Salivary Protein Biomarkers for Human Oral Cancer

The present invention relates to the identification of novel oral cancer and periodontal disease biomarkers. Further, the present invention provides novel methods of diagnosing and for providing a prognosis for oral cancer and periodontal disease. The present invention additionally provides novel methods of distinguishing between oral cancer and periodontal disease. Finally, kits are provided that find use in the practice of the methods of the invention.

Hole-expanding device for skylight slide rails

The invention relates to the field of automotive skylight components and parts, and particularly relates to a hole-expanding device for skylight slide rails, and the device is capable of adjusting the positions of skylight slide rails of different types, thus ensuring that the skylight slide rails keep a concentric arrangement with the drill bit of a machining lathe. The hole-expanding device for skylight slide rails comprises a large carriage and a small carriage of an instrument car, wherein the large carriage and the small carriage of the instrument car are provided with a first location mechanism and a second location mechanism in the movement directions thereof respectively; a liftable floating plate is arranged on the small carriage of the instrument car; a support block for supporting the slide rails is arranged on the floating plate; adjusting mechanisms for controlling the lifting height of the floating plate are arranged at the both sides of the floating plate; and a hold-down ...

Longspan pipe truss pulling bar lifting and overhead rotating emplacing construction method

The invention discloses a longspan pipe truss pulling bar lifting and overhead rotating emplacing construction method which includes the following steps: 1), truss manufacturing and assembling, 2), pipe truss hoisting, 3), pulling bar moving, and 4), pulling bar removing. When a truss is assembled, an included angle of 30 degrees is formed between the truss and an installation positioning axis, the truss is lifted to exceed a concrete structure in height, and then rotated by 30 degrees to a design axis. The axis of the truss is rotated by 30 degrees to enable the truss to reach the position same as the position of the installation axis through the pulling bar erecting process, and therefore the pulling bar lifting and overhead rotating emplacing is achieved. The traditional single-foot pulling bar which is simple and flexible is adopted, in-place installation is achieved through pulley blocks, chain fall, winching and the like, an independent single-foot pulling bar can be adopted for hoisting ...

SEMICONDUCTOR FORMATION USING HYBRID OXIDATION

Methods, apparatuses, and systems related to forming a semiconductor using hybrid oxidation are described. An example method includes forming an opening to create an isolation region in a semiconductor substrate. The example method further includes depositing a first dielectric into the isolation region at a first oxidation rate. The example method further includes depositing a second dielectric into the isolation region at a second oxidation rate. 1. A method of forming semiconductor structures , comprising:forming an opening to create an isolation region in a semiconductor substrate;performing a first dielectric deposition at a first oxidation rate; andperforming a second dielectric deposition at a second oxidation rate.2. The method of claim 1 , further comprising performing the first dielectric deposition at an oxidation rate corresponding to a hydrogen to oxygen mixture with 18-33% hydrogen.3. The method of claim 2 , further comprising performing the second dielectric deposition at an oxidation rate corresponding to a hydrogen to oxygen mixture with 70-80% hydrogen.4. The method of claim 1 , further comprising forming an opening with a height range between 2 claim 1 ,000 and 3 claim 1 ,000 Angstroms.5. The method of claim 1 , wherein performing the first dielectric deposition comprises depositing a silicon oxide (SiO) material.6. The method of claim 1 , wherein performing the first dielectric deposition prior to the second dielectric deposition prevents erosion of an active area for the capacitor trench by a range of 0.5 nm to 2 nm.7. A method of forming semiconductor structures claim 1 , comprising:forming an opening to create an isolation region in a semiconductor substrate;patterning a first atomic layer deposition (ALD) at a first oxidation rate; andpatterning a second ALD at a second oxidation rate.8. The method of claim 7 , further comprising performing the first ALD and second ALD as a combined ALD cycle.9. The method of claim 7 , further comprising ...

Methods of forming an apparatus including device structures including pillar structures, and related memory devices, and electronic systems

A method of forming an apparatus comprises forming pillar structures extending from a base material. Upper portions of the pillar structures may exhibit a lateral width that is relatively greater than a lateral width of lower portions of the pillar structures. The method also comprises forming access lines laterally adjacent to the lower portions of the pillar structures and forming digit lines above upper surfaces of the pillar structures. Memory devices and electronic systems are also described.

APPARATUSES INCLUDING ELONGATE PILLARS OF ACCESS DEVICES

A method of forming an apparatus comprises forming pillar structures extending from a base material. Upper portions of the pillar structures may exhibit a lateral width that is relatively greater than a lateral width of lower portions of the pillar structures. The method also comprises forming access lines laterally adjacent to the lower portions of the pillar structures and forming digit lines above upper surfaces of the pillar structures. Memory devices and electronic systems are also described. 1. An apparatus , comprising:storage node structures; andelongate pillars of access devices operably coupled to the storage node structures, individual elongate pillars comprising storage node contact regions and a digit line contact region laterally between the storage node contact regions, upper portions of the elongate pillars comprising a cross-sectional area that is relatively greater than a cross-sectional area of lower portions thereof.2. The apparatus of claim 1 , further comprising storage node contacts between the storage node structures and the storage node contact regions of the elongate pillars claim 1 , wherein a lateral extent of the storage node contacts is greater than a lateral extent of the upper portions of the elongate pillars in at least one horizontal direction.3. The apparatus of claim 2 , wherein the storage node contacts are recessed within the upper portions of the elongate pillars claim 2 , and lowermost surfaces of the storage node contacts are above a transition between the upper portions of the elongate pillars and the lower portions thereof.4. The apparatus of claim 1 , wherein the storage node structures comprise capacitors claim 1 , at least some of the capacitors in vertical alignment with the elongate pillars of the access devices.5. The apparatus of claim 1 , wherein the elongate pillars exhibit an elongate lateral cross-sectional shape claim 1 , the storage node contact regions proximate opposing ends of the elongate pillars and the ...

SALIVARY PROTEIN BIOMARKERS FOR HUMAN ORAL CANCER

The present invention relates to the identification of novel oral cancer and periodontal disease biomarkers. Further, the present invention provides novel methods of diagnosing and for providing a prognosis for oral cancer and periodontal disease. The present invention additionally provides novel methods of distinguishing between oral cancer and periodontal disease. Finally, kits are provided that find use in the practice of the methods of the invention.

Semiconductor structure formation

An example method includes patterning a working surface of a semiconductor wafer. The example method includes performing a first deposition of a dielectric material in high aspect ratio trenches. The example method further includes performing a high pressure, high temperature vapor etch to recess the dielectric material in the trenches and performing a second deposition of the dielectric material to continue filling the trenches.

Salivary protein biomarkers for human oral cancer

The present invention relates to the identification of novel oral cancer and periodontal disease biomarkers. Further, the present invention provides novel methods of diagnosing and for providing a prognosis for oral cancer and periodontal disease. The present invention additionally provides novel methods of distinguishing between oral cancer and periodontal disease. Finally, kits are provided that find use in the practice of the methods of the invention.

Method and system for obtaining a deployment scheme of wireless local area network access points

A method for obtaining a deployment scheme of Wireless Local Area Network (WLAN) Access Points (APs) is provided. The method includes obtaining coverage information of each AP according to a WLAN competition model and deployment information; and combining a constraint relationship between the coverage information of each AP and cost information of each AP, and obtaining the deployment scheme of the APs through calculation. A device and a system are further provided, so as to automatically obtain a deployment scheme of APs, and control the cost.

Semiconductor structure formation

An example apparatus includes forming a working surface of a substrate material. The example apparatus includes trench formed between two semiconductor structures on the working surface of the substrate material. The example apparatus further includes access lines formed on neighboring sidewalls of the semiconductor structures opposing a channel region separating a first source/drain region and a second source/drain region. The example apparatus further includes a time-control formed inhibitor material formed over a portion of the sidewalls of the semiconductor structures. The example apparatus further includes a dielectric material formed over the semiconductor structures to enclose a non-solid space between the access lines.

SEMICONDUCTOR STRUCTURE FORMATION

Methods, apparatuses, and systems related to semiconductor structure formation are described. An example method includes forming an opening through silicon (Si) material, formed over a semiconductor substrate, to a first depth to form pillars of Si material. The example method further includes depositing an isolation material within the opening to fill the opening between the Si pillars. The example method further includes removing a portion of the isolation material from between the pillars to a second depth to create a second opening between the pillars and defining inner sidewalls between the pillars. The example method further includes depositing an enhancer material over a top surface of the pillars and along the inner sidewalls of the pillars down to a top portion of the isolation material. 1. A method , comprising:forming an opening through silicon (Si) material, formed over a semiconductor substrate, to a first depth to form pillars of Si material;depositing an isolation material within the opening to fill the opening between the Si pillars;removing a portion of the isolation material from between the pillars to a second depth to create a second opening between the pillars and defining inner sidewalls between the pillars; anddepositing an enhancer material over a top surface of the pillars and along the inner sidewalls of the pillars down to a top portion of the isolation material.2. The method of claim 1 , wherein the method further comprises: the top portion of the isolation material is positioned over top portions of the pillars,', 'the isolation material extends along outer sidewalls of the pillars from the top portion of the isolation material to the substrate material, and', 'the isolation material extends within the opening between the pillars along the inner sidewalls of the pillars from the top portion of the isolation material to a bottom portion of the opening., 'initially depositing the isolation material about the Si material having an initial ...

Apparatuses including elongate pillars of access devices

A method of forming an apparatus comprises forming pillar structures extending from a base material. Upper portions of the pillar structures may exhibit a lateral width that is relatively greater than a lateral width of lower portions of the pillar structures. The method also comprises forming access lines laterally adjacent to the lower portions of the pillar structures and forming digit lines above upper surfaces of the pillar structures. Memory devices and electronic systems are also described.

Semiconductor structure formation

Methods, apparatuses, and systems related to semiconductor structure formation are described. An example method includes forming an opening through silicon (Si) material, formed over a semiconductor substrate, to a first depth to form pillars of Si material. The example method further includes depositing an isolation material within the opening to fill the opening between the Si pillars. The example method further includes removing a portion of the isolation material from between the pillars to a second depth to create a second opening between the pillars and defining inner sidewalls between the pillars. The example method further includes depositing an enhancer material over a top surface of the pillars and along the inner sidewalls of the pillars down to a top portion of the isolation material.

Salivary protein biomarkers for human oral cancer

The present invention relates to the identification of novel oral cancer and periodontal disease biomarkers. Further, the present invention provides novel methods of diagnosing and for providing a prognosis for oral cancer and periodontal disease. The present invention additionally provides novel methods of distinguishing between oral cancer and periodontal disease. Finally, kits are provided that find use in the practice of the methods of the invention.

Quantitative grease distributing device

The invention discloses a quantitative grease distributing device which comprises a base, a support shaft, a motor support, a grease discharge pipe fixing plate, a grease charging pipe fixing plate, and a grease distributor. The support shaft and the motor support are fixed on the base. The grease discharge pipe fixing plate and the grease charging pipe fixing plate are fixed on the support shaft from top to bottom. The grease distributor is disposed between the grease discharge pipe fixing plate and the grease charging pipe fixing plate. The support shaft is further provided with a locking nut and a spring disposed between the locking nut and the grease charging pipe fixing plate. A speed regulating motor matching with the grease distributor is fixed on the motor support. By the quantitative grease distributing device, the technical problems in quantitative grease coating by separate production processes are solved. The quantitative grease distributing device has the advantages of low ...

METHODS OF FORMING AN APPARATUS INCLUDING DEVICE STRUCTURES INCLUDING PILLAR STRUCTURES, AND RELATED MEMORY DEVICES, AND ELECTRONIC SYSTEMS

A method of forming an apparatus comprises forming pillar structures extending from a base material. Upper portions of the pillar structures may exhibit a lateral width that is relatively greater than a lateral width of lower portions of the pillar structures. The method also comprises forming access lines laterally adjacent to the lower portions of the pillar structures and forming digit lines above upper surfaces of the pillar structures. Memory devices and electronic systems are also described.

SALIVARY BIOMARKERS FOR SJÖGREN'S SYNDROME

The present invention provides for the first time the identification of salivary protein and RNA factors that can be used in the detection of primary Sjögren's Syndrome. The present invention therefore provides methods of diagnosing and providing a prognosis for Sjögren's Syndrome, by examining relevant proteins (including certain autoantigens and autoantibodies) and RNA in a patient's saliva.

Salivary biomarkers for Sjögren's syndrome

The present invention provides for the first time the identification of salivary protein and RNA factors that can be used in the detection of primary Sjögren's Syndrome. The present invention therefore provides methods of diagnosing and providing a prognosis for Sjögren's Syndrome, by examining relevant proteins (including certain autoantigens and autoantibodies) and RNA in a patient's saliva.

Semiconductor structure formation

Methods, apparatuses, and systems related to semiconductor structure formation are described. An example method includes forming an opening through silicon (Si) material, formed over a semiconductor substrate, to a first depth to form pillars of Si material. The example method further includes depositing an isolation material within the opening to fill the opening between the Si pillars. The example method further includes removing a portion of the isolation material from between the pillars to a second depth to create a second opening between the pillars and defining inner sidewalls between the pillars. The example method further includes depositing an enhancer material over a top surface of the pillars and along the inner sidewalls of the pillars down to a top portion of the isolation material.

SEMICONDUCTOR STRUCTURE FORMATION

An example apparatus includes forming a working surface of a substrate material. The example apparatus includes trench formed between two semiconductor structures on the working surface of the substrate material. The example apparatus further includes access lines formed on neighboring sidewalls of the semiconductor structures opposing a channel region separating a first source/drain region and a second source/drain region. The example apparatus further includes a time-control formed inhibitor material formed over a portion of the sidewalls of the semiconductor structures. The example apparatus further includes a dielectric material formed over the semiconductor structures to enclose a non-solid space between the access lines.

Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells

A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Strings of memory cells comprise channel-material strings that extend through the insulative tiers and the conductive tiers in the memory blocks. A through-array-via (TAV) region comprises TAV constructions that extend through the insulative tiers and the conductive tiers. The TAV constructions individually comprise a radially-outer insulative lining and a conductive core radially-inward of the insulative lining. The insulative lining comprises a radially-inner insulative material and a radially-outer insulative material that are of different compositions relative one another. The radially-outer insulative material is in radially-outer recesses that are in the first tiers as compared to the second tiers. The radially-inner insulative material extends elevationally along the insulative tiers and the ...

SEMICONDUCTOR STRUCTURE FORMATION

Methods, apparatuses, and systems related to semiconductor structure formation are described. An example method includes forming an opening through silicon (Si) material, formed over a semiconductor substrate, to a first depth to form pillars of Si material. The example method further includes depositing an isolation material within the opening to fill the opening between the Si pillars. The example method further includes removing a portion of the isolation material from between the pillars to a second depth to create a second opening between the pillars and defining inner sidewalls between the pillars. The example method further includes depositing an enhancer material over a top surface of the pillars and along the inner sidewalls of the pillars down to a top portion of the isolation material. 1. A semiconductor structure , comprising:a silicon (Si) material formed on a semiconductor substrate;pillars formed within the Si material, the pillars having inner sidewalls forming an opening having a first depth within the Si material;an isolation material initially deposited within the opening to fill the opening between the pillars, wherein portions of the isolation material are subsequently removed from between the pillars to reduce the first depth of the opening to a second depth of the opening defined by the inner sidewalls between the pillars; andan enhancer material deposited to extend over a top surface of the pillars and along the inner sidewalls of the pillars to a top portion of the isolation material having the portions removed.2. The semiconductor structure of claim 1 , wherein the isolation material is initially deposited about the Si material having an initial height so that a top portion of the isolation material is positioned over top portions of the pillars claim 1 , extends along outer sidewalls of the pillars from the top portion of the isolation material to the semiconductor substrate claim 1 , and extends within the opening between the pillars ...

Manufacturing technology of monolayer capacitive touch screen and processing method of electronic device with touch screen

The invention discloses a manufacturing technology of a monolayer capacitive touch screen. The manufacturing technology includes the following steps that firstly, a glass substrate is provided; secondly, CNC preprocessing is performed on the glass substrate, and a terminal product shape contour groove is formed in one side of the glass substrate; thirdly, the glass substrate is strengthened; fourthly, surface processing is performed on the glass substrate; fifthly, an ITO conducting film is electroplated on the glass substrate; sixthly, an electrode pattern is manufactured on the ITO conducting film; seventhly, a conducting circuit is manufactured, and a circuit interface port is formed in one end of the glass substrate; eighthly, the glass substrate is cut; ninthly, CNC edging is performed; tenthly, an FPC is stuck to the circuit interface port of the glass substrate. According to the manufacturing technology of the monolayer capacitive touch screen and a processing method of an electronic ...

Welding construction method of large cast steel modes under low temperature condition

The invention discloses a welding construction method of large cast steel modes under a low temperature condition. The method comprises the following steps 1) welding materials are selected; 2) a windproof shed is set up in a welding operation area; 3) before welding, an end bevel and two sides of the end bevel are respectively and uniformly heated through an electric furnace plate within ranges of 300mm; 4) in the welding process, carbon arc air gouging elimination is carried out for spot welding fixedly and temporarily, and defects of cracks and the like are prevented from existing; 5) two welders are required to symmetrically weld tubular pillars and cast steel pieces to be in abutting joint along the circumference in partitions at the same time; and 6) after welding work is finished, urgency postheat measures are immediately carried out. The welding construction method is simple in technological process and convenient to operate, the cracks are not easily generated under the low temperature ...

SEMICONDUCTOR STRUCTURE FORMATION

An example method includes patterning a working surface of a semiconductor wafer. The example method includes performing a first deposition of a dielectric material in high aspect ratio trenches. The example method further includes performing a high pressure, high temperature vapor etch to recess the dielectric material in the trenches and performing a second deposition of the dielectric material to continue filling the trenches.

Three-motor rotary multi-stage speed regulating valve

The invention relates to a three-motor rotary multi-stage speed regulating valve, which is used for realizing multi-stage regulation for three-constant displacement motor device speed, and solving the problems that a variable motor is high in cost as well as a fault rate and the like. The three-motor rotary multi-stage speed regulating valve is integrated by a combination of a valve body, a direction controlling and embedding valve component, a shuttle valve component, an electromagnetic reversing valve component and a detachable damper, thus multiple functions of speed regulation of a rotary device are reached, and the valve has the advantages of design without a pipe, compact and reasonable structure, strong through-current capability, little pressure loss, convenience in regulation, low cost and the like. The valve is suitable for application and popularization in a three-motor rotary place.

Self adaption filtering method adopting noise statistic estimator

The invention discloses a self adaption filtering method adopting a noise statistic estimator and aims at solving the problems that the conventional Kalman filtering precision is lowered or is emanative under the condition that the statistic information of system noise and measurement noise is unknown or is changed along with the time. By aiming at the condition that the noise statistical character is known or is changed along with the time, firstly, a suboptimum maximum posterior noise statistic estimator is deduced on the basis of the maximum posterior estimation theory, then, an improved Kalman filter is obtained by utilizing a one-step optimal smoother, and finally, an unbiased suboptimum maximum posterior noise statistic estimator is obtained through unbiasedness inspection. Simulation results in a SINS/GPS (ship inertial navigation system/ global positioning system) combined navigation system show that the designed self adaption filter can accurately estimate the statistical information ...

Method and system for obtaining a deployment scheme of wireless local area network access points

A method for obtaining a deployment scheme of Wireless Local Area Network (WLAN) Access Points (APs) is provided. The method includes obtaining coverage information of each AP according to a WLAN competition model and deployment information; and combining a constraint relationship between the coverage information of each AP and cost information of each AP, and obtaining the deployment scheme of the APs through calculation. A device and a system are further provided, so as to automatically obtain a deployment scheme of APs, and control the cost.

Sun-chasing device

A sun-chasing device is provided, including a base, a first transmitter disposed on the base, a second transmitter, a support, a carrier pivotally connected to the support for carrying a solar module, a first supporting component pivotally connected to the first transmitter and the carrier, and a second supporting component pivotally connected to the second transmitter and the carrier. The sun-chasing device has great rigidity and carrying ability against strong wind, and has great precision and rotation angle, such that a solar plate can precisely aim at sun for long time and thus the efficiency of a solar module is significantly increased.

Driving system, apparatus and method for spindle motor

A driving method for a spindle motor and associated driving system and apparatus are provided. The driving method includes the following steps. Plural modulation signals and plural floating phases corresponding to the plural modulation signals are adjusted. A floating period comes immediately after an active period of each of the plural modulation signals according to the plural floating phases. During the floating period, a demagnetization time of the spindle motor is acquired according to a first terminal voltage signal at a first terminal of the spindle motor. If the demagnetization time is not smaller than the threshold time period, the step of adjusting the plural modulation signals is repeatedly done. Whereas, if the demagnetization time is smaller than the threshold time period, after the demagnetization time, a phase of the spindle motor is obtained according to the first terminal voltage signal.

SURGE-PROTECTION CIRCUIT AND SURGE-PROTECTION METHOD

A surge-protection circuit for a chip is provided. The surge-protection circuit includes a detection element and a protection element. The detection element is embedded on the chip and arranged between a first terminal and a second terminal, and the detection element is utilized to detect whether an abrupt voltage variation occurs due to a surge or not and generate an enabling signal when the abrupt voltage variation occurs. The protection element is embedded on the chip and coupled to the detection element, and the protection element is utilized to adjust and reduce the abrupt voltage variation through bypassing high energy generated by the surge after receiving the enabling signal. 1. A surge-protection circuit for a chip , comprising:a detection element, embedded on the chip and arranged between a first terminal and a second terminal, utilized to detect whether or not an abrupt voltage variation occurs due to a surge and to generate an enabling signal when the abrupt voltage variation occurs; anda protection element, embedded on the chip and coupled to the detection element, utilized to adjust and reduce the abrupt voltage variation by bypassing high energy generated by the surge after receiving the enabling signal.2. The surge-protection circuit as claimed in claim 1 , wherein the first terminal and the second terminal are transmission outputs of the chip.3. The surge-protection circuit as claimed in claim 1 , wherein the first terminal and the second terminal are a receiving input and a ground of the chip.4. The surge-protection circuit as claimed in claim 1 , wherein the detection element further comprises a differential pair composed of two P-type transistors claim 1 , sources of the two P-type transistors are coupled to the first terminal and the second terminal respectively claim 1 , and drains of the two P-type transistors are coupled together claim 1 , and gates of the two P-type transistors are biased to a pre-determined voltage claim 1 , and when the ...

Rendering a customized list of controls

Form controls can be reused so that the control can be bound to large volumes of data without adverse performance issues because of a large number of controls. A maximum number of rows of data N that can appear in a form are calculated. A container in memory is created for N+2 rows. The additional two rows are used to store the row after the last displayed row and the row previous to the first displayed row. In response to a user scroll or tab operation, rows within the container are reused. Child controls are hosted by the control and are also reused when the data is scrolled out of view.

Wireless transmission location-tracking device

Salivary protein biomarkers for human oral cancer

The present invention relates to the identification of novel oral cancer and periodontal disease biomarkers. Further, the present invention provides novel methods of diagnosing and for providing a prognosis for oral cancer and periodontal disease. The present invention additionally provides novel methods of distinguishing between oral cancer and periodontal disease. Finally, kits are provided that find use in the practice of the methods of the invention.

Surge-protection circuit and surge-protection method

Ani based routing

An ISP (10) provides enhanced features compatible with non-AIN switches to allow service providers to provide customers with features such as voice prompting, DTMF number collection, fax on demand and similar features. In one embodiment, the ISP can also be configured as an IP. Enhanced features can be accomplished using the ISP, such as advanced routing of long distance calls based on ANI, authorization codes, type of call, time of day, origination of call and destination of call.

Methods and compositions related to plod3

A solution to the problem of HNSCC identification and treatment are provided, embodiments described provide methods for identifying or treating HNSCC. In particular aspects, overexpression of procollagen-lysine, 2-oxoglutarate 5-dioxygenase 3 (PLODS) in HNSCC has been discovered and inhibition or down regulation of PLODS can treat HNSCC. In particular, inhibitory nucleic acids, such as siRNAs, are identified for down regulating PLODS expression.

光電部品

【課題】本発明は光電部品を提供する。【解決手段】光電部品はエピタキシャル積層、複数の辺縁、複数の第一の第一導電性電極、第三電極及び一つまたは複数の第四電極を含み、前記エピタキシャル積層は第一半導体層、前記第一半導体層上に形成される活性層、及び前記活性層上に形成される第二半導体層を含み、前記複数の辺縁は前記第一半導体層を露出させ、かつ前記複数の辺縁の隣接する２つの辺縁により前記第一半導体層の１つの隅部が形成され、前記複数の第一の第一導電性電極が前記複数の辺縁によって露出される前記第一半導体層上に形成され、前記複数の第一の第一導電性電極が互いに離れており、かつ第二半導体層に囲まれておらず、前記第三電極が前記複数の第一の第一導電性電極及び前記第二半導体層上に形成され、前記一つまたは複数の第四電極が前記第二半導体層上に形成される。【選択図】図４Ｃ

光電部品

【課題】本発明は光電部品を提供する。【解決手段】光電部品はエピタキシャル積層、複数の辺縁、複数の第一の第一導電性電極、第三電極及び一つまたは複数の第四電極を含み、前記エピタキシャル積層は第一半導体層、前記第一半導体層上に形成される活性層、及び前記活性層上に形成される第二半導体層を含み、前記複数の辺縁は前記第一半導体層を露出させ、かつ前記複数の辺縁の隣接する２つの辺縁により前記第一半導体層の１つの隅部が形成され、前記複数の第一の第一導電性電極が前記複数の辺縁によって露出される前記第一半導体層上に形成され、前記複数の第一の第一導電性電極が互いに離れており、かつ第二半導体層に囲まれておらず、前記第三電極が前記複数の第一の第一導電性電極及び前記第二半導体層上に形成され、前記一つまたは複数の第四電極が前記第二半導体層上に形成される。【選択図】図４Ｃ

一种便于采光通风气楼

本实用新型公开了一种便于采光通风气楼，包括通风口以及设置在通风口的基座，基座上设有横杆，横杆两端中部设有支撑钢板，支撑钢板的上端设有光板，支撑钢板两侧设有与基座连接的斜板，斜板上设有若干个相对应的活动窗，基座上设有若干个与活动窗相对应的转轴杆，转轴杆的两端设有丝杠螺纹，丝杠螺纹上设有丝杠套，丝杠套上设有撑杆，活动窗的下端设有活动座，撑杆通过活动座与活动窗活动连接，转轴杆的中部设有从动轮，基座的一侧设有电机，电机上设有转轴，转轴上设有主动轮，主动轮与从动轮通过皮带连接。本实用新型通过电机带动转轴杆的转动，使丝杠套实现相对或相向移动，以此完成活动窗的开启与关闭，无需人工，操作方便，省时省力。

Battery pack

Battery pack

A battery pack including cells, a circuit board, a first adapter strip, and a second adapter strip. Each of the cells includes tabs. The first adapter strip is connected to the tabs of two adjacent cells by welding. The second adapter strip is welded to the circuit board and connected to the first adapter strip by welding. The battery pack implements electrical connection to the tabs of the cells through the first adapter strip, and is electrically connected to the first adapter strip and the circuit board separately through the second adapter strip, to electrically connect the cells to the circuit board. The circuit board directly collects information on the tabs of each cell, without requiring structures like copper bars, transfer circuit board, and flexible printed circuit board.

Intelligent communications point platform

Battery pack

This application discloses a battery pack including cells, a circuit board, a first adapter strip, and a second adapter strip. Each of the cells includes tabs. The first adapter strip is connected to the tabs of two adjacent cells by welding. The second adapter strip is welded to the circuit board and connected to the first adapter strip by welding. The battery pack implements electrical connection to the tabs of the cells through the first adapter strip, and is electrically connected to the first adapter strip and the circuit board separately through the second adapter strip, to electrically connect the cells to the circuit board. The circuit board directly collects information on the tabs of each cell, without requiring structures like copper bars, transfer circuit board, and flexible printed circuit board required in the prior art, thereby reducing cost, simplifying the structure, and facilitating installation.

Air faucet made of composite material

Multi-functional radio frequency and the bar code controlled wrist type device for position tracking

Signaling in an intelligent network

A system and method for host signaling processing that allows multiple SS7 applications to have visibility to the SS7 network traffic 400 and the ability to control the SS7 network traffic 400. The applications residing on the platform have visibility to the SS7 traffic flowing through the Intelligent Communications Point (ICP) Platform 200, ability to control and modify the traffic and the ability to inject new SS7 traffic onto the SS7 links 14. The ICP platform 200 will provide basic services that applications can use including Logging Data, Process Events, Inter Process Communication Services, and an interface to the Intelligent Communications Manager 320 which provides a graphical user interface to manage the ICP 200. In addition to these services, the ICP Platform 200 will provide basic traffic metering and measurement, bookkeeping statistics, and a failsafe mechanism for the SS7 links 14.

Lectin arrays and translational applications

Systems comprising lectin-based arrays and mass spectrometry means and their use in the identification and detection of aberrant glycoproteins in cancer and cancer diagnosis are provided. The lectins of the arrays comprise members collectively cognate to galactosamine, N-acetyl-galactosamine, N-acetyl neuraminic acid, mannose, and O-glycosidically linked oligosaccharide (e.g., an array comprising PNA, ECL, and Jacalin) Glycoprotein biomarkers of cancer identified by use of the methods are also provided.

Rapid inflation and deflation apparatus

Adhesion-promoting compositions and methods of promoting adhesion between a coating and a substrate

[UNK]

Fixing flexible base for non-ballast railway track of confined type

Intelligent service peripheral/intelligent peripheral

A screw-fastening system

Intelligent service peripheral

An ISP provides enhanced features compatible with non-AIN switches to allow service providers to provide customers with features such as voice prompting, DTMF number collection, fax on demand and similar features. In one embodiment, the ISP can also be configured as an IP. Enhanced features can be accomplished using the ISP, such as advanced routing of long distance calls based on ANI, authorization codes, type of call, time of day, origination of call and destination of call.

Intelligente periphere diensteinheit

Driving system, apparatus and method for spindle motor

A driving method for a spindle motor and associated driving system and apparatus are provided. The driving method includes the following steps. Plural modulation signals and plural floating phases corresponding to the plural modulation signals are adjusted. A floating period comes immediately after an active period of each of the plural modulation signals according to the plural floating phases. During the floating period, a demagnetization time of the spindle motor is acquired according to a first terminal voltage signal at a first terminal of the spindle motor. If the demagnetization time is not smaller than the threshold time period, the step of adjusting the plural modulation signals is repeatedly done. Whereas, if the demagnetization time is smaller than the threshold time period, after the demagnetization time, a phase of the spindle motor is obtained according to the first terminal voltage signal.