A semiconductor multilayer structure and a manufacturing method thereof

The invention discloses a semiconductor multilayer structure and a manufacturing method thereof. The semiconductor multilayer structure comprises a plurality of layers of first conducting layers, a plurality of layers of first insulating layers and a second conducting layer. The plurality of layers of first conducting layers are arranged at intervals. Each first conducting layer is provided with an upper surface, a lower surface arranged opposite to the upper surface and sidewalls. The first insulating layers surround the peripheries of the first conducting layers, and each first insulating layer at least covers a portion of the upper surface, a portion of the lower surface, and the sidewalls of each first conducting layer. The second conducting layer covers the first conducting layers and the first insulating layers.

Asymmetric floating grid NAND flash memory

Storage apparatus and manufacture method thereof

The invention discloses a storage apparatus and a manufacture method thereof. The storage apparatus comprises a substrate, a 3D memory array, a periphery circuit and a conductive connection structure. The 3D memory array and the periphery circuit are arranged on the substrate in a laminated mode. The periphery circuit comprises a patterning metal layer and a contact structure. The contact structure is electrically connected with the patterning metal layer. The connective connection structure is electrically connected with the patterning metal layer. The 3D memory array is connected with the periphery circuit through the conductive connection structure.

Special quotation system and method for enterprises

The invention provides an inter-enterprise special quotation system and method, and the system comprises a function authorization module which is used for authorizing the functions of employees applying for joining an enterprise; and the exclusive quotation module is used for setting exclusive prices for the transaction objects and sending the exclusive prices to the successfully authorized employees. According to the invention, the privacy of the transaction price of the enterprise is solved, and the enterprise can safely carry out transaction on the platform without worrying about the leakage of the transaction price.

Semiconductor structure and manufacturing method thereof

The invention discloses a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises a stack structure, a plurality of first conductive blocks, a plurality of first conductive layers, a plurality of second conductive layers and a plurality of conductive damascene structures. The stack structure is formed on a substrate and comprises a plurality of conductive strips and a plurality of insulating strips, and the conductive strips and the insulating strips are arranged in an interlaced mode. The first conductive blocks are formed on the stack structure, and the first conductive layers and the second conductive layers are formed on two side walls of the stack structure respectively. The conductive damascene structures are formed on two sides of the stack structure, and each conductive block is electrically connected with the corresponding conductive damascene structure through the corresponding first conductive layer and the corresponding second conductive ...

Semiconductor array arrangement comprising carrier supply

The invention discloses a semiconductor array arrangement comprising a carrier supply. The semiconductor array arrangement is applicable to a thin film transistor base material storage device of a memory through a hole carrier supply. The hole carrier supply can comprise a diode with a first end and a second end. An NAND series arrangement is formed by coupling a first switch at a first tail end to a bit line and coupling a second switch at a second tail end to the first end of the diode. A first source line and a second source line which can be individually driven are coupled to the first end and the second end of the diode respectively. A circuit coupled to the first source line and the second source line biases the first source line and the second source line according to an operation mode under different bias conditions including forward bias conditions or reverse bias conditions.

Integrated circuit device and manufacturing method thereof

The invention discloses an integrated circuit device and a manufacturing method thereof. The integrated circuit device comprises a substrate; the substrate comprises a first region and a second region; a recess is formed in the first region; a lamination layer provided with a plurality of active layers and a plurality of insulating layers arranged in a stagger mode is deposited in the recess; the lamination layer comprises a specific insulating layer; the specific insulating layer comprises a first thickness; the sum of the first thickness, the thicknesses of the active layers and the thicknesses of other insulating layers in the lamination layer is actually the depth of the recess; the differences between the first thickness and the thicknesses of other insulating layers expect the specific insulating layer are within the technical difference range of the depth of the recess, the thicknesses of the active layers and the thicknesses of the insulating layers. The device comprises a flat ...

Three-dimensional laminated semiconductor structure and manufacturing method thereof

The invention discloses a three-dimensional laminated semiconductor structure and a manufacturing method of the three-dimensional laminated semiconductor structure. The three-dimensional laminated semiconductor structure comprises a plurality of oxide layer, a plurality of conducting layers, at least one contact hole, an insulating layer and conducting object material, wherein the multiple oxide layers and the multiple conducting layers are laminated in a staggered mode; the at least one contact hole is arranged perpendicular to the multiple oxide layers and the multiple conducting layers and extends to one of the conducting layers; the insulating layer is formed on the two sides of the contact hole; the conducting object material is filled into the contact hole and connected with the corresponding conducting layer; the conducting layer corresponding to the contact hole comprises metal silicide, and the metal silicide can be formed on the edge or all of the corresponding conducting layer ...

Memory device and manufacturing method thereof

The present invention discloses a memory device and a manufacturing method thereof. The memory device includes a driver comprising a PN-junction in the form of a multilayer stack including a first doped semiconductor region having a first conductivity type, and a second doped semiconductor plug having a second conductivity type different with the first conductivity type, the first and second doped semiconductors defining a PN junction therebetween, in which the first doped semiconductor region is formed in a single-crystalline semiconductor, and the second doped semiconductor region includes a polycrystalline semiconductor. Also, a method for making a memory device includes forming a first doped semiconductor region of a first conductivity type in a single-crystal semiconductor, such as on a semiconductor wafer; and forming a second doped polycrystalline semiconductor region of a second conductivity type different with the first conductivity type, defining a PN junction between the first ...

Memory element and manufacturing method thereof

Semiconductor structure and manufacturing method thereof

The invention discloses a semiconductor structure and a manufacturing method thereof. The manufacturing method comprises the following steps: forming arrayed semiconductor units on a substrate; forming a material layer on the semiconductor units; forming a first patterned mask layer on the semiconductor units, wherein the first patterned mask layer has mask openings which correspond to parts of the semiconductor units and expose the material layer; and removing parts, exposed by the mask openings, of the material layer, and retaining parts, disposed on the side walls of the semiconductor units exposed by the mask openings, of the material layer to form gap wall structures.

Three-dimensional gate structure with horizontal extension portions and manufacturing method of three-dimensional grid structure with horizontal extension portions

The invention discloses a three-dimensional gate structure with horizontal extension portions and a manufacturing method of the three-dimensional gate structure with the horizontal extension portions. A device on an integrated circuit includes a stack layer comprising alternate semiconductor lines and insulated lines, and a gate structure which is arranged on semiconductor line stacks. The gate structure includes a vertical portion and the horizontal extension portions, wherein the vertical portion is adjacent to at least one side of the stack layer, and the horizontal extension portions are arranged between the semiconductor lines; compared with side edges of the semiconductor lines, side edges of the insulated lines can be recessed, so that at least one side of the stack layer comprises recessed portions between the semiconductor lines; the horizontal extension portions can be located in the recessed portions; and the horizontal extension portions are provided with inner side surfaces ...

Management system and method for purchasing commodities

The invention provides a management system and method for purchasing commodities, and the system comprises an authorization management module which is used for searching a target group in a directory and carrying out the management authorization; the group management switch module is used for starting or stopping purchase directory management of the target group according to the operation of the authorized administrator in the target group; and the directory management module is used for performing authority management on the flow of the employees in the target group when the commodities are purchased and ordered to the directory of the target group. According to the invention, group purchasing is more convenient, the price of purchased commodities is stable, the purchasing cost is lower, and the efficiency is higher. Commodity sharing prices can be shared by all groups.