Epitaxial substrate, light-emitting diode, and methods for making the epitaxial substrate and the light-emitting diode

An epitaxial substrate includes: a base member; and a plurality of spaced apart light-transmissive members, each of which is formed on and tapers from an upper surface of the base member, and each of which is made of a light-transmissive material having a refractive index lower than that of the base member. A light-emitting diode having the epitaxial substrate, and methods for making the epitaxial substrate and the light-emitting diode are also disclosed.

Light-emitting diode including pit therein

A light-emitting diode (LED) and a method for manufacturing the same are described. The light-emitting diode has a first substrate. An illuminant epitaxial structure is deposited on a surface of the first substrate, in which the illuminant epitaxial structure has a first surface and a second surface opposite each other, the first surface is relatively adjacent to the first substrate, and the illuminant epitaxial structure includes at least one pit in the second surface. A second substrate is deposited on the second surface of the illuminant epitaxial structure. An adhesion layer is deposited between the second surface of the illuminant epitaxial structure and the second substrate to bond the second substrate to the illuminant epitaxial structure.

Light-emitting diode

A light-emitting diode (LED) is described. The light-emitting diode comprises a metal substrate, a reflective layer, a first transparent conductive layer, an illuminant epitaxial structure and a second transparent conductive layer stacked in sequence, and an electrode located on a portion of the second transparent conductive layer. A thickness of the metal substrate is between 30 mum and 150 mum. In addition, the light-emitting diode can further comprises a supporting substrate and an adhesive layer. The adhesive layer is located between the supporting substrate and the metal substrate to adhere the supporting substrate onto the metal substrate.

Light-emitting diode and method for manufacturing the same

A light-emitting diode (LED) and a method for manufacturing the same are described. The light-emitting diode comprises: a conductive substrate including a first surface and a second surface opposite to the first surface; a metal bonding layer deposed on the first surface of the conductive substrate; a reflective metal layer deposed on the metal bonding layer; an N-type semiconductor layer deposed on the reflective metal layer; an active layer deposed on the N-type semiconductor layer; a P-type semiconductor layer deposed on the active layer; a window layer deposed on the P-type semiconductor layer, wherein a thickness of the window layer is substantially at least 50 μm, and the window layer is composed of a transparent conductive material; and a P-type electrode deposed on the window layer.

LED device, flip-chip LED package and light reflecting structure

A light emitting diode (LED) device is provided. The LED device includes a device substrate, a first doped layer of a first conductivity type, a light emitting layer, a second doped layer of a second conductivity type, a transparent conductive oxide layer, a reflecting layer and two electrodes. The first doped layer is deposited on the device substrate, the light emitting layer is deposited on a portion of the first doped layer, and the second doped layer is deposited on the light emitting layer. The first and the second doped layers are comprised of III-V semiconductor material respectively. The transparent conductive oxide layer is deposited on the second doped layer, and the reflecting layer is deposited on the transparent conductive oxide layer. The two electrodes are deposited on the reflecting layer and the first doped layer respectively.

Photodetector

A photodetector is described. The photodetector is comprised of a substrate, a first n-type III-V compound semiconductor layer located on the substrate, an n⁺⁺-type III-V compound semiconductor layer located on a first portion of the first n-type III-V compound semiconductor layer with a second portion of the first n-type III-V compound semiconductor layer exposed, a p-type III-V compound semiconductor layer located on the n⁺⁺-type compound semiconductor layer, an undoped III-V compound semiconductor layer located on the p-type III-V compound semiconductor layer, a second n-type III-V compound semiconductor layer located on the undoped III-V compound semiconductor layer, a conductive transparent oxide layer located on the second n-type III-V compound semiconductor layer, a first electrode located on a portion of the conductive transparent oxide layer, and a second electrode located on a portion of the second portion of the first n-type III-V compound semiconductor ...

Photodetector

A photodetector is described. The photodetector is comprised of a substrate, a first n-type III-V compound semiconductor layer located on the substrate, an n++-type III-V compound semiconductor layer located on a first portion of the first n-type III-V compound semiconductor layer with a second portion of the first n-type III-V compound semiconductor layer exposed, a p-type III-V compound semiconductor layer located on the n++-type compound semiconductor layer, an undoped III-V compound semiconductor layer located on the p-type III-V compound semiconductor layer, a second n-type III-V compound semiconductor layer located on the undoped III-V compound semiconductor layer, a conductive transparent oxide layer located on the second n-type III-V compound semiconductor layer, a first electrode located on a portion of the conductive transparent oxide layer, and a second electrode located on a portion of the second portion of the first n-type III-V compound semiconductor layer.

Light-emitting diode package structure

A light-emitting diode package structure is provided. The light-emitting diode package comprises an insulating sub-mount, a first patterned conductive-reflective film, a second patterned conductive-reflective film and a light-emitting diode chip. The insulating sub-mount has a first surface and a cavity therein. The first and the second patterned conductive-reflective film are set over a portion of the first surface, a portion of the sidewalls of the cavity and a portion of the bottom surface of the cavity. The light-emitting diode chip is set up inside the cavity of the insulating sub-mount. The light-emitting diode has a pair of electrodes. The electrodes are electrically connected to the first and the second patterned conductive-reflective film respectively. Since the light-emitting diode structure of this invention incorporates the patterned conductive-reflective films, efficiency of the light-emitting diode is increased.

HIGH-VOLTAGE FLIP-CHIP LED STRUCTURE AND MANUFACTURING METHOD THEREOF

A high-voltage flip-chip LED structure and a manufacturing method thereof are disclosed. The manufacturing method includes: providing a die substrate, depositing a first passivation layer, forming a co-electrical-connecting layer, depositing a second passivation layer, depositing a mirror layer, forming two conductive tunnels by etching, and providing two connecting metal layers. The die substrate includes a sapphire substrate and multiple LED chips thereon. The fully transparent co-electrical-connecting layer, formed after formation of the first passivation layer, electrically connects the LED chips in series. The outer surface of the deposited second passivation layer is a flat passivation surface that enables the mirror layer thereon to be level and reflect light without optical path difference. The two connecting metal layers are provided for electrical conduction. The high-voltage flip-chip LED structure thus formed has fully transparent electrodes and can output light without optical path difference. 1. A manufacturing method of a high-voltage flip-chip light-emitting diode (LED) structure , comprising the steps of:providing a die substrate, wherein the die substrate comprises: a sapphire substrate, and a plurality of LED chips formed on the sapphire substrate and spaced from one another, each said LED chip being formed, from bottom to top, by an N-type layer, a quantum well layer, a P-type layer, and a transparent conductive oxide layer, each said N-type layer having an exposed N-type surface, the LED chips comprising a first LED chip and a second LED chip;depositing a first passivation layer on exposed surfaces of the LED chips;forming a co-electrical-connecting layer by: removing the first passivation layer on each said transparent conductive oxide layer and on each said N-type surface, and then forming a first electrical connecting layer on each said transparent conductive oxide layer, a second electrical connecting layer on each said N-type surface, and a ...

BUMPING PROCESS OF LIGHT EMITTING DIODE

A bumping process for a light emitting diode (LED) chip is provided. Firstly, a LED chip with a plurality of electrodes is provided, then a pattern plate having a plurality of openings is disposed on the LED chip, and the electrodes are correspondingly exposed by the openings. Then, a plurality of posts can be formed over the exposed electrodes by printing. After the printing process, the pattern plate is lifted and a reflow process is performed to the posts. The posts are formed by a printing process, the bumping process is less time-consuming and with lower costs and the height and the composition of the bumps con be precisely controlled, thus improving the reliability of LED die package structures.

LED PACKAGE STRUCTURE WITH TRANSPARENT ELECTRODES

The present invention discloses a LED package structure with transparent electrodes. The electrode layers the semiconductor layers inside the LED chip and the protection layer are all transparent to visible and invisible lights. With the adoption of the present invention, electrodes on the LED package no longer block any part of the light emission from inside the LED. 1. A light-emitting diode (LED) package structure with transparent electrodes , comprising:a growth substrate formed of an insulating heat-dissipating material and having a first surface and a second surface;a plurality of chip units formed on the first surface, each said chip unit comprising: a buffer layer grown on the first surface; an N-type semiconductor layer grown on the buffer layer, wherein the N-type semiconductor layer has a surface formed with a light-emitting layer growing area and an electrode connection area separate from the light-emitting layer growing area; a light-emitting layer grown on the light-emitting layer growing area; a P-type semiconductor layer grown on the light-emitting layer; and a transparent electrode layer formed on the P-type semiconductor layer; wherein each layer of the chip units are electrically conductive;a plurality of protective layers formed of a light-permeable conductive material, each said protective layer being formed on a periphery of a said chip unit and extending to an edge of a top surface of the chip unit, each said protective layer also extending to an edge of a said electrode connection area;a plurality of first connection layers formed of a light-permeable conductive material, each said first connection layer extending from a said transparent electrode layer to the first surface;a plurality of second connection layers formed of a light-permeable conductive material, each said second connection layer extending from a said electrode connection area to the first surface;a plurality of metal pads formed on said first connection layers and said second ...

Light-emitting diode package structure

A light-emitting diode package structure is provided. The light-emitting diode package comprises an insulating sub-mount, a first patterned conductive-reflective film, a second patterned conductive-reflective film and a light-emitting diode chip. The insulating sub-mount has a first surface and a cavity therein. The first and the second patterned conductive-reflective film are set over a portion of the first surface, a portion of the sidewalls of the cavity and a portion of the bottom surface of the cavity. The light-emitting diode chip is set up inside the cavity of the insulating sub-mount. The light-emitting diode has a pair of electrodes. The electrodes are electrically connected to the first and the second patterned conductive-reflective film respectively. Since the light-emitting diode structure of this invention incorporates the patterned conductive-reflective films, efficiency of the light-emitting diode is increased.

LIGHT-EMITTING DIODE DEVICE AND METHOD FOR FABRICATING THE SAME

A light-emitting diode device includes: a substrate including first and second conductors; a light-emitting diode die including first and second polarity sides, and a surrounding surface formed between the first and second polarity sides; an insulator disposed around the surrounding surface; a transparent conductive layer extending from the second polarity side of the light-emitting diode die oppositely of the substrate, along an outer surface of the insulator, and to the second conductor; and a reflecting cup formed on the substrate to define a space with the substrate. The light-emitting diode die, the insulator and the transparent conductive layer are disposed in the space. 1. A light-emitting diode device , comprising:a substrate including first and second conductors that are spaced apart from each other and that are adapted for connection to an external circuit;a light-emitting diode die disposed on said substrate and including first and second polarity sides that have opposite polarities, and a surrounding surface that is formed between said first and second polarity sides, said first polarity side being electrically connected to said first conductor;an insulator disposed around said surrounding surface of said light-emitting diode die;a transparent conductive layer extending from said second polarity side of said light-emitting diode die oppositely of said substrate, along an outer surface of said insulator, and to said second conductor, so that said second polarity side is electrically connected to said second conductor through said transparent conductive layer; anda reflecting cup formed on said substrate to define a space with said substrate, said light-emitting diode die, said insulator and said transparent conductive layer being disposed in said space.2. The light-emitting diode device of claim 1 , wherein said transparent conductive layer has a thickness not less than 200 nm.3. The light-emitting diode device of claim 1 , wherein said transparent ...

[FLIP CHIP LIGHT-EMITTING DIODE PACKAGE]

A flip chip light-emitting diode package comprising a Schottky diode group, a light-emitting diode and a plurality of bumps is provided. The Schottky diode group comprises a plurality of Schottky diodes electrically coupled in series or in parallel. The bumps are disposed between one of the Schottky diodes and the light-emitting diode so that the Schottky diode group and the light-emitting diode are connected reverse and in parallel. The light-emitting diode is disposed on one of the Schottky diodes and connected together by a flip-chip bonding process. The flip chip light-emitting diode package prevents damaging from electrostatic discharge and promotes light extraction efficiency. In addition, the submount of the Schottky diode is fabricated by using silicon material. Since silicon is an excellent material for heat dissipating, light extraction efficiency and reliability of the package is increased.

Bumping process of light emitting diode

A bumping process for a light emitting diode (LED) chip is provided. Firstly, a LED chip with a plurality of electrodes is provided, then a pattern plate having a plurality of openings is disposed on the LED chip, and the electrodes are correspondingly exposed by the openings. Then, a plurality of posts can be formed over the exposed electrodes by printing. After the printing process, the pattern plate is lifted and a reflow process is performed to the posts. The posts are formed by a printing process, the bumping process is less time-consuming and with lower costs and the height and the composition of the bumps con be precisely controlled, thus improving the reliability of LED die package structures.

CZTSe NANOINK COMPOSITION AND SPUTTERING TARGET THEREOF

The present invention provides a Cu 2 ZnSnSe 4 (CZTSe) nanoink composition and a CZTSe sputtering target thereof for use in manufacturing an absorption layer of a thin-film solar cell. The CZTSe sputtering target includes a binary multiphase mixture and/or a ternary multiphase mixture. The CZTSe nanoink composition not only includes the binary multiphase mixture and/or ternary multiphase mixture but also includes a chelating agent. Any two of Cu, Zn, Sn, and Se are combined by the chelating agent to form the binary multiphase mixture. Alternatively, any three of Cu, Zn, Sn, and Se are combined by the chelating agent to form the ternary multiphase mixture. By manufacturing the absorption layer of the thin-film solar cell in the aforesaid manner, the absorption layer has a perfect quaternary monophase structure but does not manifest any impure phase detrimental to photoelectric conversion efficiency.

Method for manufacturing a light-emitting diode

A method for manufacturing a light-emitting diode (LED) is disclosed. In the method, a substrate is firstly provided, in which a first conductivity type cladding layer, an active layer, a second conductivity type cladding layer, a superlattice contact layer and a transparent conductive oxide layer are stacked on the substrate in sequence. Next, an etching mask layer is formed on a portion of the transparent conductive oxide layer, in which the etching mask layer is an insulator. Then, a definition step is performed by using the etching mask layer to remove an exposed portion of the transparent conductive oxide layer, and the superlattice contact layer, the second conductivity type cladding layer and the active layer under the exposed portion of the transparent conductive oxide layer until the first conductivity type cladding layer is exposed. The etching mask layer is then removed. Subsequently, a first conductivity type electrode is formed on the exposed portion of the first conductivity ...

Method for manufacturing light-emitting diode

A method for manufacturing a light-emitting diode (LED) is described. The method comprises: providing a temporary substrate; forming an illuminant epitaxial structure on the temporary substrate; forming a first transparent conductive layer on the illuminant epitaxial structure; forming a metal substrate on the first transparent conductive layer; forming an adhesion layer on the metal substrate; providing a supporting substrate, wherein the supporting substrate is connected to the metal substrate by the adhesion layer; removing the temporary substrate, so as to expose a surface of the illuminant epitaxial structure; forming a second transparent conductive layer on the exexposed surface of the illuminant epitaxial structure; and forming an electrode on a portion of the second transparent conductive layer.

Epitaxial Substrate, Light-Emitting Diode, and Methods for Making the Epitaxial Substrate and the Light-Emitting Diode

An epitaxial substrate includes: a base member; and a plurality of spaced apart light-transmissive members, each of which is formed on and tapers from an upper surface of the base member, and each of which is made of light-transmissive material having a refractive index lower than that of the base member. A light-emitting diode having the epitaxial substrate, and methods for making the epitaxial substrate and the light-emitting diode are also disclosed.

LED structure

An LED structure includes a first substrate; an adhering layer formed on the first substrate; first ohmic contact layers formed on the adhering layer; epi-layers formed on the first ohmic contact layers; a first isolation layer covering the first ohmic contact layers and the epi-layers at exposed surfaces thereof; and first electrically conducting plates and second electrically conducting plates, both formed in the first isolation layer and electrically connected to the first ohmic contact layers and the epi-layers, respectively. The trenches allow the LED structure to facilitate complex serial/parallel connection so as to achieve easy and various applications of the LED structure in the form of single structures under a high-voltage environment.

Light-emitting diode structure with electrostatic discharge protection

A light-emitting diode (LED) structure with electrostatic discharge (ESD) protection is described. The LED includes a substrate, a patterned semiconductor layer, a first electrode and a second electrode. The patterned semiconductor layer is disposed over the substrate, and is divided into at least a first island structure and a second island structure. The first electrode and the second electrode are connected between the first island structure and the second island structure. A shunt diode is formed by the first electrode, the second electrode and the second island structure. The shunt diode is connected in parallel to the LED with an inverse voltage compared to the LED. In the LED structure of the invention, the first island structure and the second island structure are manufactured simultaneously by the epitaxy procedure. Therefore, the LED could be protected from damage due to electrostatic discharge (ESD).

LIGHT-EMITTING DIODE PACKAGE STRUCTURE

A light-emitting diode package structure is provided. The light-emitting diode package comprises an insulating sub-mount, a first patterned conductive-reflective film, a second patterned conductive-reflective film and a light-emitting diode chip. The insulating sub-mount has a first surface and a cavity therein. The first and the second patterned conductive-reflective film are set over a portion of the first surface, a portion of the sidewalls of the cavity and a portion of the bottom surface of the cavity. The light-emitting diode chip is set up inside the cavity of the insulating sub-mount. The light-emitting diode has a pair of electrodes. The electrodes are electrically connected to the first and the second patterned conductive-reflective film respectively. Since the light-emitting diode structure of this invention incorporates the patterned conductive-reflective films, efficiency of the light-emitting diode is increased.

LED Structure

An LED structure includes a first substrate; an adhering layer formed on the first substrate; first ohmic contact layers formed on the adhering layer; epi-layers formed on the first ohmic contact layers; a first isolation layer covering the first ohmic contact layers and the epi-layers at exposed surfaces thereof; and first electrically conducting plates and second electrically conducting plates, both formed in the first isolation layer and electrically connected to the first ohmic contact layers and the epi-layers, respectively. The first trenches or the second trenches allow the LED structure to facilitate complex serial/parallel connection so as to achieve easy and various applications of the LED structure in the form of single structures under a high-voltage environment.

Light-emitting diode and method for manufacturing the same

A light-emitting diode (LED) and a method for manufacturing the same are described. The light-emitting diode has a first substrate. An illuminant epitaxial structure is deposited on a surface of the first substrate, in which the illuminant epitaxial structure has a first surface and a second surface opposite each other, the first surface is relatively adjacent to the first substrate, and the illuminant epitaxial structure includes at least one pit in the second surface. A second substrate is deposited on the second surface of the illuminant epitaxial structure. An adhesion layer is deposited between the second surface of the illuminant epitaxial structure and the second substrate to bond the second substrate to the illuminant epitaxial structure.

Methods for Patterning an Epitaxial Substrate and Forming a Light-Emitting Diode with Nano-Patterns

A method for patterning an epitaxial substrate with nano-patterns, includes: forming a plurality of zinc oxide nano-particles on an epitaxial substrate; dry-etching the epitaxial substrate exposed from the zinc oxide nano-particles to form nano-patterns corresponding to the zinc oxide nano-particles; and removing the zinc oxide nano-particles on the epitaxial substrate. A method for forming a light-emitting diode having a patterned epitaxial substrate with the nano-patterns is also disclosed. 1. A method for patterning an epitaxial substrate comprising: (i) dipping the epitaxial substrate in a first solution that includes zinc ammonium complex ions such that the zinc ammonium complex ions are adsorbed on the epitaxial substrate;', '(ii) subjecting the zinc ammonium complex ions adsorbed on the epitaxial substrate to a hydrolysis reaction so as to form zinc hydroxide on the epitaxial substrate; and', '(iii) subjecting the zinc hydroxide on the epitaxial substrate to a dehydration reaction to form the zinc oxide nano-particles on the epitaxial substrate;, '(a) forming a plurality of zinc oxide nano-particles on an epitaxial substrate by the following substeps(b) dry-etching the epitaxial substrate exposed from the zinc oxide nano-particles to form nano-patterns corresponding to the zinc oxide nano-particles; and(c) removing the zinc oxide nano-particles on the epitaxial substrate.2. The method of claim 1 , wherein:the hydrolysis reaction is conducted by dipping the epitaxial substrate in water that has a temperature not greater than 35° C.; andthe dehydration reaction is conducted by dipping the epitaxial substrate in a second solution that includes water and that has a temperature not lower than 80° C.3. The method of claim 2 , wherein the first solution has a pH value not greater than 10 claim 2 , and a concentration of the zinc ammonium complex ions not less than 0.1 mol/L.4. The method of claim 2 , wherein the concentration of the zinc ammonium complex ions ranges ...

Light-emitting diode and method for manufacturing the same

A light-emitting diode (LED) and a method for manufacturing the same are described. The light-emitting diode has a metal substrate, a first transparent conductive layer, a first contact layer, and an illuminating epitaxial structure stacked in sequence. An ohmic contact layer is located on a portion of the illuminating epitaxial structure. A thickness of the metal substrate is greater than 40 μm. The first contact layer is a doped strained-layer-superlattices (SLS) structure. Additionally, the light-emitting diode can further be a reflective layer located between the metal substrate and the first transparent conductive layer.

Flip chip light-emitting diode package

A flip chip light-emitting diode package comprising a Schottky diode group, a light-emitting diode and a plurality of bumps is provided. The Schottky diode group comprises a plurality of Schottky diodes electrically coupled in series or in parallel. The bumps are disposed between one of the Schottky diodes and the light-emitting diode so that the Schottky diode group and the light-emitting diode are connected reverse and in parallel. The light-emitting diode is disposed on one of the Schottky diodes and connected together by a flip-chip bonding process. The flip chip light-emitting diode package prevents damaging from electrostatic discharge and promotes light extraction efficiency. In addition, the submount of the Schottky diode is fabricated by using silicon material. Since silicon is an excellent material for heat dissipating, light extraction efficiency and reliability of the package is increased.

Flip-chip light emitting diode package structure

A flip-chip LED package structure is disclosed. The flip-chip LED package structure includes a submount, patterned conductive films, a LED chip and two bumps. Several grooves are formed on the sidewalls of the submount. The patterned conductive films are formed on the grooves. The patterned conductive films extend from the grooves to parts of a top surface and a backside surface of the submount. The bumps are formed on two electrodes of the LED chip. The LED chip is disposed on the submount and connects electrically with the patterned conductive films via the bumps. The flip-chip LED package structure is disposed on a circuit board and connects electrically with the circuit without the wire bonding.

Light-emitting diode and method for making the same

A light-emitting diode includes: an epitaxial substrate including a base member, and a plurality of spaced apart first light-transmissive members; a light-emitting unit including a first-type semiconductor layer, a light-emitting layer, and a second-type semiconductor layer; and an electrode unit electrically connected to the light-emitting unit. The first-type semiconductor layer has a bottom film covering the first light-transmissive members, a plurality of spaced apart second light-transmissive members formed on a top face of the bottom film, and a top film formed on the bottom film to cover the second light-transmissive members.

Flip-chip light emitting diode package structure

A flip-chip LED package structure is disclosed. The flip-chip LED package structure includes a submount, patterned conductive films, a LED chip and two bumps. Several grooves are formed on the sidewalls of the submount. The patterned conductive films are formed on the grooves. The patterned conductive films extend from the grooves to parts of a top surface and a backside surface of the submount. The bumps are formed on two electrodes of the LED chip. The LED chip is disposed on the submount and connects electrically with the patterned conductive films via the bumps. The flip-chip LED package structure is disposed on a circuit board and connects electrically with the circuit without the wire bonding.

NANOINK FOR FORMING ABSORBER LAYER OF THIN FILM SOLAR CELL AND METHOD OF PRODUCING THE SAME

A nanoink composition for forming an absorber layer of a thin film solar cell comprises particles and a volatile chelating agent mixing with the particles. The particles contain one or more elements selected from group IB and/or IIB and/or IVA and/or VIA. In the present invention, the volatile chelating agent is a polyetheramine which can alternatively be monoamine compounds, diamine compounds and triamine compounds and has a molecular weight of from about 100 to about 4,000. Accordingly, the particles can be reacted mutually into a single composition while the existence of the volatile chelating agent.

Light-emitting diode

A light-emitting diode (LED) is described. The light-emitting diode comprises a metal substrate, a reflective layer, a first transparent conductive layer, an illuminant epitaxial structure and a second transparent conductive layer stacked in sequence, and an electrode located on a portion of the second transparent conductive layer. A thickness of the metal substrate is between 30 μm and 150 μm. In addition, the light-emitting diode can further comprises a supporting substrate and an adhesive layer. The adhesive layer is located between the supporting substrate and the metal substrate to adhere the supporting substrate onto the metal substrate.

BUMPING PROCESS OF LIGHT EMITTING DIODE

A bumping process for a light emitting diode (LED) chip is provided. Firstly, a LED chip with a plurality of electrodes is provided, then a pattern plate having a plurality of openings is disposed on the LED chip, and the electrodes are correspondingly exposed by the openings. Then, a plurality of posts can be formed over the exposed electrodes by printing. After the printing process, the pattern plate is lifted and a reflow process is performed to the posts. The posts are formed by a printing process, the bumping process is less time-consuming and with lower costs and the height and the composition of the bumps can be precisely controlled, thus improving the reliability of LED die package structures.

Method for manufacturing light-emitting diode

A method for manufacturing a light-emitting diode (LED) is described. The method comprises: providing a temporary substrate; forming an illuminant epitaxial structure on the temporary substrate; forming a first transparent conductive layer on the illuminant epitaxial structure; forming a metal substrate on the first transparent conductive layer; forming an adhesion layer on the metal substrate; providing a supporting substrate, wherein the supporting substrate is connected to the metal substrate by the adhesion layer; removing the temporary substrate, so as to expose a surface of the illuminant epitaxial structure; forming a second transparent conductive layer on the exposed surface of the illuminant epitaxial structure; and forming an electrode on a portion of the second transparent conductive layer.

Methods for patterning an epitaxial substrate and forming a light-emitting diode with nano-patterns

A method for patterning an epitaxial substrate with nano-patterns, includes: forming a plurality of zinc oxide nano-particles on an epitaxial substrate; dry-etching the epitaxial substrate exposed from the zinc oxide nano-particles to form nano-patterns corresponding to the zinc oxide nano-particles; and removing the zinc oxide nano-particles on the epitaxial substrate. A method for forming a light-emitting diode having a patterned epitaxial substrate with the nano-patterns is also disclosed.

LIGHT-EMITTING DIODE STRUCTURE WITH ELECTROSTATIC DISCHARGE PROTECTION

A light-emitting diode (LED) structure with electrostatic discharge (ESD) protection is described. The LED includes a substrate, a patterned semiconductor layer, a first electrode and a second electrode. The patterned semiconductor layer is disposed over the substrate, and is divided into at least a first island structure and a second island structure. The first electrode and the second electrode are connected between the first island structure and the second island structure. A shunt diode is formed by the first electrode, the second electrode and the second island structure. The shunt diode is connected in parallel to the LED with an inverse voltage compared to the LED. In the LED structure of the invention, the first island structure and the second island structure are manufactured simultaneously by the epitaxy procedure. Therefore, the LED could be protected from damage due to electrostatic discharge (ESD).

Light-emitting diode

A light-emitting diode (LED) and a method for manufacturing the same are described. The light-emitting diode has a metal substrate, a first transparent conductive layer, a first contact layer, and an illuminating epitaxial structure stacked in sequence. An ohmic contact layer is located on a portion of the illuminating epitaxial structure. A thickness of the metal substrate is greater than 40 mum. The first contact layer is a doped strained-layer-superlattices (SLS) structure. Additionally, the light-emitting diode can further be a reflective layer located between the metal substrate and the first transparent conductive layer.

PHOTO DETECTOR PACKAGE

A photo detector package is provided. The photo detector package includes a carrier, a photo sensor and a calibration module. The photo sensor having an active surface is disposed on the carrier. The calibration module is disposed on the carrier. The calibration module is electrically connected to the photo sensor. Moreover, the photo detector package described above can precisely detect the intensity of a light source (radiation) to be measured.

[WHITE LIGHT LED]

A white light LED is provided. The white light LED includes an exciting light source and a fluorescent powder, wherein the wavelength of the light emitting from the exciting light source is in a range of about 250 nm to about 490 nmt. The fluorescent powder is disposed around the exciting light source to receive the light emitting from the exciting light source. Furthermore, the material of the fluorescent powder includes (Tb 3-x-y Ce x Re y )Al 5 O 12 , (Me 1-x-y Eu x Re y ) 3 SiO 5 , YBO 3 :Ce 3+ , YBO 3 :Tb 3+ , SrGa 2 O 4 :Eu 2+ , SrAl 2 O 4 :Eu 2+ , (Ba,Sr)MgAl 10 :Eu 2+ , Mn 2+ , Y 2 O 3 :Eu 3+ , Y 2 O 3 :Bi 3+ , (Y,Gd) 2 O 3 :Eu 3+ , (Y,Gd) 2 O 3 :Bi 3+ , Y 2 O 2 S:Eu 3+ , Y 2 O 2 S:Bi 3+ , (Me 1-x Eu x )ReS, 6MgO,As 2 O 5 :Mn, Mg 3 SiO 4 :Mn, BaMgAl 10 O 17 :Eu 2+ and (Ca,Sr,Ba) 5 (PO 4 ) 3 Cl:Eu 2+ ,Gd 3+ . The white light LED of the invention provides high luminous efficiency and excellent color rendering index.

LIGHT-EMITTING DIODE AND METHOD FOR MAKING THE SAME

A light-emitting diode includes: an epitaxial substrate including a base member, and a plurality of spaced apart first light-transmissive members; a light-emitting unit including a first-type semiconductor layer, a light-emitting layer, and a second-type semiconductor layer; and an electrode unit electrically connected to the light-emitting unit. The first-type semiconductor layer has a bottom film covering the first light-transmissive members, a plurality of spaced apart second light-transmissive members formed on a top face of the bottom film, and a top film formed on the bottom film to cover the second light-transmissive members. 1. A light-emitting diode , comprising:an epitaxial substrate including a base member, and a plurality of spaced apart first light-transmissive members each of which is formed on and tapers from an upper surface of said base member, and each of which is made of a first light-transmissive material having a refractive index lower than that of said base member;a light-emitting unit including a first-type semiconductor layer that is formed on said epitaxial substrate, a light-emitting layer that is formed on said first-type semiconductor layer opposite to said epitaxial substrate, and a second-type semiconductor layer that is formed on said light-emitting layer opposite to said first-type semiconductor layer; andan electrode unit electrically connected to said light-emitting unit;wherein said first-type semiconductor layer has a bottom film covering said first light-transmissive members, a plurality of spaced apart second light-transmissive members formed on a top face of said bottom film, and a top film formed on said bottom film to cover said second light-transmissive members; andwherein each of said second light-transmissive members tapers from said top face of said bottom film, and is made of a second light-transmissive material having a refractive index different from that of said bottom and top films.2. The light-emitting diode of ...

LIGHT-EMITTING DIODE STRUCTURE

A light-emitting diode structure includes first and second conductors, and a light-emitting diode unit. The light-emitting diode unit includes: a light-emitting diode die including first and second polarity sides, and a surrounding surface, the first polarity side being electrically connected to the first conductor; an insulator disposed around the surrounding surface; and a transparent conductive film extending from the second polarity side, along an outer surface of the insulator, and to the second conductor, so that the second polarity side is electrically connected to the second conductor through the transparent conductive film. 1. A light-emitting diode structure , comprising:a substrate including first and second conductors that are spaced apart from each other and that are adapted for connection to an external circuit; and a light-emitting diode die disposed on said substrate and including first and second polarity sides that have opposite polarities, and a surrounding surface that is formed between said first and second polarity sides, said first polarity side being electrically connected to said first conductor;', 'an insulator disposed around said surrounding surface of said light-emitting diode die; and', 'a transparent conductive film extending from said second polarity side of said light-emitting diode die oppositely of said substrate, along an outer surface of said insulator, and to said second conductor, so that said second polarity side of said light-emitting diode die is electrically connected to said second conductor through said transparent conductive film, said surrounding surface of said light-emitting diode die being spaced apart from said transparent conductive film by said insulator., 'a light-emitting diode unit including2. The light-emitting diode structure of claim 1 , wherein said light-emitting diode unit further includes an electrode layer that is disposed between said light-emitting diode die and said substrate claim 1 , and that is ...

Method for manufacturing lighe-emitting diode

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Light-emitting diode

Light-emitting diode and method for manufacturing the same

Flip chip type- light emitting diode package

半導體元件層及其製造方法

一種半導體元件層的製造方法。首先，於一基板上形成一圖案化罩幕層，其中圖案化罩幕層具有一開口，以暴露部分的基板。接著，於未被圖案化罩幕層所覆蓋的基板上形成一半導體元件層，其中位於開口以外的半導體元件層在不同高度具有不同的截面積，且位於開口以外的半導體元件層的截面積隨著所在高度的增加而遞減。然後，移除圖案化罩幕層。

Alternating current driven light emitting diode module

具全透明電極之ｌｅｄ封裝體結構

本發明為一種具全透明電極之LED封裝體結構，其為電極層與保護層皆為透光材質之具全透明電極之LED封裝體結構，並具有一成長基板、複數個晶片單元、複數個透光之保護層、複數個透光之第一連接層、複數個透光之第二連接層、複數個金屬墊、及一反射層，藉由本發明之實施可使LED之出光可以不受必須具備之電極與做為LED間電性連接之連接層之阻擋，達到更完美的出光效果。

具多層透明電極之ｌｅｄ封裝體結構

本發明為一種具多層透明電極之LED封裝體結構，其為電極層與保護層皆為透光材質之具多層透明電極之LED封裝體結構。本發明之一種具多層透明電極之LED封裝體結構，其具有一基板、第一導電層、第二導電層、透光之保護層、與做為電性連接之一透光之連接電極層。本發明的實施可使LED之出光可以不受必須具備之電極與電性連接層之阻擋，達到更完美的出光效果。

Light emitting diode chip and method for fabricating the same

Light emitting diode chip and fabricating method thereof

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Light emitting diode chip and method for fabricating the same

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Light emitting diode chip and fabrication method thereof

Light emitting diode chip and fabrication method thereof