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Применить Всего найдено 4. Отображено 4.
01-08-2023 дата публикации

Semiconductor structure and manufacturing method thereof

Номер: CN116525577A
Автор: WU SHAN, YOU YONGXI
Принадлежит:

The invention discloses a semiconductor structure and a manufacturing method thereof, and belongs to the technical field of semiconductor manufacturing. The semiconductor structure at least comprises a semiconductor layer; the aluminum metal layer is formed on the semiconductor layer, and a plurality of convex parts are formed on the surface of the aluminum metal layer; and the reaction layer is arranged on the aluminum metal layer, the reaction layer covers the convex part, and after annealing, the reaction layer reacts with the aluminum metal layer to form a fusion layer. According to the semiconductor structure and the manufacturing method thereof provided by the invention, the performance of the semiconductor structure can be improved.

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Номер записи: 1
27-06-2023 дата публикации

Manufacturing method of semiconductor device and semiconductor device

Номер: CN116344364A
Автор: LI YUAN, YOU YONGXI
Принадлежит:

The invention provides a manufacturing method of a semiconductor device and the semiconductor device. The method comprises the following steps: firstly, providing a substrate comprising a substrate and a gate structure located on the substrate; then, a preparation metal layer and a protection layer which are stacked in sequence are formed on the exposed surface of the substrate and the exposed surface of the gate structure, a preparation structure is obtained, preset elements are arranged in the protection layer, and the proportion of the preset elements in the protection layer is gradually increased in the direction, away from the substrate and the gate structure, of the protection layer; and finally, performing pre-treatment on the preparation structure, so that the preparation metal layer forms a metal layer, and the pre-treatment comprises annealing treatment. Since the proportion of the predetermined element is gradually increased along the direction of the protection layer away from ...

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Номер записи: 2
11-04-2023 дата публикации

Semiconductor structure and manufacturing method thereof

Номер: CN115954324A
Автор: GAO ZHIJIE, YOU YONGXI, WU QIMING, HUANG ZHENLIN, ZHENG ZHICHENG
Принадлежит:

The invention discloses a semiconductor structure and a manufacturing method thereof, and belongs to the technical field of semiconductors. The semiconductor structure at least comprises a substrate, wherein a plurality of semiconductor devices are arranged in the substrate; the at least one dielectric layer is arranged on the substrate; the plurality of concave parts are arranged in the dielectric layer, the concave parts are connected with the semiconductor device, the side walls and the bottoms of the concave parts are provided with a plurality of layers of barrier structures, and the number of layers of the barrier structures on the bottoms of the concave parts is smaller than the number of layers of the barrier structures on the side walls of the concave parts; and the metal layer is arranged in the concave part. According to the semiconductor structure and the manufacturing method thereof provided by the invention, the reliability and the performance of the semiconductor structure ...

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Номер записи: 3
21-04-2023 дата публикации

Preparation method of semiconductor structure

Номер: CN115995382A
Автор: YANG SONGLING, YOU YONGXI
Принадлежит:

The invention relates to a preparation method of a semiconductor structure. The preparation method comprises the steps of providing a substrate; forming a first dielectric layer on the substrate, and forming a trench in the first dielectric layer; forming a first work function metal material layer on the bottom of the groove, the side wall of the groove and the first dielectric layer; the first work function metal material layer comprises an overhanging structure, and the overhanging structure is located at the top edge of the side wall of the groove; removing a part of the first work function metal material layer on the first dielectric layer to form a first work function metal layer reserved at the bottom of the groove and on the side wall of the groove; in the removal process, the overhang structures are removed at the same time. Therefore, a hole can be prevented from being formed when the metal gate is filled subsequently, the loss of the electrical property and yield of the formed ...

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Номер записи: 4