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Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Применить Всего найдено 37. Отображено 37.
15-10-2009 дата публикации

NEGATIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME

Номер: JP2009237167A
Принадлежит:

PROBLEM TO BE SOLVED: To solve problems relating to a technique for improving performances in microphotofabrication using far UV light, in particular, ArF excimer laser light at a wavelength of 193 nm, and more specifically, to provide a negative resist composition having a good bridge margin. SOLUTION: The negative resist composition contains (A) an alkali-soluble resin, (B) a compound that crosslinks by a function of an acid, (C) a hydrophobic resin, and (D) a photo-acid generator. COPYRIGHT: (C)2010,JPO&INPIT ...

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19-01-2012 дата публикации

ACTINIC RAY SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME

Номер: JP2012013835A
Принадлежит:

PROBLEM TO BE SOLVED: To provide an actinic ray sensitive or radiation sensitive resin composition that excels in roughness property, exposure latitude, depth of focus and development defect performance and that allows to form a fine isolated space pattern of favorable shape, and to provide a pattern forming method using the same. SOLUTION: An actinic ray sensitive or radiation sensitive resin composition contains a resin (P) including a repeating unit (A) comprising a structure moiety (S1) which is decomposed by action of an acid to generate an alkali soluble group and a structure moiety (S2) which is decomposed by action of an alkali developer to increase the dissolution rate in the alkali developer, where the content of the repeating unit (A) is 30 mol% or more based on the total repeating units in the resin. COPYRIGHT: (C)2012,JPO&INPIT ...

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11-03-2010 дата публикации

NEGATIVE RESIST COMPOSITION AND PATTERN FORMING METHOD

Номер: JP2010054634A
Принадлежит: Fujifilm Corp

【課題】良好な感度、パターン形状を示し、残渣が少なく、かつ未露光部の残膜の少ないネガ型レジスト組成物、それを用いたパターン形成方法を提供する。 【解決手段】(A)アルカリ可溶性樹脂、(B)ラジカル重合性基とアルカリ可溶性基とを有する化合物、および、(C)光ラジカル発生剤、を含有する、ネガ型レジスト組成物、およびそれを用いたパターン形成方法。 【選択図】なし

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16-06-2011 дата публикации

ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME

Номер: JP2011118335A
Принадлежит:

PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition having good pitch dependence and coverage dependence of CD and a resist pattern forming method using the same. SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition includes: (A) a resin increasing the solubility in an alkali developer by the action of an acid, the resin containing a repeating unit (a) having a cyano group and a group decomposing by the action of an acid to be made alkali-soluble; (B) a compound generating an acid upon irradiation with an actinic ray or radiation; and (C) a resin having at least either a fluorine atom or a silicon atom and a group decomposing by the action of an alkali developer to increase the solubility in an alkali developer. COPYRIGHT: (C)2011,JPO&INPIT ...

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30-07-2009 дата публикации

NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD

Номер: JP2009169355A
Принадлежит:

PROBLEM TO BE SOLVED: To solve problems on the technique for improving performances of microphotofabrication using far ultraviolet light, especially ArF excimer laser light of 193 nm wavelength, in particular, to provide a negative resist composition which avoids pattern collapse even in fine pattern formation and exhibits good resolution. SOLUTION: The negative resist composition contains (A) an alkali-soluble resin, (B) a compound having two or more vinyl structures in a molecule and (C) a photo-cationic polymerization initiator. COPYRIGHT: (C)2009,JPO&INPIT ...

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29-10-2009 дата публикации

NEGATIVE RESIST COMPOSITION AND PATTERN FORMING METHOD

Номер: JP2009251392A
Принадлежит:

PROBLEM TO BE SOLVED: To provide a negative resist composition less liable to cause a film thickness loss and pattern collapse and a pattern forming method. SOLUTION: The negative resist composition comprises: (A) an alkali-soluble resin; (B) a crosslinking agent which crosslinks an alkali-soluble resin under the action of an acid; (C1) a compound which allows a crosslinking reaction to proceed upon irradiation with actinic rays or radiation; (C2) a photoradical generator; and (D) a compound having a radical polymerizable group. The pattern forming method is also provided. COPYRIGHT: (C)2010,JPO&INPIT ...

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05-11-2009 дата публикации

NEGATIVE RESIST COMPOSITION AND RESIST PATTERN-FORMING METHOD USING THE SAME

Номер: JP2009258603A
Принадлежит:

PROBLEM TO BE SOLVED: To solve problems on a technique for improving performance of microphotofabrication using far ultraviolet light, particularly an ArF excimer laser having a wavelength of 193 nm, specifically to provide a negative resist composition which hardly suffers from pattern collapses during fine pattern formation, while exhibiting good resolution, and to provide a resist pattern-forming method using the same. SOLUTION: The negative resist composition contains (A) an alkali-soluble resin, (B) a compound containing a low-molecular-weight compound having an oxetane structure having a molecular weight of ≤2,000, and (C) a cationic photopolymerization initiator. The resist pattern-forming method using the same is also provided. COPYRIGHT: (C)2010,JPO&INPIT ...

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05-11-2009 дата публикации

NEGATIVE RESIST COMPOSITION AND RESIST PATTERN-FORMING METHOD

Номер: JP2009258506A
Принадлежит:

PROBLEM TO BE SOLVED: To provide a negative resist composition which ensures an adequate bridge margin (that is, substantially avoids the occurrence of the defect that patterns connect with each other). SOLUTION: The negative resist composition contains (A) a resin whose solubility in an alkali developer decreases by the action of an acid, (B) a cationic polymerizable compound, (C) a cationic photopolymerization initiator, and (D) a compound which generates an acid upon irradiation with actinic rays or radiation. A pattern-forming method using the composition is also provided. COPYRIGHT: (C)2010,JPO&INPIT ...

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02-09-2005 дата публикации

OLIGOLACTIC ACID ESTER CONTAINING CARBOXYMETHYL GROUP ON SIDE CHAIN

Номер: JP2005232048A
Принадлежит:

PROBLEM TO BE SOLVED: To synthesize a chain or cyclic oligolactic acid ester containing a carboxymethyl group on the side chain. SOLUTION: A chain oligolactic acid ester containing a carboxymethyl group on the side chain is firstly synthesized and then subjected to cyclization reaction by intramolecular dehydration condensation to synthesize a cyclic oligolactic acid ester containing a carboxymethyl group on the side chain. COPYRIGHT: (C)2005,JPO&NCIPI ...

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12-05-2011 дата публикации

ACTIVE RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE COMPOSITION

Номер: JP2011095635A
Принадлежит:

PROBLEM TO BE SOLVED: To provide an active ray-sensitive or radiation-sensitive resin composition which has improved DOF (Depth Of Focus), storage stability, resolution and pattern features and suitable even for a liquid immersion process for a line width of not more than 45 nm, and to provide a pattern forming method using the composition. SOLUTION: The active ray-sensitive or radiation-sensitive resin composition contains (A) a compound generating a base by irradiation with active rays or radiation, (B) a resin having a repeating unit having a lactone structure, the solubility of which with an alkali developing solution increases by an action of an acid, and (C) a compound generating an acid by irradiation with active rays or radiation. The pattern forming method is carried out by using the above composition. COPYRIGHT: (C)2011,JPO&INPIT ...

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29-09-2011 дата публикации

ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME

Номер: JP2011191446A
Принадлежит: Fujifilm Corp

【課題】通常のドライプロセスに加え、線幅45nm以下の液浸プロセスにも適合した、DOF、パターン倒れ、及び疎密依存性が改良された感活性光線性又は感放射線性樹脂組成物、並びに、それを用いたレジスト膜及びパターン形成方法を提供する。 【解決手段】(A)特定のラクトン構造を有する繰り返し単位と、特定のスルホンアミド構造を有する繰り返し単位とを含有し、酸の作用によりアルカリ現像液に対する溶解性が増大する樹脂、及び(B)活性光線又は放射線の照射により酸を発生する化合物を含有した感活性光線性又は感放射線性樹脂組成物、並びに、これを用いたレジスト膜及びパターン形成方法。 【選択図】 なし

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06-11-2008 дата публикации

SURFACE-TREATING AGENT FOR PATTERN FORMATION AND PATTERN-FORMING METHOD USING THE SURFACE-TREATING AGENT

Номер: JP2008268742A
Принадлежит: Fujifilm Corp

【課題】第一のレジスト膜上に第一のレジストパターンを形成した後、第一のレジストパターンの上に第二のレジスト膜を形成し第二のレジストパターンを形成するために、第一のレジストパターンに対して化学的な処理を行って第二のレジスト液に溶解しないように性状を変化させるフリージングプロセスにおいて、第一のレジストパターンが第二のレジスト液に溶解せず、第一のレジストパターンの寸法が変化しない、更には、第一のレジストパターンと第二のレジストパターンのドライエッチング耐性が同じであるという要件を満たすように、第一のレジストパターンに対して化学的な処理を行う為のフリージングプロセス用の表面処理剤及びそれを用いたパターン形成方法を提供する。 【解決手段】アミノ基および芳香族環を有する特定の化合物を含有するパターン形成用表面処理剤、及び、当該表面処理剤を用いたパターン形成方法。 【選択図】なし

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27-08-2009 дата публикации

NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD USING THE SAME

Номер: JP2009192935A
Принадлежит: Fujifilm Corp

【課題】遠紫外線光、特に波長が193nmのArFエキシマレーザを用いるミクロフォトファブリケーションの性能向上技術の課題を解決することであり、より具体的には、微細なパターン形成においても、高解像性、大きなブリッジマージンを示すネガ型レジスト組成物及びそれを用いたレジストパターン形成方法を提供する。 【解決手段】(A)特定のジカルボニルメチレン構造を有する繰り返し単位を有するアルカリ可溶性樹脂、(B)酸の作用によりアルカリ可溶性樹脂を架橋する化合物及び(C)活性光線又は放射線の照射により酸を発生する化合物を含有することを特徴とするネガ型レジスト組成物及びそれを用いたレジストパターン形成方法。 【選択図】なし

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15-09-2011 дата публикации

ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION

Номер: JP2011180393A
Принадлежит:

PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition enabling a pattern to be formed, the pattern having improved line width roughness, remedied development defects and pattern collapse and exhibiting good conformability to an immersion liquid in immersion exposure, and to provide a resist film and a pattern forming method using the composition. SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition includes (A) a resin including a repeating unit having a structural moiety (S1) which decomposes by the action of an acid to thereby generate an alkali-soluble group and a structural moiety (S2) which exhibits an increased dissolution rate in an alkali developer by the action of the alkali developer, (B) a resin having at least one of a fluorine atom and a silicon atom, and (C) a compound which generates an acid upon irradiation with actinic rays or radiation. The resist film and the pattern forming method using the composition ...

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07-05-2009 дата публикации

NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD

Номер: JP2009098602A
Принадлежит:

PROBLEM TO BE SOLVED: To solve the problems of the performance improving technique of microphotofabrication using far-ultraviolet light, particularly ArF excimer laser light of 193 nm wavelength, specifically to provide a negative resist composition which, even in fine pattern formation, avoids pattern collapse and exhibits good resolution. SOLUTION: The negative resist composition includes (A) an alkali-soluble resin, (B) a compound having a conjugated diene structure, and (C) a photo-cationic polymerization initiator. COPYRIGHT: (C)2009,JPO&INPIT ...

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26-02-2009 дата публикации

SURFACE TREATING AGENT FOR PATTERN FORMATION AND PATTERN FORMING METHOD USING THE TREATING AGENT

Номер: JP2009042752A
Автор: YOSHITOME MASAHIRO
Принадлежит:

PROBLEM TO BE SOLVED: To provide a surface treating agent for performing the chemical treatment for a first resist pattern to satisfy the requirements that the first resist pattern is not dissolved in a second resist solution, the dimensions of the first resist pattern do not change, and the first resist pattern and the second resist pattern have the same dry etching resistance, in a freezing process in which chemical treatment is performed for the first resist pattern to thereby change the property thereof not to dissolve in a second resist solution, and to provide a pattern forming method using it. SOLUTION: The surface treating agent contains at least one compound having at least one structure in which adjacent carbon atoms on a benzene ring have a group expressed by X and a group expressed by -CH2-OR1 (X indicates univalent organic group, hydroxyl group, amino group or mercapto group. R1 indicates a hydrogen atom or univalent organic group), and the pattern forming method uses the surface ...

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22-10-2009 дата публикации

NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD

Номер: JP2009244780A
Принадлежит:

PROBLEM TO BE SOLVED: To solve the problem in a technique for improving the performance of microphotofabrication using far ultraviolet ray light, particularly, ArF excimer laser having wavelength of 193 nm, more specifically, to provide a negative resist composition excellent in sensitivity, pattern shape and pattern collapse. SOLUTION: The negative resist composition contains (A) an alkali-soluble resin, (B) a compound crosslinkable by the effect of an acid, and (C) a photo-acid-generating agent. The (A) alkali-soluble resin is a resin containing a repeat unit having a sulfonamide structure represented by the general formula (SF). In the formula (SF), * represents a single bond or organic group, and RSF represents an alkyl group, one or more hydrogen atoms of the alkyl group being substituted by fluorine atoms. COPYRIGHT: (C)2010,JPO&INPIT ...

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29-01-2009 дата публикации

SURFACE TREATMENT AGENT FOR FORMING PATTERN, AND PATTERN FORMING METHOD USING TREATMENT AGENT

Номер: JP2009020510A
Автор: YOSHITOME MASAHIRO
Принадлежит:

PROBLEM TO BE SOLVED: To provide a surface treatment agent and a pattern forming method using the surface treatment agent for a freezing process for performing chemical treatment to a first resist pattern to satisfy requirements that the first resist pattern does not dissolve into a second resist solution, the dimensions of the first resist pattern do not change and furthermore the dry etching resistance of the first resist pattern and that of the second resist pattern are the same in the freezing process wherein chemical treatment is performed to the first resist pattern to change properties so that the first resist pattern does not dissolve into the second resist solution in order to form a second resist film on the first resist pattern to form the second resist pattern after forming the first resist pattern on a first resist film. SOLUTION: The surface treatment agent for forming the pattern contains a specific compound having an amino group and an aromatic ring, and the pattern forming ...

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13-10-2011 дата публикации

ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND PATTERN FORMING METHOD USING THE SAME

Номер: JP2011203505A
Принадлежит:

PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition which improves exposure latitude, depth of focus and pattern shape and to suppress standing waves, and a pattern forming method using the same. SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition comprises: a resin (P) comprising a repeating unit (A) having a structural moiety (S1) which is decomposed by the action of an acid to thereby generate an alkali-soluble group, and a structural moiety (S2) which is decomposed by the action of an alkali developer to thereby exhibit an increased dissolution rate in the alkali developer; and a compound (Q) represented by any one of general formulae (1) to (5). COPYRIGHT: (C)2012,JPO&INPIT ...

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27-10-2011 дата публикации

ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND PATTERN FORMING METHOD USING THE SAME

Номер: JP2011215414A
Принадлежит:

PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition excellent in coating defect performance, coating film thickness uniformity, and PEBS performance, and provide a pattern forming method using the composition. SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition includes a structure part (S1) that is decomposed by action of acid to generate alkaline soluble group, resin (P) containing a repeating unit (A) having a structure part (S2) that is decomposed by action of alkali developing solution to increase the dissolution rate into the alkali developing solution, compound for generating acid by irradiation of active light or radiation, and a solvent. At least one kind of solvents listed in the following X group and Y group is contained. The X group includes alkylene glycol monoalkyl ethers, alkyl lactate esters, alkoxy acetic acid alkyls, alkoxy propionic acid alkyls, pyruvic acid alkyls, and acetic acid alkyl ester. The ...

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06-11-2008 дата публикации

SURFACE-TREATING AGENT FOR PATTERN FORMATION AND PATTERN-FORMING METHOD USING SURFACE-TREATING AGENT

Номер: JP2008268855A
Принадлежит:

PROBLEM TO BE SOLVED: To provide a surface-treating agent for a freezing process, the freezing process comprising forming a first resist pattern on a first resist film, and then forming a second resist film on the first resist pattern to form a second resist pattern thereon, and subjecting the first resist pattern to chemical treatment to thereby change the property of the first resist pattern so as not to dissolve in a second resist solution, to provide the surface-treating agent for the chemical treatment of the first resist pattern in the freezing process so as to satisfy requirements that the first resist pattern does not dissolve in the second resist solution, that the dimension of the first resist pattern does not vary, and further, that the dry etching resistances of the first resist pattern and the second resist pattern are the same, and to provide a pattern-forming method using the surface-treating agent. SOLUTION: The surface-treating agent for pattern formation contains a specific ...

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29-09-2011 дата публикации

ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME

Номер: JP2011191731A
Принадлежит:

PROBLEM TO BE SOLVED: To provide an actinic-ray- or radiation-sensitive resin composition that excels in the roughness characteristics, exposure latitude, depth of focus, and development defect performance and that allows to form a pattern of favorable configuration, and to provide a method of forming a pattern using the composition. SOLUTION: The actinic-ray- or radiation-sensitive resin composition comprises a resin containing a repeating unit (A) containing both a structural moiety (S1) that is decomposed by an action of an acid to thereby generate an alkali-soluble group and a structural moiety (S2) that is decomposed by an action of an alkali developer to thereby increase its rate of dissolution into the alkali developer, and a compound that generates an acid by irradiation with actinic rays or radiation. COPYRIGHT: (C)2011,JPO&INPIT ...

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07-05-2009 дата публикации

NEGATIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME

Номер: JP2009098606A
Принадлежит:

PROBLEM TO BE SOLVED: To solve the problems of the performance improving technique of microphotofabrication using far-ultraviolet light, particularly ArF excimer laser light of 193 nm wavelength, specifically to provide a negative resist composition which, even in fine pattern formation, avoids pattern collapse and exhibits good resolution, and to provide a pattern forming method using the composition. SOLUTION: The negative resist composition includes (A) an alkali-soluble resin, (B) a compound having a radical polymerizable group, and (C) a photoradical generator. The pattern forming method using the composition is also provided. COPYRIGHT: (C)2009,JPO&INPIT ...

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19-01-2012 дата публикации

ACTINIC RAY SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME

Номер: JP2012013834A
Принадлежит:

PROBLEM TO BE SOLVED: To provide an actinic ray sensitive or radiation sensitive resin composition that excels in roughness property, exposure latitude, depth of focus and development defect performance and that allows to form a fine isolated line pattern of favorable shape, and to provide a pattern forming method using the same. SOLUTION: An actinic ray sensitive or radiation sensitive resin composition contains a resin (P) including a repeating unit (A) comprising a structure moiety (S1) which is decomposed by action of an acid to generate an alkali soluble group and a structure moiety (S2) which is decomposed by action of an alkali developer to increase the dissolution rate in the alkali developer, where the content of the repeating unit (A) is less than 30 mol% based on the total repeating units in the resin. COPYRIGHT: (C)2012,JPO&INPIT ...

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05-10-2006 дата публикации

LACTIC ACID CYCLIC OLIGOMER HAVING CARBOXYMETHYL GROUP

Номер: JP2006265191A
Принадлежит:

PROBLEM TO BE SOLVED: To produce and isolate a lactic acid cyclic oligomer having a carboxymethyl group as a single compound and to provide a method for producing the oligomer. SOLUTION: The compound is represented by formula (1) {wherein, R represents a hydrogen atom or a protective group of carboxy group; and X represents a methyl group or a CH2COOR1 (wherein, R1 represents a hydrogen atom or a protective group of the carboxy group)}. COPYRIGHT: (C)2007,JPO&INPIT ...

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27-10-2011 дата публикации

PRODUCTION METHOD FOR LACTONE COMPOUND, PRODUCTION METHOD FOR ACTIVE LIGHT RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, COMPOSITION OBTAINED BY THIS METHOD, AND FORMING METHOD FOR RESIST FILM AND PATTERN USING THIS COMPOSITION

Номер: JP2011213840A
Принадлежит:

PROBLEM TO BE SOLVED: To provide a production method capable of obtaining a lactone compound containing an acid-degradable group with a high yield, and a production method for an active light ray-sensitive or radiation-sensitive resin composition in which resist performance is improved. SOLUTION: This production method is a production method for a compound represented by formula (IB) below using a compound represented by formula (IA) below. (formulas (IA) and (IB)) (where Q represents a polymerizable group; L1s are independently a linking group when m is 2 or more; Lc represents a group having a lactone structure; A1 represents a group eliminated by an action of an acid or a group having a group generating an alkali soluble group by being degraded by an action of an acid; and m represents an integer of 0 or more). COPYRIGHT: (C)2012,JPO&INPIT ...

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05-02-2009 дата публикации

SURFACE TREATING AGENT FOR PATTERN FORMATION AND METHOD FOR FORMING PATTERN USING THE TREATING AGENT

Номер: JP2009025815A
Принадлежит:

PROBLEM TO BE SOLVED: To provide a surface treating agent for a freezing process and a method for forming a pattern using the surface treating agent, wherein the freezing process comprises, after a first resist pattern is formed on a first resist film, chemically treating the first resist pattern to change properties of the pattern not to be dissolved in a second resist liquid so as to form a second resist film on the first resist pattern to form a second resist pattern, and the surface treating agent for the freezing process is used for the chemical treatment on the first resist pattern to satisfy such requirements that the first resist pattern is not dissolved in the second resist liquid, that the first resist pattern shows no dimensional change, and further, that the first resist pattern and the second resist pattern have the same dry etching durability. SOLUTION: The surface treating agent for pattern formation contains a specified compound having an amino group and an aromatic ring ...

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22-09-2011 дата публикации

ACTIVE RAY SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, AND PATTERN FORMING METHOD USING THE SAME

Номер: JP2011186244A
Принадлежит: Fujifilm Corp

【課題】ラフネス特性、露光ラチチュード、焦点深度及び現像欠陥性能に優れ且つ良好な形状のパターンを形成可能とする感活性光線性又は感放射線性樹脂組成物、及びそれを用いたパターン形成方法を提供する。 【解決手段】本発明に係る感活性光線性又は感放射線性樹脂組成物は、酸の作用により分解してアルカリ可溶性基を発生する構造部位(S1)と、アルカリ現像液の作用により分解してアルカリ現像液中への溶解速度が増大する構造部位(S2)とを備えた繰り返し単位(A)を含んだ樹脂(P)と、波長193nmにおけるモル吸光係数が55000以下であり且つ活性光線又は放射線の照射により酸を発生する化合物(Q)とを含有している。 【選択図】 なし

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13-10-2011 дата публикации

ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME

Номер: JP2011203646A
Принадлежит:

PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition which improves a pattern shape and exposure latitude and reduces bridge defects, and a pattern forming method using the same. SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition comprises: a resin (P) comprising a repeating unit (A) having a structural moiety (S1) which is decomposed by the action of an acid to thereby generate an alkali-soluble group, and a structural moiety (S2) which is decomposed by the action of an alkali developer to thereby exhibit an increased dissolution rate in the alkali developer; and a compound (PDA) which has a proton accepting functional group and is decomposed upon irradiation with actinic rays or radiation to thereby generate a compound having reduced or lost proton accepting ability or having acidity turned from proton accepting ability. COPYRIGHT: (C)2012,JPO&INPIT ...

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15-10-2009 дата публикации

NEGATIVE RESIST COMPOSITION AND METHOD FOR FORMING PATTERN USING THE SAME

Номер: JP2009237378A
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PROBLEM TO BE SOLVED: To provide a negative resist composition exhibiting excellent sensitivity, pattern profile and defocus latitude, and to provide a method for forming a pattern. SOLUTION: The negative resist composition contains (A) an alkali-soluble resin having a repeating unit (a1), containing an alkali-soluble group in organic groups having a sulfonamide structure, organic groups having sulfonimide structure, organic groups having a dicarbonylmethylene structure and organic groups having a naphthol structure, and (a2) a repeating unit having an epoxy structure; (B) a compound having two or more epoxy structures in the molecule; and (C) a photo-acid generator. COPYRIGHT: (C)2010,JPO&INPIT ...

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26-02-2009 дата публикации

SURFACE TREATING AGENT FOR PATTERN FORMATION AND PATTERN FORMING METHOD USING THE SURFACE-TREATING AGENT

Номер: JP2009042749A
Автор: YOSHITOME MASAHIRO
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PROBLEM TO BE SOLVED: To provide a surface treating agent for a freezing process for performing the chemical treatment for a first resist pattern to satisfy the requirements that the first resist pattern is not dissolved in a second resist solution, the dimensions of the first resist pattern do not change, and the first resist pattern and the second resist pattern have the same dry etching resistance, in the freezing process in which after the first resist pattern is formed, in order to form a second resist pattern by forming the second resist film on the first resist pattern, chemical treatment is performed for the first resist pattern to thereby change the property of the first resist pattern not to dissolve in a second resist solution, and to provide a pattern forming method using it. SOLUTION: The surface treating agent for pattern formation contains a specified compound having an amino group and an aromatic ring, and the pattern forming method uses the surface treating agent. COPYRIGHT ...

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15-10-2009 дата публикации

NEGATIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN USING THE SAME

Номер: JP2009237170A
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PROBLEM TO BE SOLVED: To solve problems relating to technology for improving the performance in micro-photofabrication using far-UV light, particularly, an ArF excimer laser at a wavelength of 193 nm, and more specifically, to provide a negative resist composition excelling in a pattern shape and defocus latitude, and to provide a method for forming a resist pattern that uses the composition. SOLUTION: The negative resist composition contains (A) an alkali-soluble resin having a repeating unit including a specified sulfonamide group; (B) a compound that crosslinks the alkali-soluble resin by the action of an acid; and (C) a compound that generates an acid by irradiation with active rays or radiation. The method for forming a resist pattern that uses the composition is alos disclosed. COPYRIGHT: (C)2010,JPO&INPIT ...

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22-10-2009 дата публикации

NEGATIVE TYPE RESIST COMPOSITION AND PATTERN FORMING METHOD

Номер: JP2009244779A
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PROBLEM TO BE SOLVED: To provide a negative type resist composition which is used to manufacture a circuit board of a semiconoductor element such as an IC, a liquid crystal display device, a thermal head, etc., and further for lithography processes of other photofabrication, and is not apt to have film reduction and pattern collapse, and a pattern forming method. SOLUTION: Disclosed is the negative type resist composition containing (A) an alkali-soluble resin, (B) a cross-linking agent cross-linking the alkali-soluble resin through reaction of an acid, (C) a compound advancing cross-linking reaction by irradiation with an active light beam or radiation, and (D) a compound having a cation polymerizable group; and the pattern forming method. COPYRIGHT: (C)2010,JPO&INPIT ...

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15-10-2009 дата публикации

NEGATIVE RESIST COMPOSITION AND METHOD FOR FORMING PATTERN

Номер: JP2009237172A
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PROBLEM TO BE SOLVED: To provide a negative resist composition excelling in pattern shape having a wide defocus latitude, and to provide a method for forming a pattern. SOLUTION: The negative resist composition contains (A) an alkali-soluble resin, (B) a compound that crosslinks by the action of an acid, and (C) a photo-acid generator, wherein the alkali-soluble resin (A) contains a repeating unit, having a naphthol structure expressed by general formula (NH2) and a repeating unit having an alicyclic structure. COPYRIGHT: (C)2010,JPO&INPIT ...

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15-10-2009 дата публикации

NEGATIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN USING THE SAME

Номер: JP2009237171A
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PROBLEM TO BE SOLVED: To solve problems relating to technology for improving performances in micro-photofabrication using far UV light, particularly, an ArF excimer laser at a wavelength of 193 nm, and more concretly, to provide a negative resist composition excelling in a pattern shape and defocus latitude, and to provide a method for forming a resist pattern that uses the composition. SOLUTION: The negative resist composition contains (A) an alkali-soluble resin having a repeating unit including a specified sulfonimide group; (B) a compound that crosslinks the alkali-soluble resin by the action of an acid; and (C) a compound that generates an acid by irradiation with active rays or radiation. The method for forming a resist pattern that uses the composition is also disclosed. COPYRIGHT: (C)2010,JPO&INPIT ...

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25-04-2013 дата публикации

感活性光線性又は感放射線性樹脂組成物、並びにそれを用いた感活性光線性又は感放射線性膜及びパターン形成方法

Номер: JP2013076946A
Принадлежит: Fujifilm Corp

【課題】パターン倒れの抑制およびラインエッジラフネスの改善を可能とする感活性光線性又は感放射線性樹脂組成物、並びにそれを用いた感活性光線性又は感放射線性膜及びパターン形成方法を提供する。 【解決手段】感活性光線性又は感放射線性樹脂組成物は、(A)下記一般式(1)で表される繰り返し単位および酸の作用により分解してアルカリ可溶性基を生じる繰り返し単位を含む樹脂と、(B)活性光線又は放射線の照射により酸を発生する化合物とを含有する 一般式(1)中、Lは、2価の連結基を表し;R 1 は、水素原子またはアルキル基を表し;Zは、環状酸無水物構造を表す。 【選択図】なし

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09-05-2013 дата публикации

感活性光線性又は感放射線性樹脂組成物、該組成物を用いた感活性光線性又は感放射線性膜及びパターン形成方法、並びに電子デバイスの製造方法及び電子デバイス

Номер: JP2013083971A
Принадлежит: Fujifilm Corp

【課題】露光ラチチュード、及びLWRなどのパターンラフネス特性に優れ、経時による性能の変動が少ない感放射線性樹脂組成物、それを用いた感放射線性膜及びパターン形成方法、並びに電子デバイスの製造方法及び電子デバイスを提供する。 【解決手段】放射線の照射により分解して酸を発生させる下記一般式(1)で表される化合物、及び酸の作用により分解してアルカリ現像液に対する溶解度が増大する樹脂を含有する感放射性樹脂組成物。一般式(1)中、R 1 及びR 2 は、各々独立に、アリールを表し、R 1 とR 2 が連結していてもよい。R 3 及びR 4 は、各々独立に、水素原子、アルキル基、シクロアルキル基、アルケニル基、又はアリール基を表す。また、R 3 とR 4 が連結していてもよい。R 5 は、アルキル基、シクロアルキル基、アルケニル基、アリール基、アラルキル基、又はアルキルカルボニル基を表す。R 5 は、R 3 もしくはR 4 と連結していてもよい。 【選択図】なし

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