28-02-2013 дата публикации
Номер: US20130048063A1
Автор:
Abell Joshua,
Adams Jessica,
Chan Ngai,
Cress Cory,
Ekins-Daukes Nicholas,
Gonzalez Maria,
Jenkins Phillip,
Lumb Matthew P.,
Meyer Jerry R.,
Stavrinou Paul,
Tischler Joseph G.,
Vurgaftman Igor,
Walters Robert J.,
Yakes Michael K.
A multijunction (MJ) solar cell grown on an InP substrate using materials that are lattice-matched to InP. In an exemplary three-junction embodiment, the top cell is formed from InAlAsSb(with x and y adjusted so as to achieve lattice-matching with InP, hereafter referred to as InAlAsSb), the middle cell from InGaAlAs (with a and b adjusted so as to achieve lattice-matching with InP, hereafter referred to as InGaAlAs), and the bottom cell also from InGaAlAs, but with a much lower Al composition, which in some embodiments can be zero so that the material is InGaAs. Tunnel junctions (TJs) connect the junctions and allow photo-generated current to flow. In an exemplary embodiment, an InAlAsSb TJ connects the first and second junctions, while an InGaAlAs TJ connects the second and third junctions. 1. A solar cell , comprising:a heterostructure formed on a substrate from materials lattice-matched to the substrate, the heterostructure being configured to form a top cell, a bottom cell, and at least one middle cell situated between the top and bottom cells, each cell comprising a corresponding p-n junction and being separated from an adjacent cell by a corresponding tunnel junction, a material forming each of the substrate and the top, bottom, and middle cells having an associated band gap;wherein the material for the substrate and each of the top, bottom, and middle cells is configured based on an evaluation of its ability to optimize an overall band gap configuration of the solar cell and maximize its conversion efficiency while minimizing radiative efficiency.2. The solar cell according to claim 1 , wherein the substrate comprises one of GaAs claim 1 , InP claim 1 , InAs claim 1 , and GaSb.3. The solar cell according to claim 1 , wherein the top cell is configured to have a band gap of between about 1.6 and about 1.9 eV.4. The solar cell according to claim 2 , wherein the top cell comprises wherein the top cell is composed of an InAlAsSballoy where x and y are adjusted ...
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