SEMICONDUCTOR LIGHT EMITTING ELEMENT

... [Problem] The technical problem is to provide a semiconductor light emitting element that improves the light extraction efficiency of the semiconductor light emitting element that has an active layer with a 3 dimensional fine structure. [Solution] This semiconductor light emitting element 100 has: a substrate 110; a plurality of columnar semiconductors 130 on the substrate 110; a burying layer 140 that buries the gap between the plurality of columnar semiconductors 130; and a light extraction surface S1. The light extraction surface S1 has a plurality of convex parts D1. The plurality of columnar semiconductors 130 have a hexagonal columnar shape and are also placed at a first pitch interval J1. The plurality of convex parts D1 are placed at a second pitch interval J2. The first pitch interval J1 and the second pitch interval J2 are different.

SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT

A semiconductor light-emitting element (10) comprises: a growth substrate (11); a mask (13) formed on the growth substrate (11); and a columnar semiconductor layer grown from an opening provided in the mask. The columnar semiconductor layer has an n-type nanowire layer (14) formed at a center, an active layer (15) formed on the outer circumference of the n-type nanowire layer (14), and a p-type semiconductor layer (16) formed on the outer circumference of the active layer (15). The opening rate of the opening is 0.1-5.0%, and a light-emitting wavelength is 480 nm or more.

AUTOMOTIVE HEADLAMP, HEAT RADIATING MECHANISM, LIGHT-EMITTING APPARATUS AND LIGHT SOURCE FIXING MEMBER

In an automotive headlamp, a light-emitting module is configured such that a light-emitting element and a control circuit unit for controlling the lighting of the light-emitting element are structured integrally with each other. A control circuit unit in a position anterior to the light-emitting element in a lamp unit is located below a shade section so that the control circuit unit can be clear of the path of light used to form a low beam light distribution pattern of the light emitted by the light-emitting element. In this setting, the light-emitting element is so located that a main optical axis Ax is perpendicular respect to an optical axis Ax of the lamp unit and that a light-emitting portion of the light-emitting element protrudes higher than the control circuit unit in the direction of the main optical axis Ax 1. An automotive headlamp comprising:a light-emitting module configured such that a light source and a control circuit unit for controlling the lighting of the light source are structured integrally with each other; anda reflector having a reflecting surface for reflecting light emitted from the light source and collecting the reflected light,wherein the control circuit unit is disposed in a position anterior to the light source in a lamp unit.2. An automotive headlamp according to claim 1 , wherein the control circuit unit in a position anterior to the light source in the lamp unit is so located as to be clear of the path of light used to form a light distribution pattern of the light emitted by the light source.3. An automotive headlamp according to claim 2 , wherein the light-emitting module including a cover for covering at least a part of the control circuit unit claim 2 ,wherein the cover has a shade portion that forms a peripheral part of the light distribution pattern by shielding a part of the light emitted by the light source.4. An automotive headlamp according to claim 1 , wherein the light source is disposed such that a main optical axis of ...

LIGHT EMITTING MODULE, METHOD FOR MANUFACTURING LIGHT EMITTING MODULE, AND VEHICULAR LAMP

Provided is a light emitting module in which an LED device is mounted and power is supplied to the LED device by a gold wire. The light emitting module includes a first resin (sealing material) that seals the gold wire and a second resin (dam wall) that surrounds at least a portion of the outer peripheral of the first resin. The first resin has a lower viscosity and a lower elastic modulus compared to the second resin, and protects the gold wire mechanically and chemically. The second resin suppresses the first resin from being flowed out toward the peripherals, and, as a result, the sealing state of the gold wire by the first resin may be maintained. 1. A light emitting module comprising:a semiconductor light emitting device mounted on the light emitting module;a metal wire configured to supply power to the semiconductor light emitting device;a first resin configured to seal the metal wire; anda second resin configured to surround at least a portion of an outer peripheral of the first resin.2. The light emitting module of claim 1 , wherein the first resin has a lower viscosity and a lower elastic modulus compared to the second resin.3. A vehicular lamp comprising a light source configured by the light emitting module of .4. A vehicular lamp comprising a light source configured by the light emitting module of .5. A manufacturing method comprising:forming a dam wall with a second resin in at least a portion of an area that surrounds a metal wire through which power is supplied to a semiconductor light emitting device mounted on the light emitting module; andfilling a first resin which has a lower viscosity and a lower elastic modulus compared to the second resin in an area surrounded by the dam wall formed with the second resin or an area surrounded by a dam wall including the dam wall formed with the second resin, thereby sealing the metal wire. This application is based on and claims priority from Japanese Patent Application No. 2011-249386, filed on Nov. 15, 2011, ...

CIRCUIT MODULE, LIGHT EMITTING MODULE, AND AUTOMOTIVE LAMP

A circuit module includes: a lighting control circuit that controls lighting of a semiconductor light emitting element; a first heat radiating member on which the lighting control circuit is mounted; a second heat radiating member that is separated from the first heat radiating member and has a surface on which the semiconductor light emitting element is mounted; and a connecting mechanism having both a housing that connects the first heat radiating member and the second heat radiating member together and a conductive portion that transmits a signal from the lighting control circuit to the semiconductor light emitting element. The housing is formed of a material having a coefficient of thermal conductivity lower than those of the first heat radiating member and the second heat radiating member. 1. A circuit module comprising:a lighting control circuit configured to control lighting of a semiconductor light emitting element;a first heat radiating member on which the lighting control circuit is mounted;a second heat radiating member that is separated from the first heat radiating member and has a mounting surface on which the semiconductor light emitting element is mounted; anda connecting mechanism having both a connecting portion that connects the first heat radiating member and the second heat radiating member together and a conductive portion that transmits a signal from the lighting control circuit to the semiconductor light emitting element, whereinthe connecting portion is formed of a material having a coefficient of thermal conductivity lower than those of the first heat radiating member and the second heat radiating member.2. A light emitting module comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the circuit module according to ; and'}a semiconductor light emitting element mounted on the mounting surface of the second heat radiating member.3. The light emitting module according to claim 2 , whereinthe highest temperature at which the lighting ...

Circuit module, light emitting module, and automotive lamp

In a circuit module, a supporting member has both an element mounting surface on which a package can be mounted and a circuit mounting surface on which a lighting control circuit that controls lighting of a semiconductor light emitting element can be mounted. The lighting control circuit is mounted on the circuit mounting surface. The circuit mounting surface is formed so as to be orthogonalized or inclined with respect to the element mounting surface. Thereby, the length in the longitudinal direction of the circuit module can be made smaller in comparison with that of a circuit module in which a circuit mounting surface and an element mounting surface are formed on the same plane.

AUTOMOTIVE HEADLAMP, HEAT RADIATING MECHANISM, LIGHT-EMITTING APPARATUS AND LIGHT SOURCE FIXING MEMBER

In an automotive headlamp, a light-emitting module is configured such that a light-emitting element and a control circuit unit for controlling the lighting of the light-emitting element are structured integrally with each other. A control circuit unit in a position anterior to the light-emitting element in a lamp unit is located below a shade section so that the control circuit unit can be clear of the path of light used to form a low beam light distribution pattern of the light emitted by the light-emitting element. In this setting, the light-emitting element is so located that a main optical axis Ax is perpendicular respect to an optical axis Ax of the lamp unit and that a light-emitting portion of the light-emitting element protrudes higher than the control circuit unit in the direction of the main optical axis Ax 1. A heat radiation mechanism comprising: a first heat radiation member configured to radiate heat of a light source; and a second heat radiation member configured to radiate heat generated by a control circuit board for controlling the lighting of the light source , the second heat radiation member being placed such that the second heat radiation member overlaps with at least part of the first heat radiation member as viewed from a first direction parallel to the control circuit board , wherein the first heat radiation member is placed such that the first heat radiation member overlaps with at least part of the control circuit board as viewed from a second direction perpendicular to the control circuit board.2. A heat radiation mechanism according to claim 1 , further comprising a heat separation member whose thermal conductivity is lower than that of the first radiation member and that of the second radiation member claim 1 , wherein the first heat radiation member and the second heat radiation member are fixed to each other with the heat separation member held between the first heat radiation member and the second heat radiation member.3. A heat ...

SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT EMITTING DEVICE

Provided is a semiconductor light emitting device including a growth substrate; a pillar-shaped semiconductor layer formed on the growth substrate; and a buried semiconductor layer formed to cover the pillar-shaped semiconductor layer, wherein the pillar-shaped semiconductor layer has an n-type nanowire layer formed at a center, an active layer formed on an outermore side than the n-type nanowire layer, a p-type semiconductor layer formed on an outermore side than the active layer and a tunnel junction layer formed on an outermore side than the p-type semiconductor layer, and wherein at least a part of the pillar-shaped semiconductor layer is provided with a removed region formed by removing from the buried semiconductor layer to a part of the tunnel junction layer. 1. A semiconductor light emitting device comprising:a growth substrate;a pillar-shaped semiconductor layer formed on the growth substrate; anda buried semiconductor layer formed to cover the pillar-shaped semiconductor layer,wherein the pillar-shaped semiconductor layer has an n-type nanowire layer formed at a center, an active layer formed on an outermore side than the n-type nanowire layer, a p-type semiconductor layer formed on an outermore side than the active layer and a tunnel junction layer formed on an outermore side than the p-type semiconductor layer, andwherein at least a part of the pillar-shaped semiconductor layer is provided with a removed. region formed by removing from the buried semiconductor layer to apart of the tunnel junction layer.2. The semiconductor light emitting device according to claim 1 , wherein a plurality of the pillar-shaped semiconductor layers is provided claim 1 , and the removed region is provided over the plurality of pillar-shaped semiconductor layers.3. The semiconductor light emitting device according to claim 1 , wherein the removed region is removed to a part of the p-type semiconductor layer claim 1 ,4. The semiconductor light emitting device according to ...

LIGHT EMITTING APPARATUS AND AUTOMOTIVE LAMP

A light emitting apparatus includes LED chips and a light condenser condensing the light emitted from the LED chips. The light condenser has a first opening functioning as an incident part through which the light emitted from the LED chips enters, a side surface function as a reflector that reflects the light having entered through the first opening, and a second opening functioning as an emission part that emits the light reflected by the side surface. A phosphor layer, which converts the wavelength of the light emitted from the LED chips and emits the wavelength-converted light, is formed in the first opening. The light condenser is arranged such that the phosphor layer is located on the light emission surfaces of the LED chips. 1. A light emitting apparatus comprising:a mounting part that mounts a light emitting device thereon; and an incident part through which the light emitted from the light emitting device enters;', 'a reflector that reflects light entering from the incident part; and', 'an emission part that emits light reflected by the reflector,, 'a light condenser that condenses light emitted from the light emitting device, the light condenser includingwherein a phosphor layer, which converts a wavelength of the light emitted from the light emitting device and emits the wavelength-converted light, is formed in the incident part, andwherein the light condenser is arranged such that the phosphor layer is located on a light emission surface of the light emitting device.2. The light emitting apparatus according to claim 1 , wherein the light condenser is of a frame shape having a first opening claim 1 , a second opening disposed counter to the first opening claim 1 , and a side surface part disposed in between the first opening and the second opening claim 1 ,wherein the first opening functions as the incident part, the second opening functions as the emission part, and the reflector is formed such that a metallic film is formed on an inner surface of the ...

Circuit module, light emitting module, and automotive lamp

A circuit module includes: a lighting control circuit that controls lighting of a semiconductor light emitting element; a first heat radiating member on which the lighting control circuit is mounted; a second heat radiating member that is separated from the first heat radiating member and has a surface on which the semiconductor light emitting element is mounted; and a connecting mechanism having both a housing that connects the first heat radiating member and the second heat radiating member together and a conductive portion that transmits a signal from the lighting control circuit to the semiconductor light emitting element. The housing is formed of a material having a coefficient of thermal conductivity lower than those of the first heat radiating member and the second heat radiating member.

Circuit module, light-emitting module, and vehicle lamp

Acceleration sensor, and pedometer

(57)【要約】 【課題】 さまざまな方向からの加速度を検出すること ができる加速度センサおよびこれを用いた歩数計を提供 する。 【解決手段】 加速度センサ１０は、１つの平面に沿っ て湾曲するベース部材１と、ベース部材１とともに湾曲 するようにベース部材１の上に設けられた圧電素子２ と、ベース部材１の一方端部１ａに設けられた錘部材３ とを備える。圧電素子２およびベース部材１は円弧状に 湾曲する。加速度センサ１０は、錘部材３が設けられる 一方端部１ａと反対側の他方端部１ｂに設けられ、基板 に固定される支持部材７をさらに備える。

発光モジュールとその製造方法及び車両用灯具

【課題】半導体発光素子に給電するための金属ワイヤの機械的、化学的な強度を高めた信頼性の高い発光モジュールを得る。 【解決手段】ＬＥＤ素子２３を搭載し、金属ワイヤ３で給電を行う構成の発光モジュールＬＭであって、金属ワイヤ３を封止する第１樹脂（封止材）４と、第１樹脂の外周の少なくとも一部を囲む第２樹脂（ダム壁）５を備える。第１樹脂４は第２樹脂５に比較して低粘度、低弾性率であり、第１樹脂４で金属ワイヤ３を機械的、化学的に保護し、第２樹脂５は第１樹脂４が周囲に流れ出ることを防止し第１樹脂４による金属ワイヤ３の封止状態を保持する。 【選択図】 図１

Semiconductor light emitting element and method for manufacturing semiconductor light emitting element

A semiconductor light emitting element includes: a growth substrate; a mask formed on the growth substrate; and a columnar semiconductor layer grown from at least one opening that is provided in the mask. The columnar semiconductor layer includes an n-type nanowire layer formed at a center thereof, an active layer formed on an outer periphery of the n-type nanowire layer, and a p-type semiconductor layer formed on an outer periphery of the active layer. An opening ratio of the opening is 0.1% or more and 5.0% or less, and a light emission wavelength is 480 nm or more.

ユーザストレス対処システム、ユーザストレス対処方法及びユーザストレス対処プログラム

【課題】ユーザストレス対処システム、ユーザストレス対処方法、ユーザストレス対処プログラムを提供する。【解決手段】ユーザストレス対処システム１０は、ユーザストレス対処サーバ３０及び端末８０を備え、ユーザストレス対処サーバ３０は、データベース部３２、制御部４８、記憶部６８及び通信部７０を備え、データベース部３２は、ユーザデータテーブル３４、ユーザ固有値テーブル３６、アンケート回答値テーブル３８、ユーザ動向テーブル４０、重み付けテーブル４２、経過時間テーブル４４及び対処テーブル４６を備える。【選択図】図１

Semiconductor device and method for producing semiconductor device

A buried layer forming step includes three steps of a facet structure forming step, a c-plane forming step, and a flattening step. In the facet structure forming step, a buried layer grows to form a periodic facet structure that matches an arrangement pattern of columnar semiconductors. In the c-plane forming step, the buried layer grows such that a {0001} plane (upper surface) is formed in a region of the buried layer corresponding to an upper portion of the columnar semiconductor. In the flattening step, lateral growth of the buried layer is promoted and the c-plane formed in the c-plane forming step is widened to flatten a surface of the buried layer.

Lichtemittierendes Halbleiterelement und Verfahren zur Herstellung eines lichtemittierenden Halbleiterelements

Ein lichtemittierendes Halbleiterelement (10) umfasst: ein Wachstumssubstrat (11); eine auf dem Wachstumssubstrat (11) gebildete Maske (13); und eine säulenförmige Halbleiterschicht, die aus mindestens einer in der Maske vorgesehenen Öffnung aufgewachsen wurde. Die säulenförmige Halbleiterschicht weist eine in ihrer Mitte gebildete n-Nanodrahtschicht (14), eine auf einer Außenperipherie der n-Nanodrahtschicht (14) gebildete Aktivschicht (15), und eine auf einer Außenperipherie der Aktivschicht (15) gebildete p-Halbleiterschicht (16) auf. Ein Öffnungsverhältnis der Öffnung beträgt 0,1 % oder mehr und 5,0 % oder weniger und eine Lichtemissionswellenlänge beträgt 480 nm oder mehr.