Настройки

Укажите год
-

Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

Подробнее
-

Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

Подробнее

Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Укажите год
Укажите год
Применить Всего найдено 2. Отображено 2.
23-05-2019 дата публикации

WAFER-BASED CHARGED PARTICLE ACCELERATOR, WAFER COMPONENTS, METHODS, AND APPLICATIONS

Номер: US20190159331A1
Автор: Ardanuc Serhan, Ji Qing, Kadayra Basavarajappa Vinaya Kumar, Lal Amit, Persaud Arun, Schenkel Thomas, Seidl Peter, Waldron Will
Принадлежит: CORNELL UNIVERSITY

A wafer-based charged particle accelerator includes a charged particle source and at least one RF charged particle accelerator wafer sub-assembly and a power supply coupled to the at least one RF charged particle accelerator wafer sub-assembly. The wafer-based charged particle accelerator may further include a beam current-sensor. The wafer-based charged particle accelerator may further include at least a second RF charged particle accelerator wafer sub-assembly and at least one ESQ charged particle focusing wafer. Fabrication methods are disclosed for RF charged particle accelerator wafer sub-assemblies, ESQ charged particle focusing wafers, and the wafer-based charged particle accelerator. 1. A wafer-based charged particle accelerator , comprising:a charged particle source; 'a wafer having electrical isolation between at least a first and a second electrically conductive electrode,', 'at least one RF charged particle accelerator wafer sub-assembly comprisingwherein at least the first and the second electrode are disposed on respective and opposing first and second sides of the wafer, and create an electric field,further wherein the wafer has one or more orifices through which a charged particle beam can travel, encountering the electric field generated by the at least first and second electrode, a) a thin film inductor in series with an air gap capacitor, or', 'b) a coplanar waveguide resonator,, 'further wherein the second electrode is in the form of an RF resonator configured as either'} 'RF voltage-generating electronics disposed on the substrate; and', 'so as to transform a low voltage on the substrate to a high voltage on the second side of the substrate; and'}a power supply operatively coupled to the at least one RF charged particle accelerator wafer sub-assembly.2. The wafer-based charged particle accelerator of claim 1 , further comprising a beam current-sensor disposed in eithera) a single RF wafer, orb) a separate wafer disposed in the drift space.3. The ...

Подробнее
Номер записи: 1
11-06-2020 дата публикации

WAFER-BASED CHARGED PARTICLE ACCELERATOR, WAFER COMPONENTS, METHODS, AND APPLICATIONS

Номер: US20200187344A1
Автор: Ardanuc Serhan, Ji Qing, Kadayra Basavarajappa Vinaya Kumar, Lal Amit, Persaud Arun, Schenkel Thomas, Seidl Peter, Waldron Will
Принадлежит: CORNELL UNIVERSITY

A wafer-based charged particle accelerator includes a charged particle source and at least one RF charged particle accelerator wafer sub-assembly and a power supply coupled to the at least one RF charged particle accelerator wafer sub-assembly. The wafer-based charged particle accelerator may further include a beam current-sensor. The wafer-based charged particle accelerator may further include at least a second RF charged particle accelerator wafer sub-assembly and at least one ESQ charged particle focusing wafer. Fabrication methods are disclosed for RF charged particle accelerator wafer sub-assemblies, ESQ charged particle focusing wafers, and the wafer-based charged particle accelerator. 15-. (canceled)6. A wafer-based charged particle accelerator , comprising:a first RF charged particle accelerator wafer sub-assembly comprising a wafer, the wafer defining an orifice through which a charged particle beam can travel, the wafer further having electrical isolation between a first electrically conductive electrode disposed on a first side of the wafer and a second electrically conductive electrode disposed on an opposing second side of the wafer to form an electric field interacting with the orifice so that a charged particle beam traveling through the orifice will encounter an electric field generated by the first electrode and second electrode; andRF voltage-generating electronics disposed on the wafer.71. The wafer-based charged particle accelerator of claim , further comprising:a power supply operatively coupled to the first RF charged particle accelerator wafer sub-assembly.81. The wafer-based charged particle accelerator of claim , wherein the second electrode is in the form of an RF resonator configured as either a) a thin film inductor in series with an air gap capacitor , or b) a coplanar waveguide resonator , so as to transform a low voltage on the wafer to a high voltage on the second side of the wafer.9. The wafer-based charged particle accelerator of ...

Подробнее
Номер записи: 2