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Применить Всего найдено 4. Отображено 4.
07-12-1999 дата публикации

Substrate having uniform tungsten silicide film and method of manufacture

Номер: US0005997950A1
Автор: Telford; Susan G., Tseng; Meng Chu, Aruga; Michio, Rinnen; Klaus-Dieter
Принадлежит: Applied Materials, Inc.

A tungsten silicide film is deposited on a substrate from a premixed deposition gas mixture comprising: (i) silicon source gas, such as SiCl2 H2 and (ii) tungsten source gas, such as WF6. A seeding gas, such as silane, is used during the initial deposition stages to deposit a substantially uniform interfacial WSix layer on the substrate, so that the tungsten to silicon ratio of the WSix layer is substantially uniform through the thickness of the WSix film. An apparatus for performing the process is also described.

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Номер записи: 1
01-07-1997 дата публикации

Uniform tungsten silicide films produced by chemical vapor depostiton

Номер: US0005643633A1
Автор: Telford; Susan G., Tseng; Meng Chu, Aruga; Michio, Eizenberg; Moshe
Принадлежит: Applied Materials, Inc.

A tungsten silicide film is deposited from WF6 and SiCl2 H2 onto a substrate so that the tungsten to silicon ratio is substantially uniform through the thickness of the WSix film, and the WSix film is substantially free of fluorine. The film can be deposited by a multi-stage process where the pressure in the chamber is varied, or by a high temperature, high pressure deposition process in a plasma cleaned deposition chamber. Preferably the SiCl2 H2 and the WF6 are mixed upstream of the deposition chamber. A seeding gas can be added to the process gases.

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Номер записи: 2
19-03-1996 дата публикации

Uniform tungsten silicide films produced by chemical vapor deposition

Номер: US0005500249A1
Автор: Telford; Susan G., Tseng; Meng C., Aruga; Michio
Принадлежит: Applied Materials, Inc.

A tungsten silicide film is deposited from WF6 and SiCl2 H2 onto a substrate so that the tungsten to silicon ratio is substantially uniform through the thickness of the WSix film, and the WSix film is substantially free of fluorine. The film can be deposited by a multi-stage process where the pressure in the chamber is varied, or by a high temperature, high pressure deposition process in a plasma cleaned deposition chamber. Preferably the SiCl2 H2 and the WF6 are mixed upstream of the deposition chamber. A seeding gas can be added to the process gases.

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Номер записи: 3
24-09-1996 дата публикации

Uniform tungsten silicide films produced by chemical vapor deposition

Номер: US0005558910A1
Автор: Telford; Susan G., Tseng; Meng C., Aruga; Michio, Eizenberg; Moshe
Принадлежит: Applied Materials, Inc.

A tungsten silicide film is deposited from WF6 and SiCl2 H2 onto a substrate so that the tungsten to silicon ratio is substantially uniform through the thickness of the WSix film, and the WSix film is substantially free of fluorine. The film can be deposited by a multi-stage process where the pressure in the chamber is varied, or by a high temperature, high pressure deposition process in a plasma cleaned deposition chamber. Preferably the SiCl2 H2 and the WF6 are mixed upstream of the deposition chamber. A seeding gas can be added to the process gases.

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Номер записи: 4