PHOTO-CROSSLINKABLE MATERIAL FOR ORGANIC THIN FILM TRANSISTOR INSULATING LAYER

A problem of the present invention is to provide an organic thin film transistor insulating layer material which is capable of forming a cross-linked structure without conducting a treatment at higher temperature, and which enables an organic thin film transistor to have a small absolute value of threshold voltage (Vth) when it is used for the formation of a gate insulating layer. The means for solving the problem is an organic thin film transistor insulating layer material including a macromolecular compound that has a repeating unit having a group containing a fluorine atom and a repeating unit having a photodimerization-reactive group. 2. The organic thin film transistor insulating layer material according to claim 1 , wherein claim 1 , in Formula (1) claim 1 , Rrepresents a hydrogen atom or a methyl group; R represents a hydrogen atom; Rf represents a fluorine atom; a represents 0; and b represents an integer of 3 to 5.3. The organic thin film transistor insulating layer material according to wherein claim 1 , in Formula (2) claim 1 , Rrepresents a hydrogen atom or a methyl group; R′ represents a hydrogen atom; c represents 0; d represents 1; and X represents a chlorine atom claim 1 , a bromine atom or an iodine atom.4. The organic thin film transistor insulating layer material according to claim 1 , wherein the macromolecular compound further has claim 1 , as a repeating unit claim 1 , an ethylene moiety including an aryl group or a phenyl group.5. The organic thin film transistor insulating layer material according to claim 1 , wherein the macromolecular compound has a molar fraction of the repeating unit represented by Formula (2) of from 0.01 to 0.95.6. A method for forming an organic thin film transistor insulating layer comprising the steps of:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'applying a liquid containing the organic thin film transistor insulating layer material according to onto a substrate to form a coat layer; and'}irradiating the coat ...

ORGANIC SURFACE PROTECTIVE LAYER COMPOSITION AND METHOD FOR PROTECTING ORGANIC SURFACE

The problem to be solved by the present invention is to provide such an organic surface protective layer composition that a thin and uniform protective layer can be formed on a surface of an organic layer, that the formed protective layer can easily be removed by etching, and that it can inhibit the alteration of the organic compound presenting in the surface of the organic layer exposed by the etching. Means for solving the problem is an organic surface protective layer composition containing (A) a metal alkoxide, (B) a stabilizer for the metal alkoxide and (C) an organic solvent capable of dissolving the metal alkoxide. 1. An organic surface protective layer composition comprising (A) a metal alkoxide , (B) a stabilizer for the metal alkoxide and (C) an organic solvent capable of dissolving the metal alkoxide.2. The organic surface protective layer composition according to claim 1 , wherein the metal alkoxide is a tungsten alkoxide.3. The organic surface protective layer composition according to claim 1 , wherein the stabilizer for the metal alkoxide is one or more compounds selected from the group consisting of α-hydroxy ketones claim 1 , α-hydroxy ketoimines claim 1 , ethanolamines claim 1 , α-diketones claim 1 , α-diketoimines claim 1 , β-diketones and α-hydroxycarboxylic acids.4. The organic surface protective layer composition according to claim 1 , wherein the organic solvent is an organic solvent having a fluorine atom.5. The organic surface protective layer composition according to claim 4 , wherein the organic solvent having a fluorine atom is an aromatic compound having a fluorine atom.6. A method for protecting a surface of an organic substance claim 4 , the method comprising the steps of:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'applying the organic surface protective layer composition according to onto a surface of an organic substance;'}curing the metal alkoxide contained in the organic surface protective layer composition by a sol-gel ...

OPTICAL AND THERMAL ENERGY CROSS-LINKABLE INSULATING LAYER MATERIAL FOR ORGANIC THIN FILM TRANSISTOR

The problem of the present invention is to provide an organic thin film transistor insulating layer material capable of producing an organic thin film transistor having a small absolute value of threshold voltage and small hysteresis. The means for solving the problem is an organic thin film transistor insulating layer material comprising a macromolecular compound (A) containing repeating units having a fluorine atom-containing group, repeating units having a photodimerizable group and repeating units having a first functional group that generates a second functional group which reacts with active hydrogen by the action of electromagnetic waves or heat, and an active hydrogen compound (B). 5. The organic thin film transistor insulating layer material according to claim 1 , wherein the first functional groups are groups of at least one member selected from the group consisting of an isocyanato group blocked with a blocking agent and an isothiocyanato group blocked with a blocking agent.8. A method for forming an insulating layer of an organic thin film transistor comprising the steps of:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'applying a liquid containing the organic thin film transistor insulating layer material according to onto a substrate to form an applied layer on the substrate;'}irradiating the applied layer with light or electron beams to dimerize a functional group which absorbs optical energy or electron beam energy to cause a dimerization reaction in a macromolecular compound (A); andapplying electromagnetic waves or heat to the applied layer to generate a second functional group from a first functional group of the macromolecular compound (A) and reacting the second functional group with an active hydrogen-containing group of an active hydrogen compound (B).9. The method for forming an insulating layer of an organic thin film transistor according to claim 8 , wherein the light is ultraviolet light.10. An organic thin film transistor having an ...

Organic thin-film transistor insulating layer material

An object of the invention is to provide an organic thin film transistor insulating layer material which can be used to produce organic thin film transistors having a small absolute value of threshold voltage and low hysteresis. The solution to the problem is an organic thin film transistor insulating layer material including a macromolecular compound (A) which contains a repeating unit having a cyclic ether structure and a repeating unit having an organic group capable of being detached by an acid.

ELECTRONIC DEVICE INSULATING LAYER, AND METHOD FOR PRODUCING ELECTRONIC DEVICE INSULATING LAYER

An object of the present invention is to provide an electronic device insulating layer which may improve characteristics of an electronic device. The means for solving the object is an electronic device insulating layer comprising a first insulating layer formed from a first insulating layer material and a second insulating layer formed on the first insulating layer from a second insulating layer material, the first insulating layer material being an insulating layer material comprising a photosensitive resin material (A), a tungsten (V) alkoxide (B) and a basic compound (C), the second insulating layer material being an insulating layer material comprising a polymer compound (D) which contains a repeating unit containing a cyclic ether structure and a repeating unit having an organic group capable of producing a phenolic hydroxyl group by the action of an acid. 2. The electronic device insulating layer according to claim 1 , wherein said first insulating layer material further comprises a basic compound (C).3. The electronic device insulating layer according to claim 1 , wherein said photosensitive resin material (A) is a positive photosensitive resin material (A-1) or a negative photosensitive resin material (A-2).5. The electronic device insulating layer according to claim 4 , wherein said first functional group is at least one group selected from the group consisting of an isocyanato group blocked with a blocking agent and an isothiocyanato group blocked with a blocking agent.10. The electronic device insulating layer according to claim 8 , wherein said polymer compound (G) contains at least one repeating unit selected from the group consisting of repeating units containing a first functional group defined below.first functional group: a functional group capable of affording, by the action of electromagnetic waves or heat, a second functional group capable of reacting with active hydrogen.11. The electronic device insulating layer according to claim 1 , wherein ...

POLYMER COMPOUND, COMPOSITION, INSULATING LAYER, AND ORGANIC THIN FILM TRANSISTOR

Provided is an organic thin film transistor having a high carrier mobility. Provided is a polymer compound, including: a repeating unit represented by the following formula (1); and at least two repeating units, the repeating units being at least one selected from the group consisting of a repeating unit having a blocked isocyanato group and a repeating unit having a blocked isothiocyanato group, 4. A composition claim 1 , comprising the polymer compound according to .5. The composition according to claim 4 , further comprising at least one compound selected from the group consisting of a low molecular compound comprising at least two active hydrogens and a polymer compound comprising at least two active hydrogens.6. A cured film of the composition according to .7. An electronic device claim 6 , comprising the film according to .8. The electronic device according to claim 7 , wherein the electronic device is an organic thin film transistor.9. An organic thin film transistor claim 6 , comprising the film according to as a gate insulating layer. The present invention relates to a polymer compound to be used for insulating layers such as a gate insulating layer of an organic thin film transistor, a composition comprising the polymer compound, and an insulating layer and an organic thin film transistor using the polymer compound or the composition.Organic thin film field effect transistors (organic thin film transistors) using an organic material ran he manufactured by a manufacturing process at lower temperatures than inorganic field effect transistors using an inorganic material. Therefore, a plastic substrate or a plastic film can be used as a substrate of an organic thin film transistor, and this allows the manufacturing of a transistor that is lighter in weight and more resistant to breakage.In some cases, an organic thin film transistor can be manufactured by applying and printing of a liquid (a solution, a dispersion liquid) comprising an organic material. In ...

COMPOSITION AND ORGANIC FILM TRANSISTOR USING THE SAME

A composition comprising a polymer compound (A) containing a repeating unit having a group represented by the formula (1), a compound (B) decomposing to generate an acid by irradiation with an electromagnetic wave or an electronic beam or by heating, and a compound (C) reacting with a hydroxyl group in the presence of an acid: 3. The composition according to claim 1 , wherein the compound (B) is a sulfonic acid ester compound claim 1 , a triazine compound claim 1 , a sulfonium salt or an iodonium salt.4. The composition according to claim 1 , wherein the compound (C) is a melamine compound or a urea compound.5. The composition according to claim 1 , further comprising a solvent.6. A method of producing a film claim 5 , comprising a step of applying the composition according to on a substrate claim 5 , to form a film claim 5 , a step of irradiating a part or several parts of the film with an electromagnetic wave or an electronic beam claim 5 , a step of developing the part or several parts of the film irradiated with an electromagnetic wave or an electronic beam claim 5 , thereby patterning the film claim 5 , and a step of heating the patterned film claim 5 , thereby cross-linking a compound contained in the film.7. A method of producing a film claim 5 , comprising a step of applying the composition according to on a substrate claim 5 , to form a film claim 5 , a step of irradiating a part or several parts of the film with an electromagnetic wave or an electronic beam claim 5 , a step of developing the part or several parts of the film irradiated with an electromagnetic wave or an electronic beam claim 5 , thereby patterning the film claim 5 , and a step of irradiating the patterned film with an electromagnetic wave or an electronic beam claim 5 , then claim 5 , heating the film claim 5 , thereby cross-linking a compound contained in the film.8. The method of producing a film according to claim 6 , wherein the electromagnetic wave is ultraviolet radiation.9. A film ...

Insulation-layer material for electronic device, and electronic device

Insulating layer material comprising: polymer compound of a repeating unit containing a cyclic ether structure and a repeating unit of the formula: wherein R 5 represents a hydrogen atom or a methyl group; R b b represents a linking moiety which links the main chain of the polymer compound with a side chain of the polymer compound and optionally has a fluorine atom; R represents an organic group capable of being detached by an acid; R′ represents a hydrogen atom or a monovalent organic group having from 1 to 20 carbon atoms and optionally having a fluorine atom; the suffix b represents an integer of 0 or 1, and the suffix n represents an integer of from 1 to 5; when there are two or more Rs, they may be the same or different; and when there are two or more R's, they may be the same or different; and tungsten (V) alkoxide.

Polysilane, its production process and starting materials therefor

A polysilane is disclosed whose main chain skeleton has a repeating unit represented by the general formula (1): ##STR1## wherein R 1 represents a substituted or unsubstituted alkyl cycloalkyl, aryl or aralkyl group; X is a atom having an unpaired electron or a group containing an atom having an unpaired electron and represents an oxygen atom, sulfer atom or a nitrogen atom-containing group represented by the general formula (2): ##STR2## wherein R 2 represents a substituted or unsubstituted alkyl, cycloalkyl, aryl or aralkyl group; Ar 1 represents a substituted or unsubstituted arylene group; and Ar 2 represents a substituted or unsubstituted aryl group, a group having an aromatic amine skeleton or a group ethenylene skeleton; a process for producing the polysilane; and a dihalosilane which is the starting material therefor. The polysilane compound has an excellent moldability as a high polymeric material and a higher hole drift mobility as a hole transporting material.

Polysilanes

A polysilane is claimed whose main chain skeleton has a repeating unit represented by the general formula (1): wherein R 1 represents a substituted or unsubstituted alkyl group; X represents a nitrogen atom-containing group represented by the general formula (2): wherein R 2 represents a substituted or unsubstituted aryl group; Ar 1 represents a substituted or unsubstituted arylene group; and Ar 2 represents a substituted or unsubstituted aryl group. Compounds (1) are prepared from dihalosilane which is also claimed. Polysilanes (1) have an excellent moldability as a higher polymeric material and a higher hole drift mobility as a hole transporting material.

Optical-energy crosslinkable organic thin film transistor insulation layer material, overcoat insulation layer and organic thin film transistor

Composition for insulation layer of organic thin film transistor and organic thin film transistor

Silicon containing compound and organic electroluminescent device in which it is used.

Organic thin film transistor, method for making an organic thin film transistor, display component using such orgainc thin film transistor, and the display

Silicon-containing compound and organic electroluminescence device using the same

The invention provides a novel silicon-containing compound having an oxidation potential of 0.3 to 1.5 V on the basis of a standard hydrogen electrode, wherein at least one alkoxy group is bonded to a silicon atom and at least one aromatic amine group is also bonded to the silicon atom. An organic electroluminescence device having excellent mechanical and electric contact between an electrode and an organic layer is also provided by treating the surface of an anode with using a surface-treating agent comprising the above silicon-containing compound.

Alkali-soluble siloxane polymer, positive type resist composition, resist pattern, process for forming the same, electronic device and process for manufacturing the same

A positive type resist composition having an alkali-soluble siloxane polymer expressed by the following Formula (1), a photosensitive compound, and a 1 μm thick resist film formed of the positive type resist composition which has 5% to 60% of transmittance to i-line radiation; in the Formula (1), R 1 and R 2 express a monovalent organic group, and may be identical or different; “A” is a group expressed by the following Formula (2) having at least one phenolic hydroxyl group; and “a”, “b,” and “c” satisfy the following relation; a+b+c=1, in the Formula (2), R 3 , R 4 , and R 5 express one of a hydrogen atom and a monovalent organic group, and may be identical or different, “m” expresses an integer, and “n” expresses an integer of 1 to 5. Preferably, 0.25≦a≦0.60, and 0≦c≦0.25. The composition is preferably used in a resist film undergoing oxygen plasma etching.

Photo-crosslinkable material for organic thin film transistor insulating layer

A problem of the present invention is to provide an organic thin film transistor insulating layer material which is capable of forming a cross-linked structure without conducting a treatment at higher temperature, and which enables an organic thin film transistor to have a small absolute value of threshold voltage (Vth) when it is used for the formation of a gate insulating layer. The means for solving the problem is an organic thin film transistor insulating layer material including a macromolecular compound that has a repeating unit having a group containing a fluorine atom and a repeating unit having a photodimerization-reactive group. Preferred examples of the group containing a fluorine atom include an aryl group in which a hydrogen atom has been substituted with a fluorine atom and an alkylaryl group in which a hydrogen atom has been substituted with a fluorine atom, and particularly a phenyl group in which a hydrogen atom has been substituted with a fluorine atom and an alkylphenyl group in which a hydrogen atom has been substituted with a fluorine atom. Preferred examples of the photodimerization-reactive group include an aryl groups in which a hydrogen atom has been substituted with a halomethyl group, and particularly a phenyl group in which a hydrogen atom has been substituted with a halomethyl group.

Organic thin film transistor insulation layer material

本發明之課題為提供可製造閾值電壓的絕對值及滯後現象小之有機薄膜電晶體的有機薄膜電晶體絕緣層材料。課題之解決手段為一種有機薄膜電晶體絕緣層材料，係含有：在分子內含有苄基硫胺甲酸酯基(-Ph-CH2-SCSNR2)之高分子化合物(A)、及在分子內含有2個以上不飽和雙鍵之不飽和雙鍵化合物(B)。

Organic thin film transistor, method for manufacturing the same, display member using the organic thin film transistor, and display

Composition for organic thin film transistor insulation layer containing fluoro-organic compound

Organic thin-film transistor insulating layer material

An object of the invention is to provide an organic thin film transistor insulating layer material which can be used to produce organic thin film transistors having a small absolute value of threshold voltage and low hysteresis. The solution to the problem is an organic thin film transistor insulating layer material including a macromolecular compound (A) which contains a repeating unit having a cyclic ether structure and a repeating unit having an organic group capable of being detached by an acid.

Composition for insulating layer

An object of the present invention is to provide a composition for an insulating layer, which can form the insulating layer (for instance, a gate insulating film and a protective layer of a transistor) at a low temperature, and further can form the insulating layer having superior withstand voltage. The composition for an insulating layer according to the present invention includes a first compound formed of a polymer compound having two or more active hydrogen groups in the molecule, and a second compound formed of a low-molecular compound having, in the molecule, two or more groups that produce a functional group which reacts with an active hydrogen group by electromagnetic radiations or heat.

有機薄膜電晶體絕緣層材料

發明的課題為提供一種可製造閾值電壓的絕對值及遲滯現象小之有機薄膜電晶體絕緣層材料。課題的解決手段為包含具有環狀醚構造的重複單元及具有可藉由酸脫離之有機基的重複單元之高分子化合物(A)之有機薄膜電晶體絕緣層材料。

Electronic device insulating layer, and method for producing electronic device insulating layer

An object of the present invention is to provide an electronic device insulating layer which may improve characteristics of an electronic device. The means for solving the object is an electronic device insulating layer comprising a first insulating layer formed from a first insulating layer material and a second insulating layer formed on the first insulating layer from a second insulating layer material, the first insulating layer material being an insulating layer material comprising a photosensitive resin material (A), a tungsten (V) alkoxide (B) and a basic compound (C), the second insulating layer material being an insulating layer material comprising a polymer compound (D) which contains a repeating unit containing a cyclic ether structure and a repeating unit having an organic group capable of producing a phenolic hydroxyl group by the action of an acid.

Photosensitive paste

Resin composition for intermediate layer of three-layer resist

Photosensitive paste

Composition for insulating layer