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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 9. Отображено 9.
04-05-2011 дата публикации

Main shaft device capable of enhancing cooling effect

Номер: CN0102039426A
Автор: Ding Zhihui, Wu Jiada
Принадлежит:

The invention discloses a main shaft device capable of enhancing cooling effect, which comprises a mandrel unit, a shell sheathed outside the mandrel unit, an outside cooling jacket sheathed between the mandrel unit and the shell, a motor, a front bearing, a rear bearing and a thrusting bearing, wherein the motor, the front bearing, the rear bearing and the thrusting bearing are installed between the mandrel unit and the outside cooling jacket; the outside cooling jacket is provided with an outside cooling channel; and the motor, the front bearing, the rear bearing and the thrusting bearing are cooled by means of the arrangement of the outside cooling channel so as to achieve the optimal cooling effect.

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Номер записи: 1
26-08-2009 дата публикации

Method for preparing AlxGa(1-x)N triplet alloy semiconductor film at normal temperature

Номер: CN0101514483A
Автор: WU JIADA, SUN JIAN, FANG FANG, GAN JIE, JIADA WU, JIAN SUN, JIE GAN
Принадлежит:

The invention relates to a method for preparing AlxGa(1-x)N triplet alloy semiconductor film at normal temperature. The method utilizes the same laser bean to obtain two laser beans through a beam splitter mirror, wherein, one laser bean ablates aluminum target and provides aluminum for a film layer, and the other laser bean ablates AsGa target and provides gallium for the film layer; active nitrogen formed by nitrogen microwave discharge provides nitrogen for the film layer provides nitrogen for the film layer, and the aluminum, the gallium and the nitrogen which have gas phase react to form the AlxGa(1-x)N alloy semiconductor film that is sedimentated on a substrate. The invention provides a method for preparing AlxGa(1-x)N film with different aluminum-gallium ratio, especially high aluminum component at normal temperature, and the non-balancing characteristics lead the components forming the film layer to break through the restriction of equilibrium solid solubility. The two laser beans ...

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Номер записи: 2
26-08-2015 дата публикации

Negative pressure automatic regulating system for material-feeding and cigarette-rod-forming machine of cigarette maker

Номер: CN104856218A
Автор: PAN ANYUE, HUANG WENZHONG, LI FEN, XIONG BIN, HUANG CONG, YANG GUOXIN, ZHAI HAIMING, ZHOU ZHENGYOU, WU JIADA, LUO XIAN
Принадлежит:

The invention relates to a negative pressure automatic regulating system for a material-feeding and cigarette-rod-forming machine of a cigarette maker. The negative pressure automatic regulating system comprises a pneumatic control valve installed on each set of cigarette maker, two negative pressure sensors, a control unit, an industrial control computer mounted on the cigarette maker and another industrial control computer mounted on a wind dedusting system. The pneumatic control valve is installed on a negative pressure air duct of the material-feeding and cigarette-rod-forming machine and replaces an original hand-operated control valve; the two negative pressure sensors are respectively mounted on the negative pressure air duct at positions before and after the pneumatic control valve; and the signal of an interlock switch of an air compartment of the material-feeding and cigarette-rod-forming machine is connected to the control unit. The negative pressure automatic regulating system ...

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Номер записи: 3
05-05-2010 дата публикации

Method for preparing metal oxide film with high dielectric constant on silicon substrate

Номер: CN0101702398A
Автор: GAN JIE, GAO KUN, SUN JIAN, WU JIADA, JIE GAN, KUN GAO, JIAN SUN, JIADA WU
Принадлежит:

The invention belongs to the technical field of the preparation of materials, in particular to a method for preparing a metal oxide film with high dielectric constant on a silicon substrate. In the invention, a metal film of an IIIA family, an IIIB family or an IVB family is deposited on the surface of a silicon substrate by a physical vapour deposition method, and then oxidation treatment is carried out on the metal film deposited on the surface of silicon by an oxygen plasma beam generated by ECR microwave discharge to prepare the metal oxide film. In the preparation process, the direct contact of the surface of the silicon and an oxygen-containing atmosphere is avoided, thereby avoiding forming an SiOx transition layer between the substrate and the film.

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Номер записи: 4
15-01-2003 дата публикации

Process for preparing compound film at ordinary temp

Номер: CN0001390977A
Автор: WU JIADA, LI FUMING, LING HAO, JIADA WU, FUMING LI, HAO LING
Принадлежит:

A process for preparing compound film features that the microwave plasmas are generated by microwave discharge to particular working gas in electronic cyclone resonance condition, the laser plasma are generated by using laser to ablate relative source material target in the microwave plasma environment, and the reaction between two kinds of plasmas and the bombardment of low-energy plasma beam tosubstrate and film layer can promote nucleation and film generation.

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Номер записи: 5
06-10-2010 дата публикации

Method for preparing metal oxide thin film without transition layer on silicon substrate

Номер: CN0101851741A
Автор: GAN JIE, SUN JIAN, TANG WENTAO, WU JIADA, JIE GAN, JIAN SUN, WENTAO TANG, JIADA WU
Принадлежит:

The invention belongs to the field of material preparation, and discloses a method for preparing a metal oxide thin film without a transition layer on a silicon substrate, in particular the method for preparing an IVB-group metal oxide thin film without an SiOx transition face layer and with a good interface on the silicon substrate. In the method of the invention, IVB-group highly-pure metals and highly-pure oxygen are taken as raw materials, deficient oxygen in an electron cyclotron resonance state and under the atmospheric pressure of 1*10<-2> to 9*10<2> Pa is triggered by ablating an IVB-group metal target with a pulse laser beam to perform microwave discharge to form oxygen plasma, and the oxygen plasma is utilized to assist in the deposition of the pulse laser on the surface of the silicon substrate at the normal temperature of 30 to 80 DEG C to prepare the IVB-group metal oxide thin film. The method can prevent the oxidation of the silicon surface so as to avoid the formation of ...

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Номер записи: 6
21-07-2010 дата публикации

Method for preparing ZnSe nano wire films by pulsed laser ablation deposition

Номер: CN0101780946A
Автор: LAI JUSHUI, SHEN YIQUN, WU JIADA, XU NING, YING ZHIFENG, JUSHUI LAI, YIQUN SHEN, JIADA WU, NING XU, ZHIFENG YING
Принадлежит:

The invention belongs to the technical field of film preparation and particularly relates to a method for preparing ZnSe nano wire films by pulsed laser ablation deposition. In the method, a pulsed laser ablation solid zinc selenide (ZnSe) material with high power is utilized, and the surface of the ZnSe material is quickly ablated and evaporated in a very short time to form a pinniform plasma. The plasma comprises zinc (Zn) and selenium (Se) atoms and ions. The ZnSe plasma has a high temperature and kinetic energy, so the ZnSe nano wire can grow under a lower substrate temperature. The synthesized film consists of uniform ZnSe nanowires, the average size of the ZnSe nano wires is about 20-30 nm, and the length is about 500 nm.

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Номер записи: 7
27-06-2012 дата публикации

Method for preparing metal oxide thin film without transition layer on silicon substrate

Номер: CN0101851741B
Автор: GAN JIE, SUN JIAN, TANG WENTAO, WU JIADA, JIE GAN, JIAN SUN, WENTAO TANG, JIADA WU
Принадлежит:

The invention belongs to the field of material preparation, and discloses a method for preparing a metal oxide thin film without a transition layer on a silicon substrate, in particular the method for preparing an IVB-group metal oxide thin film without an SiOx transition face layer and with a good interface on the silicon substrate. In the method of the invention, IVB-group highly-pure metals and highly-pure oxygen are taken as raw materials, deficient oxygen in an electron cyclotron resonance state and under the atmospheric pressure of 1*10<-2> to 9*10<2> Pa is triggered by ablating an IVB-group metal target with a pulse laser beam to perform microwave discharge to form oxygen plasma, and the oxygen plasma is utilized to assist in the deposition of the pulse laser on the surface of the silicon substrate at the normal temperature of 30 to 80 DEG C to prepare the IVB-group metal oxide thin film. The method can prevent the oxidation of the silicon surface so as to avoid the formation of ...

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Номер записи: 8
11-02-2004 дата публикации

常温下微波等离子体和激光联合处理材料表面的方法

Номер: CN0001473952A
Автор: WU JIADA, SUN JIAN, LING HAO, JIADA WU, JIAN SUN, HAO LING, 吴嘉达
Принадлежит:

The present invention relates to the material surface treating process with microwave plasma and laser under normal temperature. The process includes electronic cyclically resonating and microwave discharge of specific working gas to produce microwave plasma, leading the plasma into material treating chamber, leading laser into material treating chamber, and acting the material surface with microwave plasma and laser simultaneously so as to make the material surface change in component or structure and to improve the performance of material surface. The present invention has wide application range, convenient parameter regulation and capacity of local treatment.

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Номер записи: 9