20-02-2008 дата публикации
Номер: CN0101125759A
Принадлежит:
The invention relates to the technology of ceramics joining, in particular to a novel technology of diffusion bonding of ternary layered carbide Ti3AlC2, which is characterized in that: high temperature resistant Ti3Al (Si) C2 solid solution is generated at the interface and no brittle phase is produced, thus solving the technical problem of poor jointing quality of ternary layered carbide Ti3AlC2. Simple substance Si is sputtered at the surface of ternary layered carbide Ti3AlC2 that is to be weld with thickness between 4-10 Mum and the sandwich structure of Ti3AlC2/Si/Ti3AlC2 is formed. A check bar is put into a hot pressing furnace, diffused and bonded under the protection of argon. The process condition is that: welding temperature is 1300-1400 DEG C, welding pressure is 2-5 MPa and welding time is 120-240 min. The diffuse and welded joint obtained by the method of the invention has no new reaction phase at the interface, avoids the effect of new brittle phase on joint strength; besides ...
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