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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 8. Отображено 8.
21-04-2005 дата публикации

Method and system for the information protection of digital content

Номер: US20050086501A1
Автор: Je-Hak Woo, Hwan-Chul Lee, Sang-Young Cho, Seong-Ho Jeong, Young-Soo Ha, Seog-Kyoon Shin, Seong-II Kim
Принадлежит:

The present invention relates to the information protection of digital content transferred by streaming and download service through wire or wireless Internet network. The information protection system in this invention suggests a drastic prevention method of copyrights infringement such as illegal copy and unauthorized distribution of digital content, by using of the encryption, decryption, distribution, and authentication technologies. This invention suggests the control technology of general viewer program, not the specific viewer program for information protection, using a network filter driver for streaming and file system filter driver for download service. The main function of network and file system filter driver is the filtering operation such as a hooking, changing, decrypting, and restoring of message and data packet, and transferring to the viewer program. The main idea and technology of this invention suggest higher secure and efficient digital information protection system ...

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Номер записи: 1
13-06-2013 дата публикации

SEMICONDUCTOR DEVICE INCLUDING STEPPED GATE ELECTRODE AND FABRICATION METHOD THEREOF

Номер: US20130146944A1
Автор: Hyung Sup YOON, Byoung-Gue Min, Jong Min Lee, Seong-II Kim, Dong Min Kang, Ho Kyun Ahn, Jong-Won Lim, Jae Kyoung Mun, Eun Soo Nam
Принадлежит: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Disclosed are a semiconductor device including a stepped gate electrode and a method of fabricating the semiconductor device. The semiconductor device according to an exemplary embodiment of the present disclosure includes: a semiconductor substrate having a structure including a plurality of epitaxial layers and including an under-cut region formed in a part of a Schottky layer in an upper most part thereof; a cap layer, a first nitride layer and a second nitride layer sequentially formed on the semiconductor substrate to form a stepped gate insulating layer pattern; and a stepped gate electrode formed by depositing a heat-resistant metal through the gate insulating layer pattern, wherein the under-cut region includes an air-cavity formed between the gate electrode and the Schottky layer.

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Номер записи: 2
03-06-2010 дата публикации

HETEROJUNCTION BIPOLAR TRANSISTOR AND METHOD OF FORMING THE SAME

Номер: US20100133586A1
Автор: Byoung-Gue MIN, Jong-Min Lee, Seong-II Kim, Kyung-Ho Lee, Hyung-Sup Yoon, Eun-Soo Nam, MIN BYOUNG-GUE, LEE JONG-MIN, KIM SEONG-II, LEE KYUNG-HO, YOON HYUNG-SUP, NAM EUN-SOO
Принадлежит: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Provided are a heterojunction bipolar transistor and a method of forming the same. The method includes forming an emitter electrode on an emitter capping pattern, a base electrode on a base pattern, and a collector electrode on a subcollector pattern, the subcollector pattern, the base pattern, an emitter pattern, and the emitter capping pattern being provided to a substrate; patterning a protection insulation layer and a first dummy pattern covering the emitter electrode, the base electrode, and the collector electrode, to expose the emitter electrode, the base electrode, and the collector electrode; forming a second dummy pattern to electrically separate the emitter electrode, the base electrode, and the collector electrode; forming, on the substrate provided with the second dummy pattern, an emitter electrode interconnection connected to the emitter electrode, a base electrode interconnection connected to the base electrode, and a collector electrode interconnection connected to the collector electrode; and removing the first and second dummy patterns.

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Номер записи: 3
12-06-2014 дата публикации

TRANSISTOR AND METHOD OF FABRICATING THE SAME

Номер: US20140159115A1
Автор: Jong-Won LIM, Hokyun AHN, Woojin Chang, Dong Min Kang, Seong-II Kim, Sang-Heung Lee, Hyung Sup Yoon, Chull Won Ju, Hae Cheon Kim, Jae Kyoung Mun, Eun Soo Nam, LIM JONG-WON, AHN HOKYUN, CHANG WOOJIN, KANG DONG MIN, KIM SEONG-II, LEE SANG-HEUNG, YOON HYUNG SUP, JU CHULL WON, KIM HAE CHEON, MUN JAE KYOUNG, NAM EUN SOO
Принадлежит:

A high electron mobility transistor includes a T-type gate electrode disposed on a substrate between source and drain electrodes and insulating layers disposed between the substrate and the T-type gate electrode. The insulating layers include first, second, and third insulating layers. The third insulating layer is disposed between the substrate and a head portion of the T-type gate electrode such that a portion of the third insulating layer is in contact with a foot portion of the T-type gate electrode. The second insulating layer is disposed between the substrate and the head portion of the T-type gate electrode to be in contact with the third insulating layer. The first insulating layer and another portion of the third insulating layer are sequentially stacked between the substrate and the head portion of the T-type gate electrode to be in contact with the second insulating layer. 1. A high electron mobility transistor comprising:a source electrode and a drain electrode spaced apart from each other on a substrate;a T-type gate electrode disposed on the substrate between the source electrode and the drain electrode; anda plurality of insulating layers disposed between the substrate and the T-type gate electrode,wherein the plurality of insulating layers includes a first insulating layer, a second insulating layer, and a third insulating layer;wherein the third insulating layer is disposed between the substrate and a head portion of the T-type gate electrode such that a first portion of the third insulating layer is in contact with a foot portion of the T-type gate electrode;wherein the second insulating layer is disposed between the substrate and the head portion of the T-type gate electrode such that the second insulating layer is in contact with the third insulating layer; andwherein the first insulating layer and a second portion of the third insulating layer are sequentially stacked between the substrate and the head portion of the T-type gate electrode so as ...

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Номер записи: 4
23-12-2003 дата публикации

Alignment mark and exposure alignment system and method using the same

Номер: US0006667253B2
Автор: Won Song, Seong-II Kim, Sang-II Han, Chang-Hoon Lee, Choung-Hee Kim, SONG WON, KIM SEONG-II, HAN SANG-II, LEE CHANG-HOON, KIM CHOUNG-HEE
Принадлежит: Samsung Electronics Co., Ltd., SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO., LTD.

An alignment mark and an exposure alignment system and method using the alignment mark for aligning wafers are described. The alignment mark is formed of a plurality of mesa or trench type unit marks that are aligned in an inline pattern within an underlying layer under a layer to which a chemical mechanical polishing process is applied to form an alignment signal during an alignment process, thereby preventing a dishing phenomenon caused by the chemical mechanical process.

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Номер записи: 5
18-07-2002 дата публикации

Alignment mark and exposure alignment system and method using the same

Номер: US20020094679A1
Автор: Won Song, Seong-II Kim, Sang-II Han, Chang-Hoon Lee, Choung-Hee Kim
Принадлежит: Samsung Electronics Co., Ltd.

An alignment mark and an exposure alignment system and method using the alignment mark for aligning wafers are described. The alignment mark is formed of a plurality of mesa or trench type unit marks that are aligned in an inline pattern within an underlying layer under a layer to which a chemical mechanical polishing process is applied to form an alignment signal during an alignment process, thereby preventing a dishing phenomenon caused by the chemical mechanical process.

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Номер записи: 6
01-02-2018 дата публикации

METHOD AND ELECTRONIC DEVICE FOR PAYMNET USING BIOMETRIC AUTHENTICATION

Номер: US20180033013A1
Автор: CHO Jae Man, JANG Dong Ho, KIM In Ho, KIM Seong II, KIM Tae Yun, LEE Yong Wan, LEE You Na, OH Ji Su, OH Seung Won, PARK Yong Seok
Принадлежит:

An electronic device and a method of payment by the electronic device are provided. The electronic device includes a local wireless communication circuit, a first biometric sensor and a second biometric sensor, a security module configured to store payment information corresponding to a payment card, a processor electrically connected to the first biometric sensor, the second biometric sensor, the local wireless communication circuit, and the security module, and a memory electrically connected to the processor, wherein the memory is configured to store instructions that cause the processor to select at least one of the first biometric sensor or the second biometric sensor, based on a security policy of an issuer of the payment card or a security policy of the payment card, authenticate a user by using the selected biometric sensor, and if the authentication is successful, transmit the payment information to an external device through the local wireless communication circuit. 1. An electronic device , comprising:a local wireless communication circuit;a first biometric sensor and a second biometric sensor;a security module configured to store payment information corresponding to a payment card;a processor electrically connected to the first biometric sensor, the second biometric sensor, the local wireless communication circuit, and the security module; anda memory electrically connected to the processor,wherein the memory is configured to store instructions that cause the processor to:select at least one of the first biometric sensor or the second biometric sensor, based on a security policy of an issuer of the payment card or a security policy of the payment card;authenticate a user by using the selected biometric sensor; andif the authentication is successful, transmit the payment information to an external device through the local wireless communication circuit.2. The electronic device of claim 1 , wherein the local wireless communication circuit includes a ...

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Номер записи: 7
08-06-2010 дата публикации

Method for preparing ZnO nanocrystals directly on silicon substrate

Номер: US7732054B2
Автор: Chun Keun Kim, II Seong Kim, Woon Jo Cho, Yong Tae Kim, Young Hwan Kim
Принадлежит: Korea Advanced Institute of Science and Technology KAIST

A method for preparing a ZnO nanocrystal directly on a silicon substrate includes the steps of: (S 1 ) forming a Zn—Si—O composite thin film on the silicon substrate; and (S 2 ) thermally treating the obtained thin film. Particularly, ZnO nanocrystals are formed in an amorphous Zn—Si—O composite thin film by controlling the composition of the Zn—Si—O composite thin film and heating temperature thereof. With the present invention method for preparing a ZnO nanocrystal directly on a silicon substrate, more possibilities are opened up for the applications of ZnO nanocrystals to an optoelectronic device in use of a silicon substrate.

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Номер записи: 8