23-05-2023 дата публикации
Номер: CN116151167A
Автор:
XIANG NIANWEN,
NI ZHENG'AO,
LI KEJIE,
TIAN PENGKUN,
TAN YONGXU,
KE YIFAN,
QIN CHENGCHENG,
LI ZHAOKUN,
WU YEXIN,
WANG DONGWEI,
LI LONGLONG,
SUN DIAN,
LEI JIAHUA,
YUAN QIANKUN,
WEI DINGSHENG,
WANG LINGFENG,
ZHANG YONGCHUN,
DU YUCHEN,
YANG CUILING,
YANG CHUN
Принадлежит:
The invention provides an equivalent circuit model of a drift step recovery diode, and belongs to the technical field of semiconductor devices. The topological structure of the equivalent circuit model comprises a parasitic resistor, a parasitic inductor, a diode D, a voltage-controlled switch, a diffusion capacitor, a barrier capacitor, a parasitic capacitor and a voltage control port. The diode D represents the multi-layer P-N structure of the drift step recovery diode through the maximum reverse direct-current voltage, the breakdown voltage, the transition time and the gradient coefficient, and the barrier capacitor, the diffusion capacitor, the voltage-controlled switch and the voltage control port are used for representing the capacitance characteristics of the drift step recovery diode in the switching process. And meanwhile, various parasitic parameters of the drift step recovery diode are also considered, so that the model can reflect the dynamic electrical characteristics of the ...
Подробнее
