02-06-2023 дата публикации
Номер: CN116209284A
Принадлежит:
The invention discloses a quantum dot heterojunction self-driven infrared photoelectric detector and a preparation method thereof, the quantum dot heterojunction self-driven infrared photoelectric detector comprises a metal top electrode, a narrow-band gap semiconductor quantum dot active layer, a carrier transport layer and a metal bottom electrode from top to bottom, the carrier transport layer is a zinc oxide nano colloid film layer added with metal (such as Ag, Au and Al) nano particles, and the metal bottom electrode is a metal bottom electrode. The narrow-band-gap semiconductor quantum dot active layer is a PbSe quantum dot thin film layer. The invention also discloses a preparation method of the self-driven infrared photoelectric detector. The structure that the metal (such as Ag, Au and Al) nanoparticle layer is inserted into the carrier transport layer (such as ZnO) can form a storage layer similar to a layer of carriers (such as electrons), hole injection barriers at a BbSe/ZnO ...
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