Compositions and antireflective coatings for photolithography

The invention provides a composition comprising at least the following A and B: A) polymer that comprises the following structural unit 1: wherein L is CX-CYZ, where X, Y, and Z are each independently selected from hydrogen, an alkyl, or a substituted alkyl; and, M is an alkylene, an arylene, a substituted alkylene, a substituted arylene, or C(O)O-W-, where W is an alkylene or a substituted alkylene; and R', R'', and R''' are each independently selected from an aromatic hydrocarbon, an aliphatic hydrocarbon, or a substituted hydrocarbon that comprises one or more of O, N, S, or Si atoms, provided that at least one of R', R'', and R''' is selected from alkoxyl, aryloxyl, hydroxyl, halide, carboxyl, or carbonate; and, p is an integer from 1 to 10,000; and with the proviso that the polymer does not comprise a polyhedral oligomeric silsesquioxane (POSS) structure; and B) a polymer formed from a first composition comprising at least one of Compound F1, Compound F2, Compound F3 and/or Compound ...

Multi-directional electrical power protection system

A multidirectional electrical power protection system, includes a first power supply and at least a second power supply with each supply being configured for supplying power to a main bus circuit; a first load bus electrically connected to the first power supply and at least the second power supply, at least a second load bus electrically coupled with each of the first power supply and at least the second power supply, the first load bus and the second load bus configured for energizing devices connected to the respective first and second load bus; and at least one smart contactor in coupled with the main bus circuit, the at least one smart contactor being configured for sensing a first current flowing in a first direction through the main bus circuit and for sensing a second current flowing in a second direction through the main bus circuit.

COMPOSITIONS AND ANTIREFLECTIVE COATINGS FOR PHOTOLITHOGRAPHY

Compositions for use in microelectronic applications: 2. The first composition of claim 1 , comprising greater than claim 1 , or equal to claim 1 , 5 weight percent Si claim 1 , based on the sum weight of Compounds F1 claim 1 , F2 claim 1 , F3 and F4.3. The first composition of or claim 1 , wherein the sum molar amount of Compound F2 and Compound F4 is greater than claim 1 , or equal to claim 1 , 40 mole percent claim 1 , based on the sum moles of Compounds F1 claim 1 , F2 claim 1 , F3 and F4.4. The first composition of any of the previous claims claim 1 , wherein Compound F4 is present in an amount greater than 10 mole percent claim 1 , based on the sum moles of Compounds F1 claim 1 , F2 claim 1 , F3 and F4.5. The first composition of any of the previous claims claim 1 , wherein Compound F1 is present in an amount greater than 10 mole percent claim 1 , based on the sum moles of Compounds F1 claim 1 , F2 claim 1 , F3 and F4.6. The first composition of any of the previous claims claim 1 , wherein Compound F4 is present in an amount less than 65 mole percent claim 1 , based on the sum moles of Compounds F1 claim 1 , F2 claim 1 , F3 and F4.7. A prepolymer formed from the first composition of any of the previous claims.8. A second composition comprising the prepolymer claim 7 , and at least one of the following: an amine-containing compound claim 7 , a halide-containing compound claim 7 , a hydrochloride claim 7 , an ammonium-containing compound claim 7 , or a mixture thereof.9. A crosslinked composition formed from the second composition of .10. An article comprising at least one component formed from the composition of any of the previous claims.119. A film comprising at least one layer formed from the composition of any of -.12. The film of claim 11 , further comprising a second layer formed from a third composition comprising a polymer.13. A method of forming a coating on a substrate claim 11 , said method comprising at least the following: providing a substrate ...

COMPOSITIONS AND ANTIREFLECTIVE COATINGS FOR PHOTOLITHOGRAPHY

A composition comprising: 2. The composition of claim 1 , wherein in structural unit (1) claim 1 , X claim 1 , Y claim 1 , and Z are each independently selected from hydrogen or a C1-C10 alkyl group.3. The composition of of claim 1 , wherein claim 1 , in structural unit (1) claim 1 , M is a C1 to C10 alkylene claim 1 , a C1 to C10 arylene claim 1 , or a C(O)O—W— claim 1 , and W is a C1 to C10 alkylene group.4. The composition of any of the previous claims claim 1 , wherein claim 1 , in structural unit (1) claim 1 , R′ claim 1 , R″ claim 1 , and R′″ are each independently selected from a C1 to C10 aliphatic hydrocarbon claim 1 , a C1 to C10 aromatic hydrocarbon claim 1 , OH claim 1 , OR claim 1 , OC(O)R claim 1 , or OC(O)OR claim 1 , where R is a C1 to C10 aliphatic hydrocarbon claim 1 , or a C1 to C10 aromatic hydrocarbon claim 1 , provided that at least one of R′ claim 1 , R″ claim 1 , and R′″ is OH claim 1 , OR claim 1 , OC(O)R claim 1 , or OC(O)OR.5. The composition of any of the previous claims claim 1 , wherein claim 1 , in structural unit (1) claim 1 , X claim 1 , Y claim 1 , and Z are each independently selected from hydrogen claim 1 , or a C1 to C10 alkyl group; andM is a C1 to C10 alkylene, a C1 to C10 arylene, or a C(O)O—W—, and W is a C1 to C10 alkylene group; andR′, R″, and R′″ are each independently selected from a C1 to C10 aliphatic hydrocarbon, a C1 to C10 aromatic hydrocarbon, OH, OR, OC(O)R, or OC(O)OR, where R is a C1 to C10 aliphatic hydrocarbon, or a C1 to C10 aromatic hydrocarbon, provided that at least one of R′, R″, and R′″ is OH, OR, OC(O)R, or OC(O)OR; andp is an integer from 10 to 1000.8. The composition of any of the previous claims claim 1 , wherein structural unit (1) is poly(3-acryloxypropyltrimethoxysilane).9. The composition of any of the previous claims claim 1 , wherein the polymer of component A has an Mw from about 10 claim 1 ,000 to about 100 claim 1 ,000.10. The composition of any of the previous claims claim 1 , wherein the ...

Multi-directional electrical power protection system

A multidirectional electrical power protection system, includes a first power supply and at least a second power supply with each supply being configured for supplying power to a main bus circuit; a first load bus electrically connected to the first power supply and at least the second power supply, at least a second load bus electrically coupled with each of the first power supply and at least the second power supply, the first load bus and the second load bus configured for energizing devices connected to the respective first and second load bus; and at least one smart contactor in coupled with the main bus circuit, the at least one smart contactor being configured for sensing a first current flowing in a first direction through the main bus circuit and for sensing a second current flowing in a second direction through the main bus circuit.

COMPOSITIONS FOR ANTIREFLECTIVE COATINGS

A composition comprising the following: 2. The composition of claim 1 , wherein the first composition comprises less than 2 weight percent of a trivalent or higher multivalent alcohol claim 1 , based on the weight of the prepolymer.3. The composition of claim 1 , wherein in Formula A claim 1 , at least two of R1′ claim 1 , R2′ claim 1 , R3′ or R4′ are each a methyl.4. The composition of claim 1 , wherein R1′ claim 1 , R2′ claim 1 , R3′ claim 1 , R4′ are each independently selected from hydrogen claim 1 , C1-C3 alkyl or aryl.5. The composition of claim 1 , wherein the composition comprises less than 1 ppm of a metal oxide claim 1 , based on the weight of the composition.6. The composition of claim 1 , wherein the composition comprises less than 1 ppm of a “light absorbing dye claim 1 ,” based on the weight of the composition.7. A crosslinked composition formed from the composition of .8. An article comprising at least one component formed from the composition of .9. A film comprising at least one layer formed from the composition of .10. The film of claim 9 , further comprising a second layer formed from a third composition comprising a polymer.11. A method of forming a coating on a substrate claim 9 , said method comprising at least the following: providing a substrate claim 9 ,forming an underlayer on the substrate, wherein the underlayer comprises at least one polymer,{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'applying the composition of over the underlayer, and'}curing the composition to form the coating.12. The method of claim 11 , wherein multiple layers of the composition are applied over the underlayer.13. The method of claim 11 , wherein the coating is an antireflective layer.14. A method of forming a coating on a substrate claim 11 , said method comprising at least the following: providing a substrate claim 11 ,{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'applying the composition of over at least a portion of the substrate, or over one or more ...

SILICON-CONTAINING UNDERLAYERS

Wet-strippable underlayer compositions comprising one or more silicon-containing polymers comprising a backbone comprising Si—O linkages, one or more organic blend polymers, and a cure catalyst are provided. These compositions are useful in the manufacture of various electronic devices. 1. A process comprising: (a) coating a substrate with a coating composition comprising one or more curable silicon-containing polymers comprising a backbone comprising Si—O linkages , and one or more organic blend polymers comprising as polymerized units one or more ethylenically unsaturated monomers having an acidic proton and having a pKa in water from −5 to 13 , and one or more organic solvents to form a curable silicon-containing polymer layer on the substrate; (b) curing the silicon-containing polymer layer to form a siloxane underlayer; (c) disposing a layer of a photoresist on the siloxane underlayer; (d) pattern-wise exposing the photoresist layer to form a latent image; (e) developing the latent image to form a patterned photoresist layer having a relief image therein; (f) transferring the relief image to the substrate; and (g) removing the siloxane underlayer by wet stripping.2. The process of wherein the organic blend polymer comprises as polymerized units two or more ethylenically unsaturated monomers.7. The process of wherein the lactone moiety of Ris a 5 to 7-membered ring or a substituted 5 to 7-membered ring.8. The process of wherein the coating composition further comprises one or more cure catalysts.11. The process of further comprising coating a layer of a high carbon-content organic coating on the substrate prior to step (a).12. The process of wherein the wet stripping step comprises contacting the siloxane underlayer with a mixture of sulfuric acid and hydrogen peroxide or a mixture of ammonia and hydrogen peroxide.13. A composition comprising: one or more curable silicon-containing polymers comprising a backbone comprising Si—O linkages; and one or more organic ...

Silicon-containing underlayers

Wet-strippable underlayer compositions comprising one or more silicon-containing polymers comprising a backbone comprising Si—O linkages, one or more organic blend polymers, and a cure catalyst are provided. These compositions are useful in the manufacture of various electronic devices.

SILICON-CONTAINING UNDERLAYERS

Wet-strippable underlayer compositions comprising one or more silicon-containing polymers comprising a backbone comprising Si—O linkages, one or more organic blend polymers, and a cure catalyst are provided. These compositions are useful in the manufacture of various electronic devices. 2. The composition of further comprising one or more organic solvents.4. The composition of wherein the lactone moiety of Ris a 5 to 7-membered ring or a substituted 5 to 7-membered ring.8. The composition of wherein the cure catalyst is a quaternary ammonium salt. This application claims the benefit of U.S. patent application Ser. No. 15/254,929, filed on Sep. 1, 2016, now allowed.The present invention relates generally to underlayers and methods of using them, and particularly to wet-strippable silicon-containing underlayers and their use in the manufacture of electronic devices.In conventional photolithographic processes, the resist pattern is used as a mask for pattern transfer to the substrate by suitable etching processes, such as by reactive ion etch (RIE). The continued decrease in the thickness of the resist used makes the resist pattern unsuitable as a mask for pattern transfer by RIE processes. As a result, alternate processes have been developed using three, four or more layers as a mask for pattern transfer. For example, in a trilayer process a silicon-containing antireflective layer is disposed between an underlayer/organic planarizing layer and the resist layer. Due to the alternating selectivity towards fluorine and oxygen-containing RIE chemistry these layers possess, this trilayer scheme provides highly selective pattern transfer from the resist pattern on top of the Si-containing layer into the substrate below the underlayer.The resistance of the silicon-containing underlayer toward oxide-etch chemistry allows this layer to function as an etch mask. Such silicon-containing underlayers are comprised of a crosslinked siloxane network. The etch resistance of these ...

Circuit breakers with back-feed protection

A circuit breaker includes a switch with a supply terminal and a load terminal. A blocking diode is electrically connected in series between the switch and one of the supply terminal and the load terminal. The blocking diode is arranged to oppose current flow between the load terminal and the supply terminal through the switch to prevent current back-flow through the circuit breaker.

Compositions and antireflective coatings for photolithography

Compositions for antireflective coatings

【課題】増加した安定性及び改善された性能を有する反射防止層組成物のための組成物を提供すること。【解決手段】少なくともＡ）式Ａで表される化合物から選択される硬化触媒と、Ｂ）ポリシロキサン系プレポリマーと、を含む組成物。［ＮＲ１’Ｒ２’Ｒ３’Ｒ４’］＋Ｘ−（式Ａ）［Ｒ１’〜Ｒ４’は夫々独立して水素、アルキル、置換アルキル、アリール又は置換アリール；Ｘは一価アニオン；但し、Ｒ１’〜Ｒ４’の内の少なくとも１つはメチルである］【選択図】なし

シリコン含有下層

【課題】パターン転写中に所望のエッチ選択性を提供し、かつ湿式化学工程によって容易に除去可能なシリコン含有下層を提供する。【解決手段】（ａ）Ｓｉ−Ｏ結合を含む骨格を含む１つ以上の硬化性シリコン含有ポリマーと、１つ以上の有機ブレンドポリマーと、１つ以上の有機溶媒とを含むコーティング組成物で基板をコーティングして、基板上に硬化性シリコン含有ポリマー層を形成することと、（ｂ）シリコン含有ポリマー層を硬化させて、シロキサン下層を形成することと、（ｃ）フォトレジスト層をシロキサン下層上に配置することと、（ｄ）フォトレジスト層をパターン的に曝露して、潜像を形成することと、（ｅ）潜像を現像して、レリーフ像を内部に有するパターン化されたフォトレジスト層を形成することと、（ｆ）レリーフ像を基板に転写することと、（ｇ）湿式剥離によってシロキサン下層を除去することと、を含む、方法。【選択図】なし

シリコン含有下層

【課題】パターン転写中に所望のエッチ選択性を提供し、かつ湿式化学工程によって容易に除去可能なシリコン含有下層を提供する。【解決手段】（ａ）Ｓｉ−Ｏ結合を含む骨格を含む１つ以上の硬化性シリコン含有ポリマーと、１つ以上の有機ブレンドポリマーと、１つ以上の有機溶媒とを含むコーティング組成物で基板をコーティングして、基板上に硬化性シリコン含有ポリマー層を形成することと、（ｂ）シリコン含有ポリマー層を硬化させて、シロキサン下層を形成することと、（ｃ）フォトレジスト層をシロキサン下層上に配置することと、（ｄ）フォトレジスト層をパターン的に曝露して、潜像を形成することと、（ｅ）潜像を現像して、レリーフ像を内部に有するパターン化されたフォトレジスト層を形成することと、（ｆ）レリーフ像を基板に転写することと、（ｇ）湿式剥離によってシロキサン下層を除去することと、を含む、方法。【選択図】なし