Plasma processing device capable of increasing the capacitance between the focus ring and the base and adjusting the capacitance between the focus ring and the base

The present invention discloses a plasma processing device. Under the condition that the relative area and relative distance between a focus ring and a base and materials of the focus and the base are fixed, the capacitance between the focus ring and the base can be increased by arranging a conductive material insertion ring between the focus ring and the base to achieve the purpose of increasing the voltage on the focus ring. By adjusting the capacitance between the focus ring and the conductive material insertion ring through a first capacitance adjusting layer or by adjusting the capacitance between the conductive material insertion ring and the base through the first capacitance adjusting layer, the capacitance between the focus ring and the base can be adjusted to achieve the purpose of adjusting the voltage on the focus ring. By increasing the voltage on the focusing ring, and by optimizing the adjustment range of the capacitance by the first capacitor adjustment layer to achieve ...

Plasma processing device optimizing the ground impedance of different sub-grounding areas to realize the compensation of the asymmetry of the etching process

This invention relates to a plasma processing device with a reaction chamber located inside, which includes: a gas shower head and an electrostatic chuck arranged oppositely; and an upper grounding ring arranged around the gas shower head. The upper grounding ring is divided into a plurality of sub-grounding areas along the circular direction, wherein each of the sub-grounding areas is electrically connected to an impedance adjustable device located outside of the reaction chamber. It can be seen from the above content that the technical solution provided by the present invention divides the upper grounding ring into a plurality of sub-grounding areas along the circular direction, and electrically connects each sub-grounding area to an impedance adjustable device, and by adjusting the impedance of the impedance adjustable device, it achieves the purpose of adjusting the ground impedance of the sub-grounding areas; furthermore, by optimizing the ground impedance of different sub-grounding ...

Method and device for matching impedance of pulse radio frequency plasma

A method and a device for matching an impedance of pulse radio frequency plasma, and a plasma processing device are provided. In the method, a matched frequency is searched for sequentially in high radio frequency power phases of an i-th pulse period and multiple pulse periods following the i-th pulse period, and a specific modulation frequency determined in a process of searching for the matched frequency in a previous pulse is assigned as an initial frequency for the subsequent pulse. In this way, it is equivalent to increasing a width of a first radio frequency power phase of a pulse period. Therefore, by sequentially performing frequency modulation in the first radio frequency power phases of the multiple pulses, a matched frequency of pulse radio frequency plasma of a high pulse frequency can be found, thereby achieving impedance matching of plasma of a high pulse frequency.

Plasma processor and method for preventing arc damage to confinement ring capable of preventing the confinement ring from being broken down by arc under a low frequency radio frequency electric field

The present invention provides a plasma processor including a plasma reaction chamber. The bottom of the plasma reaction chamber is provided with a base for placing a wafer. A plasma confinement ring and a ground ring are arranged around the base. The outer ring of the plasma confinement ring is provided with a supporting part. A conductive layer is arranged between the support part and the ground ring for changing the original point contact manner between the support part and the ground ring to a surface contact manner to thereby increase an insulating contact area between the plasma confinement ring and the ground ring. The plasma confinement ring, the conductive layer, and the ground ring are integrated and fixedly connected by a plurality of screws, which reduces the distance between the plasma confinement ring and the area outside the original point contact of the ground ring, increases the capacitance between the plasma confinement ring and the ground ring, reduces the voltage difference ...

Plasma radio frequency adjusting method and plasma processing device capable of quickly adjusting the frequency and quickly finding the radio frequency power corresponding to the minimum reflected power for the radio frequency pulse period

The present invention discloses a plasma radio frequency adjusting method and a plasma processing device. The adjusting method is performed by a radio frequency power generator. The radio frequency power generator includes an automatic frequency modulation device. The radio frequency power generator outputs a pulsed radio frequency signal. A controller, at the beginning of each radio frequency pulse period, provides the radio frequency power generator with an ignition frequency and maintains the ignition frequency for a specific period of time, and provides the automatic frequency modulation device with a start frequency after a certain period of time of each radio frequency pulse period, and reads an end frequency at the end of each radio frequency pulse period. The end frequency of each radio frequency pulse period is used as the start frequency of the next radio frequency pulse period. The start frequency of the radio frequency pulse period is a preset frequency. The method of the invention ...

Static electric chuck and plasma treatment device thereof capable of preventing chuck from generating arc under high radio frequency power

The invention discloses a static electric chuck and its plasma treatment device. The static electric chuck disclosed by the invention comprises a base and a static electric sandwiched layer interposed on the base, wherein a plurality of lifting thimble assemblies are installed through the electric static chuck, and the assembly comprising a lifting thimble, a thimble clamping member and a lifting thimble channel. The thimble clamping member is disposed on an end of the lifting thimble channel away from a base sheet to drive the lifting thimble vertically moving in the channel and always locating below the base in the process of vertical moving. To reduce arc discharge phenomenon inside the lifting thimble channel that may be caused by high power, the thimble clamping member of the present invention is arranged outside the lifting thimble channel, and the lifting thimble is merely contained in the lifting thimble channel to further decrease the size of the lifting thimble channel such that ...

Wafer fastening apparatus and forming method thereof, and plasma processing equipment for reducing power loss of radio frequency signals

The invention provides a wafer fastening apparatus and a forming method thereof, and a plasma processing equipment. The wafer fastening apparatus includes an electrostatic sucker carrying a wafer, a base carrying the electrostatic sucker, and an equipment board carrying the base and the electrostatic sucker, wherein the base and the equipment board are both made of metal materials, the equipment board and the base are directly contacted, and a flexible conductive layer may be filled between the equipment board and the base; the flexible conductive layer may enlarge the electric contact between the base and the equipment board and increase the capacitance between the equipment board and the base. Thus, the equipment board and the base may have larger and more stable capacitance therebetween, which is beneficial for the passage of radio frequency signals between the equipment board and the base and correspondingly reduces the passage of radio frequency signals in other paths, thereby further ...

Plasma treatment device with multi-area adjustable magnetic conducting ring and treatment method for plasma treatment device

The invention provides a plasma treatment device with a multi-area adjustable magnetic conducting ring. The plasma treatment device comprises a reaction cavity and upper and lower electrodes in the reaction cavity, wherein a radio frequency power supply is connected to the upper or lower electrode; the reaction cavity also comprises an annular magnetic conducting circuit which is formed by combining a plurality of arc-shaped magnetic conducting components; the annular magnetic conducting circuit surrounds an area for generating plasma between the upper electrode and the lower electrode; a capacitive coupling electric field generated between the upper electrode and the lower electrode passes through the annular magnetic conducting circuit; each arc-shaped magnetic conducting component comprises two terminals; a gap is formed between the terminals of two adjacent arc-shaped magnetic conducting components; the plurality of arc-shaped magnetic conducting components are wound with adjustingcoils ...

Plasma radio frequency adjustment method and plasma processing device capable of quickly adjusting the frequency and finding the radio frequency power corresponding to the minimum reflected power

The present invention discloses a plasma radio frequency (RF) adjustment method. The adjustment method is performed by an RF power generator. The RF power generator includes an automatic frequency modulation device. The RF power generator outputs a pulse RF signal. A controller is configured with plural continuous radio frequency adjustment intervals, each radio frequency adjustment interval having at least one pulse radio frequency period. The automatic frequency modulation device performs at least one automatic frequency modulation in each of the radio frequency adjustment intervals. Each radio frequency adjustment interval includes a start frequency and an end frequency. The start frequency of each radio frequency adjustment interval is the end frequency of the previous radio frequency adjustment interval. The start frequency of the first radio frequency adjustment interval is a preset frequency. With the method of the present invention, it is able to quickly adjust the frequency, and ...

Plasma processor and upper electrode assembly for the same capable of maintaining stable heat conduction between an upper electrode plate and a mounting plate under different temperatures

The invention provides an upper electrode assembly for a plasma processor, which comprises: a mounting plate and an upper electrode plate, wherein the mounting plate and the upper electrode plate are connected and fastened with each other by a mechanical fastening device. In the gap between the mounting plate and the upper electrode plate, there are a plurality of elastic heat conduction pads, wherein the first elastic heat conduction pad and the second elastic heat conduction pad are sequentially disposed from the inner side to the outer side. The initial height of the first elastic heat conduction pad is lower than that of the second elastic heat conduction pad. After mounting the mechanical fastening device in the gap between the mounting plate and the upper electrode plate, when the upper electrode assembly is heated to the plasma processing temperature, each of the plurality of elastic heat conduction pads is provided with a high-temperature compression height, wherein the high-temperature ...

Capacitively coupled plasma processing device and plasma processing method

The invention relates to a capacitively coupled plasma processing device and a corresponding plasma processing method, wherein the device and the method are used for improving substrate etching uniformity. The capacitively coupled plasma processing device comprises the components of an upper electrode and a lower electrode which are oppositely arranged, wherein a processing region P exists betweenthe upper electrode and the lower electrode; an RF power source; a bias power source which applies to the lower electrode; and an annular member which is arranged in a manner of surrounding the lowerelectrode and is grounded through an impedance adjusting device.

Plasma processing device including a processing chamber, a base, an electrostatic chuck table, a silicon wafer thimble, and a clamping electrode

The present invention discloses a plasma processing device, including a processing chamber; a base provided at a bottom portion inside the processing chamber; an electrostatic chuck table provided above the base and configured to carry a silicon wafer; a silicon wafer thimble vertically penetrating through the base and the electrostatic chuck and having a gap respectively formed in the base and in the electrostatic chuck table where the gap is a passway for the silicon wafer thimble. During the plasma etching process, a top end of the silicon wafer thimble always contacts the lower surface of the silicon wafer to ensure that scratches are formed on the surface of the silicon wafer; and a clamping electrode embedded in the electrostatic chuck table. The present invention further discloses a method for measuring silicon wafer temperature under high power radio frequency. The present invention uses the principle of thermal expansion to indirectly measure the temperature of the silicon wafer ...

Plasma confinement system and method can effectively enhance the confined performance of plasma confinement ring

The invention provides a plasma confinement system and method. The plasma confinement system is disposed with an upper portion ring body and a lower portion ring body, respectively including a plurality of inclined channels distributed toward outside from inside of the located ring body along radial direction. Moreover, a channel of an upper portion ring body and a channel of the lower portion ring body have opposite inclination directions so that charged particles are neutralized to realize plasma confinement during a process of delivering exhaust produced in a processing region of a reaction chamber to an exhaust region while passing through the channel of the upper portion ring body and the channel of the lower portion ring body. The invention respectively regulates distribution density of each channel in the upper portion ring body and the lower portion ring body according to distribution density of plasma. Accordingly, under premise of no losing air conduction rate, confinement performance ...

Method and device for matching impedance of pulse radio frequency plasma

A method and a device for matching an impedance of pulse radio frequency plasma, and a plasma processing device are provided. In the method, a matched frequency is searched for sequentially in high radio frequency power phases of an i-th pulse period and multiple pulse periods following the i-th pulse period, and a specific modulation frequency determined in a process of searching for the matched frequency in a previous pulse is assigned as an initial frequency for the subsequent pulse. In this way, it is equivalent to increasing a width of a first radio frequency power phase of a pulse period. Therefore, by sequentially performing frequency modulation in the first radio frequency power phases of the multiple pulses, a matched frequency of pulse radio frequency plasma of a high pulse frequency can be found, thereby achieving impedance matching of plasma of a high pulse frequency.

Capacitively coupled plasma processing device and method thereof characterized in that the angular non-uniformity of the etching rate can be improved pertinently

The present invention provides a capacitively coupled plasma processing device and a method thereof. The capacitively coupled plasma processing device includes: an upper electrode and a lower electrode disposed oppositely; a radio frequency power source applied to the lower electrode or the upper electrode; a bias power source applied to the lower electrode; a fringe electrode which is in an annular shape, arranged at the periphery of lower electrode, concentric with the lower electrode and divided into at least two parts along the circumferential direction, wherein, each part of the fringe electrode performs a ground connection via an impedance adjustment unit so as to form a ground circuit of fringe radio frequency current. By setting the fringe electrode to be a segmental manner of being from two segments to multiple segments, each segment is connected to its own impedance adjustment unit, the grounded impedance can be adjusted independently and a more accurate cavity local impedance ...

Capacitively coupled plasma processing apparatus and plasma processing method

The invention relates to a capacitively coupled plasma processing apparatus and a corresponding plasma processing method to improve uniformity of substrate etching. The processing apparatus includes: an upper electrode and a lower electrode arranged opposite to each other, wherein a processing region exists between the upper electrode and the lower electrode; a radio frequency power source; a biaspower source, which is applied to the lower electrode; and a ring member, which surrounds the lower electrode and is circumferentially divided into at least two parts, wherein each part is grounded through an impedance adjusting device.

Screw assembly and radio frequency processing device using the same ensuring a stable path of RF current loop with low changes in the impedance and without drifting

The invention provides a screw assembly comprising a splint including an upper splint, a lower splint and a splint opening disposed therebetween, a screw hole penetrating the splint for receiving the screw, and a stainless elastic piece located in the splint opening and provided with a circular opening corresponding to the screw hole, wherein the area of the stainless elastic piece near the circular opening and the area close to the edge are located in different planes, the area of the stainless elastic piece near the circular opening and the area close to the edge respectively form an acute angle with the upper splint and the lower splint. The screw assembly of the invention is provided with an anti-loose mechanism for effectively ensuring the good contact between the screw assembly and the screw, and ensuring that the path of the RF current loop is stable to avoid changes in the impedance of the RF loop and the conditions of RF discharge do not drift.

Radio frequency power source device and radio frequency power distribution method for plasma processing equipment capable of greatly widening the effective power range of the radio frequency source generator, improving complexity of the manufacturing process of the plasma processing equipment, and reducing the equipment cost

The present invention relates to a radio frequency power source device and a radio frequency power distribution method for plasma processing equipment. The radio frequency power source device includes a radio frequency source generator, a radio frequency matching box, and a power divider connected to the radio frequency matching box and a radio frequency conductor part of the plasma processing equipment. If the radio frequency power required by the plasma processing equipment is less than the minimum effective output power of the radio frequency source generator, the radio frequency source generator outputs any radio frequency power value greater than the minimum effective output power to the power divider, and the power divider divides the radio frequency power value provided by the radio frequency source generator into one or more radio frequency powers required by the plasma processing equipment and outputs same to the radio frequency conductor part of the plasma processing equipment ...

Lift pin assembly, an electrostatic chuck and a processing apparatus where the electrostatic chuck is located

Disclosed are a lift pin assembly, an electrostatic chuck with the lift pin assembly, and a processing apparatus where the electrostatic chuck is located. The lift pin assembly comprises: a lift pin, a lift pin receiving channel connected to a pressure control device, one end of the lift pin receiving channel proximal to a wafer being provided with a sealing ring, an upper surface of the sealing ring being in contact with a back face of the wafer during processing to avoid a gas at the back face of the wafer from entering the lift pin receiving channel, thereby enabling the pressure control device to independently control the pressure in the lift pin receiving channel.

Plasma confinement structure and manufacturing method thereof, and plasma processing device for enhancing plasma confinement capability

The present invention provides a plasma confinement structure and a manufacturing method thereof, and a plasma processing device. In which, the plasma confinement structure may include a ground ring and a confinement ring disposed on the ground ring, wherein an insulation layer is formed between the ground ring and the confinement ring. The ground ring is formed with a plurality of first channels and the confinement ring is formed with a plurality of second channels, wherein the first channel and the second channel are communicated with each other and the first channel and the second channel are not on the same line. While forming plasma on the confinement ring, the plasma can enter the confinement ring through the second channel, and the confinement ring may confine the plasma thereon. Since the first channel and the second channel are not on the same line, when the first channel and the second channel are used as the plasma channel, the channel length is increased, and the possibility ...

Plasma processor and processing method thereof

The invention provides a plasma processor comprising a reaction chamber, wherein a base is arranged in the reaction chamber and a wafer is placed on the base; a source RF power supply used for outputting a high-frequency RF signal into the reaction chamber to ignite and maintain a plasma; a first bias RF power supply and a second bias RF power supply, wherein the first bias RF power supply outputs a first frequency RF signal, the second bias RF power supply outputs a second frequency RF signal, the first frequency is less than the second frequency, and the first frequency RF signal and the second frequency RF signal are superimposed to form a periodic first superimposed signal applied to the base; and a controller used for adjusting at least one of the amplitudes, the frequencies, the average potentials, and the phases of the first frequency RF signal and the second frequency RF signal such that the first superimposed signal has three successive phases in each cycle including a falling ...

Plasma processing apparatus with a function for distributing and adjusting radio frequency power

Radio frequency power supply system, plasma processor, and frequency-tuning matching

Disclosed are a radio-frequency power supply system, a plasma processor, and a corresponding frequency-tuning matching method applied to a plasma processor having an ultra-low frequency bias radio-frequency power source. The frequency-tuning matching method comprises an impedance segment frequency matching obtaining step including partitioning a low frequency radio-frequency power output period into a plurality of impedance matching segments, and during each impedance matching segment, tuning output frequency of a high frequency radio-frequency source, detecting reflected power of the high frequency radio-frequency power supply, and after experiencing one or more low frequency radio-frequency power output period, obtaining and storing the segment matching frequency for each impedance matching segment. In the subsequent variable-frequency matching step, output frequency of the high frequency radio-frequency power supply is set to periodically vary in the stored plurality of segment matching ...

Plasma processing device with flexible dielectric sheet having good radio frequency current passing capacity, convenient to install, and having a long service life

The present invention relates to a plasma processing device with a flexible dielectric sheet. The upper part of the flexible dielectric sheet is conductively connected to a ground ring structure, and the lower part is conductively connected to an outer wall surrounding a cavity of a reaction chamber. The grounding ring structure surrounds a periphery of a base of the plasma processing device, and can move up and down along with the base in the cavity of the reaction chamber or be positioned at a set height. The shortest length of the flexible dielectric sheet matches the longest distance between the ground ring structure and the cavity. The flexible dielectric sheet of the present invention, through optimization, has good radio frequency current passing capacity, is convenient to install, has a long service life, and does not produce metal pollution.

Capacitive coupled plasma processing system with adjustable electrode pitch and method thereof capable of avoiding asymmetric etching caused by slit door and effectively constraining plasma at slit door

The present invention discloses a capacitive coupled plasma processing system with adjustable electrode plate pitch and a method thereof. The system comprises: an upper electrode, a lower electrode, a bridge ring, an outer ring guiding rail, a ground ring, and a slit door. The lower electrode is connected to the outer ring guiding rail through the bridge ring so as to form a lower electrode system. The outer ring guiding rail moves up and down along the inner wall of the etching chamber and is disposed with a ground ring at a specific position, so as to fix the outer ring guiding rail onto the ground ring to complete the grounding state. At this time, the outer ring guiding rail may completely block and shield the slit door. The system of the present invention may overcome the defects in the prior art, such as the asymmetric issue in etching process caused by being unable to avoid the slit door and the invalid constraint of the plasma at the slit door while the etching process requires ...

Plasma confinement assembly and processing device therein

The invention discloses a plasma confinement assembly and a processing device therein. The plasma processing device comprises a reaction chamber. An electrostatic chuck for supporting a substrate is arranged in the reaction chamber. The plasma confinement assembly is located between the electrostatic chuck and the side wall of the reaction chamber, and comprises a plasma confinement ring and a U-shaped ground ring. The ground ring comprises a ground shield ring which is located between the plasma confinement ring and the side wall of the reaction chamber. A film transfer gate is arranged on the side wall of the reaction chamber. The ground shield ring is used to protect the electric field between the plasma confinement ring and the side wall of the reaction chamber from the influence of the film transfer gate. According to the invention, the U-shaped ground ring keeps the capacitance value of the plasma confinement ring constant during the spacing adjustment of electrode plates; the consistency ...

Electrostatic chuck, method of manufacturing electrostatic chuck, and plasma processing apparatus

Embodiments of the present disclosure provide an electrostatic chuck, comprising a base and a disc structure disposed on the base, the upper surface of the disc structure being configured to hold a wafer. A first through-hole is formed in the base. A shunt part is formed in the first through-hole to partition the first through-hole into a plurality of sub-through-holes. A filled layer is formed between the shunt part and the sidewall of the first through-hole. A second through-hole is provided in and axially penetrating through the disc structure, the first through-hole communicating with the second through-hole. With such configurations, a cooling gas is enabled to pass through the plurality of sub-through-holes in the first through-hole to the second through-hole, thereby accessing the wafer held on the disc structure to regulate wafer temperature. The filled layer is configurable to fill the sidewall gap between the shunt part and the base, preventing the cooling gas in the first through-hole ...

Radio Frequency Electrode Assembly for Plasma Processing Apparatus, And Plasma Processing Apparatus

Disclosed are a radio frequency electrode assembly for a plasma processing apparatus, and a plasma processing apparatus, wherein the radio frequency electrode assembly for a plasma processing apparatus comprises: a base in which a first fluid passage is provided, the first fluid passage being configured for connecting to a first fluid source; an electrostatic chuck disposed on the base; a focus ring disposed peripheral to the electrostatic chuck; a heat conducting ring disposed around the base, the heat conducting ring enclosing at least part of the base, the heat conducting ring being disposed below the focus ring, a second fluid passage being provided in the heat conducting ring, the second fluid passage being connected to a second fluid source, heat conduction being enabled between the heat conducting ring and the focus ring. The plasma processing apparatus can adjust polymers distribution in the edge area of the to-be-processed substrate.

Plasma processing device

The invention provides a plasma processing device. The plasma processing device comprises a reaction cavity, an upper electrode and a lower electrode, a radio frequency power supply is connected with the lower electrode via a radio frequency cable and outputs a fundamental wave radio frequency power to the lower electrode so that a capacitance coupling electric field is generated between the upper electrode and the lower electrode and plasma is generated, a static clamping disc is arranged above the lowerelectrode and is used for fixing a substrate to be processed, the substrate is processed by plasma, a shielding plate is arranged below a bottom wall of the reaction cavity and is electrically connected with ground, the radio frequency cable is encircled by the shielding plate, and a dielectric material is annularly arranged between the radio frequency cable and the shielding plate.

Plasma processor moving ring cleanness maintaining system and method capable of rapidly removing contaminant on moving ring surface and in gap to achieve surface cleaning

The present invention discloses a moving ring cleanness maintaining system, which may prevent the polymer deposition on the surfaces at the bottom and outer wall of the moving ring in the plasma processor during plasma processing. The moving ring cleanness maintaining system comprises: a supersonic converter mounted in the moving ring; and a supersonic generator having its output connected with the supersonic converter. The present invention has the advantage that the high-frequency oscillation signal generated by the supersonic generator may be converted into high-frequency mechanical oscillation by the converter and be propagated and evenly radiated to the solid medium of the moving ring, such that the contaminant on the surface of moving ring and in the gap may be rapidly removed to achieve the purpose of surface cleaning.

Plasma processor and etching uniformity adjusting system and method

The invention discloses an etching uniformity adjusting system. The system comprises feedback adjusting devices and a calculation control unit connected to the feedback adjusting devices; each feedback adjusting device comprises a current monitor and an active elevator; the current monitor is mounted between a limiting ring and a grounding ring of a plasma reaction chamber, and is connected with the calculation control unit; and the active elevator is mounted between the limiting ring and the grounding ring of the plasma reaction chamber and positioned in a position corresponding to the current monitor; and the current monitors obtain the current distribution magnitude of different areas between the limiting ring and the grounding ring so that the calculation control unit adjusts a gap between the limiting ring and the grounding ring. The processor, system and method have the advantages that real-time active feedback control of the plasma uniformity can be realized due to cooperation of ...

Plasma processing device and adjusting method thereof

The invention discloses a plasma processing device and an adjusting method thereof. The plasma processing device comprises a processing cavity, a base, an electrostatic chuck, a focusing ring, a heat conduction ring and an expandable member, wherein the base is positioned at the bottom in the processing cavity; the electrostatic chuck is located on the base and used for bearing and adsorbing a to-be-processed substrate; the focusing ring surrounds the electrostatic chuck; the heat conduction ring is located below the focusing ring and surrounds the base; and the expandable member is fixed to the bottom of the processing cavity and is connected with the heat conduction ring, the expandable member includes a material having a high coefficient of thermal expansion, a first fluid groove is formed in the expandable member and used for containing first fluid, the expandable member can be expanded and contracted by changing the temperature of the first fluid, and the height of the focusing ring ...