Method for growing large-area graphene on insulating substrate

The invention discloses a method for growing large-area graphene on an insulating substrate. According to the method, a growing substrate is taken as an insulating material, a copper foil is taken as a catalyst and a carbon source, nitrogen and protective gas are taken as source gases, and the large-area graphene is grown on the insulating substrate by adopting a two-step (low-pressure growth and high-pressure growth) chemical vapor deposition method and using the short-range catalytic effect of the copper coil through face-to-face contact of the insulating substrate and the copper foil. The method disclosed by the invention is simple in operation of the whole process and low in cost; and the sample preparation is very high in repeatability and is less interfered by external world. The prepared single-layer graphene can be made into a large-area circuit device by using an exposure method without needing a complex transfer technology.