SASAGAWA Shinya, MURAOKA Taiga, HONDA Hiroaki, HAMADA Takashi
Принадлежит:

A substrate having an insulating surface is prepared; a stacked film including a first oxide semiconductor layer and a second oxide semiconductor layer is formed over the substrate; a mask layer is formed over part of the stacked film and then dry etching treatment is performed, so that the stacked film is removed, with a region provided with the mask layer remaining, and a reaction product is formed on a side surface of the remaining stacked film; the reaction product is removed by wet etching treatment after removal of the mask layer; a source electrode and a drain electrode are formed over the stacked film; and a third oxide semiconductor layer, a gate insulating film, and a gate electrode are stacked and formed in this order over the stacked film, and the source electrode and the drain electrode.

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Номер записи: 14
18-08-2016 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20160240684A1
Автор: Shunpei YAMAZAKI, Yoshinobu ASAMI, Yutaka OKAZAKI, Motomu KURATA, Katsuaki TOCHIBAYASHI, Shinya SASAGAWA, Kensuke YOSHIZUMI, Hideomi SUZAWA, YAMAZAKI SHUNPEI, ASAMI YOSHINOBU, OKAZAKI YUTAKA, KURATA MOTOMU, TOCHIBAYASHI KATSUAKI, SASAGAWA SHINYA, YOSHIZUMI KENSUKE, SUZAWA HIDEOMI, YAMAZAKI Shunpei, ASAMI Yoshinobu, OKAZAKI Yutaka, KURATA Motomu, TOCHIBAYASHI Katsuaki, SASAGAWA Shinya, YOSHIZUMI Kensuke, SUZAWA Hideomi
Принадлежит:

A miniaturized transistor, a transistor with low parasitic capacitance, a transistor with high frequency characteristics, or a semiconductor device including the transistor is provided. The semiconductor device includes a first insulator, an oxide semiconductor over the first insulator, a first conductor and a second conductor that are in contact with the oxide semiconductor, a second insulator that is over the first and second conductors and has an opening reaching the oxide semiconductor, a third insulator over the oxide semiconductor and the second insulator, and a fourth conductor over the third insulator. The first conductor includes a first region and a second region. The second conductor includes a third region and a fourth region. The second region faces the third region with the first conductor and the first insulator interposed therebetween. The second region is thinner than the first region. The third region is thinner than the fourth region.

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Номер записи: 15
13-10-2016 дата публикации

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20160300933A1
Автор: Shinya SASAGAWA, Hitoshi NAKAYAMA, Masashi TSUBUKU, Daigo SHIMADA, SASAGAWA SHINYA, NAKAYAMA HITOSHI, TSUBUKU MASASHI, SHIMADA DAIGO, SASAGAWA Shinya, NAKAYAMA Hitoshi, TSUBUKU Masashi, SHIMADA Daigo
Принадлежит:

When a transistor having bottom gate bottom contact structure is manufactured, for example, a conductive layer constituting a source and a drain has a three-layer structure and two-step etching is performed. In the first etching process, an etching method in which the etching rates for at least the second film and the third film are high is employed, and the first etching process is performed until at least the first film is exposed. In the second etching process, an etching method in which the etching rate for the first film is higher than that in the first etching process and the etching rate for a “layer provided below and in contact with the first film” is lower than that in the first etching process is employed. The side wall of the second film is slightly etched when a resist mask is removed after the second etching process.

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Номер записи: 16
17-11-2016 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20160336457A1
Автор: Shinya SASAGAWA, Motomu KURATA, SASAGAWA SHINYA, KURATA MOTOMU, SASAGAWA Shinya, KURATA Motomu
Принадлежит:

To give favorable electrical characteristics to a semiconductor device. The semiconductor device includes an insulating layer, a semiconductor layer over the insulating layer, a pair of electrodes over the semiconductor layer and each electrically connected to the semiconductor layer, a gate electrode over the semiconductor layer, and a gate insulating layer between the semiconductor layer and the gate electrode. The insulating layer includes an island-shaped projecting portion. A top surface of the projecting portion of the insulating layer is in contact with a bottom surface of the semiconductor layer, and is positioned on an inner side of the semiconductor layer when seen from above. The pair of electrodes covers part of a top surface and part of side surfaces of the semiconductor layer. Furthermore, the gate electrode and the gate insulating layer cover side surfaces of the projecting portion of the insulating layer.

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Номер записи: 17
29-09-2016 дата публикации

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20160284739A1
Автор: Hideomi SUZAWA, Shinya SASAGAWA, Taiga MURAOKA, SUZAWA HIDEOMI, SASAGAWA SHINYA, MURAOKA TAIGA, SUZAWA Hideomi, SASAGAWA Shinya, MURAOKA Taiga
Принадлежит:

An object is to establish a processing technique in manufacture of a semiconductor device in which an oxide semiconductor is used. A gate electrode is formed over a substrate, a gate insulating layer is formed over the gate electrode, an oxide semiconductor layer is formed over the gate insulating layer, the oxide semiconductor layer is processed by wet etching to form an island-shaped oxide semiconductor layer, a conductive layer is formed to cover the island-shaped oxide semiconductor layer, the conductive layer is processed by dry etching to form a source electrode, and a drain electrode and part of the island-shaped oxide semiconductor layer is removed by dry etching to form a recessed portion in the island-shaped oxide semiconductor layer.

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Номер записи: 18
08-12-2016 дата публикации

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20160359050A1
Автор: Shinya SASAGAWA, Motomu KURATA, SASAGAWA SHINYA, KURATA MOTOMU, SASAGAWA Shinya, KURATA Motomu
Принадлежит:

When an oxide semiconductor film is microfabricated, with the use of a hard mask, unevenness of a side surface of the oxide semiconductor film can be suppressed. Specifically, a semiconductor device comprises an oxide semiconductor film over an insulating surface; a first hard mask and a second hard mask over the oxide semiconductor film; a source electrode over the oxide semiconductor film and the first hard mask; a drain electrode over the oxide semiconductor film and the second hard mask; a gate insulating film over the source electrode and the drain electrode; and a gate electrode overlapping with the gate insulating film and the oxide semiconductor film, and the first and second hard masks have conductivity.

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Номер записи: 19
02-03-2017 дата публикации

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20170062619A1
Автор: Shinya SASAGAWA, Takashi HAMADA, Akihisa SHIMOMURA, Satoru OKAMOTO, Katsuaki TOCHIBAYASHI, SASAGAWA SHINYA, HAMADA TAKASHI, SHIMOMURA AKIHISA, OKAMOTO SATORU, TOCHIBAYASHI KATSUAKI, SASAGAWA Shinya, HAMADA Takashi, SHIMOMURA Akihisa, OKAMOTO Satoru, TOCHIBAYASHI Katsuaki
Принадлежит:

A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a high on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device having a high degree of integration is provided. A semiconductor device including an oxide semiconductor; a second insulator; a second conductor; a third conductor; a fourth conductor; a fifth conductor; a first conductor and a first insulator embedded in an opening portion formed in the second insulator, the second conductor, the third conductor, the fourth conductor, and the fifth conductor; a region where a side surface and a bottom surface of the second conductor are in contact with the fourth conductor; and a region where a side surface and a bottom surface of the third conductor are in contact with the fifth conductor. 1. A semiconductor device comprising:an oxide semiconductor;a first conductor;a second conductor;a third conductor;a fourth conductor;a fifth conductor;a first insulator;a second insulator; anda third insulator,wherein the second insulator is provided with an opening portion penetrating through the second insulator,whereina region of a bottom surface of the opening portion is in contact with the oxide semiconductor,whereina region of the first insulator is in contact with a side surface and the bottom surface of the opening portion,whereina region of the first conductor faces the side surface and the bottom surface of the opening portion with the first insulator positioned therebetween,whereinthe second conductor, the third conductor, the fourth conductor, and the fifth conductor are positioned between the oxide semiconductor and the second insulator,whereina region of a side surface of the second conductor and a bottom surface of the second conductor is in contact with the fourth conductor,whereina region of a side surface of the third conductor and a ...

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Номер записи: 20
04-05-2017 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE

Номер: US20170125450A1
Автор: Ryota HODO, Motomu KURATA, Shinya SASAGAWA, Satoru OKAMOTO, Shunpei YAMAZAKI, HODO RYOTA, KURATA MOTOMU, SASAGAWA SHINYA, OKAMOTO SATORU, YAMAZAKI SHUNPEI, HODO Ryota, KURATA Motomu, SASAGAWA Shinya, OKAMOTO Satoru, YAMAZAKI Shunpei
Принадлежит:

First to third insulators are successively formed in this order over a first conductor over a semiconductor substrate; a hard mask with a first opening is formed thereover; a resist mask with a second opening is formed thereover; a third opening is formed in the third insulator; a fourth opening is formed in the second insulator; the resist mask is removed; a fifth opening is formed in the first to third insulators; a second conductor is formed to cover an inner wall and a bottom surface of the fifth opening; a third conductor is formed thereover; polishing treatment is performed so that the hard mask is removed, and that levels of top surfaces of the second and third conductors and the third insulator are substantially equal to each other; and an oxide semiconductor is formed thereover. The second insulator is less permeable to hydrogen than the first and third insulators, the second conductor is less permeable to hydrogen than the third conductor. 1. A method for manufacturing a semiconductor device , comprising the steps of:forming a first conductor over a semiconductor substrate;forming a first insulator over the first conductor;forming a second insulator over the first insulator;forming a third insulator over the second insulator;forming a hard mask with a first opening over the third insulator;forming a resist mask with a second opening over the hard mask;etching the third insulator using the resist mask to form a third opening in the third insulator;etching the second insulator using the resist mask to form a fourth opening in the second insulator;removing the resist mask;etching the first to third insulators using the hard mask to form a fifth opening in the first to third insulators;forming a second conductor to cover an inner wall and a bottom surface of the fifth opening;forming a third conductor over the second conductor to fill the fifth opening;performing polishing treatment on the hard mask, the second conductor, and the third conductor so that the ...

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Номер записи: 21
12-01-2017 дата публикации

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20170012139A1
Автор: Shinya SASAGAWA, Motomu KURATA, Satoru OKAMOTO, Shunpei YAMAZAKI, SASAGAWA SHINYA, KURATA MOTOMU, OKAMOTO SATORU, YAMAZAKI SHUNPEI, SASAGAWA Shinya, KURATA Motomu, OKAMOTO Satoru, YAMAZAKI Shunpei
Принадлежит:

A minute transistor is provided. A transistor with small parasitic capacitance is provided. A transistor with high frequency characteristics is provided. A semiconductor device including the transistor is provided. A semiconductor device includes an oxide semiconductor, a first conductor and a second insulator embedded in a first insulator, a second conductor and a third conductor. Edges of the second conductor and the third conductor facing each other each has a taper angle of 30 degree or more and 90 degree or less. 1. A semiconductor device comprising:an oxide semiconductor;a first conductor;a second conductor;a third conductor;a first insulator; anda second insulator,wherein the oxide semiconductor includes a region overlapping with the second conductor and a region overlapping with the third conductor,wherein the first conductor includes a region overlapping with the oxide semiconductor with the first insulator positioned therebetween,wherein the second insulator includes an opening,wherein the first insulator is in contact with a side surface of the second insulator in the opening,wherein the first conductor includes a region facing the side surface of the second insulator with the first insulator positioned therebetween,wherein a first region of a surface of the second conductor is in contact with the first insulator,wherein a second region of a surface of the third conductor is in contact with the first insulator,wherein in a cross section perpendicular to a bottom surface of the second conductor in a channel width direction, the first region has an angle of 30° or more and 60° or less to the bottom surface of the second conductor, andwherein in a cross section perpendicular to a bottom surface of the third conductor in a channel width direction, the second region has an angle of 30° or more and 60° or less to the bottom surface of the third conductor.2. The semiconductor device according to claim 1 ,wherein the second conductor have a fourth conductor which ...

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Номер записи: 22
22-12-2016 дата публикации

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE

Номер: US20160372606A1
Автор: Daigo ITO, Daisuke MATSUBAYASHI, Masaharu NAGAI, Yoshiaki YAMAMOTO, Takashi HAMADA, Yutaka OKAZAKI, Shinya SASAGAWA, Motomu KURATA, Naoto YAMADE, ITO DAIGO, MATSUBAYASHI DAISUKE, NAGAI MASAHARU, YAMAMOTO YOSHIAKI, HAMADA TAKASHI, OKAZAKI YUTAKA, SASAGAWA SHINYA, KURATA MOTOMU, YAMADE NAOTO, ITO Daigo, MATSUBAYASHI Daisuke, NAGAI Masaharu, YAMAMOTO Yoshiaki, HAMADA Takashi, OKAZAKI Yutaka, SASAGAWA Shinya, KURATA Motomu, YAMADE Naoto
Принадлежит:

A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer. The second and third regions each include a region containing an element ...

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Номер записи: 23
13-07-2017 дата публикации

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20170200828A1
Автор: Yuji EGI, Hideomi SUZAWA, Shinya SASAGAWA, EGI YUJI, SUZAWA HIDEOMI, SASAGAWA SHINYA, EGI Yuji, SUZAWA Hideomi, SASAGAWA Shinya
Принадлежит: Semiconductor Energy Laboratory Co Ltd

In a semiconductor device including a transistor in which an oxide semiconductor layer, a gate insulating layer, and a gate electrode layer on side surfaces of which sidewall insulating layers are provided are stacked in this order, a source electrode layer and a drain electrode layer are provided in contact with the oxide semiconductor layer and the sidewall insulating layers. In a process for manufacturing the semiconductor device, a conductive layer and an interlayer insulating layer are stacked to cover the oxide semiconductor layer, the sidewall insulating layers, and the gate electrode layer. Then, parts of the interlayer insulating layer and the conductive layer over the gate electrode layer are removed by a chemical mechanical polishing method, so that a source electrode layer and a drain electrode layer are formed. Before formation of the gate insulating layer, cleaning treatment is performed on the oxide semiconductor layer.

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Номер записи: 24
17-08-2017 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20170236840A1
Автор: Motomu KURATA, Ryota HODO, Shinya SASAGAWA, Yuki HATA, KURATA MOTOMU, HODO RYOTA, SASAGAWA SHINYA, HATA YUKI, KURATA Motomu, HODO Ryota, SASAGAWA Shinya, HATA Yuki
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To provide a semiconductor device which occupies a small area and is highly integrated. The semiconductor device includes an oxide semiconductor layer, an electrode layer, and a contact plug. The electrode layer includes one end portion in contact with the oxide semiconductor layer and the other end portion facing the one end portion. The other end portion includes a semicircle notch portion when seen from the above. The contact plug is in contact with the semicircle notch portion.

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Номер записи: 25
01-12-2016 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20160351589A1
Автор: Shinya SASAGAWA, Hidekazu MIYAIRI, Shunpei YAMAZAKI, Motomu KURATA, SASAGAWA SHINYA, MIYAIRI HIDEKAZU, YAMAZAKI SHUNPEI, KURATA MOTOMU, SASAGAWA Shinya, MIYAIRI Hidekazu, YAMAZAKI Shunpei, KURATA Motomu
Принадлежит:

A semiconductor device that occupies a small area and has a high degree of integration is provided. The semiconductor device includes a first insulating layer, a conductive layer, and a second insulating layer. The conductive layer is between the first insulating layer and the second insulating layer. The first insulating layer, the conductive layer, and the second insulating layer overlap with each other in a region. A contact plug penetrates the first insulating layer, the conductive layer, and the second insulating layer. In a depth direction from the second insulating layer to the first insulating layer, a diameter of the contact plug changes to a smaller value at an interface between the second insulating layer and the conductive layer.

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Номер записи: 26
28-07-2016 дата публикации

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20160218219A1
Автор: Yoshinobu ASAMI, Yutaka OKAZAKI, Satoru OKAMOTO, Shinya SASAGAWA, ASAMI YOSHINOBU, OKAZAKI YUTAKA, OKAMOTO SATORU, SASAGAWA SHINYA, ASAMI Yoshinobu, OKAZAKI Yutaka, OKAMOTO Satoru, SASAGAWA Shinya
Принадлежит:

A semiconductor device includes a first oxide insulating layer over a first insulating layer, an oxide semiconductor layer over the first oxide insulating layer, a source electrode layer and a drain electrode layer over the oxide semiconductor layer, a second insulating layer over the source electrode layer and the drain electrode layer, a second oxide insulating layer over the oxide semiconductor layer, a gate insulating layer over the second oxide insulating layer, a gate electrode layer over the gate insulating layer, and a third insulating layer over the second insulating layer, the second oxide insulating layer, the gate insulating layer, and the gate electrode layer. A side surface portion of the second insulating layer is in contact with the second oxide insulating layer. The gate electrode layer includes a first region and a second region. The first region has a width larger than that of the second region.

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Номер записи: 27
05-01-2012 дата публикации

THIN FILM TRANSISTOR

Номер: US20120001178A1
Автор: KURATA Motomu, MIYAIRI Hiekazu, Sasagawa Shinya, Tadokoro Asami
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A thin film transistor with favorable electric characteristics is provided. The thin film transistor includes a gate electrode, a gate insulating layer, a semiconductor layer which includes a microcrystalline semiconductor region and an amorphous semiconductor region, an impurity semiconductor layer, a wiring, a first oxide region provided between the microcrystalline semiconductor region and the wiring, and a second oxide region provided between the amorphous semiconductor region and the wiring. wherein a line tangent to the highest inclination of an oxygen profile in the first oxide region (m1) and a line tangent to the highest inclination of an oxygen profile in the second oxide region (m2) satisfy a relation of 1 Подробнее

Номер записи: 28
09-02-2012 дата публикации

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Номер: US20120034743A1
Автор: Sasagawa Shinya, Suzawa Hideomi
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A semiconductor device in which a defect is suppressed and miniaturization is achieved is provided. An insulating film is formed over a flat surface; a first mask is formed over the insulating film; a second mask is formed by performing a slimming process on the first mask; an insulating layer is formed by performing an etching process on the insulating film using the second mask; an oxide semiconductor layer covering the insulating layer is formed; a conductive film covering the oxide semiconductor layer is formed; a surface of the conductive film is flattened by performing a polishing process on the conductive film; an etching process is performed on the conductive film, so that a conductive layer is formed and a surface of the conductive layer is lower than a surface of an uppermost part of the oxide semiconductor layer; a gate insulating film in contact with the conductive layer and the oxide semiconductor layer is formed; and a gate electrode is formed in a region which is over the gate insulating film and overlaps with the insulating layer. 1. A manufacturing method of a semiconductor device comprising the steps of:forming an insulating film over a surface of a substrate;forming a first mask over the insulating film;performing a slimming process on the first mask, so that a second mask is formed;performing an etching process on the insulating film using the second mask, so that an insulating layer is formed;forming an oxide semiconductor layer covering the insulating layer;forming a conductive film covering the oxide semiconductor layer;performing a polishing process on the conductive film, so that a surface of the conductive film is flattened;performing an etching process on the conductive film, so that a conductive layer is formed and a surface of the conductive layer is lower than a surface of an uppermost part of the oxide semiconductor layer;forming a gate insulating film in contact with the conductive layer and the oxide semiconductor layer; andforming a ...

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Номер записи: 29
01-03-2012 дата публикации

ETCHING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20120052661A1
Автор: FUJIKI Hiroshi, FURUKAWA Shinobu, Miyairi Hidekazu, Sasagawa Shinya
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A method for etching is provided in which the etching selectivity of an amorphous semiconductor film to a crystalline semiconductor film is high. Part of a stacked semiconductor film in which an amorphous semiconductor film is provided on a crystalline semiconductor film is etched using a mixed gas of a Br-based gas, a F-based gas, and an oxygen gas, so that part of the crystalline semiconductor film provided in the stacked semiconductor film is exposed. Reduction in the film thickness of the exposed portion can be suppressed by performing the etching in such a manner. Moreover, when etching for forming a back channel portion of a thin film transistor is performed with the method for etching, favorable electric characteristics of the thin film transistor can be obtained. An insulating layer is preferably provided over the thin film transistor. 1. A method for etching comprising:forming a stacked semiconductor film in which an amorphous semiconductor film is on a crystalline semiconductor film; andexposing the crystalline semiconductor film in the stacked semiconductor film by performing etching on a region of the stacked semiconductor film with the use of a mixed gas including at least a Br-based gas, a F-based gas, and an oxygen gas.2. The method for etching according to claim 1 , wherein the etching with the use of the mixed gas is performed with bias power greater than 0 W and less than or equal to 100 W.3. The method for etching according to claim 1 , wherein the Br-based gas is a HBr gas.4. The method for etching according to claim 1 , wherein the F-based gas is a SFgas.5. The method for etching according to claim 1 , wherein a flow ratio of the Br-based gas claim 1 , the F-based gas claim 1 , and the oxygen gas is 25:2:1.6. The method for etching according to claim 1 , wherein the crystalline semiconductor film is a microcrystalline semiconductor film.7. The method for etching according to claim 6 ,wherein the microcrystalline semiconductor film is formed of ...

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Номер записи: 30
08-03-2012 дата публикации

Semiconductor Device and Manufacturing Method Thereof

Номер: US20120058631A1
Автор: IKEDA Kazuko, Sasagawa Shinya, Suzawa Hideomi, Yamazaki Shunpei
Принадлежит:

An object is to provide a semiconductor device with improved reliability and for which a defect due to an end portion of a semiconductor layer provided in an island-shape is prevented, and a manufacturing method thereof. A structure includes an island-shaped semiconductor layer provided over a substrate, an insulating layer provided over a top surface and a side surface of the island-shaped semiconductor layer, and a gate electrode provided over the island-shaped semiconductor layer with the insulating layer interposed therebetween. In the insulating layer provided to be in contact with the island-shaped semiconductor layer, a region that is in contact with the side surface of the island-shaped semiconductor layer is made to have a lower dielectric constant than a region over the top surface of the island-shaped semiconductor layer. 122-. (canceled)23. A manufacturing method of a semiconductor device comprising:forming an island-shaped semiconductor layer over a substrate;forming a first insulating layer to be in contact with a top surface and a side surface of the island-shaped semiconductor layer;forming a second insulating layer that is in contact with the side surface of the island-shaped semiconductor layer by selectively removing the first insulating layer until the top surface of the island-shaped semiconductor layer is exposed;forming a third insulating layer to be in contact with the top surface of the island-shaped semiconductor layer and the second insulating layer; andforming a gate electrode layer over the top surface of the island-shaped semiconductor layer with the third insulating layer interposed therebetween and to cross over the island-shaped semiconductor layer.24. The manufacturing method of the semiconductor device according to claim 23 , wherein the island-shaped semiconductor layer is a polycrystalline semiconductor layer.25. The manufacturing method of the semiconductor device according to claim 23 , wherein the island-shaped semiconductor ...

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Номер записи: 31
15-03-2012 дата публикации

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20120061670A1
Автор: ISHIZUKA Akihiro, Sasagawa Shinya, Suzawa Hideomi
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Described is a method for manufacturing a semiconductor device. A mask is formed over an insulating film and the mask is reduced in size. An insulating film having a projection is formed using the mask reduced in size, and a transistor whose channel length is reduced is formed using the insulating film having a projection. Further, in manufacturing the transistor, a planarization process is performed on a surface of a gate insulating film which overlaps with a top surface of a fine projection. Thus, the transistor can operate at high speed and the reliability can be improved. In addition, the insulating film is processed into a shape having a projection, whereby a source electrode and a drain electrode can be formed in a self-aligned manner. 1. A method for manufacturing a semiconductor device comprising steps of:forming a first conductive film over a first insulating film;forming a first mask over the first conductive film;performing a slimming process on the first mask to form a second mask;performing an etching process on the first insulating film and the first conductive film using the second mask to form a second insulating film having a projection and to form a gate electrode over a top surface of the projection of the second insulating film; forming a gate insulating film over the second insulating film and the gate electrode so as to cover the gate electrode;performing a planarization process on part of a surface of the gate insulating film which overlaps with the top surface of the projection of the second insulating film;forming an oxide semiconductor film over the gate insulating film; andforming a source electrode and a drain electrode over the oxide semiconductor film so as not to overlap with the top surface of the projection of the second insulating film.2. The method for manufacturing a semiconductor device according to claim 1 , wherein a plasma treatment is used in the sliming process.3. The method for manufacturing a semiconductor device according ...

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Номер записи: 32
29-03-2012 дата публикации

Semiconductor device and method for manufacturing the same

Номер: US20120074407A1
Автор: Fujii Teruyuki, IMAHAYASHI Ryota, KURATA Motomu, Sasagawa Shinya, TAGUCHI Fumika, Yamazaki Shunpei
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

An object is to provide a semiconductor device having a novel structure in which a transistor including an oxide semiconductor and a transistor including a semiconductor material other than an oxide semiconductor are stacked. The semiconductor device includes a first transistor, an insulating layer over the first transistor, and a second transistor over the insulating layer. In the semiconductor device, the first transistor includes a first channel formation region, the second transistor includes a second channel formation region, the first channel formation region includes a semiconductor material different from a semiconductor material of the second channel formation region, and the insulating layer includes a surface whose root-mean-square surface roughness is less than or equal to 1 nm. 1. A semiconductor device comprisinga first transistor;an insulating layer over the first transistor; anda second transistor over the insulating layer, a first channel formation region;', 'a first gate insulating layer provided over the first channel formation region;', 'a first gate electrode overlapping with the first channel formation region, over the first gate insulating layer; and', 'a first source electrode electrically connected to the first channel formation region and a first drain electrode electrically connected to the first channel formation region,, 'wherein the first transistor comprises a second channel formation region including an oxide semiconductor;', 'a second source electrode electrically connected to the second channel formation region and a second drain electrode electrically connected to the second channel formation region;', 'a second gate electrode overlapping with the second channel formation region; and', 'a second gate insulating layer provided between the second channel formation region and the second gate electrode,, 'wherein the second transistor compriseswherein the first channel formation region includes a semiconductor material different from a ...

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Номер записи: 33
02-08-2012 дата публикации

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

Номер: US20120193625A1
Автор: KURATA Motomu, Sasagawa Shinya
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

An object is to provide a semiconductor device in which defects are reduced and miniaturization is achieved while favorable characteristics are maintained. A semiconductor layer is formed; a first conductive layer is formed over the semiconductor layer; the first conductive layer is etched with use of a first resist mask to form a second conductive layer having a recessed portion; the first resist mask is reduced in size to form a second resist mask; the second conductive layer is etched with use of the second resist mask to form source and drain electrodes each having a projecting portion with a tapered shape at the peripheries; a gate insulating layer is formed over the source and drain electrodes to be in contact with part of the semiconductor layer; and a gate electrode is formed in a portion over the gate insulating layer and overlapping with the semiconductor layer. 1. A method for manufacturing a semiconductor device comprising the steps of:forming a semiconductor layer;forming a first conductive layer of a single layer over the semiconductor layer;forming a first resist mask with use of light with a wavelength less than or equal to 365 nm over the first conductive layer;etching the first conductive layer with use of the first resist mask to form a second conductive layer having a recessed portion;reducing the first resist mask in size to form a second resist mask;etching the second conductive layer with use of the second resist mask to form a source electrode and a drain electrode each having a projecting portion with a tapered shape at peripheries of the source electrode and the drain electrode;forming a gate insulating layer over the source electrode and the drain electrode and in contact with a part of the semiconductor layer; andforming a gate electrode in a portion which is over the gate insulating layer and overlaps with the semiconductor layer.2. The method for manufacturing a semiconductor device according to claim 1 , wherein the semiconductor layer ...

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Номер записи: 34
06-09-2012 дата публикации

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20120225520A1
Автор: Sasagawa Shinya, Suzawa Hideomi
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

An object is to provide a transistor including an oxide semiconductor having favorable electrical characteristics and a manufacturing method thereof. A semiconductor device includes an oxide semiconductor film and an insulating film over a substrate. An end portion of the oxide semiconductor film is in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. The semiconductor device further includes a gate insulating film over and in contact with the oxide semiconductor film, a gate electrode with a sidewall insulating film over the gate insulating film, and a source electrode and a drain electrode in contact with the sidewall insulating film, the oxide semiconductor film, and the insulating film. 1. A method for manufacturing a semiconductor device , comprising the steps of:sequentially forming a first insulating film, an oxide semiconductor film, and a second insulating film over a substrate;forming an element isolation groove in the first insulating film by etching an element isolation region of the second insulating film, the oxide semiconductor film, and the first insulating film;forming a third insulating film over the second insulating film and the element isolation groove;planarizing the third insulating film to expose the second insulating film and to embed the third insulating film in the element isolation groove;etching the second insulating film to expose the oxide semiconductor film;forming a gate insulating film over the third insulating film and the exposed oxide semiconductor film; andforming a gate electrode over the gate insulating film.2. The method for manufacturing a semiconductor device according to claim 1 , wherein the first insulating film is formed using at least one of silicon oxide claim 1 , silicon oxynitride claim 1 , silicon nitride oxide claim 1 , aluminum oxynitride claim 1 , gallium oxide claim 1 , ...

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Номер записи: 35
20-09-2012 дата публикации

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Номер: US20120235140A1
Автор: Sasagawa Shinya, Suzawa Hideomi
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

In an embodiment, an insulating film is formed over a flat surface; a mask is formed over the insulating film; a slimming process is performed on the mask; an etching process is performed on the insulating film using the mask; a conductive film covering the insulating film is formed; a polishing process is performed on the conductive film and the insulating film, so that the conductive film and the insulating film have equal thicknesses; the conductive film is etched, so that a source electrode and a drain electrode which are thinner than the conductive film are formed; an oxide semiconductor film is formed in contact with the insulating film, the source electrode, and the drain electrode; a gate insulating film covering the oxide semiconductor film is formed; and a gate electrode is formed in a region which is over the gate insulating film and overlaps with the insulating film. 1. A semiconductor device comprising:a source electrode on an insulating surface;a drain electrode on the insulating surface;an insulating film on the insulating surface, wherein at least a portion of the insulating film is between the source electrode and the drain electrode;an oxide semiconductor film over the insulating film, the source electrode, and the drain electrode;a gate insulating film over the oxide semiconductor film; anda gate electrode over the oxide semiconductor film with the gate insulating film interposed therebetween.2. The semiconductor device according to claim 1 , wherein the source electrode and the drain electrode are thinner than the insulating film by 5 nm or more and 20 nm or less.3. The semiconductor device according to claim 1 , wherein the insulating surface has a root-mean-square roughness of less than or equal to 1 nm.4. The semiconductor device according to claim 1 , wherein the oxide semiconductor film comprises an oxide semiconductor material represented by InGaO(ZnO)(m>0).5. The semiconductor device according to claim 1 ,{'sub': 3', 'm, 'wherein the oxide ...

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Номер записи: 36
25-10-2012 дата публикации

Semiconductor device and method for manufacturing semiconductor device

Номер: US20120267623A1
Автор: Akihiro Ishizuka, Atsuo Isobe, Shinya Sasagawa, Toshinari Sasaki
Принадлежит: Semiconductor Energy Laboratory Co Ltd

A semiconductor device having a transistor including an oxide semiconductor film is disclosed. In the semiconductor device, the oxide semiconductor film is provided along a trench formed in an insulating layer. The trench includes a lower end corner portion and an upper end corner portion having a curved shape with a curvature radius of longer than or equal to 20 nm and shorter than or equal to 60 nm, and the oxide semiconductor film is provided in contact with a bottom surface, the lower end corner portion, the upper end corner portion, and an inner wall surface of the trench. The oxide semiconductor film includes a crystal having a c-axis substantially perpendicular to a surface at least over the upper end corner portion.

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Номер записи: 37
25-10-2012 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF

Номер: US20120267624A1
Автор: ISHIZUKA Akihiro, Isobe Atsuo, Sasagawa Shinya, Sasaki Toshinari
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

An insulating layer is provided with a projecting structural body, and a channel formation region of an oxide semiconductor layer is provided in contact with the projecting structural body, whereby the channel formation region is extended in a three dimensional direction (a direction perpendicular to a substrate). Thus, it is possible to miniaturize a transistor and to extend an effective channel length of the transistor. Further, an upper end corner portion of the projecting structural body, where a top surface and a side surface of the projecting structural body intersect with each other, is curved, and the oxide semiconductor layer is formed to include a crystal having a c-axis perpendicular to the curved surface. 1. A semiconductor device comprising:an insulating layer, the insulating layer including a projecting portion;an oxide semiconductor layer over the insulating layer;a gate insulating layer over the oxide semiconductor layer; anda gate electrode over the gate insulating layer,wherein the oxide semiconductor layer faces to a side surface of the projecting portion, a top surface of the projecting portion, and a curved surface of the projecting portion between the side surface and the top surface, andwherein the oxide semiconductor layer includes a crystal having a c-axis substantially perpendicular to the curved surface.2. The semiconductor device according to claim 1 , wherein the curved surface has a radius of curvature greater than or equal to 20 nm and less than or equal to 60 nm.3. The semiconductor device according to claim 1 , wherein the oxide semiconductor layer includes an In—Ga—Zn—O based oxide semiconductor.4. The semiconductor device according to claim 1 , wherein the gate electrode faces to the side surface with the gate insulating layer interposed therebetween.5. The semiconductor device according to claim 1 , wherein the projecting portion has a tapered shape.6. A semiconductor device comprising:an insulating layer including a projecting ...

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Номер записи: 38
25-10-2012 дата публикации

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Номер: US20120270375A1
Автор: ISHIZUKA Akihiro, Sasagawa Shinya
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

To provide a semiconductor device which prevents defects and achieves miniaturization. A projecting portion or a trench (a groove portion) is formed in an insulating layer and a channel formation region of a semiconductor layer is provided in contact with the projecting portion or the trench, so that the channel formation region is extended in a direction perpendicular to a substrate. Thus, miniaturization of the transistor can be achieved and an effective channel length can be extended. In addition, before formation of the semiconductor layer, an upper-end corner portion of the projecting portion or the trench with which the semiconductor layer is in contact is subjected to round chamfering, so that a thin semiconductor layer can be formed with good coverage. 1. A method for manufacturing a semiconductor device comprising the steps of:forming an insulating layer;etching the insulating layer to form a region having a curved surface with a radius of curvature of greater than or equal to 20 nm and less than or equal to 60 nm;forming a semiconductor layer over the insulating layer so as to be in contact with at least the region having the curved surface;forming a source electrode and a drain electrode electrically connected to the semiconductor layer;forming a gate insulating layer over the semiconductor layer; andforming a gate electrode over the gate insulating layer.2. The method for manufacturing a semiconductor device according to claim 1 , wherein a wide-gap semiconductor layer is formed as the semiconductor layer.3. The method for manufacturing a semiconductor device according to claim 1 , wherein an oxide semiconductor layer is formed as the semiconductor layer.4. A method for manufacturing a semiconductor device comprising the steps of:forming an insulating layer;etching the insulating layer to form a first region with a first thickness and a second region with a second thickness smaller than the first thickness;processing an edge portion of the first region ...

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Номер записи: 39
15-11-2012 дата публикации

Semiconductor device and manufacturing method thereof

Номер: US20120286261A1
Автор: Akihiro Ishizuka, Shinya Sasagawa, Takehisa Hatano
Принадлежит: Semiconductor Energy Laboratory Co Ltd

In a transistor including a wide band gap semiconductor layer as a semiconductor layer, a wide band gap semiconductor layer is separated into an island shape by an insulating layer with passivation properties for preventing atmospheric components from permeating. The edge portion of the island shape wide band gap semiconductor layer is in contact with the insulating film; thus, moisture or atmospheric components can be prevented from entering from the edge portion of the semiconductor layer to the wide band gap semiconductor layer.

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Номер записи: 40
15-11-2012 дата публикации

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20120286266A1
Автор: HOSOBA Miyuki, ITO Shunichi, MURAOKA Taiga, Sasagawa Shinya, Suzawa Hideomi
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. In etching steps, a first etching step is performed by wet etching in which an etchant is used, and a second etching step is performed by dry etching in which an etching gas is used. 1. A semiconductor device comprising:a gate electrode layer over a substrate;a gate insulating layer over the gate electrode layer;an oxide semiconductor layer over the gate electrode layer with the gate insulating layer therebetween, the oxide semiconductor layer comprising indium;a source electrode layer over the oxide semiconductor layer; anda drain electrode layer over the oxide semiconductor layer,wherein an upper surface of the oxide semiconductor layer between the source electrode layer and the drain electrode layer is etched so that a portion of the oxide semiconductor layer is thinner than portions of the oxide semiconductor layer below the source electrode layer and the drain electrode layer, andwherein first portions of the oxide semiconductor layer extend beyond outer side edges of the source electrode layer and the drain electrode layer,wherein the first portions of the oxide semiconductor layer are thinner than second portions of the oxide semiconductor layer, the second portions being below the source electrode layer and the drain electrode layer, andwherein end portions of the oxide semiconductor layer have curved surfaces.2. The semiconductor device according to claim 1 , wherein the oxide ...

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Номер записи: 41
15-11-2012 дата публикации

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20120286267A1
Автор: MURAOKA Taiga, Sasagawa Shinya, Suzawa Hideomi
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. The etching step is performed by dry etching in which an etching gas is used. 1. A semiconductor device comprising:a gate electrode layer over a substrate;a gate insulating layer over the gate electrode layer;an oxide semiconductor layer over the gate electrode layer with the gate insulating layer therebetween, the oxide semiconductor layer comprising indium;a source electrode layer over the oxide semiconductor layer; anda drain electrode layer over the oxide semiconductor layer,wherein an upper surface of the oxide semiconductor layer between the source electrode layer and the drain electrode layer is etched so that a portion of the oxide semiconductor layer is thinner than portions of the oxide semiconductor layer below the source electrode layer and the drain electrode layer, andwherein first portions of the oxide semiconductor layer extend beyond outer side edges of the source electrode layer and the drain electrode layer, andwherein the first portions of the oxide semiconductor layer are thinner than second portions of the oxide semiconductor layer, the second portions being below the source electrode layer and the drain electrode layer.2. The semiconductor device according to claim 1 , wherein the oxide semiconductor layer further includes gallium claim 1 , and zinc.3. The semiconductor device according to claim 1 , wherein the oxide semiconductor layer is in direct contact with the source electrode layer and the drain electrode layer.4. The semiconductor device according to claim 1 , wherein the oxide semiconductor layer has an amorphous structure.5. A semiconductor device comprising:a gate electrode layer over a ...

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Номер записи: 42
15-11-2012 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20120288993A1
Автор: FUJIKI Hiroshi, NAKAYAMA Hitoshi, Sasagawa Shinya
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

To establish a processing technique in manufacture of a semiconductor device including an In—Sn—Zn—O-based semiconductor. An In—Sn—Zn—O-based semiconductor layer is selectively etched by dry etching with the use of a gas containing chlorine such as Cl, BCl, SiCl, or the like. In formation of a source electrode layer and a drain electrode layer, a conductive layer on and in contact with the In—Sn—Zn—O-based semiconductor layer can be selectively etched with little removal of the In—Sn—Zn—O-based semiconductor layer with the use of a gas containing oxygen or fluorine in addition to a gas containing chlorine.

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Номер записи: 43
20-12-2012 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20120319100A1
Автор: Koezuka Junichi, OHNO Shinji, Sasagawa Shinya, Sato Yuichi, Yoshioka Kyoko
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A miniaturized semiconductor device in which an increase in power consumption is suppressed and a method for manufacturing the semiconductor device are provided. A highly reliable semiconductor device having stable electric characteristics and a method for manufacturing the semiconductor device are provided. An oxide semiconductor film is irradiated with ions accelerated by an electric field in order to reduce the average surface roughness of a surface of the oxide semiconductor film. Consequently, an increase in the leakage current and power consumption of a transistor can be suppressed. Moreover, by performing heat treatment so that the oxide semiconductor film includes a crystal having a c-axis substantially perpendicular to the surface of the oxide semiconductor film, a change in electric characteristics of the oxide semiconductor film due to irradiation with visible light or ultraviolet light can be suppressed. 1. A method for manufacturing a semiconductor device comprising the steps of:forming an oxide semiconductor film over an insulating surface;irradiating the oxide semiconductor film with an oxygen ion so that an average surface roughness of a surface of the oxide semiconductor film is reduced;forming a gate insulating film over the oxide semiconductor film after irradiating the oxide semiconductor film with the oxygen ion;forming a gate electrode over the gate insulating film so as to overlap with the oxide semiconductor film; andperforming heat treatment on the oxide semiconductor film after the irradiation of the oxide semiconductor film with the oxygen ion so that an oxide semiconductor film including a crystal having a c-axis substantially perpendicular to the surface of the oxide semiconductor film is formed.2. The method for manufacturing a semiconductor device according to claim 1 ,wherein the average surface roughness of the surface of the oxide semiconductor film is made greater than or equal to 0.1 nm and less than or equal to 0.6 nm by the ...

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Номер записи: 44
20-12-2012 дата публикации

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Номер: US20120319101A1
Автор: FUJIKI Hiroshi, IEDA Yoshinori, Sasagawa Shinya
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A first insulating film in contact with an oxide semiconductor film and a second insulating film are stacked in this order over an electrode film of a transistor including the oxide semiconductor film, an etching mask is formed over the second insulating film, an opening portion exposing the electrode film is formed by etching a portion of the first insulating film and a portion of the second insulating film, the opening portion exposing the electrode film is exposed to argon plasma, the etching mask is removed, and a conductive film is formed in the opening portion exposing the electrode film. The first insulating film is an insulating film whose oxygen is partly released by heating. The second insulating film is less easily etched than the first insulating film and has a lower gas-permeability than the first insulating film. 1. A semiconductor device comprising:a semiconductor film that comprises a channel formation region comprising an oxide semiconductor;an electrode adjacent to the semiconductor film; anda first insulating film over the semiconductor film and the electrode;a second insulating film over the first insulating film;a conductive film over the second insulating film, wherein the conductive film is electrically connected to the electrode through an opening of the first insulating film and an opening of the second insulating film,wherein a first angle between a first side surface of the first insulating film and a bottom surface of the first insulating film is larger than a second angle between a second side surface of the second insulating film and a bottom surface of the second insulating film, andwherein the first side surface and the second side surface are in contact with the conductive film.2. The semiconductor device according to claim 1 , further comprising a gate electrode over the semiconductor film.3. The semiconductor device according to claim 1 , further comprising:a third insulating film over the second insulating film,wherein the first ...

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Номер записи: 45
24-01-2013 дата публикации

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20130020575A1
Автор: ISHIZUKA Akihiro, Sasagawa Shinya
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

To provide a miniaturized semiconductor device with stable electric characteristics in which a short-channel effect is suppressed. Further, to provide a manufacturing method of the semiconductor device. The semiconductor device (transistor) including a trench formed in an oxide insulating layer, an oxide semiconductor film formed along the trench, a source electrode and a drain electrode which are in contact with the oxide semiconductor film, a gate insulating layer over the oxide semiconductor film, a gate electrode over the gate insulating layer is provided. The lower corner portions of the trench are curved, and the side portions of the trench have side surfaces substantially perpendicular to the top surface of the oxide insulating layer. Further, the width between the upper ends of the trench is greater than or equal to 1 time and less than or equal to 1.5 times the width between the side surfaces of the trench. 1. A semiconductor device comprising:an oxide insulating layer;a trench formed in the oxide insulating layer;an oxide semiconductor film in contact with a bottom portion and side portions of the trench;a source electrode and a drain electrode electrically connected to the oxide semiconductor film;a gate insulating layer over the oxide semiconductor film; anda gate electrode over the gate insulating layer,wherein the side portions have side surfaces substantially perpendicular to a top surface of the oxide insulating layer,wherein a width between upper ends of the trench is greater than or equal to 1 time and less than or equal to 1.5 times a width between the side surfaces , andwherein at least one of the bottom portion and a lower corner portion in which the bottom portion meets one of the side portions is curved.2. The semiconductor device according to claim 1 , wherein a curvature radius of the lower corner portion is 20 nm to 70 nm claim 1 , inclusive.3. The semiconductor device according to claim 1 , wherein an upper corner portion of the oxide ...

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Номер записи: 46
21-03-2013 дата публикации

POWER STORAGE DEVICE

Номер: US20130071762A1
Автор: KURIKI Kazutaka, Oguni Teppei, Osada Takeshi, Sasagawa Shinya, Tajima Ryota, Yamazaki Shunpei
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A power storage device which has high charge/discharge capacity and less deterioration in battery characteristics due to charge/discharge and can perform charge/discharge at high speed is provided. A power storage device includes a negative electrode. The negative electrode includes a current collector and an active material layer provided over the current collector. The active material layer includes a plurality of protrusions protruding from the current collector and a graphene provided over the plurality of protrusions. Axes of the plurality of protrusions are oriented in the same direction. A common portion may be provided between the current collector and the plurality of protrusions. 1. A power storage device comprising a negative electrode , a common portion;', 'a plurality of protrusions protruding from the common portion; and', 'a layer including a graphene provided over the common portion and the plurality of protrusions., 'the negative electrode comprising2. The power storage device according to claim 1 , wherein axes of the plurality of protrusions are oriented in a same direction.3. The power storage device according to claim 1 , wherein in a lateral cross-sectional shape claim 1 , an area of a bottom portion of each of the plurality of protrusions which is in contact with the common portion is larger than an area of a top portion of each of the plurality of protrusions.4. The power storage device according to claim 1 , wherein in a longitudinal cross-sectional shape claim 1 , a width of a bottom portion of each of the plurality of protrusions which is in contact with the common portion is larger than a width of a top portion of each of the plurality of protrusions.5. The power storage device according to claim 1 , wherein the common portion or the plurality of protrusions comprise silicon.6. The power storage device according to claim 1 , wherein the plurality of protrusions each have a columnar shape claim 1 , a conical or pyramidal shape claim 1 , a ...

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Номер записи: 47
28-03-2013 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20130075732A1
Автор: Hanaoka Kazuya, ISHIZUKA Akihiro, Isobe Atsuo, Koezuka Junichi, KURATA Motomu, Saito Toshihiko, Sasagawa Shinya
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A miniaturized transistor having high electric characteristics is provided with high yield. In a semiconductor device including the transistor, high performance, high reliability, and high productivity are achieved. In a semiconductor device including a transistor in which an oxide semiconductor film, a gate insulating film, and a gate electrode layer on side surfaces of which sidewall insulating layers are provided are stacked in this order, source and drain electrode layers are provided in contact with the oxide semiconductor film and the sidewall insulating layers. In a process for manufacturing the semiconductor device, a conductive film and an interlayer insulating film are stacked to cover the oxide semiconductor film, the sidewall insulating layers, and the gate electrode layer, and the interlayer insulating film and the conductive film over the gate electrode layer are removed by a chemical mechanical polishing method, so that the source and drain electrode layers are formed. 1. A semiconductor device comprising:an oxide semiconductor film including a channel formation region over an oxide insulating film;a gate insulating film over the oxide semiconductor film;a gate electrode layer over the gate insulating film;an insulating film over the gate electrode layer;sidewall insulating layers covering side surfaces of the gate electrode layer and side surfaces of the insulating film;a source electrode layer and a drain electrode layer in contact with the oxide semiconductor film, side surfaces of the gate insulating film, and side surfaces of the sidewall insulating layers; andan interlayer insulating film over the source electrode layer and the drain electrode layer,wherein a top surface of the source electrode layer and a top surface of the drain electrode layer are lower than a top surface of the insulating film, a top surface of the sidewall insulating layers, and a top surface of the interlayer insulating film,wherein the top surface of the source electrode ...

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Номер записи: 48
18-04-2013 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20130092924A1
Автор: KURATA Motomu, Sasagawa Shinya
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A miniaturized transistor having excellent electrical characteristics is provided with high yield. Further, a semiconductor device including the transistor and having high performance and high reliability is manufactured with high productivity. In a semiconductor device including a transistor in which an oxide semiconductor film including a channel formation region and low-resistance regions between which the channel formation region is sandwiched, a gate insulating film, and a gate electrode layer whose top surface and side surface are covered with an insulating film including an aluminum oxide film are stacked, a source electrode layer and a drain electrode layer are in contact with part of the oxide semiconductor film and the top surface and a side surface of the insulating film including an aluminum oxide film. 1. A semiconductor device comprising:an oxide semiconductor film over an oxide insulating film;a gate insulating film over the oxide semiconductor film;a gate electrode layer over the gate insulating film overlapping with the oxide semiconductor film;an insulating film including an aluminum oxide film covering a top surface and a side surface of the gate electrode layer; anda wiring layer in contact with the oxide semiconductor film and a part of a top surface and a side surface of the insulating film including the aluminum oxide film.2. A semiconductor device comprising:an oxide semiconductor film over an oxide insulating film;a gate insulating film over the oxide semiconductor film;a gate electrode layer over the gate insulating film overlapping with the oxide semiconductor film;an insulating film including an aluminum oxide film covering a top surface and a side surface of the gate electrode layer;an interlayer insulating layer over the oxide semiconductor film, the gate insulating film, the gate electrode layer, and the insulating film including the aluminum oxide film, wherein an opening reaching the oxide semiconductor film is provided in the ...

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Номер записи: 49
18-04-2013 дата публикации

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер: US20130092925A1
Автор: Hanaoka Kazuya, ISHIZUKA Akihiro, Isobe Atsuo, Koezuka Junichi, KURATA Motomu, Saito Toshihiko, Sasagawa Shinya
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A miniaturized transistor is provided with high yield. Further, a semiconductor device which has high on-state characteristics and which is capable of high-speed response and high-speed operation is provided. In the semiconductor device, an oxide semiconductor layer, a gate insulating layer, a gate electrode layer, an insulating layer, a conductive film, and an interlayer insulating layer are stacked in this order. A source electrode layer and a drain electrode layer are formed in a self-aligned manner by cutting the conductive film so that the conductive film over the gate electrode layer and the conductive layer is removed and the conductive film is divided. An electrode layer which is in contact with the oxide semiconductor layer and overlaps with a region in contact with the source electrode layer and the drain electrode layer is provided. 1. A semiconductor device comprising:a first electrode layer and a second electrode layer;an oxide semiconductor layer over the first electrode layer and the second electrode layer, wherein the oxide semiconductor layer includes a first region electrically connected to the first electrode layer, a second region electrically connected to the second electrode layer, and a channel formation region between the first region and the second region;a gate insulating layer over the oxide semiconductor layer;a gate electrode layer over the gate insulating layer, wherein the gate electrode layer overlaps with the channel formation region;a first insulating layer over the gate electrode layer;sidewall insulating layers covering side surfaces of the gate electrode layer and side surfaces of the first insulating layer;a source electrode layer and a drain electrode layer which are in contact with the oxide semiconductor layer, side surfaces of the gate insulating layer, and side surfaces of the sidewall insulating layer;a second insulating layer over the source electrode layer and the drain electrode layer;a third insulating layer over the ...

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Номер записи: 50
18-04-2013 дата публикации

METHODS FOR MANUFACTURING THIN FILM TRANSISTOR AND DISPLAY DEVICE

Номер: US20130095587A1
Автор: ISHIZUKA Akihiro, Miyairi Hidekazu, Sasagawa Shinya
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

The present invention provides a method for manufacturing a highly reliable semiconductor device with a small amount of leakage current. In a method for manufacturing a thin film transistor, etching is conducted using a resist mask to form a back channel portion in the thin film transistor, the resist mask is removed, a part of the back channel is etched to remove etching residue and the like left over the back channel portion, whereby leakage current caused by the residue and the like can be reduced. The etching step of the back channel portion can be conducted by dry etching using non-bias. 1. A method for manufacturing a thin film transistor , comprising the steps of:forming a gate insulating layer over a gate electrode layer;forming a semiconductor layer over the gate insulating layer;forming an impurity semiconductor layer over the semiconductor layer;forming a patterned semiconductor layer comprising the semiconductor layer and the impurity semiconductor layer by using a first resist mask, the patterned semiconductor layer overlapping at least a part of the gate electrode layer;forming a conductive layer over the gate insulating layer and the patterned semiconductor layer;etching the conductive layer to form source and drain electrode layers by using a second resist mask over the conductive layer;etching the impurity semiconductor layer of the patterned semiconductor layer, to expose a part of the semiconductor layer so that a back channel portion in the thin film transistor is formed;removing the second resist mask after etching the impurity semiconductor layer of the patterned semiconductor layer; andperforming a plasma treatment on a surface of the back channel portion to remove contamination materials from the surface of the back channel portion, after removing the second resist mask.2. The method for manufacturing the thin film transistor according to claim 1 , wherein the step of performing the plasma treatment is conducted with non-bias applied.3. The ...

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Номер записи: 51
09-05-2013 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20130112968A1
Автор: FUJIKI Hiroshi, Sasagawa Shinya
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A semiconductor device which achieves miniaturization with favorable characteristics maintained is provided. In addition, a miniaturized semiconductor device is provided with high yield. In a semiconductor device including an oxide semiconductor, the contact resistance between the oxide semiconductor and the source electrode or the drain electrode is reduced with miniaturization advanced. Specifically, an oxide semiconductor film is processed to be an island-shaped oxide semiconductor film whose side surface has a tapered shape. Further, the side surface has a taper angle greater than or equal to 1° and less than 10°, and at least part of the source electrode and the drain electrode is in contact with the side surfaces of the oxide semiconductor film. With such a structure, the contact region of the oxide semiconductor film and the source electrode or the drain electrode is increased, whereby the contact resistance is reduced. 1. A semiconductor device comprising:an oxide semiconductor film having island-shaped;a gate insulating film over the oxide semiconductor film;a gate electrode being in contact with the gate insulating film and provided at a position overlapping with the oxide semiconductor film;an interlayer insulating film over the gate insulating film and the gate electrode;an opening formed in the gate insulating film and the interlayer insulating film and reaching the oxide semiconductor film; anda source electrode or a drain electrode formed to fill the opening and being in contact with the oxide semiconductor film,wherein a side surface of the oxide semiconductor film has a taper angle greater than or equal to 1° and less than 10°, andwherein at least part of the source electrode or the drain electrode is in contact with the side surface.2. The semiconductor device according to claim 1 ,wherein the side surface of the oxide semiconductor film has a plurality of taper angles, andwherein at least one of the plurality of taper angles is greater than or ...

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Номер записи: 52
16-05-2013 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20130119375A1
Автор: KURATA Motomu, Sasagawa Shinya
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Provided is a miniaturized transistor having high electrical characteristics. The transistor includes a source electrode layer in contact with one side surface of the oxide semiconductor layer in the channel-length direction and a drain electrode layer in contact with the other side surface thereof. The transistor further includes a gate electrode layer in a region overlapping with a channel formation region with a gate insulating layer provided therebetween and a conductive layer having a function as part of the gate electrode layer in a region overlapping with the source electrode layer or the drain electrode layer with the gate insulating layer provided therebetween and in contact with a side surface of the gate electrode layer. With such a structure, an Lov region is formed with a scaled-down channel length maintained. 1. A semiconductor device comprising:a source electrode layer and a drain electrode layer;an oxide semiconductor layer comprising a first impurity region, a second impurity region, and a channel formation region sandwiched between the first impurity region and the second impurity region, wherein a side surface of the first impurity region is in contact with the source electrode layer in a channel-length direction and a side surface of the second impurity region is in contact with the drain electrode layer in the channel-length direction;a gate insulating layer over and in contact with the oxide semiconductor layer, the source electrode layer, and the drain electrode layer;a gate electrode layer over the gate insulating layer, wherein the gate electrode layer overlaps with the channel formation region;a conductive layer having a first portion in contact with a side surface of the gate electrode layer and a second portion in contact with an upper surface of the gate insulating layer, wherein at least part of the second portion overlaps with the source electrode layer and the drain electrode layer; anda sidewall insulating layer in contact with an ...

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Номер записи: 53
16-05-2013 дата публикации

Semiconductor device and manufacturing method thereof

Номер: US20130119376A1
Автор: Hideaki Kuwabara, Mari Terashima, Motomu Kurata, Shinya Sasagawa
Принадлежит: Semiconductor Energy Laboratory Co Ltd

To provide a highly reliable semiconductor device including a transistor using an oxide semiconductor. After a source electrode layer and a drain electrode layer are formed, an island-like oxide semiconductor layer is formed in a gap between these electrode layers so that a side surface of the oxide semiconductor layer is covered with a wiring, whereby light is prevented from entering the oxide semiconductor layer through the side surface. Further, a gate electrode layer is formed over the oxide semiconductor layer with a gate insulating layer interposed therebetween and impurities are introduced with the gate electrode layer used as a mask. Then, a conductive layer is provided on a side surface of the gate electrode layer in the channel length direction, whereby an Lov region is formed while maintaining a scaled-down channel length and entry of light from above into the oxide semiconductor layer is prevented.

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Номер записи: 54
30-05-2013 дата публикации

Method for manufacturing semiconductor device

Номер: US20130137213A1
Автор: Hideomi Suzawa, Shinya Sasagawa, Yuji EGI
Принадлежит: Semiconductor Energy Laboratory Co Ltd

In a semiconductor device including a transistor in which an oxide semiconductor layer, a gate insulating layer, and a gate electrode layer on side surfaces of which sidewall insulating layers are provided are stacked in this order, a source electrode layer and a drain electrode layer are provided in contact with the oxide semiconductor layer and the sidewall insulating layers. In a process for manufacturing the semiconductor device, a conductive layer and an interlayer insulating layer are stacked to cover the oxide semiconductor layer, the sidewall insulating layers, and the gate electrode layer. Then, parts of the interlayer insulating layer and the conductive layer over the gate electrode layer are removed by a chemical mechanical polishing method, so that a source electrode layer and a drain electrode layer are formed. Before formation of the gate insulating layer, cleaning treatment is performed on the oxide semiconductor layer.

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Номер записи: 55
06-06-2013 дата публикации

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20130140555A1
Автор: Koezuka Junichi, KURATA Motomu, MURAOKA Taiga, Sasagawa Shinya, TANAKA Tetsuhiro
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Provided is a miniaturized transistor with stable and high electrical characteristics with high yield. In a semiconductor device including the transistor in which an oxide semiconductor film, a gate insulating film, and a gate electrode layer are stacked in this order, a first sidewall insulating layer is provided in contact with a side surface of the gate electrode layer, and a second sidewall insulating layer is provided to cover a side surface of the first sidewall insulating layer. The first sidewall insulating layer is an aluminum oxide film in which a crevice with an even shape is formed on its side surface. The second sidewall insulating layer is provided to cover the crevice. A source electrode layer and a drain electrode layer are provided in contact with the oxide semiconductor film and the second sidewall insulating layer. 1. A semiconductor device comprising:an oxide insulating film over a substrate;an oxide semiconductor layer over the oxide insulating film;a gate insulating film over the oxide semiconductor layer;a gate electrode layer over the oxide semiconductor layer with the gate insulating film therebetween;a first sidewall insulating layer over the gate insulating film to cover a first portion of a top surface of the gate insulating film and a second portion of a side surface of the gate electrode layer;a second sidewall insulating over the gate insulating film to cover a side surface of the first sidewall insulating layer;a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer, andan interlayer insulating film over the source electrode layer and the drain electrode layer,wherein the first sidewall insulating layer includes a crevice shape between the first portion and the second portion.2. The semiconductor device according to claim 1 ,wherein the first sidewall insulating layer comprises an aluminum oxide film.3. The semiconductor device according to claim 1 ,wherein the gate electrode layer ...

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Номер записи: 56
27-06-2013 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20130161605A1
Автор: Sasagawa Shinya, Suzawa Hideomi
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A bottom-gate transistor with a short channel length and a method for manufacturing the transistor are provided. A bottom-gate transistor with a short channel length in which portions of a source electrode and a drain electrode which are proximate to a channel formation region are thinner than other portions thereof was devised. In addition, the portions of the source electrode and the drain electrode which are proximate to the channel formation region are formed in a later step than the other portions thereof, whereby a bottom-gate transistor with a short channel length can be manufactured. 1. A method for manufacturing a semiconductor device , comprising the steps of:forming a gate electrode layer;forming a gate insulating layer over the gate electrode layer;forming a semiconductor layer over the gate insulating layer;forming a first conductive layer over the semiconductor layer;forming a second conductive layer over the first conductive layer so that the first conductive layer is exposed in a region which overlaps with a channel formation region of the semiconductor layer;forming a protective layer over the second conductive layer;forming a hard mask layer over the protective layer;forming a resist pattern over the hard mask layer, the resist pattern including an opening which overlaps with the semiconductor layer;etching the hard mask layer using the resist pattern;etching the protective layer using the hard mask layer; andetching the first conductive layer using the hard mask layer.2. The method for manufacturing the semiconductor device according to claim 1 ,wherein the semiconductor layer includes an oxide including In, an element M, and Zn, andwherein the element M is at least one element selected from the group consisting of Ga, Sn, Hf, Al, Zr, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.3. The method for manufacturing the semiconductor device according to claim 1 , wherein the opening in the resist pattern is formed by an electron beam.4. ...

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Номер записи: 57
27-06-2013 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20130161621A1
Автор: Hanaoka Kazuya, Isobe Atsuo, KURATA Motomu, Okazaki Yutaka, Sasagawa Shinya
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A first conductive film overlapping with an oxide semiconductor film is formed over a gate insulating film, a gate electrode is formed by selectively etching the first conductive film using a resist subjected to electron beam exposure, a first insulating film is formed over the gate insulating film and the gate electrode, removing a part of the first insulating film while the gate electrode is not exposed, an anti-reflective film is formed over the first insulating film, the anti-reflective film, the first insulating film and the gate insulating film are selectively etched using a resist subjected to electron beam exposure, and a source electrode in contact with one end of the oxide semiconductor film and one end of the first insulating film and a drain electrode in contact with the other end of the oxide semiconductor film and the other end of the first insulating film are formed. 1. A semiconductor device comprising:an oxide semiconductor film over an insulating surface;a gate insulating film over the oxide semiconductor film;a gate electrode provided over the gate insulating film and overlapping with the oxide semiconductor film;a first insulating film over the gate insulating film and the gate electrode;a source electrode in contact with one end of the oxide semiconductor film and one end of the first insulating film;a drain electrode in contact with the other end of the oxide semiconductor film and the other end of the first insulating film; anda second insulating film over the source electrode and the drain electrode,wherein heights of top surfaces of the source electrode and the drain electrode are substantially the same as heights of top surfaces of the first insulating film and the second insulating film, andwherein a channel length of the oxide semiconductor film is greater than or equal to 1 nm and less than or equal to 30 nm.2. The semiconductor device according to claim 1 ,wherein a distance between the gate electrode and a contact region in which the ...

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Номер записи: 58
10-10-2013 дата публикации

PROCESSING METHOD OF STACKED-LAYER FILM AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Номер: US20130267068A1
Автор: Hanaoka Kazuya, Sasagawa Shinya
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

In a processing method of a stacked-layer film in which a metal film is provided on an oxide insulating film, plasma containing an oxygen ion is generated by applying high-frequency power with power density greater than or equal to 0.59 W/cmand less than or equal to 1.18 W/cmto the stacked-layer film side under an atmosphere containing oxygen in which pressure is greater than or equal to 5 Pa and less than or equal to 15 Pa, the metal film is oxidized by the oxygen ion, and an oxide insulating film containing excess oxygen is formed by supplying oxygen to the oxide insulating film. 1. A method for processing a stacked-layer film comprising a first oxide insulating film and a metal film over the first oxide insulating film , the method comprising the steps of:generating plasma containing an oxygen ion under an atmosphere containing oxygen; andirradiating the stacked-layer film with the oxygen ion so that a metal oxide film is formed by oxidizing the metal film and a second oxide insulating film containing excess oxygen is formed by supplying an oxygen atom to the first oxide insulating film,{'sup': 2', '2, 'wherein the plasma is generated under a pressure greater than or equal to 5 Pa and less than or equal to 15 Pa, and with a power density greater than or equal to 0.59 W/cmand less than or equal to 1.18 W/cm.'}2. The method according to claim 1 ,wherein the metal film is formed of at least one selected from the group consisting of magnesium, aluminum, yttrium, hafnium, and zirconium with a thickness greater than or equal to 3 nm and less than or equal to 15 nm.3. The method according to claim 1 ,wherein an average surface roughness of the metal oxide film is less than or equal to 0.1 nm.4. The method according to claim 1 ,wherein the second oxide insulating film is capable of releasing oxygen by heat treatment.5. A method for manufacturing a semiconductor device claim 1 , comprising the steps of:forming a stacked-layer film comprising a first oxide insulating film ...

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Номер записи: 59
24-10-2013 дата публикации

METHODS FOR MANUFACTURING THIN FILM TRANSISTOR AND DISPLAY DEVICE

Номер: US20130280867A1
Автор: ISHIZUKA Akihiro, Miyairi Hidekazu, Sasagawa Shinya
Принадлежит:

The present invention provides a method for manufacturing a highly reliable semiconductor device with a small amount of leakage current. In a method for manufacturing a thin film transistor, etching is conducted using a resist mask to form a back channel portion in the thin film transistor, the resist mask is removed, a part of the back channel is etched to remove etching residue and the like left over the back channel portion, whereby leakage current caused by the residue and the like can be reduced. The etching step of the back channel portion can be conducted by dry etching using non-bias. 1. A method for manufacturing a thin film transistor , comprising the steps of:forming a gate insulating layer over a gate electrode layer;forming a semiconductor layer over the gate insulating layer;forming an impurity semiconductor layer over the semiconductor layer;forming a conductive layer over the impurity semiconductor layer;etching portions of the semiconductor layer, the impurity semiconductor layer, and the conductive layer by using a first resist mask having a depression portion to form a patterned semiconductor layer overlapping at least a part of the gate electrode layer wherein the first resist mask is simultaneously etched so that the depression portion reaches the conductive layer, thereby forming a second resist mask;etching the conductive layer to form source and drain electrode layers by using the second resist mask over the conductive layer;etching the impurity semiconductor layer of the patterned semiconductor layer, to expose a part of the semiconductor layer so that a back channel portion in the thin film transistor is formed;removing the second resist mask after etching the impurity semiconductor layer of the patterned semiconductor layer; andperforming a plasma treatment on a surface of the back channel portion to remove contamination materials from the surface of the back channel portion, after removing the second resist mask.2. The method for ...

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Номер записи: 60
02-01-2014 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20140004656A1
Автор: FUJIKI Hiroshi, Sasagawa Shinya
Принадлежит:

Provided is a method for manufacturing a transistor by which the defective shape of a semiconductor device is prevented in the case where a source electrode layer and a drain electrode layer are formed on an oxide semiconductor film. A source electrode layer and a drain electrode layer are formed each having a cross-sectional shape with which disconnection of a gate insulating film is unlikely to occur even when the gate insulating film over the source electrode layer and the drain electrode layer has a small thickness. An oxide semiconductor film having a crystal structure over an insulating surface is formed; an electrode layer on the oxide semiconductor film is formed; and a thickness of an exposed portion of the oxide semiconductor film is reduced by exposing the oxide semiconductor film to dilute hydrofluoric acid with a concentration higher than 0.0001% and lower than or equal to 0.25%. 1. A method for manufacturing a semiconductor device , comprising the steps of:forming an oxide semiconductor layer;forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer; andexposing a part of the oxide semiconductor layer to diluted hydrofluoric acid after the formation of the source electrode layer and the drain electrode layer,wherein a concentration of the diluted hydrofluoric acid is higher than 0.0001% and lower than or equal to 0.25%.2. The method according to claim 1 , wherein the oxide semiconductor layer has a crystal structure.3. The method according to claim 1 , wherein the step of forming the oxide semiconductor layer comprises the steps of:forming a first oxide semiconductor layer;forming a second oxide semiconductor layer over the first oxide semiconductor layer; andforming a third oxide semiconductor layer over the second oxide semiconductor layer.4. The method according to claim 1 , wherein the oxide semiconductor layer comprises indium claim 1 , gallium claim 1 , and zinc.5. The method according to claim 1 , further ...

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Номер записи: 61
20-02-2014 дата публикации

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20140051209A1
Автор: ISHIZUKA Akihiro, Sasagawa Shinya, Suzawa Hideomi
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Described is a method for manufacturing a semiconductor device. A mask is formed over an insulating film and the mask is reduced in size. An insulating film having a projection is formed using the mask reduced in size, and a transistor whose channel length is reduced is formed using the insulating film having a projection. Further, in manufacturing the transistor, a planarization process is performed on a surface of a gate insulating film which overlaps with a top surface of a fine projection. Thus, the transistor can operate at high speed and the reliability can be improved. In addition, the insulating film is processed into a shape having a projection, whereby a source electrode and a drain electrode can be formed in a self-aligned manner. 1. A method for manufacturing a semiconductor device comprising steps of:forming a first conductive film over a first insulating film;forming a first mask over the first conductive film;performing a slimming process on the first mask to form a second mask;performing an etching process on the first insulating film and the first conductive film using the second mask to form a second insulating film having a projection and to form a gate electrode over a top surface of the projection of the second insulating film;forming a gate insulating film over the second insulating film and the gate electrode so as to cover the gate electrode;performing a planarization process on part of a surface of the gate insulating film which overlaps with the top surface of the projection of the second insulating film;forming an oxide semiconductor film over the gate insulating film; andforming a source electrode and a drain electrode over the oxide semiconductor film so as not to overlap with the top surface of the projection of the second insulating film.2. The method for manufacturing a semiconductor device according to claim 1 , wherein a plasma treatment is used in the slimming process.3. The method for manufacturing a semiconductor device according ...

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Номер записи: 62
20-03-2014 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Номер: US20140077205A1
Автор: KURATA Motomu, Sasagawa Shinya, Suzawa Hideomi, TSUBUKU Masashi, Yamazaki Shunpei
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer. 1. A semiconductor device , comprising:a first oxide layer;an oxide semiconductor layer over the first oxide layer;a source electrode layer and a drain electrode layer which are in contact with the oxide semiconductor layer;a second oxide layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer;a gate insulating layer over the second oxide layer; anda gate electrode layer over the gate insulating layer,wherein an end portion of the second oxide layer and an end portion of the gate insulating layer overlap with a part of the source electrode layer and a part of the drain electrode layer.2. The semiconductor device according to claim 1 , wherein a top end portion of the second oxide layer is aligned with a bottom end portion of the gate insulating layer claim 1 , and a top end portion of the gate insulating layer is aligned with a bottom end portion of the gate electrode layer.3. The semiconductor device according to claim 1 , further comprising a sidewall insulating layer in contact with a side surface of the gate electrode layer.4. The semiconductor device according to claim 3 , wherein a top end portion of the second oxide ...

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Номер записи: 63
07-01-2016 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20160005872A1
Автор: HATA Yuki, HODO Ryota, KURATA Motomu, Sasagawa Shinya
Принадлежит:

To provide a semiconductor device which occupies a small area and is highly integrated. The semiconductor device includes an oxide semiconductor layer, an electrode layer, and a contact plug. The electrode layer includes one end portion in contact with the oxide semiconductor layer and the other end portion facing the one end portion. The other end portion includes a semicircle notch portion when seen from the above. The contact plug is in contact with the semicircle notch portion. 1. A semiconductor device comprising:an oxide semiconductor layer;an electrode layer; anda contact plug,wherein the electrode layer includes one end portion in contact with the oxide semiconductor layer and the other end portion facing the one end portion,wherein the other end portion includes a semicircle notch portion when seen from the above, andwherein the contact plug is in contact with the semicircle notch portion.2. The semiconductor device according to claim 1 ,wherein the contact plug includes a region in contact with an upper surface of the electrode layer.3. The semiconductor device according to claim 1 ,wherein the oxide semiconductor layer comprises In, Zn, and M (M is Al, Ti, Sn, Ga, Y, Zr, La, Ce, Nd, or Hf).4. An electronic device comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the semiconductor device according to ; and'}at least one of a display device, a housing, a microphone, a speaker, an operation key, a camera, and a lens.5. A semiconductor device comprising:an oxide semiconductor layer;an electrode layer; anda contact plug,wherein the electrode layer is in contact with an upper surface of the oxide semiconductor layer,wherein an end portion of the electrode layer and an end portion of the oxide semiconductor layer overlap with each other in a region,wherein the end portions each include a semicircle notch portion when seen from the above, andwherein the contact plug is in contact with the semicircle notch portion.6. The semiconductor device according ...

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Номер записи: 64
04-01-2018 дата публикации

Wiring Layer and Manufacturing Method Therefor

Номер: US20180006061A1
Автор: MORIWAKA Tomoaki, OHTSUKI Takashi, Okazaki Yutaka, Sasagawa Shinya
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

To provide a miniaturized semiconductor device with low power consumption. A method for manufacturing a wiring layer includes the following steps: forming a second insulator over a first insulator; forming a third insulator over the second insulator; forming an opening in the third insulator so that it reaches the second insulator; forming a first conductor over the third insulator and in the opening; forming a second conductor over the first conductor; and after forming the second conductor, performing polishing treatment to remove portions of the first and second conductors above a top surface of the third insulator. An end of the first conductor is at a level lower than or equal to the top level of the opening. The top surface of the second conductor is at a level lower than or equal to that of the end of the first conductor. 1. A semiconductor device comprising:a first insulator;a second insulator over the first insulator;a third insulator over the second insulator;an opening in the third insulator;a first conductor in the opening,a second conductor over the first conductor and in the opening;a fourth insulator over the third insulator and the second conductor;an oxide semiconductor over the fourth insulator;a third conductor and a fourth conductor over the oxide semiconductor;a fifth insulator over the oxide semiconductor, the third conductor and the fourth conductor; anda fifth conductor over the fifth insulator,wherein an end of the first conductor is at a level lower than or equal to a top level of the opening,wherein the second conductor comprises nitrogen, andwherein the second conductor allows less oxygen to pass therethrough than the first conductor.2. The semiconductor device according to claim 1 ,wherein the first conductor comprises tungsten.3. The semiconductor device according to claim 1 ,wherein the second conductor comprises titan or tantalum.4. The semiconductor device according to claim 1 , wherein the first conductor comprises a concave surface ...

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Номер записи: 65
02-01-2020 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20200006328A1
Автор: ENDO Yuta, Nagatsuka Shuhei, Sasagawa Shinya, Yamazaki Shunpei
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A favorable semiconductor device for miniaturization and high integration is provided. One embodiment of the present invention includes a first oxide including a first region and second region adjacent to each other, a third region and a fourth region with the first region and the second region provided therebetween, a second oxide over the first region, a first insulator over the second oxide, a first conductor over the first insulator, a second insulator over the second oxide and on side surfaces of the first insulator and the first conductor, a third insulator over the second region and on a side surface of the second insulator, and a second conductor over the second region with the third insulator provided therebetween. A part of the third insulator is positioned between the second conductor and the side surface of the second insulator. 1. A semiconductor device comprising: a first region and a second region adjacent to each other; and', 'a third region and a fourth region with the first region and the second region provided between the third region and the fourth region;, 'a first oxide comprisinga second oxide over the first region;a first insulator over the second oxide;a first conductor over the first insulator;a second insulator over the second oxide, the second insulator being in contact with a side surface of the first insulator and a side surface of the first conductor;a third insulator over the second region, the third insulator being in contact with a side surface of the second insulator; anda second conductor over the second region with the third insulator provided between the second conductor and the second region,wherein a part of the third insulator is positioned between the second conductor and the side surface of the second insulator.2. The semiconductor device according to claim 1 ,wherein the first oxide is over a third conductor, andwherein a bottom surface of the fourth region is in contact with a top surface of the third conductor.3. The ...

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Номер записи: 66
15-01-2015 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20150014679A1
Автор: KURATA Motomu, Sasagawa Shinya
Принадлежит:

To give favorable electrical characteristics to a semiconductor device. The semiconductor device includes an insulating layer, a semiconductor layer over the insulating layer, a pair of electrodes over the semiconductor layer and each electrically connected to the semiconductor layer, a gate electrode over the semiconductor layer, and a gate insulating layer between the semiconductor layer and the gate electrode. The insulating layer includes an island-shaped projecting portion. A top surface of the projecting portion of the insulating layer is in contact with a bottom surface of the semiconductor layer, and is positioned on an inner side of the semiconductor layer when seen from above. The pair of electrodes covers part of a top surface and part of side surfaces of the semiconductor layer. Furthermore, the gate electrode and the gate insulating layer cover side surfaces of the projecting portion of the insulating layer. 1. A semiconductor device comprising:an insulating layer;a semiconductor layer over the insulating layer;a first electrode and a second electrode over and electrically connected to the semiconductor layer;a gate electrode over the semiconductor layer; anda gate insulating layer between the semiconductor layer and the gate electrode,wherein the insulating layer includes a projecting portion,wherein a top surface of the projecting portion is positioned inside an outline of the semiconductor layer when seen in a plan view,wherein the first electrode and the second electrode cover first parts of a top surface and first parts of side surfaces of the semiconductor layer, andwherein the gate electrode and the gate insulating layer cover a second part of the top surface and second parts of the side surfaces of the semiconductor layer and first side surfaces of the projecting portion of the insulating layer.2. The semiconductor device according to claim 1 ,wherein the semiconductor layer comprises an oxide semiconductor.3. The semiconductor device according ...

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Номер записи: 67
11-01-2018 дата публикации

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20180013004A1
Автор: Hamada Takashi, OKAMOTO Satoru, Sasagawa Shinya, Shimomura Akihisa, TOCHIBAYASHI Katsuaki
Принадлежит:

A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a high on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device having a high degree of integration is provided. A semiconductor device including an oxide semiconductor; a second insulator; a second conductor; a third conductor; a fourth conductor; a fifth conductor; a first conductor and a first insulator embedded in an opening portion formed in the second insulator, the second conductor, the third conductor, the fourth conductor, and the fifth conductor; a region where a side surface and a bottom surface of the second conductor are in contact with the fourth conductor; and a region where a side surface and a bottom surface of the third conductor are in contact with the fifth conductor. 1. A semiconductor device comprising:an oxide semiconductor;a first conductor;a second conductor;a third conductor;a fourth conductor;a fifth conductor;a first insulator;a second insulator; anda third insulator,wherein the second insulator is provided with an opening portion penetrating through the second insulator,wherein a region of a bottom surface of the opening portion is in contact with the oxide semiconductor,wherein a region of the first insulator is in contact with a side surface and the bottom surface of the opening portion,wherein a region of the first conductor faces the side surface and the bottom surface of the opening portion with the first insulator positioned therebetween,wherein the second conductor, the third conductor, the fourth conductor, and the fifth conductor are positioned between the oxide semiconductor and the second insulator,wherein a region of a side surface of the second conductor and a bottom surface of the second conductor is in contact with the fourth conductor,wherein a region of a side surface of the third conductor and ...

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Номер записи: 68
15-01-2015 дата публикации

POWER STORAGE DEVICE

Номер: US20150017541A1
Автор: KURIKI Kazutaka, Oguni Teppei, Osada Takeshi, Sasagawa Shinya, Tajima Ryota, Yamazaki Shunpei
Принадлежит:

A power storage device which has high charge/discharge capacity and less deterioration in battery characteristics due to charge/discharge and can perform charge/discharge at high speed is provided. A power storage device includes a negative electrode. The negative electrode includes a current collector and an active material layer provided over the current collector. The active material layer includes a plurality of protrusions protruding from the current collector and a graphene provided over the plurality of protrusions. Axes of the plurality of protrusions are oriented in the same direction. A common portion may be provided between the current collector and the plurality of protrusions. 1. (canceled)2. A power storage device comprising: a common portion;', 'a first protrusion protruding from the common portion', 'a second protrusion protruding from the common portion;', 'a first insulating layer over the first protrusion; and', 'a second insulating layer over the second protrusion,, 'an active material layer comprising, 'a negative electrode comprisinga positive electrode in contact with the first insulating layer and the second insulating layer; anda first electrolyte,wherein each of the first insulating layer and the second insulating layer comprises a material which has an insulating property and does not react with the first electrolyte.3. The power storage device according to claim 2 ,wherein the active material layer further comprises a layer including a graphene over the common portion and the first protrusion, andwherein the layer including the graphene in contact with the first insulating layer and the first protrusion.4. The power storage device according to claim 2 , wherein each of the first protrusion and the second protrusion comprises an active material.5. The power storage device according to claim 4 , wherein the active material is silicon.6. The power storage device according to claim 2 , wherein each of the first insulating layer and the second ...

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Номер записи: 69
17-04-2014 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20140103337A1
Автор: Sasagawa Shinya, Suzawa Hideomi, TANAKA Tetsuhiro, Yamazaki Shunpei
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

To provide a highly reliable semiconductor device including an oxide semiconductor by suppression of change in its electrical characteristics. Oxygen is supplied from a base insulating layer provided below an oxide semiconductor layer and a gate insulating layer provided over the oxide semiconductor layer to a region where a channel is formed, whereby oxygen vacancies which might be generated in the channel are filled. Further, extraction of oxygen from the oxide semiconductor layer by a source electrode layer or a drain electrode layer in the vicinity of the channel formed in the oxide semiconductor layer is suppressed, whereby oxygen vacancies which might be generated in a channel are suppressed. 1. A semiconductor device comprising:a base insulating layer;a first oxide layer over the base insulating layer;an oxide semiconductor layer over the first oxide layer;a second oxide layer over the oxide semiconductor layer;a first source electrode layer and a first drain electrode layer each of which is in contact with a top surface of the second oxide layer;a second source electrode layer and a second drain electrode layer over the first source electrode layer and the first drain electrode layer, respectively, and in contact with the top surface of the second oxide layer;a gate insulating layer over the second source electrode layer and the second drain electrode layer, and in contact with the top surface of the second oxide layer between the second source electrode layer and the second drain electrode layer; anda gate electrode layer overlapping with the oxide semiconductor layer with the gate insulating layer provided therebetween,wherein the base insulating layer and the gate insulating layer are in contact with each other.2. The semiconductor device according to claim 1 ,wherein the gate electrode layer overlaps with the first source electrode layer and the first drain electrode layer.3. The semiconductor device according to claim 1 ,wherein the gate electrode layer ...

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Номер записи: 70
17-04-2014 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20140103338A1
Автор: Sasagawa Shinya, Suzawa Hideomi, TANAKA Tetsuhiro, Yamazaki Shunpei
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A semiconductor device in which an increase in oxygen vacancies in an oxide semiconductor layer can be suppressed is provided. A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device includes an oxide semiconductor layer in a channel formation region, and by the use of an oxide insulating film below and in contact with the oxide semiconductor layer and a gate insulating film over and in contact with the oxide semiconductor layer, oxygen of the oxide insulating film or the gate insulating film is supplied to the oxide semiconductor layer. Further, a conductive nitride is used for a metal film of a source electrode layer and a drain electrode layer, whereby diffusion of oxygen to the metal film is suppressed. 1. A semiconductor device comprising:an oxide insulating film;an oxide semiconductor layer over the oxide insulating film;a first source electrode layer and a first drain electrode layer in contact with the oxide semiconductor layer;a second source electrode layer and a second drain electrode layer covering the first source electrode layer and the first drain electrode layer, respectively, and being in contact with the oxide semiconductor layer;a gate insulating film over the oxide insulating film, the oxide semiconductor layer, the second source electrode layer, and the second drain electrode layer;a gate electrode layer over the gate insulating film and overlapping with the oxide semiconductor layer; anda protective insulating film over the gate insulating film and the gate electrode layer,wherein the gate insulating film is partly in contact with the oxide insulating film in an exterior region of the second source electrode layer and the second drain electrode layer.2. The semiconductor device according to claim 1 , wherein the first source electrode layer and the first drain electrode layer comprise at least one material selected from Al claim 1 , Cr claim 1 , Cu ...

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Номер записи: 71
17-04-2014 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20140103340A1
Автор: Sasagawa Shinya, Suzawa Hideomi, TANAKA Tetsuhiro, Yamazaki Shunpei
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A semiconductor device in which an increase in oxygen vacancies in an oxide semiconductor layer can be suppressed is provided. A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device includes an oxide semiconductor layer in a channel formation region, and by the use of an oxide insulating film below and in contact with the oxide semiconductor layer and a gate insulating film over and in contact with the oxide semiconductor layer, oxygen of the oxide insulating film or the gate insulating film is supplied to the oxide semiconductor layer. Further, a conductive nitride is used for metal films of a source electrode layer, a drain electrode layer, and a gate electrode layer, whereby diffusion of oxygen to the metal films is suppressed. 1. A semiconductor device comprising:an oxide insulating film;an oxide semiconductor layer over the oxide insulating film;a first source electrode layer in contact with the oxide semiconductor layer;a first drain electrode layer in contact with the oxide semiconductor layer;a second source electrode layer in contact with the oxide semiconductor layer, the second source electrode layer covering the first source electrode layer;a second drain electrode layer in contact with the oxide semiconductor layer, the second drain electrode layer covering the first drain electrode layer;a gate insulating film over the oxide semiconductor layer, the second source electrode layer, and the second drain electrode layer;a first gate electrode layer over the gate insulating film;a second gate electrode layer over the first gate electrode layer; anda protective insulating film over the second gate electrode layer,wherein the gate insulating film is in contact with the oxide insulating film, andwherein each of the second source electrode layer, the second drain electrode layer, and the first gate electrode layer comprises nitrogen.2. The semiconductor device ...

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Номер записи: 72
17-04-2014 дата публикации

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20140106504A1
Автор: Sasagawa Shinya, Suzawa Hideomi, TANAKA Tetsuhiro, Yamazaki Shunpei
Принадлежит:

To provide a semiconductor device in which an increase in oxygen vacancies is suppressed. To provide a semiconductor device with favorable electrical characteristics. To provide a highly reliable semiconductor device. In a semiconductor device in which a channel formation region is included in an oxide semiconductor layer, an oxide insulating film below and in contact with the oxide semiconductor layer and a gate insulating film over and in contact with the oxide semiconductor layer are used to supply oxygen of the gate insulating film, which is introduced by an ion implantation method, to the oxide semiconductor layer. 1. A method for manufacturing a semiconductor device , including the steps of:forming an oxide semiconductor layer over an oxide insulating film;forming a first source electrode layer and a first drain electrode layer in contact with the oxide semiconductor layer;forming a conductive film over the first source electrode layer and the first drain electrode layer;forming a resist mask over the conductive film by performing electron beam exposure;forming a second source electrode layer and a second drain electrode layer covering the first source electrode layer and the first drain electrode layer, respectively, and being in contact with the oxide semiconductor layer by etching the conductive film using the resist mask;forming a gate insulating film over the oxide insulating film, the oxide semiconductor layer, the second source electrode layer, and the second drain electrode layer;introducing oxygen into the gate insulating film; andsupplying the oxygen of the gate insulating film to the oxide semiconductor layer.2. The method for manufacturing a semiconductor device according to claim 1 , wherein the introduction of oxygen into the gate insulating film is performed by an ion implantation method.3. The method for manufacturing a semiconductor device according to claim 1 , further comprising the step of:forming a gate electrode over the gate insulating ...

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Номер записи: 73
29-01-2015 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20150028330A1
Автор: HONDO Suguru, Sasagawa Shinya, Suzawa Hideomi, Yamazaki Shunpei
Принадлежит:

Provided is a semiconductor device in which a deterioration in electrical characteristics which becomes more noticeable as miniaturization can be suppressed. The semiconductor device includes a first oxide semiconductor film over an insulating surface; a second oxide semiconductor film over the first oxide semiconductor film; a source electrode and a drain electrode in contact with each side surface of the first oxide semiconductor film and the second oxide semiconductor film; a first insulating film and a second insulating film over the source electrode and the drain electrode; a third oxide semiconductor film over the second oxide semiconductor film, the source electrode, and the drain electrode; a gate insulating film over the third oxide semiconductor film; and a gate electrode in contact with an upper surface of the gate insulating film and facing an upper surface and the side surface of the second oxide semiconductor film. 1. A semiconductor device comprising:a first insulating film;a first oxide semiconductor film over the first insulating film;a second oxide semiconductor film over the first oxide semiconductor film;a first conductive film and a second conductive film over the first insulating film;a third oxide semiconductor film over the second oxide semiconductor film;a second insulating film over the third oxide semiconductor film; anda third conductive film over the second insulating film,wherein each of the first conductive film and the second conductive film is in contact with a first side surface of the second oxide semiconductor film, andwherein, in a channel width direction, the third conductive film faces a second side surface of the second oxide semiconductor film.2. The semiconductor device according to claim 1 , wherein claim 1 , in the channel width direction claim 1 , the third oxide semiconductor film is in contact with the second side surface of the second oxide semiconductor film.3. The semiconductor device according to claim 1 , wherein ...

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Номер записи: 74
25-01-2018 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20180026140A1
Автор: Asami Yoshinobu, KURATA Motomu, Okazaki Yutaka, Sasagawa Shinya, Suzawa Hideomi, TOCHIBAYASHI Katsuaki, Yamazaki Shunpei, Yoshizumi Kensuke
Принадлежит:

A miniaturized transistor, a transistor with low parasitic capacitance, a transistor with high frequency characteristics, or a semiconductor device including the transistor is provided. The semiconductor device includes a first insulator, an oxide semiconductor over the first insulator, a first conductor and a second conductor that are in contact with the oxide semiconductor, a second insulator that is over the first and second conductors and has an opening reaching the oxide semiconductor, a third insulator over the oxide semiconductor and the second insulator, and a fourth conductor over the third insulator. The first conductor includes a first region and a second region. The second conductor includes a third region and a fourth region. The second region faces the third region with the first conductor and the first insulator interposed therebetween. The second region is thinner than the first region. The third region is thinner than the fourth region. 1. A semiconductor device comprising:an oxide semiconductor;a first conductor;a second conductor;a third conductor;a first insulator; anda second insulator, a first region;', 'a second region; and', 'a third region,', 'wherein the first region overlaps with the oxide semiconductor with the first insulator interposed between the first region and the oxide semiconductor,', 'wherein the second region overlaps with the second conductor with the first insulator and the second insulator interposed between the second region and the second conductor,', 'wherein the third region overlaps with the third conductor with the first insulator and the second insulator interposed between the third region and the third conductor,, 'wherein the first conductor comprises a fourth region in contact with the second conductor; and', 'a fifth region in contact with the third conductor,, 'wherein the oxide semiconductor comprises a sixth region; and', 'a seventh region,, 'wherein the second conductor comprises an eighth region; and', 'a ...

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Номер записи: 75
05-02-2015 дата публикации

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20150037932A1
Автор: HATANO Takehisa, Isobe Atsuo, Koezuka Junichi, OHNO Shinji, Saito Toshihiko, Sasagawa Shinya, Sato Yuichi, Suzawa Hideomi, Yamazaki Shunpei
Принадлежит:

A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film. 1. (canceled)2. A method for manufacturing a semiconductor device comprising steps of:forming a first insulating film;forming an oxide semiconductor film over the first insulating film;forming a second insulating film with a projection portion and a depression portion from the first insulating film and an oxide semiconductor layer on the projection portion from the oxide semiconductor film;forming a third insulating film covering and in contact with the second insulating film and the oxide semiconductor layer;forming a fourth insulating film covering the third insulating film and filling the depression portion;performing planarization on the fourth insulating film until part of the third insulating film overlapping with the oxide semiconductor layer is exposed;removing the part of the third insulating film so that a top surface of the oxide semiconductor film is exposed and a side surface of the oxide semiconductor layer is covered by the third insulating film;forming a gate insulating film over the oxide semiconductor film;forming a gate electrode over the gate insulating film;adding dopant to the oxide semiconductor layer using the gate electrode as a mask; andforming a sidewall insulating layer in contact with ...

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Номер записи: 76
12-02-2015 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20150041805A1
Автор: KURATA Motomu, Sasagawa Shinya
Принадлежит:

Provided is a miniaturized transistor having high electrical characteristics. The transistor includes a source electrode layer in contact with one side surface of the oxide semiconductor layer in the channel-length direction and a drain electrode layer in contact with the other side surface thereof. The transistor further includes a gate electrode layer in a region overlapping with a channel formation region with a gate insulating layer provided therebetween and a conductive layer having a function as part of the gate electrode layer in a region overlapping with the source electrode layer or the drain electrode layer with the gate insulating layer provided therebetween and in contact with a side surface of the gate electrode layer. With such a structure, an Lov region is formed with a scaled-down channel length maintained. 1. A semiconductor device comprising:a source electrode layer and a drain electrode layer;an oxide semiconductor layer comprising a first impurity region, a second impurity region, and a channel formation region sandwiched between the first impurity region and the second impurity region, wherein a side surface of the first impurity region is in contact with the source electrode layer in a channel-length direction and a side surface of the second impurity region is in contact with the drain electrode layer in the channel-length direction;a gate insulating layer over and in contact with the oxide semiconductor layer, the source electrode layer, and the drain electrode layer;a gate electrode layer over the gate insulating layer, wherein the gate electrode layer overlaps with the channel formation region;a conductive layer having a first portion in contact with a side surface of the gate electrode layer and a second portion in contact with an upper surface of the gate insulating layer, wherein at least part of the second portion overlaps with one of the source electrode layer and the drain electrode layer; anda sidewall insulating layer in contact ...

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Номер записи: 77
08-05-2014 дата публикации

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Номер: US20140127868A1
Автор: Hanaoka Kazuya, ISHIZUKA Akihiro, Isobe Atsuo, Koezuka Junichi, KURATA Motomu, Saito Toshihiko, Sasagawa Shinya
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A miniaturized transistor is provided with high yield. Further, a semiconductor device which has high on-state characteristics and which is capable of high-speed response and high-speed operation is provided. In the semiconductor device, an oxide semiconductor layer, a gate insulating layer, a gate electrode layer, an insulating layer, a conductive film, and an interlayer insulating layer are stacked in this order. A source electrode layer and a drain electrode layer are formed in a self-aligned manner by cutting the conductive film so that the conductive film over the gate electrode layer and the conductive layer is removed and the conductive film is divided. An electrode layer which is in contact with the oxide semiconductor layer and overlaps with a region in contact with the source electrode layer and the drain electrode layer is provided. 1. A method for manufacturing a semiconductor device comprising the steps of:forming a first electrode layer and a second electrode layer;forming an oxide semiconductor layer over the first electrode layer and the second electrode layer;forming a gate insulating layer over the oxide semiconductor layer;forming a gate electrode layer and a first insulating layer over the gate insulating layer to overlap with the oxide semiconductor layer;introducing an impurity element into the oxide semiconductor layer using the gate electrode layer and the first insulating layer as masks so that a first region, a second region and a channel formation region between the first region and the second region are formed;forming sidewall insulating layers over the gate insulating layer to cover side surfaces of the gate electrode layer;forming a conductive film over the oxide semiconductor layer, the gate electrode layer, the sidewall insulating layers, and the first insulating layer;forming a first insulating film over the conductive film;forming a source electrode layer, a drain electrode layer, and a second insulating layer by removing parts of ...

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Номер записи: 78
26-02-2015 дата публикации

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Номер: US20150056750A1
Автор: FUJIKI Hiroshi, IEDA Yoshinori, Sasagawa Shinya
Принадлежит:

A first insulating film in contact with an oxide semiconductor film and a second insulating film are stacked in this order over an electrode film of a transistor including the oxide semiconductor film, an etching mask is formed over the second insulating film, an opening portion exposing the electrode film is formed by etching a portion of the first insulating film and a portion of the second insulating film, the opening portion exposing the electrode film is exposed to argon plasma, the etching mask is removed, and a conductive film is formed in the opening portion exposing the electrode film. The first insulating film is an insulating film whose oxygen is partly released by heating. The second insulating film is less easily etched than the first insulating film and has a lower gas-permeability than the first insulating film. 1. A manufacturing method of a semiconductor device , comprising:forming a semiconductor film that comprises a channel formation region comprising an oxide semiconductor, and an electrode film adjacent to the semiconductor film;forming a first insulating film in contact with the semiconductor film and over the electrode film, and a second insulating film over the first insulating film;forming an etching mask including a first opening portion over the second insulating film;forming a second opening portion exposing the electrode film by etching a first portion of the first insulating film and a second portion of the second insulating film, wherein the first portion and the second portion overlap with the first opening portion;exposing the second opening portion to argon plasma;removing the etching mask; andforming a conductive film in the second opening portion,wherein the first insulating film is an insulating film whose oxygen is partly released by heating, andwherein the second insulating film is less easily etched than the first insulating film and has a higher gas barrier property than the first insulating film.2. The manufacturing method ...

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Номер записи: 79
05-03-2015 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20150060848A1
Автор: KURATA Motomu, Sasagawa Shinya, TOCHIBAYASHI Katsuaki
Принадлежит:

To provide a highly reliable semiconductor device using an oxide semiconductor. The semiconductor device includes a first electrode layer; a second electrode layer positioned over the first electrode layer and including a stacked-layer structure of a first conductive layer and a second conductive layer; and an oxide semiconductor film and an insulating film positioned between the first electrode layer and the second electrode layer in a thickness direction. The first conductive layer and the insulating film have a first opening portion in a region overlapping with the first electrode layer. The oxide semiconductor film has a second opening portion in a region overlapping with the first opening portion. The second conductive layer is in contact with the first electrode layer exposed in the first opening portion and the second opening portion. 1. A semiconductor device comprising:a first electrode layer;a second electrode layer over the first electrode layer, the second electrode layer comprising a stacked-layer structure of a first conductive layer and a second conductive layer;an oxide semiconductor film between the first electrode layer and the second electrode layer in a thickness direction; andan insulating film between the oxide semiconductor film and the second electrode layer in the thickness direction,wherein the first conductive layer and the insulating film comprise a first opening portion in a region overlapping with the first electrode layer,wherein the oxide semiconductor film comprises a second opening portion in a region overlapping with the first opening portion, andwherein the second conductive layer is in contact with the first electrode layer exposed in the first opening portion and the second opening portion.2. The semiconductor device according to claim 1 , wherein the oxide semiconductor film comprises indium.3. An electronic device comprising the semiconductor device according to .4. A semiconductor device comprising: an oxide semiconductor ...

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Номер записи: 80
10-03-2022 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20220077317A1
Автор: MURAKAWA Tsutomu, Sasagawa Shinya, TAKAHASHI Erika, TOCHIBAYASHI Katsuaki, Yamazaki Shunpei
Принадлежит:

A semiconductor device in which a variation of transistor characteristics is small is provided. The semiconductor device includes a transistor. The transistor includes a first insulator, a first oxide over the first insulator, a first conductor, a second conductor, and a second oxide, which is positioned between the first conductor and the second conductor, over the first oxide, a second insulator over the second oxide, and a third conductor over the second insulator. A top surface of the first oxide in a region overlapping with the third conductor is at a lower position than a position of a top surface of the first oxide in a region overlapping with the first conductor. The first oxide in the region overlapping with the third conductor has a curved surface between a side surface and the top surface of the first oxide, and the curvature radius of the curved surface is greater than or equal to 1 nm and less than or equal to 15 nm. 1. A semiconductor device comprising a transistor ,{'claim-text': ['a first insulator;', 'a first oxide over the first insulator;', 'a first conductor, a second conductor, and a second oxide over the first oxide, the second oxide being between the first conductor and the second conductor;', 'a second insulator over the second oxide; and', 'a third conductor over the second insulator,'], '#text': 'wherein the transistor comprises:'}wherein a top surface of the first oxide in a region overlapping with the third conductor is at a lower position than a position of a top surface of the first oxide in a region overlapping with the first conductor,wherein the first oxide in the region overlapping with the third conductor comprises a curved surface between a side surface and the top surface of the first oxide, andwherein a curvature radius of the curved surface is greater than or equal to 1 nm and less than or equal to 15 nm.2. The semiconductor device according to claim 1 ,wherein a difference between a level of the top surface of the first oxide ...

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Номер записи: 81
10-03-2022 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20220077322A1
Автор: MURAKAWA Tsutomu, Sasagawa Shinya, TAKAHASHI Erika, TOCHIBAYASHI Katsuaki, Yamazaki Shunpei
Принадлежит:

A semiconductor device with small fluctuations in transistor characteristics can be provided. The semiconductor device includes a first oxide, a second oxide and a third oxide over the first oxide, a first conductor over the second oxide, a second conductor over the third oxide, a fourth oxide over the first oxide and between the second oxide and the third oxide, a first insulator over the fourth oxide, and a third conductor over the first insulator. The first oxide includes a groove in a region not overlapping with the second oxide and the third oxide. The first oxide includes a first layered crystal substantially parallel to the surface where the first oxide is formed. In the groove, the fourth oxide includes a second layered crystal substantially parallel to the surface where the first oxide is formed. A concentration of aluminum atoms at an interface between the first oxide and the fourth oxide and in the vicinity of the interface is less than or equal to 5.0 atomic %. 1. A semiconductor device comprising:a first oxide;a second oxide and a third oxide over the first oxide;a first conductor over the second oxide;a second conductor over the third oxide;a fourth oxide over the first oxide and between the second oxide and the third oxide;a first insulator over the fourth oxide; anda third conductor over the first insulator,wherein the first oxide comprises a groove in a region not overlapping with the second oxide and the third oxide,wherein the first oxide comprises a first layered crystal parallel or substantially parallel to a surface where the first oxide is formed,wherein in the groove, the fourth oxide comprises a second layered crystal parallel or substantially parallel to the surface where the first oxide is formed, andwherein at least one of a concentration of aluminum atoms at an interface between the first oxide and the fourth oxide and a concentration of aluminum atoms in a vicinity of the interface is less than or equal to 5.0 atomic %.2. A ...

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Номер записи: 82
27-02-2020 дата публикации

Semiconductor device and method for fabricating the same

Номер: US20200066884A1
Автор: Hideomi Suzawa, Masashi TSUBUKU, Motomu Kurata, Shinya Sasagawa, Shunpei Yamazaki
Принадлежит: Semiconductor Energy Laboratory Co Ltd

The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer.

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Номер записи: 83
11-03-2021 дата публикации

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20210074834A1
Автор: OKAMOTO Satoru, Sasagawa Shinya
Принадлежит:

A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A semiconductor device including the transistor is provided. A semiconductor device includes an oxide semiconductor, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. The first conductor overlaps with the oxide semiconductor with the first insulator positioned therebetween. The second insulator has an opening and a side surface of the second insulator overlaps with a side surface of the first conductor in the opening with the first insulator positioned therebetween. Part of a surface of the second conductor and part of a surface of the third conductor are in contact with the first insulator in the opening. The oxide semiconductor overlaps with the second conductor and the third conductor. 1. A semiconductor device comprising:an oxide semiconductor;a first insulator having an opening over the oxide semiconductor;a second insulator in contact with the oxide semiconductor at a bottom surface of the opening;a first conductor overlapping with the oxide semiconductor in the opening with the second insulator provided therebetween; anda second conductor and a third conductor in contact with the second insulator in the opening,wherein the first insulator, the second insulator, and the first conductor each have a chemically-mechanically polished surface.2. A semiconductor device comprising:an oxide semiconductor;a first insulator having an opening over the oxide semiconductor;a second insulator in contact with the oxide semiconductor at a bottom surface of the opening;a first conductor overlapping with the oxide semiconductor in the opening with the second insulator provided therebetween; anda second conductor and a third conductor in contact with the second insulator in the opening,wherein the first insulator, the second insulator, and the first conductor each have a ...

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Номер записи: 84
19-03-2015 дата публикации

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20150079730A1
Автор: MURAOKA Taiga, Sasagawa Shinya, Suzawa Hideomi
Принадлежит:

An object is to establish a processing technique in manufacture of a semiconductor device in which an oxide semiconductor is used. A gate electrode is formed over a substrate, a gate insulating layer is formed over the gate electrode, an oxide semiconductor layer is formed over the gate insulating layer, the oxide semiconductor layer is processed by wet etching to form an island-shaped oxide semiconductor layer, a conductive layer is formed to cover the island-shaped oxide semiconductor layer, the conductive layer is processed by dry etching to form a source electrode, and a drain electrode and part of the island-shaped oxide semiconductor layer is removed by dry etching to form a recessed portion in the island-shaped oxide semiconductor layer. 1. (canceled)2. A method for manufacturing a semiconductor device comprising:forming a semiconductor layer that comprises an oxide semiconductor including indium;processing the semiconductor layer by wet etching to form an island-shaped semiconductor layer;processing the island-shaped semiconductor layer by dry etching to form a recessed portion in the island-shaped semiconductor layer; andperforming oxygen radical treatment on the recessed portion.3. The method for manufacturing a semiconductor device according to claim 2 , wherein the island-shaped semiconductor layer is an In—Ga—Zn—O based non-single-crystal film.4. The method for manufacturing a semiconductor device according to claim 2 , wherein an oxygen content in a gas used in the dry etching is 15 volume % or more.5. The method for manufacturing a semiconductor device according to claim 2 , wherein the oxygen radical treatment is performed under an atmosphere comprising chlorine and fluorine.6. The method for manufacturing a semiconductor device according to claim 2 , further comprising:after forming the recessed portion, performing heat treatment on the island-shaped semiconductor layer at 200° C. to 600° C.7. The method for manufacturing a semiconductor device ...

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Номер записи: 85
15-03-2018 дата публикации

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE

Номер: US20180076195A1
Автор: Miyairi Hidekazu, Sasagawa Shinya, Yamazaki Shunpei
Принадлежит:

Provided is a semiconductor device that occupies a small area, a highly integrated semiconductor device, or a semiconductor device with high productivity. To fabricate an integrated circuit, a first insulating film is formed over a p-channel transistor; a transistor including an oxide semiconductor is formed over the first insulating film; a second insulating film is formed over the transistor; an opening, that is, a contact hole part of a sidewall of which is formed of the oxide semiconductor of the transistor, is formed in the first insulating film and the second insulating film; and an electrode connecting the p-channel transistor and the transistor including an oxide semiconductor to each other is formed. 1. A semiconductor device comprising:a first transistor;a second transistor over the first transistor, the second transistor comprising a semiconductor film comprising a first opening portion;an insulating film over the second transistor, the insulating film comprises a second opening portion that overlaps with the second transistor; anda conductive film in the first opening portion and the second opening portion, the conductive film electrically connected to the first transistor, andwherein a side surface of the conductive film comprises a plurality of projections.2. A semiconductor device comprising:a first insulating film comprising a first opening portion;a second insulating film over the first insulating film, the second insulating film comprising a second opening portion;a third insulating film over the second insulating film, the third insulating film comprising a third opening portion;a transistor over the third insulating film, the transistor comprising a semiconductor film comprising a fourth opening portion;a first conductive film in the first opening portion, the second opening portion, the third opening portion, and the fourth opening portionwherein the first conductive film comprises a first width in the first opening portion, a second width in ...

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Номер записи: 86
15-03-2018 дата публикации

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, MODULE, AND ELECTRONIC DEVICE

Номер: US20180076332A1
Автор: ENDO Yuta, KURATA Motomu, OKAMOTO Satoru, Sasagawa Shinya, Yamazaki Shunpei
Принадлежит:

A semiconductor device which includes a transistor having a miniaturized structure is provided. A first insulator is provided over a stack in which a semiconductor, a first conductor, and a second conductor are stacked in this order. Over the first insulator, an etching mask is formed. Using the etching mask, the first insulator and the second conductor are etched until the first conductor is exposed. After etching the first conductor until the semiconductor is exposed so as to form a groove having a smaller width than the second conductor, a second insulator and a third conductor are formed sequentially. 1. A semiconductor device comprising:a first conductor;a second conductor;a third conductor;a fourth conductor;a fifth conductor;a first insulator;a second insulator;a third insulator;a fourth insulator;a fifth insulator;a semiconductor; andan opening,wherein the second insulator is over the first insulator,wherein the semiconductor is over the second insulator,wherein the first conductor and the second conductor are over the semiconductor,wherein the third conductor is over the first conductor,wherein the fourth conductor is over the second conductor,wherein the third insulator is over the first insulator, the semiconductor, the first conductor, the second conductor, the third conductor, and the fourth conductor,wherein the opening exposes part of the first insulator, part of the semiconductor, part of the first conductor, part of the second conductor, part of the third conductor, and part of the fourth conductor,wherein the fourth insulator is along a side surface and a bottom surface of the opening,wherein the fifth insulator is over the fourth insulator,wherein the fifth conductor comprises a region overlapping with the semiconductor with the fourth insulator and the fifth insulator therebetween, the region being included in the opening,wherein the first conductor has a shape such that an end portion of the first conductor inwardly extends beyond an end portion ...

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Номер записи: 87
26-03-2015 дата публикации

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20150084049A1
Автор: ISHIZUKA Akihiro, Sasagawa Shinya, YONEMITSU Yutaka
Принадлежит:

An object is to provide a method for manufacturing a semiconductor device including an oxide semiconductor and having improved electric characteristics. The semiconductor device includes an oxide semiconductor film, a gate electrode overlapping the oxide semiconductor film, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. The method includes the steps of forming a first insulating film including gallium oxide over and in contact with the oxide semiconductor film; forming a second insulating film over and in contact with the first insulating film; forming a resist mask over the second insulating film; forming a contact hole by performing dry etching on the first insulating film and the second insulating film; removing the resist mask by ashing using oxygen plasma; and forming a wiring electrically connected to at least one of the gate electrode, the source electrode, and the drain electrode through the contact hole. 1. (canceled)2. A semiconductor device comprising:an oxide semiconductor layer comprising a channel formation region over an insulating surface;a source electrode and a drain electrode connected to the oxide semiconductor layer;a first layer over and in contact with the source electrode, the drain electrode, and the channel formation region;a second layer over the first layer; anda wiring over the second layer;wherein the first layer comprises gallium and oxygen,wherein the wiring is connected to the source electrode or the drain electrode through a contact hole in the first layer and the second layer, andwherein a diameter of the contact hole in the first layer is smaller than a diameter of the contact hole in the second layer.3. The semiconductor device according to claim 2 , wherein the first layer comprises aluminum oxide.4. The semiconductor device according to claim 2 , wherein the first layer is an insulating layer comprising gallium oxide.5. The semiconductor device according to claim 2 , wherein ...

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Номер записи: 88
24-03-2016 дата публикации

Method for manufacturing semiconductor device

Номер: US20160087105A1
Автор: Akihisa Shimomura, Katsuaki TOCHIBAYASHI, Shinya Sasagawa, Shunpei Yamazaki, Yuta Endo
Принадлежит: Semiconductor Energy Laboratory Co Ltd

A method for manufacturing a semiconductor device, including the steps of forming a semiconductor over a substrate; forming a first conductor over the semiconductor; forming a first insulator over the first conductor; forming a resist over the first insulator; performing light exposure and development on the resist to make a second region and a third region remain and expose part of the first insulator; applying a bias in a direction perpendicular to a top surface of the substrate and generating plasma using a gas containing carbon and halogen; and depositing and etching an organic substance with the plasma. The etching rate of the organic substance is higher than the deposition rate of the organic substance in an exposed part of the first insulator, and the deposition rate of the organic substance is higher than the etching rate of the organic substance in a side surface of the second region.

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Номер записи: 89
02-04-2015 дата публикации

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20150093855A1
Автор: ISHIZUKA Akihiro, Sasagawa Shinya
Принадлежит:

To provide a miniaturized semiconductor device with stable electric characteristics in which a short-channel effect is suppressed. Further, to provide a manufacturing method of the semiconductor device. The semiconductor device (transistor) including a trench formed in an oxide insulating layer, an oxide semiconductor film formed along the trench, a source electrode and a drain electrode which are in contact with the oxide semiconductor film, a gate insulating layer over the oxide semiconductor film, a gate electrode over the gate insulating layer is provided. The lower corner portions of the trench are curved, and the side portions of the trench have side surfaces substantially perpendicular to the top surface of the oxide insulating layer. Further, the width between the upper ends of the trench is greater than or equal to 1 time and less than or equal to 1.5 times the width between the side surfaces of the trench. 1. A manufacturing method of a semiconductor device comprising:forming an oxide insulating layer;forming a trench in the oxide insulating layer by performing first plasma etching treatment and second plasma etching treatment, wherein lower corner portions of the trench are curved;forming an oxide semiconductor film in contact with a bottom portion, the lower corner portions, and side portions of the trench in the oxide insulating layer;forming a source electrode and a drain electrode electrically connected to the oxide semiconductor film;forming a gate insulating layer over the oxide semiconductor film; andforming a gate electrode over the gate insulating layer,wherein the first plasma etching treatment is performed on the oxide insulating layer with application of bias voltage in order to form a depressed portion including side surfaces substantially perpendicular to a top surface of the oxide insulating layer, andwherein the second plasma etching treatment is performed on the depressed portion with application of a bias voltage lower than that of the ...

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Номер записи: 90
31-03-2016 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20160093642A1
Автор: Hanaoka Kazuya, Isobe Atsuo, KURATA Motomu, Okazaki Yutaka, Sasagawa Shinya
Принадлежит:

A first conductive film overlapping with an oxide semiconductor film is formed over a gate insulating film, a gate electrode is formed by selectively etching the first conductive film using a resist subjected to electron beam exposure, a first insulating film is formed over the gate insulating film and the gate electrode, removing a part of the first insulating film while the gate electrode is not exposed, an anti-reflective film is formed over the first insulating film, the anti-reflective film, the first insulating film and the gate insulating film are selectively etched using a resist subjected to electron beam exposure, and a source electrode in contact with one end of the oxide semiconductor film and one end of the first insulating film and a drain electrode in contact with the other end of the oxide semiconductor film and the other end of the first insulating film are formed. 1. (canceled)2. A semiconductor device comprising:a first insulating layer including aluminum and oxygen;an oxide semiconductor layer over the first insulating layer;a gate insulating layer over the oxide semiconductor layer;a gate electrode over the gate insulating layer;a second insulating layer in direct contact with a top surface of the gate electrode, a first side surface of the gate electrode and a second side surface of the gate electrode, the second insulating layer containing aluminum and oxygen;a third insulating layer over the gate electrode; anda fourth insulating layer over the second insulating layer and the third insulating layer, the fourth insulating layer containing aluminum and oxygen.3. The semiconductor device according to claim 2 , wherein the fourth insulating layer is in direct contact with the second insulating layer.4. The semiconductor device according to claim 2 , further comprising:a source electrode electrically connected to the oxide semiconductor layer; anda drain electrode electrically connected to the oxide semiconductor layer,wherein heights of top ...

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Номер записи: 91
07-04-2016 дата публикации

Wiring Layer and Manufacturing Method Therefor

Номер: US20160099259A1
Автор: MORIWAKA Tomoaki, OHTSUKI Takashi, Okazaki Yutaka, Sasagawa Shinya
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

To provide a miniaturized semiconductor device with low power consumption. A method for manufacturing a wiring layer includes the following steps: forming a second insulator over a first insulator; forming a third insulator over the second insulator; forming an opening in the third insulator so that it reaches the second insulator; forming a first conductor over the third insulator and in the opening; forming a second conductor over the first conductor; and after forming the second conductor, performing polishing treatment to remove portions of the first and second conductors above a top surface of the third insulator. An end of the first conductor is at a level lower than or equal to the top level of the opening. The top surface of the second conductor is at a level lower than or equal to that of the end of the first conductor. 1. A method for manufacturing a wiring layer , comprising:forming a second insulator over a first insulator;forming a third insulator over the second insulator;forming an opening in the third insulator so that it reaches the second insulator;forming a first conductor over the third insulator and in the opening;forming a second conductor over the first conductor; andafter forming the second conductor, performing polishing treatment to remove portions of the first and second conductors above a top surface of the third insulator,wherein an end of the first conductor is at a level lower than or equal to the top level of the opening, andwherein a top surface of the second conductor is at a level lower than or equal to that of the end of the first conductor.2. The wiring layer manufactured by the method according to claim 1 , wherein the first conductor allows less oxygen to pass therethrough than the second conductor.3. A semiconductor device comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a transistor comprising a wiring layer as a back gate of the transistor, the wiring layer being manufactured by the method according to .'}4. A ...

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Номер записи: 92
26-06-2014 дата публикации

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20140179058A1
Автор: HOSOBA Miyuki, ITO Shunichi, MURAOKA Taiga, Sasagawa Shinya, Suzawa Hideomi
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. In etching steps, a first etching step is performed by wet etching in which an etchant is used, and a second etching step is performed by dry etching in which an etching gas is used. 1. (canceled)2. A method for manufacturing a semiconductor device , comprising:forming a gate electrode layer over an insulating surface, wherein the gate electrode layer comprises a stack of a first layer comprising Ti and a second layer comprising Cu;forming a gate insulating layer over the gate electrode layer, wherein the gate insulating layer comprises a stack of a silicon nitride layer and a first silicon oxide layer, and the silicon nitride layer covers the second layer;forming an oxide semiconductor film over the gate electrode layer;forming a conductive film over the gate electrode layer;forming a first mask layer over the gate insulating layer, the oxide semiconductor film, and the conductive film;forming an oxide semiconductor layer and a conductive layer by etching the oxide semiconductor film and the conductive film with the use of the first mask layer in a first etching step;forming a second mask layer by ashing the first mask layer; andforming an oxide semiconductor layer having a depression, a source electrode layer, and a drain electrode layer by etching the oxide semiconductor layer and the conductive layer with the use of the second mask layer in a second etching step,wherein the first mask layer is ...

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Номер записи: 93
04-04-2019 дата публикации

Semiconductor device and method for fabricating the same

Номер: US20190103478A1
Автор: Hideomi Suzawa, Masashi TSUBUKU, Motomu Kurata, Shinya Sasagawa, Shunpei Yamazaki
Принадлежит: Semiconductor Energy Laboratory Co Ltd

The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer.

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Номер записи: 94
19-04-2018 дата публикации

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20180108680A1
Автор: MURAOKA Taiga, Sasagawa Shinya, Suzawa Hideomi
Принадлежит:

An object is to establish a processing technique in manufacture of a semiconductor device in which an oxide semiconductor is used. A gate electrode is formed over a substrate, a gate insulating layer is formed over the gate electrode, an oxide semiconductor layer is formed over the gate insulating layer, the oxide semiconductor layer is processed by wet etching to form an island-shaped oxide semiconductor layer, a conductive layer is formed to cover the island-shaped oxide semiconductor layer, the conductive layer is processed by dry etching to form a source electrode, and a drain electrode and part of the island-shaped oxide semiconductor layer is removed by dry etching to form a recessed portion in the island-shaped oxide semiconductor layer. 1. (canceled)2. A semiconductor device comprising: a first metal layer;', 'a first insulating layer over the first metal layer;', 'an oxide semiconductor film over the first insulating layer;', 'a second metal layer and a third metal layer over the first insulating layer, the second metal layer and the third metal layer comprising copper; and', 'a second insulating layer over the oxide semiconductor film, the second metal layer and the third metal layer,, 'a transistor comprisingwherein the first metal layer is formed by a stack of a first titanium film and a first copper film,wherein the second metal layer and the third metal layer are electrically connected to the oxide semiconductor film,wherein the oxide semiconductor film comprises a channel region of the transistor, andwherein the first metal layer comprises a gate electrode of the transistor.3. The semiconductor device according to claim 2 ,wherein each of the second metal layer and the third metal layer is formed by a stack of a second titanium film and a second copper film.4. The semiconductor device according to claim 2 ,wherein the second metal layer covers the oxide semiconductor film and is in direct contact with one of sides edge of the oxide semiconductor film. ...

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Номер записи: 95
19-04-2018 дата публикации

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20180108760A1
Автор: OKAMOTO Satoru, Sasagawa Shinya
Принадлежит:

A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A semiconductor device including the transistor is provided. A semiconductor device includes an oxide semiconductor, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. The first conductor overlaps with the oxide semiconductor with the first insulator positioned therebetween. The second insulator has an opening and a side surface of the second insulator overlaps with a side surface of the first conductor in the opening with the first insulator positioned therebetween. Part of a surface of the second conductor and part of a surface of the third conductor are in contact with the first insulator in the opening. The oxide semiconductor overlaps with the second conductor and the third conductor. 1. A semiconductor device comprising:a first conductor layer and a second conductor layer over an oxide semiconductor;a third insulator over the first conductor layer and the second conductor layer, the third insulator comprising an opening;a fourth insulator over the third insulator, the first conductor layer, the second conductor layer, and the oxide semiconductor;a fifth insulator over the fourth insulator; anda third conductor over the fifth insulator,wherein in the opening of the third insulator, a side surface of the third insulator overlaps with a side surface of the third conductor with the fourth insulator and the fifth insulator positioned therebetween, andwherein in the opening of the third insulator, part of top surfaces of the first conductor layer and the second conductor layer is in contact with the fourth insulator.2. The semiconductor device according to claim 1 , further comprising:a first insulator; anda second insulator between the first insulator and the oxide semiconductor,wherein the second insulator comprises at least one of component elements of the oxide ...

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Номер записи: 96
18-04-2019 дата публикации

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20190115478A1
Автор: KURATA Motomu, OKAMOTO Satoru, Sasagawa Shinya, Yamazaki Shunpei
Принадлежит:

A minute transistor is provided. A transistor with small parasitic capacitance is provided. A transistor with high frequency characteristics is provided. A semiconductor device including the transistor is provided. A semiconductor device includes an oxide semiconductor, a first conductor and a second insulator embedded in a first insulator, a second conductor and a third conductor. Edges of the second conductor and the third conductor facing each other each has a taper angle of 30 degree or more and 90 degree or less. 1. A method for manufacturing a semiconductor device comprising the steps of:forming a second insulator over a first insulator;forming an oxide semiconductor over the second insulator;forming a first conductor over the oxide semiconductor;etching part of the first conductor, the oxide semiconductor, and the second insulator to form a multi-layer film including the first conductor, the oxide semiconductor, and the second insulator;forming a third insulator over the first insulator and the multi-layer film;forming an opening exposing the first conductor in the third insulator;etching the first conductor to form a first conductor layer and a second conductor layer, so that part of the oxide semiconductor between the first conductor layer and the second conductor layer is exposed;forming a fourth insulator over the third insulator, the first conductor layer, the second conductor layer, and the oxide semiconductor;forming a fifth insulator over the fourth insulator;forming a third conductor over the fifth insulator; andpolishing the third conductor, the fifth insulator, and the fourth insulator to expose the third insulator,wherein in a cross section perpendicular to bottom surfaces of the first and second conductor layers in a channel width direction, an angle formed between a side surface of the third insulator in the opening and the bottom surface of the first conductor layer is greater than an angle formed between a side surface of the first conductor ...

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Номер записи: 97
05-05-2016 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20160126360A1
Автор: KURATA Motomu, Sasagawa Shinya
Принадлежит:

A miniaturized transistor having excellent electrical characteristics is provided with high yield. Further, a semiconductor device including the transistor and having high performance and high reliability is manufactured with high productivity. In a semiconductor device including a transistor in which an oxide semiconductor film including a channel formation region and low-resistance regions between which the channel formation region is sandwiched, a gate insulating film, and a gate electrode layer whose top surface and side surface are covered with an insulating film including an aluminum oxide film are stacked, a source electrode layer and a drain electrode layer are in contact with part of the oxide semiconductor film and the top surface and a side surface of the insulating film including an aluminum oxide film. 1. A method for manufacturing a semiconductor device , comprising the steps of:forming an oxide insulating film;forming an oxide semiconductor film over the oxide insulating film;forming a gate insulating film over the oxide semiconductor film;forming a gate electrode layer overlapping with the oxide semiconductor film, over the gate insulating film;forming an insulating film including an aluminum oxide film to cover a top surface and a side surface of the gate electrode layer; andforming a wiring layer in contact with the oxide semiconductor film and a part of a top surface and a side surface of the insulating film including the aluminum oxide film.2. A method for manufacturing a semiconductor device , comprising the steps of:forming an oxide insulating film;forming an oxide semiconductor film over the oxide insulating film;forming a gate insulating film over the oxide semiconductor film;forming a gate electrode layer overlapping with the oxide semiconductor film, over the gate insulating film;forming an insulating film including an aluminum oxide film to cover a top surface and a side surface of the gate electrode layer;forming an interlayer insulating ...

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Номер записи: 98
25-08-2022 дата публикации

Semiconductor Device and Method For Manufacturing Semiconductor Device

Номер: US20220271167A1
Автор: OKUNO Naoki, Sasagawa Shinya, TAKAHASHI Erika, Takahashi Masahiro, TANEMARA Kazuki, Yamazaki Shunpei
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A semiconductor device with high reliability is provided. The semiconductor device includes a first oxide; a first conductor, a second conductor, and a first insulator over the first oxide; and a third conductor over the first insulator. The first conductor includes a first crystal. The second conductor includes a crystal having the same crystal structure as the first crystal. The first crystal has (111) orientation with respect to a surface of the first oxide. The first oxide includes a second crystal. The second crystal has c-axis alignment with respect to a surface where the first oxide is formed. The lattice mismatch degree of the first crystal with respect to the second crystal is lower than or equal to 8 percent. 1. A semiconductor device comprising:a first oxide;a first conductor, a second conductor, and a first insulator over the first oxide; anda third conductor over the first insulator,wherein the first conductor comprises a first crystal,wherein the second conductor comprises a crystal having the same crystal structure as the first crystal,wherein the first crystal has (111) orientation with respect to a surface of the first oxide, wherein the first oxide comprises a second crystal,wherein the second crystal has c-axis alignment with respect to a surface where the first oxide is formed, andwherein a lattice mismatch degree of the first crystal with respect to the second crystal is lower than or equal to 8%.2. A semiconductor device comprising:a first oxide;a second oxide and a third oxide over the first oxide;a first conductor over the second oxide;a second conductor over the third oxide;a first insulator positioned between the first conductor and the second conductor and positioned over the first oxide; anda third conductor over the first insulator,wherein the first conductor comprises a first crystal,wherein the second conductor comprises a crystal having the same crystal structure as the first crystal,wherein the first crystal has (111) orientation ...

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Номер записи: 99
25-08-2022 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20220271168A1
Автор: Hirose Takashi, HODO Ryota, KOMATSU Yoshihiro, Sasagawa Shinya, SUGAYA Kentaro, TOCHIBAYASHI Katsuaki, Yamazaki Shunpei
Принадлежит:

A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes an oxide semiconductor, a first conductor and a second conductor over the oxide semiconductor, a first insulator in contact with a top surface of the first conductor, a second insulator in contact with a top surface of the second conductor, a third insulator which is positioned over the first insulator and the second insulator and has an opening overlapping with a region between the first conductor and the second conductor, a fourth insulator positioned over the oxide semiconductor and in the region between the first conductor and the second conductor, and a third conductor over the fourth insulator. Each of the first insulator and the second insulator is a metal oxide including an amorphous structure. 1. A semiconductor device comprising:an oxide semiconductor;a first conductor and a second conductor over the oxide semiconductor;a first insulator in contact with a top surface of the first conductor;a second insulator in contact with a top surface of the second conductor;a third insulator which is positioned over the first insulator and the second insulator and has an opening overlapping with a region between the first conductor and the second conductor;a fourth insulator positioned over the oxide semiconductor and in the region between the first conductor and the second conductor; anda third conductor over the fourth insulator,wherein each of the first insulator and the second insulator is a metal oxide including an amorphous structure.2. A semiconductor device comprising:an oxide semiconductor;a first conductor and a second conductor over the oxide semiconductor;a first insulator which covers the first conductor and the second conductor and has an opening overlapping with a region between the first conductor and the second conductor;a second insulator which is positioned over the first insulator and has an opening overlapping with the region ...

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Номер записи: 100
21-05-2015 дата публикации

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20150137124A1
Автор: EGI Yuji, Sasagawa Shinya, Suzawa Hideomi
Принадлежит:

In a semiconductor device including a transistor in which an oxide semiconductor layer, a gate insulating layer, and a gate electrode layer on side surfaces of which sidewall insulating layers are provided are stacked in this order, a source electrode layer and a drain electrode layer are provided in contact with the oxide semiconductor layer and the sidewall insulating layers. In a process for manufacturing the semiconductor device, a conductive layer and an interlayer insulating layer are stacked to cover the oxide semiconductor layer, the sidewall insulating layers, and the gate electrode layer. Then, parts of the interlayer insulating layer and the conductive layer over the gate electrode layer are removed by a chemical mechanical polishing method, so that a source electrode layer and a drain electrode layer are formed. Before formation of the gate insulating layer, cleaning treatment is performed on the oxide semiconductor layer. 1. (canceled)2. A semiconductor device comprising:an island-shaped oxide semiconductor layer over an oxide insulating layer including an insulating surface;a source electrode layer and a drain electrode layer over the island-shaped oxide semiconductor layer;a gate insulating layer over the island-shaped oxide semiconductor layer;a gate electrode layer over the gate insulating layer;an insulating layer over the gate electrode layer, the insulating layer overlapping the gate electrode layer;a sidewall insulating layer over the gate insulating layer, the sidewall insulating layer covering a side surface of the gate electrode layer and a side surface of the insulating layer;a conductive layer over the island-shaped oxide semiconductor layer, the gate insulating layer, the gate electrode layer, the insulating layer, and the sidewall insulating layer; andan interlayer insulating layer over the source electrode layer and the drain electrode layer,wherein a source region of the island-shaped oxide semiconductor layer includes a dopant,wherein ...

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Номер записи: 101
17-05-2018 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE

Номер: US20180138213A1
Автор: HODO Ryota, KURATA Motomu, OKAMOTO Satoru, Sasagawa Shinya, Yamazaki Shunpei
Принадлежит:

First to third insulators are successively formed in this order over a first conductor over a semiconductor substrate; a hard mask with a first opening is formed thereover; a resist mask with a second opening is formed thereover; a third opening is formed in the third insulator; a fourth opening is formed in the second insulator; the resist mask is removed; a fifth opening is formed in the first to third insulators; a second conductor is formed to cover an inner wall and a bottom surface of the fifth opening; a third conductor is formed thereover; polishing treatment is performed so that the hard mask is removed, and that levels of top surfaces of the second and third conductors and the third insulator are substantially equal to each other; and an oxide semiconductor is formed thereover. The second insulator is less permeable to hydrogen than the first and third insulators, the second conductor is less permeable to hydrogen than the third conductor. 1. A method for manufacturing a semiconductor device , comprising the steps of:forming a first conductor over a semiconductor substrate;forming a first insulator over the first conductor;forming a second insulator over the first insulator;forming a third insulator over the second insulator;forming a hard mask with a first opening over the third insulator;forming a resist mask with a second opening over the hard mask;etching the third insulator using the resist mask to form a third opening in the third insulator;etching the second insulator using the resist mask to form a fourth opening in the second insulator;removing the resist mask;etching the first to third insulators using the hard mask to form a fifth opening in the first to third insulators;forming a second conductor to cover an inner wall and a bottom surface of the fifth opening;forming a third conductor over the second conductor to fill the fifth opening;performing polishing treatment on the hard mask, the second conductor, and the third conductor so that the ...

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Номер записи: 102
10-06-2021 дата публикации

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Номер: US20210175334A1
Автор: Arasawa Ryo, Sasagawa Shinya, TAKAHASHI Erika, TOCHIBAYASHI Katsuaki, Yamazaki Shunpei
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A semiconductor device in which variations in characteristics, deterioration of elements, and abnormality in shape are inhibited is provided. The semiconductor device includes a first region including a plurality of elements and a second region including a plurality of dummy elements. The second region is provided in an outer edge of the first region, and the element and the dummy element each include an oxide semiconductor. The element and the dummy element have the same structure, and a structure body included in the element and a structure body included in the dummy element are formed with the same material and provided in the same layer. The oxide semiconductor includes In, an element M (M is Al, Ga, Y, or Sn), and Zn. 1. A semiconductor device comprising:a first region comprising a plurality of elements; anda second region comprising a plurality of dummy elements,wherein the second region is provided in an outer edge of the first region, andwherein the plurality of elements and the plurality of dummy elements each comprise an oxide semiconductor.2. A semiconductor device comprising:a first region comprising a plurality of elements;a second region comprising a plurality of dummy elements; anda third region comprising a plurality of elements and a plurality of dummy elements,wherein the second region is provided in an outer edge of the first region and an outer edge of the third region, andwherein the plurality of elements of the first region, the plurality of dummy elements of the second region, and the plurality of elements and the plurality of dummy elements of the third region, each comprise an oxide semiconductor.3. The semiconductor device according to claim 1 ,wherein an element of the plurality of elements and a dummy element of the plurality of dummy elements have the same structure, andwherein a structure body included in the element and a structure body included in the dummy element are formed with the same material and provided in the same layer.4. ...

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Номер записи: 103
31-05-2018 дата публикации

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20180151742A1
Автор: KURATA Motomu, OKAMOTO Satoru, Sasagawa Shinya, Shimomura Akihisa, TOCHIBAYASHI Katsuaki
Принадлежит:

A minute transistor is provided. Alternatively, a transistor with low parasitic capacitance is provided. Alternatively, a transistor having high frequency characteristics is provided. Alternatively, a novel transistor is provided. 1. A method for manufacturing a semiconductor device , comprising the steps of:forming a second insulator over a first insulator;forming a semiconductor over the second insulator;forming a first conductor over the semiconductor;etching part of the first conductor, part of the semiconductor, and part of the second insulator, thereby forming a multilayer film comprising the first conductor, the semiconductor, and the second insulator;forming a third insulator over the first insulator and the multilayer film;forming a second conductor over the third insulator;forming a fourth insulator over the second conductor;forming a resist mask over the fourth insulator by a lithography method;etching part of the fourth insulator using the resist mask, thereby forming a first insulating layer;etching part of the second conductor using the resist mask and the first insulating layer as a first mask, thereby forming a first conductive layer and removing the resist mask;etching the third insulator using the first insulating layer and the first conductive layer as a second mask, thereby forming an opening portion in the third insulator and removing the first insulating layer;etching the first conductor until the semiconductor is exposed using the first conductive layer as a third mask, thereby dividing the first conductor into a second conductive layer and a third conductive layer and removing the first conductive layer;forming a fifth insulator over the third insulator and the semiconductor;forming a sixth insulator over the fifth insulator;forming a third conductor over the sixth insulator; andperforming chemical mechanical polishing on the third conductor, the sixth insulator, and the fifth insulator, thereby exposing the third insulator,wherein the first ...

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Номер записи: 104
09-06-2016 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20160163744A1
Автор: Sasagawa Shinya, Suzawa Hideomi, TANAKA Tetsuhiro, Yamazaki Shunpei
Принадлежит:

A semiconductor device in which an increase in oxygen vacancies in an oxide semiconductor layer can be suppressed is provided. A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device includes an oxide semiconductor layer in a channel formation region, and by the use of an oxide insulating film below and in contact with the oxide semiconductor layer and a gate insulating film over and in contact with the oxide semiconductor layer, oxygen of the oxide insulating film or the gate insulating film is supplied to the oxide semiconductor layer. Further, a conductive nitride is used for metal films of a source electrode layer, a drain electrode layer, and a gate electrode layer, whereby diffusion of oxygen to the metal films is suppressed. 1an oxide insulating film;an oxide semiconductor layer over the oxide insulating film;a first source electrode layer in contact with the oxide semiconductor layer;a first drain electrode layer in contact with the oxide semiconductor layer;a second source electrode layer in contact with the oxide semiconductor layer, the second source electrode layer covering the first source electrode layer;a second drain electrode layer in contact with the oxide semiconductor layer, the second drain electrode layer covering the first drain electrode layer;a gate insulating film over the oxide semiconductor layer, the second source electrode layer, and the second drain electrode layer;a first gate electrode layer over the gate insulating film;a second gate electrode layer over the first gate electrode layer; anda protective insulating film over the second gate electrode layer,wherein the gate insulating film is in contact with the oxide insulating film, andwherein each of the second source electrode layer, the second drain electrode layer, and the first gate electrode layer comprises nitrogen.. A semiconductor device comprising: The present invention relates ...

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Номер записи: 105
18-06-2015 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20150171195A1
Автор: ISHIZUKA Akihiro, Isobe Atsuo, Sasagawa Shinya, Sasaki Toshinari
Принадлежит:

A semiconductor device having a transistor including an oxide semiconductor film is disclosed. In the semiconductor device, the oxide semiconductor film is provided along a trench formed in an insulating layer. The trench includes a lower end corner portion and an upper end corner portion having a curved shape with a curvature radius of longer than or equal to 20 nm and shorter than or equal to 60 nm, and the oxide semiconductor film is provided in contact with a bottom surface, the lower end corner portion, the upper end corner portion, and an inner wall surface of the trench. The oxide semiconductor film includes a crystal having a c-axis substantially perpendicular to a surface at least over the upper end corner portion. 1. (canceled)2. A method for manufacturing a semiconductor device comprising the steps of:forming an oxide semiconductor film over and in contact with a curved surface,wherein the oxide semiconductor film comprises a crystalline region,wherein the crystalline region comprises a plurality of layers of metal atoms, andwherein each of the layers is formed along the curved surface.3. The method for manufacturing a semiconductor device according to claim 2 , further comprising the steps of:removing hydrogen in the oxide semiconductor film by a heat treatment in a nitrogen atmosphere or a rare gas atmosphere, andsupplying oxygen to the oxide semiconductor film after the heat treatment.4. The method for manufacturing a semiconductor device according to claim 2 ,wherein the curved surface has a curvature radius of longer than or equal to 20 nm and shorter than or equal to 60 nm.5. The method for manufacturing a semiconductor device according to claim 2 ,wherein c-axes of crystals in the crystalline region are aligned substantially perpendicular to the curved surface.6. The method for manufacturing a semiconductor device according to claim 2 ,wherein the curved surface is curved upward.7. The method for manufacturing a semiconductor device according to ...

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Номер записи: 106
18-06-2015 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20150171222A1
Автор: Hanaoka Kazuya, KOBAYASHI Yoshiyuki, KURATA Motomu, Matsubayashi Daisuke, Sasagawa Shinya
Принадлежит:

A semiconductor device with favorable electrical characteristics is provided. The semiconductor device includes an insulating layer, a semiconductor layer over the insulating layer, a source electrode layer and a drain electrode layer electrically connected to the semiconductor layer, a gate insulating film over the semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode layer overlapping with part of the semiconductor layer, part of the source electrode layer, and part of the drain electrode layer with the gate insulating film therebetween. A cross section of the semiconductor layer in the channel width direction is substantially triangular or substantially trapezoidal. The effective channel width is shorter than that for a rectangular cross section. 1. A semiconductor device comprising:an insulating layer;a semiconductor layer over the insulating layer;a source electrode layer and a drain electrode layer electrically connected to the semiconductor layer;a gate insulating film overlapping with the semiconductor layer; anda gate electrode layer overlapping with the semiconductor layer with the gate insulating film therebetween, {'br': None, 'i': X/', 'Y', 'Z Подробнее

Номер записи: 107
11-09-2014 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20140252351A1
Автор: Hanaoka Kazuya, Isobe Atsuo, KURATA Motomu, Okazaki Yutaka, Sasagawa Shinya
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A first conductive film overlapping with an oxide semiconductor film is formed over a gate insulating film, a gate electrode is formed by selectively etching the first conductive film using a resist subjected to electron beam exposure, a first insulating film is formed over the gate insulating film and the gate electrode, removing a part of the first insulating film while the gate electrode is not exposed, an anti-reflective film is formed over the first insulating film, the anti-reflective film, the first insulating film and the gate insulating film are selectively etched using a resist subjected to electron beam exposure, and a source electrode in contact with one end of the oxide semiconductor film and one end of the first insulating film and a drain electrode in contact with the other end of the oxide semiconductor film and the other end of the first insulating film are formed.

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Номер записи: 108
25-06-2015 дата публикации

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

Номер: US20150179775A1
Автор: KURATA Motomu, Sasagawa Shinya
Принадлежит:

An object is to provide a semiconductor device in which defects are reduced and miniaturization is achieved while favorable characteristics are maintained. A semiconductor layer is formed; a first conductive layer is formed over the semiconductor layer; the first conductive layer is etched with use of a first resist mask to form a second conductive layer having a recessed portion; the first resist mask is reduced in size to form a second resist mask; the second conductive layer is etched with use of the second resist mask to form source and drain electrodes each having a projecting portion with a tapered shape at the peripheries; a gate insulating layer is formed over the source and drain electrodes to be in contact with part of the semiconductor layer; and a gate electrode is formed in a portion over the gate insulating layer and overlapping with the semiconductor layer. 1. A method for manufacturing a semiconductor device comprising the steps of:forming a semiconductor layer;forming a first conductive layer of a single layer over the semiconductor layer;forming a first resist mask with use of light with a wavelength less than or equal to 365 nm over the first conductive layer;etching the first conductive layer with use of the first resist mask to form a second conductive layer having a recessed portion;reducing the first resist mask in size to form a second resist mask;etching the second conductive layer with use of the second resist mask to form a source electrode and a drain electrode each having a projecting portion with a tapered shape at peripheries of the source electrode and the drain electrode;forming a gate insulating layer over the source electrode and the drain electrode and in contact with a part of the semiconductor layer; andforming a gate electrode in a portion which is over the gate insulating layer and overlaps with the semiconductor layer.2. The method for manufacturing a semiconductor device according to claim 1 , wherein the semiconductor layer ...

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Номер записи: 109
25-06-2015 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF

Номер: US20150179776A1
Автор: ISHIZUKA Akihiro, Isobe Atsuo, Sasagawa Shinya, Sasaki Toshinari
Принадлежит:

An insulating layer is provided with a projecting structural body, and a channel formation region of an oxide semiconductor layer is provided in contact with the projecting structural body, whereby the channel formation region is extended in a three dimensional direction (a direction perpendicular to a substrate). Thus, it is possible to miniaturize a transistor and to extend an effective channel length of the transistor. Further, an upper end corner portion of the projecting structural body, where a top surface and a side surface of the projecting structural body intersect with each other, is curved, and the oxide semiconductor layer is formed to include a crystal having a c-axis perpendicular to the curved surface. 1. A method for manufacturing a semiconductor device , comprising:forming an insulating layer including a projecting structural body that includes a curved surface in an upper end corner portion where a top surface of the projecting structural body and a side surface of the projecting structural body intersect with each other;forming an oxide semiconductor layer in contact with at least a part of the top surface and the side surface while heat treatment is performed;forming a source electrode and a drain electrode adjacent to the oxide semiconductor layer;forming a gate insulating layer over the oxide semiconductor layer; andforming a gate electrode over the gate insulating layer to cover at least a part of the top surface and the side surface.2. The method for manufacturing a semiconductor device claim 1 , according to claim 1 ,wherein the heat treatment is performed at a temperature higher than or equal to 400° C., andwherein the oxide semiconductor layer is formed so that the oxide semiconductor layer includes a crystal having a c-axis substantially perpendicular to the curved surface.3. The method for manufacturing a semiconductor device claim 1 , according to claim 1 ,wherein the insulating layer is etched to form the projecting structural body, ...

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Номер записи: 110
18-09-2014 дата публикации

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер: US20140264323A1
Автор: KURATA Motomu, Sasagawa Shinya
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

When an oxide semiconductor film is microfabricated, with the use of a hard mask, unevenness of a side surface of the oxide semiconductor film can be suppressed. Specifically, a semiconductor device comprises an oxide semiconductor film over an insulating surface; a first hard mask and a second hard mask over the oxide semiconductor film; a source electrode over the oxide semiconductor film and the first hard mask; a drain electrode over the oxide semiconductor film and the second hard mask; a gate insulating film over the source electrode and the drain electrode; and a gate electrode overlapping with the gate insulating film and the oxide semiconductor film, and the first and second hard masks have conductivity. 1. A semiconductor device comprising:an oxide semiconductor film;a first metal film and a second metal film over the oxide semiconductor film;a gate insulating film over the oxide semiconductor film, the first metal film, and the second metal film; anda gate electrode overlapping with the gate insulating film and the oxide semiconductor film,wherein an entire portion of each of the first metal film and the second metal film overlaps with the oxide semiconductor film.2. The semiconductor device according to claim 1 , further comprising:a first insulating film over the first metal film; anda second insulating film over the second metal film.3. The semiconductor device according to claim 2 , wherein each of the first insulating film and the second insulating film comprises silicon and one of oxygen and nitrogen.4. The semiconductor device according to claim 1 , further comprising:a first oxide film under the oxide semiconductor film; anda second oxide film over the oxide semiconductor film,wherein energy at bottom of conduction band in each of the first oxide film and the second oxide film is larger than energy at bottom of conduction band in the oxide semiconductor film.5. The semiconductor device according to claim 1 , further comprising:a first low- ...

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Номер записи: 111
02-07-2015 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20150187814A1
Автор: Miyairi Hidekazu, Sasagawa Shinya
Принадлежит:

A semiconductor device that is suitable for miniaturization is provided. A semiconductor device including a first element, a first insulator over the first element, a first barrier film over the first insulator, a first conductor over the first barrier film, a second barrier film over the first conductor, a second insulator over the second barrier film, and a semiconductor over the second insulator is provided. The first conductor is surrounded by the first barrier film and the second barrier film. 1. A semiconductor device comprising:a first transistor;a barrier film over the first transistor; and a first electrode in contact with the barrier film;', 'an oxide semiconductor layer over the first electrode;', 'a source electrode or a drain electrode connected to the oxide semiconductor layer; and', 'a second electrode over the first electrode,, 'a second transistor comprisingwherein the source electrode or the drain electrode is in an opening which is in the oxide semiconductor layer and reaches the first transistor, andwherein the first electrode is surrounded by the barrier film.2. The semiconductor device according to claim 1 , wherein the opening reaches a gate electrode of the first transistor.3. The semiconductor device according to claim 1 , wherein the barrier film comprises a first film in contact with side surfaces and a bottom surface of the first electrode and a second film in contact with a top surface of the first electrode.4. The semiconductor device according to claim 1 , wherein the barrier film comprises aluminum oxide.5. The semiconductor device according to claim 1 , further comprising an insulating layer containing excess oxygen between the barrier film and the oxide semiconductor layer.6. The semiconductor device according to claim 1 , wherein the first transistor comprises a silicon semiconductor.7. A semiconductor device comprising:a first transistor;a first barrier film over the first transistor; a first electrode in contact with the first ...

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Номер записи: 112
18-09-2014 дата публикации

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20140273343A1
Автор: HOSOBA Miyuki, ITO Shunichi, MURAOKA Taiga, Sasagawa Shinya, Suzawa Hideomi
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks. In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. In etching steps, a first etching step is performed by dry etching in which an etching gas is used, and a second etching step is performed by wet etching in which an etchant is used. 1. A method for manufacturing a semiconductor device , comprising:forming a gate electrode layer over a substrate having an insulating surface;stacking a gate insulating layer, an oxide semiconductor film, and a conductive film over the gate electrode layer;forming a first mask layer over the gate insulating layer, the oxide semiconductor film, and the conductive film;performing a first etching with the first mask layer to etch the oxide semiconductor film and the conductive film so that an oxide semiconductor layer and a conductive layer are formed;forming a second mask layer by ashing the first mask layer; andperforming a second etching with the second mask layer to etch the oxide semiconductor layer and the conductive layer so that an oxide semiconductor layer having a depression, a source electrode layer, and a drain electrode layer are formed,wherein the first mask layer is formed using a light-exposure mask,wherein the first etching is dry etching with use of an etching gas,wherein the second etching is wet etching with use of an etchant, andwherein the oxide semiconductor layer having the depression includes a region with a smaller thickness than a region overlapping with the source electrode layer or the drain ...

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Номер записи: 113
30-06-2016 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20160190347A1
Автор: Hanaoka Kazuya, KOBAYASHI Yoshiyuki, KURATA Motomu, Matsubayashi Daisuke, Sasagawa Shinya
Принадлежит:

A semiconductor device with favorable electrical characteristics is provided. The semiconductor device includes an insulating layer, a semiconductor layer over the insulating layer, a source electrode layer and a drain electrode layer electrically connected to the semiconductor layer, a gate insulating film over the semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode layer overlapping with part of the semiconductor layer, part of the source electrode layer, and part of the drain electrode layer with the gate insulating film therebetween. A cross section of the semiconductor layer in the channel width direction is substantially triangular or substantially trapezoidal. The effective channel width is shorter than that for a rectangular cross section. 1. (canceled)2. A semiconductor device comprising:an insulating layer;an oxide semiconductor layer on the insulating layer;a source electrode layer and a drain electrode layer on and in electrical contact with the oxide semiconductor layer;a gate insulating film over the oxide semiconductor layer; anda gate electrode layer over the oxide semiconductor layer, the gate insulating film being interposed between the gate electrode layer and the oxide semiconductor layer, {'br': None, 'i': a/', '+b', 'D Подробнее

Номер записи: 114
25-09-2014 дата публикации

Semiconductor device and manufacturing method of the same

Номер: US20140284595A1
Автор: Motomu Kurata, Shinya Sasagawa, Taiga MURAOKA
Принадлежит: Semiconductor Energy Laboratory Co Ltd

A semiconductor device for miniaturization is provided. The semiconductor device includes a semiconductor layer; a first electrode and a second electrode that are on the semiconductor layer and apart from each other over the semiconductor layer; a gate electrode over the semiconductor layer; and a gate insulating layer between the semiconductor layer and the gate electrode. The first and second electrodes comprise first conductive layers and second conductive layers. In a region overlapping with the semiconductor layer, the second conductive layers are positioned between the first conductive layers, and side surfaces of the second conductive layers are in contact with side surfaces of the first conductive layers. The second conductive layers have smaller thicknesses than those of the first conductive layers, and the top surface levels of the second conductive layers are lower than those of the first conductive layers.

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Номер записи: 115
20-06-2019 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE

Номер: US20190189643A1
Автор: HODO Ryota, KURATA Motomu, OKAMOTO Satoru, Sasagawa Shinya, Yamazaki Shunpei
Принадлежит:

First to third insulators are successively formed in this order over a first conductor over a semiconductor substrate; a hard mask with a first opening is formed thereover; a resist mask with a second opening is formed thereover; a third opening is formed in the third insulator; a fourth opening is formed in the second insulator; the resist mask is removed; a fifth opening is formed in the first to third insulators; a second conductor is formed to cover an inner wall and a bottom surface of the fifth opening; a third conductor is formed thereover; polishing treatment is performed so that the hard mask is removed, and that levels of top surfaces of the second and third conductors and the third insulator are substantially equal to each other; and an oxide semiconductor is formed thereover. The second insulator is less permeable to hydrogen than the first and third insulators, the second conductor is less permeable to hydrogen than the third conductor. 1. A semiconductor device comprising:a first insulator;a second insulator over the first insulator;a third insulator over the second insulator; anda plug embedded in the first to third insulators;wherein the plug comprises a first conductor and a second conductor,wherein the first conductor is in contact with the first to third insulators,wherein the second conductor is in contact with the first conductor,wherein the second insulator is less permeable to hydrogen than the first insulator, andwherein the first conductor is less permeable to hydrogen than the second conductor.2. The semiconductor device according to claim 1 , wherein the first conductor comprises tantalum and nitrogen.3. The semiconductor device according to claim 1 , wherein the second insulator comprises aluminum and oxygen.4. A semiconductor device comprising:a semiconductor substrate;a first insulator over the semiconductor substrate;a second insulator over the first insulator;a third insulator over the second insulator;a plug embedded in the first to ...

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Номер записи: 116
25-09-2014 дата публикации

METHOD FOR PROCESSING THIN FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20140287552A1
Автор: KURATA Motomu, MURAOKA Taiga, Sasagawa Shinya, TOCHIBAYASHI Katsuaki
Принадлежит: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

A stable and minute processing method of a thin film is provided. Further, a miniaturized semiconductor device is provided. A method for processing a thin film includes the following steps: forming a film to be processed over a formation surface; forming an organic coating film over the film to be processed; forming a resist film over the organic coating film; exposing the resist film to light_or_an electron beam; removing part of the resist film by development to expose part of the organic coating film; depositing an organic material layer on the top surface and a side surface of the resist film by plasma treatment; etching part of the organic coating film using the resist film and the organic material layer as masks to expose part of the film to be processed; and etching part of the film to be processed using the resist film and the organic material layer as masks. 1. A method for processing a thin film , comprising the steps of:forming a film;forming a resist film over the film;exposing the resist film to light or an electron beam;removing part of the resist film, which is exposed to the light or the electron beam;depositing an organic material layer on a side surface of the resist film; andetching part of the film using the resist film and the organic material layer as masks.2. The method for processing the thin film according to claim 1 , further comprising:forming an organic film on the film after forming the film and before forming the resist film; andetching part of the organic film using the resist film and the organic material layer as masks to expose part of the film.3. The method for processing the thin film according to claim 1 , wherein the step of exposing the resist film to light is performed using extreme ultraviolet light or X-rays.4. The method for processing the thin film according to claim 2 ,wherein the organic material layer is deposited by plasma treatment,wherein the plasma treatment is performed using a gas including fluorine and carbon, ...

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Номер записи: 117
12-07-2018 дата публикации

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE

Номер: US20180197997A1
Автор: Hamada Takashi, ITO Daigo, KURATA Motomu, Matsubayashi Daisuke, NAGAI Masaharu, Okazaki Yutaka, Sasagawa Shinya, YAMADE Naoto, Yamamoto Yoshiaki
Принадлежит:

A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer. The second and third regions each include a region containing an element N (N is phosphorus, argon, or xenon). 1. (canceled)2. A method for manufacturing a semiconductor device comprising the steps of:forming an insulating layer over an oxide semiconductor layer;forming a groove in the insulating layer;forming a conductive film over the insulating layer such that a part of the conductive film is provided in the groove;forming a gate electrode layer by removing the conductive film partially such that the part of the conductive film remains in the groove;etching the insulating layer such that at least part of the insulating layer which overlaps the oxide semiconductor layer is removed after forming the gate electrode layer; andforming a source region and a drain region by adding an ion to the oxide semiconductor layer using the gate electrode layer as a mask after etching the insulating layer.3. The method for manufacturing a semiconductor device claim 2 , according to claim 2 ,wherein phosphorus, argon, or xenon is added as the ion.4. The method for ...

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Номер записи: 118