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Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 17. Отображено 16.
15-03-2012 дата публикации

FRONT REFERENCED ANODE

Номер: US20120061246A1
Автор: Feng Jingbin, Ghongadi Shantinath, HE Zhian, Stowell R. Marshall, WILMOT Frederick Dean
Принадлежит:

Apparatus and methods for electroplating are described. Apparatus described herein include anode supports including positioning mechanisms that maintain a consistent distance between the surface of the wafer and the surface of a consumable anode during plating. Greater uniformity control is achieved. 1. An electroplating apparatus , comprising:(a) a work piece holder for holding a work piece in place during electroplating; and(b) an anode support comprising an anode positioning mechanism for adjusting the position of a consumable anode to provide a consistent distance between the consumable anode and the work piece over a period of time during which the consumable anode is consumed.2. The apparatus of claim 1 , wherein the work piece holder is configured to hold a semiconductor wafer.3. The apparatus of claim 2 , further comprising the consumable anode claim 2 , wherein the consumable anode comprises a substantially planar surface that is substantially parallel to the plating surface of the semiconductor wafer during plating.4. The apparatus of claim 3 , wherein the substantially planar surface is at least co-extensive with the plating surface of the semiconductor wafer.5. The apparatus of claim 1 , wherein the consumable anode comprises two or more sections that claim 1 , when registered with each other claim 1 , form a disk-shaped anode.6. The apparatus of claim 5 , wherein the consumable anode comprises four circular sectors having equivalent central angles.7. The apparatus of claim 1 , wherein the anode positioning mechanism comprises:(i) a support plate, for supporting the consumable anode; and(ii) a drive component, configured to apply upward force to the support plate sufficient to raise the anode.8. The apparatus of claim 7 , wherein the drive component comprises one or more springs that are compressed between the support plate and a bottom region of a plating chamber and/or a base plate configured to lie in the bottom region of the plating chamber.9. The ...

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Номер записи: 1
31-10-2013 дата публикации

METHOD AND APPARATUS FOR ELECTROPLATING SEMICONDUCTOR WAFER WHEN CONTROLLING CATIONS IN ELECTROLYTE

Номер: US20130284604A1
Автор: Brogan Lee, Duncan James E., Fu Haiying, Ghongadi Shantinath, Huang Ludan, Lee Hyosang S., Mayer Steven T., Merrill Charles L., PORTER David W., REID Jonathan D., Spurlin Tighe A., Stowell Marshall R., Thorum Matthew, Willey Mark J., WILMOT Frederick D.
Принадлежит:

Apparatus and methods for electroplating metal onto substrates are disclosed. The electroplating apparatus comprise an electroplating cell and at least one oxidization device. The electroplating cell comprises a cathode chamber and an anode chamber separated by a porous barrier that allows metal cations to pass through but prevents organic particles from crossing. The oxidation device (ODD) is configured to oxidize cations of the metal to be electroplated onto the substrate, which cations are present in the anolyte during electroplating. In some embodiments, the ODD is implemented as a carbon anode that removes Cu(I) from the anolyte electrochemically. In other embodiments, the ODD is implemented as an oxygenation device (OGD) or an impressed current cathodic protection anode (ICCP anode), both of which increase oxygen concentration in anolyte solutions. Methods for efficient electroplating are also disclosed. 1. An apparatus for electroplating a metal onto a substrate , the apparatus comprising: a cathode chamber for containing catholyte during electroplating;', 'a cathode electrical connection in the cathode chamber, the cathode electrical connection being able to connect to the substrate and apply a potential allowing the substrate to become a cathode;', 'an anode chamber for containing anolyte during electroplating;', 'an anode electrical connection in the anode chamber, the anode electrical connection being able to connect to an electroplating anode and apply a potential to the electroplating anode; and', 'a porous transport barrier placed between the anode chamber and the cathode chamber, which transport barrier enables migration of ionic species in an electrolyte, including metal cations, across the transport barrier while substantially preventing organic additives from passing across the transport barrier; and, '(a) an electroplating cell comprising(b) at least one oxidation device (ODD) configured to oxidize cations of the metal to be electroplated onto the ...

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Номер записи: 2
10-04-2014 дата публикации

ELECTROFILL VACUUM PLATING CELL

Номер: US20140097088A1
Автор: Feng Jingbin, PORTER David W., Stowell R. Marshall
Принадлежит: NOVELLUS SYSTEMS, INC.

The disclosed embodiments relate to methods and apparatus for immersing a substrate in electrolyte in an electroplating cell under sub-atmospheric conditions to reduce or eliminate the formation/trapping of bubbles as the substrate is immersed. Various electrolyte recirculation loops are disclosed to provide electrolyte to the plating cell. The recirculation loops may include pumps, degassers, sensors, valves, etc. The disclosed embodiments allow a substrate to be immersed quickly, greatly reducing the issues related to bubble formation and uneven plating times during electroplating. 1. A method of electroplating metal onto a substrate , comprising:flowing electrolyte through a plating recirculation loop comprising an electrolyte reservoir, a pump, an electroplating cell, and a degasser that degasses the electrolyte prior to its introduction to the electroplating cell;immersing the substrate in electrolyte in an electroplating cell, wherein the pressure in the electroplating cell during immersion is about 100 Torr or less;electroplating material onto the substrate; andremoving the substrate from electrolyte.2. The method of claim 1 , wherein the pressure in the electroplating cell during immersion is at least about 20 Torr.3. The method of claim 1 , wherein immersing the substrate in electrolyte occurs over a period of about 225 ms or less claim 1 , and wherein the substrate has a diameter of about 150 mm or greater.4. The method of claim 3 , wherein immersing the substrate in electrolyte occurs over a period of about 50 ms or less claim 3 , and wherein the substrate has a diameter of about 150 mm or greater.5. The method of claim 1 , wherein immersing the substrate in electrolyte occurs over a period having a first duration claim 1 , and electroplating material to fill a feature on the substrate occurs over a period having a second duration claim 1 , and wherein the first duration is about 10% or less of the second duration.6. The method of claim 5 , wherein the ...

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Номер записи: 3
30-07-2015 дата публикации

Front referenced anode

Номер: US20150211144A1
Автор: Frederick Dean Wilmot, Jingbin Feng, R. Marshall Stowell, Shantinath Ghongadi, Zhian He
Принадлежит: Novellus Systems Inc

Apparatus and methods for electroplating are described. Apparatus described herein include anode supports including positioning mechanisms that maintain a consistent distance between the surface of the wafer and the surface of a consumable anode during plating. Greater uniformity control is achieved.

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Номер записи: 4
06-08-2015 дата публикации

TEMPERATURE CONTROLLED SHOWERHEAD FOR HIGH TEMPERATURE OPERATIONS

Номер: US20150218701A1
Автор: Bartlett Christopher M., Henri Jon, Li Ming, SABRI Mohammed, Stowell Marshall R.
Принадлежит:

A temperature controlled showerhead assembly for chemical vapor deposition (CVD) chambers enhances heat dissipation to provide accurate temperature control of the showerhead face plate and maintain temperatures substantially lower than surrounding components. Heat dissipates by conduction through a showerhead stem and removed by the heat exchanger mounted outside of the vacuum environment. Heat is supplied by a heating element inserted into the steam of the showerhead. 1. A temperature controlled showerhead assembly comprising:a heat conductive stem;a back plate attached to the heat conductive stem;a face plate thermally coupled to the heat conductive stem and attached to the back plate;a heat exchanger thermally coupled to the heat conductive stem;a temperature sensor thermally coupled to the face plate; anda first opening extending through the heat conductive stem and the back plate, the first opening configured to receive the temperature sensor, wherein the back plate includes a feature between the first opening and the face plate, the feature being in direct contact with the face plate.2. The temperature controlled showerhead assembly of claim 1 , wherein the temperature sensor is removably coupled to the heat conductive stem and to the back plate in the first opening.3. The temperature controlled showerhead assembly of claim 1 , wherein the heat conductive stem claim 1 , the back plate claim 1 , and the first opening are manufactured out of a single piece of material.460613003. The temperature controlled showerhead assembly of claim 1 , wherein each of the heat conductive stem claim 1 , the back plate claim 1 , and the face plate comprises a material selected from the group consisting of aluminum and aluminum .5. The temperature controlled showerhead assembly of claim 1 , wherein heat conductive stem comprises a top surface claim 1 , the first opening extending from the top surface and configured to receive the temperature sensor through the top surface.6. The ...

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Номер записи: 5
04-08-2016 дата публикации

FRONT REFERENCED ANODE

Номер: US20160222541A1
Автор: Feng Jingbin, Ghongadi Shantinath, HE Zhian, Stowell R. Marshall, WILMOT Frederick Dean
Принадлежит:

Apparatus and methods for electroplating are described. Apparatus described herein include anode supports including positioning mechanisms that maintain a consistent distance between the surface of the wafer and the surface of a consumable anode during plating. Greater uniformity control is achieved. 114-. (canceled)15. A method of electroplating a metal onto a work piece , the method comprising maintaining a consistent distance between the plating surface of the work piece and a surface of a consumable anode during plating , by adjusting the position of the consumable anode during plating to compensate for consumption of said surface of the consumable anode.16. The method of claim 15 , wherein the consistent distance varies during plating by no more than 10 μm.17. The method of claim 16 , wherein the work piece is a semiconductor wafer.18. The method of claim 17 , wherein positioning the consumable anode during plating comprises employing an anode positioning mechanism which comprises:(i) a support plate, for supporting the consumable anode; and(ii) a drive component, configured to apply upward force to the support plate sufficient to raise the anode.19. The method of claim 18 , wherein the drive component comprises one or more springs that are compressed between the support plate and a bottom region of a plating chamber and/or a base plate configured to lie in the bottom region of the plating chamber.20. The method of claim 19 , wherein the anode positioning mechanism further comprises a hard stop configured to prevent the consumable anode from being pushed by said one or more springs and thereby maintain said consistent distance.21. A method of electroplating a metal onto a work piece comprising:(a) providing the work piece into an electroplating apparatus comprising a consumable anode having a first surface and a second surface, substantially parallel to the first surface, wherein the consumable anode has at least one channel connecting the first and second ...

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Номер записи: 6
17-04-2012 дата публикации

Topography reduction and control by selective accelerator removal

Номер: US8158532B2
Автор: Avishai Kepten, Eric G. Webb, Mark L. Rea, R. Marshall Stowell, Richard S. Hill, Steven T. Mayer
Принадлежит: Novellus Systems Inc

Plating accelerator is applied selectively to a substantially-unfilled wide (e.g., low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill the wide feature cavity and to form an embossed structure in which the height of a wide-feature metal protrusion over the metal-filled wide-feature cavity is higher than the height of metal over field regions. Most of the overburden metal is removed using non-contact techniques, such as chemical wet etching. Metal above the wide feature cavity protects the metal-filled wide-feature interconnect against dishing, and improved planarization techniques avoid erosion of the metal interconnect and dielectric insulating layer. In some embodiments, plating of metal onto a substrate is conducted to fill narrow (e.g., high-aspect-ratio feature cavities) in the dielectric layer before selective application of plating accelerator and filling of the wide feature cavity.

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Номер записи: 7
20-10-2009 дата публикации

Capping before barrier-removal IC fabrication method

Номер: US7605082B1
Автор: Avishai Kepten, Edmund B. Minshall, Eric G. Webb, Jonathan D. Reid, R. Marshall Stowell, Steven T. Mayer
Принадлежит: Novellus Systems Inc

Methods of forming a capping layer on conductive lines in a semiconductor device may be characterized by the following operations: (a) providing a semiconductor substrate comprising a dielectric layer having (i) exposed conductive lines (e.g., copper lines) disposed therein, and (ii) an exposed barrier layer disposed thereon; and (b) depositing a capping layer material on at least the exposed conductive lines of the semiconductor substrate. In certain embodiments, the method may also involve removing at least a portion of a conductive layer (e.g., overburden) disposed over the barrier layer and conductive lines to expose the barrier layer.

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Номер записи: 8
12-11-2009 дата публикации

Topography reduction and control by selective accelerator removal

Номер: US20090280649A1
Автор: Avishai Kepten, Eric G. Webb, Mark L. Rea, R. Marshall Stowell, Richard S. Hill, Steven T. Mayer
Принадлежит: Novellus Systems Inc

Plating accelerator is applied selectively to a substantially-unfilled wide (e.g., low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill the wide feature cavity and to form an embossed structure in which the height of a wide-feature metal protrusion over the metal-filled wide-feature cavity is higher than the height of metal over field regions. Most of the overburden metal is removed using non-contact techniques, such as chemical wet etching. Metal above the wide feature cavity protects the metal-filled wide-feature interconnect against dishing, and improved planarization techniques avoid erosion of the metal interconnect and dielectric insulating layer. In some embodiments, plating of metal onto a substrate is conducted to fill narrow (e.g., high-aspect-ratio feature cavities) in the dielectric layer before selective application of plating accelerator and filling of the wide feature cavity.

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Номер записи: 9
25-06-2013 дата публикации

Topography reduction and control by selective accelerator removal

Номер: US8470191B2
Автор: Avishai Kepten, Eric G. Webb, Mark L. Rea, R. Marshall Stowell, Richard S. Hill, Steven T. Mayer
Принадлежит: Novellus Systems Inc

Plating accelerator is applied selectively to a substantially-unfilled wide (e.g., low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill the wide feature cavity and to form an embossed structure in which the height of a wide-feature metal protrusion over the metal-filled wide-feature cavity is higher than the height of metal over field regions. Most of the overburden metal is removed using non-contact techniques, such as chemical wet etching. Metal above the wide feature cavity protects the metal-filled wide-feature interconnect against dishing, and improved planarization techniques avoid erosion of the metal interconnect and dielectric insulating layer. In some embodiments, plating of metal onto a substrate is conducted to fill narrow (e.g., high-aspect-ratio feature cavities) in the dielectric layer before selective application of plating accelerator and filling of the wide feature cavity.

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Номер записи: 10
12-10-2010 дата публикации

Capping before barrier-removal IC fabrication method

Номер: US7811925B1
Автор: Avishai Kepten, Edmund B. Minshall, Eric G. Webb, Jonathan D. Reid, R. Marshall Stowell, Steven T. Mayer
Принадлежит: Novellus Systems Inc

Methods of forming a capping layer on conductive lines in a semiconductor device may be characterized by the following operations: (a) providing a semiconductor substrate comprising a dielectric layer having (i) exposed conductive lines (e.g., copper lines) disposed therein, and (ii) an exposed barrier layer disposed thereon; and (b) depositing a capping layer material on at least the exposed conductive lines of the semiconductor substrate. In certain embodiments, the method may also involve removing at least a portion of a conductive layer (e.g., overburden) disposed over the barrier layer and conductive lines to expose the barrier layer.

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Номер записи: 11
09-04-2013 дата публикации

Capping before barrier-removal IC fabrication method

Номер: US8415261B1
Автор: Avishai Kepten, Edmund B. Minshall, Eric G. Webb, Jonathan D. Reid, R. Marshall Stowell, Steven T. Mayer
Принадлежит: Novellus Systems Inc

Methods of forming a capping layer on conductive lines in a semiconductor device may be characterized by the following operations: (a) providing a semiconductor substrate comprising a dielectric layer having (i) exposed conductive lines (e.g., copper lines) disposed therein, and (ii) an exposed barrier layer disposed thereon; and (b) depositing a capping layer material on at least the exposed conductive lines of the semiconductor substrate. In certain embodiments, the method may also involve removing at least a portion of a conductive layer (e.g., overburden) disposed over the barrier layer and conductive lines to expose the barrier layer.

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Номер записи: 12
25-10-2011 дата публикации

Capping before barrier-removal IC fabrication method

Номер: US8043958B1
Автор: Avishai Kepten, Edmund B. Minshall, Eric G. Webb, Jonathan D. Reid, R. Marshall Stowell, Steven T. Mayer
Принадлежит: Novellus Systems Inc

Methods of forming a capping layer on conductive lines in a semiconductor device may be characterized by the following operations: (a) providing a semiconductor substrate comprising a dielectric layer having (i) exposed conductive lines (e.g., copper lines) disposed therein, and (ii) an exposed barrier layer disposed thereon; and (b) depositing a capping layer material on at least the exposed conductive lines of the semiconductor substrate. In certain embodiments, the method may also involve removing at least a portion of a conductive layer (e.g., overburden) disposed over the barrier layer and conductive lines to expose the barrier layer.

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Номер записи: 13
28-03-2013 дата публикации

Lipseals and contact elements for semiconductor electroplating apparatuses

Номер: SG188055A1
Автор: Frederick D Wilmot, Jingbin Feng, Marshall R Stowell
Принадлежит: Novellus Systems Inc

LIPSEALS AND CONTACT ELEMENTS FOR SEMICONDUCTOR ELECTROPLATING APPARATUSESDisclosed herein are lipseal assemblies for use in electroplating clamshells which may include an elastomeric lipseal for excluding plating solution from a peripheral region of a semiconductor substrate and one or more electrical contact elements. The contact elements may be structurally integrated with the elastomericlipseal. The lipseal assemblies may include one or more flexible contact elements at least a portion of which may be conformally positioned on an upper surface of the elastomeric lipseal, and may be configured to flex and form a conformal contact surface that interfaces with the substrate. Some elastomeric lipseals disclosed herein may support, align, and seal a substrate in a clamshell, and may include a flexibleelastomeric upper portion located above a flexible elastomeric support edge, the upper portion having a top surface and an inner side surface, the later configured to move inward and align the substrate upon compression of the top surface.FIG. 3A

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Номер записи: 14
31-07-2014 дата публикации

電気充填真空めっきセル

Номер: JP2014139341A
Автор: Jingbin Feng, Marshall R Stowell, Porter David, ジンビン・フォン, デビッド・ポーター, マーシャル・アール．・ストーウェル
Принадлежит: Novellus Systems Inc

【課題】ウェハのめっきの均一性を最大にするためウェハの浸漬時の泡形成を防止して浸漬時間を短くする方法及び装置を提供する。 【解決手段】基板の浸漬に伴う泡の形成／捕捉を低減又は排除するために１００トール以下の好ましくは２０トール以下の減圧条件下で電気めっきセル６０１内の電解質に基板を浸漬させる。めっきセル６０１に電解質を提供するために、様々な電解質再循環ループが開示される。再循環ループは、ポンプ６０６、脱気器６０８、センサ６１４、弁などを含んでいてよい。開示される実施形態は、基板が速やかに浸漬されることを可能にし、電気めっき中における泡の形成及び不均等なめっき時間に関連する問題を大幅に軽減する。 【選択図】図６

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Номер записи: 15
13-06-2017 дата публикации

Electrofill vacuum plating cell

Номер: US09677188B2
Автор: David W. Porter, Jingbin Feng, R. Marshall Stowell
Принадлежит: Novellus Systems Inc

The disclosed embodiments relate to methods and apparatus for immersing a substrate in electrolyte in an electroplating cell under sub-atmospheric conditions to reduce or eliminate the formation/trapping of bubbles as the substrate is immersed. Various electrolyte recirculation loops are disclosed to provide electrolyte to the plating cell. The recirculation loops may include pumps, degassers, sensors, valves, etc. The disclosed embodiments allow a substrate to be immersed quickly, greatly reducing the issues related to bubble formation and uneven plating times during electroplating.

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Номер записи: 16