07-02-2019 дата публикации
Номер: US20190040526A1
Принадлежит:
Method for fabricating a crystalline vanadium oxide (VO) film comprising the steps of: a) depositing an amorphous VOfilm on a substrate by pulsed DC magnetron sputtering using a vanadium target, wherein the substrate is exposed to a sputtering gas comprising an inert process gas and oxygen (O), and the substrate has a temperature of less than about 50° C.; and b) annealing the deposited amorphous VOfilm to crystallise the amorphous VOfilm into a crystalline VOfilm that exhibits an insulator-metal transition. The disclosed method for fabricating a crystalline VOfilm may be suitable for a broad range of substrates. 1. A method for fabricating a crystalline vanadium oxide (VO) film comprising the steps of:{'sub': 2', '2, 'a) depositing an amorphous VOfilm on a substrate by pulsed DC magnetron sputtering using a vanadium target, wherein the substrate is exposed to a sputtering gas comprising an inert process gas and oxygen (O), and the substrate has a temperature of less than about 50° C.; and'}{'sub': 2', '2', '2, 'b) annealing the deposited amorphous VOfilm to crystallise the amorphous VOfilm into a crystalline VOfilm that exhibits an insulator-metal transition.'}2. The method according to claim 1 , wherein the annealing is performed at a pressure in the range of about 20 Pa to about 50 Pa.3. The method according to claim 2 , wherein the annealing is performed at a pressure in the range of about 30 Pa to about 40 Pa.4. The method according to claim 1 , wherein the substrate temperature is in the range from about 20° C. to about 30° C.5. The method according to claim 4 , wherein the substrate temperature is about room temperature.6. The method according to claim 1 , wherein the inert process gas is argon (Ar).7. The method according to claim 6 , wherein the sputtering gas has an Omolar concentration in Ar in a range from about 20% to about 60%.8. The method according to claim 7 , wherein the sputtering gas has an Omolar concentration in Ar of about 30%.9. The method ...
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