Настройки

Укажите год
-

Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

Подробнее
-

Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

Подробнее

Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Укажите год
Укажите год
Применить Всего найдено 5. Отображено 5.
29-06-2011 дата публикации

Early-stage production method for machining surface of sapphire substrate for dry etching

Номер: CN0102110592A
Автор: PENG CHEN, LUANJING WANG, XUEYUN SONG, CHONGBIN TAN, FENG XU, ZHOU XU, ZHENLONG WU, FENG GAO, CHEN PENG, WANG LUANJING, SONG XUEYUN, TAN CHONGBIN, XU FENG, XU ZHOU, WU ZHENLONG, GAO FENG
Принадлежит:

The invention discloses an early-stage production method for machining a surface of a sapphire substrate for dry etching, and belongs to the technical field of semiconductors. The method comprises the following steps of: preparing a photoetching pattern on the sapphire substrate by a photoetching technology; performing evaporation on the sapphire substrate by using vacuum evaporation equipment to form a multilayer metal structure of A/Ni/B/Ni/C/Ni...to serve as a mask layer for etching the sapphire substrate; placing the sapphire substrate in a photoresist removing agent corresponding to a photoresist; and performing a photoresist stripping process to obtain a metal mask structure. A prepared semi-finished product, namely the sapphire substrate with the metal mask structure, can meet the process requirements of the sapphire substrate on various kinds of dry etching of different depth dimensions; and the surface can be machined by a dry etching technology.

Подробнее
Номер записи: 1
16-04-2014 дата публикации

GaN-based LED integrated chip with multiple light-emitting sub areas

Номер: CN103730479A
Автор: XU ZHOU, CHEN PENG, TAN CHONGBIN, XU ZHAOQING, ZHANG LIN, WU ZHENLONG, XU FENG, GAO FENG, SHAO YONG, WANG LUANJING, SONG XUEYUN
Принадлежит:

The invention discloses a GaN-based LED integrated chip with multiple light-emitting sub areas, and belongs to the technical field of LED chip structures. The GaN-based LED integrated chip with the multiple light-emitting sub areas comprises a substrate, an n-GaN layer, a quantum well active area, a p-GaN layer, a current spreading layer, a P electrode and at least two light-emitting sub areas. Grooves which are mutually isolated are formed between adjacent light-emitting sub areas, and the bottoms of the grooves are placed on the surface of the substrate. According to the GaN-based LED integrated chip with the multiple light-emitting sub areas, the open circuit probability is lowered to the maximum degree when an interconnecting wire stretches across the grooves, the emergent probability of internal total reflected light of the chip can be improved, internal reflection loss is reduced, and therefore light extraction efficiency is improved.

Подробнее
Номер записи: 2
09-04-2014 дата публикации

MOCVD epitaxy processing method of AlInGaN quaternary alloy thin-film material

Номер: CN103715071A
Автор: XU FENG, CHEN PENG, TAN CHONGBIN, XU ZHOU, ZHANG LIN, WU ZHENLONG, GAO FENG, XU ZHAOQING, SHAO YONG, WANG LUANJING, SONG XUEYUN
Принадлежит:

An MOCVD epitaxy processing method of an AlInGaN quaternary alloy thin-film material belongs to the technical field of semi-conductors. The AlInGaN quaternary alloy thin-film material is formed by virtue of using a metal organic chemical vapor deposition (MOCVD) epitaxy technology and employing a method of alternatively matching and growing ternary alloy InGaN and AlGaN materials in a thickness of atomic level. The AlInGaN quaternary alloy thin-film material prepared by using the aforementioned technology can achieve the following parameter indexes: (1) the half-peak height and width of an X-ray diffraction (XRD) (002) symmetry plane < 240 seconds; (2) the material surface roughness < 1 nm; and (3) the c-face lattice constant mismatch degree with respect to GaN < 0.5%.

Подробнее
Номер записи: 3
31-08-2011 дата публикации

Method of photolithography on sapphire substrate

Номер: CN0102169288A
Автор: PENG CHEN, LUANJING WANG, XUEYUN SONG, CHONGBIN TAN, FENG XU, ZHOU XU, ZHENLONG WU, FENG GAO, CHEN PENG, WANG LUANJING, SONG XUEYUN, TAN CHONGBIN, XU FENG, XU ZHOU, WU ZHENLONG, GAO FENG
Принадлежит:

The invention relates to a method of photolithography on a sapphire substrate and belongs to the field of semiconductor technology. The method comprises the steps of preparing a photoresist adhesion layer with a thickness of 5 nanometers to 2 micrometers on the sapphire substrate; spin coating a photoresist on the photoresist adhesion layer; and making a photolithographic pattern on the photoresist. According to the invention, prior to the photolithography process, a silicon nitride thin film or a polycrystalline silicon thin film or a silicon dioxide thin film or a silicon oxynitride thin film is prepared on the sapphire substrate to be the adhesion layer between the photoresist and the sapphire substrate. Therefore, adhesiveness of the photoresist on the sapphire substrate is enhanced, and a problem of the photoresist shedding or the photolithographic pattern deformation caused by poor adhesiveness during the photolithography process on the sapphire substrate is solved.

Подробнее
Номер записи: 4
09-04-2014 дата публикации

Metal reflector electrode high-voltage LED chip preparation method

Номер: CN103715315A
Автор: XU ZHAOQING, CHEN PENG, TAN CHONGBIN, XU ZHOU, ZHANG LIN, WU ZHENLONG, XU FENG, GAO FENG, XIA QUN, SHAO YONG, WANG LUANJING, SONG XUEYUN
Принадлежит:

A metal reflector electrode high-voltage LED chip preparation method belongs to the technical field of semiconductor illumination. The method comprises the steps of arranging multiple electrically-isolated microcrystallites in an array on a GaN-base material of a substrate, preparing N steps, depositing transparent insulation layers, and preparing P electrodes and N electrodes. Metal vapor-plating layers used for preparing the P electrodes cover the edges of the insulation layers and the side faces of the microcrystallites. The insulation layers are deposited on a Si base plate, and metal connecting lines and bumps used for back bonding are vapor-plated on the insulation layers. A prepared GaN chip is mounted on the Si base plate in an upside-down manner. The microcrystallites arranged in an array are electrically connected with the metal connecting lines and the bumps on the Si base plate. The P electrodes of the invention not only has an electrode function, but also has a reflector function ...

Подробнее
Номер записи: 5