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17-01-1968 дата публикации

Improvements in or relating to the manufacture of crystals of semiconductor materials

Номер: GB0001099637A
Автор: BRANDER ROBERT WILLIAM, SUTTON RICHARD PETER, SWALLOW GERALD HERBERT
Принадлежит:

... In a process for growing silicon carbide epitaxially, P-type silicon carbide crystals 4 are disposed at an angle to the horizontal in a sealed graphite vessel 1 containing lumps of silicon 6. A temperature difference is maintained between the top and bottom of the vessel by locating it in an eddy current heating coil or passing current through its walls by mounting between electrodes within a graphite shield in a water-cooled container (Fig. 2, not shown). The silicon melts (submerging the substrate crystals) and reacts with the graphite vessel to produce silicon carbide which is slightly soluble in the silicon. The carbide grows epitaxially on the cooler substrate crystals as N-type material due either to excess silicon or nitrogen included in the graphite.

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Номер записи: 1
06-06-1968 дата публикации

Improvements in or relating to apparatus incorporating electrical heating elements and processes involving the use of such apparatus

Номер: GB0001115951A
Автор: SUTTON RICHARD PETER, WILKES JOHN GEORGE
Принадлежит:

A heating element of tungsten carbide sintered without the use of a binder is used as a susceptor in the RF induction heating process for the epitaxial growth of a crystal of silicon carbide incorporating a p-n junction. The apparatus is also used for the epitaxial growth of a crystal of silicon. The heating element supports a substrate of n-type SiC which is exposed to a mixture of hydrogen and vapours of trichlorosilane, boron trichloride and hydrocarbon such as hexane or benzene to deposit p-type SiC. With a silicon substrate the reaction mixture is trichlorosilane and hydrogen. The tungsten carbide heating element is alternatively used as a resistance heater in a thin alloy zone re-crystallisation process (see Division B1).ALSO: A susceptor or resistor of unbonded sintered tungsten carbide is made by heating a mixture of pure carbon and tungsten powders to 2800 DEG C. in a graphite vessel, powdering the nodules of WC produced and then heating in a graphite mould to ...

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Номер записи: 2