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02-07-1991 дата публикации

Method of making a reverse self-aligned BIMOS transistor integrated circuit

Номер: US0005028557A1
Автор: Tsai; Nun-Sian, Tsai; Cliff Y.
Принадлежит: Taiwan Semiconductor Manufacturing Co., Ltd.

A method of forming self-aligned transistors wherein both bipolar and field effect transistors are formed in the same Integrated Circuit simultaneously is described. A heavily doped conductive layer of one conductivity type is formed upon a monocrystalline semiconductor substrate of the opposite conductivity type to that of the one type. The conductive layer may be typically polycrystalline silicon. An insulator layer is formed upon the surface of the conductive layer. Openings with substantially vertical sidewalls are formed through the conductive layer to the semiconductor substrate in the locations of the first element, the emitter for the bipolar and gate for the MOSFET, of the transistors to be formed. The structure is heated to form the heavily doped portions of the second element of said transistors of the one conductivity type by outdiffusing from the conductive layer. The second element is the base where the bipolar transistor is being formed and the source/drain where the field ...

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Номер записи: 1
29-12-1992 дата публикации

Reverse self-aligned BiMOS transistor integrated circuit

Номер: US0005175606A1
Автор: Tsai; Nun-Sian, Tsai; Cliff Y.
Принадлежит: Taiwan Semiconductor Manufacturing Company

A method of forming self-aligned transistors wherein both bipolar and field effect transistors are formed in the same Integrated Circuit simultaneously is described. A heavily doped conductive layer of one conductivity type is formed upon a monocrystalline semiconductor substrate of the opposite conductivity type to that of the one type. The conductive layer may be typically polycrystalline silicon. An insulator layer is formed upon the surface of the conductive layer. Openings with substantially vertical sidewalls are formed through the conductive layer to the semiconductor substrate in the locations of the first element, the emitter for the bipolar and gate for the MOSFET, of the transistors to be formed. The structure is heated to form the heavily doped portions of the second element of said transistors of the one conductivity type by outdiffusing from the conductive layer. The second element is the base where the bipolar transistor is being formed and the source/drain where the field ...

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Номер записи: 2