A diffusion technique applied on silicon solar battery

A diffusion technique applied on silicon solar battery

The invention relates to a diffusion process which is applied in a silicon solar cell, the diffusion steps can be mainly divided into two steps, which specifically include: (1) a first diffusion is carried out: a silicon wafer is placed in a diffusion furnace, big nitrogen, small nitrogen and oxygen are introduced simultaneously, the diffusion temperature is at 800 to 860 DEG C and the time is 15 to 30 minutes; (2) the temperature of the diffusion furnace is increased to 870 to 920 DEG C, the silicon wafer is stably placed for 10 to 30 minutes and then is distributed; (3) a second diffusion is carried out: the diffusion temperature is at 870 to 920 DEG C, the time is 1 to 10 minutes; (4) the diffusion process is finished, the temperature of the diffusion furnace is decreased and the silicon wafer is taken out. The invention can obtain more optimized doping curve in an emission region based on the method, thereby reducing the Auger recombination which is caused by high doping in the emission ...