Emission layer formed by rapid thermal formation process

Light device, integrated circuit and electronic device

THIN FILM FUEL CELL ELECTROLYTE AND METHOD FOR MAKING

EMISSION LAYER FORMED BY RAPID THERMAL FORMATION PROCESS

Thin film fuel cell electrolyte and method for making

Emitter and method of making

Nanostructure antireflection surfaces

Nanostructure antireflection surfaces

An antireflection surface formed using a plurality of nanostructures of a first material on a surface of a second material. The first material is different from the second material. The distribution of special periods of the nanostructures is set by a self-assembly operation. The surface of the second material is converted to operate as a graded index surface that is substantially antireflective for the wavelength of interest.

Integrated focusing emitter

Formation of a slot in a silicon substrate

A slot (18) is formed that reaches through a first side (21) of a silicon substrate (12) to a second side of the silicon substrate (12). A trench (15) is laser patterned. The trench (15) has a mouth at the first side (21) of the silicon substrate (12). The trench (15) does not reach the second side of the silicon substrate (12). the trench (15) is dry etched until a depth of at least a portion ofthe trench (15) is extended approximately to the second side of the silicon substrate (12). A wet etch is performed to complete formation of the slot (18). the wet etch etches silicon from all surfaces of the trench (15).

Micro electro mechanical system

The present specification discloses an exemplary system and method for forming a micro-electro mechanical system (MEMS) transducer. According to one exemplary embodiment disclosed herein, the MEMS transducer is formed from two wafers and decouples the thickness of the proof mass and flexures, thereby allowing each to be independently designed. Additionally, the present exemplary system and methodetches both sides of the wafer defining the flexures and the proof mass, allowing for optical alignment of the top and bottom wafers.

Misalignment-tolerant methods for fabricating multiplexing/demultiplexing architectures

Formation of a slot in a silicon substrate

A slot (18) is formed that reaches through a first side (21) of a silicon substrate (12) to a second side of the silicon substrate (12). A trench (15) is laser patterned. The trench (15) has a mouth at the first side (21) of the silicon substrate (12). The trench (15) does not reach the second side of the silicon substrate (12). the trench (15) is dry etched until a depth of at least a portion of the trench (15) is extended approximately to the second side of the silicon substrate (12). A wet etch is performed to complete formation of the slot (18). the wet etch etches silicon from all surfaces of the trench (15).

Method of manufacturing an emitter

A method is disclosed for creating an emitter having a flat cathode emission surface: First a protective layer that is conductive is formed on the flat cathode emission surface. Then an electronic lens structure is created over the protective layer. Finally, the protective layer is etched to expose the flat cathode emission surface.

Nanostructure antireflection surfaces

An antireflection surface formed using a plurality of nanostructures of a first material on a surface of a second material. The first material is different from the second material. The distribution of spacial periods of the nanostructures is set by a self-assembly operation. The surface of the second material is converted to operate as a graded index surface that is substantially antireflective for the wavelength of interest.

Emission layer formed by rapid thermal formation process

An emitter has a rapid thermal process (RTP) formed emission layer of SiO 2 , SiO x N y or combinations thereof. The emission layer formed by rapid thermal processing does not require electroforming to stabilize the film. The RTP grown films are stable and exhibit uniform characteristics from device to device.

Mems device with feedback control

A MEMS device includes at least one movable member and an active device having at least one property affected by the location of the movable member with respect to the active device. A control circuit is used to limit movement of the movable member based on observation of the property affected by the active device.

Reduced feature-size memory devices and methods for fabricating the same

This disclosure relates to systems and methods for reducing feature sizes. One of these methods enables formation of an original feature having a size in a length or width dimension of between about 100 and about 1000 nanometers with a system capable of patterning features to a minimum size of less than or about the size of the original feature and reduction of the size of the original feature below that of the minimum size of the system using an alignment-independent technique.

Integrated focusing emitter

A method for creating an electron lens (28) includes the steps of applying a polymer layer (12) on an emitter surface (36) of an electron emitter (60) and then curing the polymer layer (12) to reduce volatile content.

Tunneling emitter

An emitter (50,100) has an electron supply layer (10) and a tunneling layer (20) formed on the electron supply layer. Optionally, an insulator layer (78) is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer (14) is formed on the tunneling layer to provide a surface for energy emissions (22) of electrons (16) and/or photons (18). Preferably, the emitter is subjected to an annealing process (120,122) thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Emitter and method of making

An emitter (50,100) includes an electron supply (60) and a tunneling layer (20) disposed on the electron supply. A cathode layer (14) is disposed on the tunneling layer. A conductive electrode (53) has multiple layers of conductive material (52,54). The multiple layers include a protective layer (54) disposed on the cathode layer. The conductive electrode has been etched to define an opening (26) thereby exposing a portion of the cathode layer.

Multilayer film with stack of nanometer-scale thicknesses

This disclosure describes system(s) and/or method(s) enabling contacts for individual nanometer-scale-thickness layers of a multilayer film.

Forming a micro electro mechanical system

A method of forming a micro-electro mechanical system (MEMS), includes (1) removing material from a first wafer to define a first movable portion corresponding to an x-y accelerometer and a second movable portion corresponding to a z accelerometer, where each movable portion comprises at least one flexure member and at least one proof mass, each proof mass and flexure member being formed by the selective removal of material from a top side and a bottom side of first wafer; (2) bonding the first wafer to a second wafer comprising an electronic circuit, such that a gap is defined between the first wafer and the second wafer. The thickness of the at least one flexure member of the first movable portion is independent of a thickness of the at least one flexure member of the second movable portion and a thickness of the proof mass of the first movable portion is independent of a thickness of the at least one proof mass of the second movable portion.

Formation of a slot in a silicon substrate

Method of making a getter structure

A method of manufacturing a getter structure, including forming a support structure having a support perimeter, where the support structure is disposed over a substrate. In addition, the method includes forming a non-evaporable getter layer having an exposed surface area, where the non-evaporable getter layer is disposed over the support structure, and includes forming a vacuum gap between the substrate and the non-evaporable getter layer. The non-evaporable getter layer extends beyond the support perimeter of the support structure increasing the exposed surface area.

Emitter and method of making

An emitter (50,100) includes an electron supply (60) and a tunneling layer (20) disposed on the electron supply. A cathode layer (14) is disposed on the tunneling layer. A conductive electrode (53) has multiple layers of conductive material (52,54). The multiple layers include a protective layer (54) disposed on the cathode layer. The conductive electrode has been etched to define an opening (26) thereby exposing a portion of the cathode layer.

Integrated focusing emitter

A method for creating an electron lens includes the steps of applying a polymer layer on an emitter surface of an electron emitter and then curing the polymer layer to reduce volatile content.

Vacuum device having a getter

A vacuum device, including a substrate and a support structure having a support perimeter, where the support structure is disposed over the substrate. In addition, the vacuum device also includes a non-evaporable getter layer having an exposed surface area. The non-evaporable getter layer is disposed over the support structure, and extends beyond the support perimeter, in at least one direction, of the support structure forming a vacuum gap between the substrate and the non-evaporable getter layer increasing the exposed surface area.

Nanostructure antireflection surfaces

An antireflection surface formed using a plurality of nanostructures of a first material on a surface of a second material. The first material is different from the second material. The distribution of spatial periods of the nanostructures is set by a self-assembly operation. The surface of the second material is converted to operate as a graded index surface that is substantially antireflective for the wavelength of interest.

Thin film fuel cell electrolyte and method for making

An electrolyte has a core and at least one projection extending from the core. The core is supported on a substrate, and the at least one projection is separated from the substrate.

失準容忍之多工／解多工架構

Thin film fuel cell electrolyte and method for making

An electrolyte (10) has a core (12) and at least one projection (16) extending from the core (12). The core (12) is supported on a substrate (14) and the at least one projection (16) is separated from the substrate (14).

Dünnfilm-brennstoffzellenelektrolyt und verfahren zur herstellung

Misalignment-tolerant multiplexing/demultiplexing architectures

Misalignment-tolerant methods for fabricating multiplexing/demultiplexing architectures

Misalignment-tolerant methods for fabricating multiplexing/demultiplexing architectures

This disclosure relates to misalignment-tolerant processes for fabricating an array (1306) of conductive structures (1104) using oblique gates (810). One process enables fabricating at a tolerance (1002 or 1004) greater than a pitch (808) of conductive structures (1104).

Tunneling emitter with nanohole openings

Misalignment-tolerant methods for fabricating multiplexing/demultiplexing architectures

Misalignment-tolerant multiplexing/demultiplexing architectures

This disclosure relates to misalignment-tolerant multiplexing/demultiplexing architectures (1306). One architecture (1306) enables communication with a conductive-structure array (1102) having a narrow spacing and pitch (808). Another architecture (1306) can comprise address elements (810) having a width (806) substantially identical to that of conductive-structures (1104) with which each of these address elements (810) is capable of communicating. Another architecture (1306) can comprise rows (1402) of co-parallel address elements (810) oriented obliquely relative to address lines (1304) and/or conductive structures (1104).

Misalignment-tolerant multiplexing/demultiplexing architectures

This disclosure relates to misalignment-tolerant multiplexing/demultiplexing architectures (1306). One architecture (1306) enables communication with a conductive-structure array (1102) having a narrow spacing and pitch (808). Another architecture (1306) can comprise address elements (810) having a width (806) substantially identical to that of conductive-structures (1104) with which each of these address elements (810) is capable of communicating. Another architecture (1306) can comprise rows (1402) of co-parallel address elements (810) oriented obliquely relative to address lines (1304) and/or conductive structures (1104).

Tunneling emitters and method of making

An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling layer. A conductive layer is partially disposed on the cathode layer and partially on the insulator layer if present. The conductive layer defines an opening to provide a surface for energy emissions of electrons and/or photons. Preferably but optionally, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Method for forming a cantilever and tip

Dielectric light device

A light device includes an electron supply defining an emitter surface. A dielectric tunneling layer is disposed between the electron supply and a cathode layer. The cathode layer has at least partial photon transparency that is substantially uniform across the emitter surface.

Tunneling emitter

Dielectric light device

A light device includes an electron supply defining an emitter surface. A dielectric tunneling layer is disposed between the electron supply and a cathode layer. The cathode layer has at least partial photon transparency that is substantially uniform across the emitter surface.

Dielectric light device