Semiconductor device and bump formation process

A semiconductor device includes a solder bump overlying and electrically connected to a pad region, and a metal cap layer formed on at least a portion of the solder bump. The metal cap layer has a melting temperature greater than the melting temperature of the solder bump.

Semiconductor Device And Bump Formation Process

A semiconductor device includes a solder bump overlying and electrically connected to a pad region, and a metal cap layer formed on at least a portion of the solder bump. The metal cap layer has a melting temperature greater than the melting temperature of the solder bump. 1. A method of forming a packaging assembly , the method comprising disposing a bump structure between a semiconductor substrate and a package substrate , the bump structure electrically connecting the semiconductor substrate to the package substrate , wherein the bump structure comprises a solder bump and a metal cap layer covering at least a portion of the solder bump while a top portion of the solder bump remains exposed , and the metal cap layer has a melting temperature greater than a melting temperature of the solder bump.2. The method of claim 1 , wherein disposing the bump structure comprises the metal cap layer comprising at least one of nickel claim 1 , palladium and gold.3. The method of claim 2 , wherein disposing the bump structure further comprises the metal cap layer comprising copper.4. The method of claim 2 , wherein disposing the bump structure comprises the solder bump comprising a lead-free solder material.5. The method of claim 2 , further comprising forming the metal cap layer on a middle sidewall surface of the solder bump.6. The method of claim 2 , further comprising forming the metal cap layer on a lower sidewall surface of the solder bump and covering a bottom portion of the solder bump.7. A method of forming a semiconductor device claim 2 , the method comprising:forming a solder material layer over a semiconductor substrate, the solder material layer comprising a substantially homogenous material;forming a metal cap layer conformally over the solder material layer;removing a portion of the metal cap layer to expose at least a top portion of the solder material layer, while a remaining portion of the metal cap layer covers at least a portion of the solder material layer; ...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

A fin field effect transistor (FinFET) is provided. The FinFET includes a substrate, a gate stack, and a filter layer, and strain layers. The substrate has a semiconductor fin. The gate stack is disposed across the semiconductor fin. The gate stack includes a gate dielectric layer, a work function layer and a metal filling layer. The gate dielectric layer is disposed on the semiconductor fin. The work function layer is disposed on the gate dielectric layer. The metal filling layer is over the work function layer. The filter layer is disposed between the work function layer and the metal filling layer to prevent or decrease penetration of diffusion atoms. The strain layers are beside the gate stack. A material of the filter layer is different from a material of the work function layer and a material of the metal filling layer. 1. An n-type FinFET , comprising:a substrate having a semiconductor fin; a gate dielectric layer on the semiconductor fin;', 'a work function layer on the gate dielectric layer;', 'a metal filling layer over the work function layer; and', 'a filter layer between the work function layer and the metal filling layer to prevent or decrease penetration of diffusion atoms, wherein a material of the filter layer is different from a material of the work function layer and a material of the metal filling layer; and, 'a gate stack across the semiconductor fin, the gate stack comprisingstrain layers beside the gate stack.2. The n-type FinFET of claim 1 , wherein the material of the filter layer comprises a metal nitride or a composite containing metal nitride.3. The n-type FinFET of claim 2 , wherein the metal nitride comprises TiN claim 2 , and the composite containing metal nitride comprises TiN-SiNcomposite (TSN).4. The n-type FinFET of claim 1 , wherein the material of the filter layer is selected from a material such that a threshold voltage value of the n-type FinFET is decreased when a thickness of the filter layer is increased.5. The n-type FinFET ...

Laptop Computer for Processing Original High Resolution Images and Image-data-processing device thereof

An image-data-processing device for processing first image data includes an image processing chip with a first memory and a second memory. The image processing chip further includes a data managing unit and a coding module, wherein the memory space of the second memory is greater than the memory space of the first memory. The data managing unit receives the first image data from an image sensor and transmits the image data to the encoding module, wherein the encoding module generates a second image data based on the first image data received. The data managing unit then selectively stores the second image data in the first memory or the second memory.

Aminoglycosides: synthesis and use as antifungals

The present invention relates to novel aminoglycoside analogs having certain substituents at the 6 position of ring III which exhibit improved antifungal activity but possess minimal antibacterial properties. The compounds of the present invention are analogues of kanamycin A. Also provided are methods of synthesizing and methods of using the compounds of the present invention. The compounds of the present invention are useful in treating or preventing fungal disease.

Method and System for Operation of Memory System Having Multiple Storage Devices

Systems and methods for operation of a memory system are disclosed. In some example embodiments, a system for storing or retrieving data in response to one or more signals provided from one or more clients includes a plurality of memcached-type memory devices arranged in a cluster, and a proxy module configured to communicate at least indirectly with each of the memcached-type memory devices and further configured to receive the one or more signals. The proxy module is configured to perform a determination of how to proceed in communicating with the memcached-type memory devices for the purpose of the storing or retrieving of data at or from one or more of the memcached-type memory devices in response to the one or more signals. In additional example embodiments, the proxy module is a centralized proxy and makes selections among the memory devices based upon performing of a memcache selection/fail-over algorithm (MSFOA). 1. A system for storing or retrieving data in response to one or more signals provided from one or more client computer devices , the system comprising:a plurality of memcached-type memory devices arranged in a cluster; anda proxy module configured to communicate at least indirectly with each of the memcached-type memory devices and further configured to receive the one or more signals,wherein the proxy module is configured to perform a determination of how to proceed in communicating with the memcached-type memory devices for the purpose of the storing or retrieving of data at or from one or more of the memcached-type memory devices in response to the one or more signals.2. The system of claim 1 , wherein the proxy module includes a memory portion.3. The system of claim 1 , wherein the proxy module includes a consistent-hashing module that performs a consistent-hashing process.4. The system of claim 3 , wherein the proxy module makes at least an initial determination of which of the memcached-type memory devices should be contacted in relation to a ...

OVER-CURRENT PROTECTION SYSTEM OF AND METHOD THEREOF

An over-current protection system used in a computer system is disclosed. The computer system includes a current supply module, a processor, and a battery. The over-current protection system commands the processor to disable its boost state if a first current generated by the current supply module when the processor is in the boost state is greater than a second current affordable by the current supply module. 1. An over-current protection system applied for a computer system , wherein the computer system comprises a current supply module , a processor and a battery; the over-current protection system commands the processor to disable its boost state if a first current generated by the current supply module under a boost state enabled by the processor becomes greater than a second current affordable by the current supply module; the over-current protection system comprising:a charge module electrically connected to the current supply module for charging the battery, and the charge module comprises a detection element used for detecting the first current generated by the current supply module under the boost state, and if the first current becomes greater than the second current affordable by the current supply module, the charge module stops charging and generates a signal; anda protection circuit electrically connected to the charge module; when the processor enables the boost state such that the first current increases and becomes greater than the second current affordable by the current supply module, the protection circuit will transmit the signal generated by the charge module to the processor, to command the processor to disable the boost state.2. The over-current protection system as claimed in claim 1 , further comprising a control module electrically connected to the charge module and the processor claim 1 , and the control module used for transmitting the signal to the processor claim 1 , to command the processor to disable the boost state.3. The over- ...

MESO-BILIVERDIN COMPOSITIONS AND METHODS

Methods and materials for producing meso-biliverdin are provided where the methods include reacting phycocyanobilin with an amphoteric compound in a solvent to yield meso-biliverdin. 1. A method of producing meso-biliverdin , the method comprising:reacting phycocyanobilin with an amphoteric compound to yield meso-biliverdin.2. The method of claim 1 , wherein the meso-biliverdin comprises meso-biliverdin IXα.3. The method of claim 1 , wherein the meso-biliverdin consists of meso-biliverdin IXα.4. The method of claim 1 , wherein the amphoteric compound is selected from the group consisting of sodium bicarbonate claim 1 , potassium carbonate claim 1 , and sodium carbonate.5. The method of claim 1 , wherein the amphoteric compound comprises sodium bicarbonate or potassium carbonate.6. The method of claim 1 , wherein the phycocyanobilin is reacted with the amphoteric compound in ethanol or tert-butanol.7. The method of claim 5 , wherein the phycocyanobilin is reacted with the sodium bicarbonate or the potassium carbonate in ethanol.8. The method of claim 1 , wherein the amphoteric compound is present in from 1 to 5 folds in weight compared to the phycocyanobilin by weight.9. The method of claim 1 , wherein the amphoteric compound is present in from 2 to 4 folds in weight compared to the phycocyanobilin by weight.10. The method of claim 1 , the method further comprising culturing cyanobacteria claim 1 , rhodophyte claim 1 , cryptophyte claim 1 , or mixture thereof to yield the phycocyanobilin to be reacted with the amphoteric compound.11. The method of claim 10 , wherein the cyanobacteria claim 10 , rhodophyte claim 10 , cryptophyte claim 10 , or mixture thereof are cultured in a culture media comprising waste water.12. A method of producing meso-biliverdin claim 10 , the method comprising:extracting phycocyanobilin from cyanobacteria, rhodophyte, cryptophyte, or mixture thereof; andisomerizing the extracted phycocyanobilin to form meso-biliverdin.13. The method of claim ...

Circuit Board Circuit Apparatus and Light Source Apparatus

A circuit board circuit apparatus and a light source apparatus including a substrate, a circuit layer, and at least one electronic component are disclosed. The circuit layer is formed on a surface of the substrate. The circuit layer includes a first circuit and a second circuit which are coplanar-disposed. The at least one electronic component is disposed on the circuit layer and connected with the circuit layer. Each electronic component has a first contact and a second contact. At least a part of the second circuit is disposed between the at least one electronic component and the first circuit. The at least one electronic component crosses over the second circuit, so that the second circuit penetrates through the bottom of the electronic component between the first contact and the second contact. 2. The circuit board circuit apparatus of claim 1 , wherein a first channel region is formed between at least a part of the first circuit and a first side of the at least one electronic component claim 1 , the second circuit passes the first channel region in and out from a second side of the electronic component opposite to the first side by passing under the electronic component forming the first channel region.3. The circuit board circuit apparatus of claim 2 , wherein the second circuit passes the first channel region in and out from the second side of the electronic component by passing between the two adjacent electronic components forming the first channel region.4. The circuit board circuit apparatus of claim 2 , wherein the first circuit connects with the first contact of the electronic component forming the first channel region to form a closed end of the first channel region.5. The circuit board circuit apparatus of claim 4 , wherein the first circuit connects with the first contact of another electronic component forming the first channel region to form another closed end of the first channel region claim 4 , two ends of the second circuit passes the first ...

LIGHT-EMITTING DIODE MODULE

An LED module includes a single-sided circuit board, a plurality of LED strings and signal wires. The single-sided circuit board has a surface defined with a first and second areas. A long edge of the surface has a wiring outlet located at a position corresponding to a boundary of the first and second areas. The LED strings are divided into a first and second groups disposed in the first and second areas, respectively. The signal wires each are disposed on the surface and routed to have its one end joined to the wiring outlet, and its another end electrically connected to a first end of one LED string or a second end of one LED string. In addition, some signal wires each are further routed to have a segment thereof passed through a gap formed between the two groups of LED strings. 1. A light-emitting diode module , comprising:a single-sided circuit board having a surface, the surface having a first long edge and a second long edge, and the surface being defined with a first area and a second area, the first long edge having a wiring outlet at a position corresponding to a boundary of the first and second areas;a plurality of light-emitting diode (LED) strings divided into a first LED-string group and a second LED-string group, the first and second LED-string groups being disposed in the first and second areas, respectively; anda plurality of signal wires disposed on the surface and routed to have their one ends joined to the wiring outlet, the signal wires being divided into a first wire group and a second wire group by the boundary of the first and second areas, a first signal wire in the first wire group being routed to have its another end electrically connected to one end of each LED string in the first LED-string group, the remaining signal wires in the first wire group being routed to have their another ends electrically connected to another ends of the LED strings in the first LED-string group respectively, a second signal wire in the second wire group being ...

Semiconductor Device And Bump Formation Process

A semiconductor device includes a solder bump overlying and electrically connected to a pad region, and a metal cap layer formed on at least a portion of the solder bump. The metal cap layer has a melting temperature greater than the melting temperature of the solder bump. 1. A semiconductor device , comprising:a semiconductor substrate;a pad region on the semiconductor substrate;a solder bump overlying and connected to the pad region; anda metal cap layer formed over at least a portion of the solder bump while exposing a top portion of the solder bump;wherein the metal cap layer has a melting temperature greater than a melting temperature of the solder bump.2. The semiconductor device of claim 1 , wherein the metal cap layer comprises nickel.3. The semiconductor device of claim 1 , wherein the metal cap layer comprises palladium.4. The semiconductor device of claim 1 , wherein the metal cap layer comprises gold.5. The semiconductor device of claim 1 , wherein the metal cap layer comprises copper.6. The semiconductor device of claim 1 , wherein the solder bump comprise a lead-free solder material.7. The semiconductor device of claim 1 , wherein the metal cap layer is formed on a middle sidewall surface of the solder bump.8. The semiconductor device of claim 7 , wherein the solder bump comprises a bottom portion that laterally spreads outside the metal cap layer.9. The semiconductor device of claim 1 , wherein the metal cap layer is formed on a lower sidewall surface of the solder bump and extends to a bottom portion of the solder bump.10. A packaging assembly claim 1 , comprising:a semiconductor substrate;a package substrate; anda bump structure disposed between and electrically connecting the semiconductor substrate and the package substrate;wherein the bump structure comprises a solder bump and a metal cap layer covering at least a portion of the solder bump while a top portion of the solder bump remains exposed, and the metal cap layer has a melting temperature ...

SOLDER BUMP STRETCHING METHOD

A method includes heating a solder bump above a melting temperature of the solder bump. The solder bump is stretched to increase a height of the solder bump. The solder bump is cooled down. 1. A method , comprising:heating a solder bump above a melting temperature of the solder bump;stretching the solder bump to increase a height of the solder bump; andcooling down the solder bump.2. The method of claim 1 , further comprising bonding a top holder to a top die above the solder bump.3. The method of claim 2 , wherein bonding the top holder is achieved by vacuum suction.4. The method of claim 2 , wherein heating the solder bump is performed by using a heat element in the top holder.5. The method of claim 4 , wherein the heat element comprises an electrical wire.6. The method of claim 1 , further comprising bonding a bottom holder to a substrate below the solder bump.7. The method of claim 1 , wherein stretching the solder bump increases a grain orientation angle between a short crystal axis of a main element of the solder bump and a normal axis of a substrate below the solder bump.8. The method of claim 7 , wherein the main element is Sn.9. The method of claim 7 , wherein the angle is above 50°.10. The method of claim 1 , wherein the heating is above 300° C.11. The method of claim 1 , wherein a ratio of a center width of the solder bump over a top contact width of the solder bump is from 0.6 to 1.0 after the stretching.12. The method of claim 1 , wherein the solder bump has an increased portion of a lamellar structure after the stretching.13. A method claim 1 , comprising:bonding a top holder to a top die having a solder bump;heating a solder bump above a melting temperature of the solder bump;stretching the solder bump to increase a height of the solder bump in order to increases a grain orientation angle between a short crystal axis of a main element of the solder bump and a normal axis of a substrate below the solder bump; andcooling down the solder bump.14. The ...

Therapeutic Compositions and Associated Methods

Methods and materials for treating various diseases and medical conditions with meso-biliverdin compositions. In addition methods and materials for producing meso-biliverdin are provided where the methods include reacting phycocyanobilin with an amphoteric compound in a solvent to yield meso-biliverdin are provided. 1. A pharmaceutical composition , comprising meso-biliverdin IXα.2. The pharmaceutical composition of claim 1 , further comprising a pharmaceutically acceptable carrier.3. The pharmaceutical composition of claim 1 , wherein the pharmaceutical composition further comprises one or more other pharmacuetically effective compositions selected from the group consisting of antibiotics claim 1 , antifungals claim 1 , antivirals claim 1 , anti-inflammatories claim 1 , analgesics claim 1 , antipyretics claim 1 , antiseptics claim 1 , antihistamines claim 1 , anti-allergics claim 1 , anesthetics claim 1 , and vaccines.4. A method of treating inflammation in a patient claim 1 , the method comprising administering a pharmaceutical composition comprising meso-biliverdin IXα to the patient in an amount effective to reduce inflammation.5. The method of claim 4 , wherein the pharmaceutical composition further comprises a pharmaceutically acceptable carrier.6. The method of claim 4 , wherein the pharmaceutical composition further comprises one or more other pharmacuetically effective compositions selected from the group consisting of antibiotics claim 4 , antifungals claim 4 , antivirals claim 4 , anti-inflammatories claim 4 , analgesics claim 4 , antipyretics claim 4 , antiseptics claim 4 , antihistamines claim 4 , anti-allergics claim 4 , anesthetics claim 4 , and vaccines.7. The method of claim 4 , wherein the inflammation results from a disease type selected from the group consisting of autoimmune diseases claim 4 , inflammatory diseases claim 4 , infectious diseases claim 4 , renal diseases claim 4 , hepatobiliary diseases claim 4 , heart diseases claim 4 , ...

Photolithography Method and Photolithography System

A photolithography method includes dispensing a first liquid onto a first target layer formed over a first wafer through a nozzle at a first distance from the first target layer; capturing an image of the first liquid on the first target layer; patterning the first target layer after capturing the image of the first liquid; comparing the captured image of the first liquid to a first reference image to generate a first comparison result; responsive to the first comparison result, positioning the nozzle and a second wafer such that the nozzle is at a second distance from a second target layer on the second wafer; dispensing a second liquid onto the second target layer formed over the second wafer through the nozzle at the second distance from the second target layer; and patterning the second target layer after dispensing the second liquid. 1. A photolithography method , comprising:dispensing a first liquid onto a first target layer formed over a first wafer through a nozzle at a first distance from the first target layer;capturing an image of the first liquid on the first target layer;patterning the first target layer after capturing the image of the first liquid;comparing the captured image of the first liquid to a first reference image to generate a first comparison result;responsive to the first comparison result, positioning the nozzle relative to a second wafer such that the nozzle is at a second distance from a second target layer on the second wafer wherein the second distance is different from the first distance;dispensing a second liquid onto the second target layer formed over the second wafer through the nozzle at the second distance from the second target layer; andpatterning the second target layer after dispensing the second liquid.2. The photolithography method of claim 1 , wherein capturing the image of the first liquid is performed during dispensing of the first liquid.3. (canceled)4. The photolithography method of claim 1 , further comprising:curing ...

Dispensing Nozzle Design and Dispensing Method Thereof

An apparatus for dispensing fluid includes a fluid source; a nozzle having an inner layer and an outer layer, the inner layer defining a bore in fluid communication with the fluid source; and a plurality of pins each moveable to be in physical contact with the outer layer, wherein the plurality of pins is operable to apply a force towards the outer layer to adjust a cross-section of the bore. 1. An apparatus for dispensing fluid , comprising:a fluid source;a nozzle having an inner layer and an outer layer, the inner layer defining a bore in fluid communication with the fluid source; anda plurality of pins each moveable to be in physical contact with the outer layer, wherein the plurality of pins is operable to apply a force towards the outer layer to adjust a cross-section of the bore.2. The apparatus of claim 1 , wherein each of the plurality of pins is moveable in a direction perpendicular to a longitudinal axis of the bore.3. The apparatus of claim 1 , wherein each of the plurality of pins is movable by applying a gaseous pressure.4. The apparatus of claim 1 , wherein the inner and outer layers are made of elastic material.5. The apparatus of claim 4 , wherein the elastic material of the inner layer is more rigid than that of the outer layer.6. The apparatus of claim 1 , wherein the inner and outer layers form a cavity that can be inflated by pumping in gas.7. The apparatus of claim 1 , wherein the cross-section of the bore is adjustable to vary in shapes.8. The apparatus of claim 7 , wherein the shapes are selected from triangle claim 7 , rectangle claim 7 , square claim 7 , circle claim 7 , oval claim 7 , and polygon.9. The apparatus of claim 1 , wherein the cross-section of the bore is adjustable to vary in cross-sectional areas along a longitudinal axis of the bore.10. The apparatus of claim 1 , further comprising:a gas outlet nozzle in a proximity region of an orifice of the nozzle, wherein the gas outlet nozzle is operable to increase an ambient pressure in ...

Conductive Feature Formation and Structure

Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In a method embodiment, a dielectric layer is formed on a semiconductor substrate. The semiconductor substrate has a source/drain region. An opening is formed through the dielectric layer to the source/drain region. A silicide region is formed on the source/drain region and a barrier layer is formed in the opening along sidewalls of the dielectric layer by a same Plasma-Enhance Chemical Vapor Deposition (PECVD) process. 1. A structure comprising:a substrate comprising an active area, the active area comprising a source/drain region;a dielectric layer over the substrate, the dielectric layer having a sidewall extending from a top surface of the dielectric layer to the source/drain region; and a silicide region on the source/drain region at the sidewall of the dielectric layer;', 'a barrier layer along the sidewall of the dielectric layer, wherein the barrier layer comprises chlorine; and', 'a conductive material on the barrier layer and above the silicide region, the barrier layer being disposed between the conductive material and the sidewall of the dielectric layer., 'a conductive feature contacting the source/drain region, the conductive feature comprising2. The structure of claim 1 , wherein a concentration of the chlorine in the barrier layer is in a range from 10cmto 10cm.3. The structure of claim 1 , wherein the barrier layer is titanium nitride that comprises chlorine.4. The structure of claim 3 , wherein the titanium nitride has a titanium concentration in a range from 10cmto 10cm claim 3 , and has a nitrogen concentration in a range from 10cmto 10cm.5. The structure of claim 3 , wherein the titanium nitride is TiN claim 3 , wherein x is in a range from 0.6 to 3.6. The structure of claim 3 , wherein the titanium nitride is TiN claim 3 , wherein x is in a range from 0.4 to ...

METHOD OF COUNTING SHEET MATERIALS

A method of counting sheet materials applied to a pile of sheet materials, comprising the steps of: receiving an image of the pile of sheet materials; obtaining a grayscale value of a plurality of pixels along a first image axis direction of the image to form an one dimensional first array; performing binarization of the first elements of the first array with a first threshold value to form an one dimensional second array; obtaining the number of the second elements of a first value appearing between two second elements of a second value in the second array to form a third array; dividing the elements of the third array into a first cluster and a second cluster with a second threshold value; counting the number of the third elements belonging to the first cluster and defining said number as the number of the first sheet materials. 1. A method of counting sheet materials , which is applied to a pile of sheet materials comprising a plurality of first sheet materials and a plurality of second sheet materials , which are staggeringly arranged along an axial direction , wherein each of the second sheet materials is adjacent to each of the first sheet materials , and a thickness of each of the first sheet materials is greater than a thickness of each of the second sheet materials; the method of counting sheet materials is performed by an image processing module , comprising the steps of:A. receiving an image of the pile of sheet materials;B. obtaining a plurality of grayscale values of a plurality of pixels along a first image axial direction corresponding to the axial direction of the image, to form a first array which is one-dimensional, wherein the first array comprises a plurality of first elements; values of the plurality of first elements are the grayscale values respectively;C. performing binarization of the first elements of the first array with a first threshold value to form a second array which is one-dimensional, wherein the second array comprises a plurality ...

ELECTRONIC DEVICE AND BIOLOGICAL MONITORING METHOD USING THE SAME

An electronic device is disclosed. The electronic device includes a wireless module configured to emit a first radar signal and receive a second radar signal, which is the first radar signal reflected by a user; a gravity sensor configured to sense a status of the electronic device to generate a sensing result; and a control unit coupled to the wireless module and the gravity sensor, and configured to control the wireless module to emit the first radar signal when the sensing result conforms to an emitting condition and determine a physiological status of the user according to the second radar signal received by the wireless module. 1. An electronic device , comprising:a wireless module configured to emit a first radar signal and receive a second radar signal, which is the first radar signal reflected by a user;a gravity sensor configured to sense a status of the electronic device to generate a sensing result; anda control unit coupled to the wireless module and the gravity sensor, and configured to control the wireless module to emit the first radar signal when the sensing result conforms to an emitting condition and determine a physiological status of the user according to the second radar signal received by the wireless module.2. The electronic device of claim 1 , wherein the physiological status of the user is related to a heartbeat frequency or an electrocardiogram of the user.3. The electronic device of claim 1 , wherein the emitting condition is satisfied when the electronic device is stationary.4. The electronic device of claim 1 , wherein the control unit transmits the received second radar signal to a host system via analog-to-digital conversion to determine the physiological status of the user.5. The electronic device of claim 4 , wherein the host system performs an identification verification for the user according to the physiological status of the user.6. The electronic device of claim 5 , wherein when the physiological status of the user is identical ...

Conductive Feature Formation and Structure

Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In a method embodiment, a dielectric layer is formed on a semiconductor substrate. The semiconductor substrate has a source/drain region. An opening is formed through the dielectric layer to the source/drain region. A silicide region is formed on the source/drain region and a barrier layer is formed in the opening along sidewalls of the dielectric layer by a same Plasma-Enhance Chemical Vapor Deposition (PECVD) process.

METHOD OF OPERATING DRIPPAGE PREVENTION SYSTEM

A method of preventing drippage in a fluid dispensing system. The fluid dispensing system includes a first automatic control valve (ACV), an input of the first ACV connected to fluid-source of fluid, the first ACV having positions ranging from fully closed to fully open, and a second ACV, an input of the second ACV being connected to an output of the first ACV, and an output of the second ACV being connected to a nozzle, the second ACV having positions ranging from fully closed to fully open. The method includes generating a first proxy signal representing at least a first indirect measure of a position of the first ACV. The method includes recognizing, based on at least the first proxy signal that a failure state exists in which the first ACV has failed to close. The method includes causing the second ACV to close when the failure state exists. 1. A method of preventing drippage in a fluid dispensing system which has a first automatic control valve (ACV) , an input of the first ACV fluidically connected to fluid-source of fluid to be dispensed , the first ACV having positions ranging from fully closed to fully open , and a second ACV , an input of the second ACV being fluidically connected to an output of the first ACV , and an output of the second ACV being fluidically connected to a nozzle , the second ACV having positions ranging from fully closed to fully open , the method comprising:generating at least a first proxy signal representing at least a first indirect measure of a position of the first ACV,recognizing, based on at least the first proxy signal, that a failure state exists in which the first ACV has failed to close; andcausing the second ACV to close when the failure state exists.2. The method of claim 1 , wherein: 'generating a first pressure signal representing air pressure at a first port of the first ACV; and', 'the generating at least a first proxy signal includesthe first proxy signal is the first pressure signal.3. The method of claim 2 , ...

Dual Side Contact Structures in Semiconductor Devices

A semiconductor device with dual side source/drain (S/D) contact structures and methods of fabricating the same are disclosed. The semiconductor device includes first and second S/D regions, a nanostructured channel region disposed between the first and second S/D regions, a gate structure surrounding the nanostructured channel region, first and second contact structures disposed on first surfaces of the first and second S/D regions, a third contact structure disposed on a second surface of the first S/D region, and an etch stop layer disposed on a second surface of the second S/D region. The third contact structure includes a metal silicide layer, a silicide nitride layer disposed on the metal silicide layer, and a conductive layer disposed on the silicide nitride layer.

COMMON RAIL CONTACT

A method according to the present disclosure includes receiving a workpiece including a gate structure, a first source/drain (S/D) feature, a second S/D feature, a first dielectric layer over the gate structure, the first S/D feature, the second S/D feature, a first S/D contact over the first S/D feature, a second S/D contact over the second S/D feature, a first etch stop layer (ESL) over the first dielectric layer, and a second dielectric layer over the first ESL, forming a S/D contact via through the second dielectric layer and the first ESL to couple to the first S/D contact, forming a gate contact opening through the second dielectric layer, the first ESL, and the first dielectric layer to expose the gate structure, and forming a common rail opening adjoining the gate contact opening to expose the second S/D contact, and forming a common rail contact in the common rail opening. 1. A method , comprising: a gate structure,', 'a first source/drain feature and a second source/drain feature,', 'a first dielectric layer over the gate structure, the first source/drain feature and the second source/drain feature,', 'a first source/drain contact disposed over the first source/drain feature,', 'a second source/drain contact disposed over the second source/drain feature,', 'a first etch stop layer (ESL) over the first dielectric layer, and', 'a second dielectric layer over the first ESL;, 'receiving a workpiece comprisingforming a source/drain contact via through the second dielectric layer and the first ESL to couple to the first source/drain contact;after the forming of the source/drain contact via, forming a gate contact opening through the second dielectric layer, the first ESL, and the first dielectric layer to expose the gate structure;after the forming of the gate contact opening, forming a common rail opening adjoining the gate contact opening, wherein the second source/drain contact is exposed in the common rail opening; andafter the forming the common rail ...

HINGE MECHANISM, ELECTRONIC DEVICE AND METHOD CAPABLE OF AUTOMATICALLY EXECUTING ANGLE ROTATION

An electronic device has a method capable of automatically executing angle rotation. A second body is rotatably connected to a first body of the electronic device. A hinge mechanism is disposed between the first body and the second body. The hinge mechanism includes a hinge component, a motor unit, a coupling component and an angle detecting unit. The first body and the second body are connected to the hinge component. The motor unit is electrically connected to a controller of the electronic device. The coupling component is connected between the hinge component and the motor unit. The angle detecting unit is connected to the hinge component or the coupling component to read its rotary angle. The controller drives the motor unit to rotate the hinge component via the coupling component, and the second body can be moved relative to the first body and be fixed at a predetermined position. 1. A hinge mechanism capable of automatically executing angle rotation , comprising:a rotation axle;a first connecting component rotatably connected to the rotation axle;a second connecting component fixed to the rotation axle;an angle detecting unit disposed on an end of the rotation axle and adapted to acquire a rotary angle of the rotation axle; anda motor unit connected to the rotation axle, the motor unit driving rotation of the rotation axle and the second connecting component in accordance with acquired information of the angle detecting unit.2. The hinge mechanism of claim 1 , further comprising:an axle coupling component connected between the rotation axle and the motor unit, the motor unit driving the rotation of the rotation axle and the second connecting component via the axle coupling component.3. The hinge mechanism of claim 1 , wherein an annular slot is formed on the rotation axle claim 1 , the annular slot is sheathed by the first connecting component claim 1 , and the second connecting component is engaged with the annular slot to be synchronously rotated in ...

Aminoglycosides, Methods of Synthesis, and Associated Applications

A fungicidal compound that includes an aminoglycoside, or salt thereof, having the formula: 2. The compound of claim 1 , wherein Rand Rare substituted with a group other than H claim 1 , and the group for Rand Ris the same group.3. The compound of claim 1 , wherein Rand Rcomprise a group selected from the group consisting of C(O)OR(alkoxycarbonyl) claim 1 , C(O)NHR(alkylaminocarbonyl) claim 1 , S(O)R(alkylsulfonyl) claim 1 , S(O)R(phenylsulfonyl) claim 1 , S(O)R(alkylsulfinyl) claim 1 , P(O)R(alkylphosphonyl) claim 1 , and C(O)R(alkanoyl).4. The compound of claim 1 , wherein:{'sup': '1', 'Ris H; and'}{'sup': '2', 'sub': 6', '9, 'Ris a Cto Cbranched or straight alkyl group.'}5. The compound of claim 1 , wherein:{'sup': '1', 'Ris H; and'}{'sup': '2', 'sub': 8', '17, 'Ris CH.'}6. The compound of claim 1 , wherein Rand Rare each a Cto Cbranched or straight alkyl group.7. The compound of claim 1 , wherein Rand Rare each CH.8. The compound of claim 1 , wherein Rand Rare each CH.9. The compound of claim 1 , wherein Rand Rare each CH.11Fusarium graminearum, Fusarium oxysporum, Fusarium culmorum, Aspergillus flavus, Aspergillus fumigatus, Aspergillus niger, Altenaria solani, Botrytis cinerea, Botrytis alcata, Phakapsora pachyrhizi, Candida albicans, Candida pseudotropicalis, Candida rugosa, Candida parapsilosis, Candida lusitaniae, Cryptococcus gattisCryptococcus neoformans.. The method of claim 10 , wherein the fungal infection to be treated is caused by an organism selected from the group consisting of and13. The compound of claim 12 , wherein Rand Rare substituted with a group other than H claim 12 , and the group for Rand Ris the same group.14. The compound of claim 12 , wherein Rand Rcomprise a group selected from the group consisting of C(O)OR(alkoxycarbonyl) claim 12 , C(O)NHR(alkylaminocarbonyl) claim 12 , S(O)R(alkylsulfonyl) claim 12 , S(O)R(phenylsulfonyl) claim 12 , S(O)R(alkylsulfinyl) claim 12 , P(O)R(alkylphosphonyl) claim 12 , and C(O)R(alkanoyl).15. The ...

CHEMICAL MECHANICAL POLISHING METHOD AND APPARATUS

A chemical mechanical polishing method includes holding a wafer in a carrier over a polishing pad, dispensing a first slurry comprising a plurality of first abrasive particles into the carrier, rotating at least one of the carrier and the polishing pad, halting the dispensing of the first slurry, and dispensing a second slurry into the carrier after halting the dispensing of the first slurry, wherein the second slurry comprises a plurality of second abrasive particles smaller than the first abrasive particles. 1. A chemical mechanical polishing (CMP) method , comprising:holding a wafer in a carrier over a polishing pad;dispensing a first slurry into the carrier, the first slurry comprising a plurality of first abrasive particles;rotating the carrier, the polishing pad or a combination thereof;halting the dispensing of the first slurry; anddispensing a second slurry into the carrier after halting the dispensing of the first slurry, wherein the second slurry comprises a plurality of second abrasive particles smaller than the first abrasive particles.2. The CMP method of claim 1 , wherein after halting the dispensing of the first slurry claim 1 , the rotation of the carrier claim 1 , the polishing pad or the combination thereof continues such that an interior of the carrier is free of the first slurry.3. The CMP method of claim 1 , further comprising:halting the rotation of the carrier, the polishing pad or the combination thereof prior to dispensing the second slurry.4. The CMP method of claim 3 , further comprising:detecting a pressure in the carrier during dispensing the second slurry;comparing the detected pressure to a predetermined pressure; andresuming the rotation of the carrier, the polishing pad or the combination thereof when the detected pressure is higher than or equal to the predetermined pressure.5. The CMP method of claim 3 , wherein halting the dispensing of the first slurry is performed prior to halting the rotation of the carrier claim 3 , the ...

RETICLE CLEANING SYSTEM AND METHOD FOR USING THE SAME

A method for cleaning a reticle includes rotating the reticle, providing a cleaning liquid to clean the reticle, detecting a static charge value on the reticle during rotating the reticle, and reducing static charges on the reticle in response to the detected static charge value. Hence, the electrostatic discharge (ESD) occurred to the reticle can be prevented. 1. A method for cleaning a reticle comprising:rotating the reticle;providing a cleaning liquid to clean the reticle;detecting a static charge value on the reticle during rotating the reticle; andreducing static charges on the reticle in response to the detected static charge value.2. The method of claim 1 , wherein reducing the static charges on the reticle comprises:providing ionized air molecules toward the reticle, wherein the ionized air molecules include positive air ions, negative air ions, or a combination thereof.3. The method of claim 2 , further comprising repeating detecting the static charge value on the reticle and reducing the static charges on the reticle in response to the detected static charge value.4. The method of claim 1 , wherein reducing the static charges on the reticle comprises:increasing a humidity of a casing accommodating the reticle.5. The method of claim 4 , further comprising:decreasing the humidity after reducing the static charges on the reticle.6. The method of claim 1 , further comprising:adjusting a humidity in a casing before rotating the reticle, wherein the casing accommodates the reticle.7. The method of claim 1 , further comprising:stopping rotating the reticle after reducing static charges on the reticle.8. The method of claim 7 , further comprising:stopping detecting the static charge value of the reticle after stopping rotating the reticle.9. A method for removing static charges on a reticle comprising:placing the reticle on a reticle holder in a casing;rotating the reticle by a spinner;detecting a static charge value of a top surface of the reticle by at least one ...

METHOD FOR PROVIDING DEIONIZED WATER WITH DYNAMIC ELECTRICAL RESISTIVITY

A method includes mixing a first deionized water (DI) water from a first pipe and a second DI water from a second pipe in a merging pipe that is in fluid communication with the first pipe and the second pipe. An electrical resistivity of the first DI water is different from an electrical resistivity of the second DI water. A mixture of the first DI water and the second DI water is applied from the merging pipe onto a wafer. 1. A method , comprising:mixing a first deionized water (DI) water from a first pipe and a second DI water from a second pipe in a merging pipe that is in fluid communication with the first pipe and the second pipe, wherein an electrical resistivity of the first DI water is different from an electrical resistivity of the second DI water; andapplying a mixture of the first DI water and the second DI water from the merging pipe onto a wafer.2. The method of claim 1 , further comprising:measuring an electrical resistivity of the mixture of the first DI water and the second DI water.3. The method of claim 2 , wherein the electrical resistivity of the mixture of the first DI water and the second DI water are measured in the merging pipe.4. The method of claim 2 , further comprising:adjusting a flow rate of the first DI water through the first pipe according to the measured electrical resistivity of the mixture of the first DI water and the second DI water.5. The method of claim 4 , further comprising:adjusting a flow rate of the second DI water through the second pipe according to the measured electrical resistivity of the mixture of the first DI water and the second DI water.6. The method of claim 1 , further comprising:mixing a third DI water from a third pipe with the first DI water and the second DI water.7. The method of claim 6 , wherein an electrical resistivity of the third DI water is different from the electrical resistivity of the first DI water and the electrical resistivity of the second DI water.8. A method claim 6 , comprising:mixing a ...

PORTABLE ELECTRONIC DEVICE AND METHOD OF CONTROLLING AN IMAGE OF A DISPLAY MODULE

A portable electronic device is provided and includes a first display module, a second display module, a keyboard device, a sensing unit and a control unit. The second display module is pivotally connected to the first display module. The sensing unit is configured to sense a position of the keyboard device relative to the second display module to output a sensing signal. The control unit is configured to control a displaying image of the second display module according to the sensing signal. 1. A portable electronic device , comprising:a first display module;a second display module, pivotally connected to the first display module;a keyboard device;a sensing unit, configured to sense a position of the keyboard device relative to the second display module so as to output a sensing signal; anda control unit, configured to control a displaying image of the second display module according to the sensing signal.2. The portable electronic device as claimed in claim 1 , wherein the second display module further comprises:a housing, having an inner side; anda sliding module, disposed within the housing, wherein the keyboard device is configured to drive the sliding module to move.3. The portable electronic device as claimed in claim 2 , wherein the sliding module comprises:a sliding track, disposed in the housing and being parallel to the inner side; anda sliding member, disposed on the sliding track, wherein the sliding member is configured to slide along the sliding track.4. The portable electronic device as claimed in claim 2 , wherein the second display module further comprises a positioning assembly configured to position the sliding module at different positions within the housing.5. The portable electronic device as claimed in claim 2 , further comprising a limiting structure configured to limit a relative position of the keyboard device and the sliding module.6. The portable electronic device as claimed in claim 5 , wherein the limiting structure comprises:a first ...

SUSTAINED RELEASE ORAL DOSAGE FORM CONTAINING DALFAMPRIDINE

The present invention provides a sustained release oral dosage form containing dalfampridine that can be administered once daily. The dosage form includes dalfampridine as the active pharmaceutical ingredient and the excipients comprising osmotic agents in a tablet core. The sustained release oral dosage form of the present invention can be administrated once daily and can provide a proper fluctuation index to reduce undesired adverse effect, prevent alcohol-induced dose dumping and release drug at a rate sufficient to maintain certain drug plasma concentration. 1. A sustained release oral dosage form comprising:a tablet core which has at least one compartment, said tablet core comprising dalfampridine, or a pharmaceutically acceptable salt thereof and the excipients comprising osmotic agents;a semipermeable membrane, said tablet core surrounded by said semipermeable membrane;at least one passageway through said semipermeable membrane to said tablet core, andwherein said dalfampridine to be delivered from said passageway.2. The sustained release oral dosage form according to claim 1 , wherein said tablet core comprising at least one drug compartment and at least one push compartment claim 1 , said drug compartment comprising said dalfampridine and said push compartment comprising at least one said osmotic agent which is selected from water-soluble salt claim 1 , hydrophilic polymer claim 1 , carbohydrate or water-soluble amino acid.3. The sustained release oral dosage form according to claim 1 , wherein said tablet core further comprising at least one expandable material.4. The sustained release oral dosage form according to claim 3 , wherein said expandable material is an osmopolymer.5. The sustained release oral dosage form according to claim 3 , wherein said expandable material is selected from the group consisting of poly(methyl methacrylate) claim 3 , microcrystalline cellulose claim 3 , methylcellulose claim 3 , hydroxypropyl cellulose claim 3 , hydroxypropyl ...

PIXEL STRUCTURE OF ELECTROLUMINESCENT DISPLAY PANEL AND METHOD OF FABRICATING THE SAME

A pixel structure of electroluminescent display panel includes a substrate, a display driving structure, a planarization structure and an electroluminescent device. The display driving structure is disposed on the substrate. The display driving structure includes a driving device. The planarization structure is disposed on the substrate. The planarization structure covers the top surface and the sidewall of the driving device, and the planarization structure has a contact hole partially exposing the driving device. The electroluminescent device is disposed on the planarization structure. The electroluminescent device includes an anode, a light-emitting layer and a cathode. The anode covers the top surface of the planarization structure and surrounds the sidewall of the planarization structure, and the anode is filled into the contact hole and electrically connected to the driving device. The light-emitting layer is disposed on the anode. The cathode is disposed on the light-emitting layer. 1. A pixel structure of an electroluminescent display panel , comprising:a substrate;a display driving structure disposed on the substrate, wherein the display driving structure comprises a driving device;a planarization structure disposed on the substrate, wherein the planarization structure covers a top surface of the driving device and a sidewall of the driving device, and the planarization structure has a contact hole exposing a portion of the driving device; and an anode covering a top surface of the planarization structure and surrounding a sidewall of the planarization structure, wherein the anode is filled into the contact hole and the anode is electrically connected to the driving device;', 'a light-emitting layer disposed on the anode; and', 'a cathode disposed on the light-emitting layer., 'an electroluminescent device disposed on the planarization structure, wherein the electroluminescent device comprises2. The pixel structure of the electroluminescent display panel ...

EXHAUST SYSTEM AND METHOD OF USING

A vortex generator including an annular bearing for mounting on an interior surface of an exhaust line. The vortex generator further includes an annular blade assembly mounted on the annular bearing. The annular blade assembly includes a leading face with an upstream opening having a first radius. The annular blade assembly further includes a trailing face with a downstream opening having a second radius, wherein the upstream opening and the downstream opening are centered around a longitudinal axis of the exhaust line, and the second radius is different from the first radius. The annular blade assembly further includes a side extending from the leading face to the trailing face, wherein the side has a plurality of openings, each opening of the plurality of openings containing a blade, and each opening of the plurality of openings extends beyond the annular bearing in a direction parallel to the longitudinal axis. 1. A vortex generator , comprising:an annular bearing for mounting on an interior surface of an exhaust line; and a leading face with an upstream opening having a first radius,', 'a trailing face with a downstream opening having a second radius, wherein the upstream opening and the downstream opening are centered around a longitudinal axis of the exhaust line, and the second radius is different from the first radius, and', 'a side extending from the leading face to the trailing face, wherein the side has a plurality of openings, each opening of the plurality of openings containing a blade, and each opening of the plurality of openings extends beyond the annular bearing in a direction parallel to the longitudinal axis., 'an annular blade assembly mounted on the annular bearing, wherein the annular blade assembly comprises2. The vortex generator of claim 1 , wherein the first radius is smaller than the second radius.3. The vortex generator of claim 1 , wherein a ratio of the first radius to the second radius ranges from 1:4.5 to 4:4.5.4. The vortex generator ...

Conductive Feature Formation and Structure

Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In a method embodiment, a dielectric layer is formed on a semiconductor substrate. The semiconductor substrate has a source/drain region. An opening is formed through the dielectric layer to the source/drain region. A silicide region is formed on the source/drain region and a barrier layer is formed in the opening along sidewalls of the dielectric layer by a same Plasma-Enhance Chemical Vapor Deposition (PECVD) process.

MIDDLE-OF-LINE INTERCONNECT STRUCTURE AND MANUFACTURING METHOD

In some embodiments, the present disclosure relates to an integrated circuit device. A transistor structure includes a gate electrode separated from a substrate by a gate dielectric and a pair of source/drain regions disposed within the substrate on opposite sides of the gate electrode. A lower conductive plug is disposed through a lower inter-layer dielectric (ILD) layer and contacting a first source/drain region. A capping layer is disposed directly on the lower conductive plug. An upper inter-layer dielectric (ILD) layer is disposed over the capping layer and the lower ILD layer. An upper conductive plug is disposed through the upper ILD layer and directly on the capping layer. 1. An integrated circuit device , comprising:a transistor structure including a pair of source/drain regions disposed on a substrate and a gate electrode between the pair of source/drain regions, the gate electrode being separated from the substrate by a gate dielectric;a lower conductive plug disposed through a lower inter-layer dielectric (ILD) layer and contacting a first source/drain region;a capping layer disposed directly on the lower conductive plug;an upper inter-layer dielectric (ILD) layer disposed over the capping layer and the lower ILD layer; andan upper conductive plug disposed through the upper ILD layer and directly on the capping layer.2. The integrated circuit device of claim 1 , wherein the capping layer comprises tungsten.3. The integrated circuit device of claim 1 , wherein the upper conductive plug comprises a metal core and an intermixing barrier layer lining an interface of the metal core and the upper ILD layer.4. The integrated circuit device of claim 3 , wherein the metal core comprises ruthenium; and wherein the intermixing barrier layer comprises ruthenium oxide.5. The integrated circuit device of claim 4 , wherein the intermixing barrier layer has a thickness in a range of from about 10 nm to about 15 nm.6. The integrated circuit device of claim 1 , wherein ...

ELECTRONIC DEVICE WITH IMAGE-CAPTURING FUNCTION

An electronic device with image-capturing functionality is provided. The electronic device includes a device housing, a module substrate, an image-capturing element, a switch unit and a control unit. The module substrate is adapted to be slid between a first substrate position and a second substrate position. The image-capturing element is disposed on the module substrate. The control unit is coupled to the image-capturing element and the switch unit. When the module substrate is in the first substrate position, the switch unit is activated, the switch unit sends a pressed signal, and the control unit deactivates the image-capturing element according to the pressed signal. When the module substrate is in the second substrate position, the switch unit is not activated, and the control unit activates the image-capturing element. The electronic device of the embodiment protects the privacy of the user. 1. An electronic device with an image-capturing function , comprising:a device housing, comprising a housing opening;a module substrate, slidably disposed in the device housing, wherein the module substrate is adapted to be slid between a first substrate position and a second substrate position;an image-capturing element, disposed on the module substrate;a switch unit; anda control unit, coupled to the image-capturing element and the switch unit, wherein when the module substrate is in the first substrate position, the switch unit is activated, the switch unit sends a pressed signal, and the control unit deactivates the image-capturing element according to the pressed signal, and when the module substrate is in the second substrate position, the switch unit is not activated, and the control unit activates the image-capturing element.2. The electronic device as claimed in claim 1 , further comprising a microphone claim 1 , wherein the microphone is disposed on the module substrate claim 1 , the microphone is coupled to the control unit claim 1 , and when the module ...

METHOD FOR FORMING PHOTORESIST LAYER

A method for forming a photoresist layer includes the following steps. A first photoresist layer is formed on a first wafer provided on a platen. The platen includes a plurality of temperature zones being at a first set of process temperatures. A first etching process is performed on the first wafer to form a first patterned metal layer. A profile variation of the first patterned metal layer with respect to a reference profile is determined. The first set of process temperatures is adjusted to a second set of process temperatures according to the profile variation. A second photoresist layer is formed on a second wafer provided on the platen with the temperature zones being at the second set of process temperatures respectively. 1. A method for forming a photoresist layer , comprising:forming a first photoresist layer on a first wafer provided on a platen, wherein the platen comprises a plurality of temperature zones being at a first set of process temperatures;performing a first etching process on the first wafer to form a first patterned metal layer;determining a profile variation of the first patterned metal layer with respect to a reference profile;adjusting the first set of process temperatures to a second set of process temperatures according to the profile variation;forming a second photoresist layer on a second wafer provided on the platen with the temperature zones being at the second set of process temperatures respectively.2. The method for forming the photoresist layer as claimed in claim 1 , wherein forming the second photoresist layer on the second wafer comprises:forming a first photoresist coating on the second wafer, wherein the first photoresist coating has a first temperature; andforming a second photoresist coating on the second wafer, wherein the second photoresist coating has a second temperature different from the first temperature, the first photoresist coating and the second photoresist coating form the second photoresist layer having a ...

METHOD AND DEVICE FOR PROXIMITY-BASED REDIRECTION OF DATA ASSOCIATED WITH WEB TRAFFIC

A mobile device performs a method for proximity-based redirection of data associated with web traffic. The method includes detecting a beacon signal from an external device when in proximity to the external device. The beacon signal contains a resource locator. The method also includes using the resource locator to redirect, to a redirecting device, data associated with web traffic requested by the mobile device from a website. The method further includes discontinuing the redirecting of the data associated with the web traffic when the beacon signal is no longer detected. 1. A method performed by a mobile device for proximity-based redirection of data associated with web traffic , the method comprising:detecting a first beacon signal from a first external device when in proximity to the first external device, wherein the first beacon signal contains a first resource locator;using the first resource locator to redirect, to a first redirecting device, data associated with web traffic requested by the mobile device from a website;discontinuing the redirecting of the data associated with the web traffic when the first beacon signal is no longer detected.2. The method of claim 1 , wherein the web traffic itself is redirected without first going through the mobile device.3. The method of claim 2 , wherein the first resource locator is used for configuring a first proxy setting of the mobile device to redirect the web traffic to the first redirecting device without first going through the mobile device.4. The method of claim 3 , wherein the web traffic is redirected to the first external device claim 3 , which functions as the first redirecting device.5. The method of claim 3 , wherein the web traffic is redirected to a second external device associated with the first external device claim 3 , wherein the second external device functions as the first redirecting device.6. The method of claim 3 , wherein the first resource locator is used to retrieve a proxy auto- ...

Amphiphilic aminoglycoside connexin hemichannel inhibitors

The present invention includes novel molecules and methods of using an amphiphilic kanamycin molecule having substitutions at the O-4″, O-6″, or O-4″ and O-6″ positions having reduced antimicrobial activity for targeting Connexin Hemichannels.

Semiconductor Device and Bump Formation Process

A semiconductor device includes a solder bump overlying and electrically connected to a pad region, and a metal cap layer formed on at least a portion of the solder bump. The metal cap layer has a melting temperature greater than the melting temperature of the solder bump.

EXHAUST SYSTEM AND METHOD OF USING

A vortex generator for an exhaust system includes an annular bearing for mounting on an interior surface of an exhaust line. The vortex generator further includes a flow splitter mounted on the annular bearing. The flow splitter includes a leading face with an upstream opening. The flow splitter further includes a trailing face with a downstream opening, wherein the upstream opening and the downstream opening are centered around a longitudinal axis of the exhaust line. The flow splitter further includes a side extending from the leading face to the trailing face, wherein the side has a plurality of openings, each opening of the plurality of openings containing a blade, and wherein a trailing side of each blade faces the longitudinal axis. 1. A vortex generator for an exhaust system , comprising:an annular bearing for mounting on an interior surface of an exhaust line; and a leading face with an upstream opening,', 'a trailing face with a downstream opening, wherein the upstream opening and the downstream opening are centered around a longitudinal axis of the exhaust line, and', 'a side extending from the leading face to the trailing face, wherein the side has a plurality of openings, each opening of the plurality of openings containing a blade, and wherein a trailing side of each blade faces the longitudinal axis., 'an annular blade assembly mounted on the annular bearing, wherein the annular blade assembly comprises2. The vortex generator of claim 1 , wherein the annular bearing has a rotatable interior portion.3. The vortex generator of claim 2 , wherein the trailing face is mounted on a leading face of the rotatable interior portion.4. The vortex generator of claim 2 , wherein the side is mounted on an interior wall of the rotatable interior portion.5. The vortex generator of claim 1 , wherein each blade contained in the plurality of openings is a flat blade.6. The vortex generator of claim 1 , wherein each blade contained in the plurality of openings is a curved ...

Contact Structure and Method of Fabricating the Same

A method includes forming a first transistor and a second transistor over a substrate, wherein the first transistor and the second transistor share a drain/source region formed between a first gate of the first transistor and a second gate of the second transistor, forming a first opening in an interlayer dielectric layer and between the first gate and the second gate, depositing an etch stop layer in the first opening and on a top surface of the interlayer dielectric layer, depositing a dielectric layer over the etch stop layer, applying a first etching process to the dielectric layer until the etch stop layer is exposed, performing a second etching process on the etch stop layer until an exposed portion of the etch stop layer and portions of the dielectric layer have been removed. 1. A method comprising:forming a first transistor and a second transistor over a substrate, wherein the first transistor and the second transistor share a drain/source region formed between a first gate of the first transistor and a second gate of the second transistor;forming a first opening in an interlayer dielectric layer and between the first gate and the second gate;depositing an etch stop layer in the first opening and on a top surface of the interlayer dielectric layer;depositing a dielectric layer over the etch stop layer;depositing a photoresist layer on the dielectric layer;patterning the photoresist layer to form a second opening in the photoresist layer, wherein an outermost edge of the second opening is aligned with an outermost edge of the first opening;applying a first etching process to the dielectric layer until the etch stop layer is exposed;performing a second etching process on the etch stop layer until an exposed portion of the etch stop layer and portions of the dielectric layer have been removed to form a third opening, wherein a maximum width of the third opening is greater than a maximum width of the second opening; andfilling the third opening with a conductive ...

Semiconductor Device and Method of Forming Thereof

A method of forming a semiconductor device includes forming a first conductive feature on a bottom surface of an opening through a dielectric layer. The forming the first conductive feature leaves seeds on sidewalls of the opening. A treatment process is performed on the seeds to form treated seeds. The treated seeds are removed with a cleaning process. The cleaning process may include a rinse with deionized water. A second conductive feature is formed to fill the opening. 1. A method of forming a semiconductor device , the method comprising:forming a first conductive feature on a bottom surface of an opening through a dielectric layer, the forming the first conductive feature leaving seeds on sidewalls of the opening;performing a treatment process on the seeds to form treated seeds;removing the treated seeds with a cleaning process; andforming a second conductive feature to fill the opening.2. The method of claim 1 , wherein the cleaning process comprises a rinse with deionized water.3. The method of claim 2 , wherein the cleaning process further comprises a rinse with isopropyl alcohol after the rinse with deionized water.4. The method of claim 1 , wherein the treatment process comprises an oxidation.5. The method of claim 1 , wherein the forming the first conductive feature comprises a fluorine free tungsten deposition.6. The method of claim 1 , wherein the forming the second conductive feature comprises using a fluorine-comprising precursor.7. The method of claim 1 , further comprising forming a third conductive feature claim 1 , the opening extending to a top surface of the third conductive feature claim 1 , the first conductive feature and the third conductive feature being the same material.8. A method of forming a semiconductor device claim 1 , the method comprising:forming a first conductive feature on a gate electrode;forming a dielectric layer over the first conductive feature;etching an opening extending through the dielectric layer to expose the first ...

Drainage for Temperature Humidity Controlling System

A drainage device includes a tank, a pipe and an air duct. The tank has a base plate and at least one first wall. The first wall is disposed on the base plate. The base plate and the first wall define a space. The pipe defines a channel. The pipe connects with the base plate. The channel communicates with the space. The air duct is disposed partially in the space and partially in the channel. There exists at least one gap between an outer surface of the air duct and an inner surface of the pipe.

Aminoglycoside and Azole Compositions and Methods

The present invention relates to novel fungicidal compound including an aminoglycoside analog having certain substituents at the 6 position of ring III that exhibit improved antifungal activity but possess minimal antibacterial properties in combination with fungicidal azoles. The aminoglycoside compounds are analogues of kanamycin A. Also provided are methods of synthesizing and methods of using the compounds of the present invention. The compounds of the present invention are useful in treating or preventing fungal disease.

CONDUCTIVE FEATURE FORMATION AND STRUCTURE

Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In a method embodiment, a dielectric layer is formed on a semiconductor substrate. The semiconductor substrate has a source/drain region. An opening is formed through the dielectric layer to the source/drain region. A silicide region is formed on the source/drain region and a barrier layer is formed in the opening along sidewalls of the dielectric layer by a same Plasma-Enhance Chemical Vapor Deposition (PECVD) process. 1. A method of manufacturing a conductive structure comprising:forming a dielectric layer on a semiconductor substrate, the semiconductor substrate having a source/drain region;forming an opening through the dielectric layer to the source/drain region; andby a same Plasma-Enhance Chemical Vapor Deposition (PECVD) process, forming a silicide region on the source/drain region and a barrier layer in the opening along sidewalls of the dielectric layer.2. The method of claim 1 , wherein the PECVD process includes a mixture of gas comprising titanium tetrachloride (TiCl) claim 1 , hydrogen (H) claim 1 , and ammonia (NH).3. The method of claim 2 , wherein the barrier layer includes titanium nitride comprising residual chlorine claim 2 , and wherein the silicide region includes titanium silicide.4. The method of claim 2 , wherein:the PECVD process includes gaseous reactions and surface reactions;{'sub': 'x', 'the gaseous reactions produce titanium chloride (TiCl);'}{'sub': 'x', 'the surface reactions include first reactions that react at least some of the titanium chloride (TiCl) with at least some of silicon of the source/drain region to form the silicide region; and'}{'sub': x', '2', '3, 'the surface reactions include second reactions that react at least some of the titanium chloride (TiCl) with at least some of the hydrogen (H) to produce titanium (Ti), and include ...

TILED DEVICE AND ELECTRONIC DEVICE

An electronic device includes a flexible substrate and a conductive wire. The flexible substrate includes a first bending region and a side region connected to the first bending region. The conductive wire is disposed on the flexible substrate and includes a metal portion and a plurality of openings disposed in the metal portion. A ratio of a total width of the metal portion disposed in the first bending region to a total width of the metal portion disposed in the side region is in a range from 0.8 to 1.2, and a length of one of the openings in the first bending region is less than or equal to a length of one of the openings in the side region. 1. A tiled device , comprising: a flexible substrate, comprising a first bending region and a side region connected to the first bending region; and', 'a conductive wire, disposed on the flexible substrate and comprising a metal portion and a plurality of openings disposed in the metal portion,, 'a plurality of displays, each of the displays comprisingwherein a ratio of a total width of the metal portion disposed in the first bending region to a total width of the metal portion disposed in the side region is in a range from 0.8 to 1.2.2. The tiled device according to claim 1 , wherein a length of one of the plurality of openings in the first bending region is less than or equal to a length of one of the plurality of openings in the side region.3. The tiled device according to claim 2 , wherein a ratio of the length of the one of the plurality of openings in the first bending region to the length of the one of the plurality of openings in the side region is less than or equal to 0.9.4. The tiled device according to claim 1 , wherein one of the plurality of openings in the first bending region comprises a first included angle claim 1 , one of the plurality of openings in the side region comprises a second included angle claim 1 , and a ratio of the first included angle to the second included angle is less than or equal to 0.9.5 ...

Dispensing Nozzle Design and Dispensing Method Thereof

A method of dispensing a fluid in a semiconductor manufacturing process includes providing a substrate, positioning a nozzle above the substrate, and determining a cross-sectional shape of the nozzle. The method also includes configuring the nozzle to have the determined cross-sectional shape and applying the fluid to the substrate through the nozzle with the determined cross-sectional shape. 1. A method of dispensing a fluid in a semiconductor manufacturing process , comprising:providing a substrate;positioning a nozzle above the substrate;determining a cross-sectional shape of the nozzle;configuring the nozzle to have the determined cross-sectional shape; andapplying the fluid to the substrate through the nozzle with the determined cross-sectional shape.2. The method of claim 1 , further comprising:determining a different cross-sectional shape of the nozzle; andconfiguring the nozzle to have the determined different cross-sectional shape during the applying of the fluid to the substrate.3. The method of claim 1 , wherein the configuring of the nozzle includes forming a tapered sidewall along a longitudinal axis of the nozzle.4. The method of claim 1 , wherein the fluid is a photo resist material.5. The method of claim 1 , wherein the configuring of the nozzle to have the determined cross-sectional shape includes moving a plurality of pins in pressing an outer surface of the nozzle.6. The method of claim 5 , wherein the moving of the plurality of pins includes horizontally moving the plurality of pins.7. The method of claim 5 , wherein the moving of the plurality of pins includes applying a gaseous pressure towards the plurality of pins.8. The method of claim 1 , further comprising:adjusting an ambient pressure in a proximate region of the nozzle during the applying of the fluid to the substrate.9. The method of claim 8 , wherein the adjusting of the ambient pressure is through a gas sprayer positioned in the proximate region of the nozzle.10. The method of claim 8 ...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

A semiconductor device includes a gate electrode, a source/drain structure, a lower contact contacting either of the gate electrode or the source/drain structure, and an upper contact disposed in an opening formed in an interlayer dielectric (ILD) layer and in direct contact with the lower contact. The upper contact is in direct contact with the ILD layer without an interposing conductive barrier layer, and the upper contact includes ruthenium. 1. A method of manufacturing a semiconductor device , the method comprising:forming a source/drain structure over a substrate;forming a first interlayer dielectric (ILD) layer including one or more first insulating layers over the source/drain structure;forming a first opening in the first ILD layer to at least partially expose the source/drain structure;filling the first opening with a first conductive material to form a source/drain contact in contact with the source/drain structure;forming a second ILD layer including a first layer and a second layer disposed on the first layer over the source/drain contact and the first ILD layer;forming a second opening in the second ILD layer to at least partially expose the source/drain contact; andfilling the second opening with a second conductive material to form an upper contact in direct contact with the source/drain contact and in direct contact with the second ILD layer without an interposing conductive barrier layer,wherein the second conductive material includes ruthenium.2. The method of claim 1 , wherein the upper contact includes an impurity other than ruthenium.3. The method of claim 2 , wherein an amount of impurity is in a range from 0.00001 atomic % to 0.1 atomic %.4. The method of claim 2 , wherein the impurity is one or more selected from the group consisting of alkaline metals and alkaline earth metals.5. The method of claim 2 , wherein the impurity is carbon.6. The method of claim 1 , wherein the first conductive material is Co.7. The method of claim 6 , wherein a ...

APPARATUS AND METHODS FOR EXHAUST CLEANING

Embodiments of the present disclosure relate to apparatus and methods for cleaning an exhaust path of a semiconductor process tool. One embodiment provides an exhaust pipe section and a pipe cleaning assembly connected between a semiconductor process tool and a factory exhaust. The pipe cleaning assembly includes a residue remover disposed in the exhaust pipe section. The residue remover is operable to move in the exhaust pipe section to dislodge accumulated materials from an inner surface of the exhaust pipe section. 1. A method of semiconductor processing , comprising:flowing an exhaust through an exhaust pipe;activating a residue remover disposed in the exhaust pipe;passing the exhaust through a gas-liquid separator connected to the residue remover downstream from the residue remover and upstream from a factory exhaust, the gas-liquid separator including a first pipe section including a first port passing through a side of the first pipe section for exhausting gas from the first pipe section;contacting the exhaust with a first deflector above the first port and extending from the side of the first pipe section above the first port;contacting the exhaust with a second deflector below the first port and extending from the side of the first pipe section below the first port; andcontacting the exhaust with a third deflector between the first deflector and the second deflector and extending from the side of the first pipe section.2. The method of claim 1 , wherein monitoring the accumulated material comprises monitoring measurement of an optical sensor.3. The method of claim 1 , wherein activating the residue remover comprises driving the residue remover back and forth in the exhaust pipe using an actuator.4. An exhaust assembly for a semiconductor process tool claim 1 , comprising:an exhaust pipe section;a residue remover disposed in the exhaust pipe section, wherein the residue remover is operable to move in the exhaust pipe section;a gas-liquid separator connected ...

Reticle cleaning system

A reticle cleaning system includes a casing, a reticle holder, and a static charge reducing device. The reticle holder is in the casing and configured to hold a reticle. The static charge reducing device is above the reticle holder and includes a fluid generator, an ionizer, and a static charge sensor. The fluid generator is configured to control a humidity condition in the casing. The ionizer is configured to provide ionized air molecules to the reticle. The static charge sensor is configured to detect a static charge value on the reticle, wherein the ionizer is between the fluid generator and the static charge sensor.

ANTENNA STRUCTURE AND MOBILE DEVICE

An antenna structure includes a metal mechanism element, a ground element, a feeding radiation element, a coupling element, a dielectric substrate, and a switchable circuit. The metal mechanism element has a slot. The feeding radiation element extends across the slot. A coupling gap is formed between the feeding radiation element and the coupling element. The feeding radiation element and the coupling element are disposed on the dielectric substrate. The switchable circuit includes a first metal element, a second metal element, a reactance element, a capacitor, and a diode. The first metal element is coupled to the coupling element. The reactance element is embedded in the first metal element. The second metal element is coupled through the capacitor to the ground element. The diode is coupled between the first metal element and the second metal element. The diode is turned on or off according to the control voltage difference. 1. An antenna structure , comprising:a metal mechanism element, having a slot;a ground element, coupled to the metal mechanism element;a feeding radiation element, coupled to a signal source, wherein the feeding radiation element extends across the slot;a coupling element, disposed adjacent to the feeding radiation element, wherein a coupling gap is formed between the feeding radiation element and the coupling element;a dielectric substrate, wherein the feeding radiation element and the coupling element are disposed on the dielectric substrate; and a first metal element, coupled to the coupling element;', 'a reactance element, embedded in the first metal element;', 'a second metal element;', 'a capacitor, wherein the second metal element is coupled through the capacitor to the ground element; and', 'a diode, coupled between the first metal element and the second metal element, wherein the diode is turned on or turned off according to a control voltage difference., 'a switchable circuit, comprising2. The antenna structure as claimed in claim 1 ...

Amphiphilic Kanamycin Compositions and Methods

The present relates to novel bioactive amphiphilic kanamycin compounds having the general formula of:where R may be a C4 to C20 branched or straight chained alkyl group or a substituted or unsubstituted aryl group. Also provided are methods of synthesizing and methods of using the compounds of the present invention. The compounds of the present invention are useful in treating and preventing various fungal and bacterial diseases.

Apparatus and methods for exhaust cleaning

Embodiments of the present disclosure relate to apparatus and methods for cleaning an exhaust path of a semiconductor process tool. One embodiment provides an exhaust pipe section and a pipe cleaning assembly connected between a semiconductor process tool and a factory exhaust. The pipe cleaning assembly includes a residue remover disposed in the exhaust pipe section. The residue remover is operable to move in the exhaust pipe section to dislodge accumulated materials from an inner surface of the exhaust pipe section.

TEMPERATURE CONTROLLING APPARATUS AND METHOD FOR FORMING COATING LAYER

A temperature controlling apparatus includes a platen, a fluid source, a chiller, a first conduit and a second conduit. The fluid source supplies a fluid. The chiller is coupled to the fluid source to cool the fluid in the fluid source to a cooling temperature. The first conduit includes a first inlet in communication with the fluid source, a first outlet and a first heater that heats the fluid from the cooling temperature to a first heating temperature. The fluid heated by the first heater is dispensed on the platen through the first outlet. The second conduit includes a second inlet in communication with the fluid source, a second outlet and a second heater that heats the fluid from the cooling temperature to a second heating temperature different from the first heating temperature. The fluid heated by the second heater is dispensed on the platen through the second outlet. 1. A temperature controlling apparatus , comprising:a platen;a fluid source that supplies a fluid;a chiller coupled to the fluid source to cool the fluid in the fluid source to a cooling temperature;a first conduit comprising a first inlet in fluid communication with the fluid source, a first outlet and a first heater configured to heat the fluid from the cooling temperature to a first heating temperature, wherein the fluid heated by the first heater is dispensed on the platen through the first outlet and the first heating temperature is substantially higher than the cooling temperature; anda second conduit comprising a second inlet in fluid communication with the fluid source, a second outlet and a second heater configured to heat the fluid from the cooling temperature to a second heating temperature different from the first heating temperature and substantially higher than the cooling temperature, wherein the fluid heated by the second heater is dispensed on the platen through the second outlet.2. The temperature controlling apparatus as claimed in claim 1 , wherein the first heater comprises ...

Semiconductor Device And Bump Formation Process

A semiconductor device includes a solder bump overlying and electrically connected to a pad region, and a metal cap layer formed on at least a portion of the solder bump. The metal cap layer has a melting temperature greater than the melting temperature of the solder bump. 1. A method of forming a packaging assembly , the method comprising:forming a solder material layer over a pad region of a first substrate;reshaping the solder material layer;forming a metal cap layer over the solder material layer, the metal cap layer being formed of a material different from the solder material layer; andbonding the solder material layer to a second substrate.2. The method of claim 1 , wherein forming the solder material layer comprises:forming a patterned mask layer over the first substrate, an opening in the patterned mask layer exposing the pad region;forming a solder material in the opening of the patterned mask layer; andremoving the patterned mask layer.3. The method of claim 2 , wherein forming the solder material layer further comprises:forming an under-bump-metallurgy (UBM) layer over the first substrate and over the pad region before forming the patterned mask layer; andremoving portions of the UBM layer uncovered by the solder material layer after removing the patterned mask layer.4. The method of claim 1 , wherein reshaping the solder material layer comprises performing a thermal reflow process.5. The method of claim 4 , wherein the solder material layer has straight sidewalls before the reshaping claim 4 , and wherein the solder material layer has curved sidewalls after the reshaping.6. The method of claim 1 , wherein forming the metal cap layer is performed before reshaping the solder material layer.7. The method of claim 1 , wherein reshaping the solder material layer changes a profile of the metal cap layer.8. The method of claim 1 , wherein the metal cap layer has a higher melting point than the solder material layer.9. The method of claim 1 , wherein the metal ...

Temperature controlling apparatus

A temperature controlling apparatus includes a platen, a fluid source that supplies a fluid, a first conduit, a second conduit, and a plurality of outlet thermal sensors. The first conduit includes a first inlet, a first outlet, and a first heater configured to heat the fluid to a first heating temperature. The fluid having the first heating temperature is dispensed on the platen through the first outlet. The second conduit includes a second inlet, a second outlet and a second heater configured to heat the fluid to a second heating temperature different from the first heating temperature. The fluid having the second heating temperature is dispensed on the platen through the second outlet. The outlet thermal sensors are disposed at the first outlet and the second outlet to sense temperature of the fluid dispensed from the first outlet and the second outlet respectively.

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

A semiconductor device includes a substrate, a first transistor, and a second transistor. The first transistor is disposed on the substrate within a first region and includes a first gate electrode. The first gate electrode includes a first filter layer between and in contact with a first conductive layer and a second conductive layer. The second transistor is disposed on the substrate within a second region and includes a second gate electrode. The second gate electrode includes a second filter layer between and in contact with a third conductive layer and a fourth conductive layer. The first transistor and the second transistor have a same conductive type, a first threshold voltage of the first transistor is lower than a second threshold voltage of the second transistor, and a first thickness of the first filter layer is larger than a second thickness of the second filter layer. 1. A semiconductor device , comprising:a substrate; 'a first gate electrode, comprising a first filter layer between and in contact with a first conductive layer and a second conductive layer; and', 'a first transistor, disposed on the substrate within a first region, comprising 'a second gate electrode, comprising a second filter layer between and in contact with a third conductive layer and a fourth conductive layer,', 'a second transistor, disposed on the substrate within a second region, comprisingwherein the first transistor and the second transistor have a same conductive type, a first threshold voltage of the first transistor is lower than a second threshold voltage of the second transistor, and a first thickness of the first filter layer is larger than a second thickness of the second filter layer.2. The semiconductor device of claim 1 , wherein the first filter layer claim 1 , the first conductive layer claim 1 , the second filter layer and the third conductive layer comprise a same material.3. The semiconductor device of claim 1 , wherein the first filter layer and the second ...

Radio-Frequency Transceiver Device Capable of Reducing Specific Absorption Rate

A radio-frequency transceiver device capable of reducing a specific absorption rate (SAR) includes an antenna including a radiating element and a grounding element, wherein the radiating element substantially extends along a first direction on a first plane; and a SAR suppression unit, substantially extending along the first direction and an edge of the radiating element of the antenna on the first plane and apart from the edge of the radiating element by a gap, for reducing the SAR of the antenna. 1. A radio-frequency (RF) transceiver device , capable of reducing a specific absorption rate (SAR) , comprising:an antenna, comprising a radiating element and a grounding element, wherein the radiating element substantially extends along a first direction on a first plane; anda SAR suppression unit, substantially extending along the first direction and an edge of the radiating element of the antenna on the first plane and apart from the edge of the radiating element by a gap, for reducing the SAR of the antenna.2. The RF transceiver device of claim 1 , wherein the SAR suppression unit is a conductive unit.3. The RF transceiver device of claim 1 , wherein the antenna operates in a plurality of bands claim 1 , and the SAR suppression unit is utilized for reducing SAR values of the antenna in the plurality of bands.4. The RF transceiver device of claim 3 , wherein a length of the SAR suppression unit is substantially related to a quarter of wavelength corresponding to a lowest band within the plurality of bands.5. The RF transceiver device of claim 1 , wherein the gap between the SAR suppression unit and the edge of the radiating element is substantially between 0.1 mm and 10 mm.6. The RF transceiver device of claim 1 , wherein a width of the SAR suppression unit on the first plane is substantially greater than 0.1 mm.7. The RF transceiver device of claim 1 , wherein the SAR suppression unit is disposed on the first plane.8. The RF transceiver device of claim 1 , wherein ...

DISPLAY

In a backlight module of a display, a plurality of optical films has positioning protrusions disposed in a positioning slot of a plastic frame for correct installation of the optical films on a light guide plate. One or more middle optical films further include a fixing protrusion at the side corresponding to the light source and an existing opening formed by bending a system bracket out of a holder is provided for placement of the fixing protrusion of the middle optical films. A double-sided adhesive tape disposed between a display panel and the holder is further utilized for securing the fixing protrusion such that the middle optical films can be securely fixed and not falling apart during an impact test or a falling test. 1. A display , comprising:a display panel; and a light guide plate having a light source side;', 'a light source disposed along the light source side of the light guide plate;', a bottom plate, on which the light source and the light guide plate are disposed;', 'a side plate connected to the bottom plate and facing the light source side of the light guide plate;', 'a top plate connected to the side plate and disposed corresponding to the bottom plate, wherein the top plate, the side plate, and the bottom plate form a containing room where the light source and the light source side of the light guide plate are contained therein, and the top plate has an opening; and', 'a system bracket connected to the side plate and corresponding to the opening, the system bracket extending toward a direction away from the light guide plate; and, 'a holder comprising, 'a first optical film disposed between the display panel and the light guide plate, the first optical film comprising a fixing protrusion disposed in the opening of the top plate., 'a backlight module, wherein the display panel is disposed thereon, the backlight module comprising2. The display of claim 1 , wherein the system bracket is formed by bending a portion of the top plate toward the ...

Photolithography Method and Photolithography System

A photolithography method includes dispensing a first liquid onto a first target layer formed over a first wafer through a nozzle at a first distance from the first target layer; capturing an image of the first liquid on the first target layer; patterning the first target layer after capturing the image of the first liquid; comparing the captured image of the first liquid to a first reference image to generate a first comparison result; responsive to the first comparison result, positioning the nozzle and a second wafer such that the nozzle is at a second distance from a second target layer on the second wafer; dispensing a second liquid onto the second target layer formed over the second wafer through the nozzle at the second distance from the second target layer; and patterning the second target layer after dispensing the second liquid.

Selective formation of titanium silicide and titanium nitride by hydrogen gas control

The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.

SYSTEM AND METHOD FOR PROVIDING DEIONIZED WATER WITH DYNAMIC ELECTRICAL RESISTIVITY

A system for providing deionized (DI) water with a dynamic electrical resistivity is provided. The system includes plural DI water sources, source pipes, flow control devices, a merging pipe and a flow controller. The DI water sources respectively have different electrical resistivities. The source pipes are respectively connected to the DI water sources in a one-to-one manner. The flow control devices are respectively disposed in the source pipes in a one-to-one manner. The merging pipe joins the source pipes. The flow controller includes a resistivity sensor disposed in the merging pipe, and the flow controller is configured to control a flowrate of the DI water through the source pipes. 1. A system for providing deionized (DI) water with a dynamic electrical resistivity , the system comprising:a plurality of DI water sources respectively having different electrical resistivities;a plurality of source pipes respectively connected to the DI water sources in a one-to-one manner;a plurality of flow control devices respectively disposed in the source pipes in a one-to-one manner;a merging pipe joining the source pipes; anda flow controller configured to control a flowrate of the DI water through the source pipes, wherein the flow controller comprises a resistivity sensor disposed in the merging pipe.2. The system of claim 1 , wherein the flow control devices are dampers or flow control valves claim 1 , and each of the dampers has a rotating angle in a range substantially from 0° to 90° claim 1 , and at least one of the rotating angles is not 0°.3. The system of claim 2 , wherein the flow controller comprises:a driving module configured to control the rotating angles of the dampers; anda judging module configured to compare an actual electrical resistivity of the DI water in the merging pipe with a target electrical resistivity.4. The system of claim 3 , further comprising a calculating module signally connected to the driving module claim 3 , wherein the calculating ...

Contact Structure and Method of Fabricating the Same

An apparatus includes a first source and a common drain and on opposite sides of a first gate surrounded by a first gate spacer, a second source and the common drain on opposite sides of a second gate surrounded by a second gate spacer, a first protection layer formed along a sidewall of the first gate spacer, wherein a top surface of the first protection layer has a first slope, a second protection layer formed along a sidewall of the second gate spacer, wherein a top surface of the second protection layer has a second slope, a lower drain contact between the first gate and the second gate and an upper drain contact over the lower drain contact and between the first gate and the second gate, wherein at least a portion of the upper drain contact is in contact with the first slope and the second slope. 1. An apparatus comprising:a first source and a common drain in a substrate and on opposite sides of a first gate, the first gate being surrounded by a first gate spacer;a second source and the common drain in the substrate and on opposite sides of a second gate, the second gate being surrounded by a second gate spacer;a first protection layer formed along a sidewall of the first gate spacer, wherein a top surface of the first protection layer has a first slope;a second protection layer formed along a sidewall of the second gate spacer, wherein a top surface of the second protection layer has a second slope;a lower drain contact between the first gate and the second gate; andan upper drain contact over the lower drain contact and between the first gate and the second gate, wherein at least a portion of the upper drain contact is in contact with the first slope and the second slope.2. The apparatus of claim 1 , wherein:the lower drain contact has an inverted-trapezoidal shape.3. The apparatus of claim 1 , wherein:a sidewall of the first protection layer is vertically aligned with a first sidewall of the common drain.4. The apparatus of claim 1 , wherein:a sidewall of ...

QUANTUM DOT NANOCRYSTAL STRUCTURE

A quantum dot nanocrystal structure includes: a core of a compound M1A1, wherein M1 is a metal selected from Zn, Sn, Pb, Cd, In, Ga, Ge, Mn, Co, Fe, Al, Mg, Ca, Sr, Ba, Ni, Ag, Ti and Cu, and A1 is an element selected from Se, S, Te, P, As, N, I, and O; an inner shell having a composition containing a compound M1M2A1A2, wherein M2 is a metal selected from Zn, Sn, Pb, Cd, In, Ga, Ge, Mn, Co, Fe, Al, Mg, Ca, Sr, Ba, Ni, Ag, Ti and Cu, A2 is an element selected from Se, S, Te, P, As, N, I and O; and a multi-pod-structured outer shell of a compound M1A2 or M2A2 enclosing the inner shell and having a base portion and protrusion portions extending from the base portion. 1. A quantum dot nanocrystal structure comprising:a core of a compound M1A1, wherein M1 is a metal selected from the group consisting of Zn, Sn, Pb, Cd, In, Ga, Ge, Mn, Co, Fe, Al, Mg, Ca, Sr, Ba, Ni, Ag, Ti and Cu, and A1 is an element selected from the group consisting of Se, S, Te, P, As, N, I, and O;{'sub': x', '1-x', 'y', '1-y, 'an inner shell enclosing said core and having a composition containing a compound M1M2A1A2, wherein M2 is different from M1 and is a metal selected from the group consisting of Zn, Sn, Pb, Cd, In, Ga, Ge, Mn, Co, Fe, Al, Mg, Ca, Sr, Ba, Ni, Ag, Ti and Cu, A2 is different from A1 and is an element selected from the group consisting of Se, S, Te, P, As, N, I and O, 0 Подробнее

ORTHODONTIC ALIGNER, ASSEMBLY AND METHOD FOR MANUFACTURING THEREOF

This present invention provides an orthodontic aligner installed on a user's teeth which includes a target tooth and an anchor tooth, the orthodontic aligner comprising a shell having a space constructed by receding of the shell, and a recess formed by recessing from one side of edge of the shell, and an extension formed by protruding from another side of edge of the shell, wherein the recess is located corresponding to position of the target tooth and the extension portion is located corresponding to position of the anchor tooth. This present invention also provides an orthodontic aligner assembly and manufacturing method therefor. So, only the target tooth needs to be moved will be moved during orthodontic treatment processes which can reduce sequels and the target tooth could make a predictable and long distance movement because of the recess without changing aligner frequently. 1. An orthodontic aligner placed on a user's teeth which include a target tooth and an anchor tooth , the orthodontic aligner comprising:a shell having a space constructed by the receding of the shell, and a recess constructed through recessing from an edge of the shell at the location corresponding to the target tooth, and an extension portion protruding from the same side of the edge of the shell at the location corresponding to the anchor tooth.2. The orthodontic aligner of claim 1 , wherein the shell is made by one or more of the following materials: PET claim 1 , PET-G claim 1 , TPU-PET-G claim 1 , PE claim 1 , EVA claim 1 , PC or PVC.3. The orthodontic aligner of claim 1 , wherein the thickness of the shell is between 0.25 to 0.6 inches.4. The orthodontic aligner of claim 1 , wherein the shell has a wall where the recess formed and a vertical distance between the wall and the top of crown of the target tooth is about 2 to 4 mm.5. The orthodontic aligner of claim 1 , wherein the shell has a wall where the recess formed claim 1 , and the section around the wall forms a moving track.6. ...

DRIPPAGE PREVENTION SYSTEM AND METHOD OF OPERATING SAME

A drippage prevention system including: a first automatic control valve (ACV), an input of the first ACV fluidically connected to a source of fluid to be dispensed, the first ACV having a position ranging from fully closed to fully open; a second ACV, an input of the second ACV being fluidically connected to the output of the first ACV, and an output of the second ACV being fluidically connected to a nozzle, the second ACV having positions ranging from fully closed to fully open; a proxy sensor configured to generate a proxy signal representing an indirect measure of a position of the first ACV; and a controller electrically connected to the first and second ACVs and the proxy sensor, the controller being configured to cause the second ACV to close based on the proxy signal and thereby stop flow of the liquid to the nozzle. 1. A drippage prevention system comprising:a first automatic control valve (ACV), an input of the first ACV fluidically connected to a fluid-source of fluid to be dispensed, the first ACV having positions ranging from fully closed to fully open;a second ACV, an input of the second ACV being fluidically connected to an output of the first ACV, and an output of the second ACV being fluidically connected to a nozzle, the second ACV having positions ranging from fully closed to fully open;a proxy sensor configured to generate a proxy signal representing an indirect measure of a position of the first ACV; anda controller electrically connected to the first and second ACVs and electrically connected to the proxy sensor, the controller being configured to cause the second ACV to close based on the proxy signal and thereby stop flow of liquid to the nozzle.2. The system of claim 1 , wherein:the first ACV is a pneumatically-controlled valve configured to be biased by a spring to a fully closed position in a non-actuated state;the first ACV has a first port on a side opposite the spring; 'a current (I) to pressure (P) converter (I/P converter) electrically ...

APPARATUS AND METHODS FOR EXHAUST CLEANING

Embodiments of the present disclosure relate to apparatus and methods for cleaning an exhaust path of a semiconductor process tool. One embodiment provides an exhaust pipe section and a pipe cleaning assembly connected between a semiconductor process tool and a factory exhaust. The pipe cleaning assembly includes a residue remover disposed in the exhaust pipe section. The residue remover is operable to move in the exhaust pipe section to dislodge accumulated materials from an inner surface of the exhaust pipe section. 1. A method of semiconductor processing , comprising:flowing an exhaust through an exhaust pipe;monitoring accumulated material in the exhaust pipe; andactivating a residue remover disposed in the exhaust pipe section to remove accumulated materials from the exhaust pipe; andflowing the exhaust through a gas-liquid separator connected downstream from the residue remover.2. The method of claim 1 , further comprising dispensing a cleaning agent in the exhaust pipe prior to activating the residue remover.3. The method of claim 2 , further comprising soaking the exhaust pipe in the cleaning agent after dispensing the cleaning agent.4. The method of claim 1 , wherein monitoring the accumulated material comprises monitoring measurement of an optical sensor.5. The method of claim 1 , wherein activating the residue remover comprises driving the residue remover back and forth in the exhaust pipe using an actuator.6. The method of claim 1 , further comprising:directing a liquid portion in the exhaust to a drain.7. An exhaust assembly for a semiconductor process tool claim 1 , comprising:an exhaust pipe section;a sensor positioned to detect accumulated materials in the exhaust pipe section;a dispenser positioned to dispense a cleaning agent in the exhaust pipe section; anda residue remover disposed in the exhaust pipe section, wherein the residue remover is operable to move in the exhaust pipe section to dislodge accumulated materials from an inner surface of the ...

SELECTIVE FORMATION OF TITANIUM SILICIDE AND TITANIUM NITRIDE BY HYDROGEN GAS CONTROL

The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow. 1. A method for fabricating a semiconductor structure , the method comprising:forming a fin with a source/drain (S/D) region on a substrate;forming a gate structure over the fin;forming an insulating structure on the gate structure;forming a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process comprising a first hydrogen gas flow; andforming a titanium nitride layer over the insulating structure with a second CVD process comprising a second hydrogen gas flow,wherein the first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.2. The method of claim 1 , wherein the forming the titanium silicide layer comprises:depositing a first titanium layer over the S/D region using the first hydrogen gas flow; andconverting a portion of the first titanium layer to the titanium silicide layer using the first hydrogen gas flow.3. The method of claim 2 , wherein the forming the titanium nitride layer comprises:depositing a second titanium layer over a sidewall of the insulating structure using the second hydrogen gas flow; andconverting a portion of the second titanium layer to the ...

Contact Structure and Method of Fabricating the Same

An apparatus includes a first source and a common drain and on opposite sides of a first gate surrounded by a first gate spacer, a second source and the common drain on opposite sides of a second gate surrounded by a second gate spacer, a first protection layer formed along a sidewall of the first gate spacer, wherein a top surface of the first protection layer has a first slope, a second protection layer formed along a sidewall of the second gate spacer, wherein a top surface of the second protection layer has a second slope, a lower drain contact between the first gate and the second gate and an upper drain contact over the lower drain contact and between the first gate and the second gate, wherein at least a portion of the upper drain contact is in contact with the first slope and the second slope. 1. A method comprising:forming a first dielectric layer over a substrate;forming a first opening in the first dielectric layer to expose a conductive feature;depositing an etch stop layer in the first opening and on a top surface of the first dielectric layer;depositing a second dielectric layer over the etch stop layer;depositing a photoresist layer on the second dielectric layer;patterning the photoresist layer to form a second opening in the photoresist layer;applying a first etching process to the second dielectric layer to form a third opening in the second dielectric layer, the third opening exposing the etch stop layer;performing a second etching process on the etch stop layer to form a fourth opening, the fourth opening exposing the conductive feature, a width of the fourth opening in the second dielectric layer being greater than a width of the third opening in the second dielectric layer; andfilling the fourth opening with a conductive material.2. The method of claim 1 , wherein the conductive feature comprises a source/drain contact.3. The method of claim 2 , wherein the source/drain contact is interposed between a first gate electrode and a second gate ...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

A semiconductor device includes a gate electrode, a source/drain structure, a lower contact contacting either of the gate electrode or the source/drain structure, and an upper contact disposed in an opening formed in an interlayer dielectric (ILD) layer and in direct contact with the lower contact. The upper contact is in direct contact with the ILD layer without an interposing conductive barrier layer, and the upper contact includes ruthenium. 1. A semiconductor device comprising:a gate electrode;a source/drain structure;a lower contact contacting either of the gate electrode or the source/drain structure; andan upper contact disposed in an opening formed in an interlayer dielectric (ILD) layer and being in direct contact with the lower contact;wherein the upper contact is in direct contact with the ILD layer without interposing a conductive barrier layer, andthe upper contact includes ruthenium.2. The semiconductor device of claim 1 , wherein the upper contact includes an impurity other than ruthenium.3. The semiconductor device of claim 2 , wherein an amount of impurity is in a range from 0.00001 atomic % to 0.1 atomic %.4. The semiconductor device of claim 2 , wherein the impurity is one or more selected from the group consisting of alkaline metals and alkaline earth metals.5. The semiconductor device of claim 2 , wherein the impurity is carbon.6. The semiconductor device of claim 1 , wherein the lower contact contacts the source/drain structure claim 1 , is disposed in an opening formed in one or more insulating material layers claim 1 , and includes Co.7. The semiconductor device of claim 6 , wherein the lower contact includes a conductive liner layer disposed between a Co layer and the one or more insulating material layer.8. The semiconductor device of claim 7 , wherein the conductive liner layers is made of one or more of Ti claim 7 , TiN claim 7 , Ta and TaN.9. A semiconductor device comprising:a gate electrode;a source/drain structure;a lower contact ...

CONDUCTIVE STRUCTURES AND METHODS OF FORMATION

A titanium precursor is used to selectively form a titanium silicide (TiSi) layer in a semiconductor device. A plasma-based deposition operation is performed in which the titanium precursor is provided into an opening, and a reactant gas and a plasma are used to cause silicon to diffuse to a top surface of a transistor structure. The diffusion of silicon results in the formation of a silicon-rich surface of the transistor structure, which increases the selectivity of the titanium silicide formation relative to other materials of the semiconductor device. The titanium precursor reacts with the silicon-rich surface to form the titanium silicide layer. The selective titanium silicide layer formation results in the formation of a titanium silicon nitride (TiSiN) on the sidewalls in the opening, which enables a conductive structure such as a metal source/drain contact to be formed in the opening without the addition of another barrier layer.

Liquid crystal display device

A liquid crystal display device includes a light guide plate, a light source module, a first tape, a circuit board holder and an elastic support piece, an optical film, a panel, and an elastic buffer piece. By implement of the liquid crystal display device of this invention, the thickness and the weight of the liquid crystal display device can be reduced.

Exhaust system and method of using

A vortex generator including an annular bearing for mounting on an interior surface of an exhaust line. The vortex generator further includes an annular blade assembly mounted on the annular bearing. The annular blade assembly includes a leading face with an upstream opening having a first radius. The annular blade assembly further includes a trailing face with a downstream opening having a second radius, wherein the upstream opening and the downstream opening are centered around a longitudinal axis of the exhaust line, and the second radius is different from the first radius. The annular blade assembly further includes a side extending from the leading face to the trailing face, wherein the side has a plurality of openings, each opening of the plurality of openings containing a blade, and each opening of the plurality of openings extends beyond the annular bearing in a direction parallel to the longitudinal axis.

System and method for providing deionized water with dynamic electrical resistivity

A system for providing deionized (DI) water with a dynamic electrical resistivity is provided. The system includes plural DI water sources, source pipes, flow control devices, a merging pipe and a flow controller. The DI water sources respectively have different electrical resistivities. The source pipes are respectively connected to the DI water sources in a one-to-one manner. The flow control devices are respectively disposed in the source pipes in a one-to-one manner. The merging pipe joins the source pipes. The flow controller includes a resistivity sensor disposed in the merging pipe, and the flow controller is configured to control a flowrate of the DI water through the source pipes.

Support mechanism for slide assembly

A slide assembly includes a first rail (10), a second rail (12), an engaging member (14) and a resilient member (16). The first rail (10) includes an extension wall (34) and the second rail (12) is slidably connected to the first rail (10), and has a passage (40). The engaging member (14) is pivotably connected to the second rail (12), and has a first end (46) and a second end (48). The first end (46) includes a stop (50). The resilient member (16) is connected between the second end (48) of the engaging member (14) and the second rail (12) so as to provide a resilient force to the engaging member (14) so that the stop (50) of the first end (46) of the engaging member (14) is inserted into the passage (40) of the second rail (12) by the resilient force from the resilient member (16). The stop (50) is longitudinally located corresponding to the extension wall (34) of the first rail (10). When the second rail (12) is slid to a pre-set position relative to the first rail (10), the stop (50) of the engaging member (14) contacts the extension wall (34) of the first rail (10) to form a stop point.

Support rail assembly with security mechanism

Anthraquinone Analogs

Anthraquinone analogs, methods for synthesizing anthraquinone analogs, and methods for inhibiting growth of one or more types of cells using anthraquinone analogs. Anthraquinone analogs can be synsthesized according to methods described herein. Optionally, the synthesis methods described herein include choosing an appropriate leaving group for selectively producing 1-alkyl-1H-naphtho[2,3-d]triazole-4,9-diones or 2-alkyl-2H-naphtho[2,3-d]triazole-4,9-diones. Anthraquinone analogs can include various functional groups that affect their ability to inhibit the growth of various cell types. For example, some anthraquinone analogs disclosed herein have antimicrobial activity while seemingly similar compounds demonstrate anticancer activity but lesser antimicrobial activity.

Antenna structure capable of increasing its frequency bandwidth/frequency band by bending a connection element thereof

An antenna structure consists of a radiation element, a grounding element, a short element, a connection element, and a signal feeding element. The short element is coupled between the radiation element and the grounding element. The connection element is disposed between the radiation element and the grounding element. The connection element has at least a first segment and a second segment, wherein the first segment and the second segment form a bend. The signal feeding element is coupled between the connection element and the grounding element. The first segment of the connection element is substantially parallel to the grounding element and is at a designated distance from the grounding element.

Contamination-resistant bearing assembly

A contamination-resistant bearing assembly includes an inner ring, an outer ring, a rolling unit, two contamination-resistant internal sleeves and two contamination-resistant external sleeves. The outer ring cooperates with the inner ring to define a bearing space where the rolling unit and the sleeves are disposed. The external sleeves are located at two opposite sides of the internal sleeves which are located at two opposite sides of the rolling unit in an axial direction. Each of the external sleeves includes a metal rigid shell and a sealing member.

Stimulation device combining swinging and running exercises

Sustained release oral dosage form containing dalfampridine

The present invention provides a sustained release oral dosage form containing dalfampridine that can be administered once daily. The dosage form includes dalfampridine as the active pharmaceutical ingredient and the excipients comprising osmotic agents in a tablet core. The sustained release oral dosage form of the present invention can be administrated once daily and can provide a proper fluctuation index to reduce undesired adverse effect, prevent alcohol-induced dose dumping and release drug at a rate sufficient to maintain certain drug plasma concentration.

Electrical card connector

An electrical card connector includes an insulating housing ( 2 ), a shell ( 1 ) mounted on the insulating housing, a plurality of terminals ( 3 ). The insulating housing includes a plurality of terminal rooms ( 23 ) arranged in two rows along a card inserting direction and a middle part ( 24 ) defined between the two rows of terminal rooms. The terminals retained in corresponding terminal rooms of the insulating housing. The shell mounted over the insulating housing to define a card slot, the shell comprising a main body ( 11 ), the main body having an embossment ( 112 ) protruding into the card slot for engaging with the card, the embossment being situated rightly above the middle part of the insulating housing to press on an inserted card and to distance other portion of the main body from the card.

Display and bracket for backlight module

In a backlight module of a display, a plurality of optical films has positioning protrusions disposed in a positioning slot of a plastic frame for correct installation of the optical films on a light guide plate. One or more middle optical films further include a fixing protrusion at the side corresponding to the light source and an existing opening formed by bending a system bracket out of a holder is provided for placement of the fixing protrusion of the middle optical films. A double-sided adhesive tape disposed between a display panel and the holder is further utilized for securing the fixing protrusion such that the middle optical films can be securely fixed and not falling apart during an impact test or a falling test.

Circuit board circuit apparatus and light source apparatus

A circuit board circuit apparatus and a light source apparatus including a substrate, a circuit layer, and at least one electronic component are disclosed. The circuit layer is formed on a surface of the substrate. The circuit layer includes a first circuit and a second circuit which are coplanar-disposed. The at least one electronic component is disposed on the circuit layer and connected with the circuit layer. Each electronic component has a first contact and a second contact. At least a part of the second circuit is disposed between the at least one electronic component and the first circuit. The at least one electronic component crosses over the second circuit, so that the second circuit penetrates through the bottom of the electronic component between the first contact and the second contact.

Conductive feature formation and structure

整體而言，本揭示提供與導電部件有關的示範實施例，例如金屬接觸件、導孔、導線等，以及用於形成這些導電部件的方法。在一方法實施例中，在半導體基底上形成介電層，半導體基底具有源極/汲極區，形成開口穿過介電層至源極/汲極區，藉由相同的電漿增強化學氣相沉積(PECVD)製程，在源極/汲極區上形成矽化物區，並且沿著介電層的多個側壁，在開口中形成阻障層。

Dispensing nozzle design and dispensing method thereof

An apparatus for dispensing fluid includes a fluid source; a nozzle having an inner layer and an outer layer, the inner layer defining a bore in fluid communication with the fluid source; and a plurality of pins each moveable to be in physical contact with the outer layer, wherein the plurality of pins is operable to apply a force towards the outer layer to adjust a cross-section of the bore.

Modification device and method for selectively modifying transmission performance of image frame data

A device and method is provided to selectively modify the transmission performance of a frame data. Through a parallel transmission interface, the frame data is transmitted under a corresponding interface protocol and transmitted toward an image display. The method first detects a data size of the frame data and then provides a transmission control signal based on the detection of the data size. Next, selectively divide the frame data by a factor M based on the transmission control signal. Furthermore, transmit the divided frame data at a raised clock rate based on the factor M. Afterwards, temporarily store the divided frame data about to be transmitted toward the image display until the whole frame data is transmitted.

Over-current protection system of and method thereof

Method for controlling the picture capturing process of a digital camera

Method for forming photoresist layer

A method for forming a photoresist layer includes the following steps. A first photoresist layer is formed on a first wafer provided on a platen. The platen includes a plurality of temperature zones being at a first set of process temperatures. A first etching process is performed on the first wafer to form a first patterned metal layer. A profile variation of the first patterned metal layer with respect to a reference profile is determined. The first set of process temperatures is adjusted to a second set of process temperatures according to the profile variation. A second photoresist layer is formed on a second wafer provided on the platen with the temperature zones being at the second set of process temperatures respectively.

Sustained release oral osmotic tablet containing dalfampridine and pharmaceutical use thereof

本發明揭露一種每日服用一次的緩釋口服劑型，所述之緩釋口服劑型的一核芯包括有達方吡啶及其他醫藥可接受之賦形劑，如滲透壓劑，本發明除每日只需服用一次外，更有波動指數良好的優點，故可降低藥物的副作用，此外，本發明更可避免酒精誘導的劑量突釋，以及能有效維持血中藥物濃度，故而對特定疾病具有較好的療效。

Light source module with high heat-dissipation efficiency

An exemplary light source module includes a printed circuit board (PCB), a heat-dissipating assembly, and a number of light emitting elements. The PCB includes a first surface, an opposite second surface, and a number of through holes. The heat-dissipating assembly is located adjacent to the second surface and includes a base, a number of heat-conducting elements, and a number of heat dissipation fins. The base includes a third surface defining a number of cavities therein and an opposite fourth surface. The heat dissipation fins extend from the fourth surface. Each of the heat-conducting elements is inlaid in a corresponding cavity. Each of the light emitting elements is placed in a corresponding through hole and thermally contacts a corresponding heat-conducting element. Each light emitting element electrically connects with the PCB and defines a respective light emitting surface located outside the corresponding through hole.

Automatic measurement apparatus for thermometers by image recognition

Photolithography Method and Photolithography System

A photolithography method includes dispensing a first liquid toward a target layer through a nozzle at a first distance from the target layer; moving the nozzle such that the nozzle is at a second distance from the target layer, wherein the second distance is different from the first distance; dispensing a second liquid toward the target layer through the nozzle at the second distance from the target layer; and patterning the target layer after dispensing the first liquid and the second liquid.

BUSBAR CONTACT

Ein Verfahren im Einklang mit der vorliegenden Offenbarung umfasst das Aufnehmen eines Werkstücks, welches eine Gate-Struktur, ein erstes Source-/Drain-Merkmal (S/D-Merkmal), ein zweites S/D-Merkmal, eine erste dielektrische Schicht über der Gate-Struktur, dem ersten S/D-Merkmal und dem zweiten S/D-Merkmal, einen ersten S/D-Kontakt über dem ersten S/D-Merkmal, einen zweiten S/D-Kontakt über dem zweiten S/D-Merkmal, eine erste Ätzstoppschicht (ESL) über der ersten dielektrischen Schicht, und eine zweite dielektrische Schicht über der ersten ESL aufweist, das Bilden einer S/D-Kontakt-Durchkontaktierung durch die zweite dielektrische Schicht und die erste ESL, um den ersten S/D-Kontakt anzukoppeln, das Bilden einer Gate-Kontaktöffnung durch die zweite dielektrische Schicht, die erste ESL und die erste dielektrische Schicht zum Freilegen der Gate-Struktur, und das Bilden einer Sammelschienenöffnung angrenzend an die Gate-Kontaktöffnung zum Freilegen des zweiten S/D-Kontakts, und das Bilden eines Sammelschienenkontakts in der Sammelschienenöffnung. A method consistent with the present disclosure includes picking up a workpiece having a gate structure, a first source/drain (S/D) feature, a second S/D feature, a first dielectric layer over the gate structure, the first S/D feature and the second S/D feature, a first S/D contact over the first S/D feature, a second S/D contact over the second S/D feature comprising a first etch stop layer (ESL) over the first dielectric layer, and a second dielectric layer over the first ESL, forming an S/D contact via through the second dielectric layer and the first ESL to form the first S/ to couple D-contact, forming a gate contact opening through the second dielectric layer, the first ESL, and the first dielectric layer to expose the gate structure, and forming a busbar opening adjacent the gate contact opening to expose the second S/D -Contact, and making a busbar contact in the busbar opening.

Carbohydrate-cyclopamine conjugates as anticancer agents

Various anticancer compounds are disclosed, including a series of carbohydrate-cyclopamine conjugates. These compounds include pyranose, furanose, and mannitol conjugates, linked through a 1,2,3-triazine ring to the nitrogen of cyclopamine. Methods for preparing these compounds, pharmaceutical compositions containing these compounds, and their use as anticancer agents are also disclosed.

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

Bei einem Verfahren zur Herstellung eines Halbleiterbauelements wird eine Source/Drain-Epitaxieschicht gebildet, eine oder mehrere dielektrische Schichten werden über der Source/Drain-Epitaxieschicht gebildet, eine konkave U-förmige Öffnung wird in der einen oder den mehreren dielektrischen Schichten gebildet, um die Source/Drain-Epitaxieschicht freizulegen, eine konkave U-förmige erste Silizidschicht wird auf der freigelegten Source/Drain-Epitaxieschicht gebildet, eine konkave U-förmige zweite Silizidschicht, die sich von der ersten Silizidschicht unterscheidet, wird auf der ersten Silizidschicht gebildet, und ein Source/Drain-Kontakt wird über der zweiten Silizidschicht gebildet. In a method of fabricating a semiconductor device, a source/drain epitaxial layer is formed, one or more dielectric layers are formed over the source/drain epitaxial layer, a concave U-shaped opening is formed in the one or more dielectric layers around the Exposing the source/drain epitaxial layer, a concave U-shaped first silicide layer is formed on the exposed source/drain epitaxial layer, a concave U-shaped second silicide layer, which differs from the first silicide layer, is formed on the first silicide layer, and a Source/drain contact is formed over the second silicide layer.

Display module

在顯示器模組的背光模組中，多個疊置的光學膜片於非光源側以定位用的凸耳設置於膠框框體的定位槽中，使光學膜片於設置於導光元件上時得以正確定位。多個光學膜片中的中間光學膜片在對應光源側另外形成凸出的固定凸耳，同時在光源側的框架上，利用既有的系統支架彎折後所形成的破口，讓中間膜片的固定凸耳延伸於破口內，並利用設置於顯示面板與框架之間的雙面黏合元件固定中間膜片的固定凸耳，使背光模組的多個光學膜片的中間膜片得以妥善固定，不至於在撞擊或摔落測試中脫落。

Circuit board circuit apparatus and light source apparatus

本發明揭露一種電路板電路裝置及光源裝置，包含基板、電路層及至少一電子元件。電路層形成於基板之一表面上。電路層包含共平面設置之第一線路及第二線路。至少一電子元件設置於電路層上並與電路層連接。每一電子元件具有第一接點及第二接點。第二線路之至少一部分位於至少一電子元件與第一線路之間。至少一電子元件跨越第二線路，使第二線路自第一接點及第二接點之間穿過電子元件下方。

Semiconductor device structure and methods of forming the same

A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a substrate comprising an NMOS region and a PMOS region abutting the NMOS region, a first shallow trench isolation (STI) disposed across the PMOS region and the NMOS region, the first STI has a first bottom being slanted from the NMOS region towards the PMOS region. The semiconductor device structure also includes a first fin disposed in the PMOS region, a first source/drain epitaxial feature disposed over the first fin, a second fin disposed in the NMOS region, a second source/drain epitaxial feature disposed over the second fin, a first dielectric feature disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature, the first dielectric feature having a portion embedded in the first STI. The semiconductor device structure further includes a conductive feature disposed over the first and second source/drain epitaxial features and the first dielectric feature.

Semiconductor device and methods of formation

Some implementations described herein provide a nanostructure transistor including inner spacers between a gate structure and a source/drain region. The inner spacers, formed in cavities at end regions of sacrificial nanosheets during fabrication of the nanostructure transistor, include concave-regions that face the source/drain region. Formation techniques include forming the sacrificial nanosheets and inner spacers to include certain geometric and/or dimensional properties, such that a likelihood of defects and/or voids within the inner spacers and/or the gate structure are reduced.

Semiconductor device and methods of formation

Some implementations described herein provide a semiconductor device having an oxide-filled barrier structure between structures of gate-all-around transistors included in the semiconductor device. The use of the oxide-filled barrier structure may reduce a distance separating nanosheet structures of a p-type metal-oxide semiconductor fin structure and an n-type metal-oxide semiconductor fin structure, broaden an availability of work-function metals for gate structures formed around nanochannels of the p-type metal-oxide semiconductor fin structure and n-type metal-oxide semiconductor structure, and improve a performance of the gate-all-around transistors by reducing miller capacitances of the gate-all-around transistors. Furthermore, the oxide-filled barrier structure may enable the combining of the p-type metal-oxide semiconductor fin structure and the n-type metal-oxide semiconductor fin structure to form a type of integrated circuitry, such as an inverter.