Semiconductor storage device

The semiconductor storage device of this invention includes memory cells each having two transistors and one storage capacitor. Each memory cell is connected with a first word line and a first bit line for a first port and a second word line and a second bit line for a second port. The first and second bit lines are alternately disposed in an open bit line configuration. In the operation of the semiconductor storage device, in a period when a first precharge signal for precharging each first bit line or a first sense amplifier activating signal for activating a first sense amplifier is kept in an active state, a second precharge signal for precharging each second bit line and a second sense amplifier activating signal for activating a second sense amplifier are both placed in an inactive state.

Visiophone

Un visiophone comporte un boitier 11 dans lequel une camera video 14 est logee de telle sorte qu'une ouverture de celle-ci soit dirigee vers l'avant. La camera est fixee a un support rotatif 52 que l'on fait tourner en actionnant un bouton 54 situe a l'exterieur du boitier; en reponse a cette rotation, un angle d'inclinaison ou d'elevation de l'ouverture de la camera est modifie. La camera comporte un objectif et un capteur d'images a l'etat solide qui convertit une image lumineuse en provenance de l'objectif en un signal electrique (signal video), montes sur une plaque de circuit. Le capteur d'images a l'etat solide est sensible au moins a une lumiere infrarouge. Sur la meme plaque ou sur une autre plaque de circuit est montee une diode LED infrarouge. La diode LED est allumee aux moments necessaires pour irradier une personne ou un sujet se trouvant devant l'ouverture de la camera.

Semiconductor device and method of manufacturing the same

According to one embodiment, a semiconductor device includes a semiconductor element having a substrate with at least two bending portions formed on a first side surface thereof. The two bending portions are displaced from each other in a first direction that is perpendicular to the first side surface of the substrate and parallel to a front surface of the substrate and in a second direction parallel to the front surface of the substrate and perpendicular to a top surface of the substrate. A rearmost portion of the first side surface is substantially perpendicular to the front surface.

Semiconductor device and method for fabricating the same, memory core chip and memory peripheral circuit chip

The semiconductor device of the invention includes a plurality of circuit blocks including a first circuit block and a second circuit block, a block parameter of the first circuit block being different from a block parameter of the second circuit block. In the semiconductor device, the first circuit block is formed on a first semiconductor chip, and the second circuit block is formed on a second semiconductor chip and is electrically connected with the first circuit block.

User authentication method and system, information terminal device and service providing server, subject identification method and system, correspondence confirmation method and system, object confirmation method and system, and program products for them

An object of the present invention is to provide a user authentication method and system, an information terminal device and a service providing server, a subject identification method and system, a correspondence confirmation method and system, an object confirmation method and system, which are capable of assuring authentication and/or confirmation of a person, an animal and a plant, or an object and improving precision thereof, and program products for them. In order to perform user authentication when a user of an information terminal device 30 such as a cellular phone or the like receives a service from a service providing server 20 via a network, iris authentication is performed, and a password is automatically updated every time a service is provided to generate a new password to be used when a next service is provided, and the new password is stored in both the information terminal device 30 and the service providing server 20.

Dicing method and laser processing apparatus

According to one embodiment, a dicing method is provided. The dicing method includes detecting a first distance between a first portion of a substrate and a first substrate information detection unit. The method also includes detecting a second distance between a second portion of the substrate a second substrate information detection unit, the second portion different from the first portion. Distance information is calculated between the substrate and a processing lens, which is located farther from the second substrate information detection unit than from the first substrate information detection unit, based on the detected first distance and the detected second distance, and he substrate is irradiated with laser light from the processing lens based on the distance information.

Liquid crystal display device and apparatus with display function

Two liquid crystal panels are laid one over the other in a state that each of the liquid crystal panels is oriented in a forward direction. At least one spacer is detachably provided between the two liquid crystal panels. The liquid crystal panels are positioned relative to each other by a plurality of through-holes arrayed in a thickness direction of the spacer by an interval corresponding to the thickness of the spacer, and a projection engageable in one of the through-holes.

Dicing method and laser processing apparatus

According to one embodiment, a dicing method is provided. The dicing method includes detecting a first distance between a first portion of a substrate and a first substrate information detection unit. The method also includes detecting a second distance between a second portion of the substrate a second substrate information detection unit, the second portion different from the first portion. Distance information is calculated between the substrate and a processing lens, which is located farther from the second substrate information detection unit than from the first substrate information detection unit, based on the detected first distance and the detected second distance, and the substrate is irradiated with laser light from the processing lens based on the distance information.

Disintegrator with rotative disk cutters

An object of the present invention is to diminish the sizes of most disintegrated material effectively, said sizes being determined by the box seats made on the surface of the under roll ( 7 ). In a disintegrator ( 1 ) having a case ( 4 ) with an upper hopper 2 and under exit ( 3 ), a pair of upper rolls ( 5, 6 ), an under roll ( 7 ) located below the upper rolls, and knives ( 8,9 ) projecting from inner surface of the case ( 4 ) toward the under roll ( 7 ) comprising a number of annular grooves ( 25 ) formed on the under roll ( 7 ), each groove ( 25 ) being coupled by a rotative disk cutter ( 27 ) at under side of the knives ( 8, 9 ). The under roll ( 7 ) is provided with polygonal installation seats ( 13 ), between adjoining installation seats ( 13 ) each attached by a number of cutting edge blocks ( 14 ) on a same circumference, said annular grooves ( 25 ) are formed between the adjoining installation seats ( 13 ).

Rear bumper for an automobile

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

According to an embodiment, a method of manufacturing a semiconductor device includes forming a first modified zone in a wafer by irradiating the wafer with a laser having transmissivity with respect to the wafer along a part of a dicing line on the wafer, and forming a second modified zone in the wafer by irradiating the wafer with the laser along the dicing line on the wafer. The first modified zone is partially formed between a surface of the wafer and the second modified zone, a semiconductor interconnect layer being formed on the surface of the wafer. 1. A method of manufacturing a semiconductor device comprising:forming a first modified zone in a wafer by irradiating the wafer with a laser having transmissivity with respect to the wafer along a part of a dicing line on the wafer; andforming a second modified zone in the wafer by irradiating the wafer with the laser along the dicing line on the wafer,the first modified zone being partially formed between a surface of the wafer and the second modified zone, a semiconductor interconnect layer being formed on the surface of the wafer.2. The method according to claim 1 , whereinthe first modified zone is formed by irradiating the wafer with the laser in a crossing manner along a part of each of a plurality of dicing lines on the wafer.3. The method according to claim 1 , further comprising:grinding the wafer from a back surface of the wafer positioned opposite to the surface of the wafer on which the semiconductor interconnect layer is formed, after the forming of the second modified zone.4. The method according to claim 3 , further comprising:attaching a tape to the back surface of the wafer and fixing a periphery of the wafer by a support, after the grinding of the wafer; andpushing up the tape and the wafer by a pressing body.5. The method according to claim 1 , whereinthe first modified zone is formed linearly along the surface of the wafer, anda width of the first modified zone is substantially same as a width ...

Low latency dynamic random access memory

In a semiconductor memory device with multiple memory cells, each including a charge storage device and two transfer devices for transferring its charge, these memory cells are accessible with no select signal provided externally. The memory device includes a clock generator for generating first and second mutually complementary clock signals. In response to the first and second clock signals, one of first word lines and one of second word lines are activated alternately. Specifically, the first clock signal makes a memory cell accessible through a first bit line by activating the first word line and first transistor, while the second clock signal makes the memory cell accessible through a second bit line by activating the second word line and second transistor.

Automobile and/or replica thereof

Method of manufacturing semiconductor device

According to an embodiment, a method of manufacturing a semiconductor device includes forming a first modified zone in a wafer by irradiating the wafer with a laser having transmissivity with respect to the wafer along a part of a dicing line on the wafer, and forming a second modified zone in the wafer by irradiating the wafer with the laser along the dicing line on the wafer. The first modified zone is partially formed between a surface of the wafer and the second modified zone, a semiconductor interconnect layer being formed on the surface of the wafer.

Semiconductor device

A semiconductor device according to an embodiment includes a semiconductor substrate comprising a first face, and a second face on an opposite side to the first face. A semiconductor element is provided on the first face of the semiconductor substrate. A polycrystalline or non-crystalline first material layer is provided at least on an outer edge of the first face of the semiconductor substrate. A second material layer is provided on the second face of the semiconductor substrate. The second material layer transmits laser light.

Automobile and/or replica thereof

Device and Method for Measuring Sleep State, Phase Coherence Calculation Device, Body Vibration Signal Measurement Device, Stress Level Measurement Device, Sleep State Measurement Device, and Cardiac Waveform Extraction Method

[Problem] To provide means by which sleep states can be measured, observed, or evaluated easily. [Solution] A sleep state measurement device that includes a phase coherence calculating means for calculating phase coherence on the basis of the instantaneous phase difference between the instantaneous phase of heart rate variability acquired from a sleeping animal and the instantaneous phase of the breathing pattern of the animal for the same time series as the heart rate variability. 1. A sleep state measuring device comprising a phase coherence calculation means for calculating phase coherence based on an instantaneous phase difference between instantaneous phase of fluctuations in heartbeat interval obtained during a subject's sleep and instantaneous phase in breathing pattern of the subject in the same time series as that for fluctuations in heartbeat interval.2. The sleep state measuring device as defined in claim 1 , further comprising an electrocardiogram measuring sensor and a breathing wave form extraction means for extracting signals related to breathing pattern from electrocardiogram of the subject measured with said electrocardiogram measuring sensor.3. The sleep state measuring device as defined in claim 1 , further comprising a vibration measuring sensor claim 1 , a heart rate interval calculation means for calculating fluctuations in heartbeat interval from signals measured with said vibration measuring sensor claim 1 , and a breathing wave form extraction means for extracting signals related to breathing pattern from signals measured with said vibration measuring sensor.4. The sleep state measuring device as defined in claim 2 , wherein sampling frequency of said electrocardiogram measuring sensor is not less than 100 Hz.5. The sleep state measuring device as defined in claim 2 , wherein said electrocardiogram measuring sensor is a wearable sensor attachable to the subject.6. The sleep state measuring device as defined in claim 5 , wherein said wearable ...

PROCESSING METHOD AND PROCESSING DEVICE OF SEMICONDUCTOR WAFER, AND SEMICONDUCTOR WAFER

According to one embodiment, a substrate processing method is disclosed. The above method includes: grinding an outer edge portion on a back surface of a semiconductor wafer with a semiconductor element formed on its front surface with a first grindstone or blade to thereby form an annular groove; grinding a projecting portion on an inner side of the groove with a second grindstone to thereby form a recessed portion integrally with the groove on the back surface of the semiconductor wafer; and grinding a bottom surface of the recessed portion including a ground surface made by the second grindstone with a third grindstone. 1. A processing method of a semiconductor wafer , comprising:grinding an outer edge portion on a back surface of a semiconductor wafer with a semiconductor element formed on its front surface with a first grindstone or blade to thereby form an annular groove;grinding a projecting portion on an inner side of the groove with a second grindstone to thereby form a recessed portion integrally with the groove on the back surface of the semiconductor wafer; andgrinding a bottom surface of the recessed portion including a ground surface made by the second grindstone with a third grindstone.2. The processing method of the semiconductor wafer according to claim 1 ,wherein a grain size of the second grindstone is coarser than that of the first grindstone or blade and the third grindstone.3. The processing method of the semiconductor wafer according to claim 1 ,wherein surface roughness (Ry) of a ground surface made by the first grindstone or blade is 0.1 μm to 2.5 μm, surface roughness (Ry) of the ground surface made by the second grindstone is equal to or more than 3.0 μm, and surface roughness (Ry) of a ground surface made by the third grindstone is equal to or less than 0.5 μm.4. The processing method of the semiconductor wafer according to claim 1 ,wherein surface roughness (Ry) of a ground surface made by the first grindstone or blade is 0.1 μm to 2.0 μ ...

Automobile and/or replica thereof

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

According to an embodiment, a method of manufacturing a semiconductor device includes forming a first modified zone in a wafer by irradiating the wafer with a laser having transmissivity with respect to the wafer along a part of a dicing line on the wafer, and forming a second modified zone in the wafer by irradiating the wafer with the laser along the dicing line on the wafer. The first modified zone is partially formed between a surface of the wafer and the second modified zone, a semiconductor interconnect layer being formed on the surface of the wafer. 115-. (canceled)16: A semiconductor device comprising:a semiconductor chip including corners when viewed from a front surface side of the semiconductor chip;modified zones formed at the corners on a side surface of the semiconductor chip; anda non-modified zone formed at a region of the side surface of the semiconductor chip, the region being located between the corners.17: The device according to claim 16 , whereinthe modified zones do not reach a back surface of the semiconductor chip.18: The device according to claim 16 , whereinthe modified zones reach a back surface of the semiconductor chip.19: The device according to claim 16 , whereinthe modified zones are formed at all of the corners of the semiconductor chip.20: The device according to claim 16 , whereinone of the modified zones is formed over two of the side surfaces in contact with each other.21: The device according to claim 16 , whereina shape of the semiconductor chip is a rectangle when viewed from the front surface side of the semiconductor chip.22: The device according to claim 16 , further comprising:a semiconductor interconnect layer formed on the front surface of the semiconductor chip.23: The device according to claim 16 , whereineach of the modified zones is an aggregation of the modified zones. This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2017-058147, filed on Mar. 23, 2017; the ...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

According to one embodiment, a semiconductor device includes a semiconductor element having a substrate with at least two bending portions formed on a first side surface thereof. The two bending portions are displaced from each other in a first direction that is perpendicular to the first side surface of the substrate and parallel to a front surface of the substrate and in a second direction parallel to the front surface of the substrate and perpendicular to a top surface of the substrate. A rearmost portion of the first side surface is substantially perpendicular to the front surface. 1. A semiconductor device , comprising:a semiconductor element including a substrate, the substrate having at least two bending portions formed on a first side surface thereof,wherein the two bending portions are displaced from each other in a first direction that is perpendicular to the first side surface of the substrate and parallel to a front surface of the substrate and in a second direction parallel to the front surface of the substrate and perpendicular to a top surface of the substrate, andwherein a rearmost portion of the first side surface is substantially perpendicular to the front surface.2. The semiconductor device according to claim 1 , wherein a residual stress of a first portion of the first side surface is −300 MPa or less claim 1 , or 300 MPa or more.3. The semiconductor device according to claim 2 , wherein a residual stress of a second portion of the first side surface is −100 MPa or more claim 2 , or 100 MPa or less.4. The semiconductor device according to claim 3 , wherein the first portion of the first side surface has a surface roughness of 1 micrometer or more.5. The semiconductor device according to claim 4 , wherein the surface roughness of the first portion is 10 micrometers or less.6. The semiconductor device according to claim 3 , wherein the second portion of the first side surface has a surface roughness of 0.01 micrometer or more.7. The semiconductor ...

Semiconductor device and manufacturing method thereof

A semiconductor device is provided with a semiconductor substrate. A semiconductor element is provided on a first face of the semiconductor substrate. An energy absorbing film is provided on the first face, to absorb optical energy to generate heat. A first insulation film is provided on the semiconductor element and on the energy absorbing film. A second insulation film is provided on a second face of the semiconductor substrate, the second face being opposite to the first face. A first modified layer is provided on a side face of the semiconductor substrate, the side face being located between an outer edge of the first face and an outer edge of the second face. A second modified layer is provided on the side face between the energy absorbing film and the first modified layer. A cleavage face is provided on the side face between the first and second modified layers.

Semiconductor manufacturing apparatus

A semiconductor manufacturing apparatus according to an embodiment irradiates a semiconductor substrate with laser to form modified regions along an intended cut line in the semiconductor substrate. A light source emits the laser. An optical system comprises an objective lens configured to focus the laser in the semiconductor substrate. A light modulator is capable of modulating an energy density distribution of the laser. A controller controls the light modulator to displace a peak position of the energy density distribution of the laser from an optical axis of the objective lens in a relative movement direction of the optical system with respect to the semiconductor substrate.

Hood for an automobile

Imaging apparatus with a multifocal lens formed of two pieces with different focal lengths

An imaging apparatus for imaging a first object at a normal distance and a second object nearer than the first object readily with high precision. The imaging apparatus has an imaging lens, an imaging device for capturing an image formed by the imaging lens, and a camera control unit. The imaging lens is a multifocal lens and contains a first lens portion having a first focal length for imaging the first object (e.g., the user of the imaging apparatus) at a normal distance and a second lens portion having a second focal length for imaging the second object (e.g., a bar code) nearer than the first object. The first and second lens portions are arranged on the same plane and formed in one piece. The information collected by imaging the second object is used for processing such as communications or displays.

Shredder

An object of the present invention is to diminish the sizes of most disintegrated material effectively, said sizes being determined by the box seats made on the surface of the under roll (7). In a disintegrator (1) having a case (4) with an upper hopper 2 and under exit (3), a pair of upper rolls (5, 6), an under roll (7) located below the upper rolls, and knives (8,9) projecting from inner surface of the case (4) toward the under roll (7) comprising a number of annular grooves (25) formed on the under roll (7), each groove (25) being coupled by a rotative disk cutter (27) at under side of the knives (8, 9). The under roll (7) is provided with polygonal installation seats (13), between adjoining installation seats (13) each attached by a number of cutting edge blocks (14) on a same circumference, said annular grooves (25) are formed between the adjoining installation seats (13).

Semiconductor device and method of manufacturing semiconductor device

A semiconductor device includes a semiconductor wafer chip, a semiconductor device layer, and a reflectance reducing layer. The semiconductor wafer chip includes a device region and a peripheral region around the device region. The peripheral region includes a plurality of voids aligned along a side surface of the semiconductor wafer chip at a predetermined depth from a first surface of the semiconductor wafer chip. The semiconductor device element layer is on the first surface in the device region. The reflectance reducing layer is on the first surface of the semiconductor wafer chip in the peripheral region, that reduces a reflection of laser light incident from a second surface of the semiconductor wafer chip.

Information terminal

An information terminal for imaging a first object at a normal distance and a second object nearer than the first object readily with high precision. The information terminal has an imaging lens and an imaging device for capturing an image formed by the imaging lens. The imaging lens is a multifocal lens and composed of a first lens portion having a first focal length for imaging the first object (e.g., the user of the information terminal) at a normal distance and a second lens portion having a second focal length for imaging the second object (e.g., a bar code) nearer than the first object. The first and second lens portions are arranged on the same plane and formed in one piece. The information collected by imaging the second object is used for processing such as communication and display ...

Device and method for measuring sleep state, phase coherence calculation device, body vibration signal measurement device, stress level measurement device, sleep state measurement device, and cardiac waveform extraction method

... [Problem] To provide means by which sleep states can be measured, observed, or evaluated easily. [Solution] A sleep state measurement device that includes a phase coherence calculating means for calculating phase coherence on the basis of the instantaneous phase difference between the instantaneous phase of heart rate variability acquired from a sleeping animal and the instantaneous phase of the breathing pattern of the animal for the same time series as the heart rate variability.

Semiconductor memory device

A cache memory including a first memory array and a main memory including a second memory array are integrated together on the same semiconductor substrate. Each memory cell in the first memory array is of a 2Tr1C type including: first and second transistors, the sources of which are connected together; and a data storage capacitor, one of the two electrodes of which is connected to the common source of the first and second transistors. Each memory cell in the second memory array is of a 1Tr1C type including: a third transistor; and a data storage capacitor, one of the two electrodes of which is connected to the source of the third transistor.

Automobile and/or replica thereof

Front bumper for an automobile

LIQUID CRYSTAL DISPLAY DEVICE AND APPARATUS WITH DISPLAY FUNCTION

Two liquid crystal panels are laid one over the other in a state that each of the liquid crystal panels is oriented in a forward direction. At least one spacer is detachably provided between the two liquid crystal panels. The liquid crystal panels are positioned relative to each other by a plurality of through-holes arrayed in a thickness direction of the spacer by an interval corresponding to the thickness of the spacer, and a projection engageable in one of the through-holes.

Imaging Apparatus And Image Improving Method

The present invention provides an imaging apparatus, comprising a multifocal lens (210) having a plurality of lens portions different from one another in focal length; an imaging device (29) for converting an image formed thereon by said multifocal lens (210) into an electric signal to be outputted therethrough as an image signal; a computing unit (33) for carrying out a weighted computing process on said image signal from said imaging device (29) in accordance with a predetermined compensation function to output a compensated image signal as an output image signal, and in which said compensation function is an inverse function obtained based on a point spread function with respect to an object disposed at a predetermined distance from an optical system constituted by said multifocal lens (210).

Front bumper for an automobile

Method of manufacturing semiconductor device

According to an embodiment, a method of manufacturing a semiconductor device includes forming a first modified zone in a wafer by irradiating the wafer with a laser having transmissivity with respect to the wafer along a part of a dicing line on the wafer, and forming a second modified zone in the wafer by irradiating the wafer with the laser along the dicing line on the wafer. The first modified zone is partially formed between a surface of the wafer and the second modified zone, a semiconductor interconnect layer being formed on the surface of the wafer.

Multi-layer display apparatus

The multi-layer display device apparatus has a first display part, a second display part arranged at the rear-side of the first display part, a transforming part arranged between the first and the second display part. The transforming part transforms a linear polarized light in to a non-polarized light. Further, the display device has a storage part which stores a parameter for adjusting the image quality of the image displayed on the first and second display part, and an image adjustment part which adjusts the image quality of the image displayed in the first and second display part based on the parameter stored in the storage part.

Cargo handling vehicle

A cargo handling vehicle comprises cargo carriers 21, a lift unit 1, a vehicle main body 24, and a running system 3, and the cargo handling vehicle further comprises a lift height detecting section 2 for detecting the vertical position of the cargo carriers 21, a traveling distance measuring section 4 for measuring a forward distance S1 covered by the vehicle main body 24 which starts its forward movement after the cargo carriers 21 are started to be raised and a rearward distance S2 covered by the vehicle main body 24 which starts its rearward movement after having completed its forward movement, and a movement control section 9 for prohibiting the lowering movement of the cargo carriers 21 until a rearward distance to be covered by the vehicle main body 24 which starts its rearward movement in a state in which the vertical position H2 of the raised cargo carriers 21 exceeds a preset reference height H1 becomes equal to or greater than the forward distance covered by the vehicle main body ...

DICING METHOD AND LASER PROCESSING APPARATUS

According to one embodiment, a dicing method is provided. The dicing method includes detecting a first distance between a first portion of a substrate and a first substrate information detection unit. The method also includes detecting a second distance between a second portion of the substrate a second substrate information detection unit, the second portion different from the first portion. Distance information is calculated between the substrate and a processing lens, which is located farther from the second substrate information detection unit than from the first substrate information detection unit, based on the detected first distance and the detected second distance, and he substrate is irradiated with laser light from the processing lens based on the distance information. 1. A laser processing apparatus comprising:a chuck table configured to hold a substrate;a processing laser light source configured to emit laser light;a processing lens configured to cause the laser light to irradiate the substrate;a first distance sensor configured to measure a first distance between a first position of the substrate and the first distance sensor;a second distance sensor configured to measure a second distance between a second position of the substrate and the second distance sensor, the second position different from the first position, the processing lens being located farther from the second distance sensor than from the first distance sensor;a calculation circuit configured to calculate a distance between the substrate and the processing lens based on the first distance and the second distance; anda substrate moving unit configured to move the substrate.2. The laser processing apparatus according to claim 1 , further comprising:a lens moving unit configured to change a position of the processing lens based on the calculated distance3. The laser processing apparatus according to claim 2 , wherein the lens moving unit comprises a piezoelectric element disposed at the ...

SEMICONDUCTOR MANUFACTURING APPARATUS

A semiconductor manufacturing apparatus according to an embodiment irradiates a semiconductor substrate with laser to form modified regions along an intended cut line in the semiconductor substrate. A light source emits the laser. An optical system comprises an objective lens configured to focus the laser in the semiconductor substrate. A light modulator is capable of modulating an energy density distribution of the laser. A controller controls the light modulator to displace a peak position of the energy density distribution of the laser from an optical axis of the objective lens in a relative movement direction of the optical system with respect to the semiconductor substrate. 1. A semiconductor manufacturing apparatus irradiating a semiconductor substrate with laser to form modified regions along an intended cut line in the semiconductor substrate , the apparatus comprising:a light source configured to emit the laser;an optical system comprising an objective lens configured to focus the laser in the semiconductor substrate;a light modulator configured to be capable of modulating an energy density distribution of the laser; anda controller configured to control the light modulator to displace a peak position of the energy density distribution of the laser from an optical axis of the objective lens in a relative movement direction of the optical system with respect to the semiconductor substrate.2. The apparatus of claim 1 , wherein the controller controls the light modulator to displace the peak position in a formation direction of the modified regions with respect to the semiconductor substrate from the optical axis of the objective lens.3. The apparatus of claim 1 , wherein the controller changes the light modulator to displace the peak position with respect to the optical axis of the objective lens in the movement direction when the movement direction is changed.4. The apparatus of claim 2 , wherein the controller changes the light modulator to displace the ...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

A semiconductor device is provided with a semiconductor substrate. A semiconductor element is provided on a first face of the semiconductor substrate. An energy absorbing film is provided on the first face, to absorb optical energy to generate heat. A first insulation film is provided on the semiconductor element and on the energy absorbing film. A second insulation film is provided on a second face of the semiconductor substrate, the second face being opposite to the first face. A first modified layer is provided on a side face of the semiconductor substrate, the side face being located between an outer edge of the first face and an outer edge of the second face. A second modified layer is provided on the side face between the energy absorbing film and the first modified layer. A cleavage face is provided on the side face between the first and second modified layers. 1. A semiconductor device comprising:a semiconductor substrate;a semiconductor element provided on a first face of the semiconductor substrate;an energy absorbing film provided on the first face,the energy absorbing film absorbing optical energy to generate heat;a first insulation film provided on the semiconductor element and on the energy absorbing film;a second insulation film provided on a second face of the semiconductor substrate, the second face being opposite to the first face;a first modified layer provided on a side face of the semiconductor substrate, the side face being located between an outer edge of the first face and an outer edge of the second face, the first modified layer including a crystal defect;a second modified layer provided on the side face between the energy absorbing film and the first modified layer, the second modified layer including a crystal defect; anda cleavage face provided on the side face between the first and second modified layers.2. The semiconductor device according to claim 1 , wherein the second modified layer is provided on the side face directly under the ...

DICING METHOD AND LASER PROCESSING APPARATUS

According to one embodiment, a dicing method is provided. The dicing method includes detecting a first distance between a first portion of a substrate and a first substrate information detection unit. The method also includes detecting a second distance between a second portion of the substrate a second substrate information detection unit, the second portion different from the first portion. Distance information is calculated between the substrate and a processing lens, which is located farther from the second substrate information detection unit than from the first substrate information detection unit, based on the detected first distance and the detected second distance, and he substrate is irradiated with laser light from the processing lens based on the distance information. 1. A dicing method comprising:detecting a first distance between a first portion of a substrate and a first substrate information detection unit;detecting a second distance between a second portion of the substrate a second substrate information detection unit, the second portion being different from the first portion;calculating distance information between the substrate and a processing lens, which is located farther from the second substrate information detection unit than from the first substrate information detection unit, based on the detected first distance and the detected second distance; andirradiating the substrate with laser light from the processing lens based on the distance information.2. The dicing method according to claim 1 , wherein a distance from a position in which the laser light passing through the processing lens arrives at the substrate to the first portion is equal to a distance from the first portion to the second portion.3. The dicing method according to claim 2 , further comprising repeating detecting the first distance claim 2 , detecting the second distance claim 2 , calculating the distance information claim 2 , and irradiating the substrate with the laser ...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor device includes a semiconductor wafer chip, a semiconductor device layer, and a reflectance reducing layer. The semiconductor wafer chip includes a device region and a peripheral region around the device region. The peripheral region includes a plurality of voids aligned along a side surface of the semiconductor wafer chip at a predetermined depth from a first surface of the semiconductor wafer chip. The semiconductor device element layer is on the first surface in the device region. The reflectance reducing layer is on the first surface of the semiconductor wafer chip in the peripheral region, that reduces a reflection of laser light incident from a second surface of the semiconductor wafer chip.

SEMICONDUCTOR DEVICE

A semiconductor device according to an embodiment includes a semiconductor substrate comprising a first face, and a second face on an opposite side to the first face. A semiconductor element is provided on the first face of the semiconductor substrate. A polycrystalline or non-crystalline first material layer is provided at least on an outer edge of the first face of the semiconductor substrate. A second material layer is provided on the second face of the semiconductor substrate. The second material layer transmits laser light.

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

According to one embodiment, a method of manufacturing a semiconductor device includes forming a plurality of stacked bodies on a substrate, each of the stacked bodies includes a plurality of semiconductor chips. The method further includes forming a plurality of first wires on the stacked bodies. The first wires connecting the stacked bodies to each other. The method further includes forming a resin layer on the stacked bodies and the first wires, then thinning he resin layer until the first wires are exposed. 1. A method of manufacturing a semiconductor device , the method comprising:forming a plurality of stacked bodies on a substrate, the stacked bodies includes a plurality of semiconductor chips;forming a plurality of first wires to connect the stacked bodies to each other;forming a resin layer on the stacked bodies and the first wires; andremoving portions of the resin layer until the first wires are exposed at an upper surface of the resin layer.2. The method of manufacturing a semiconductor device according to claim 1 , further comprising:forming a plurality of second wires on the stacked bodies, the second wires extending in a stacking direction of the semiconductor chips, whereinthe resin layer is formed on the stacked bodies, the first wires, and the second wires.3. The method of manufacturing a semiconductor device according to claim 1 , whereinat least one of the stacked bodies includes a metal plate on a semiconductor chip of the stacked body, anda first wire of the plurality of first wires is connected to the metal plate.4. The method of manufacturing a semiconductor device according to claim 3 , whereinat least one of the stacked bodies includes a first semiconductor chip and a second semiconductor chip,the second semiconductor chip has a planar area that is less than a planar area of the first semiconductor chip, andthe metal plate is on the first semiconductor chip.5. The method of manufacturing a semiconductor device according to claim 4 , wherein ...

遊技台のデータ表示システム

(57)【要約】 【課題】 店員が遊技台の台情報を的確に知ることがで きる遊技台のデータ表示システムを提供する。 【解決手段】 複数のパチンコ台１３…，２３…が列設 されて成るパチンコ島Ａ，Ｂごとに島用データハブ１ １，２１を設け、パチンコ島Ａ，Ｂ内の各パチンコ台が 発生する台情報を前記島データハブ１１，２１を介して ホール制御装置１０に伝達するように構成する。更に、 各島用データハブ１１，２１から前記台情報を受け取 り、台情報を表示するカウンタ内情報表示装置１を、ホ ールカウンタに設けた。

半導体装置の製造方法

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Semiconductor device

Method and device for adjusting index

溶接ア−ク監視装置

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

流動層予備還元炉

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

溶融還元炉の炭材装入装置

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Feeding device of raw material to melt-reducing furnace

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Identifying method for casting mark

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Manufacture of semiconductor integrated circuit

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Data display system of game stand

(57)【要約】 【課題】 或る遊技台島の遊技台を対象とした大当たり 情報等の取得が容易に行える遊技台のデータ表示システ ムを提供することを目的とする。 【解決手段】 複数のパチンコ台１３…，２３…が列設 されて成るパチンコ島Ａ，Ｂごとに島データハブ１１， ２１を設け、パチンコ島Ａ，Ｂ内の各パチンコ台が発生 する台情報（大当たり情報等）を前記島データハブ１ １，２１を介してホール制御装置１０に伝達するように 構成するとともに、前記島データハブ１１，２１から前 記台情報を受け取り、当該島データハブ１１，２１が担 当するパチンコ島のパチンコ台を対象とした台情報をそ れぞれ表示する島内情報表示装置１２，２２を設けた。

Automatic arc welding process and device therefor

Manufacture of semiconductor integrated circuit

Vacuum evaporation of cerium oxide thin film

Solid-state image sensor

Production of semiconductive integrated circuit

Semiconductor device

Fuel gas for metal working

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Manufacture of semiconductor integrated circuit device

Thin-film forming apparatus

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Manufacturing method of target for image pick-up tube

Semiconductor device

Detergent for metal

(57)【要約】 【課題】 １台でパレット単位、物品単位双方の荷役作 業を効率良く行いうる荷役車両を提供する。 【解決手段】 車体２にマスト装置Ｍを立設するととも に、このマスト装置Ｍに沿って昇降できかつ前面にフォ ークＦを装着するリフトブラケット３を具えた荷役車両 であって、車体２に、該車体２に配された操舵輪５の向 き変えを指示する第１のハンドル６、該車体２に配され た駆動輪５の回転を指示する第１のアクセル７、及び前 記リフトブラケット３の昇降指示を行う第１の荷役操作 具９を設けるとともに、操舵輪５の向き変えを指示する 第２のハンドル１１、駆動輪５の回転を指示する第２の アクセル１２、及びリフトブラケット３の昇降指示を行 う第２の荷役操作具１３を配した昇降枠４をリフトブラ ケット３とともに昇降可能に設けたことを特徴とする。

Manufacture of semiconductor integrated circuit device

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Vertical type heat accumulation tank

(57)【要約】 【課題】 竪型蓄熱槽において、槽内に温水もしくは冷 水を流入もしくは流出せしめるに際し、温水と冷水が混 合する遷移域を小とし、蓄熱効率を向上すること。 【解決手段】 槽１１の上部及び／又は下部に流通ヘッ ダ１２を設けてなる竪型蓄熱槽１０において、流通ヘッ ダ１２が、槽１１の軸に直交する多孔平面板１３と、多 孔平面板１３に被着される傘状体１４とを有し、多孔平 面板１３と傘状体１４とで整流室１５を区画形成してな るもの。

Anti-fogging laminate

(57)【要約】 【課題】 長時間にわたって高温・高湿度環境下 で保管された後でも、使用環境において優れた防曇性 （耐湿熱保管防曇性）が長期にわたって発現し得る防曇 性積層体を提供すること。 【解決手段】 基材の少なくとも片面側に樹脂と無機 化合物微粒子からなる層（Ａ層）および無機化合物微粒 子を主成分とする層（Ｂ層）を有し、かつ該面側の最表 層がＡ層であることを特徴とする防曇性積層体。

Cooling of sintered ore

Semiconductor device and method for fabricating the same, memory core chip and memory peripheral circuit chip

The semiconductor device of the invention includes a plurality of circuit blocks including a first circuit block and a second circuit block, a block parameter of the first circuit block being different from a block parameter of the second circuit block. In the semiconductor device, the first circuit block is formed on a first semiconductor chip, and the second circuit block is formed on a second semiconductor chip and is electrically connected with the first circuit block.

Method and instrument for measuring internal temperature of object

(57)【要約】 【課題】物体の内部温度を非接触により計測し得る物体 内部の温度計測方法を提供する。 【解決手段】冷却機を出た竹輪を、所定場所に配置され た温度センサ１により、冷却機を出てから所定時間経過 時における表面温度を検出し、この検出温度を判断処理 部３に入力するとともに予め入力されている設定温度と 比較し、検出温度が設定温度よりも低い場合には、竹輪 Ｆの内部温度が、後で腐らないような低い温度である と、また検出温度が設定温度以上である場合には、その 内部温度が、後で腐るような高い温度であると、それぞ れ推定する方法である。

Forklift truck

(57)【要約】 【課題】フォークをパレットに挿入する際のパレットロ ック装置との衝突を防止すること。また、パレットに対 するロックを確実に行えるようにすること。 【解決手段】車体に立設されたマストと、該マストに沿 って昇降可能に支持された昇降体と、該昇降体に支持さ れた左右一対のフォークと、該フォークに挿入されたパ レットを押圧してロックする左右一対のロックバーとを 備えたフォークリフトにおいて、上記各ロックバーを各 フォークの左右内側にそれぞれ隣接配置すると共に、各 ロックバーの左右内側の先端部に傾斜面を形成する。ま た上記ロックバーには、該ロックバーの旋回時にパレッ トに対し略平行姿勢で押圧できる所定長さの押圧面を形 成する。

Semiconductor device and method for fabricating the same, memory core chip and memory peripheral circuit chip

The semiconductor device of the invention includes a plurality of circuit blocks including a first circuit block and a second circuit block, a block parameter of the first circuit block being different from a block parameter of the second circuit block. In the semiconductor device, the first circuit block is formed on a first semiconductor chip, and the second circuit block is formed on a second semiconductor chip and is electrically connected with the first circuit block.

APPARATUS FOR DRIVING A DIVIDER TRAY

LA PRESENTE INVENTION CONCERNE UN APPAREIL POUR L'ENTRAINEMENT D'UN PLATEAU DIVISEUR DU TYPE A CROIX DE MALTE C. CONFORMEMENT A L'INVENTION LA DISTANCE X ENTRE LA BROCHE 28 ET L'ARBRE D'ENTRAINEMENT 26 EST FIXEE POUR ETRE LEGEREMENT PLUS COURTE QUE LA DISTANCE L ENTRE L'ARBRE D'ENTRAINEMENT 26 ET LA RAINURE RADIALE 23 DANS LA POSITION D'ARRET REGULIERE DU PLATEAU ASSUREE PAR UNE ROTATION ANGULAIRE PREDETERMINEE DE L'ARBRE A DE MANIERE QUE L'ENGAGEMENT ENTRE LA BROCHE 28 ET LA RAINURE RADIALE 23 SOIT LIBERE AVANT LA POSITION D'ARRET REGULIERE DU PLATEAU, LE PLATEAU RECEVANT ENSUITE UNE ROTATION JUSQU'A LA POSITION D'ARRET REGULIERE SOUS L'EFFET DE SON INERTIE APRES LA LIBERATION CI-DESSUS DE L'ENGAGEMENT. L'INVENTION S'APPLIQUE A DES APPAREILS D'ENTRAINEMENT D'UN PLATEAU DIVISEUR PRESENTANT UNE INERTIE IMPORTANTE. THE PRESENT INVENTION CONCERNS AN APPARATUS FOR DRIVING A DIVIDER PLATE OF THE MALTA C CROSS TYPE. IN ACCORDANCE WITH THE INVENTION, THE DISTANCE X BETWEEN THE SPINDLE 28 AND THE DRIVE SHAFT 26 IS SET TO BE SLIGHTLY SHORTER THAT THE DISTANCE L BETWEEN THE DRIVE SHAFT 26 AND THE RADIAL GROOVE 23 IN THE REGULAR STOP POSITION OF THE PLATE ENSURED BY A PREDETERMINED ANGULAR ROTATION OF THE SHAFT A SO THAT THE ENGAGEMENT BETWEEN THE SPINDLE 28 AND THE GROOVE RADIAL 23 IS RELEASED BEFORE THE REGULAR STOP POSITION OF THE PLATE, THE PLATE THEN RECEIVES A ROTATION UNTIL THE REGULAR STOP POSITION UNDER THE EFFECT OF ITS INERTIA AFTER THE ABOVE RELEASE OF THE ENGAGEMENT. THE INVENTION APPLIES TO EQUIPMENT FOR DRIVING A DIVIDER PLATE WITH SIGNIFICANT INERTIA.

INTERCHANGEABLE MULTI-HEAD TOOL MACHINE-TOOL

LA PRESENTE INVENTION CONCERNE UNE MACHINE-OUTIL A TETES MULTIPLES INTERCHANGEABLES DU TYPE COMPORTANT UN SOCLE AVEC UNE TABLE COULISSANTE, UN GROUPE MOTEUR DE COMMANDE ET UNE GLISSIERE ANNULAIRE 8 COMPRENANT UN RAIL AVANT MOBILE 6 ET UN RAIL ARRIERE FIXE 7, UNE PLURALITE DE TETES MULTIPLES 9 SUR LA GLISSIERE ANNULAIRE 8 ET CAPABLES DE TOURNER SOUS L'ACTION D'UNE TABLE INDEX DE MANIERE A AMENER L'UNE QUELCONQUE DES TETES MULTIPLES 9 SUR LE RAIL MOBILE 6, LE RAIL MOBILE 6 ET LE GROUPE MOTEUR 5 ETANT RELIES PAR UN BRAS TELESCOPIQUE 15 CONSTITUE PAR UN VERIN, LEDIT BRAS TELESCOPIQUE 15 ETANT SOLLICITE PAR UN RESSORT 12 VERS SA POSITION DE RETRAIT. CONFORMEMENT A L'INVENTION UNE SOURCE D'ALIMENTATION 18 EN FLUIDE SOUS PRESSION, TELLE QUE DE L'AIR OU AUTRE, EST MISE EN COMMUNICATION AVEC LE VERIN DU BRAS TELESCOPIQUE 15 PAR UN PASSAGE 18A DE MANIERE QUE LE BRAS 15 PUISSE ETRE REPOUSSE VERS SA POSITION DE RETRAIT PAR LE FLUIDE SOUS PRESSION ALIMENTE DANS LE CYLINDRE 13. THE PRESENT INVENTION CONCERNS A MACHINE-TOOL WITH INTERCHANGEABLE MULTIPLE HEADS OF THE TYPE INCLUDING A BASE WITH A SLIDING TABLE, A CONTROL MOTOR UNIT AND AN ANNULAR SLIDE 8 CONSISTING OF A MOVABLE FRONT RAIL 6 AND A FIXED REAR RAIL 7, A MULTIPLITY OF TESTS 9 ON THE ANNULAR SLIDE 8 AND CAPABLE OF ROTATING UNDER THE ACTION OF AN INDEX TABLE SO AS TO BRING ANY OF THE MULTIPLE HEADS 9 ON THE MOBILE RAIL 6, THE MOBILE RAIL 6 AND THE MOTOR UNIT 5 BEING CONNECTED BY A TELESCOPIC ARM 15 CONSTITUTES BY A CYLINDER, TELESCOPIC ARM 15 BEING SOLICITED BY A SPRING 12 TOWARDS ITS REMOVED POSITION. IN ACCORDANCE WITH THE INVENTION A PRESSURIZED FLUID SUPPLY SOURCE 18, SUCH AS AIR OR OTHERWISE, IS COMMUNICATED WITH THE TELESCOPIC ARM CYLINDER 15 BY A PASS 18A SO THAT ARM 15 CAN BE PUSHED TOWARDS ITS REMOVAL POSITION BY THE PRESSURIZED FLUID SUPPLIED IN THE CYLINDER 13.

Pallet position change device

Communication device connected to telephone line together with telephone set

ABSTRACT OF THE DISCLOSURE A communication device such as a video telephone is connected to a telephone line together with a telephone set at both parties. In response to an operation for removing a handset from a hook of the telephone set at this party, the video telephone at this party is initiated. Each of the video telephones includes a mode selecting switch and DTMF receiver which receives a DTMF signal from one of the telephone sets and decodes a received DTMF signal to output data representative of the mode of the video telephone. When a flag "1" is set, a mode of the video telephone at this party can be controlled in response to the DTMF signal which is received by the DTMF receiver from the telephone set at this party and, when a flag "2" is set a mode of the video telephone at this party can be controlled in response to the DTMF signal which is received by the DTMF receiver from the telephone set at the other party.

TRANSFER TYPE MACHINING INSTALLATION

INTERCHANGEABLE MULTI-HEAD MACHINE TOOL

Forklift truck includes a command unit ensuring that the lift arms go down only once the frame has completed his backwards movement

Frame (24) has a forklift (21) attached to it. The lifting arms position is measured along with the longitudinal movement of the frame. A command unit (4) ensures that the lift goes down only once the frame has completed his backwards movement.

Production of semiconductor device

HANDLING VEHICLE, RETRACTABLE TROLLEY AND FORKLIFT

APPARATUS FOR RECOVERING HEAT FROM MOLTEN DAIRY

MACHINING INSTALLATION TYPE TRANSFER

LA PRESENTE INVENTION CONCERNE UNE INSTALLATION D'USINAGE DU TYPE TRANSFERT DANS LEQUEL LES PIECES SONT TRANSPORTEES DE FACON INTERMITTENTE ENTRE PLUSIEURS POSTES DE TRAVAIL DISPOSES DE L'AMONT VERS L'AVAL ET MUNIS CHACUN D'UNE MACHINE-OUTIL POUR USINER LES PIECES SE TROUVANT A CE POSTE. CONFORMEMENT A L'INVENTION CHACUNE DES MACHINES-OUTILS 7-1 A 7-3 EST DU TYPE A TETE MULTIPLE INTERCHANGEABLE COMPORTANT PLUSIEURS TETES DA, TB, DA ET TB POUVANT ETRE MISES EN OEUVRE SELECTIVEMENT ET CHACUN DES POSTES DE TRAVAIL EST MUNI EN AMONT EN 11-1, 11-2, 11-3 D'UN DETECTEUR POUR LIRE LE TYPE DE LA PIECE QUI SE TROUVE DANS CETTE POSITION DE SORTE QUE, PENDANT LE TRANSPORT DE LA PIECE POUR L'AMENER AU POSTE D'USINAGE, CELLE DES TETES MULTIPLES QUI CORRESPOND AU TYPE DE LA PIECE LUE EST SELECTIONNEE POUR ETRE MISE EN OEUVRE PAR UN SIGNAL OBTENU DU DETECTEUR AMONT. L'INSTALLATION PERMET DE REALISER SUR UNE MEME INSTALLATION PLUSIEURS FORMES DE PROCESSUS D'USINAGE.

Resin film

(57)【要約】 【課題】可視光線をよく透過しかつ輻射線の透過を効率 的に遮断する樹脂積層フィルムを提供すること 【解決手段】屈折率が１．４７〜１．６５の範囲である 輻射線遮断剤を少なくとも１種と、該輻射線遮断剤と化 学組成が異なる輻射線遮断剤を含有する熱可塑性樹脂フ ィルムであって、該熱可塑性樹脂フィルム中の輻射線遮 断剤の量の総和が熱可塑性樹脂１００重量部あたり０． ５重量部以上、該フィルムの２３℃における輻射線透過 指数が３５以下、全光線透過率が８０％以上である樹脂 フィルム。

display device

Die vorliegende Erfindung hat die Aufgabe, eine Anzeigevorrichtung bereitzustellen, bei der eine effektive Lichtquellensteuerung vorgenommen werden kann, ohne dass auf Seiten des Anzeigeteils ein spezieller Kreis zur Bildanalyse/Erzeugung von Daten zur Steuerung der Lichtquelle erforderlich ist. Die vorliegende Erfindung ist eine Anzeigevorrichtung, die Folgendes umfasst: ein Anzeigepanel (22), eine Lichtquelle (24), die das Anzeigepanel (22) beleuchtet, und einen Speicherteil (13), der zusammen mit Bilddaten Lichtquellensteuerdaten, die Daten zur Steuerung der Lichtquelle bei der Darstellung von Bildern gemäß den Bilddaten sind, speichert. The present invention has for its object to provide a display device in which an effective light source control can be carried out without the need for a special circuit for image analysis / generation of data for controlling the light source on the part of the display part. The present invention is a display device comprising: a display panel (22), a light source (24) that illuminates the display panel (22), and a storage part (13) that, together with image data, light source control data, the data for controlling the light source when displaying images according to the image data.

Semiconductor ic resistance element process

Film forming device

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Clean room device

(57)【要約】 【課題】 クリーンルーム装置において低騒音化及び省 エネルギ化を達成する。 【解決手段】 システム天井式クリーンルーム１０にお いて、ファン２２吐出側ダクト２６にマイク３２、３４ 及びスピーカ３６を備え、コントローラ３８で気流伝搬 騒音と逆相の音波信号を発生し、スピーカ３６から音波 を発し、騒音との間で干渉させ、騒音レベルを低下させ ると共に、前記ダクト２６後方側に直角型エルボ４０を 備え、騒音を反射し、反射波と干渉させ、更なる低騒音 化を達成する。

Production of semiconductor devices

Laminated antifogging film

(57)【要約】 【課題】防曇性と防曇性の持続性に優れた積層防曇フィ ルムを提供すること。 【解決手段】エチレン−α−オレフィン共重合体を主成 分とする層（Ａ層）の少なくとも片面に防曇層（防曇 層）を積層してなる積層防曇フィルム。

Preliminary reducing method of chromium ore

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Hot semisolid material packaging with dynamic precooling and rope cutting

ABSTRACT A method of packing a semisolid compound into a bag comprising the steps of precooling a high temperature semisolid compound to such a temperature at which it can mantain the desired viscosity, filling said precooled semisolid compound into a packing bag made of synthetic resin while cooling its outer surface with water, heat-sealing an opening part of the bag, putting the bag in a water tank for cooling, removing the cooled bag and transporting it, and an apparatus for carrying out the above described method.

Polyolefin resin composition and laminated film comprising the same

A fluorescent composite containing 100 wt. parts of a shielding agent and 0.005 to 10 wt. parts of a fluorescent substance provides a polyolefin resin composition and laminated film which maintain light quality modifying properties of the fluorescent substance for a long time, and suppress the discoloration of the fluorescent substance under outdoor exposure conditions, and the laminated film is advantageously used as an agricultural film.

Manufacture of semiconductor device

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Manufacture of semiconductor device

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Manufacture of semiconductor device

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Image pickup tube

Polyolefin resin composition

A polyolefin resin composition containing a polyolefin resin, 0.03 to 60 wt. % of a double hydroxide comprising lithium, aluminum and at least one element selected from the group consisting of alkaline earth elements, transition metals, Zn and Si, and 0.02 to 5 wt. % of a hindered amine compound, which has good weather resistance and useful as a material for the production of films, in particular, agricultural films.

Metallic thin film wiring

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Manufacture of semiconductor device

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Antifog film

An antifog film comprising (a) a thermoplastic resin base film, (b) at least one inorganic colloid layer, and (c) at least one hydrophilic resin layer, the inorganic colloid layer and the hydrophilic resin layer being at least on the same side of the base film and the hydrophilic resin layer being the outermost layer of the side. The antifog film of the present invention has an excellent long-term antifog property.

Magnetic head and production

(57)【要約】 【課題】 或る遊技台島の遊技台を対象とした大当たり 情報等の取得が容易に行える遊技台のデータ表示システ ムを提供する。 【解決手段】 複数のパチンコ台が背向配置で列設され て成る遊技台島ごとに島データハブを設け、遊技台島内 の各遊技台が発生する台情報を前記島データハブを介し てホール制御装置に伝達するように構成するとともに、 前記島データハブから前記台情報を受け取り、当該島デ ータハブが担当する遊技台島の一方の面側の遊技台の台 情報と他方の面側の遊技台の台情報とを分けて表示する 島内情報表示装置を、前記遊技台島の所定箇所に設け た。

Semiconductor integrated circuit device and manufacture thereof

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Solid-state image pickup device

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Data display system for game stand

(57)【要約】 【課題】 遊技台島を対象とした遊技台の大当たり情報 等の取得が容易に行え、且つ店員の遠隔操作送信機によ る操作で表示内容を適宜切り換えることができる遊技台 のデータ表示システムを提供する。 【解決手段】 複数のパチンコ台１３…（２３…）が列 設されて成るパチンコ島Ａ（Ｂ）の各パチンコ台が発生 する台情報を受け取り、当該パチンコ島Ａ（Ｂ）のパチ ンコ台１３…（２３…）を対象とした台情報を表示する 島内情報表示装置１２（２２）を当該パチンコ島Ａ （Ｂ）の所定箇所に設ける。一方、店員は、前記島内情 報表示装置１２（２２）の表示内容を切り換えるための 遠隔操作送信機３２を備える。前記島内情報表示装置１ ２（２２）は、店員が所持する遠隔操作送信機３２から の信号を受信し、この受信した信号に応じて表示内容を 切り換える表示切換制御手段を備える。

Method for selective deposition of metal

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Formation of thin film

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Solid-state device for forming colour images, containing a coloured filter

The invention relates to a solid-state device for forming colour images. This device includes an array of photosensitive cells 3 arranged in the form of a matrix and receiving light energy from an image, means of horizontal and vertical scanning 4, 5, 6 serving for reading the electric charge of the said array, a set of coloured filters formed respectively on the various photosensitive cells, output devices for the array of cells, including output conductors 11A to B and switching circuits 9 and means producing electrical signals corresponding to the colour components and to the luminance forming an image signal. Application in particular to devices for forming colour images suppressing the Moiré phenomenon.

Semiconductor device and manufacture thereof

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Manufacture of semiconductor device

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Preparation of semiconductor device

Detecting method for welding groove

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Polyolefin resin covering film and method for raising plants

A polyolefin resin covering film having a first layer of a polyolefin resin and second and third layers which are provided on respective sides of the first layer and made of a polyolefin resin containing 20 wt. % or less of a polar group-containing vinyl monomer, in which the polyolefin resin covering film contains 6 to 50 wt. % of a IR absorber based on the weight of the covering film, and has a IR absorbance of 70 to 85 % at 27°C, which covering film is preferably used as a covering film of a green house or tunnel for protected horticulture to raise a strong-light produce.

SUBSTITUABLE MULTIPLE HEAD MACHINE TOOL

Manufacture of semiconductor device

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Gang head replacing type machine tool

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Machine tool

A machine tool comprises an upstanding column, a tool-driving unit vertically movable on the column, and a pair of guide rails on a front surface of the column to extend vertically thereon and horizontally spaced apart from each other for guiding the upward and downward movement of the tool-driving unit. The tool-driving unit includes a lift frame on the guide rails and a tilting-type turret head which is supported on a front surface of the lift frame and is rotatable about an axis inclined relative to the longitudinal direction of the frame in a horizontal plane. One of the pair of guide rails is relatively disposed forwardly of the other guide rail, so that the individual guide rails both assume positions close to the turret head thereby to minimize the amount of overhang of the tool-driving unit.

Production lines

Patent JPS5943035B2

Solid state image pickup device

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Two-dimensional code, method for converting two-dimensional code into speech, method for converting text document into speech, braille data creation apparatus

A two-dimensional code (3) consists of a first figure including line segments (LS11-LS14, LS31-LS34, LS51-LS54, LS71-LS74) arranged at pitches corresponding to a small region size around a data block (2) and index lines (R21-R24, R41-R44, R61-R64, R81-R84) orthogonally extending from substantially the center of each segment and an L-shaped second figure (LC) having ends continuous with ends of the segments (LS54 and LS74). The index lines (R21-R24, R41-R44) are arranged to face the outside of the data block (2) while the index lines (R61-R64, R81-R84) are arranged to face the data block (2). In accordance with these index lines, data density information and positioning information are fetched during decoding.

Patent JPH02861B2

Method for manufacturing catalyst for synthesizing unsaturated carboxylic acid

【課題】メタクリル酸、アクリル酸などの不飽和カルボン酸合成において、高い選択率及び収率で不飽和カルボン酸を合成可能な不飽和カルボン酸合成用触媒の製造方法を提供する。 【解決手段】少なくとも（１）触媒原料を水溶媒中で混合し、原料混合物を調製する原料混合物調製工程、（２）前記原料混合物を、３００℃未満の温度で乾燥し、触媒前駆体を調製する乾燥工程、（３）前記触媒前駆体を最高温度３００℃以上で焼成する焼成工程、 とを有し、前記工程（１）において、ヒ素、テルル、アンチモンのうち少なくとも１つの元素の原料をその添加量の一部の量とし、３００℃未満の温度で乾燥して予備乾燥体を形成した後、該予備乾燥体に前記ヒ素、テルル、アンチモンのうち少なくとも１つの元素の原料の残りを添加して原料混合物を調製することを特徴とする不飽和カルボン酸合成用触媒の製造方法。 【選択図】なし

Manufacture of semiconductor device

Semiconductor device