18-06-2015 дата публикации
Номер: US20150171203A1
In this GaN-based HFET, 2DEG (2-Dimensional Electron Gas) exclusion regions () in which no 2DEG is present are formed in the GaN-based multilayered body () under regions which are positioned lengthwise outer than imaginary lines (M1, M2) extended from lengthwise ends (A, B) of drain electrodes () in a widthwise direction orthogonal to the lengthwise direction and which are adjacent to source electrodes (), as well as in the GaN-based multilayered body () under regions which are lengthwise outwardly adjacent to the lengthwise ends (A, B) of the drain electrodes (). By the presence of the 2DEG exclusion region (), concentration of electron flows from end portions of the source electrodes () toward end portions of the drain electrodes () due to dynamic electric field variations on switching operations can be avoided. 1. A heterojunction field-effect transistor comprising:{'b': 5', '85', '205, 'a GaN-based multilayered body (, , ) having a heterojunction;'}{'b': 11', '91', '211', '5', '85', '205, 'a finger-like drain electrode (, , ) formed on the GaN-based multilayered body (, , );'}{'b': 12', '92', '212', '5', '85', '205', '11', '91', '211', '11', '91', '211', '12', '92', '212, 'a finger-like source electrode (, , ) formed on the GaN-based multilayered body (, , ) so as to neighbor the drain electrode (, , ) in a direction intersecting a lengthwise direction in which the drain electrode (, , ) extends, the source electrode (, , ) also extending in the lengthwise direction; and'}{'b': 33', '38', '93', '230', '11', '91', '211', '12', '92', '212, 'a gate electrode (, , , ) formed between the drain electrode (, , ) and the source electrode (, , ) as viewed in a plan view of the heterojunction field-effect transistor, wherein'}{'b': 31', '51', '111', '111', '151', '152', '260', '260, 'a 2DEG (2-Dimensional Electron Gas) exclusion region (, , , A, , , A, B) in which no 2DEG is present is formed in at least either one of{'b': 5', '85', '205', '11', '11', '91', '91', '211', ' ...
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