18-10-2012 дата публикации
Номер: US20120261778A1
Spin torque magnetic memory elements that have a pinned layer, two free layers, and a current-blocking insulating layer proximate to at least one of the free layers. The resistive state (e.g., low resistance or high resistance) of the memory elements is altered by passing electric current through the element in one direction. In other words, to change from a low resistance to a high resistance, the direction of electric current is the same as to change from a high resistance to a low resistance. The elements have a unidirectional write scheme. 1. A memory element comprising: a first ferromagnetic free layer; and', 'a barrier layer; and, 'the first magnetic element comprising, 'a first magnetic element,'} the first ferromagnetic free layer;', 'a second ferromagnetic free layer;', 'a non magnetic spacer; and', 'an insulator layer having a via therethrough,, 'the second magnetic element comprising, 'a second magnetic element'}wherein the first magnetic element and the second magnetic element are configured in series.2. The memory element according to claim 1 , wherein the first magnetic element further comprises a pinned ferromagnetic layer.3. The memory element according to claim 2 , wherein the barrier layer is positioned between the pinned ferromagnetic layer and the first ferromagnetic free layer.4. The memory element according to claim 1 , wherein the non magnetic spacer layer comprises a metallic material.5. The memory element according to claim 1 , wherein the non magnetic spacer is positioned between the first ferromagnetic free layer and the second ferromagnetic free layer; and the insulator layer is positioned between the non magnetic spacer layer and the second ferromagnetic free layer.6. The memory element according to claim 5 , wherein the via has material from the non magnetic spacer layer therein.7. The memory element according to claim 5 , wherein the via has material from the second ferromagnetic free layer therein.8. The memory element according to ...
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