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Применить Всего найдено 5. Отображено 5.
01-09-2010 дата публикации

Bismuth-doped silicon-aluminum-calcium optical glass and preparation method thereof

Номер: CN0101817636A
Автор: LIU ZHILIANG, QIU JIANBEI, SONG ZHIGUO, XIONG DAMIN, YANG ZHENGWEN, ZHOU DACHENG, ZHILIANG LIU, JIANBEI QIU, ZHIGUO SONG, DAMIN XIONG, ZHENGWEN YANG, DACHENG ZHOU
Принадлежит:

The invention relates to a bismuth-doped silicon-aluminum-calcium-based optical glass and a preparation method thereof. The invention is characterized in that the glass is prepared from the following raw materials in percentage by mol: 39.9-64.9 of SiO, 25-40 of Al2O3, 10-40 of CaO and 0.1-10 of Bi2O3.The glass can acquire stronger near-infrared ultra-wide-band fluorescence under the action of laser pumping; compared with the quartz glass, the optical glass has obviously-lowered fusing temperature; the optical glass does not need to be subject to sitallization processing, and has better mechanical strength and higher aluminum oxide content; and the bismuth oxide can be doped at high concentration. Therefore, the optical glass has the ultra-wide-band optical property for covering the overall communication wave band, and is hopeful to be applied to the technical fields of an ultra-wide-band optical amplifier, a high-power laser, a tunable laser and the like.

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Номер записи: 1
17-12-2008 дата публикации

Novel preparation for synthetic gem chromic coloring

Номер: CN0101323983A
Автор: YU JIE, CHEN JINGCHAO, XIONG DAMIN, ZU ENDONG, ZHOU XIAOLONG, JIE YU, JINGCHAO CHEN, DAMIN XIONG, ENDONG ZU, XIAOLONG ZHOU
Принадлежит:

The invention discloses a preparation method of gem staining, which belongs to the technical field of gem synthesis. The technical proposal of the invention comprises the following steps: implantation filtering of ion species to different crystal structures is implemented by a simulating procedure according to required colors, orientation of an implanted gem crystal is implemented and high energy ion implantation is implemented in a direction that is parallel to the direction of a close atom packing surface. The implanted gem sample is processed by heat at high temperature and in the atmosphere of high-purity argon or the oxidation and reduction atmosphere. The invention provides a staining method with stable color generation, even staining and rich color, does not affect the refraction index and hardness of gems, and simultaneously can obtain specified patterns and shapes on gem surfaces. The sample prepared by the preparation method of the invention has the advantages of wear resistance ...

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Номер записи: 2
16-02-2011 дата публикации

Preparation method of noble metal doped In2O3/SnO3 porous-channel structured gas-sensitive material

Номер: CN0101973759A
Автор: XIAOLONG ZHOU, JIANCHUN CAO, JINGCHAO CHEN, JIN RUAN, JIE YU, YAN DU, LI SHEN, DAPING WU, DAMIN XIONG, ZHOU XIAOLONG, CAO JIANCHUN, CHEN JINGCHAO, RUAN JIN, YU JIE, DU YAN, SHEN LI, WU DAPING, XIONG DAMIN
Принадлежит:

The invention relates to a preparation method of a noble metal doped porous-channel structured In2O3/SnO3 gas-sensitive material, which comprises the following steps of: pressing market In2O3 and SnO2 in the ratio of 4:1 or 7:3 or 3:2 together with noble metal Pt or Pd or Ag powder into a blank in a steel mold; and then, loading the blank into an oxygen atmosphere sintering furnace for solid phase sintering to finally obtain the noble metal doped porous-channel structured In2O3/SnO3 gas-sensitive material. The addition quantity of the noble metal Pt or Pd or Ag powder accounts for 0.05% of the total quantity of In2O3 and SnO2; with respect to the oxygen atmosphere sintering condition for the in-situ sintering growth, the heating rate is 50-500 DEG C/h; a heat preservation process is divided into two stages, the temperature range of the first stage is 600-700 DEG C, and the temperature range of the second stage is 1250-1450 DEG C; the time of heat preservation is 1-5h; and the oxygen flow ...

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Номер записи: 3
27-04-2011 дата публикации

Method for preparing nano Ag-loaded honeycomb-structured SnO2 catalyst

Номер: CN0102029153A
Автор: Zhou Xiaolong, Cao Jianchun, Chen Jingchao, Yu Jie, Shen Li, Xiong Damin
Принадлежит:

The invention relates to a preparation method of a nano Ag-loaded honeycomb-structured SnO2 catalyst. By using the technology, a novel structured Ag/SnO2 catalyst material which has the advantages of large specific area, uniform distribution of nano noble metal, stable catalysis material structure and obvious catalysis effect can be obtained on the basis of machining a supersaturated tin-silver alloy by combining a heat treatment technology under an oxygen atmosphere condition. By using the invention, a novel structured catalysis material which has the advantages of large specific area, uniform distribution of nano noble metal, stable catalysis material structure and obvious catalysis effect can be obtained. Besides, the preparation technology can be combined with the traditional metal alloy material preparation, machining and heat-treating equipment and has the advantages of low investment, low cost and the like.

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Номер записи: 4
09-02-2011 дата публикации

Preparation method of In2O3/SnO2 gas sensitive material with porous structure

Номер: CN0101967054A
Автор: XIAOLONG ZHOU, JIANCHUN CAO, JINGCHAO CHEN, JIN RUAN, JIE YU, YAN DU, LI SHEN, DAPING WU, DAMIN XIONG, ZHOU XIAOLONG, CAO JIANCHUN, CHEN JINGCHAO, RUAN JIN, YU JIE, DU YAN, SHEN LI, WU DAPING, XIONG DAMIN
Принадлежит:

The invention relates to a preparation method of an In2O3/SnO2 gas sensitive material with a porous structure. The method comprises the following steps: mixing commercial In2O3 powder and SnO2 powder in a weight ratio of 4:1 or 7:3 or 3:2 place and mixing, compressing into a green body, and then placing the green body in a sintering furnace with oxygen atmosphere and carrying out solid phase sintering to finally obtain the In2O3/SnO2 gas sensitive material with the porous structure. The method of the invention controls the sintering temperature to obtain the In2O3/SnO2 gas sensitive material with the micron or submicron grade porous structure with regular holes, thus the porous structure is adopted to increase the specific area so as to increase the gas sensitivity and the weight of In2O3/SnO2 is controlled to increase the selectivity to different gases. Therefore, the gas sensitive material with the porous structure which has high sensitivity and selectivity can be obtained. The method ...

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Номер записи: 5