Semiconductor device and method for manufacturing the same

Stable electrical characteristics and high reliability are provided for a miniaturized semiconductor device including an oxide semiconductor, and the semiconductor device is manufactured. The semiconductor device includes a base insulating layer; an oxide stack which is over the base insulating layer and includes an oxide semiconductor layer; a source electrode layer and a drain electrode layer over the oxide stack; a gate insulating layer over the oxide stack, the source electrode layer, and the drain electrode layer; a gate electrode layer over the gate insulating layer; and an interlayer insulating layer over the gate electrode layer. In the semiconductor device, the defect density in the oxide semiconductor layer is reduced.

Antibodies Specific for TGF-Beta

The present disclosure relates, in general, to materials and methods for antibodies specific for transforming growth factor beta (TGFβ), including TGFβ1, TGFβ2 and TGFβ3, and uses of these antibodies in the treatment of subjects having cancer, an eye disease, condition or disorder, fibrosis, including ophthalmic fibrosis or fibrosis of the eye, and other conditions or disorders related to TGFβ expression.

Semiconductor device and method for manufacturing semiconductor device

A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.

Cobalt schiff base compounds

Semiconductor device and electronic device including the semiconductor device

A semiconductor device includes a first oxide semiconductor film, a second oxide semiconductor film over the first oxide semiconductor film, a source electrode in contact with the second oxide semiconductor film, a drain electrode in contact with the second oxide semiconductor film, a metal oxide film over the second oxide semiconductor film, the source electrode, and the drain electrode, a gate insulating film over the metal oxide film, and a gate electrode over the gate insulating film. The metal oxide film contains M (M represents Ti, Ga, Y, Zr, La, Ce, Nd, or Hf) and Zn. The metal oxide film includes a portion where x/(x+y) is greater than 0.67 and less than or equal to 0.99 when a target has an atomic ratio of M:Zn=x:y.

Cobalt schiff base compounds

SINGLE-LAYER AND MULTILAYER GRAPHENE, METHOD OF MANUFACTURING THE SAME, OBJECT INCLUDING THE SAME, AND ELECTRIC DEVICE INCLUDING THE SAME

Graphene is formed with a practically uniform thickness on an uneven object. The object is immersed in a graphene oxide solution, and then taken out of the solution and dried; alternatively, the object and an electrode are immersed therein and voltage is applied between the electrode and the object used as an anode. Graphene oxide is negatively charged, and thus is drawn to and deposited on a surface of the object, with a practically uniform thickness. After that, the object is heated in vacuum or a reducing atmosphere, so that the graphene oxide is reduced to be graphene. In this manner, a graphene layer with a practically uniform thickness can be formed even on a surface of the uneven object. 1. An object comprising:an uneven surface; andone or a plurality of graphene layers over the uneven surface.2. The object according to claim 1 , further comprising a plurality of whiskers claim 1 , wherein the uneven surface is formed by the plurality of whiskers.3. The object according to claim 1 , wherein a concentration of elements other than carbon and hydrogen contained in the one or the plurality of graphene layers is lower than or equal to 15 atomic %.4. A lithium-ion secondary battery comprising the object according to claim 1 , wherein the object is used as an electrode of the lithium-ion secondary battery.5. The object according to claim 2 , wherein the one or each of the plurality of graphene layers includes at least one pore.6. The object according to claim 1 , further comprising a layer comprising a material different from graphene claim 1 , the layer being provided over the one or the plurality of graphene layers.7. The object according to claim 1 , wherein the number of layers of the one or the plurality of graphene layers is 100 or less.8. The object according to claim 1 , wherein the number of layers of the one or the plurality of graphene layers is 50 or less.9. The object according to claim 2 , wherein each of the plurality of whiskers comprises silicon.10. ...

TGF-beta-specific antibodies and methods of use thereof for treatment

The present disclosure relates, in general, to materials and methods for antibodies specific for transforming growth factor beta (TGFβ), including TGFβ1, TGFβ2 and TGFβ3, and uses of these antibodies in the treatment of subjects having cancer, an eye disease, condition or disorder, fibrosis, including ophthalmic fibrosis or fibrosis of the eye, and other conditions or disorders related to TGFβ expression.

Proteins for the treatment of epithelial barrier function disorders

The disclosure relates to therapeutic proteins and pharmaceutical compositions comprising said proteins, which have utility in treating various human diseases. In particular aspects, the disclosed therapeutic proteins are useful for treating human gastrointestinal inflammatory diseases and gastrointestinal conditions associated with decreased epithelial cell barrier function or integrity. Further, the disclosed therapeutic proteins are useful for treating human inflammatory bowel disease, including inter alia, Crohn's disease and ulcerative colitis.

Parathyroid hormone receptor 1 (PTH1R) antibodies and uses thereof

The present disclosure relates, in general, human antibodies against human parathyroid hormone receptor 1 (PTH1R) and methods of use of such antibodies in the treatment of cancer, Humoral Hypercalcemia of Malignancy (HHM), or Primary Hyperparathyroidism (PHPT) and Secondary Hyperparathyroidism (SHPT) and cachexia.

Antibodies to MT-SP1 serine protease

This invention provides a novel membrane-type serine protease (designated MT-SP1) elevated expression of which is associated with cancer. In one embodiment, this invention provides a method obtaining a prognosis or of detecting or staging a cancer in an organism. The method involves providing a biological sample from the organism and detecting the level of a membrane type serine protease 1 (MT-SP1) in the sample, where an elevated level of the membrane-type serine protease, as compared to the level of the protease in a biological sample from a normal healthy organism indicates the presence or stage of the cancer.

Method for manufacturing semiconductor device

A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. One feature resides in forming an oxide semiconductor film over an oxygen-introduced insulating film, and then forming the source and drain electrodes with an antioxidant film thereunder. Here, in the antioxidant film, the width of a region overlapping with the source and drain electrodes is longer than the width of a region not overlapping with them. The transistor formed as such has less defects in the channel region, which will improve reliability of the semiconductor device.

Semiconductor element, semiconductor device, and manufacturing method of semiconductor element

To provide a semiconductor element in which generation of oxygen vacancies in an oxide semiconductor thin film can be suppressed. The semiconductor element has a structure in which, in a gate insulating film, the nitrogen content of regions which do not overlap with a gate electrode is higher than the nitrogen content of a region which overlaps with the gate electrode. A nitride film has an excellent property of preventing impurity diffusion; thus, with the structure, release of oxygen in the oxide semiconductor film, in particular, in the channel formation region, to the outside of the semiconductor element can be effectively suppressed.

MT-SP1 serine protease

This invention provides a novel membrane-type serine protease (designated MT-SP1) elevated expression of which is associated with cancer. In one embodiment, this invention provides a method obtaining a prognosis or of detecting or staging a cancer in an organism. The method involves providing a biological sample from the organism and detecting the level of a membrane type serine protease 1 (MT-SP1) in the sample, where an elevated level of the membrane-type serine protease, as compared to the level of the protease in a biological sample from a normal healthy organism indicates the presence or stage of the cancer.

Bicycle shift control device

A bicycle shift control device is provided with a shifter housing, a gear shifting mechanism, a shift operating member, and a shift switching arrangement. The gear shifting mechanism is disposed in the shifter housing with the gear shifting mechanism having a plurality of operating positions. The shift operating member is movable with respect to the shifter housing to operate the gear shifting mechanism. The shift switching arrangement includes a restricting member movably mounted with respect to the shifter housing between a non-shift restricting position and a shift restricting position. The gear shifting mechanism moves in a first set of the operating positions when the restricting member is in the non-shift restricting position, and moves in a second set of the operating positions that are different from the first set of the operating positions when the restricting member is in the shift restricting position.

Semiconductor device

Provided is a semiconductor device having a structure with which a decrease in electrical characteristics that becomes more significant with miniaturization can be suppressed. The semiconductor device includes a first oxide semiconductor film, a gate electrode overlapping with the first oxide semiconductor film, a first gate insulating film between the first oxide semiconductor film and the gate electrode, and a second gate insulating film between the first gate insulating film and the gate electrode. In the first gate insulating film, a peak appears at a diffraction angle 2θ of around 28° by X-ray diffraction. A band gap of the first oxide semiconductor film is smaller than a band gap of the first gate insulating film, and the band gap of the first gate insulating film is smaller than a band gap of the second gate insulating film.

Antibodies Specific for TGF-Beta

The present disclosure relates, in general, to materials and methods for antibodies specific for transforming growth factor beta (TGFβ), including TGFβ1, TGFβ2 and TGFβ3, and uses of these antibodies in the treatment of subjects having cancer, an eye disease, condition or disorder, fibrosis, including ophthalmic fibrosis or fibrosis of the eye, and other conditions or disorders related to TGFβ expression. 1. An isolated nucleic acid molecule comprising a nucleotide sequence that encodes an antibody that binds transforming growth factor beta (TGFβ)1 , TGFβ2 and TGFβ3 comprising:(a) a heavy chain CDR1 amino acid sequence set forth in Table 1 or SEQ ID NOs: 13, 19 and 25, or a variant thereof in which one or two amino acids have been changed;(b) a heavy chain CDR2 amino acid sequence set forth in Table 1 or SEQ ID NOs: 14, 20 and 26 that is from the same heavy chain variable region as (a), or a variant thereof in which one or two amino acids have been changed; and(c) a heavy chain CDR3 amino acid sequence set forth in Table 1 or SEQ ID NOs: 15, 21 and 27 that is from the same heavy chain variable region as (a), or a variant thereof in which one or two amino acids have been changed.2. An isolated nucleic acid molecule comprising a nucleotide sequence that encodes an antibody that binds transforming growth factor beta (TGFβ)1 , TGFβ2 and TGFβ3 comprising:(a) a heavy chain CDR1 amino acid sequence set forth in Table 1 or SEQ ID NOs: 13, 19 and 25, or a variant thereof having at least 70% identity thereto;(b) a heavy chain CDR2 amino acid sequence set forth in Table 1 or SEQ ID NOs: 14, 20 and 26 that is from the same heavy chain variable region as (a), or a variant thereof having at least 70% identity thereto; and(c) a heavy chain CDR3 amino acid sequence set forth in Table 1 or SEQ ID NOs: 15, 21 and 27 that is from the same heavy chain variable region as (a), or a variant thereof having at least 70% identity thereto.3. An isolated nucleic acid molecule comprising a ...

Semiconductor device and method for measuring current of semiconductor device

A semiconductor device in which a transistor has the characteristic of low off-state current is provided. The transistor comprises an oxide semiconductor layer having a channel region whose channel width is smaller than 70 nm. A temporal change in off-state current of the transistor over time can be represented by Formula (a2). In Formula (a2), IOFFrepresents the off-state current, t represents time during which the transistor is off, α and τ are constants, β is a constant that satisfies 0<β≤1, and CSis a constant that represents load capacitance of a source or a drain. I OFF ⁡ ( t ) = C S × α × β τ β × t β - 1 × e - ( t τ ) β ( a ⁢ ⁢ 2 ) ...

Semiconductor device and method for manufacturing semiconductor device

A manufacturing method of a semiconductor device in which the threshold is adjusted to an appropriate value is provided. The semiconductor device includes a semiconductor, a source or drain electrode electrically connected to the semiconductor, a first gate electrode and a second gate electrode between which the semiconductor is sandwiched, an electron trap layer between the first gate electrode and the semiconductor, and a gate insulating layer between the second gate electrode and the semiconductor. By keeping a potential of the first gate electrode higher than a potential of the source or drain electrode for 1 second or more while heating, electrons are trapped in the electron trap layer. Consequently, threshold is increased and Icut is reduced.

Semiconductor device

Provided is a semiconductor device having a structure with which a decrease in electrical characteristics that becomes more significant with miniaturization can be suppressed. The semiconductor device includes a first oxide semiconductor film, a gate electrode overlapping with the first oxide semiconductor film, a first gate insulating film between the first oxide semiconductor film and the gate electrode, and a second gate insulating film between the first gate insulating film and the gate electrode. In the first gate insulating film, a peak appears at a diffraction angle 2 of around 28° by X-ray diffraction. A band gap of the first oxide semiconductor film is smaller than a band gap of the first gate insulating film, and the band gap of the first gate insulating film is smaller than a band gap of the second gate insulating film.

POWER STORAGE DEVICE, ELECTRODE THEREOF, AND METHOD FOR MANUFACTURING POWER STORAGE DEVICE

To provide a power storage device having excellent charge/discharge cycle characteristics and a high charge/discharge capacity. The following electrode is used as an electrode of a power storage device: an electrode including a current collector and an active material layer provided over the current collector. The active material layer includes a plurality of whisker-like active material bodies. Each of the plurality of whisker-like active material bodies includes at least a core and an outer shell provided to cover the core. The outer shell is amorphous, and a portion between the current collector and the core of the active material bodies is amorphous. Note that a metal layer may be provided instead of the current collector, the active material bodies do not necessarily have to include the core, and a mixed layer may be provided between the current collector and the active material layer.

Method for manufacturing graphene-coated object, negative electrode of secondary battery including graphene-coated object, and secondary battery including the negative electrode

To form graphene to a practically even thickness on an object having an uneven surface or a complex surface, in particular, an object having a surface with a three-dimensional structure due to complex unevenness, or an object having a curved surface. The object and an electrode are immersed in a graphene oxide solution, and voltage is applied between the object and the electrode. At this time, the object serves as an anode. Graphene oxide is attracted to the anode because of being negatively charged, and deposited on the surface of the object to have a practically even thickness. A portion where graphene oxide is deposited is unlikely coated with another graphene oxide. Thus, deposited graphene oxide is reduced to graphene, whereby graphene can be formed to have a practically even thickness on an object having surface with complex unevenness.

Semiconductor device and method for manufacturing semiconductor device having plurality of insulator

A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided.The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening.

Human antibodies that have MN binding and cell adhesion-neutralizing activity

The invention is composed of monoclonal human MN antibodies or MN antibody fragments that target the GEEDLP repeat within the proteoglycan domain. The proteoglycan domain of the MN cell surface protein contains four of these identical GEEDLP repeats. Binding to the desired epitope is verified by competition ELISA, where ELISA signal can be attenuated by co-incubation with a peptide containing this repeat (PGEEDLPGEEDLP). This inhibition of binding can also be verified using Biacore assays, where binding of desired antibodies to immobilized MN or proteoglycan peptides can be inhibited by the peptide repeat. In addition to binding to the peptide repeat, human anti-MN antibodies can inhibit the cell adhesion of CGL-1 cells to MN coated plastic plates. Human anti-MN antibodies have been used to diagnose and quantify MN expression in cancer cells and tumors using FACS and immunohistochemical methods. An example is also provided where a human anti-MN IgG1 mediates tumor cell lysis though antibody-dependent ...

Antibody inhibiting stem cell factor activity and use for treatment of asthma

The present invention provides human antibodies specific for stem cell factor that contain at least one CDR derived from a combinatorial antibody library. The invention also provides pharmaceutical compositions comprising the antibodies and methods of treating asthma. The invention further provides methods of detecting stem cell factor using the antibodies.

Semiconductor device and method for manufacturing semiconductor device

A semiconductor device includes a first conductor; a first insulator thereover; a first oxide thereover; a second oxide thereover; a second conductor and a third conductor that are separate from each other thereover; a third oxide over the first insulator, the second oxide, the second conductor, and the third conductor; a second insulator thereover; a fourth conductor thereover; and a third insulator over the first insulator, the second insulator, and the fourth conductor. The second oxide includes a region where the energy of the conduction band minimum of an energy band is low and a region where the energy of the conduction band minimum of the energy band is high. The energy of the conduction band minimum of the third oxide is higher than that of the region of the second oxide where the energy of the conduction band minimum is low. Side surfaces of the first oxide and the second oxide are covered with the third oxide.

HUMAN ANTIBODIES THAT HAVE MN BINDING AND CELL ADHESION-NEUTRALIZING ACTIVITY

The invention is composed of monoclonal human MN antibodies or MN antibody fragments that target the GEEDLP repeat within the proteoglycan domain. The proteoglycan domain of the MN cell surface protein contains four of these identical GEEDLP repeats. Binding to the desired epitope is verified by competition ELISA, where ELISA signal can be attenuated by co-incubation with a peptide containing this repeat (PGEEDLPGEEDLP). This inhibition of binding can also be verified using Biacore assays, where binding of desired antibodies to immobilized MN or proteoglycan peptides can be inhibited by the peptide repeat. In addition to binding to the peptide repeat, human anti-MN antibodies can inhibit the cell adhesion of CGL-1 cells to MN coated plastic plates. Human anti-MN antibodies have been used to diagnose and quantify MN expression in cancer cells and tumors using FACS and immunohistochemical methods. An example is also provided where a human anti-MN IgG1 mediates tumor cell lysis though antibody-dependent ...

Bicycle handlebar clamp assembly

A bicycle handlebar clamp assembly has a handlebar clamp, a fixing nut, and a fixing bolt. The fixing nut includes a threaded bore having a bolt entrance opening and a bolt exit opening. The fixing nut defines a bolt shaft receiving space disposed adjacent the bolt exit opening. The fixing bolt includes a head and a shaft extending from the head. The shaft has a non-threaded portion disposed between two threaded portions. One of threaded portions is disposed closer to the head of the fixing bolt than the other threaded portion. The threaded portions are dimensioned to threadedly engage the threaded bore of the fixing nut. The non-threaded portion has a axial length that is greater than the axial length of the threaded bore of the fixing nut.

SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT

To provide a semiconductor element in which generation of oxygen vacancies in an oxide semiconductor thin film can be suppressed. The semiconductor element has a structure in which, in a gate insulating film, the nitrogen content of regions which do not overlap with a gate electrode is higher than the nitrogen content of a region which overlaps with the gate electrode. A nitride film has an excellent property of preventing impurity diffusion; thus, with the structure, release of oxygen in the oxide semiconductor film, in particular, in the channel formation region, to the outside of the semiconductor element can be effectively suppressed. 1. A semiconductor element comprising:an oxide semiconductor film over an insulating surface;a gate insulating film over the oxide semiconductor film; anda gate electrode over the oxide semiconductor film with the gate insulating film interposed therebetween,wherein the gate insulating film comprises a first region which overlaps with the gate electrode, and a second region which does not overlap with the gate electrode, andwherein a nitrogen content of the second region is higher than a nitrogen content of the first region.2. The semiconductor element according to claim 1 ,wherein the second region comprises an upper portion and a lower portion, andwherein a nitrogen content of the upper portion is higher than a nitrogen content of the lower portion.3. The semiconductor element according to claim 1 , further comprising:an insulating film over the gate electrode; anda first conductive film and a second conductive film over the insulating film,wherein the insulating film has contact holes, andwherein the first conductive film and the second conductive film are in contact with the second region through the contact holes.4. A semiconductor element comprising:an oxide semiconductor film over an insulating surface;a gate insulating film over the oxide semiconductor film; anda gate electrode over the oxide semiconductor film with the ...

Antibody Fragments Against the Insulin Receptor and Uses Thereof to Treat Hypoglycemia

The present disclosure relates, in general, to methods of treating or preventing hypoglycemia using a negative modulator antibody fragment that binds to the insulin receptor and modulates the action of insulin at the insulin receptor. 1. An antibody or fragment thereof comprising three heavy chain CDRs having the amino acid sequence set out in SEQ ID NOs: 5-7 , 8-10 and 50-112 and three light chain CDRs have the amino acid sequences set out in SEQ ID NOs: 14-16 or SEQ ID NOs: 20-28 wherein the antibody or fragment thereof binds to i) insulin receptor or (ii) a complex comprising insulin and insulin receptor , or both (i) and (ii).2. An antibody or fragment thereof of wherein the heavy chain variable region amino acid sequence is set out in SEQ ID NOs: 1 claim 1 , 2 or 29-49 claim 1 , and the light chain variable region amino acid sequence is set out in SEQ ID NOs: 4 or 17-19.3. An antibody or fragment thereof comprising three heavy chain CDRs having the amino acid sequence set out in SEQ ID NOs: 8-10 and three light chain CDRs have the amino acid sequences set out in SEQ ID NOs: 14-16 claim 1 , wherein the antibody or fragment thereof binds to i) insulin receptor or (ii) a complex comprising insulin and insulin receptor claim 1 , or both (i) and (ii).4. The antibody or fragment thereof of wherein the heavy chain variable region amino acid sequence is set out in SEQ ID NO: 2 and the light chain variable region amino acid sequence is set out in SEQ ID NO: 4.5. An antibody fragment comprising three heavy chain CDRs having the amino acid sequences set out in SEQ ID NOs: 5-7 or 8-10 and three light chain CDRs having the amino acid sequences set out in SEQ ID NOs: 11-13 or 14-16 claim 3 , wherein the antibody fragment binds to i) insulin receptor or (ii) a complex comprising insulin and insulin receptor claim 3 , or both (i) and (ii).6. The antibody fragment of wherein the heavy chain variable region amino acid sequence is set out in SEQ ID NO: 1 or 2 and the light chain ...

Bicycle component fixing structure

A bicycle component fixing structure has a fixing nut that is configured to be coupled to a handlebar clamp and a fixing bolt. The fixing nut includes a threaded bore with an entrance opening and an exit opening. The threaded bore has a first axial length between the entrance and exit openings. The fixing nut defines a bolt shaft receiving space that is disposed adjacent the bolt exit opening. The fixing bolt includes a head and a shaft. The shaft has a non-threaded portion disposed between first and second threaded portions. The first threaded portion is disposed closer to the head of the fixing bolt than the second threaded portion. The first and second threaded portions threadedly engage the threaded bore of the fixing nut. The non-threaded portion has a second axial length that is greater than the first axial length of the threaded bore of the fixing nut.

Power storage device

A power storage device in which silicon is used as a negative electrode active material layer and which can have an improved performance such as higher discharge capacity, and a method for manufacturing the power storage device are provided. A power storage device includes a current collector and a silicon layer having a function as an active material layer over the current collector. The silicon layer includes a thin film portion in contact with the current collector, a plurality of bases, and a plurality of whisker-like protrusions extending from the plurality of bases. A protrusion extending from one of the plurality of bases is partly combined with a protrusion extending from another one of the plurality of bases.

Single-layer and multilayer graphene, method of manufacturing the same, object including the same, and electric device including the same

Graphene is formed with a practically uniform thickness on an uneven object. The object is immersed in a graphene oxide solution, and then taken out of the solution and dried; alternatively, the object and an electrode are immersed therein and voltage is applied between the electrode and the object used as an anode. Graphene oxide is negatively charged, and thus is drawn to and deposited on a surface of the object, with a practically uniform thickness. After that, the object is heated in vacuum or a reducing atmosphere, so that the graphene oxide is reduced to be graphene. In this manner, a graphene layer with a practically uniform thickness can be formed even on a surface of the uneven object.

Semiconductor device

A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a conductor, a first insulator in contact with a side surface of the conductor, a second insulator in contact with a top surface of the conductor and a top surface of the first insulator, and an oxide over the second insulator. The oxide includes a region that overlaps with the conductor with the second insulator interposed therebetween. The maximum height of a roughness curve (Rz) of the top surface of the conductor is 6.0 nm or smaller. The region includes crystals, and c-axes of the crystals are aligned in the normal direction of the top surface of the conductor.

POWER STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME

A negative electrode and a power storage device are provided, which have one of an alloy-based particle and an alloy-based whisker and a carbon film including 1 to 50 graphene layers. A surface of the alloy-based particle or the alloy-based whisker is covered with the carbon film. In addition, a method of manufacturing a negative electrode and a method of manufacturing a power storage device are provided, which have the step of mixing an alloy-based particle or an alloy-based whisker with graphene oxide, and the step of heating the mixture in a vacuum or in a reducing atmosphere.

Semiconductor device

A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. The semiconductor device includes an oxide semiconductor film over an insulating surface, an antioxidant film over the insulating surface and the oxide semiconductor film, a pair of electrodes in contact with the antioxidant film, a gate insulating film over the pair of electrodes, and a gate electrode which is over the gate insulating film and overlaps with the oxide semiconductor film. In the antioxidant film, a width of a region overlapping with the pair of electrodes is longer than a width of a region not overlapping with the pair of electrodes.

Semiconductor device and method for manufacturing semiconductor device

A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.

Power shovel

Antibodies that bind interleukin-2 and uses thereof

The present disclosure relates, in general, to human antibodies against human interleukin 2 (IL-2) and methods of use of such antibodies for modulating IL-2 activity and use in the treatment of conditions such as cancer, autoimmune disease, or infection.

Nucleic acids encoding, and methods of producing, antibodies specific for transforming growth factor (TGF)-β

The present disclosure relates, in general, to materials and methods for antibodies specific for transforming growth factor beta (TGFβ), including TGFβ1, TGFβ2 and TGFβ3, and uses of these antibodies in the treatment of subjects having cancer, an eye disease, condition or disorder, fibrosis, including ophthalmic fibrosis or fibrosis of the eye, and other conditions or disorders related to TGFβ expression.

Semiconductor device and method for manufacturing semiconductor device including an electron trap layer

A manufacturing method of a semiconductor device in which the threshold voltage is adjusted is provided. The semiconductor device includes a first semiconductor, an electrode electrically connected to the first semiconductor, a gate electrode, and an electron trap layer between the gate electrode and the first semiconductor. By performing heat treatment at higher than or equal to 125° C. and lower than or equal to 450° C. and, at the same time, keeping a potential of the gate electrode higher than a potential of the electrode for 1 second or more, the threshold voltage is increased.

Bicycle handlebar clamp and bicycle handlebar clampassembly

A bicycle handlebar clamp is configured to be attached on a handlebar. The bicycle handlebar clamp includes an outer surface, a handlebar engagement surface and an attachment bore. The handlebar engagement surface is configured to be engaged with the handlebar. The fixing nut receiving aperture is configured to receive a fixing nut. The fixing nut receiving aperture extends through the handlebar clamp from the outer surface to the handlebar engagement surface. The attachment bore is configured to receive an attachment pin. The attachment bore and the fixing nut receiving aperture intersect each other. A bicycle handlebar clamp assembly is provided with the bicycle handlebar clamp.

Semiconductor device and method for manufacturing semiconductor device

A manufacturing method of a semiconductor device in which the threshold is corrected is provided. In a semiconductor device including a plurality of transistors each includes a semiconductor, a source or drain electrode electrically connected to the semiconductor, a gate electrode, and a charge trap layer between the gate electrode and the semiconductor, electrons are trapped in the charge trap layer by performing heat treatment and, simultaneously, keeping a potential of the gate electrode higher than that of the source or drain electrode for 1 second or more. By this process, the threshold increases and Icut decreases. A circuit for supplying a signal to the gate electrode and a circuit for supplying a signal to the source or drain electrode are electrically separated from each other. The process is performed in the state where the potential of the former circuit is set higher than the potential of the latter circuit.

Method for manufacturing semiconductor device

A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. Oxygen is introduced into a surface of an insulating film, and then, an oxide semiconductor, a layer which is capable of blocking oxygen, a gate insulating film, and other films which composes a transistor are formed. For at least one of the first gate insulating film and the insulating film, three signals in Electron Spin Resonance Measurement are each observed in a certain range of g-factor. Reducing the sum of the spin densities of the signals will improve reliability of the semiconductor device.

METHOD OF PRODUCING HUMAN IGG ANTIBODIES WITH ENHANCED EFFECTOR FUNCTIONS

A method for generating human IgGantibodies with enhanced Fc effector function is disclosed. In practicing the method, an IgGFc look-through mutagenesis (LTM) coding library directed at four receptor-contact regions of the Fc C2 portion in human IgG. Fc is expressed in a system in which the mutated Fc fragments are displayed on the surfaces of the expression cells. The fragments are then screened for altered binding affinity to a selected Fc receptor or other Fc-binding protein. The selected mutations may be used, in turn, to guide the selection of multiple substitutions in the construction of a walk-through mutation (WTM) library, for generating additional Fc fragment mutations with desired binding properties. The antibodies so produced have a variety of therapeutic and diagnostic applications. 1. A method of generating human Igd antibodies with enhanced effector function , comprising(a) constructing an IgGi Fc look-through mutagenesis (LTM) coding library selected from one of:(i) a regional LTM library encoding, for at least one of the two Igd Fc regions identified by SEQ ID NOS: 1 and 2, representing the CH2 and CH3 regions of the antibody's Fc fragment, respectively, and for each of a plurality of amino acids, individual amino acid substitutions at multiple amino acid positions within said at least one of the two IgGi Fc regions, and(ii) a sub-region LTM library encoding, for each of the four regions identified by SEQ ID NOS: 3-6 contained within the IgGi Fc CH2 region identified by SEQ ID NO:1, and for each of a plurality of selected amino acids, individual substitutions at multiple amino acid positions within each region, and(b) expressing the IgGi Fc fragments encoded by the LTM library in a selectable expression system, and(c) selecting those IgGi Fc fragments expressed in (b) that are characterized by an enhanced effector function related to at least one of:(i) a shift in binding affinity constant (Ko), with respect to a selected IgGt Fc binding protein, ...

Bicycle operating device

A bicycle operating device comprises a mounting clamp and a restricting structure. The mounting clamp is configured to be mounted to a bicycle tube member. The mounting clamp comprises a first radius portion, a second radius portion, and a clamp opening. The first radius portion defines a first inner radius. The second radius portion defines a second inner radius different from the first inner radius. The bicycle tube member is to extend through the clamp opening. The clamp opening is defined by the first radius portion and the second radius portion. The restricting structure is provided on the second radius portion and is configured to restrict relative movement between the second radius portion and an adapter member at least in a circumferential direction of the second radius portion.

Parathyroid Hormone Receptor 1 (PTH1R) Antibodies and Uses Thereof

The present disclosure relates, in general, human antibodies against human parathyroid hormone receptor 1 (PTH1R) and methods of use of such antibodies in the treatment of cancer, Humoral Hypercalcemia of Malignancy (HHM), or Primary Hyperparathyroidism (PHPT) and Secondary Hyperparathyroidism (SHPT) and cachexia. 1. An antibody that binds parathyroid hormone receptor 1 (PTH1R) with an affinity Kof 2×10M or less.2. The antibody of wherein the antibody binds the N-terminal portion of PTH1R.3. The antibody of wherein the antibody does not bind parathyroid hormone receptor 2 (PTH2R).4. The antibody of claim 1 , wherein the antibody binds PTH1R on the surface of a cell.5. The antibody of claim 1 , wherein the antibody binds allosterically to PTH1R.6. The antibody of any claim 1 , wherein the antibody is a negative modulator antibody claim 1 , optionally wherein the antibody is capable of weakening the binding affinity between PTH or PTHrP and with PTH1R by at least about 2-fold claim 1 , optionally up to 1000-fold.7. The antibody of claim 1 , wherein the antibody inhibits calcium flux in a cell in response to stimulation of the receptor with parathyroid hormone (PTH) or parathyroid hormone related protein (PTHrP).8. The antibody of claim 1 , wherein the antibody inhibits PTH- or PTHrP-mediated cyclic adenosine mono-phosphate (cAMP) accumulation.9. The antibody of that is a monoclonal antibody.10. An antibody that binds parathyroid hormone receptor 1 (PTH1R) comprising (a) a heavy chain CDR1 amino acid sequence set forth in SEQ ID NOs: 27 claim 1 , 30 claim 1 , 33 claim 1 , 36 claim 1 , 39 claim 1 , 42 claim 1 , 45 claim 1 , 48 claim 1 , 51 claim 1 , 54 claim 1 , 57 claim 1 , 60 claim 1 , 63 claim 1 , 66 claim 1 , 69 claim 1 , 72 claim 1 , 75 claim 1 , 78 claim 1 , 81 claim 1 , 84 claim 1 , 87 claim 1 , 90 claim 1 , 93 claim 1 , 96 claim 1 , 99 claim 1 ,102 claim 1 , or a variant thereof in which one or two amino acids have been changed;(b) a heavy chain CDR2 amino acid ...

Semiconductor device and method for measuring current of semiconductor device

A semiconductor device in which a transistor has the characteristic of low off-state current is provided. The transistor comprises an oxide semiconductor layer having a channel region whose channel width is smaller than 70 nm. A temporal change in off-state current of the transistor over time can be represented by Formula (a2). In Formula (a2), IOFFrepresents the off-state current, t represents time during which the transistor is off, α and τ are constants, β is a constant that satisfies 0<β≤1, and CSis a constant that represents load capacitance of a source or a drain. I OFF ⁡ ( t ) = C S × α × β τ β × t β - 1 × e - ( t τ ) β ( a2 ) ...

Methods and materials for enhancing functional protein expression in bacteria

Novel materials and methods useful for expressing heterologous proteins in prokaryotic cells are provided, including prokaryotic cells expressing FkpA and/or Skp.

Semiconductor device

The semiconductor device includes a first conductor and a second conductor; a first insulator to a third insulator; and a first oxide to a third oxide. The first conductor is disposed to be exposed from a top surface of the first insulator. The first oxide is disposed over the first insulator and the first conductor. A first opening reaching the first conductor is provided in the first oxide. The second oxide is disposed over the first oxide. The second oxide comprises a first region, a second region, and a third region positioned between the first region and the second region. The third oxide is disposed over the second oxide. The second insulator is disposed over the third oxide. The second conductor is disposed over the second insulator. The third insulator is disposed to cover the first region and the second region and to be in contact with the top surface of the first insulator.

Negative electrode for non-aqueous secondary battery, non-aqueous secondary battery, and manufacturing methods thereof

A non-aqueous secondary battery which has high charge-discharge capacity, can be charged and discharged at high speed, and has little deterioration in battery characteristics due to charge and discharge is provided. A negative electrode includes a current collector and an active material layer. The current collector includes a plurality of protrusion portions extending in a substantially perpendicular direction and a base portion connected to the plurality of protrusion portions. The protrusion portions and the base portion are formed using the same material containing titanium. Top surfaces and side surfaces of the protrusion portions and a top surface of the base portion are covered with the active material layer. The active material layer includes a plurality of whiskers. The active material layer may be covered with graphene.

Antibodies Specific for TGF-Beta

The present disclosure relates, in general, to materials and methods for antibodies specific for transforming growth factor beta (TGFβ), including TGFβ1, TGFβ2 and TGFβ3, and uses of these antibodies in the treatment of subjects having cancer, an eye disease, condition or disorder, fibrosis, including ophthalmic fibrosis or fibrosis of the eye, and other conditions or disorders related to TGFβ expression. 1. An antibody that binds transforming growth factor beta (TGFβ)1 , TGFβ2 and TGFβ3 comprising:(a) a heavy chain CDR1 amino acid sequence set forth in Table 1 or SEQ ID NOs: 13, 19 and 25, or a variant thereof in which one or two amino acids have been changed;(b) a heavy chain CDR2 amino acid sequence set forth in Table 1 or SEQ ID NOs: 14, 20 and 26 that is from the same heavy chain variable region as (a), or a variant thereof in which one or two amino acids have been changed; and(c) a heavy chain CDR3 amino acid sequence set forth in Table 1 or SEQ ID NOs: 15, 21 and 27 that is from the same heavy chain variable region as (a), or a variant thereof in which one or two amino acids have been changed.2. An antibody that binds transforming growth factor beta (TGFβ)1 , TGFβ2 and TGFβ3 comprising:(a) a heavy chain CDR1 amino acid sequence set forth in Table 1 or SEQ ID NOs: 13, 19 and 25, or a variant thereof having at least 70% identity thereto;(b) a heavy chain CDR2 amino acid sequence set forth in Table 1 or SEQ ID NOs: 14, 20 and 26 that is from the same heavy chain variable region as (a), or a variant thereof having at least 70% identity thereto; and(c) a heavy chain CDR3 amino acid sequence set forth in Table 1 or SEQ ID NOs: 15, 21 and 27 that is from the same heavy chain variable region as (a), or a variant thereof having at least 70% identity thereto.3. An antibody that binds transforming growth factor beta (TGFβ)1 , TGFβ2 and TGFβ3 comprising:(a) a heavy chain CDR1 amino acid sequence set forth in Table 1 or SEQ ID NOs: 13, 19 and 25, or a variant thereof ...

MT-SP1 polypeptides

This invention provides a novel membrane-type serine protease (designated MT-SP1) elevated expression of which is associated with cancer. In one embodiment, this invention provides a method obtaining a prognosis or of detecting or staging a cancer in an organism. The method involves providing a biological sample from the organism and detecting the level of a membrane type serine protease 1 (MT-SP1) in the sample, where an elevated level of the membrane-type serine protease, as compared to the level of the protease in a biological sample from a normal healthy organism indicates the presence or stage of the cancer.

Antibody inhibiting stem cell factor activity and use for treatment of asthma

The present invention provides human antibodies specific for stem cell factor that contain at least one CDR derived from a combinatorial antibody library. The invention also provides pharmaceutical compositions comprising the antibodies and methods of treating asthma. The invention further provides methods of detecting stem cell factor using the antibodies.

Antibody to stem cell factor

The present invention provides human antibodies specific for stem cell factor that contain at least one CDR derived from a combinatorial antibody library. The invention also provides pharmaceutical compositions comprising the antibodies and methods of treating asthma. The invention further provides methods of detecting stem cell factor using the antibodies.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Stable electrical characteristics and high reliability are provided for a miniaturized semiconductor device including an oxide semiconductor, and the semiconductor device is manufactured. The semiconductor device includes a base insulating layer; an oxide stack which is over the base insulating layer and includes an oxide semiconductor layer; a source electrode layer and a drain electrode layer over the oxide stack; a gate insulating layer over the oxide stack, the source electrode layer, and the drain electrode layer; a gate electrode layer over the gate insulating layer; and an interlayer insulating layer over the gate electrode layer. In the semiconductor device, the defect density in the oxide semiconductor layer is reduced. 1. A method for manufacturing a semiconductor device , comprising the steps of:forming an oxide semiconductor layer comprising indium over a substrate;forming a first insulating layer comprising oxygen over the oxide semiconductor layer; andforming a gate electrode over the first insulating layer,wherein the first insulating layer is formed under a pressure higher than or equal to 100 Pa and lower than or equal to 300 Pa.2. The method according to claim 1 , wherein the oxide semiconductor layer has a spin density of 1.5×10spins/cmor less.3. The method according to claim 1 , wherein the first insulating layer has a spin density of 2×10spins/cmor more.4. The method according to claim 1 , wherein the first insulating layer is a silicon oxynitride layer.5. The method according to claim 1 , wherein the oxide semiconductor layer comprises gallium.6. The method according to claim 1 , wherein the oxide semiconductor layer comprises zinc.7. The method according to claim 1 , wherein the first insulating layer is formed by a plasma CVD method.8. The method according to claim 1 , further comprising the step of forming a source electrode and a drain electrode over the oxide semiconductor layer claim 1 , wherein the first insulating layer is formed over ...

Semiconductor device having plurality of insulators

A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided. The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening.

BICYCLE SHIFT CONTROL DEVICE

A bicycle shift control device is provided with a shifter housing, a gear shifting mechanism, a shift operating member, and a shift switching arrangement. The gear shifting mechanism is disposed in the shifter housing with the gear shifting mechanism having a plurality of operating positions. The shift operating member is movable with respect to the shifter housing to operate the gear shifting mechanism. The shift switching arrangement includes a restricting member movably mounted with respect to the shifter housing between a non-shift restricting position and a shift restricting position. The gear shifting mechanism moves in a first set of the operating positions when the restricting member is in the non-shift restricting position, and moves in a second set of the operating positions that are different from the first set of the operating positions when the restricting member is in the shift restricting position.

Semiconductor device and method for manufacturing semiconductor device for adjusting threshold thereof

A manufacturing method of a semiconductor device in which the threshold is adjusted is provided. In a semiconductor device including a plurality of transistors arranged in a matrix each including a semiconductor, a source or drain electrode electrically connected to the semiconductor, a gate electrode, and a charge trap layer between the gate electrode and the semiconductor, electrons are trapped in the charge trap layer by performing heat treatment and, simultaneously, keeping a potential of the gate electrode higher than that of the source or drain electrode for 1 second or more. By this process, the threshold increases and Icut decreases. A circuit that supplies a signal to the gate electrode (e.g., word line driver) is provided with a selection circuit formed of an OR gate, an XOR gate, or the like, whereby potentials of word lines can be simultaneously set higher than potentials of bit lines.

Proteins for the treatment of epithelial barrier function disorders

The disclosure relates to therapeutic proteins and pharmaceutical compositions comprising said proteins, which have utility in treating various human diseases. In particular aspects, the disclosed therapeutic proteins are useful for treating human gastrointestinal inflammatory diseases and gastrointestinal conditions associated with decreased epithelial cell barrier function or integrity. Further, the disclosed therapeutic proteins are useful for treating human inflammatory bowel disease, including inter alia, Crohn's disease and ulcerative colitis.

Antibodies Specific for TGF-Beta

The present disclosure relates, in general, to materials and methods for antibodies specific for transforming growth factor beta (TGFβ), including TGFβ1, TGFβ2 and TGFβ3, and uses of these antibodies in the treatment of subjects having cancer, an eye disease, condition or disorder, fibrosis, including ophthalmic fibrosis or fibrosis of the eye, and other conditions or disorders related to TGFβ expression. 1. An antibody that binds transforming growth factor beta (TGFβ)1 , TGFβ2 and TGFβ3 comprising:(a) a heavy chain CDR1 amino acid sequence set forth in Table 1 or SEQ ID NOs: 13, 19 and 25, or a variant thereof in which one or two amino acids have been changed;(b) a heavy chain CDR2 amino acid sequence set forth in Table 1 or SEQ ID NOs: 14, 20 and 26 that is from the same heavy chain variable region as (a), or a variant thereof in which one or two amino acids have been changed; and(c) a heavy chain CDR3 amino acid sequence set forth in Table 1 or SEQ ID NOs: 15, 21 and 27 that is from the same heavy chain variable region as (a), or a variant thereof in which one or two amino acids have been changed.2. An antibody that binds transforming growth factor beta (TGFβ)1 , TGFβ2 and TGFβ3 comprising:(a) a heavy chain CDR1 amino acid sequence set forth in Table 1 or SEQ ID NOs: 13, 19 and 25, or a variant thereof having at least 70% identity thereto;(b) a heavy chain CDR2 amino acid sequence set forth in Table 1 or SEQ ID NOs: 14, 20 and 26 that is from the same heavy chain variable region as (a), or a variant thereof having at least 70% identity thereto; and(c) a heavy chain CDR3 amino acid sequence set forth in Table 1 or SEQ ID NOs: 15, 21 and 27 that is from the same heavy chain variable region as (a), or a variant thereof having at least 70% identity thereto.3. An antibody that binds transforming growth factor beta (TGFβ)1 , TGFβ2 and TGFβ3 comprising:(a) a heavy chain CDR1 amino acid sequence set forth in Table 1 or SEQ ID NOs: 13, 19 and 25, or a variant thereof ...

Antibody Fragments Against the Insulin Receptor and Uses Thereof to Treat Hypoglycemia

The present disclosure relates, in general, to methods of treating or preventing hypoglycemia using a negative modulator antibody fragment that binds to the insulin receptor and modulates the action of insulin at the insulin receptor. 1. An antibody or fragment thereof comprising three heavy chain CDRs having the amino acid sequence set out in SEQ ID NOs: 5-7 , 8-10 and 50-112 and three light chain CDRs have the amino acid sequences set out in SEQ ID NOs: 14-16 or SEQ ID NOs: 20-28 wherein the antibody or fragment thereof binds to i) insulin receptor or (ii) a complex comprising insulin and insulin receptor , or both (i) and (ii).2. An antibody or fragment thereof of wherein the heavy chain variable region amino acid sequence is set out in SEQ ID NOs: 1 claim 1 , 2 or 29-49 claim 1 , and the light chain variable region amino acid sequence is set out in SEQ ID NOs: 4 or 17-19.3. An antibody or fragment thereof comprising three heavy chain CDRs having the amino acid sequence set out in SEQ ID NOs: 8-10 and three light chain CDRs have the amino acid sequences set out in SEQ ID NOs: 14-16 claim 1 , wherein the antibody or fragment thereof binds to i) insulin receptor or (ii) a complex comprising insulin and insulin receptor claim 1 , or both (i) and (ii).4. The antibody or fragment thereof of wherein the heavy chain variable region amino acid sequence is set out in SEQ ID NO: 2 and the light chain variable region amino acid sequence is set out in SEQ ID NO: 4.5. An antibody fragment comprising three heavy chain CDRs having the amino acid sequences set out in SEQ ID NOs: 5-7 or 8-10 and three light chain CDRs having the amino acid sequences set out in SEQ ID NOs: 11-13 or 14-16 claim 3 , wherein the antibody fragment binds to i) insulin receptor or (ii) a complex comprising insulin and insulin receptor claim 3 , or both (i) and (ii).6. The antibody fragment of wherein the heavy chain variable region amino acid sequence is set out in SEQ ID NO: 1 or 2 and the light chain ...

Power storage device and method for manufacturing the same

A power storage device including a negative electrode having high cycle performance in which little deterioration due to charge and discharge occurs is manufactured. A power storage device including a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode is manufactured, in which the negative electrode includes a negative electrode current collector and a negative electrode active material layer, and the negative electrode active material layer includes an uneven silicon layer formed over the negative electrode current collector, a silicon oxide layer or a mixed layer which includes silicon oxide and a silicate compound and is in contact with the silicon layer, and graphene in contact with the silicon oxide layer or the mixed layer including the silicon oxide and the silicate compound.

SEMICONDUCTOR DEVICE

A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. The semiconductor device includes an oxide semiconductor film over an insulating surface, an antioxidant film over the insulating surface and the oxide semiconductor film, a pair of electrodes in contact with the antioxidant film, a gate insulating film over the pair of electrodes, and a gate electrode which is over the gate insulating film and overlaps with the oxide semiconductor film. In the antioxidant film, a width of a region overlapping with the pair of electrodes is longer than a width of a region not overlapping with the pair of electrodes.

Semiconductor device and electronic device including the semiconductor device

A semiconductor device includes a first oxide semiconductor film, a second oxide semiconductor film over the first oxide semiconductor film, a source electrode in contact with the second oxide semiconductor film, a drain electrode in contact with the second oxide semiconductor film, a metal oxide film over the second oxide semiconductor film, the source electrode, and the drain electrode, a gate insulating film over the metal oxide film, and a gate electrode over the gate insulating film. The metal oxide film contains M (M represents Ti, Ga, Y, Zr, La, Ce, Nd, or Hf) and Zn. The metal oxide film includes a portion where x/(x+y) is greater than 0.67 and less than or equal to 0.99 when a target has an atomic ratio of M:Zn=x:y.

Antibodies Specific for TGF-Beta

The present disclosure relates, in general, to materials and methods for antibodies specific for transforming growth factor beta (TGFβ), including TGFβ1, TGFβ2 and TGFβ3, and uses of these antibodies in the treatment of subjects having cancer, an eye disease, condition or disorder, fibrosis, including ophthalmic fibrosis or fibrosis of the eye, and other conditions or disorders related to TGFβ expression. 1. An antibody that binds transforming growth factor beta (TGFβ)1 , TGFβ2 and TGFβ3 comprising:(a) a heavy chain CDR1 amino acid sequence set forth in Table 1 or SEQ ID NOs: 13, 19 and 25, or a variant thereof in which one or two amino acids have been changed;(b) a heavy chain CDR2 amino acid sequence set forth in Table 1 or SEQ ID NOs: 14, 20 and 26 that is from the same heavy chain variable region as (a), or a variant thereof in which one or two amino acids have been changed; and(c) a heavy chain CDR3 amino acid sequence set forth in Table 1 or SEQ ID NOs: 15, 21 and 27 that is from the same heavy chain variable region as (a), or a variant thereof in which one or two amino acids have been changed.2. An antibody that binds transforming growth factor beta (TGFβ)1 , TGFβ2 and TGFβ3 comprising:(a) a heavy chain CDR1 amino acid sequence set forth in Table 1 or SEQ ID NOs: 13, 19 and 25, or a variant thereof having at least 70% identity thereto;(b) a heavy chain CDR2 amino acid sequence set forth in Table 1 or SEQ ID NOs: 14, 20 and 26 that is from the same heavy chain variable region as (a), or a variant thereof having at least 70% identity thereto; and(c) a heavy chain CDR3 amino acid sequence set forth in Table 1 or SEQ ID NOs: 15, 21 and 27 that is from the same heavy chain variable region as (a), or a variant thereof having at least 70% identity thereto.3. An antibody that binds transforming growth factor beta (TGFβ)1 , TGFβ2 and TGFβ3 comprising:(a) a heavy chain CDR1 amino acid sequence set forth in Table 1 or SEQ ID NOs: 13, 19 and 25, or a variant thereof ...

LIBRARIES, ARRAYS AND THEIR USES FOR TARGETED AFFINITY ENHANCEMENT

The present disclosure relates to methods and materials for enhancing the binding affinity of an antibody by means of generating a library or an array of targeted amino acid changes (e.g., mutations) at one or more positions in an antibody variable domain. The present disclosure relates to libraries or arrays and their uses for enhancing antibody affinity. The present disclosure relates to methods and materials for mutagenesis, including for the generation of novel or improved antibody variable domains and libraries or arrays of mutant antibody variable domains or nucleic acids encoding such mutant or modified variable domains.

Semiconductor device

Provided is a semiconductor device having a structure with which a decrease in electrical characteristics that becomes more significant with miniaturization can be suppressed. The semiconductor device includes a first oxide semiconductor film, a gate electrode overlapping with the first oxide semiconductor film, a first gate insulating film between the first oxide semiconductor film and the gate electrode, and a second gate insulating film between the first gate insulating film and the gate electrode. In the first gate insulating film, a peak appears at a diffraction angle 2θ of around 28° by X-ray diffraction. A band gap of the first oxide semiconductor film is smaller than a band gap of the first gate insulating film, and the band gap of the first gate insulating film is smaller than a band gap of the second gate insulating film.

Manufacturing method of group of whiskers

A seed substrate is placed to face a formation substrate, and then a gas containing silicon is introduced and chemical vapor deposition is performed. There is no particular limitation on a kind of a material used for the formation substrate as long as the material can withstand the temperature at which the reduced pressure chemical vapor deposition is performed. A group of silicon whiskers which does not include a seed atom can be grown directly on and in contact with the formation substrate. Further, the substrate provided with the group of whiskers can be applied to a solar cell, a lithium ion secondary battery, and the like, by utilizing surface characteristics of the group of whiskers.

Bicycle operating device

A bicycle operating device comprises an operating unit, a mounting member, and a positioning structure. The operating unit includes a first portion. The mounting member includes a second portion configured to be connected with the first portion of the operating unit. The positioning structure is configured to adjustably position the first portion with respect to the second portion in a first direction and a second direction. The positioning structure comprises an abutment member and a fixing member. The abutment member is arranged opposite to the first portion with respect to the second portion. The fixing member is configured to fix the second portion with respect to the first portion by sandwiching the second portion between the first portion and the abutment member.

Single-layer and multilayer graphene, method of manufacturing the same, object including the same, and electric device including the same

Graphene is formed with a practically uniform thickness on an uneven object. The object is immersed in a graphene oxide solution, and then taken out of the solution and dried; alternatively, the object and an electrode are immersed therein and voltage is applied between the electrode and the object used as an anode. Graphene oxide is negatively charged, and thus is drawn to and deposited on a surface of the object, with a practically uniform thickness. After that, the object is heated in vacuum or a reducing atmosphere, so that the graphene oxide is reduced to be graphene. In this manner, a graphene layer with a practically uniform thickness can be formed even on a surface of the uneven object.

Universal Antibody Libraries

Universal antibody libraries are described which are synthetic and derived from expressed human antibody sequences selected accordingly to certain criteria, for example, that the sequences are derived from naturally-occurring antibodies expressed in response to a certain antigen class (e.g., small molecule, polysaccharide, peptide, or protein) and having CDR regions engineered for optimal diversity. Methods for making and screening such libraries for isolating therapeutics suitable for treating disease are also disclosed.

Method for manufacturing graphene-coated object, negative electrode of secondary battery including graphene-coated object, and secondary battery including the negative electrode

To form graphene to a practically even thickness on an object having an uneven surface or a complex surface, in particular, an object having a surface with a three-dimensional structure due to complex unevenness, or an object having a curved surface. The object and an electrode are immersed in a graphene oxide solution, and voltage is applied between the object and the electrode. At this time, the object serves as an anode. Graphene oxide is attracted to the anode because of being negatively charged, and deposited on the surface of the object to have a practically even thickness. A portion where graphene oxide is deposited is unlikely coated with another graphene oxide. Thus, deposited graphene oxide is reduced to graphene, whereby graphene can be formed to have a practically even thickness on an object having surface with complex unevenness.

Bicycle shifter

A bicycle shifter is provided with a shifter housing, a winding member and an indicator unit. The winding member is movably coupled to the shifter housing. The indicator unit includes an indicating member and an adjustment member. The indicating member is operatively and adjustably connected to the winding member. The adjustment member adjusts a position of the indicating member relative to the winding member.

Measuring method of low off-state current of transistor

A minute current measurement method is provided. In the current measurement method, a first potential is applied to a first terminal of a transistor under test, a second potential is applied to a first terminal of a first transistor, the first transistor is turned on to accumulate a predetermined charge in a node electrically connecting a second terminal of the transistor under test with a second terminal of the first transistor, a third potential of an output terminal of a read circuit electrically connected to the node is measured, the first transistor is turned off, a fourth potential of the output terminal of the read circuit electrically connected to the node is measured, the amount of the charge held by the node is estimated from the amount of change in the potential of the output terminal of the read circuit (e.g., a difference between the third potential and the fourth potential), and a value of current flowing between the first terminal of the transistor under test and the second ...

Antibodies specific for TGF- and methods of treatment thereof

The present disclosure relates, in general, to materials and methods for antibodies specific for transforming growth factor beta (TGF), including TGF1, TGF2 and TGF3, and uses of these antibodies in the treatment of subjects having cancer, an eye disease, condition or disorder, fibrosis, including ophthalmic fibrosis or fibrosis of the eye, and other conditions or disorders related to TGF expression.

Parathyroid hormone receptor 1 (PTH1R) antibodies and uses thereof

The present disclosure relates, in general, human antibodies against human parathyroid hormone receptor 1 (PTH1R) and methods of use of such antibodies in the treatment of cancer, Humoral Hypercalcemia of Malignancy (HHM), or Primary Hyperparathyroidism (PHPT) and Secondary Hyperparathyroidism (SHPT) and cachexia.

Semiconductor device

A semiconductor device that can be scaled down or highly integrated is provided. The semiconductor device includes a first layer and a second layer over the first layer. The first layer and the second layer each include a transistor. The transistor in the first layer and the transistor in the second layer each include a first oxide, a first conductor and a second conductor over the first oxide, a first insulator placed to cover the first conductor, the second conductor, and the first oxide, a second insulator over the first insulator, a second oxide placed between the first conductor and the second conductor over the first oxide, a third insulator over the second oxide, a third conductor over the third insulator, and a fourth insulator in contact with a top surface of the second insulator, a top surface of the second oxide, a top surface of the third insulator, and a top surface of the third conductor. The first insulator and the fourth insulator are less likely than the second insulator ...

Membrane type serine protease 1 (MT-SP1) and uses thereof

This invention provides a novel membrane-type serine protease (designated MT-SP1) elevated expression of which is associated with cancer. In one embodiment, this invention provides a method obtaining a prognosis or of detecting or staging a cancer in an organism. The method involves providing a biological sample from the organism and detecting the level of a membrane type serine protease 1 (MT-SP1) in the sample, where an elevated level of the membrane-type serine protease, as compared to the level of the protease in a biological sample from a normal healthy organism indicates the presence or stage of the cancer.

Method for manufacturing graphene-coated object, negative electrode of secondary battery including graphene-coated object, and secondary battery including the negative electrode

To form graphene to a practically even thickness on an object having an uneven surface or a complex surface, in particular, an object having a surface with a three-dimensional structure due to complex unevenness, or an object having a curved surface. The object and an electrode are immersed in a graphene oxide solution, and voltage is applied between the object and the electrode. At this time, the object serves as an anode. Graphene oxide is attracted to the anode because of being negatively charged, and deposited on the surface of the object to have a practically even thickness. A portion where graphene oxide is deposited is unlikely coated with another graphene oxide. Thus, deposited graphene oxide is reduced to graphene, whereby graphene can be formed to have a practically even thickness on an object having surface with complex unevenness.

Method for forming silicon film and method for manufacturing power storage device

A formation method of a silicon film which contributes to improvements in cycle characteristics and an increase in charge/discharge capacity and can be used as an active material layer is provided. In addition, a manufacturing method of a power storage device including the silicon film is provided. The formation method is as follows. A crystalline silicon film is formed over a conductive layer by an LPCVD method. The supply of a source gas is stopped and heat treatment is performed on the silicon film while the source gas is exhausted. The silicon film is grown to have whisker-like portions by an LPCVD method while the source gas is supplied into the reaction space. A power storage device is manufactured using, as an active material layer included in a negative electrode, the silicon film grown to have whisker-like portions.

High affinity anti-TNF-alpha antibodies and method

An isolated human anti-TNF-α antibody, or antigen-binding portion thereof, containing at least one high-affinity V L or V H antibody chain that is effective, when substituted for the corresponding V L or V H chain of the anti-TNF-α scFv antibody having sequence SEQ ID NO: 1, to bind to human TNF-α with a K off rate constant that is at least 1.5 fold lower than that of the antibody having SEQ ID NO: 1, when determined under identical conditions.

Methods and materials for targeted mutagenesis

The present disclosure relates to methods and materials for mutagenesis, including for the generation of novel or improved proteins and libraries or arrays of mutant proteins or nucleic acids encoding such mutant proteins.

Semiconductor device and method for manufacturing semiconductor device

A semiconductor device with a high on-state current is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a first conductor and a second conductor over the second oxide, a third oxide over the second oxide, a second insulator over the third oxide, a third conductor that is located over the second insulator and overlaps with the third oxide, a third insulator that is located over the first insulator and in contact with a side surface of the first oxide, a side surface of the second oxide, a side surface of the first conductor, a top surface of the first conductor, a side surface of the second conductor, and a top surface of the second conductor, and a fourth insulator over the third conductor, the second insulator, the third oxide, and the third insulator. The fourth insulator is in contact with a top surface of each of the third conductor, the second insulator, and the third oxide.

Fully human anti-VEGF antibodies and methods of using

Disclosed herein are fully human antibodies and antigen-binding fragments thereof that specifically bind human VEGF and inhibit VEGF binding to VEGF-R1 and VEGF-R2, and therefore inhibit VEGF signaling. The antibodies and antigen-binding fragments disclosed herein may be used, for example, to treat angiogenesis and conditions associated with angiogenesis both in vivo and in vitro.

MT-SP1 POLYNUCLEOTIDES AND POLYPEPTIDES

This invention provides a novel membrane-type serine protease (designated MT-SP1) elevated expression of which is associated with cancer. In one embodiment, this invention provides a method obtaining a prognosis or of detecting or staging a cancer in an organism. The method involves providing a biological sample from the organism and detecting the level of a membrane type serine protease 1 (MT-SP1) in the sample, where an elevated level of the membrane-type serine protease, as compared to the level of the protease in a biological sample from a normal healthy organism indicates the presence or stage of the cancer.

Semiconductor device and method for manufacturing semiconductor device

A semiconductor device that can have favorable electrical characteristics and can be highly integrated is provided.The semiconductor device includes a first insulator; a second insulator over the first insulator; an oxide over the second insulator; a first conductor and a second conductor over the oxide; a third insulator over the oxide; a third conductor positioned over the third insulator and overlapping with the oxide; a fourth insulator in contact with the second insulator, a side surface of the oxide, a side surface of the first conductor, a top surface of the first conductor, a side surface of the second conductor, a top surface of the second conductor, and a side surface of the third insulator; and a fifth insulator in contact with a top surface of the third insulator and a top surface of the third conductor, and a top surface of the fourth insulator is in contact with the fifth insulator.

Electrode for power storage device and power storage device

An electrode for a power storage device with good cycle characteristics and high charge/discharge capacity is provided. In addition, a power storage device including the electrode is provided. The electrode for the power storage device includes a conductive layer and an active material layer provided over the conductive layer, the active material layer includes graphene and an active material including a plurality of whiskers, and the graphene is provided to be attached to a surface portion of the active material including a plurality of whiskers and to have holes in part of the active material layer. Further, in the electrode for the power storage device, the graphene is provided to be attached to a surface portion of the active material including a plurality of whiskers and to cover the active material including a plurality of whiskers. Further, the power storage device including the electrode is manufactured.

Semiconductor device

The semiconductor device includes a first conductor and a second conductor; a first insulator to a third insulator; and a first oxide to a third oxide. The first conductor is disposed to be exposed from a top surface of the first insulator. The first oxide is disposed over the first insulator and the first conductor. A first opening reaching the first conductor is provided in the first oxide. The second oxide is disposed over the first oxide. The second oxide comprises a first region, a second region, and a third region positioned between the first region and the second region. The third oxide is disposed over the second oxide. The second insulator is disposed over the third oxide. The second conductor is disposed over the second insulator. The third insulator is disposed to cover the first region and the second region and to be in contact with the top surface of the first insulator.

Semiconductor device and method for manufacturing semiconductor device

A semiconductor device includes a first conductor; a first insulator thereover; a first oxide thereover; a second oxide thereover; a second conductor and a third conductor that are separate from each other thereover; a third oxide over the first insulator, the second oxide, the second conductor, and the third conductor; a second insulator thereover; a fourth conductor thereover; and a third insulator over the first insulator, the second insulator, and the fourth conductor. The second oxide includes a region where the energy of the conduction band minimum of an energy band is low and a region where the energy of the conduction band minimum of the energy band is high. The energy of the conduction band minimum of the third oxide is higher than that of the region of the second oxide where the energy of the conduction band minimum is low. Side surfaces of the first oxide and the second oxide are covered with the third oxide.

Semiconductor device and method for manufacturing semiconductor device

A manufacturing method of a semiconductor device in which the threshold voltage is adjusted is provided. The semiconductor device includes a first semiconductor, an electrode electrically connected to the first semiconductor, a gate electrode, and an electron trap layer between the gate electrode and the first semiconductor. By performing heat treatment at higher than or equal to 125° C. and lower than or equal to 450° C. and, at the same time, keeping a potential of the gate electrode higher than a potential of the electrode for 1 second or more, the threshold voltage is increased.

METHODS AND MATERIALS FOR ENHANCING FUNCTIONAL PROTEIN EXPRESSION IN BACTERIA

Novel materials and methods useful for expressing heterologous proteins in prokaryotic cells are provided, including prokaryotic cells expressing FkpA and/or Skp. 1. A prokaryotic host cell that expresses a heterologous protein for recombinant production comprising:(a) a polynucleotide encoding (i) FkpA that is not linked to a functional signal sequence, or a functional fragment thereof, or (ii) Skp that is not linked to a functional signal sequence, or a functional fragment thereof, and(b) a polynucleotide encoding the heterologous protein linked to a functional signal sequence.2. The host cell of wherein the host cell comprises a polynucleotide encoding FkpA that is not linked to a functional signal sequence claim 1 , or a functional fragment thereof claim 1 , optionally wherein the host cell further comprises a polynucleotide encoding Skp that is not linked to a functional signal sequence claim 1 , or a functional fragment thereof.3. The host cell of wherein the host cell comprises a polynucleotide encoding Skp that is not linked to a functional signal sequence claim 1 , or a functional fragment thereof.4. (canceled)5Escherichia coli, Salmonella typhimurium, Bacillus subtilis, Bacillus licheniformis, Bacillus megaterium, Bacillus brevi, Pseudomonas aeruginosa, Pseudomonas fluorescens, Ralstonia eutropha, Staphylococcus carnosusSerratia marcescans.. The host cell of wherein the prokaryotic host cell is selected from the group consisting of and6. The host cell of wherein the heterologous protein is associated with mis-folding or a slow folding rate in the absence of FkpA and Skp.7. (canceled)8. The host cell of wherein the heterologous protein is fused to a filamentous phage coat protein or fragment thereof.9. The host cell of wherein the heterologous protein is an antibody.10. (canceled)11. The host cell of wherein the functional fragment of FkpA is a chaperone domain fragment.12. The host cell of wherein the chaperone domain fragment comprises amino acids 26-140 ...

Antibody fragments against the insulin receptor and uses thereof to treat hypoglycemia

The present disclosure relates, in general, to methods of treating or preventing hypoglycemia using a negative modulator antibody fragment that binds to the insulin receptor and modulates the action of insulin at the insulin receptor.

MT-SP1 polynucleotides and polypeptides

This invention provides a novel membrane-type serine protease (designated MT-SP1) elevated expression of which is associated with cancer. In one embodiment, this invention provides a method obtaining a prognosis or of detecting or staging a cancer in an organism. The method involves providing a biological sample from the organism and detecting the level of a membrane type serine protease 1 (MT-SP1) in the sample, where an elevated level of the membrane-type serine protease, as compared to the level of the protease in a biological sample from a normal healthy organism indicates the presence or stage of the cancer.

Semiconductor device and method for manufacturing the same

Stable electrical characteristics and high reliability are provided for a miniaturized semiconductor device including an oxide semiconductor, and the semiconductor device is manufactured. The semiconductor device includes a base insulating layer; an oxide stack which is over the base insulating layer and includes an oxide semiconductor layer; a source electrode layer and a drain electrode layer over the oxide stack; a gate insulating layer over the oxide stack, the source electrode layer, and the drain electrode layer; a gate electrode layer over the gate insulating layer; and an interlayer insulating layer over the gate electrode layer. In the semiconductor device, the defect density in the oxide semiconductor layer is reduced.

Electrode for power storage device and power storage device

An electrode for a power storage device with good cycle characteristics and high charge/discharge capacity is provided. In addition, a power storage device including the electrode is provided. The electrode for the power storage device includes a conductive layer and an active material layer provided over the conductive layer, the active material layer includes graphene and an active material including a plurality of whiskers, and the graphene is provided to be attached to a surface portion of the active material including a plurality of whiskers and to have holes in part of the active material layer. Further, in the electrode for the power storage device, the graphene is provided to be attached to a surface portion of the active material including a plurality of whiskers and to cover the active material including a plurality of whiskers. Further, the power storage device including the electrode is manufactured.

Proteins for the treatment of epithelial barrier function disorders

The disclosure relates to therapeutic proteins and pharmaceutical compositions comprising said proteins, which have utility in treating various human diseases. In particular aspects, the disclosed therapeutic proteins are useful for treating human gastrointestinal inflammatory diseases and gastrointestinal conditions associated with decreased epithelial cell barrier function or integrity. Further, the disclosed therapeutic proteins are useful for treating human inflammatory bowel disease, including inter alia, Crohn's disease and ulcerative colitis.

Manufacturing method of power storage device

It is an object to improve performance of a power storage device, such as cycle characteristics. A power storage device includes a current collector and a crystalline semiconductor layer including a whisker, which is formed on and in close contact with the current collector. Separation of the crystalline semiconductor layer is suppressed by an increase of adhesion, whereby cycle characteristics in which a specific capacity of a tenth cycle number with respect to a first cycle number is greater than or equal to 90% is realized. In addition, cycle characteristics in which a specific capacity of a hundredth cycle number with respect to a first cycle number is greater than or equal to 70% is realized.

POWER STORAGE DEVICE

A power storage device in which silicon is used as a negative electrode active material layer and which can have an improved performance such as higher discharge capacity, and a method for manufacturing the power storage device are provided. A power storage device includes a current collector and a silicon layer having a function as an active material layer over the current collector. The silicon layer includes a thin film portion in contact with the current collector, a plurality of bases, and a plurality of whisker-like protrusions extending from the plurality of bases. A protrusion extending from one of the plurality of bases is partly combined with a protrusion extending from another one of the plurality of bases. 1. A power storage device comprising:a current collector; anda silicon layer having a function as an active material layer over the current collector, a thin film portion in contact with the current collector,', 'a plurality of bases, and', 'a plurality of whisker-like protrusions extending from the plurality of bases, and, 'wherein the silicon layer compriseswherein a whisker-like protrusion extending from one of the plurality of bases is in contact with a whisker-like protrusion extending from another one of the plurality of bases.2. The power storage device according to claim 1 ,wherein the whisker-like protrusion extending from one of the plurality of bases is combined with the whisker-like protrusion extending from another one of the plurality of bases.3. The power storage device according to claim 1 ,wherein the whisker-like protrusion comprises a core formed using crystalline silicon, andwherein amorphous silicon covers the core.4. The power storage device according to claim 1 ,wherein the whisker-like protrusion has a columnar shape such as a cylindrical shape or a prismatic shape, or a needle-like shape such as a conical shape or a pyramidal shape.5. The power storage device according to claim 1 ,wherein the thin film portion comprises ...

Human antibodies that have MN binding and cell adhesion-neutralizing activity

The invention is composed of monoclonal human MN antibodies or MN antibody fragments that target the GEEDLP (SEQ ID NO: 118) repeat within the proteoglycan domain. The proteoglycan domain of the MN cell surface protein contains four of these identical GEEDLP (SEQ ID NO: 118) repeats. Binding to the desired epitope is verified by competition ELISA, where ELISA signal can be attenuated by co-incubation with a peptide containing this repeat (PGEEDLPGEEDLP (SEQ ID NO: 119)). This inhibition of binding can also be verified using Biacore assays, where binding of desired antibodies to immobilized MN or proteoglycan peptides can be inhibited by the peptide repeat. In addition to binding to the peptide repeat, human anti-MN antibodies can inhibit the cell adhesion of CGL-1 cells to MN coated plastic plates. Human anti-MN antibodies have been used to diagnose and quantify MN expression in cancer cells and tumors using FACS and immunohistochemical methods. An example is also provided where a human ...

ELECTRODE FOR POWER STORAGE DEVICE AND POWER STORAGE DEVICE

An electrode for a power storage device with good cycle characteristics and high charge/discharge capacity is provided. In addition, a power storage device including the electrode is provided. The electrode for the power storage device includes a conductive layer and an active material layer provided over the conductive layer, the active material layer includes graphene and an active material including a plurality of whiskers, and the graphene is provided to be attached to a surface portion of the active material including a plurality of whiskers and to have holes in part of the active material layer. Further, in the electrode for the power storage device, the graphene is provided to be attached to a surface portion of the active material including a plurality of whiskers and to cover the active material including a plurality of whiskers. Further, the power storage device including the electrode is manufactured. 1. An electrode for a power storage device , comprising:a conductive layer; andan active material layer over the conductive layer,wherein the active material layer includes graphene, an active material and a hole, wherein the active material has an uneven surface,wherein the graphene is provided to be attached to the uneven surface of the active material, andwherein the hole included in the active material layer is surrounded with the graphene.2. The electrode for a power storage device claim 1 , according to claim 1 ,wherein the active material including a plurality of whiskers includes at least a core and an outer shell provided to cover the core,wherein the core has a structure having crystallinity, andwherein the outer shell has an amorphous structure.3. The electrode for a power storage device claim 1 , according to claim 1 ,wherein the active material including a plurality of whiskers comprises silicon.4. The electrode for a power storage device claim 1 , according to claim 1 ,wherein a material of the conductive layer comprises one selected from the ...

METHOD FOR MANUFACTURING GRAPHENE-COATED OBJECT, NEGATIVE ELECTRODE OF SECONDARY BATTERY INCLUDING GRAPHENE-COATED OBJECT, AND SECONDARY BATTERY INCLUDING THE NEGATIVE ELECTRODE

To form graphene to a practically even thickness on an object having an uneven surface or a complex surface, in particular, an object having a surface with a three-dimensional structure due to complex unevenness, or an object having a curved surface. The object and an electrode are immersed in a graphene oxide solution, and voltage is applied between the object and the electrode. At this time, the object serves as an anode. Graphene oxide is attracted to the anode because of being negatively charged, and deposited on the surface of the object to have a practically even thickness. A portion where graphene oxide is deposited is unlikely coated with another graphene oxide. Thus, deposited graphene oxide is reduced to graphene, whereby graphene can be formed to have a practically even thickness on an object having surface with complex unevenness. 1. A method for manufacturing a graphene-coated object , comprising:immersing an electrode and an object having an uneven surface in a solution including graphene oxide;applying bias voltage to the electrode and the object to deposit the graphene oxide having a substantially even thickness on the uneven surface of the object; andheating the graphene oxide deposited on the uneven surface of the object in a vacuum or a reducing atmosphere to reduce the graphene oxide to graphene.2. The method for manufacturing a graphene-coated object claim 1 , according to claim 1 ,wherein the object has a whisker-like shape.3. The method for manufacturing a graphene-coated object claim 1 , according to claim 1 ,wherein an element other than carbon is contained in the graphene at 30 at. % or less.4. The method for manufacturing a graphene-coated object claim 1 , according to claim 1 ,wherein silicon is used as a material of the object.5. The method for manufacturing a graphene-coated object claim 1 , according to claim 1 ,wherein the object is an electrode of a lithium-ion secondary battery.6. A negative electrode of a secondary battery claim 1 ...

POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME

A power storage device including a negative electrode having high cycle performance in which little deterioration due to charge and discharge occurs is manufactured. A power storage device including a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode is manufactured, in which the negative electrode includes a negative electrode current collector and a negative electrode active material layer, and the negative electrode active material layer includes an uneven silicon layer formed over the negative electrode current collector, a silicon oxide layer or a mixed layer which includes silicon oxide and a silicate compound and is in contact with the silicon layer, and graphene in contact with the silicon oxide layer or the mixed layer including the silicon oxide and the silicate compound. 1. A power storage device comprising:a positive electrode;a negative electrode including a negative electrode current collector and a negative electrode active material layer; andan electrolyte provided between the positive electrode and the negative electrode, an uneven silicon layer formed over the negative electrode current collector;', 'a silicon oxide layer or a mixed layer, wherein the mixed layer includes silicon oxide and a silicate compound, wherein the silicon oxide layer or the mixed layer is in contact with the uneven silicon layer; and', 'graphene in contact with the silicon oxide layer or the mixed layer., 'wherein the negative electrode active material layer includes2. The power storage device according to claim 1 , wherein the silicon oxide layer or the mixed layer has a thickness greater than or equal to 2 nm and less than or equal to 10 nm.3. The power storage device according to claim 1 , wherein the uneven silicon layer includes crystalline silicon.4. The power storage device according to claim 1 , wherein the uneven silicon layer includes amorphous silicon.5. The power storage device ...

BICYCLE SHIFTER

A bicycle shifter is provided with a shifter housing, a winding member and an indicator unit. The winding member is movably coupled to the shifter housing. The indicator unit includes an indicating member and an adjustment member. The indicating member is operatively and adjustably connected to the winding member. The adjustment member adjusts a position of the indicating member relative to the winding member. 1. A bicycle shifter comprising:a shifter housing;a winding member movably coupled to the shifter housing; and an indicating member operatively and adjustably connected to the winding member,', 'an adjustment member adjusting a position of the indicating member relative to the winding member; and', 'a moving member operatively coupled to the winding member such that the moving member moves in response to movement of the winding member, the moving member movably supporting the indicating member, the adjustment member being mounted on the moving member, the movement member remaining still during adjustment of the position of the indicating member by the adjustment member., 'an indicator unit including'}2. The bicycle shifter according to claim 1 , whereinthe indicator unit is an integrated unit that is detachably and reinstallably coupled to the shifter housing.3. (canceled)4. The bicycle shifter according to claim 1 , whereinthe indicator unit further includes an indicator housing that supports the moving member, the indicating member and the adjustment member.5. The bicycle shifter according to claim 4 , whereinthe indicator housing having an access opening that is located such that the adjustment member can be operated from outside of the indicator housing via the access opening such that the position of the indicating member is adjusted6. The bicycle shifter according to claim 4 , whereinthe indicator housing having a connection opening through which the moving member is operatively coupled to the winding member.7. (canceled)8. The bicycle shifter according ...

Negative electrode for non-aqueous secondary battery, non-aqueous secondary battery, and manufacturing methods thereof

A non-aqueous secondary battery which has high charge-discharge capacity, can be charged and discharged at high speed, and has little deterioration in battery characteristics due to charge and discharge is provided. A negative electrode includes a current collector and an active material layer. The current collector includes a plurality of protrusion portions extending in a substantially perpendicular direction and a base portion connected to the plurality of protrusion portions. The protrusion portions and the base portion are formed using the same material containing titanium. Top surfaces and side surfaces of the protrusion portions and a top surface of the base portion are covered with the active material layer. The active material layer includes a plurality of whiskers. The active material layer may be covered with graphene.

POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME

A power storage device including a negative electrode having high cycle performance in which little deterioration due to charge and discharge occurs is manufactured. A power storage device including a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode is manufactured, in which the negative electrode includes a negative electrode current collector and a negative electrode active material layer, and the negative electrode active material layer includes an uneven silicon layer formed over the negative electrode current collector, a silicon oxide layer or a mixed layer which includes silicon oxide and a silicate compound and is in contact with the silicon layer, and graphene in contact with the silicon oxide layer or the mixed layer including the silicon oxide and the silicate compound. 1. A power storage device comprising:a positive electrode;a negative electrode including a negative electrode current collector and a negative electrode active material layer; andan electrolyte provided between the positive electrode and the negative electrode, an uneven silicon layer formed over the negative electrode current collector;', 'a silicon oxide layer or a mixed layer, wherein the mixed layer includes silicon oxide and a silicate compound, wherein the silicon oxide layer or the mixed layer is in contact with the uneven silicon layer; and', 'graphene in contact with the silicon oxide layer or the mixed layer., 'wherein the negative electrode active material layer includes2. The power storage device according to claim 1 , wherein the silicon oxide layer or the mixed layer has a thickness greater than or equal to 2 nm and less than or equal to 10 nm.3. The power storage device according to claim 1 , wherein the uneven silicon layer includes crystalline silicon.4. The power storage device according to claim 1 , wherein the uneven silicon layer includes amorphous silicon.5. The power storage device ...

Bicycle handlebar clamp assembly

A bicycle handlebar clamp assembly has a handlebar clamp, a fixing nut, and a fixing bolt. The fixing nut includes a threaded bore having a bolt entrance opening and a bolt exit opening. The fixing nut defines a bolt shaft receiving space disposed adjacent the bolt exit opening. The fixing bolt includes a head and a shaft extending from the head. The shaft has a non-threaded portion disposed between two threaded portions. One of threaded portions is disposed closer to the head of the fixing bolt than the other threaded portion. The threaded portions are dimensioned to threadedly engage the threaded bore of the fixing nut. The non-threaded portion has a axial length that is greater than the axial length of the threaded bore of the fixing nut.

Semiconductor device

A transistor with a small subthreshold swing value is provided. A transistor with a low density of shallow interface states at an interface between a semiconductor and a gate insulator is provided. A transistor with favorable electrical characteristics is provided. A semiconductor device includes an insulator, a semiconductor, and a conductor. The semiconductor includes a region in which the semiconductor and the conductor overlap each other with the insulator positioned therebetween, and the density of shallow interface states at an interface between the semiconductor and the insulator in the region is lower than or equal to 1×10 13 cm −2 .

Semiconductor device and method for manufacturing semiconductor device

A semiconductor device includes a first conductor; a first insulator thereover; a first oxide thereover; a second oxide thereover; a second conductor and a third conductor that are separate from each other thereover; a third oxide over the first insulator, the second oxide, the second conductor, and the third conductor; a second insulator thereover; a fourth conductor thereover; and a third insulator over the first insulator, the second insulator, and the fourth conductor. The second oxide includes a region where the energy of the conduction band minimum of an energy band is low and a region where the energy of the conduction band minimum of the energy band is high. The energy of the conduction band minimum of the third oxide is higher than that of the region of the second oxide where the energy of the conduction band minimum is low. Side surfaces of the first oxide and the second oxide are covered with the third oxide.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A manufacturing method of a semiconductor device in which the threshold is adjusted to an appropriate value is provided. The semiconductor device includes a semiconductor, a source or drain electrode electrically connected to the semiconductor, a first gate electrode and a second gate electrode between which the semiconductor is sandwiched, an electron trap layer between the first gate electrode and the semiconductor, and a gate insulating layer between the second gate electrode and the semiconductor. By keeping a potential of the first gate electrode higher than a potential of the source or drain electrode for 1 second or more while heating, electrons are trapped in the electron trap layer. Consequently, threshold is increased and Icut is reduced. 1. A semiconductor device comprising:a first gate electrode and a second gate electrode;a semiconductor between the first gate electrode and the second gate electrode;an electrode which is electrically connected to the semiconductor;an electron trap layer between the first gate electrode and the semiconductor; anda gate insulating layer between the second gate electrode and the semiconductor.2. The semiconductor device according to claim 1 , wherein the electron trap layer contains any one of hafnium oxide claim 1 , aluminum oxide claim 1 , tantalum oxide claim 1 , and aluminum silicate.3. The semiconductor device according to claim 1 , wherein the electrode is either a source electrode or a drain electrode.4. The semiconductor device according to claim 1 , wherein the electron trap layer includes a conductive layer.5. The semiconductor device according to claim 1 , wherein the electron trap layer includes a first insulating layer between the semiconductor and the first gate electrode claim 1 , and a second insulating layer between the first insulating layer and the first gate electrode.6. The semiconductor device according to claim 5 , wherein a band gap of the first insulating layer is larger than that of the second ...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A manufacturing method of a semiconductor device in which the threshold voltage is adjusted is provided. The semiconductor device includes a first semiconductor, an electrode electrically connected to the first semiconductor, a gate electrode, and an electron trap layer between the gate electrode and the first semiconductor. By performing heat treatment at higher than or equal to 125° C. and lower than or equal to 450° C. and, at the same time, keeping a potential of the gate electrode higher than a potential of the electrode for 1 second or more, the threshold voltage is increased. 1. A manufacturing method of a semiconductor device comprising:forming a first semiconductor;forming an electron trap layer over the first semiconductor;forming a gate electrode over the electron trap layer;forming an electrode electrically connected to the first semiconductor; andkeeping a potential of the gate electrode higher than a potential of the electrode for 1 second or longer at a temperature higher than or equal to 125° C. and lower than or equal to 450° C. thereby increasing a threshold voltage of the semiconductor device.2. The manufacturing method of the semiconductor device according to claim 1 , wherein the electron trap layer comprises any one of hafnium oxide claim 1 , aluminum oxide claim 1 , and aluminum silicate.3. The manufacturing method of the semiconductor device according to claim 1 , wherein the electrode is either a source electrode or a drain electrode.4. The manufacturing method of the semiconductor device according to claim 1 ,wherein the semiconductor device comprises a second semiconductor and a third semiconductor,wherein the first semiconductor is sandwiched between the second semiconductor and the third semiconductor, andwherein the second semiconductor is provided between the first semiconductor and the electron trap layer.5. The manufacturing method of the semiconductor device claim 4 , according to claim 4 , wherein the first semiconductor claim 4 , ...

SEMICONDUCTOR DEVICE

Provided is a semiconductor device having a structure with which a decrease in electrical characteristics that becomes more significant with miniaturization can be suppressed. The semiconductor device includes a first oxide semiconductor film, a gate electrode overlapping with the first oxide semiconductor film, a first gate insulating film between the first oxide semiconductor film and the gate electrode, and a second gate insulating film between the first gate insulating film and the gate electrode. In the first gate insulating film, a peak appears at a diffraction angle 2θ of around 28° by X-ray diffraction. A band gap of the first oxide semiconductor film is smaller than a band gap of the first gate insulating film, and the band gap of the first gate insulating film is smaller than a band gap of the second gate insulating film. 1. (canceled)2. A semiconductor device comprising: a gate electrode;', 'an oxide semiconductor layer overlapping with the gate electrode; and', 'a first gate insulating film and a second gate insulating film between the gate electrode and the oxide semiconductor layer,, 'a transistor comprisingwherein the first gate insulating film has a dielectric constant higher than the second gate insulating film, andwherein the first gate insulating film is crystallized.3. The semiconductor device according to claim 2 , wherein the first gate insulating film is positioned between the oxide semiconductor layer and the second gate insulating film.4. The semiconductor device according to claim 2 , wherein the first gate insulating film comprises a hafnium oxide.5. The semiconductor device according to wherein the first gate insulating film has a peak at a diffraction angle 2θ of around 28° measured with an X-ray diffraction.6. The semiconductor device according to claim 4 , wherein a film density of the first gate insulating film is greater than or equal to 8.3 g/cmand less than or equal to 9.0 g/cm.7. The semiconductor device according to claim 2 , ...

SEMICONDUCTOR DEVICE

A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. The semiconductor device includes an oxide semiconductor film over an insulating surface, an antioxidant film over the insulating surface and the oxide semiconductor film, a pair of electrodes in contact with the antioxidant film, a gate insulating film over the pair of electrodes, and a gate electrode which is over the gate insulating film and overlaps with the oxide semiconductor film. In the antioxidant film, a width of a region overlapping with the pair of electrodes is longer than a width of a region not overlapping with the pair of electrodes. 1. A method for manufacturing a semiconductor device comprising the steps of:introducing oxygen into an insulating surface;forming an oxide semiconductor film over the insulating surface;forming a layer over the oxide semiconductor film and the insulating surface;forming a conductive layer over the layer;processing the layer and the conductive layer into an island-shaped film and an island-shaped conductive film, respectively;processing the island-shaped film and the island-shaped conductive film into a film and a pair of electrodes, respectively;forming a first gate insulating film over the film and the pair of electrodes; andforming a first gate electrode over the first gate insulating film, the first gate electrode overlapping with the oxide semiconductor film,wherein the film is capable of blocking oxygen,wherein the film includes a pair of first regions and a second region,wherein the pair of first regions overlaps with the pair of electrodes,wherein the second region does not overlap with the pair of electrodes,wherein the second region overlaps with the first gate electrode, andwherein a width of each of the pair of first regions is longer than a width of the second region in a channel width directionwherein at least one of the first gate insulating film ...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A manufacturing method of a semiconductor device in which the threshold is corrected is provided. In a semiconductor device including a plurality of transistors each includes a semiconductor, a source or drain electrode electrically connected to the semiconductor, a gate electrode, and a charge trap layer between the gate electrode and the semiconductor, electrons are trapped in the charge trap layer by performing heat treatment and, simultaneously, keeping a potential of the gate electrode higher than that of the source or drain electrode for 1 second or more. By this process, the threshold increases and Icut decreases. A circuit for supplying a signal to the gate electrode and a circuit for supplying a signal to the source or drain electrode are electrically separated from each other. The process is performed in the state where the potential of the former circuit is set higher than the potential of the latter circuit. 1. A manufacturing method of a semiconductor device comprising:a plurality of transistors arranged in a matrix, the transistors each comprising a first semiconductor, an electrode electrically connected to the first semiconductor, a gate electrode, and a charge trap layer between the gate electrode and the first semiconductor,a first circuit configured to supply a first signal to the gate electrodes of the plurality of transistors,a second circuit configured to supply a second signal to the electrodes of the plurality of transistors,a first wiring and a second wiring electrically connected to the first circuit, and setting a first potential of the first wiring at a potential higher than a second potential of the third wiring by 1 V or more,', 'performing heat treatment on the plurality of transistors at a temperature higher than or equal to 125° C. and lower than or equal to 450° C., and', 'applying a third potential of the gate electrode higher than a fourth potential of the electrode for 1 second or more during the heat treatment., 'a third wiring ...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided. 1. A semiconductor device comprising:a first insulator;an oxide semiconductor layer over the first insulator;a second insulator comprising an opening over the oxide semiconductor layer;a gate insulating film over the oxide semiconductor layer;a gate electrode over the gate insulating film;wherein the oxide semiconductor layer comprises In, Ga, and Zn,wherein the first insulator and the second insulator comprise silicon oxide,wherein the gate insulating film and the gate electrode are in the opening,wherein the second insulator is in contact with the first insulator, andwherein a top surface of the second insulator and a top surface of the gate electrode are coplanar.2. A semiconductor device comprising:a first insulator;an oxide semiconductor layer comprising a channel formation region over the first insulator;a second insulator comprising an opening over the oxide semiconductor layer;a gate insulating film over the oxide semiconductor layer;a gate electrode over the gate insulating film;wherein the oxide semiconductor layer comprises In, Ga, and Zn,wherein the first insulator and the second insulator comprise silicon oxide,wherein the gate insulating film and the gate electrode are in the opening,wherein the second insulator is in contact with the first insulator to supply oxygen from the second insulator to a bottom surface side of the channel formation region through the first insulator, andwherein a top surface of the second insulator and a top surface of the gate electrode are coplanar.3. A semiconductor device comprising:a first insulator;a second insulator over the first insulator;an oxide semiconductor layer comprising a channel formation region over the second insulator;a third insulator comprising an opening over the oxide semiconductor layer;a gate insulating film over the oxide semiconductor layer;a gate electrode over the gate insulating film; ...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A manufacturing method of a semiconductor device in which the threshold is adjusted is provided. In a semiconductor device including a plurality of transistors arranged in a matrix each including a semiconductor, a source or drain electrode electrically connected to the semiconductor, a gate electrode, and a charge trap layer between the gate electrode and the semiconductor, electrons are trapped in the charge trap layer by performing heat treatment and, simultaneously, keeping a potential of the gate electrode higher than that of the source or drain electrode for 1 second or more. By this process, the threshold increases and Icut decreases. A circuit that supplies a signal to the gate electrode (e.g., word line driver) is provided with a selection circuit formed of an OR gate, an XOR gate, or the like, whereby potentials of word lines can be simultaneously set higher than potentials of bit lines. 1. A semiconductor device comprising: a first semiconductor;', 'an electrode electrically connected to the first semiconductor;', 'a gate electrode; and', 'a charge trap layer between the gate electrode and the first semiconductor;, 'a plurality of transistors each comprisinga first circuit configured to supply a signal to the gate electrode of the plurality of transistors; anda second circuit configured to supply a signal to the electrode of the plurality of transistors,wherein the first circuit includes a decoder and a selection circuit,wherein a signal output from the decoder and a first signal are input to the selection circuit,wherein a second signal is output from the selection circuit to the gate electrode, andwherein the selection circuit performs an XOR operation.2. The semiconductor device according to claim 1 , wherein the charge trap layer includes charge trap states.3. The semiconductor device according to claim 1 , wherein the charge trap layer comprises any one of silicon nitride claim 1 , hafnium oxide claim 1 , aluminum oxide claim 1 , and aluminum ...

SEMICONDUCTOR DEVICE AND METHOD FOR MEASURING CURRENT OF SEMICONDUCTOR DEVICE

A current measurement method with which an extremely low current can be measured is provided. In the method, a charge written to a first terminal of a capacitor through a transistor under test is retained, data on the correspondence between a potential V of the first terminal of the capacitor and Time t is generated, and a stretched exponential function represented by Formula (a1) is fitted to the data to determine parameters of Formula (a1). The derivative of Formula (a1) with respect to time gives a stretched exponential function describing an off-state current of the transistor under test. The potential of the first terminal of the capacitor is measured using an on-state current of a transistor whose gate is connected to the first terminal of the capacitor. 2. The current measurement method according to claim 1 ,wherein a gate of the transistor is electrically connected to the first terminal of the capacitor, andwherein the potential of the first terminal of the capacitor is measured by measuring a current flowing between a source and a drain of the transistor.3. The current measurement method according to claim 1 , wherein maximum measuring time is greater than or equal to 5×10seconds and less than or equal to 1×10seconds.4. The current measurement method according to claim 1 , wherein the transistor comprises an oxide semiconductor in a channel.6. The transistor according to claim 5 , wherein the off-state current at room temperature is less than 1×10A when t is 1×10seconds.7. The transistor according to claim 5 , wherein the channel comprises an oxide semiconductor.9. The semiconductor device according to claim 8 , wherein the off-state current at room temperature is less than 1×10A when t is 1×10seconds.10. The semiconductor device according to claim 8 , wherein the channel comprises an oxide semiconductor. 1. Field of the InventionOne embodiment of the present invention relates to a semiconductor device and a method for measuring a current of the ...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening. 1. A semiconductor device comprising:a first conductor;a second conductor over the first conductor;a first insulator covering the second conductor;a first oxide over the first insulator; anda second oxide over the first oxide,wherein an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, andwherein the second oxide is electrically connected to the first conductor through the opening.2. The semiconductor device according to claim 1 , wherein an end portion of the second oxide is substantially aligned with an end portion of the first oxide.3. The semiconductor device according to claim 1 , further comprising:a third conductor;a fourth conductor over the third conductor;a third oxide over the second oxide;a second insulator over the third oxide; anda fifth conductor over the second insulator,wherein the fourth conductor is covered with the first insulator, andwherein the fifth conductor overlaps with the third conductor and the fourth conductor with the first insulator, the first oxide, the second oxide, the third oxide, and the second insulator interposed therebetween.4. The semiconductor device according to claim 3 ,wherein the first conductor and the third conductor contain the same material, andwherein the second conductor and the fourth conductor contain the same material.5. The semiconductor device according to claim 1 , wherein the second conductor includes a metal nitride.6. The ...

Method for manufacturing graphene-coated object, negative electrode of secondary battery including graphene-coated object, and secondary battery including the negative electrode

To form graphene to a practically even thickness on an object having an uneven surface or a complex surface, in particular, an object having a surface with a three-dimensional structure due to complex unevenness, or an object having a curved surface. The object and an electrode are immersed in a graphene oxide solution, and voltage is applied between the object and the electrode. At this time, the object serves as an anode. Graphene oxide is attracted to the anode because of being negatively charged, and deposited on the surface of the object to have a practically even thickness. A portion where graphene oxide is deposited is unlikely coated with another graphene oxide. Thus, deposited graphene oxide is reduced to graphene, whereby graphene can be formed to have a practically even thickness on an object having surface with complex unevenness.

SEMICONDUCTOR DEVICE

Provided is a semiconductor device having a structure with which a decrease in electrical characteristics that becomes more significant with miniaturization can be suppressed. The semiconductor device includes a first oxide semiconductor film, a gate electrode overlapping with the first oxide semiconductor film, a first gate insulating film between the first oxide semiconductor film and the gate electrode, and a second gate insulating film between the first gate insulating film and the gate electrode. In the first gate insulating film, a peak appears at a diffraction angle 2θ of around 28° by X-ray diffraction. A band gap of the first oxide semiconductor film is smaller than a band gap of the first gate insulating film, and the band gap of the first gate insulating film is smaller than a band gap of the second gate insulating film. 1. A semiconductor device comprising: a first gate electrode;', 'a semiconductor layer comprising a channel formation region and overlapping with the first gate electrode;', 'a first insulating film between the first gate electrode and the semiconductor layer;', 'a second insulating film between the first gate electrode and the first insulating film; and', 'a source electrode and a drain electrode each in contact with a side surface of the semiconductor layer,, 'a transistor comprisingwherein the semiconductor layer comprises indium, zinc, and oxygen, a first semiconductor film;', 'a second semiconductor film over the first semiconductor film; and', 'a third semiconductor film over the second semiconductor film, and, 'wherein the semiconductor layer compriseswherein the first insulating film has a higher dielectric constant than the second insulating film.2. The semiconductor device according to claim 1 , wherein each of the source electrode and the drain electrode is in contact with an upper surface of the second semiconductor film and a lower surface of the third semiconductor film.3. The semiconductor device according to claim 1 , ...

ELECTRODE FOR POWER STORAGE DEVICE AND POWER STORAGE DEVICE

An electrode for a power storage device with good cycle characteristics and high charge/discharge capacity is provided. In addition, a power storage device including the electrode is provided. The electrode for the power storage device includes a conductive layer and an active material layer provided over the conductive layer, the active material layer includes graphene and an active material including a plurality of whiskers, and the graphene is provided to be attached to a surface portion of the active material including a plurality of whiskers and to have holes in part of the active material layer. Further, in the electrode for the power storage device, the graphene is provided to be attached to a surface portion of the active material including a plurality of whiskers and to cover the active material including a plurality of whiskers. Further, the power storage device including the electrode is manufactured. 1. An electrode for a power storage device , comprising:a conductive layer; andan active material layer over the conductive layer,wherein the active material layer includes graphene and an active material including a plurality of whiskers,wherein the graphene is provided to be attached to a surface of the active material including a plurality of whiskers, andwherein the graphene covers the active material including a plurality of whiskers.2. The electrode for a power storage device claim 1 , according to claim 1 , wherein the graphene is provided to be spread continuously over the active material including a plurality of whiskers in a plan view of the active material layer.3. The electrode for a power storage device claim 1 , according to claim 1 ,wherein the active material including a plurality of whiskers includes at least a core and an outer shell provided to cover the core,wherein the core comprises a structure having crystallinity, andwherein the outer shell comprises an amorphous structure.4. The electrode for a power storage device claim 1 , ...

BICYCLE OPERATING DEVICE

A bicycle operating device comprises an operating unit, a mounting member, and a positioning structure. The operating unit includes a first portion. The mounting member includes a second portion configured to be connected with the first portion of the operating unit. The positioning structure is configured to adjustably position the first portion with respect to the second portion in a first direction and a second direction. The positioning structure comprises an abutment member and a fixing member. The abutment member is arranged opposite to the first portion with respect to the second portion. The fixing member is configured to fix the second portion with respect to the first portion by sandwiching the second portion between the first portion and the abutment member. 1. A bicycle operating device comprising:an operating unit configured to operate a bicycle component and including a first portion;a mounting member configured to be mounted to a bicycle tube member and including a second portion configured to be connected with the first portion of the operating unit; and an abutment member arranged opposite to the first portion with respect to the second portion; and', 'a fixing member configured to fix the second portion with respect to the first portion by sandwiching the second portion between the first portion and the abutment member., 'a positioning structure configured to adjustably position the first portion with respect to the second portion in a first direction and a second direction being different from the first direction, the positioning structure comprising2. The bicycle operating device according to claim 1 , whereinthe first direction is parallel to an axial direction of the bicycle tube member.3. The bicycle operating device according to claim 2 , whereinthe second direction is parallel to a circumferential direction of the bicycle tube member.4. The bicycle operating device according to claim 3 , whereinthe first portion has a first elongated hole ...

Bicycle operating device

A bicycle operating device comprises a mounting clamp and an adapter member. The mounting clamp is configured to be mounted to a bicycle tube member and comprises a first radius portion, a second radius portion, and a clamp opening. The first radius portion defines a first inner radius. The second radius portion defines a second inner radius different from the first inner radius. The bicycle tube member is to extend through the clamp opening. The clamp opening is defined by the first radius portion and the second radius portion. The adapter member is configured to be provided between the second radius portion and the bicycle tube member in a state where the mounting clamp is mounted to the bicycle tube member.

BICYCLE OPERATING DEVICE

A bicycle operating device comprises a mounting clamp and a restricting structure. The mounting clamp is configured to be mounted to a bicycle tube member. The mounting clamp comprises a first radius portion, a second radius portion, and a clamp opening The first radius portion defines a first inner radius. The second radius portion defines a second inner radius different from the first inner radius. The bicycle tube member is to extend through the clamp opening. The clamp opening is defined by the first radius portion and the second radius portion. The restricting structure is provided on the second radius portion and is configured to restrict relative movement between the second radius portion and an adapter member at least in a circumferential direction of the second radius portion. 1. A bicycle operating device comprising: a first radius portion defining a first inner radius;', 'a second radius portion defining a second inner radius different from the first inner radius; and', 'a clamp opening through which the bicycle tube member is to extend, the clamp opening being defined by the first radius portion and the second radius portion; and, 'a mounting clamp configured to be mounted to a bicycle tube member and comprisinga restricting structure provided on the second radius portion and configured to restrict relative movement between the second radius portion and an adapter member at least in a circumferential direction of the second radius portion.2. The bicycle operating device according to claim 1 , whereinthe second radius portion includes an inner peripheral surface defining the second inner radius, andthe restricting structure includes a restricting part provided on the inner peripheral surface of the second radius portion and configured to restrict the relative movement between the second radius portion and the adapter member at least in the circumferential direction.3. The bicycle operating device according to claim 2 , whereinthe restricting part includes ...

Antibodies That Bind Interleukin-2 and Uses Thereof

The present disclosure relates, in general, to human antibodies against human interleukin 2 (IL-2) and methods of use of such antibodies for modulating IL-2 activity and use in the treatment of conditions such as cancer, autoimmune disease, or infection. 1. A human or humanized antibody that binds human interleukin-2 (IL-2) with an affinity Kof 1×10M or less and inhibits binding of IL-2 with an IL-2 receptor alpha (IL-2 Rα) subunit ,wherein the antibody inhibits IL-2 signaling through IL-2 Rα h and through IL-2 Rβγ, andwherein the antibody inhibits IL-2 signaling through IL-2 Rα h to a greater extent than through IL-2 Rβγ.2. The antibody of wherein the antibody does not completely block binding of human IL-2 to cells expressing human or mouse IL-2 RR or IL-2 Rβγ complex.3. The antibody of claim 1 , wherein the antibody binds at a site allosteric to binding of IL-2 to IL-2 Rα claim 1 , IL-2 Rβγ or IL-2 Rαβγ.4. The antibody of claim 1 , wherein the antibody is a negative modulator antibody claim 1 , optionally wherein the antibody is capable of weakening the binding affinity between IL-2 with IL-2 receptor α (IL-2 Rα) by at least about 2-fold claim 1 , optionally up to 1000-fold.5. The antibody of wherein IL-2 complexed to the antibody binds to CHO cells expressing IL-2 Rβ and γc with an EC50 of 5 nM or less or wherein IL-2 complexed to the antibody binds to CHO cells expressing IL-2 Rβ (but not γc) with an EC50 of 100 nM or less.6. The antibody of wherein the antibody binds to human IL-2 and one or more of mouse claim 1 , rat or rabbit IL-2.7. The antibody of claim 1 , wherein the antibody inhibits IL-2 stimulation of STAT5 activation in cells expressing IL-2 Rα claim 1 , IL-2 Rβ claim 1 , and γc to a greater extent than cells expressing IL-2 Rβ and γc claim 1 , but not IL-2 Rα.8. The antibody of claim 1 , wherein the antibody inhibits IL-2 stimulation of STAT5 activation in cells that express IL-2 Rα claim 1 , IL-2 Rβ claim 1 , and γc by 200-fold or greater.9. The ...

Method for evaluating semiconductor device

A method for evaluating a buried channel in a semiconductor device including a semiconductor layer having a stacked-layer structure is provided. A method for evaluating a semiconductor device is provided, which includes the steps of: electrically short-circuiting a source and a drain of a transistor; applying DC voltage and AC voltage to a gate to obtain a CV characteristic that indicates a relationship between the DC voltage and a capacitance between the gate and each of the source and the drain; and determining that a semiconductor layer of the transistor includes a stacked-layer structure, when the capacitance in a region in an accumulation state in the CV characteristic is increased stepwise.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Stable electrical characteristics and high reliability are provided for a miniaturized semiconductor device including an oxide semiconductor, and the semiconductor device is manufactured. The semiconductor device includes a base insulating layer; an oxide stack which is over the base insulating layer and includes an oxide semiconductor layer; a source electrode layer and a drain electrode layer over the oxide stack; a gate insulating layer over the oxide stack, the source electrode layer, and the drain electrode layer; a gate electrode layer over the gate insulating layer; and an interlayer insulating layer over the gate electrode layer. In the semiconductor device, the defect density in the oxide semiconductor layer is reduced. 1. (canceled)2. A semiconductor device comprising: an oxide layer; and', 'an oxide semiconductor layer over the oxide layer, wherein an electron affinity of the oxide semiconductor layer is higher than an electron affinity of the oxide layer by 0.1 eV or more;, 'an oxide stack comprisinga gate insulating layer in contact with the oxide stack; anda gate electrode layer overlapping with the oxide stack with the gate insulating layer there between,{'sup': 12', '2', '12', '2, 'wherein a spin density corresponding to a signal at a g-factor of greater than or equal to 1.90 and less than or equal to 1.95 is 1.5×10spins/cmor less and a spin density corresponding to a signal at a g-factor of greater than or equal to 2.00 and less than or equal to 2.01 is 2×10spins/cmor more in electron spin resonance spectroscopy.'}3. The semiconductor device according to claim 2 ,wherein the oxide semiconductor layer and the oxide layer comprise indium, andwherein a proportion of indium in the oxide semiconductor layer is higher than a proportion of indium in the oxide layer.4. The semiconductor device according to claim 2 , wherein the oxide semiconductor layer and the oxide layer comprise indium claim 2 , gallium claim 2 , and zinc.5. The semiconductor device ...

Semiconductor Device and Method for Manufacturing Semiconductor Device

A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes an oxide in a channel formation region; the semiconductor device includes a first transistor, a second transistor, a first wiring, a second wiring, and a third wiring, and the first transistor includes the oxide over a first insulator, a second insulator over the oxide, a first conductor over the second insulator, a third insulator over the first conductor, and a fourth insulator in contact with the second insulator, the first conductor, and the third insulator. The second transistor includes the oxide over a fifth insulator, a sixth insulator over the oxide, a second conductor over the sixth insulator, a seventh insulator over the second conductor, and an eighth insulator in contact with the sixth insulator, the second conductor, and the seventh insulator.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A highly integrated semiconductor device is provided. 1. A semiconductor device comprising:an oxide semiconductor comprising a first region, a second region, a third region adjacent to the first region and the second region, and a fourth region adjacent to the second region;a first insulator over the oxide semiconductor;a first conductor over the first insulator;a second insulator over the oxide semiconductor, the first insulator, and the first conductor;a third insulator facing a side surface of the first insulator and a side surface of the first conductor with the second insulator therebetween;a fourth insulator over the second insulator and the third insulator; anda second conductor in contact with the oxide semiconductor,wherein the first region overlaps with the fourth insulator with the first insulator and the first conductor therebetween,wherein the second region overlaps with the fourth insulator with the second insulator therebetween,wherein the third region overlaps with the fourth insulator with the second insulator and the third insulator therebetween,wherein the fourth region overlaps with the second conductor,wherein the second insulator contains a metal oxide,wherein in the second insulator, a film thickness in a region overlapping with the second region is smaller than a film thickness in a region overlapping with the third region, andwherein the fourth insulator is a film containing hydrogen or nitrogen.2. The semiconductor device according to claim 1 , wherein the second insulator contains aluminum oxide.3. The semiconductor device according to claim 1 , wherein the fourth insulator contains silicon nitride.4. The semiconductor device according to claim 1 ,wherein the film thickness of the second insulator in the region overlapping with the third region is greater than or equal to 3.0 nm, andwherein the film thickness of the second insulator in the region overlapping with the second region is less than or equal to 3.0 nm.5. A semiconductor device ...

BICYCLE HANDLEBAR CLAMP and bicycle handlebar clampassembly

A bicycle handlebar clamp is configured to be attached on a handlebar. The bicycle handlebar clamp includes an outer surface, a handlebar engagement surface and an attachment bore. The handlebar engagement surface is configured to be engaged with the handlebar. The fixing nut receiving aperture is configured to receive a fixing nut. The fixing nut receiving aperture extends through the handlebar clamp from the outer surface to the handlebar engagement surface. The attachment bore is configured to receive an attachment pin. The attachment bore and the fixing nut receiving aperture intersect each other. A bicycle handlebar clamp assembly is provided with the bicycle handlebar clamp.

SEMICONDUCTOR DEVICE

A semiconductor device that can be scaled down or highly integrated is provided. The semiconductor device includes a first layer and a second layer over the first layer. The first layer and the second layer each include a transistor. The transistor in the first layer and the transistor in the second layer each include a first oxide, a first conductor and a second conductor over the first oxide, a first insulator placed to cover the first conductor, the second conductor, and the first oxide, a second insulator over the first insulator, a second oxide placed between the first conductor and the second conductor over the first oxide, a third insulator over the second oxide, a third conductor over the third insulator, and a fourth insulator in contact with a top surface of the second insulator, a top surface of the second oxide, a top surface of the third insulator, and a top surface of the third conductor. The first insulator and the fourth insulator are less likely than the second insulator to allow oxygen to pass through. 1. A semiconductor device comprising:a first layer and a second layer over the first layer,wherein the first layer and the second layer each comprise a transistor, a first oxide;', 'a first conductor and a second conductor over the first oxide;', 'a first insulator placed to cover the first conductor, the second conductor, and the first oxide;', 'a second insulator over the first insulator;', 'a second oxide placed between the first conductor and the second conductor over the first oxide;', 'a third insulator over the second oxide;', 'a third conductor over the third insulator; and', 'a fourth insulator in contact with a top surface of the second insulator, a top surface of the second oxide, a top surface of the third insulator, and a top surface of the third conductor, and, 'wherein the transistor in the first layer and the second layer compriseswherein the first insulator and the fourth insulator are less likely than the second insulator to allow ...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor device that can be miniaturized or highly integrated is provided. 1. A semiconductor device comprising:a transistor; and a first electrode, the first electrode being part of an oxide of which a part functions as a channel of the transistor;', 'an insulator over the first electrode; and', 'a second electrode, the second electrode being a first conductor provided over the insulator., 'a capacitor, the capacitor comprising2. A semiconductor device comprising:a transistor; and a first electrode, the first electrode being part of an oxide stack of which a part functions as a channel of the transistor;', 'an insulator over the first electrode; and', 'a second electrode, the second electrode being a first conductor provided over the insulator., 'a capacitor, the capacitor comprising3. The semiconductor device according to claim 1 , further comprising:a second conductor,wherein the second conductor, the oxide, and the first conductor overlap each other.4. The semiconductor device according to claim 2 , further comprising:a second conductor,wherein the second conductor, the oxide stack, and the first conductor overlap each other.5. The semiconductor device according to claim 3 ,wherein the oxide is provided within the first conductor when seen from above, andwherein the second conductor is provided within the oxide when seen from above.6. The semiconductor device according to claim 4 ,wherein the oxide stack is provided within the first conductor when seen from above, andwherein the second conductor is provided within the oxide stack when seen from above.7. The semiconductor device according to claim 5 , further comprising:an opening,wherein the opening is provided within the second conductor.8. The semiconductor device according to claim 6 , further comprising:an opening,wherein the opening is provided within the second conductor.9. The semiconductor device according to claim 7 , wherein the oxide extents in a first direction intersecting a gate electrode of ...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor device includes a first conductor; a first insulator thereover; a first oxide thereover; a second oxide thereover; a second conductor and a third conductor that are separate from each other thereover; a third oxide over the first insulator, the second oxide, the second conductor, and the third conductor; a second insulator thereover; a fourth conductor thereover; and a third insulator over the first insulator, the second insulator, and the fourth conductor. The second oxide includes a region where the energy of the conduction band minimum of an energy band is low and a region where the energy of the conduction band minimum of the energy band is high. The energy of the conduction band minimum of the third oxide is higher than that of the region of the second oxide where the energy of the conduction band minimum is low. Side surfaces of the first oxide and the second oxide are covered with the third oxide. 1. A method for manufacturing a semiconductor device , comprising the steps of:forming a first conductor;forming a first insulator over the first conductor;performing first heat treatment after the first insulator is formed;forming a first oxide over the first insulator;forming a second oxide over the first oxide at a substrate temperature of higher than or equal to 100° C. and lower than 140° C. with a proportion of an oxygen gas of higher than or equal to 0% and lower than or equal to 30%;forming a second conductor and a third conductor over the second oxide so that the second conductor and the third conductor are separate from each other;forming a third oxide over the first insulator, the second oxide, the second conductor, and the third conductor at a substrate temperature of higher than or equal to room temperature and lower than 200° C. with a proportion of an oxygen gas of higher than or equal to 70% to cover the first oxide and the second oxide;forming a second insulator over the third oxide;performing second heat treatment after the second ...

PROTEINS FOR THE TREATMENT OF EPITHELIAL BARRIER FUNCTION DISORDERS

The disclosure relates to therapeutic proteins and pharmaceutical compositions comprising said proteins, which have utility in treating various human diseases. In particular aspects, the disclosed therapeutic proteins are useful for treating human gastrointestinal inflammatory diseases and gastrointestinal conditions associated with decreased epithelial cell barrier function or integrity. Further, the disclosed therapeutic proteins are useful for treating human inflammatory bowel disease, including inter alia, Crohn's disease and ulcerative colitis. 1. A method of treating a gastrointestinal epithelial cell barrier function disorder , comprising: i. a therapeutic protein comprising an amino acid sequence having at least about 85% sequence identity to SEQ ID NO: 19; and', 'ii. a pharmaceutically acceptable carrier., 'a. administering to a patient in need thereof a pharmaceutical composition, comprising2. (canceled)3. (canceled)4. (canceled)5Clostridium difficile. The method of claim 1 , wherein the gastrointestinal epithelial cell barrier function disorder is at least one selected from the group consisting of: inflammatory bowel disease claim 1 , Crohn's disease claim 1 , ulcerative colitis claim 1 , pouchitis claim 1 , irritable bowel syndrome claim 1 , enteric infections claim 1 , infections claim 1 , metabolic diseases claim 1 , obesity claim 1 , type 2 diabetes claim 1 , non-alcoholic steatohepatitis claim 1 , non-alcoholic fatty liver disease claim 1 , liver disorders claim 1 , alcoholic steatohepatitis claim 1 , celiac disease claim 1 , necrotizing enterocolitis claim 1 , gastro intestinal disorders claim 1 , short bowel syndrome claim 1 , GI mucositis claim 1 , chemotherapy induced mucositis claim 1 , radiation induced mucositis claim 1 , oral mucositis claim 1 , interstitial cystitis claim 1 , neurological disorders claim 1 , cognitive disorders claim 1 , Alzheimer's claim 1 , Parkinson's claim 1 , multiple sclerosis claim 1 , autism claim 1 , chemotherapy ...

ANTIBODIES THAT BIND INTERLEUKIN-2 AND USES THEREOF

The present disclosure relates, in general, to human antibodies against human interleukin 2 (IL-2) and methods of use of such antibodies for modulating IL-2 activity and use in the treatment of conditions such as cancer, autoimmune disease, or infection. 1. A human or humanized antibody that binds human interleukin-2 (IL-2) with an affinity Kof 1×10° M or less and inhibits binding of IL-2 with an IL-2 receptor alpha (IL-2 Rα) subunit ,wherein the antibody inhibits IL-2 signaling through IL-2 Rαβγ and through IL-2 Rβγ, andwherein the antibody inhibits IL-2 signaling through IL-2 Rαβγ to a greater extent than through IL-2 Rβγ.2. The antibody of wherein the antibody does not completely block binding of human IL-2 to cells expressing human or mouse IL-2 Rβ or IL-2 Rβγ complex.3. The antibody of any one of the preceding claims claim 1 , wherein the antibody binds at a site allosteric to binding of IL-2 to IL-2 Rα claim 1 , IL-2 Rβγ or IL-2 Rαβγ.4. The antibody of any one of the preceding claims claim 1 , wherein the antibody is a negative modulator antibody claim 1 , optionally wherein the antibody is capable of weakening the binding affinity between IL-2 with IL-2 receptor α (IL-2 Rα) by at least about 2-fold claim 1 , optionally up to 1000-fold.5. The antibody of any one of the preceding claims wherein IL-2 complexed to the antibody binds to CHO cells expressing IL-2 Rβ and γc with an EC50 of 5 nM or less or wherein IL-2 complexed to the antibody binds to CHO cells expressing IL-2 Rβ (but not γc) with an EC50 of 100 nM or less.6. The antibody of any one of the preceding claims wherein the antibody binds to human IL-2 and one or more of mouse claim 1 , rat or rabbit IL-2.7. The antibody of any one of the preceding claims claim 1 , wherein the antibody inhibits IL-2 stimulation of STAT5 activation in cells expressing IL-2 Rα claim 1 , IL-2 Rβ claim 1 , and γc to a greater extent than cells expressing IL-2 Rβ and γc claim 1 , but not IL-2 Rα.8. The antibody of any one of ...

Method for manufacturing graphene-coated object, negative electrode of secondary battery including graphene-coated object, and secondary battery including the negative electrode

To form graphene to a practically even thickness on an object having an uneven surface or a complex surface, in particular, an object having a surface with a three-dimensional structure due to complex unevenness, or an object having a curved surface. The object and an electrode are immersed in a graphene oxide solution, and voltage is applied between the object and the electrode. At this time, the object serves as an anode. Graphene oxide is attracted to the anode because of being negatively charged, and deposited on the surface of the object to have a practically even thickness A portion where graphene oxide is deposited is unlikely coated with another graphene oxide. Thus, deposited graphene oxide is reduced to graphene, whereby graphene can be formed to have a practically even thickness on an object having surface with complex unevenness.

SEMICONDUCTOR DEVICE AND METHOD FOR MEASURING CURRENT OF SEMICONDUCTOR DEVICE

A semiconductor device in which a transistor has the characteristic of low off-state current is provided. The transistor comprises an oxide semiconductor layer having a channel region whose channel width is smaller than 70 nm. A temporal change in off-state current of the transistor over time can be represented by Formula (a2). In Formula (a2), Irepresents the off-state current, t represents time during which the transistor is off, α and τ are constants, β is a constant that satisfies 0<β≤1, and Cis a constant that represents load capacitance of a source or a drain. 2. The current measurement method according to claim 1 ,wherein a gate of the transistor is electrically connected to the first terminal of the capacitor, andwherein the potential of the first terminal of the capacitor is measured by measuring a current flowing between a source and a drain of the transistor.3. The current measurement method according to claim 1 , wherein maximum measuring time is greater than or equal to 5×10seconds and less than or equal to 1×10seconds.4. The current measurement method according to claim 1 , wherein the transistor comprises an oxide semiconductor in a channel. One embodiment of the present invention relates to a semiconductor device and a method for measuring a current of the semiconductor device.The present invention relates to an object, a method, or a manufacturing method. In addition, the present invention relates to a process, a machine, manufacture, or a composition of matter. One embodiment of the present invention relates to a display device, a light-emitting device, a power storage device, a memory device, a driving method thereof, or a manufacturing method thereof.In this specification and the like, a semiconductor device generally means a device that can function by utilizing semiconductor characteristics. In some cases, a display device, an electro-optical device, a semiconductor circuit, or an electronic device includes a semiconductor device.Attention has ...

PROTEINS FOR THE TREATMENT OF EPITHELIAL BARRIER FUNCTION DISORDERS

The disclosure relates to therapeutic proteins and pharmaceutical compositions comprising said proteins, which have utility in treating various human diseases. In particular aspects, the disclosed therapeutic proteins are useful for treating human gastrointestinal inflammatory diseases and gastrointestinal conditions associated with decreased epithelial cell barrier function or integrity. Further, the disclosed therapeutic proteins are useful for treating human inflammatory bowel disease, including inter alia, Crohn's disease and ulcerative colitis. 119.-. (canceled)20. A method of treating a gastrointestinal epithelial cell barrier function disorder , comprising: i. a therapeutic protein comprising an amino acid sequence having at least about 85% sequence identity to SEQ ID NO: 3, SEQ ID NO: 7, SEQ ID NO: 11, SEQ ID NO: 13, SEQ ID NO: 15, and/or SEQ ID NO: 17; and', 'ii. a pharmaceutically acceptable carrier., 'a. administering to a patient in need thereof a pharmaceutical composition, comprising21. The method of claim 20 , wherein the gastrointestinal epithelial cell barrier function disorder is at least one selected from the group consisting of: inflammatory bowel disease claim 20 , Crohn's disease claim 20 , ulcerative colitis claim 20 , pouchitis claim 20 , irritable bowel syndrome claim 20 , enteric infections claim 20 , Clostridium difficile infections claim 20 , metabolic diseases claim 20 , obesity claim 20 , type 2 diabetes claim 20 , non-alcoholic steatohepatitis claim 20 , non-alcoholic fatty liver disease claim 20 , liver disorders claim 20 , alcoholic steatohepatitis claim 20 , celiac disease claim 20 , necrotizing enterocolitis claim 20 , gastro intestinal disorders claim 20 , short bowel syndrome claim 20 , GI mucositis claim 20 , chemotherapy induced mucositis claim 20 , radiation induced mucositis claim 20 , oral mucositis claim 20 , interstitial cystitis claim 20 , neurological disorders claim 20 , cognitive disorders claim 20 , Alzheimer's claim ...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a conductor, a first insulator in contact with a side surface of the conductor, a second insulator in contact with a top surface of the conductor and a top surface of the first insulator, and an oxide over the second insulator. The oxide includes a region that overlaps with the conductor with the second insulator interposed therebetween. The maximum height of a roughness curve (Rz) of the top surface of the conductor is 6.0 nm or smaller. The region includes crystals, and c-axes of the crystals are aligned in the normal direction of the top surface of the conductor. 1. A semiconductor device comprising:a conductor;a first insulator in contact with a side surface of the conductor;a second insulator in contact with a top surface of the conductor and a top surface of the first insulator; andan oxide over the second insulator,wherein the oxide includes a region that overlaps with the conductor with the second insulator interposed therebetween,wherein the maximum height of a roughness curve (Rz) of the top surface of the conductor is 6.0 nm or smaller,wherein the region includes crystals, andwherein c-axes of the crystals are aligned in the normal direction of the top surface of the conductor.2. The semiconductor device according to claim 1 , wherein the mean length of roughness curve components (RSm) of the top surface of the conductor is less than 60 nm.3. A semiconductor device comprising:a conductor;a first insulator in contact with a side surface of the conductor;a second insulator in contact with a top surface of the conductor and a top surface of the first insulator; andan oxide over the second insulator,wherein the oxide includes a region that overlaps with the conductor with the second insulator interposed therebetween,wherein the mean length of roughness curve components (RSm) of the top surface of the conductor is 60 nm or larger,wherein the region ...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided. The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening. 1. A semiconductor device comprising:a first insulator;an oxide over the first insulator;a second insulator over the oxide;a first conductor over the second insulator;a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; anda fourth insulator over the third insulator,wherein the third insulator comprises an opening exposing the first insulator, andwherein the fourth insulator is in contact with the first insulator through the opening.2. A semiconductor device comprising:a first insulator;a first oxide comprising an opening over the first insulator;a second oxide over the first oxide;a second insulator over the second oxide;a first conductor over the second insulator;a third insulator in contact with a top surface of the first insulator, a side surface of the first oxide, a side surface of the second oxide, a top surface of the second oxide, a side surface of the second insulator, and a side surface of the first conductor; anda fourth insulator over the third insulator,wherein the third insulator comprises an opening exposing the first insulator, andwherein the fourth insulator is in contact with the first insulator through the ...

Current measurement method

A minute current measurement method is provided. In the current measurement method, a first potential is applied to a first terminal of a transistor under test, a second potential is applied to a first terminal of a first transistor, the first transistor is turned on to accumulate a predetermined charge in a node electrically connecting a second terminal of the transistor under test with a second terminal of the first transistor, a third potential of an output terminal of a read circuit electrically connected to the node is measured, the first transistor is turned off, a fourth potential of the output terminal of the read circuit electrically connected to the node is measured, the amount of the charge held by the node is estimated from the amount of change in the potential of the output terminal of the read circuit (e.g., a difference between the third potential and the fourth potential), and a value of current flowing between the first terminal of the transistor under test and the second terminal of the first transistor is calculated from the amount of the charge held by the node.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A manufacturing method of a semiconductor device in which the threshold is adjusted to an appropriate value is provided. The semiconductor device includes a semiconductor, a source or drain electrode electrically connected to the semiconductor, a first gate electrode and a second gate electrode between which the semiconductor is sandwiched, an electron trap layer between the first gate electrode and the semiconductor, and a gate insulating layer between the second gate electrode and the semiconductor. By keeping a potential of the first gate electrode higher than a potential of the source or drain electrode for 1 second or more while heating, electrons are trapped in the electron trap layer. Consequently, threshold is increased and Icut is reduced. 1. A semiconductor device comprising:a first gate electrode;an electron trap layer over the first gate electrode;a first oxide semiconductor over the electron trap layer;a second oxide semiconductor over and in contact with the first oxide semiconductor;a source electrode and a drain electrode electrically connected to the second oxide semiconductor;a third oxide semiconductor over and in contact with the second oxide semiconductor;a gate insulating layer over the third oxide semiconductor; anda second gate electrode over the gate insulating layer,wherein the third oxide semiconductor in a channel width direction is in contact with a side surface of the electron trap layer, a side surface of the first oxide semiconductor, and a side surface of the second oxide semiconductor,wherein the second gate electrode in the channel width direction faces a top surface of the second oxide semiconductor and the side surface of the second oxide semiconductor, andwherein a portion of a bottom surface of the second gate electrode is lower than an interface between the first oxide semiconductor and the second oxide semiconductor.2. A semiconductor device comprising:a first gate electrode;a first insulating layer comprising hafnium oxide ...

Single-layer and multilayer graphene, method of manufacturing the same, object including the same, and electric device including the same

Graphene is formed with a practically uniform thickness on an uneven object. The object is immersed in a graphene oxide solution, and then taken out of the solution and dried; alternatively, the object and an electrode are immersed therein and voltage is applied between the electrode and the object used as an anode. Graphene oxide is negatively charged, and thus is drawn to and deposited on a surface of the object, with a practically uniform thickness. After that, the object is heated in vacuum or a reducing atmosphere, so that the graphene oxide is reduced to be graphene. In this manner, a graphene layer with a practically uniform thickness can be formed even on a surface of the uneven object.

BICYCLE COMPONENT FIXING STRUCTURE

A bicycle component fixing structure has a fixing nut that is configured to be coupled to a handlebar clamp and a fixing bolt. The fixing nut includes a threaded bore with an entrance opening and an exit opening. The threaded bore has a first axial length between the entrance and exit openings. The fixing nut defines a bolt shaft receiving space that is disposed adjacent the bolt exit opening. The fixing bolt includes a head and a shaft. The shaft has a non-threaded portion disposed between first and second threaded portions. The first threaded portion is disposed closer to the head of the fixing bolt than the second threaded portion. The first and second threaded portions threadedly engage the threaded bore of the fixing nut. The non-threaded portion has a second axial length that is greater than the first axial length of the threaded bore of the fixing nut. 1. A bicycle component fixing structure comprising:a fixing nut configured to be coupled to a handlebar clamp, the fixing nut including a threaded bore having a bolt entrance opening and a bolt exit opening, the threaded bore having a first axial length between the bolt entrance opening and the bolt exit opening, the fixing nut defining a bolt shaft receiving space disposed adjacent the bolt exit opening; anda fixing bolt including a head and a shaft extending from the head, the shaft having a first threaded portion, a second threaded portion and a non-threaded portion disposed between the first and second threaded portions, the first threaded portion being disposed closer to the head of the fixing bolt than the second threaded portion, the first and second threaded portions being dimensioned to threadedly engage the threaded bore of the fixing nut, the non-threaded portion having a second axial length that is greater than the first axial length of the threaded bore of the fixing nut.2. The bicycle component fixing structure according to claim 1 , whereinthe bolt shaft receiving space includes a non-threaded ...

Semiconductor device and method for manufacturing semiconductor device

The semiconductor device includes a first insulator; a second insulator over the first insulator; an oxide over the second insulator; a first conductor and a second conductor over the oxide; a third insulator over the oxide; a third conductor positioned over the third insulator and overlapping with the oxide; a fourth insulator in contact with the second insulator, a side surface of the oxide, a side surface of the first conductor, a top surface of the first conductor, a side surface of the second conductor, a top surface of the second conductor, and a side surface of the third insulator; and a fifth insulator in contact with a top surface of the third insulator and a top surface of the third conductor, and a top surface of the fourth insulator is in contact with the fifth insulator.

PROTEINS FOR THE TREATMENT OF EPITHELIAL BARRIER FUNCTION DISORDERS

The disclosure relates to therapeutic proteins and pharmaceutical compositions comprising said proteins, which have utility in treating various human diseases. In particular aspects, the disclosed therapeutic proteins are useful for treating human gastrointestinal inflammatory diseases and gastrointestinal conditions associated with decreased epithelial cell barrier function or integrity. Further, the disclosed therapeutic proteins are useful for treating human inflammatory bowel disease, including inter alia, Crohn's disease and ulcerative colitis. 1. A synthetic therapeutic protein , comprising: an amino acid sequence having at least about 90% sequence identity to SEQ ID NO: 19.2. The protein of claim 1 , comprising: an amino acid sequence having at least about 95% sequence identity to SEQ ID NO: 19.3. The protein of claim 1 , comprising: an amino acid sequence having at least about 97% sequence identity to SEQ ID NO: 19.4. The protein of claim 1 , comprising: an amino acid sequence having at least about 98% sequence identity to SEQ ID NO: 19.5. The protein of claim 1 , comprising: an amino acid sequence having at least about 99% sequence identity to SEQ ID NO: 19.6. The protein of claim 1 , comprising: the amino acid sequence of SEQ ID NO: 19.7. The protein of claim 1 , wherein the amino acid at position 147 is valine.8. The protein of claim 1 , wherein the amino acid at position 151 is serine.9. The protein of claim 1 , wherein the amino acid at position 147 is valine claim 1 , and the amino acid at position 151 is serine.10. The protein of claim 1 , wherein the amino acid at position 84 is aspartic acid.11. The protein of claim 1 , wherein the amino acid at position 84 is aspartic acid claim 1 , and the amino acid at position 147 is valine claim 1 , and the amino acid at position 151 is serine.12. The protein of claim 1 , wherein the amino acid at position 83 is serine.13. The protein of claim 1 , wherein the amino acid at position 83 is serine claim 1 , and ...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A manufacturing method of a semiconductor device in which the threshold voltage is adjusted is provided. The semiconductor device includes a first semiconductor, an electrode electrically connected to the first semiconductor, a gate electrode, and an electron trap layer between the gate electrode and the first semiconductor. By performing heat treatment at higher than or equal to 125 ° C. and lower than or equal to 450 ° C. and, at the same time, keeping a potential of the gate electrode higher than a potential of the electrode for 1 second or more, the threshold voltage is increased. 1. A manufacturing method of a semiconductor device comprising:forming a first semiconductor;forming an electron trap layer over the first semiconductor;forming a gate electrode over the electron trap layer;forming an electrode electrically connected to the first semiconductor; andkeeping a potential of the gate electrode higher than a potential of the electrode for 1 second or longer at a temperature higher than or equal to 125° C. and lower than or equal to 450° C., thereby increasing a threshold voltage of the semiconductor device.1. (canceled)2. A processing method of a semiconductor device: a first semiconductor;', 'a first electron trap layer over the first semiconductor;', 'a second electron trap layer over the first electron trap layer, wherein the second electron trap layer has a higher density of electron trap states than the first electron trap layer;', 'a gate electrode over the second electron trap layer; and', 'an electrode electrically connected to the first semiconductor, the processing method comprising a step of:', 'keeping a potential of the gate electrode higher than a potential of the electrode for 1 second or longer at a temperature higher than or equal to 125° C. and lower than or equal to 450° C., thereby increasing a threshold voltage of the semiconductor device., 'the semiconductor device comprising;'}3. The processing method of the semiconductor device ...

SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE INCLUDING THE SEMICONDUCTOR DEVICE

A semiconductor device includes a first oxide semiconductor film, a second oxide semiconductor film over the first oxide semiconductor film, a source electrode in contact with the second oxide semiconductor film, a drain electrode in contact with the second oxide semiconductor film, a metal oxide film over the second oxide semiconductor film, the source electrode, and the drain electrode, a gate insulating film over the metal oxide film, and a gate electrode over the gate insulating film. The metal oxide film contains M (M represents Ti, Ga, Y, Zr, La, Ce, Nd, or Hf) and Zn. The metal oxide film includes a portion where x/(x+y) is greater than 0.67 and less than or equal to 0.99 when a target has an atomic ratio of M:Zn=x:y. 1. (canceled)2. A semiconductor device comprising:a first oxide semiconductor film;a second oxide semiconductor film over the first oxide semiconductor film;a source electrode over the second oxide semiconductor film;a drain electrode over the second oxide semiconductor film;a metal oxide film over the second oxide semiconductor film, the source electrode, and the drain electrode; anda gate electrode overlapping with the second oxide semiconductor film with a gate insulating film interposed therebetween,wherein the metal oxide film comprises an element M (M represents Ti, Ga, Y, Zr, La, Ce, Nd, or Hf) and Zn, andwherein the metal oxide film comprises a portion where x/(x+y) is greater than 0.67 and less than or equal to 0.99 when an atomic ratio of the element M to Zn in a target is represented by M:Zn=x:y.3. The semiconductor device according to claim 2 ,wherein the element M is Ga.4. The semiconductor device according to claim 2 ,wherein the second oxide semiconductor film comprises a plurality of crystal parts having c-axis alignment, and c-axes of the plurality of crystal parts are aligned in a direction parallel to a normal vector to an upper surface of the second oxide semiconductor film.5. The semiconductor device according to claim 2 , ...

SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE INCLUDING THE SEMICONDUCTOR DEVICE

A semiconductor device includes a first oxide semiconductor film, a second oxide semiconductor film over the first oxide semiconductor film, a source electrode in contact with the second oxide semiconductor film, a drain electrode in contact with the second oxide semiconductor film, a metal oxide film over the second oxide semiconductor film, the source electrode, and the drain electrode, a gate insulating film over the metal oxide film, and a gate electrode over the gate insulating film. The metal oxide film contains M (M represents Ti, Ga, Y, Zr, La, Ce, Nd, or Hf) and Zn. The metal oxide film includes a portion where x/(x+y) is greater than 0.67 and less than or equal to 0.99 when a target has an atomic ratio of M:Zn=x:y. 1. A semiconductor device comprising:a first oxide semiconductor film;a second oxide semiconductor film over the first oxide semiconductor film;a source electrode comprising a region in contact with the second oxide semiconductor film;a drain electrode comprising a region in contact with the second oxide semiconductor film;a metal oxide film over the second oxide semiconductor film, the source electrode, and the drain electrode;a gate insulating film over the metal oxide film; anda gate electrode over the gate insulating film,wherein the metal oxide film comprises an element M (M represents Ti, Ga, Y, Zr, La, Ce, Nd, or Hf) and Zn, andwherein the metal oxide film comprises a portion where x/(x+y) is greater than 0.67 and less than or equal to 0.99 when an atomic ratio of the element M to Zn in a target is represented by M:Zn=x:y.2. The semiconductor device according to claim 1 ,wherein the element M is Ga.3. The semiconductor device according to claim 1 ,wherein the second oxide semiconductor film comprises a plurality of crystal parts having c-axis alignment, and c-axes of the plurality of crystal parts are aligned in a direction parallel to a normal vector to an upper surface of the second oxide semiconductor film.4. The semiconductor device ...

Semiconductor device

A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. Oxygen is introduced into a surface of an insulating film, and then, an oxide semiconductor, a layer which is capable of blocking oxygen, a gate insulating film, and other films which composes a transistor are formed. For at least one of the first gate insulating film and the insulating film, three signals in Electron Spin Resonance Measurement are each observed in a certain range of g-factor. Reducing the sum of the spin densities of the signals will improve reliability of the semiconductor device.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor device with a high on-state current is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a first conductor and a second conductor over the second oxide, a third oxide over the second oxide, a second insulator over the third oxide, a third conductor that is located over the second insulator and overlaps with the third oxide, a third insulator that is located over the first insulator and in contact with a side surface of the first oxide, a side surface of the second oxide, a side surface of the first conductor, a top surface of the first conductor, a side surface of the second conductor, and a top surface of the second conductor, and a fourth insulator over the third conductor, the second insulator, the third oxide, and the third insulator. The fourth insulator is in contact with a top surface of each of the third conductor, the second insulator, and the third oxide. 1. A semiconductor device comprising:a first insulator;a first oxide over the first insulator;a second oxide over the first oxide;a first conductor and a second conductor over the second oxide;a third oxide over the second oxide;a second insulator over the third oxide;a third conductor that is located over the second insulator and overlaps with the third oxide;a third insulator that is located over the first insulator and in contact with a side surface of the first oxide, a side surface of the second oxide, a side surface of the first conductor, a top surface of the first conductor, a side surface of the second conductor, and a top surface of the second conductor; anda fourth insulator over the third conductor, the second insulator, the third oxide, and the third insulator,wherein the fourth insulator is in contact with a top surface of each of the third conductor, the second insulator, and the third oxide.2. The semiconductor device according to claim 1 ,wherein the third insulator and the fourth ...

Antibody fragments against the insulin receptor and uses thereof to treat hypoglycemia

The present disclosure relates, in general, to methods of treating or preventing hypoglycemia using a negative modulator antibody fragment that binds to the insulin receptor and modulates the action of insulin at the insulin receptor.

Parathyroid hormone receptor 1 (pth1r) antibodies and uses thereof

The present disclosure relates, in general, human antibodies against human parathyroid hormone receptor 1 (PTH1R) and methods of use of such antibodies in the treatment of cancer, Humoral Hypercalcemia of Malignancy (HHM), or Primary Hyperparathyroidism (PHPT) and Secondary Hyperparathyroidism (SHPT) and cachexia.

Fully human anti-vegf antibodies and methods of using

Disclosed herein are fully human antibodies and antigen-binding fragments thereof that specifically bind human VEGF and inhibit VEGF binding to VEGF-R1 and VEGF-R2, and therefore inhibit VEGF signaling. The antibodies and antigen-binding fragments disclosed herein may be used, for example, to treat angiogenesis and conditions associated with angiogenesis both in vivo and in vitro.

Methods and materials for enhancing functional protein expression in bacteria

Novel materials and methods useful for expressing heterologous proteins in prokaryotic cells are provided, including prokaryotic cells expressing FkpA and/or Skp.

Antibodies that bind interleukin-2 and uses thereof

【課題】ヒトインターロイキン２（ＩＬ－２）に対するヒト抗体、ならびにＩＬ－２活性の調節のためのかかる抗体の使用方法、およびがん・自己免疫疾患・感染症などの状態の治療における使用方法を提供する。【解決手段】１×１０－１０Ｍ以下の親和性ＫＤでヒトインターロイキン２（ＩＬ－２）に結合し、ＩＬ－２受容体アルファ（ＩＬ－２ Ｒα）サブユニットとのＩＬ－２の結合を阻害する、ヒト抗体又はヒト化抗体であって、ＩＬ－２ Ｒαβγを介したＩＬ－２シグナル伝達及びＩＬ－２ Ｒβγを介したＩＬ－２シグナル伝達を阻害し、ＩＬ－２ Ｒαβγを介したＩＬ－２シグナル伝達をＩＬ－２ Ｒβγを介するよりも大きい程度で阻害する、ヒト抗体又はヒト化抗体を提供する。【選択図】なし

Human antibodies that have mn binding and cell adhesion-neutralizing activity

The invention is composed of monoclonal human MN antibodies or MN antibody fragments that target the GEEDLP repeat within the proteoglycan domain. The proteoglycan domain of the MN cell surface protein contains four of these identical GEEDLP repeats. Binding to the desired epitope is verified by competition ELISA, where ELISA signal can be attenuated by co-incubation with a peptide containing this repeat (PGEEDLPGEEDLP). This inhibition of binding can also be verified using Biacore assays, where binding of desired antibodies to immobilized MN or proteoglycan peptides can be inhibited by the peptide repeat. In addition to binding to the peptide repeat, human anti-MN antibodies can inhibit the cell adhesion of CGL-1 cells to MN coated plastic plates. Human anti-MN antibodies have been used to diagnose and quantify MN expression in cancer cells and tumors using FACS and immunohistochemical methods. An example is also provided where a human anti-MN IgG1 mediates tumor cell lysis though antibody-dependent cell-mediated cytotoxicity. Therefore, these antibodies will be useful for the treatment of cancers in which MN is upregulated or can be useful for the diagnosis of cancers in which MN is upregulated.

Antibodies specific for tgf-beta

The present disclosure relates, in general, to materials and methods for antibodies specific for transforming growth factor beta (TGFPá), including TGFá1, TGFá2 and TGFá3, and uses of these antibodies in the treatment of subjects having cancer, an eye disease, condition or disorder, fibrosis, including ophthalmic fibrosis or fibrosis of the eye, and other conditions or disorders related to TGFá expression.

Antibody fragments against the insulin receptor and uses thereof to treat hypoglycemia

The present disclosure relates, in general, to methods of treating or preventing hypoglycemia using a negative modulator antibody fragment that binds to the insulin receptor and modulates the action of insulin at the insulin receptor.

Method for manufacturing SOI substrate and semiconductor device

An amorphous semiconductor layer is formed over a first single crystal semiconductor layer provided over a glass substrate or a plastic substrate with an insulating layer therebetween. The amorphous semiconductor layer is formed by a CVD method at a deposition temperature of higher than or equal to 100° C. and lower than or equal to 275° C. with use of a silane-based gas not diluted. Heat treatment is performed so that the amorphous semiconductor layer solid-phase epitaxially grows. In such a manner, an SOI substrate including a thick single crystal semiconductor layer is manufactured.

Antibodies specific for tgf-beta

Antibodies specific for TGF-beta and methods for treating thereof

The present disclosure relates, in general, to materials and methods for antibodies specific for transforming growth factor beta (TGFβ), including TGFβ1, TGFβ2 and TGFβ3, and uses of these antibodies in the treatment of subjects having cancer, an eye disease, condition or disorder, fibrosis, including ophthalmic fibrosis or fibrosis of the eye, and other conditions or disorders related to TGFβ expression.

Human antibodies that have mn binding and cell adhesion-neutralizing activity

The invention is composed of monoclonal human MN antibodies or MN antibody fragments that target the GEEDLP repeat within the proteoglycan domain. The proteoglycan domain of the MN cell surface protein contains four of these identical GEEDLP repeats. Binding to the desired epitope is verified by competition ELISA, where ELISA signal can be attenuated by co-incubation with a peptide containing this repeat (PGEEDLPGEEDLP). This inhibition of binding can also be verified using Biacore assays, where binding of desired antibodies to immobilized MN or proteoglycan peptides can be inhibited by the peptide repeat. In addition to binding to the peptide repeat, human anti-MN antibodies can inhibit the cell adhesion of CGL-1 cells to MN coated plastic plates. Human anti-MN antibodies have been used to diagnose and quantify MN expression in cancer cells and tumors using FACS and immunohistochemical methods. An example is also provided where a human anti-MN IgG1 mediates tumor cell lysis though antibody-dependent cell-mediated cytotoxicity. Therefore, these antibodies will be useful for the treatment of cancers in which MN is upregulated or can be useful for the diagnosis of cancers in which MN is upregulated.

Peptides for immunotherapy

The disclosure provides peptides and pharmaceutical compositions thereof. Such peptides can be useful, for example, in treating various human diseases such as immunological diseases. In some embodiments, the peptides are useful as immunotherapeutics for modulating regulatory and effector molecules of the mammalian immune system.

Methods and materials for enhancing functional protein expression in bacteria

Novel materials and methods useful for expressing heterologous proteins in prokaryotic cells are provided, including prokaryotic cells expressing FkpA and/or Skp.

Antibodies specific for tgf-beta.

La presente invención se refiere a materiales y métodos para anticuerpos específicos para la transformación de factor de crecimiento beta TGFß1, TGFß2 y TGFß3, y usos de estos anticuerpos en el tratamiento de sujetos que tienen cáncer, un enfermedad, condición o trastorno ocular, fibrosis, incluyendo fibrosis oftálmica o fibrosis del ojo, y otras condiciones o enfermedades relacionadas con la expresión de TGFß.

Antibody ultrahumanization by predicted mature cdr blasting and cohort library generation and screening

Methods and compositions directed to improved universal antibody libraries that rationally exploit human diversity information contained within reference antibody libraries, such as universal antibody libraries, are disclosed. The disclosed processes involve use of a query CDR sequence to guide incorporation of human antibody diversity present within the reference library into cohort libraries of the invention. Methods for making and screening such cohort libraries for isolating therapeutics suitable for treating disease are also disclosed.

Antibodies Specific For TGF-Beta

The present disclosure relates, in general, to materials and methods for antibodies specific for transforming growth factor beta (TGFPp), including TGFp1, TGFp2 and TGFp3, and uses of these antibodies in the treatment of subjects having cancer, an eye disease, condition or 5 disorder, fibrosis, including ophthalmic fibrosis or fibrosis of the eye, and other conditions or disorders related to TGFp expression.

Antibodies Specific For TGF-Beta

The present disclosure relates, in general, to materials and methods for antibodies specific for transforming growth factor beta (TGFPp), including TGFp1, TGFp2 and TGFp3, and uses of these antibodies in the treatment of subjects having cancer, an eye disease, condition or 5 disorder, fibrosis, including ophthalmic fibrosis or fibrosis of the eye, and other conditions or disorders related to TGFp expression.

Antibodies Specific For TGF-Beta

The present disclosure relates, in general, to materials and methods for antibodies specific for transforming growth factor beta (TGFPp), including TGFp1, TGFp2 and TGFp3, and uses of these antibodies in the treatment of subjects having cancer, an eye disease, condition or 5 disorder, fibrosis, including ophthalmic fibrosis or fibrosis of the eye, and other conditions or disorders related to TGFp expression.

Method of Producing Human IgG Antibodies with Enhanced Effector Functions

A method for generating human IgG 1 antibodies with enhanced Fc effector function is disclosed. In practicing the method, an IgG 1 Fc look-through mutagenesis (LTM) coding library directed at four receptor-contact regions of the Fc C H 2 portion of in human IgG 1 Fc is expressed in a system in which the mutated Fc fragments are displayed on the surfaces of the expression cells. The fragments are then screened for altered binding affinity to a selected Fc receptor or other Fc-binding protein. The selected mutations may be used, in turn, to guide the selection of multiple substitutions in the construction of a walk-through mutation (WTM) library, for generating additional Fc fragment mutations with desired binding properties. The antibodies so produced have a variety of therapeutic and diagnostic applications.

Antibody inhibiting stem cell factor activity and use for treatment of asthma

Membrane type serine protease 1 (mt-sp1) and uses thereof

This invention provides a novel membrane-type serine protease (designated MT-SP1) elevated expression of which is associated with cancer. In one embodiment, this invention provides a method obtaining a prognosis or of detecting or staging a cancer in an organism. The method involves providing a biological sample from the organism and detecting the level of a membrane-type serine protease 1 (MT-SP1) in the sample, where an elevated level of the membrane-type serine protease, as compared to the level of the protease in a biological sample from a normal healthy organism indicates the presence or stadge of the cancer.

Proteins for the treatment of epithelial barrier function disorders

The disclosure relates to therapeutic proteins and pharmaceutical compositions comprising said proteins, which have utility in treating various human diseases. In particular aspects, the disclosed therapeutic proteins are useful for treating human gastrointestinal inflammatory diseases and gastrointestinal conditions associated with decreased epithelial cell barrier function or integrity. Further, the disclosed therapeutic proteins are useful for treating human inflammatory bowel disease, including

Cobalt schiff base compounds

The present invention is directed to cobalt compounds that can exchange or bind functional moieties such as histidine on a protein's surface resulting in the inactivation of a biological activity of the protein due to the complexing of the functional moiety to the cobalt compound.

Peptides for immunotherapy

The disclosure provides peptides, pharmaceutical compositions, and methods of producing thereof. Such peptides can be useful, for example, in treating various human diseases such as immunological diseases or cancers. In some embodiments, the peptides are useful as immunotherapeutics for modulating regulatory and effector molecules of the mammalian immune system.

Cobalt schiff base compounds

The invention relates to cobalt compounds in which divalent or trivalent cobalt is complexed with water soluble tetradentate Schiff's bases. The tetradentate Schiff's bases preferably contain two nitrogen atoms and two oxygen atoms as coordinating atoms. The compounds can contain polypeptide or nucleic acid targeting moities and can be used to inhibit enzymes such as thrombin and to inhibit zinc finger proteins.

Antibodies specific for tgf-beta

Methods and materials for targeted mutagenesis

The present disclosure relates to methods and materials for mutagenesis, including for the generation of novel or improved proteins and libraries or arrays of mutant proteins or nucleic acids encoding such mutant proteins.

Antibodies Specific For TGF-Beta

The present disclosure relates, in general, to materials and methods for antibodies specific for transforming growth factor beta (TGFPp), including TGFp1, TGFp2 and TGFp3, and uses of these antibodies in the treatment of subjects having cancer, an eye disease, condition or 5 disorder, fibrosis, including ophthalmic fibrosis or fibrosis of the eye, and other conditions or disorders related to TGFp expression.

Antibody ultrahumanization by predicted mature cdr blasting and cohort library generation and screening

Methods and compositions directed to improved universal antibody libraries that rationally exploit human diversity information contained within reference antibody libraries, such as universal antibody libraries, are disclosed. The disclosed processes involve use of a query CDR sequence to guide incorporation of human antibody diversity present within the reference library into cohort libraries of the invention. Methods for making and screening such cohort libraries for isolating therapeutics suitable for treating disease are also disclosed.