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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 20. Отображено 19.
10-11-2016 дата публикации

MICROWAVE-INDUCED LOCALIZED HEATING OF CNT FILLED POLYMER COMPOSITES FOR ENHANCED INTER-BEAD DIFFUSIVE BONDING OF FUSED FILAMENT FABRICATED PARTS

Номер: US20160325491A1
Автор: Charles B. Sweeney, Micah J. Green, Mohammad Saed, SWEENEY CHARLES B, GREEN MICAH J, SAED MOHAMMAD, Sweeney Charles B., Green Micah J., Saed Mohammad
Принадлежит: TEXAS TECH UNIVERSITY SYSTEM

A microwave-induced heating of CNT filled (or coated) polymer composites for enhancing inter-bead diffusive bonding of fused filament fabricated parts. The technique incorporates microwave absorbing nanomaterials (carbon nanotubes (CNTs)) onto the surface or throughout the volume of 3D printer polymer filament to increase the inter-bead bond strength following a post microwave irradiation treatment and/or in-situ focused microwave beam during printing. The overall strength of the final 3D printed part will be dramatically increased and the isotropic mechanical properties of fused filament part will approach or exceed conventionally manufactured counterparts. 1. An additive manufacturing process comprising:(a) selecting a polymer filament having a coating comprising a microwave absorbing nanomaterial;(b) fabricating a three-dimensional object from the polymer filament; and(c) irradiating the polymer filaments with microwaves during or after the step of fabricating the three-dimensional object.2. The process of claim 1 , wherein the microwave absorbing nanomaterial is selected from the group consisting of carbon nanotubes claim 1 , carbon black claim 1 , buckyballs claim 1 , graphene claim 1 , superparamagnetic nanoparticles claim 1 , magnetic nanoparticles claim 1 , metallic nanowires claim 1 , semiconducting nanowires claim 1 , quantum dots claim 1 , polyaniline (PANI) claim 1 , poly3 claim 1 ,4-ethylenedioxythiophene polystyrenesulfonate claim 1 , and combinations thereof.3. The process of claim 1 , wherein the microwave absorbing nanomaterial comprises carbon nanotubes.4. The process of claim 3 , wherein the carbon nanotubes are multi-walled carbon nanotubes.5. The process of claim 3 , wherein the coating has a thickness of between 0.005% and 30% of diameter of the polymer filament.6. The process of claim 3 , wherein the coating has a thickness between about 100 nm and 0.5 mm.7. The process of claim 3 , wherein the coating comprises between 1 wt % and 50 wt % of ...

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Номер записи: 1
16-08-2016 дата публикации

Detection of carbon nanotubes by microwave-induced heating

Номер: US0009417198B2
Автор: Micah J. Green, Fahmida Irin, Jaclyn Cañas, Mohammad Saed, GREEN MICAH J, IRIN FAHMIDA, CAÑAS JACLYN, SAED MOHAMMAD, Green Micah J., Irin Fahmida, Cañas Jaclyn, Saed Mohammad
Принадлежит: Texas Tech University System, UNIV TEXAS TECH SYSTEM

The present invention includes a method, systems and devices for the detection of carbon nanotubes in biological samples by providing a sample suspected of having one or more carbon nanotubes; irradiating the sample with a microwave radiation, wherein the carbon nanotubes absorb the microwave radiation; and detecting and measuring the one or more thermal emissions from the carbon nanotubes.

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Номер записи: 2
03-10-2013 дата публикации

Detection of Carbon Nanotubes by Microwave-Induced Heating

Номер: US20130259085A1
Автор: Fahmida Irin, Jaclyn Cañas, Micah J. Green, Mohammad Saed
Принадлежит: Texas Tech University System

The present invention includes a method, systems and devices for the detection of carbon nanotubes in biological samples by providing a sample suspected of having one or more carbon nanotubes; irradiating the sample with a microwave radiation, wherein the carbon nanotubes absorb the microwave radiation; and detecting and measuring the one or more thermal emissions from the carbon nanotubes.

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Номер записи: 3
09-01-2020 дата публикации

MICROWAVE-INDUCED LOCALIZED HEATING OF CNT FILLED POLYMER COMPOSITES FOR ENHANCED INTER-BEAD DIFFUSIVE BONDING OF FUSED FILAMENT FABRICATED PART

Номер: US20200009850A1
Автор: Green Micah J., Saed Mohammad, Sweeney Charles B.
Принадлежит: Texas Tech University System

A microwave-induced heating of CNT filled (or coated) polymer composites for enhancing inter-bead diffusive bonding of fused filament fabricated parts. The technique incorporates microwave absorbing nanomaterials (carbon nanotubes (CNTs)) onto the surface or throughout the volume of 3D printer polymer filament to increase the inter-bead bond strength following a post microwave irradiation treatment and/or in-situ focused microwave beam during printing. The overall strength of the final 3D printed part will be dramatically increased and the isotropic mechanical properties of fused filament part will approach or exceed conventionally manufactured counterparts. 135-. (canceled)36. A polymer composite , comprising:a polymer filament having an outer layer, wherein the outer layer comprises an electrically conductive percolated network of an electrically conductive nanomaterial.37. The polymer composite of claim 36 , wherein the polymer filament comprises at least one polymer selected from a group consisting of styrene (ABS) claim 36 , polycarbonate (PC) claim 36 , polylactic acid (PLA) claim 36 , polyethylene (PE) claim 36 , polycarbonate(PC)/styrene(ABS) claim 36 , polyphenylsulfone (PPSU) claim 36 , polyamide (nylon) claim 36 , polystyrene (PS) claim 36 , polyetherimide claim 36 , polyether ether ketone (PEEK) claim 36 , polytetrafluoroethylene (PTFE) claim 36 , and combinations thereof.38. The polymer composite of claim 36 , wherein the outer layer comprises a first polymer mixture of the electrically conductive nanomaterials and a polymer.39. The polymer composite of claim 36 , wherein the electrically conductive nanomaterial comprises carbon nanotubes.40. The polymer composite of claim 39 , wherein the carbon nanotubes are multi-walled carbon nanotubes.41. The polymer composite of claim 36 , wherein the outer layer has a thickness between 100 nm and 0.5 mm.42. The polymer composite of claim 36 , wherein the outer layer comprises between 1 wt % and 50 wt % of carbon ...

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Номер записи: 4
01-10-2015 дата публикации

Microwave-induced localized heating of carbon nanotubes filled polymer composites for enhanced inter-bead diffusive bonding of fused filament fabricated parts

Номер: WO2015147939A1
Автор: Charles B. SWEENEY, Micah J. Green, Mohammad Saed
Принадлежит: Texas Tech University System

A microwave-induced heating of CNT filled (or coated) polymer composites for enhancing inter-bead diffusive bonding of fused filament fabricated parts. The technique incorporates microwave absorbing nanomaterials (carbon nanotubes (CNTs)) onto the surface or throughout the volume of 3D printer polymer filament to increase the inter-bead bond strength following a post microwave irradiation treatment and/or in-situ focused microwave beam during printing. The overall strength of the final 3D printed part will be dramatically increased and the isotropic mechanical properties of fused filament part will approach or exceed conventionally manufactured counterparts.

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Номер записи: 5
08-02-2022 дата публикации

Microwave-induced local heating of cnt-filled polymer composite to enhance inner bead diffusion bonding of shaped article by thermally melted filament process

Номер: JP2022024061A
Автор: B Sweeney Charles, J Green Micah, Saed Mohammad, グリーン，ミカ・ジェイ, サエド，モハンマド, スウィーニー，チャールズ・ビー
Принадлежит: TEXAS A&M UNIVERSITY SYSTEM

【課題】従来の製造方式によるオブジェクト（射出成形、押出成形、機械加工などによって作られたオブジェクトなど）と比較して同一またはより優れた機械的特性を有するオブジェクトを3Dプリントを使用して作る方法を提供する。【解決手段】熱溶解フィラメント製法による造形品の内面ビード拡散接合を強化するためのCNT充填（または被覆）ポリマーコンポジットのマイクロ波誘導加熱であって、マイクロ波を吸収するナノ材料（カーボンナノチューブ（CNT））を3Dプリンター用ポリマーフィラメントの表面または体積全体に取り込み、マイクロ波照射処理後および／またはin-situでの集束マイクロ波照射後（プリント中）に内面ビード接合強度を高める。【選択図】図２９

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Номер записи: 6
04-10-2022 дата публикации

Microwave-induced localized heating of cnt filled polymer composites for enhanced inter-bead diffusive bonding of fused filament fabricated parts

Номер: CA2935221C
Автор: Charles B. SWEENEY, Micah J. Green, Mohammad Saed
Принадлежит: Texas Tech University System

A microwave-induced heating of CNT filled (or coated) polymer composites for enhancing inter-bead diffusive bonding of fused filament fabricated parts. The technique incorporates microwave absorbing nanomaterials (carbon nanotubes (CNTs)) onto the surface or throughout the volume of 3D printer polymer filament to increase the inter-bead bond strength following a post microwave irradiation treatment and/or in-situ focused microwave beam during printing. The overall strength of the final 3D printed part will be dramatically increased and the isotropic mechanical properties of fused filament part will approach or exceed conventionally manufactured counterparts.

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Номер записи: 7
05-11-2015 дата публикации

Microwave-induced localized heating of cnt filled polymer composites for enhanced inter-bead diffusive bonding of fused filament fabricated parts

Номер: WO2015130401A3
Автор: Charles B. SWEENEY, Micah J. Green, Mohammad Saed
Принадлежит: Texas Tech University System

A microwave-induced heating of CNT filled (or coated) polymer composites for enhancing inter-bead diffusive bonding of fused filament fabricated parts. The technique incorporates microwave absorbing nanomaterials (carbon nanotubes (CNTs)) onto the surface or throughout the volume of 3D printer polymer filament to increase the inter-bead bond strength following a post microwave irradiation treatment and/or in-situ focused microwave beam during printing. The overall strength of the final 3D printed part will be dramatically increased and the isotropic mechanical properties of fused filament part will approach or exceed conventionally manufactured counterparts.

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Номер записи: 8
30-01-2024 дата публикации

Reaaliaikainen visuaalinen synteettisten nostoköysien vaurion tunnistaminen

Номер: FI20225694A1
Автор: Heikki Mesiä, Juhani KEROVUORI, Kari Rintanen, Mohammad Al-Sa'd, Roope Mellanen, Sami Terho, Tuomas Jalonen
Принадлежит: Konecranes Global Oy

Menetelmä, laite ja järjestelmä synteettisen nostoköyden reaaliaikainen visuaalinen vaurioiden tunnistamismenetelmä, sisältäen sen, että kelataan (701) nosturilla synteettistä nostoköyttä sisään tai ulos; hankitaan (702) synteettisestä nostoköydestä valokuvakuvien virta, nosturilla sisään tai ulos kelaamisen aikana; ja tunnistetaan (703) vaurioita synteettisessä nostoköydessä käyttäen konvoluutiohermoverkkoa, joka on määritetty luokittelemaan saadut kuvat hyviksi tai ei hyviksi. Konvoluutiohermoverkon kouluttaminen sisältää sen, että kelataan (704) nosturilla synteettistä nostoköyttä sisään tai ulos vetorasituksessa; hankitaan (705) synteettisestä nostoköydestä valokuvakuvien virta nosturilla sisään tai ulos kelaamisen aikana vetorasituksessa; hankitaan (706) kaksi luokiteltua joukkoa, käsittäen ensimmäisen kuvajoukon, joissa synteettinen köysi on luokiteltu hyväksi luokitellun kuvasarjan, jossa synteettinen köysi on luokiteltu hyväksi, ja toisen kuvajoukon, jossa synteettinen köysi on luokiteltu ei hyväksi, jolloin synteettinen köysi luokitellaan vaurioituneeksi; esikäsitellään (707) kahden kuvajoukon kuvat; ja syötetään (708) esikäsitellyt kuvat konvoluutiohermoverkkoon.

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Номер записи: 9
09-12-2020 дата публикации

Semiconductor device with an encircled electrode

Номер: EP3748690A1
Автор: Mahmoud Shehab Mohammad Al-Sa'di, Tony Vanhoucke
Принадлежит: NXP BV

An embodiment of a semiconductor device includes a first semiconductor region formed within a semiconductor substrate, a second semiconductor region formed within the semiconductor substrate, a first electrode coupled to the first semiconductor region, a second electrode coupled to the second semiconductor region and proximate the first electrode, wherein the second electrode is encircled by the first electrode. A third electrode may be coupled to the first electrode and the second semiconductor region. A fourth electrode may be coupled to the first semiconductor region and proximate the third electrode, wherein the fourth electrode may be coupled to the second electrode, and wherein the third electrode includes a shared portion of the first electrode.

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Номер записи: 10
01-02-2024 дата публикации

Real-time visual damage detection of synthetic lifting ropes

Номер: WO2024023396A1
Автор: Heikki Mesiä, Juhani KEROVUORI, Kari Rintanen, Mohammad Al-Sa'd, Roope Mellanen, Sami Terho, Tuomas Jalonen
Принадлежит: Konecranes Global Oy

A method, apparatus, and system for real-time visual damage detection of a synthetic lifting rope, including winding (701) in or out a synthetic lifting rope by a crane; obtaining (702) a stream of photographic images of the rope while wound in or out by the crane; and detecting (703) damages in the rope using a convolution neural network CNN. Training of the CNN includes winding (704) in or out the rope under a tensile load; obtaining (705) a stream of photographic images of the rope while wound in or out under the tensile load; obtaining (706) two classified sets formed using the images comprising a first set of images classified as good, and a second set of images classified as not good; pre-processing (707) the images of the two sets; and feeding (708) the pre-processed images to the CNN.

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Номер записи: 11
17-01-2019 дата публикации

Semiconductor switch device and method

Номер: US20190019867A1
Автор: Ihor Brunets, Jan Willem Slotboom, Mahmoud Shehab Mohammad Al-Sa'di, Petrus Hubertus Cornelis Magnee, Tony Vanhoucke
Принадлежит: NXP BV

A semiconductor switch device and a method of making the same. The device includes a semiconductor substrate having a major surface. The device also includes a first semiconductor region located in the substrate beneath the major surface. The device includes an elongate gate located on the major surface. The device also includes a source region and a drain region located in the first semiconductor region adjacent respective first and second elongate edges of the gate. The device also includes electrical contacts for the source and drain regions. The contacts include at least two contacts located on either the source region or the drain region, which are spaced apart along a direction substantially parallel the elongate edges of the gate. The device further includes an isolation region located between the at least two contacts. The isolation region extends through the source/drain region from the major surface to the first semiconductor region.

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Номер записи: 12
10-12-2020 дата публикации

Semiconductor device with an encircled electrode

Номер: US20200388687A1
Автор: Mahmoud Shehab Mohammad Al-Sa'di, Tony Vanhoucke
Принадлежит: NXP BV

An embodiment of a semiconductor device includes a first semiconductor region formed within a semiconductor substrate, a second semiconductor region formed within the semiconductor substrate, a first electrode coupled to the first semiconductor region, a second electrode coupled to the second semiconductor region and proximate the first electrode, wherein the second electrode is encircled by the first electrode. A third electrode may be coupled to the first electrode and the second semiconductor region. A fourth electrode may be coupled to the first semiconductor region and proximate the third electrode, wherein the fourth electrode may be coupled to the second electrode, and wherein the third electrode includes a shared portion of the first electrode.

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Номер записи: 13
12-05-2022 дата публикации

Method for manufacturing power semiconductor device having split-gate structure

Номер: WO2022095162A1
Автор: Alessandro MONTAGNA, Junjie AN, Mahmoud Shehab Mohammad Al-Sa'di, Paolo ORGANTINI, Zhi He
Принадлежит: Wuxi Xichanweixin Semiconductor Ltd.

A method for manufacturing a power semiconductor device having a split-gate structure (36) provides: forming a single epitaxial layer or multiple epitaxial layers (23) on a substrate (22); forming a trench (26) through the epitaxial layer (23) extending from a top surface (23a) thereof in a vertical direction, transverse to the top surface (23a); filling the trench (26) with a dielectric region (27) and a conductive shield plate element (28'), the shield plate element (28') comprising an upper portion protruding from the underlying dielectric region (27) and a bottom potion extending vertically internally to the dielectric region (27); oxidizing the upper portion of the shield plate element (28') to form a separation region (31) in the trench (26) at the top surface (23a) of the epitaxial layer (23), a bottom portion of the shield plate element (28') defining a bottom part of the split-gate structure (36) of the power semiconductor device; forming a gate oxide region (30) on an inner surface of the trench (26), at an upper part of the same trench (26), above the dielectric region (27); forming top gate portions (34) of the split-gate structure (36), filling the trench (26) at the top surface (23a) of the epitaxial layer (23), laterally to the separation region (31). Before forming the gate-oxide region (30), the method provides forming a sacrificial oxide region (29) starting from the upper portion of the shield plate element (28') and subsequently etching the sacrificial oxide region (29).

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Номер записи: 14
27-12-2023 дата публикации

A product and method to test whoever loves more

Номер: GB2619980A
Автор: Al Sa'd Mohammad
Принадлежит: Funomenal Ltd

An artificial wishbone comprising a heart-shaped central part 1, and two arm-shaped parts 2 that extend from the central part. Each arm 2 has two ends, a narrower end segment 3 that connects the arm to the wall of the heart and a handle 4 that is used to pull the arm 2 apart from the heart 1. When the two arms are pulled apart the wishbone, a segment 3 on either side of the wishbone will snap to form two pieces, where one piece will be larger than the other. The wishbone may be used as part of a game where two players pull the wishbone apart, and the player with the bigger part is considered to be the one that loves the other person more. The wishbone may be made from a breakable material such as plastic, wood, paper, biscuit, chocolate or candy. Alternatively, the wishbone may be assembled from a single unit made of unbreakable material, and for an item of jewellery and denote a symbol of eternal love.

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Номер записи: 15
23-06-2021 дата публикации

Semiconductor devices with a mixed crystal region

Номер: EP3840058A1
Автор: Jan Willem Slotboom, Johannes Josephus Theodorus Marinus Donkers, Mahmoud Shehab Mohammad Al-Sa di, Tony Vanhoucke
Принадлежит: NXP BV

An embodiment of a semiconductor device may include a semiconductor substrate, a first semiconductor region comprising a first material with a first polarity formed within the semiconductor substrate and a second semiconductor region comprising the first material with a second polarity formed within the semiconductor substrate and coupled to the first semiconductor region. In an embodiment, a semiconductor device may also include a first electrode coupled to the first semiconductor region, a second electrode coupled to the second semiconductor region, and a depletion region formed between the first semiconductor region and the second semiconductor region. The depletion region may include a mixed crystal region that includes a mixed crystal alloy of the first material and a second material, wherein the mixed crystal region has a lower bandgap energy than a bandgap energy of the first material.

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Номер записи: 16
22-03-2021 дата публикации

Sağlikli, uzun ömürlü, gerçek tadi ve lezzeti̇ algilamamizi sağlayan, bi̇tki̇sel i̇çecekleri̇ bardaktan ve kupadan i̇çerken posasini süzen camdan pi̇pet süzgeç

Номер: TR202102820U5
Автор: Abdullah Alshagouri̇ Zeyd, Alshaghouri Abdulrahman, Mohammad Saed, Souqar Bashar
Принадлежит: Alshaghouri Abdulrahman, Mohammad Saed, Souqar Bashar, Zeyd Abdullah Alshagouri

SAĞLIKLI, UZUN ÖMÜRLÜ, GERÇEK TADI VE LEZZETİ ALGILAMAMIZI SAĞLAYAN, BİTKİSEL İÇECEKLERİ BARDAKTAN VE KUPADAN İÇERKEN POSASINI SÜZEN CAMDAN PİPET SÜZGEÇ Buluş, içecekle hiçbir zaman etkileşime girmeyen, çok kolay temizlenebilen, içilecek sıvıları içerisinden geçerken görülebilen, sağlıklı ve rahat kullanım sağlayabilen ve suyu sıcak tutması ve bitki çayını (yerba mate) içerken hoş bir tat vermesini sağlayan, sağlıklı, uzun ömürlü, gerçek tadı ve lezzeti algılamamızı sağlayan, bitkisel içecekleri bardaktan ve kupadan içerken posasını süzen camdan pipet süzgeç ile ilgilidir. Bu buluş sayesinde, yukarıda bahsedilen gereksinimleri karşılayan, tüm dezavantajları ortadan kaldıran ve ilave birçok avantajları beraberinde getirerek; yapmış olduğumuz cam pipet süzgeç, tamamen metal bir pipetin işini yaparken, içecekle hiçbir zaman etkileşime girmiyor ve çok kolay temizlenebilip içi her zaman görülebiliyor. Bu durum buluş konumuz olan cam pipetin sağlıklı ve rahat kullanımını sağlamaktadır. En önemlisi ise suyu sıcak tutması ve bitki çayı içerken hoş bir tat verilmesini sağlamasıdır. Buluşun amacı, %100 sağlıklı ve uzun süreli kullanımda içeceğin tadını hiç etkilemeden keyifle tüketilmesinin sağlanmasıdır. Buluşun diğer amacı, insanların soğuk ya da sıcak içecekler olması fark etmeksizin cam pipet olgusunun gerçek tadı korumak açısından daha iyi, sağlık yönünden daha güvenli ve ayrıca daha çevre dostu olmasıdır.

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Номер записи: 17
22-11-2018 дата публикации

Method of making a semiconductor switch device

Номер: US20180337250A1
Автор: Mahmoud Shehab Mohammad Al-Sa'di, Petrus Hubertus Cornelis Magnee
Принадлежит: NXP BV

A semiconductor switch device and a method of making the same. The method includes providing a semiconductor substrate having a major surface and a first semiconductor region having a first conductivity type. The method further includes implanting ions into the first semiconductor region through an opening in a mask positioned over the first semiconductor region, thereby to form a well region located in the first semiconductor region, the well region having a second conductivity type different to the first conductivity type. The method also includes depositing and patterning a gate electrode material on a gate dielectric to form a gate electrode located directly above the well region. The method further includes performing ion implantation to form a source region located in the well region on a first side of the gate, and to form a drain region located outside the well region on a second side of the gate.

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Номер записи: 18
14-02-2017 дата публикации

Bipolar transistor

Номер: US09570546B2
Автор: Dirk Klaassen, Mahmoud Shehab Mohammad Al-Sa'di, Petrus Hubertus Cornelis Magnee, Ponky Ivo, Tony Vanhoucke, Viet Thanh Dinh
Принадлежит: NXP BV

A semiconductor device comprising a bipolar transistor and a method of making the same. A power amplifier including a bipolar transistor. The bipolar transistor includes a collector including a laterally extending drift region. The also includes a base located above the collector. The bipolar transistor further includes an emitter located above the base. The bipolar transistor also includes a doped region having a conductivity type that is different to that of the collector. The doped region extends laterally beneath the collector to form a junction at a region of contact between the doped region and the collector. The doped region has a non-uniform lateral doping profile. A doping level of the doped region is highest in a part of the doped region closest to a collector-base junction of the bipolar transistor.

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Номер записи: 19