23-06-2023 дата публикации
Номер: CN116288720A
Принадлежит:
The invention belongs to the technical field of single crystal growth equipment, and particularly relates to a side-opening resistance type silicon carbide single crystal growth furnace which comprises a frame, a growth furnace body is installed on the frame, a hinge lug is welded to the outer side wall of the growth furnace body, and the hinge lug is connected with a furnace body door through a hinge shaft; a split type thermal field structure is arranged in the growth furnace body and comprises a thermal field body and a wedge-shaped thermal field heat preservation component. The structure of the growth furnace body is designed, an up-and-down discharging mode is changed into a side discharging mode, brand new design is carried out aiming at the inconvenience of taking and placing a graphite crucible, and the relative position of the graphite crucible to a heating area can be ensured by adopting side opening type material taking and placing operation. A side opening type furnace door ...
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