GAS DELIVERY APPARATUS FOR PROCESS EQUIPMENT

A method of preparing an aluminum tube for use as a gas line includes plating a nickel alloy throughout internal surfaces of the aluminum tube, to form the gas line. A gas line for transport of gases includes an aluminum tube with a nickel alloy coating throughout internal surfaces of the tube. A plasma processing apparatus includes at least two process chambers for exposing a workpiece to a plasma, and a gas line that supplies, from one or more inlet ports, one or more gases for generating the plasma to two outlet ports. Each of the two outlet ports interfaces to a respective one of the process chambers, and the gas line includes an aluminum tube with a nickel alloy coated internal surface. 1. A method of preparing an aluminum tube for use as a gas line , the method comprising:plating a nickel alloy throughout internal surfaces of the aluminum tube, to form the gas line.2. The method of claim 1 , wherein plating the nickel alloy comprises plating the nickel alloy to a thickness in the range of 0.0010 to 0.0012 inches.3. The method of claim 1 , wherein plating the nickel alloy comprises flowing an electroless nickel plating solution through the aluminum tube claim 1 , the electroless nickel plating solution providing the nickel alloy with a phosphorous concentration in the range of 10 to 12 percent.4. The method of claim 1 , further comprising plating a nickel alloy on external surfaces of the aluminum tube.5. The method of claim 4 , wherein plating the nickel alloy on the external surfaces of the aluminum tube comprises plating the nickel alloy using an electroless nickel plating solution.6. The method of claim 4 , wherein plating the nickel alloy on the external surfaces of the aluminum tube comprises plating the nickel alloy using electrolytic nickel plating.7. The method of claim 1 , further comprising coupling aluminum components to form the aluminum tube.8. The method of claim 1 , further comprising cleaning the internal surfaces before plating the nickel ...

Grooved insulator to reduce leakage current

A plasma source includes a first electrode and a second electrode having respective surfaces, and an insulator that is between and in contact with the electrodes. The electrode surfaces and the insulator surface substantially define a plasma cavity. The insulator surface defines one or more grooves configured to prevent deposition of material in a contiguous form on the insulator surface. A method of generating a plasma includes introducing one or more gases into a plasma cavity defined by a first electrode, a surface of an insulator that is in contact with the first electrode, and a second electrode that faces the first electrode. The insulator surface defines one or more grooves where portions of the insulator surface are not exposed to a central region of the cavity. The method further includes providing RF energy across the first and second electrodes to generate the plasma within the cavity.

SEMICONDUCTOR CHAMBER APPARATUS FOR DIELECTRIC PROCESSING

Systems and chambers for processing dielectric films on substrates are described. Vertical combo chambers include two separate processing chambers vertically arranged in a processing stack. A top processing chamber is configured to process the substrate at relatively low substrate temperature. A robot is configured to remove a substrate from the top processing chamber and change height before placing the substrate in a bottom processing chamber. The bottom processing chamber is configured to anneal the substrate to further process the dielectric film. The vertical stacking increases the number of processing chambers which can be included on a single processing system. The separation of the bottom (annealing or curing) chamber and the top chamber allows the top chamber to remain at a low temperature which hastens the start of a process conducted on a new wafer transferred into the top chamber. This configuration of vertical-combo chamber can be used for depositing a dielectric film in the top chamber and then curing the film in the bottom chamber. The configuration is also helpful for dielectric removal processes which create solid residue, in which case the bottom chamber is used to sublimate the solid residue. The separation limits or substantially eliminates the amount of solid residue which accumulates in the top chamber. Simultaneous processing, thermal separation and contamination control afforded by the design of the vertical combo chambers improve the throughput of a processing system. 1. A substrate processing system comprising:a remote plasma system configured to receive an upper-chamber precursor and to form a plasma from the upper-chamber precursor to produce plasma effluents; a gas distribution assembly comprising a showerhead,', 'an upper substrate processing chamber configured to receive and then support an upper substrate on an upper pedestal during an upper-chamber process, wherein the upper substrate processing chamber is further configured to ...

Grooved insulator to reduce leakage current

A plasma source includes a first electrode and a second electrode having respective surfaces, and an insulator that is between and in contact with the electrodes. The electrode surfaces and the insulator surface substantially define a plasma cavity. The insulator surface defines one or more grooves configured to prevent deposition of material in a contiguous form on the insulator surface. A method of generating a plasma includes introducing one or more gases into a plasma cavity defined by a first electrode, a surface of an insulator that is in contact with the first electrode, and a second electrode that faces the first electrode. The insulator surface defines one or more grooves where portions of the insulator surface are not exposed to a central region of the cavity. The method further includes providing RF energy across the first and second electrodes to generate the plasma within the cavity.

PROCESS WINDOW WIDENING USING COATED PARTS IN PLASMA ETCH PROCESSES

Embodiments of the present technology may include a method of etching. The method may include mixing plasma effluents with a gas in a first section of a chamber to form a first mixture. The method may also include flowing the first mixture to a substrate in a second section of the chamber. The first section and the second section may include nickel plated material. The method may further include reacting the first mixture with the substrate to etch a first layer selectively over a second layer. In addition, the method may include forming a second mixture including products from reacting the first mixture with the substrate. 1. A method of etching , the method comprising:mixing plasma effluents with a gas in a first section of a chamber to form a first mixture;flowing the first mixture to a substrate in a second section of the chamber;reacting the first mixture with the substrate to etch a first layer selectively over a second layer; 'the first section and the second section of the chamber comprise nickel plated material.', 'forming a second mixture comprising products from reacting the first mixture with the substrate, wherein2. The method of claim 1 , wherein:the first mixture flows in a path in the chamber from the first section to the second section, andthe path is defined by nickel plated parts of the chamber.3. The method of claim 1 , wherein:the first layer is a thermal silicon oxide layer,the second layer is a silicon layer, andreacting the first mixture with the substrate comprises etching less than 1 Angstrom of the second layer and greater than 50 Angstroms of the second layer.4. The method of claim 1 , wherein the second section of the chamber is at a pressure of 10 Torr or lower.5. The method of claim 1 , wherein the plasma effluents comprise effluents from flowing ammonia and a fluorine-containing gas through a plasma.6. The method of claim 5 , wherein the fluorine-containing gas comprises NFor HF.7. The method of claim 1 , wherein the plasma effluents ...

MULTIPLE CHANNEL SHOWERHEADS

Exemplary semiconductor showerheads may include a first plate characterized by a first surface in which a plurality of first apertures are defined, and further characterized by a second surface opposite the first surface and from which extends a plurality of annular members. Each annular member of the plurality of annular members may extend from a separate first aperture of the plurality of first apertures. A channel may be defined by each first aperture and corresponding annular member. The showerheads may also include a second plate coupled with the first plate and characterized by a first surface facing the first plate and a second surface opposite the first surface. A plurality of second apertures may be defined through the second plate within an internal area of the second plate. Each annular member of the plurality of annular members may extend within a separate second aperture of the plurality of second apertures. 1. A semiconductor processing chamber showerhead comprising:a first plate characterized by a first surface in which a plurality of first apertures are defined, further characterized by a second surface opposite the first surface and from which second surface extend a plurality of annular members, each annular member of the plurality of annular members extending from a separate first aperture of the plurality of first apertures, wherein a channel is defined by each first aperture and corresponding annular member; anda second plate coupled with the first plate, wherein the second plate is characterized by a first surface facing the first plate and a second surface opposite the first surface, wherein a plurality of second apertures are defined through the second plate within an internal area of the second plate, and wherein each annular member of the plurality of annular members extends within a separate second aperture of the plurality of second apertures.2. The semiconductor processing chamber showerhead of claim 1 , wherein each annular member of ...

SYSTEMS AND METHODS FOR IMPROVED SEMICONDUCTOR ETCHING AND COMPONENT PROTECTION

Semiconductor systems and methods may include a semiconductor processing chamber having a gas box defining an access to the semiconductor processing chamber. The chamber may include a spacer characterized by a first surface with which the gas box is coupled, and the spacer may define a recessed ledge on an interior portion of the first surface. The chamber may include a support bracket seated on the recessed ledge that extends along a second surface of the spacer. The chamber may also include a gas distribution plate seated on the support bracket. 1. A semiconductor processing system comprising: a first gasbox plate characterized by a first surface and a second surface opposite the first surface, and', 'a second gasbox plate coupled with the first gasbox plate along the second surface of the first gasbox plate, wherein the second gasbox plate is characterized by a first surface and a second surface opposite the first surface, wherein the second gasbox plate defines a plurality of channels within the first surface of the second gasbox plate, and wherein the second surface of the first gasbox plate and the first surface of the second gasbox plate define a flow path through the plurality of channels., 'a gasbox comprising2. The semiconductor processing system of claim 1 , wherein the gasbox defines a central aperture configured to receive a delivery tube.3. The semiconductor processing system of claim 1 , wherein the plurality of channels are in fluid communication with one another to define a compound channel extending radially outward along the gasbox.4. The semiconductor processing system of claim 1 , wherein the first gasbox plate defines a port extending through the first gasbox plate.5. The semiconductor processing system of claim 4 , wherein the port provides fluid access to the plurality of channels defined in the first surface of the second gasbox plate.6. The semiconductor processing system of claim 4 , wherein the port is configured to provide fluid access ...

CERAMIC SHOWERHEADS WITH CONDUCTIVE ELECTRODES

Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel. 1. A semiconductor processing chamber showerhead comprising:a plate comprising a first dielectric material, the plate characterized by a first surface and a second surface opposite the first surface, wherein the plate defines a plurality of apertures through the plate;a conductive material disposed on the first surface of the plate, wherein the conductive material is maintained at a first radial distance from each aperture of the plurality of apertures; anda coating comprising a second dielectric material, wherein the coating extends across the conductive material, and wherein the coating is maintained at a second radial distance from each aperture of the plurality of apertures, wherein the second radial distance is less than the first radial distance.2. The semiconductor processing chamber showerhead of claim 1 , wherein the conductive material is exposed at a radial edge of the showerhead to provide electrical coupling of the showerhead.3. The semiconductor processing chamber showerhead of claim 2 , wherein the showerhead defines an annular channel in the first surface of the plate radially outward of the ...

CERAMIC SHOWERHEADS WITH CONDUCTIVE ELECTRODES

Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel. 1. A semiconductor processing chamber showerhead comprising:a dielectric plate characterized by a first surface and a second surface opposite the first surface, wherein the dielectric plate defines a plurality of apertures through the dielectric plate, wherein the dielectric plate defines a first annular channel in the first surface of the dielectric plate, the first annular channel extending about the plurality of apertures, and wherein the dielectric plate defines a second annular channel in the first surface of the dielectric plate, the second annular channel formed radially outward from the first annular channel; anda conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures, wherein the conductive material is exposed at the second annular channel.2. The semiconductor processing chamber showerhead of claim 1 , wherein the second annular channel is defined within the dielectric plate to a greater depth than the first annular channel.3. The semiconductor processing chamber showerhead of claim 2 , wherein the conductive ...

PROCESS WINDOW WIDENING USING COATED PARTS IN PLASMA ETCH PROCESSES

Embodiments of the present technology may include a method of etching. The method may include mixing plasma effluents with a gas in a first section of a chamber to form a first mixture. The method may also include flowing the first mixture to a substrate in a second section of the chamber. The first section and the second section may include nickel plated material. The method may further include reacting the first mixture with the substrate to etch a first layer selectively over a second layer. In addition, the method may include forming a second mixture including products from reacting the first mixture with the substrate. 1. A semiconductor processing system , the system comprising:a remote plasma region;a processing region fluidly coupled with the remote plasma region by a channel; and the gas inlet defines a flow path for a gas that does not pass through the remote plasma region before entering the processing region,', 'the processing region comprises a pedestal configured to support a substrate,', 'the processing region is at least partially defined by a sidewall and a showerhead, and', 'the sidewall and showerhead are plated with nickel., 'a gas inlet fluidly coupled to the channel, wherein2. The system of claim 1 , wherein the processing region from the channel claim 1 , but not including the channel claim 1 , to an exit from the processing region to a pump is defined by surfaces plated with nickel.3. The system of claim 1 , further comprising an annulus disposed on the circumference of the pedestal claim 1 , wherein the annulus is plated with nickel. This application is a divisional of U.S. application Ser. No. 15/670,919, filed Aug. 7, 2017, and which is hereby incorporated by reference in its entirety for all purposes.The present technology relates to semiconductor processes and equipment. More specifically, the present technology relates to improving process selectivity during low pressure etching operations.Integrated circuits are made possible by ...

SEMICONDUCTOR CHAMBER COATINGS AND PROCESSES

Systems and methods may be used to produce coated components. Exemplary chamber components may include an aluminum, stainless steel, or nickel plate defining a plurality of apertures. The plate may include a hybrid coating, and the hybrid coating may include a first layer comprising a corrosion resistant coating. The first layer may extend conformally through each aperture of the plurality of apertures. The hybrid coating may also include a second layer comprising an erosion resistant coating extending across a plasma-facing surface of the semiconductor chamber component. 1. A semiconductor chamber component comprising:an aluminum, stainless steel, or nickel plate defining a plurality of apertures, wherein: a first layer comprising a corrosion resistant coating, wherein the first layer extends conformally through each aperture of the plurality of apertures, and', 'a second layer comprising an erosion resistant coating extending across a plasma-facing surface of the semiconductor chamber component., 'the plate includes a hybrid coating, the hybrid coating comprising2. The semiconductor chamber component of claim 1 , wherein the first layer comprises an anodization claim 1 , electroless nickel plating claim 1 , electroplated nickel claim 1 , aluminum oxide claim 1 , or barium titanate.3. The semiconductor chamber component of claim 2 , wherein the first layer is characterized by a thickness of less than or about 25 μm.4. The semiconductor chamber component of claim 1 , wherein the second layer comprises yttrium oxide.5. The semiconductor chamber component of claim 4 , wherein the second layer is characterized by a thickness of less than or about 25 μm.6. The semiconductor chamber component of claim 4 , wherein the second layer further includes aluminum or zirconium within the yttrium oxide.7. The semiconductor chamber component of claim 1 , wherein surfaces of the plate are textured to a depth of at least about 1 μm.8. The semiconductor chamber component of claim 1 , ...

Two piece electrode assembly with gap for plasma control

An apparatus for distributing plasma products includes first and second electrodes that each include planar surfaces. The first electrode forms first apertures from a first planar surface to a second planar surface; the second electrode forms second apertures from the third planar surface to the fourth planar surface. The electrodes couple through one or more adjustable couplers such that the third planar surface is disposed adjacent to the second planar surface with a gap therebetween, the gap having a gap distance. Each of the adjustable couplers has a range of adjustment. The first and second apertures are arranged such that for at least one position within the ranges of adjustment, none of the first apertures aligns with any of the second apertures to form an open straight-line path extending through both the first and second electrodes, and the gap distance is between 0.005 inch and 0.050 inch.

SYSTEMS AND METHODS FOR IMPROVED SEMICONDUCTOR ETCHING AND COMPONENT PROTECTION

Semiconductor systems and methods may include a semiconductor processing chamber having a gas box defining an access to the semiconductor processing chamber. The chamber may include a spacer characterized by a first surface with which the gas box is coupled, and the spacer may define a recessed ledge on an interior portion of the first surface. The chamber may include a support bracket seated on the recessed ledge that extends along a second surface of the spacer. The chamber may also include a gas distribution plate seated on the support bracket. 1. A semiconductor processing chamber comprising:a gas box defining an access to the semiconductor processing chamber;a spacer characterized by a first surface with which the gas box is coupled, wherein the spacer defines a recessed ledge on an interior portion of the first surface;a support bracket seated on the recessed ledge and extending along a second surface of the spacer; anda gas distribution plate seated on the support bracket.2. The semiconductor processing chamber of claim 1 , further comprising an annular liner contacting the gas distribution plate and extending about a surface of the support bracket.3. The semiconductor processing chamber of claim 2 , further comprising a top plate seated on the annular liner and positioned proximate a surface of the gas box.4. The semiconductor processing chamber of claim 3 , wherein the gas distribution plate claim 3 , the annular liner claim 3 , and the top plate comprise quartz claim 3 , a ceramic claim 3 , or coated aluminum.5. The semiconductor processing chamber of claim 1 , wherein the support bracket and the spacer at least partially comprise hard anodized aluminum or coated aluminum.6. The semiconductor processing chamber of claim 1 , further comprising a pedestal configured to support a semiconductor substrate claim 1 , wherein the pedestal comprises a ceramic heater configured to heat the semiconductor substrate to between about 300° C. and 500° C.7. The ...

SYSTEMS AND METHODS FOR IMPROVED SEMICONDUCTOR ETCHING AND COMPONENT PROTECTION

Semiconductor systems and methods may include a semiconductor processing chamber having a gas box defining an access to the semiconductor processing chamber. The chamber may include a spacer characterized by a first surface with which the gas box is coupled, and the spacer may define a recessed ledge on an interior portion of the first surface. The chamber may include a support bracket seated on the recessed ledge that extends along a second surface of the spacer. The chamber may also include a gas distribution plate seated on the support bracket. 1. A semiconductor processing system comprising:a remote plasma source;a delivery tube coupled with the remote plasma source; and a gas box coupled about a distal region of the delivery tube,', 'a first annular support contacting the gas box at a first surface of the first annular support, wherein the first annular support and the gas box together define a first channel about an interior region of the semiconductor processing chamber, and', 'a gas distribution plate seated within the first channel., 'a semiconductor processing chamber, wherein the semiconductor processing chamber comprises2. The semiconductor processing system of claim 1 , further comprising:an annular liner seated on the gas distribution plate; anda top plate seated on the annular liner, wherein the annular liner and the top plate are both at least partially seated within the first channel.3. The semiconductor processing system of claim 1 , further comprising a second annular support contacting the first annular support at a second surface of the first annular support opposite the first surface of the first annular support claim 1 , wherein the second annular support and the first annular support together define a second channel about an interior region of the semiconductor processing chamber.4. The semiconductor processing system of claim 3 , further comprising a second gas distribution plate seated within the second channel.5. The semiconductor ...

TWO PIECE ELECTRODE ASSEMBLY WITH GAP FOR PLASMA CONTROL

An apparatus for distributing plasma products includes first and second electrodes that each include planar surfaces. The first electrode forms first apertures from a first planar surface to a second planar surface; the second electrode forms second apertures from the third planar surface to the fourth planar surface. The electrodes couple through one or more adjustable couplers such that the third planar surface is disposed adjacent to the second planar surface with a gap therebetween, the gap having a gap distance. Each of the adjustable couplers has a range of adjustment. The first and second apertures are arranged such that for at least one position within the ranges of adjustment, none of the first apertures aligns with any of the second apertures to form an open straight-line path extending through both the first and second electrodes. 1. An apparatus for distributing plasma products , comprising:a first electrode characterized by a first surface and a second surface opposite the first surface, wherein the first electrode defines a plurality of first apertures extending therethrough;a second electrode characterized by a first surface facing the second surface of the first electrode and a second surface opposite the first surface of the second electrode, wherein the second electrode defines a plurality of second apertures extending therethrough, wherein a gap distance is formed between the first electrode and the second electrode; andone or more adjustable couplers operable to adjust one or more of translation or rotation of the first electrode with respect to the second electrode.2. The apparatus of claim 1 , wherein the one or more adjustable couplers are adjustable using a hand tool claim 1 , but are not operably coupled with actuators.3. The apparatus of claim 1 , wherein the one or more adjustable couplers are actuators that activate in response to electronic input.4. The apparatus of claim 1 , further comprising one or more RF grounding straps that ...

SEMICONDUCTOR PROCESSING CHAMBER FOR IMPROVED PRECURSOR FLOW

Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define an opening to a central channel at the first end, and the central channel may be characterized by a first cross-sectional surface area. The adapter may define an exit from a second channel at the second end, and the adapter may define a transition between the central channel and the second channel within the adapter between the first end and the second end. The adapter may define a third channel between the transition and the second end of the adapter, and the third channel may be fluidly isolated from the central channel and the second channel. 1. A semiconductor processing system comprising:a processing chamber;a remote plasma unit coupled with the processing chamber; andan adapter coupled with the remote plasma unit, wherein the adapter comprises a first end and a second end opposite the first end, wherein the adapter defines an opening to a central channel at the first end, wherein the central channel is characterized by a first cross-sectional surface area, wherein the adapter defines an exit from a second channel at the second end, wherein the adapter defines a transition between the central channel and the second channel within the adapter between the first end and the second end, wherein the adapter defines a third channel between the transition and the second end of the adapter, and wherein the third channel is fluidly isolated from the central channel and the second channel within the adapter.2. The semiconductor processing system of claim 1 , wherein the second channel is characterized by a second cross-sectional area less than the first cross-sectional area.3. The semiconductor processing system of claim 1 , wherein the second ...

MULTIPLE POINT GAS DELIVERY APPARATUS FOR ETCHING MATERIALS

Implementations of the present disclosure relate to an electrode assembly for a processing chamber. In one implementation, the electrode assembly includes a cathode electrode having an inner volume and a ground anode electrode spaced apart from the cathode electrode. A first etchant gas is introduced through the cathode electrode and into the inner volume. The first etchant gas is ionized within the inner volume. The ionized first etchant gas is filtered to allow only radicals to flow from the inner volume into a mixing volume formed within the ground anode electrode. The mixing volume is separated from the inner volume by a gas injection ring. The radicals from the first etchant gas are mixed and reacted with a second etchant gas in molecular phase, which is introduced through the ground anode electrode into a sidewall of the gas injection ring before entering the mixing volume in an evenly distributed manner. 1. An electrode assembly , comprising:a cathode electrode having an upper side, a lower side, and an inner volume open at the lower side, wherein the cathode electrode and the inner volume are substantially symmetric about a central axis extending from the upper side to the lower side;a first gas channel formed through the cathode electrode and open to the inner volume;a ground anode electrode disposed opposing the cathode electrode, the ground anode electrode has a recessed portion and an opening defining a mixing volume beneath the recessed portion, and the recessed portion and the opening are disposed symmetric about the central axis; anda gas injection ring disposed within the recessed portion, wherein the gas injection ring has one or more apertures disposed around a circumference of the gas injection ring, and the one or more apertures are open to the mixing volume.2. The electrode assembly of claim 1 , wherein the first gas channel is in fluid communication with a first gas source claim 1 , and the first gas source provides a first etchant gas in ...

CHAMBER APPARATUS FOR CHEMICAL ETCHING OF DIELECTRIC MATERIALS

Implementations of the disclosure generally provide an improved pedestal heater for a processing chamber. The pedestal heater includes a temperature-controlled plate having a first surface and a second surface opposing the first surface. The temperature-controlled plate includes an inner zone comprising a first set of heating elements, an outer zone comprising a second set of heating elements, the outer zone surrounding the inner zone, and a continuous thermal choke disposed between the inner zone and the outer zone, and a substrate receiving plate having a first surface and a second surface opposing the first surface, the second surface of the substrate receiving plate is coupled to the first surface of the temperature-controlled plate. The continuous thermal choke enables a very small temperature gradient to be created and manipulated between the inner zone and the outer zone, allowing center-fast or edge-fast etching profile to achieve on a surface of the substrate. 1. A pedestal heater for a processing chamber , comprising: a first zone comprising a first set of heating elements;', 'a second zone comprising a second set of heating elements, the second zone surrounding the first zone; and', 'a continuous annular thermal choke disposed between the first zone and the second zone; and, 'a temperature-controlled plate having a first surface and a second surface opposing the first surface, comprisinga substrate receiving plate having a first surface and a second surface opposing the first surface, the second surface of the substrate receiving plate is coupled to the first surface of the temperature-controlled plate.2. The pedestal heater of claim 1 , wherein the first zone covers the majority of the temperature-controlled plate around its central region.3. The pedestal heater of claim 1 , wherein the thermal choke is a groove formed in the second surface of the temperature-controlled plate claim 1 , leaving a thin bridge contiguously and integrally connecting the ...

Ceramic showerheads with conductive electrodes

Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel.

Apparatus for etching semiconductor wafers

A wafer pedestal of a semiconductor apparatus is provided. The wafer pedestal is capable of supporting a substrate. The wafer pedestal includes a pedestal having at least one purge opening configured to flow a purge gas and at least one chucking opening configured to chuck the substrate over the pedestal. The pedestal includes a sealing band disposed between the at least one purge opening and the at least one chucking opening. The sealing band is configured to support the substrate.

Ceramic showerheads with conductive electrodes

Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel.

Systems and methods for improved semiconductor etching and component protection

Semiconductor systems and methods may include a semiconductor processing chamber having a gas box defining an access to the semiconductor processing chamber. The chamber may include a spacer characterized by a first surface with which the gas box is coupled, and the spacer may define a recessed ledge on an interior portion of the first surface. The chamber may include a support bracket seated on the recessed ledge that extends along a second surface of the spacer. The chamber may also include a gas distribution plate seated on the support bracket.

Ceramic showerheads with conductive electrodes

Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel.

Two piece electrode assembly with gap for plasma control

An apparatus for distributing plasma products includes first and second electrodes that each include planar surfaces. The first electrode forms first apertures from a first planar surface to a second planar surface; the second electrode forms second apertures from the third planar surface to the fourth planar surface. The electrodes couple through one or more adjustable couplers such that the third planar surface is disposed adjacent to the second planar surface with a gap therebetween, the gap having a gap distance. Each of the adjustable couplers has a range of adjustment. The first and second apertures are arranged such that for at least one position within the ranges of adjustment, none of the first apertures aligns with any of the second apertures to form an open straight-line path extending through both the first and second electrodes.

Methods for fabricating faceplate of semiconductor apparatus

Methods for fabricating faceplate of semiconductor apparatus

A method for manufacturing a faceplate of a semiconductor apparatus is provided. The method includes selecting a size of a tool in response to a predetermined specification of a predetermined gas parameter. The tool is used to form the holes within the faceplate. A first gas parameter of the holes of the faceplate is measured by an apparatus to determine if the measured first gas parameter of the holes of the faceplate is within the predetermined specification.

Methods for fabricating faceplate of semiconductor apparatus

A method for manufacturing a faceplate of a semiconductor apparatus is provided. The method includes selecting a size of a tool in response to a predetermined specification of a predetermined gas parameter. The tool is used to form the holes within the faceplate. A first gas parameter of the holes of the faceplate is measured by an apparatus to determine if the measured first gas parameter of the holes of the faceplate is within the predetermined specification.

Two piece electrode assembly with gap for plasma control

An apparatus for distributing plasma products includes first and second electrodes that each include planar surfaces. The first electrode forms first apertures from a first planar surface to a second planar surface; the second electrode forms second apertures from the third planar surface to the fourth planar surface. The electrodes couple through one or more adjustable couplers such that the third planar surface is disposed adjacent to the second planar surface with a gap therebetween, the gap having a gap distance. Each of the adjustable couplers has a range of adjustment. The first and second apertures are arranged such that for at least one position within the ranges of adjustment, none of the first apertures aligns with any of the second apertures to form an open straight-line path extending through both the first and second electrodes, and the gap distance is between 0.005 inch and 0.050 inch.

Multiple point gas delivery apparatus for etching materials

Implementations of the present disclosure relate to an electrode assembly for a processing chamber. In one implementation, the electrode assembly includes a cathode electrode having an inner volume and a ground anode electrode spaced apart from the cathode electrode. A first etchant gas is introduced through the cathode electrode and into the inner volume. The first etchant gas is ionized within the inner volume. The ionized first etchant gas is filtered to allow only radicals to flow from the inner volume into a mixing volume formed within the ground anode electrode. The mixing volume is separated from the inner volume by a gas injection ring. The radicals from the first etchant gas are mixed and reacted with a second etchant gas in molecular phase, which is introduced through the ground anode electrode into a sidewall of the gas injection ring before entering the mixing volume in an evenly distributed manner.