Multi-junction condensation gallium arsenide solar cell and manufacturing method thereof

The invention discloses a multi-junction condensation gallium arsenide solar cell and a manufacturing method of the multi-junction condensation gallium arsenide solar cell. According to the cell, a substrate is made of P type silicon carbide, a low-temperature P-GaAs buffer layer, a high-temperature P-GaAs buffer layer, a bottom cell, a middle cell, a top cell and an N++-GaAs contact layer are sequentially overlapped and arranged on the surface of the substrate from bottom to top, and tunnel junction connecting structures are arranged between the bottom cell and the middle cell and between the middle cell and the top cell respectively. Due to the fact that the P type silicon carbide substrate is made of broad-band gap semi-conductor materials and has a high heat conductivity coefficient in comparison with a germanium substrate and a gallium arsenide substrate, the stability and the long-term reliability of the cell can be improved under high-power condensation. In addition, the P-GaAs buffer ...