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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 29. Отображено 29.
31-05-2011 дата публикации

Self-topcoating photoresist for photolithography

Номер: US0007951524B2

Photoresist additive polymers and photoresist formulations that can be used in immersion lithography without the use of an additional topcoat. The resist compositions include a photoresist polymer, at least one photoacid generator, a solvent; and a photoresist additive polymer. Also a method of forming using photoresist formulations including photoresist additive polymers.

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16-06-2015 дата публикации

Resist performance for the negative tone develop organic development process

Номер: US0009057960B2

A process and composition for negative tone development comprises providing a photoresist film that generates acidic sites. Irradiating the photoresist film patternwise provides an irradiated film having exposed and unexposed regions where the exposed regions comprise imaged sites. Baking the irradiated film at elevated temperatures produces a baked-irradiated film comprising the imaged sites which after irradiating, baking, or both irradiating and baking comprise acidic imaged sites. Treating the baked-irradiated film with a liquid, gaseous or vaporous weakly basic compound converts the acidic imaged sites to a base treated film having chemically modified acidic imaged sites. Applying a solvent developer substantially dissolves regions of the film that have not been exposed to the radiant energy, where the solvent developer comprises a substantial non-solvent for the chemically modified acidic imaged sites. One-step simultaneous base treatment and solvent development employs a composition ...

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24-05-2007 дата публикации

Water castable-water strippable top coats for 193 nm immersion lithography

Номер: US2007117040A1
Принадлежит:

A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises a polymer which is sparingly soluble or insoluble in water at a temperature of about 25° C. or below but soluble in water at a temperature of about 60° C. or above. The polymer contains poly vinyl alcohol monomer unit and a poly vinyl acetate or poly vinyl ether monomer unit having the following polymer structure: wherein R is an aliphatic or alicyclic radical; m and n are independently integers, and are the same or different; and p is zero or 1. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is particularly useful in immersion lithography techniques using water as the imaging medium. The topcoat material of the present invention are also useful for immersion lithography employing organic liquid as immersion medium.

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31-01-2008 дата публикации

IMMERSION TOPCOAT MATERIALS WITH IMPROVED PERFORMANCE

Номер: US2008026330A1
Принадлежит:

A topcoat material for applying on top of a photoresist material is disclosed. The topcoat material comprises at least one solvent and a polymer which has a dissolution rate of at least 3000 Å/second in aqueous alkaline developer. The polymer contains a hexafluoroalcohol monomer unit comprising one of the following two structures: wherein n is an integer. The topcoat material may be used in lithography processes, wherein the topcoat material is applied on a photoresist layer. The topcoat material is preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.

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01-07-2010 дата публикации

GRADED TOPCOAT MATERIALS FOR IMMERSION LITHOGRAPHY

Номер: US20100168337A1

A topcoat material for immersion lithography and a method of performing immersion lithography using the topcoat material. The topcoat material includes a mixture of a first polymer and a second polymer. The first and second polymers of the topcoat material, when the topcoat material is formed into a topcoat layer between an immersion fluid and a photoresist layer, disperse non-homogenously throughout the topcoat layer.

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01-11-2007 дата публикации

SELF-TOPCOATING RESIST FOR PHOTOLITHOGRAPHY

Номер: US2007254235A1
Принадлежит:

Resist compositions that can be used in immersion lithography without the use of an additional topcoat are disclosed. The resist compositions comprise a photoresist polymer, at least one photoacid generator, a solvent; and a self-topcoating resist additive. A method of forming a patterned material layer on a substrate using the resist composition is also disclosed.

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01-11-2007 дата публикации

HIGH CONTACT ANGLE TOPCOAT MATERIAL AND USE THEREOF IN LITHOGRAPHY PROCESS

Номер: US2007254236A1
Принадлежит:

A topcoat material for application on top of a photoresist material is disclosed. The topcoat material comprises an acid-inert compound. The topcoat material also comprises a polymer or an oligomer or a cage structure which shows negligible intermixing with the imaging layer and is soluble in aqueous base developer. A method of forming a patterned material layer on a substrate and a coated substrate comprising the topcoat material is also disclosed.

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09-08-2011 дата публикации

Calixarene blended molecular glass photoresists and processes of use

Номер: US0007993812B2

Photoresist compositions include a blend of at least one fully protected calix[4]resorcinarene and at least one unprotected calix[4]resorcinarene, wherein the fully protected calix[4]resorcinarene has phenolic groups protected with acid labile protective groups; a photoacid generator; and a solvent, and wherein the blend and the photoacid generator are soluble in the solvent. Also disclosed are processes for generating a resist image on a substrate using the photoresist composition.

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07-08-2014 дата публикации

Resist Performance for the Negative Tone Develop Organic Development Process

Номер: US2014220495A1
Принадлежит:

A process and composition for negative tone development comprises providing a photoresist film that generates acidic sites. Irradiating the photoresist film patternwise provides an irradiated film having exposed and unexposed regions where the exposed regions comprise imaged sites. Baking the irradiated film at elevated temperatures produces a baked-irradiated film comprising the imaged sites which after irradiating, baking, or both irradiating and baking comprise acidic imaged sites. Treating the baked-irradiated film with a liquid, gaseous or vaporous weakly basic compound converts the acidic imaged sites to a base treated film having chemically modified acidic imaged sites. Applying a solvent developer substantially dissolves regions of the film that have not been exposed to the radiant energy, where the solvent developer comprises a substantial non-solvent for the chemically modified acidic imaged sites. One-step simultaneous base treatment and solvent development employs a composition ...

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02-12-2014 дата публикации

Positive tone organic solvent developed chemically amplified resist

Номер: US0008900802B2

Provided is a method for developing positive-tone chemically amplified resists with an organic developer solvent having at least one polyhydric alcohol, such as ethylene glycol and/or glycerol, alone or in combination with an additional organic solvent, such as isopropyl alcohol, and/or water. The organic solvent developed positive tone resists described herein are useful for lithography pattern forming processes; for producing semiconductor devices, such as integrated circuits (IC); and for applications where basic solvents are not suitable, such as the fabrication of chips patterned with arrays of biomolecules or deprotection applications that do not require the presence of acid moieties.

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21-06-2012 дата публикации

Fluoroalcohol Containing Molecular Photoresist Materials and Processes of Use

Номер: US20120156611A1

Phenolic molecular glasses such as calixarenes include at least one fluoroalcohol containing unit. The fluoroalcohol containing molecular glasses can be used in photoresist compositions. Also disclosed are processes for generating a resist image on a substrate using the photoresist composition.

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10-09-2013 дата публикации

Fluoroalcohol containing molecular photoresist materials and processes of use

Номер: US0008530136B2

Phenolic molecular glasses such as calixarenes include at least one fluoroalcohol containing unit. The fluoroalcohol containing molecular glasses can be used in photoresist compositions. Also disclosed are processes for generating a resist image on a substrate using the photoresist composition.

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14-08-2008 дата публикации

SELF-TOPCOATING PHOTORESIST FOR PHOTOLITHOGRAPHY

Номер: US2008193879A1
Принадлежит:

Photoresist additive polymers and photoresist formulations that can be used in immersion lithography without the use of an additional topcoat. The resist compositions include a photoresist polymer, at least one photoacid generator, a solvent; and a photoresist additive polymer. Also a method of forming using photoresist formulations including photoresist additive polymers.

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12-07-2016 дата публикации

Resist performance for the negative tone develop organic development process

Номер: US0009389516B2

A process and composition for negative tone development comprises providing a photoresist film that generates acidic sites. Irradiating the photoresist film patternwise provides an irradiated film having exposed and unexposed regions where the exposed regions comprise imaged sites. Baking the irradiated film at elevated temperatures produces a baked-irradiated film comprising the imaged sites which after irradiating, baking, or both irradiating and baking comprise acidic imaged sites. Treating the baked-irradiated film with a liquid, gaseous or vaporous weakly basic compound converts the acidic imaged sites to a base treated film having chemically modified acidic imaged sites. Applying a solvent developer substantially dissolves regions of the film that have not been exposed to the radiant energy, where the solvent developer comprises a substantial non-solvent for the chemically modified acidic imaged sites. One-step simultaneous base treatment and solvent development employs a composition comprising a mix of the basic compound and solvent developer.

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28-08-2014 дата публикации

POSITIVE TONE ORGANIC SOLVENT DEVELOPED CHEMICALLY AMPLIFIED RESIST

Номер: US20140242526A1

Provided is a method for developing positive-tone chemically amplified resists with an organic developer solvent having at least one polyhydric alcohol, such as ethylene glycol and/or glycerol, alone or in combination with an additional organic solvent, such as isopropyl alcohol, and/or water. The organic solvent developed positive tone resists described herein are useful for lithography pattern forming processes; for producing semiconductor devices, such as integrated circuits (IC); and for applications where basic solvents are not suitable, such as the fabrication of chips patterned with arrays of biomolecules or deprotection applications that do not require the presence of acid moieties.

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01-11-2007 дата публикации

TOPCOAT MATERIAL AND USE THEREOF IN IMMERSION LITHOGRAPHY PROCESSES

Номер: US2007254237A1
Принадлежит:

Disclosed is a topcoat composition comprising a polymer having a dissolution rate of at least 1500 Å/second in an aqueous alkaline developer, and at least one solvent. The topcoat composition can be used to coat a photoresist layer on a material layer on a substrate, for example, a semiconductor chip. Also disclosed is a method of forming a pattern in the material layer of the coated substrate.

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14-05-2013 дата публикации

Graded topcoat materials for immersion lithography

Номер: US0008440387B2

A topcoat material for immersion lithography and a method of performing immersion lithography using the topcoat material. The topcoat material includes a mixture of a first polymer and a second polymer. The first and second polymers of the topcoat material, when the topcoat material is formed into a topcoat layer between an immersion fluid and a photoresist layer, disperse non-homogenously throughout the topcoat layer.

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16-03-2010 дата публикации

Graded topcoat materials for immersion lithography

Номер: US0007678537B2

A topcoat material for immersion lithography and a method of performing immersion lithography using the topcoat material. The topcoat material includes a mixture of a first polymer and a second polymer. The first and second polymers of the topcoat material, when the topcoat material is formed into a topcoat layer between an immersion fluid and a photoresist layer, disperse non-homogenously throughout the topcoat layer.

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26-12-2013 дата публикации

ORGANIC SOLVENT DEVELOPABLE PHOTORESIST COMPOSITION

Номер: US20130344441A1

Provided is a hydrophobic negative tone developable (NTD) resist composition comprising (a) a hydrophobic polymer having (i) at least one nonpolar acid-stable group; and (ii) at least one nonpolar acid-labile group, and (b) a photoacid generator (PAG) that may or may not be bound to the polymer, wherein a nonpolar aromatic or aliphatic organic hydrocarbon solvent is used to develop the unexposed regions of the NTD resist film and the resist film is not developable in an aqueous base developer, such as 0.26 N TMAH. 1. A photoresist composition comprising:(a) a hydrophobic polymer comprising (i) at least one non-polar acid-stable group; and (ii) at least one non-polar acid-labile group, wherein the hydrophobic polymer does not have any polar groups; and(b) a photo acid generator (PAG),wherein upon patternwise exposure of the composition to radiation, the PAG dissociates to form a photo acid that reacts with the at least one non-polar acid-labile group resulting in increased polarity of the hydrophobic polymer, and further wherein upon development of the exposed composition with an organic hydrocarbon solvent, unexposed areas of the composition dissolve and exposed areas of the photoresist composition remain to give a negative tone image.4. The composition of claim 1 , wherein the at least non-polar one acid stable group of (a)(i) is selected from the group consisting of 2-vinylnapthylene claim 1 , styrene claim 1 , adamantyl methylmethacrylate claim 1 , and isobornyl methacrylate.5. The composition of claim 1 , wherein the at least non-polar one acid labile group of (a)(ii) is selected from the group consisting of ethylcyclopentyl methacrylate (ECPMA) claim 1 , methyl adamantyl methacrylate (MAdMA) claim 1 , ethyl cyclohexyl methacrylate (ECHMA) claim 1 , ethyl cyclooctyl methacrylate (ECOMA) claim 1 , and ethyl adamantyl methacrylate (EAdMA).6. The composition of claim 1 , wherein the hydrophobic polymer of (a) is selected from the group consisting of poly(2-vinyl ...

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10-03-2016 дата публикации

NEGATIVE-TONE RESIST COMPOSITIONS AND MULTIFUNCTIONAL POLYMERS THEREIN

Номер: US20160070169A1
Принадлежит:

A negative-tone resist composition is provided that contains a free photoacid generator and a multifunctional polymer covalently bound to a photoacid-generating moiety, where the composition is substantially free of cross-linking agents. Multifunctional polymers useful in conjunction with the resist composition are also provided, as is a process for generating a resist image on a substrate using the present compositions and polymers. 1. An aqueous base developable negative-tone resist composition substantially free of cross-linking agents and comprising:a multifunctional polymer comprised of first recurring units that impart solubility in aqueous base developer, second recurring units containing a polarity switching functionality that converts from a polar group to a nonpolar group in the absence of a cross-linking agent and in the presence of acid, and third recurring units containing a covalently attached photoacid-generating group; andfree photoacid generator.2. (canceled)3. The resist composition of claim 1 , further comprising an additional multifunctional polymer not covalently bound to a photoacid generating moiety.4. The resist composition of claim 1 , wherein the first recurring units comprise an aqueous base soluble functionality selected from phenols claim 1 , fluoroalcohols claim 1 , and sulfonamides.5. (canceled)7. The resist composition of claim 1 , wherein the first recurring units represent about 50 mol % to about 80 mol % of the multifunctional polymer claim 1 , the second recurring units represent about 10 mol % to about 40 mol % of the multifunctional polymer claim 1 , and the third recurring units represent about 1 mol % to about 10 mol % of the multifunctional polymer.8. The resist composition of claim 1 , wherein the multifunctional polymer further comprises a fourth type of recurring unit.9. The resist composition of claim 8 , wherein the fourth type of recurring unit is derived from an aromatic ring-bearing cyclic olefin monomer.10. The ...

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15-03-2018 дата публикации

Adhesive resins for wafer bonding

Номер: US20180072926A1
Принадлежит: International Business Machines Corp

An adhesive bonding method that includes bonding a handling wafer to a front side surface of a device wafer with an adhesive comprising N-substituted maleimide copolymers. The device wafer may then be thinned from the backside surface of the device wafer while the device wafer is adhesively engaged to the handling wafer. The adhesive can then be removed by laser debonding, wherein the device wafer is separated from the handling wafer.

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12-05-2016 дата публикации

Adhesive resins for wafer bonding

Номер: US20160133499A1
Принадлежит: International Business Machines Corp

An adhesive bonding method that includes bonding a handling wafer to a front side surface of a device wafer with an adhesive comprising N-substituted maleimide copolymers. The device wafer may then be thinned from the backside surface of the device wafer while the device wafer is adhesively engaged to the handling wafer. The adhesive can then be removed by laser debonding, wherein the device wafer is separated from the handling wafer.

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07-08-2014 дата публикации

Resist Performance for the Negative Tone Develop Organic Development Process

Номер: US20140220495A1

A process and composition for negative tone development comprises providing a photoresist film that generates acidic sites. Irradiating the photoresist film patternwise provides an irradiated film having exposed and unexposed regions where the exposed regions comprise imaged sites. Baking the irradiated film at elevated temperatures produces a baked-irradiated film comprising the imaged sites which after irradiating, baking, or both irradiating and baking comprise acidic imaged sites. Treating the baked-irradiated film with a liquid, gaseous or vaporous weakly basic compound converts the acidic imaged sites to a base treated film having chemically modified acidic imaged sites. Applying a solvent developer substantially dissolves regions of the film that have not been exposed to the radiant energy, where the solvent developer comprises a substantial non-solvent for the chemically modified acidic imaged sites. One-step simultaneous base treatment and solvent development employs a composition comprising a mix of the basic compound and solvent developer. 1. A process of producing negative-tone photoresist patterns using a photoresist developed with an organic solvent developer comprising the steps of:(a) providing a photoresist film that can be processed to generate acidic sites;(b) irradiating said photoresist film with radiant energy to provide an irradiated film having exposed and unexposed regions in said film, said exposed regions comprising imaged sites;(c) optionally baking said irradiated film at elevated temperatures to produce a baked irradiated film comprising said imaged sites:(d) said imaged sites comprise acidic sites formed after said irradiating or both said irradiating and said baking;(e) contacting said irradiated film with a basic compound comprising a Bronsted base, without dissolving said film, to form a base treated film;(f) optionally rinsing said base treated film in water or other solvent;(g) developing said treated film with an organic solvent ...

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09-05-2019 дата публикации

Nitrogen heterocycle-containing monolayers on metal oxides for binding biopolymers

Номер: US20190137879A1
Принадлежит: International Business Machines Corp

A crosslinked self-assembled monolayer (SAM), comprising surface groups containing a nitrogen-heterocycle, was formed on an oxygen plasma-treated silicon oxide or hafnium oxide top surface of a substrate. The SAM is covalently bound to the underlying oxide layer. The SAM was patterned by direct write methods using ultraviolet (UV) light of wavelength 193 nm or an electron beam, forming a line-space pattern comprising non-exposed SAM features. The non-exposed SAM features non-covalently bound DNA-wrapped carbon nanotubes (DNA-CNT) deposited from aqueous solution with a selective placement efficiency of about 90%. Good alignment of carbon nanotubes to the long axis of the SAM features was also observed. The resulting patterned biopolymer features were used to prepare a CNT based field effect transistor.

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03-09-2020 дата публикации

MULTIFUNCTIONAL POLYMERS

Номер: US20200278607A1
Принадлежит:

A negative-tone resist composition is provided that contains a free photoacid generator and a multifunctional polymer covalently bound to a photoacid-generating moiety, where the composition is substantially free of cross-linking agents. Multifunctional polymers useful in conjunction with the resist composition are also provided, as is a process for generating a resist image on a substrate using the present compositions and polymers. 115-. (canceled)16. A polymer comprising:(a) about 50 mol % to about 80 mol % first recurring units providing the polymer with aqueous base solubility and comprising an aqueous base soluble functionality selected from phenols, fluoroalcohols, and sulfonamides;(b) about 10 mol % to about 40 mol % second recurring units containing a polarity switching functionality that converts from a polar group to a nonpolar group in the presence of a polymer-bound acid generated upon exposure of the polymer to radiation;(c) about 1 mol % to about 10 mol % third recurring units that are covalently bound to a photoacid-generating group that generates the polymer-bound acid upon exposure of the polymer to radiation; and(d) optionally, fourth recurring units derived from an aromatic ring bearing cyclic olefin monomer.1720-. (canceled)21. The polymer of claim 16 , having a weight average molecular weight of 1 claim 16 ,000 to 50 claim 16 ,000.22. The polymer of claim 16 , having a weight average molecular weight of 1 claim 16 ,000 to 20 claim 16 ,000.23. The polymer of claim 16 , having a Polydispersity Index in the range of 1.0 to 3.0.24. The polymer of claim 23 , having a Polydispersity Index in the range of 1.0 to 2.5.25. The polymer of claim 22 , having a Polydispersity Index in the range of 1.0 to 2.5.27. The polymer of claim 26 , wherein:{'sup': '1', 'Ris H, m is zero (such that the unit derives from 4-hydroxystyrene);'}{'sup': 1', '2, 'Ris H, m is 1, and Ris o-methyl;'}{'sup': 1', '2, 'Ris H, m is 1, and Ris m-methyl;'}{'sup': 1', '2, 'Ris H, m is 2 ...

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29-10-2015 дата публикации

Resist performance for the negative tone develop organic development process

Номер: US20150309415A1
Принадлежит: International Business Machines Corp

A process and composition for negative tone development comprises providing a photoresist film that generates acidic sites. Irradiating the photoresist film patternwise provides an irradiated film having exposed and unexposed regions where the exposed regions comprise imaged sites. Baking the irradiated film at elevated temperatures produces a baked-irradiated film comprising the imaged sites which after irradiating, baking, or both irradiating and baking comprise acidic imaged sites. Treating the baked-irradiated film with a liquid, gaseous or vaporous weakly basic compound converts the acidic imaged sites to a base treated film having chemically modified acidic imaged sites. Applying a solvent developer substantially dissolves regions of the film that have not been exposed to the radiant energy, where the solvent developer comprises a substantial non-solvent for the chemically modified acidic imaged sites. One-step simultaneous base treatment and solvent development employs a composition comprising a mix of the basic compound and solvent developer.

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15-11-2018 дата публикации

Porous tin oxide films

Номер: US20180330955A1
Принадлежит: International Business Machines Corp

Initial film layers prepared from tin(II) chloride spontaneously generate open cavities when the initial film layers are thermally cured to about 400° C. using a temperature ramp of 1° C./minute to 10° C./minute while exposed to air. The openings of the bowl-shaped cavities have characteristic dimensions whose lengths are in a range of 30 nm to 300 nm in the plane of the top surfaces of the cured film layers. The cured film layers comprise tin oxide and have utility in gas sensors, electrodes, photocells, and solar cells.

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15-11-2022 дата публикации

Multifunctional polymers

Номер: US11500285B2
Принадлежит: International Business Machines Corp

A negative-tone resist composition is provided that contains a free photoacid generator and a multifunctional polymer covalently bound to a photoacid-generating moiety, where the composition is substantially free of cross-linking agents. Multifunctional polymers useful in conjunction with the resist composition are also provided, as is a process for generating a resist image on a substrate using the present compositions and polymers.

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26-12-2017 дата публикации

Adhesive resins for wafer bonding

Номер: US09850406B2
Принадлежит: International Business Machines Corp

An adhesive bonding method that includes bonding a handling wafer to a front side surface of a device wafer with an adhesive comprising N-substituted maleimide copolymers. The device wafer may then be thinned from the backside surface of the device wafer while the device wafer is adhesively engaged to the handling wafer. The adhesive can then be removed by laser debonding, wherein the device wafer is separated from the handling wafer.

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