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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 2. Отображено 2.
22-07-2015 дата публикации

Hoisting tooling for cab of tyre crane

Номер: CN104787666A
Автор: Wu Rende, Wei Dailong, Fang Zhiqiang, He Huawen
Принадлежит:

The invention relates to a hoisting tooling for the cab of a tyre crane. The hoisting tooling is characterized by comprising a base, a balancing weight, a length-fixed steel wire rope group and a chain block group, wherein the base comprises a balancing weight area on the left side and a right cab bearing area on the right side; a plurality of lifting lug groups are sequentially arranged on two side edges of the base in the long axis direction of the base; the length-fixed steel wire rope group comprises two length-fixed steel wire ropes of which the lower ends are connected with two lifting lugs of the first lifting lug group respectively; the chain block group comprises two chain blocks of which the lower ends are connected with two lifting lugs of the third lifting lug group respectively; the upper ends of the chain blocks are fixedly connected with the upper end of the length-fixed steel wire ropes, so as to form hoisting points for hoisting. The hoisting tooling has the benefits that ...

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Номер записи: 1
21-05-2020 дата публикации

IMAGE SENSOR AND FORMING METHOD THEREOF

Номер: US20200161361A1
Автор: HUANG Xinyi, Wei Dailong, Zhang Chao, Zhang Xiangpeng
Принадлежит:

An image sensor and forming method thereof are disclosed. The image sensor comprises: a semiconductor substrate which comprises a first silicon substrate layer, a substrate oxide layer and a second silicon substrate layer that are stacked; a transmission gate electrode disposed on the surface of the second silicon substrate layer; a floating diffusion disposed in the semiconductor substrate on one side of the transmission gate electrode; a photodiode doped region disposed in the first silicon substrate layer; and a conductive via structure disposed in the semiconductor substrate on the other side of the transmission gate electrode, penetrating through the second silicon substrate layer and the substrate oxide layer and electrically connected to the photodiode doped region. 1. An image sensor , comprising:a semiconductor substrate, comprising a first silicon substrate layer, a substrate oxide layer and a second silicon substrate layer that are stacked;a transmission gate electrode, disposed on a surface of the second silicon substrate layer;a floating diffusion, disposed in the semiconductor substrate on one side of the transmission gate electrode;a photodiode doped region, disposed in the first silicon substrate layer; anda conductive via structure, disposed in the semiconductor substrate on the other side of the transmission gate electrode, penetrating through the second silicon substrate layer and the substrate oxide layer, and electrically connected to the photodiode doped region.2. The image sensor according to claim 1 , wherein the boundary of the photodiode doped region extends to below the floating diffusion.3. The image sensor according to claim 1 , wherein the material of the conductive via structure is N-type doped poly-silicon.4. The image sensor according to claim 3 , further comprising:an N-type doped silicon region, disposed in the first silicon substrate layer, wherein the conductive via structure is electrically connected with the photodiode doped ...

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Номер записи: 2