Настройки

Укажите год
-

Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

Подробнее
-

Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

Подробнее

Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Укажите год
Укажите год
Применить Всего найдено 36. Отображено 29.
13-07-2017 дата публикации

METHODS OF INSPECTING SUBSTRATES AND SEMICONDUCTOR FABRICATION METHODS INCORPORATING THE SAME

Номер: US20170200658A1
Автор: Yusin Yang, Kang-Woong Ko, Sung Yoon Ryu, Gil-Woo Song, Sangkil Lee, Chungsam Jun, HyoungJo Jeon, Masahiro Horie, YANG YUSIN, KO KANG-WOONG, RYU SUNG YOON, SONG GIL-WOO, LEE SANGKIL, JUN CHUNGSAM, JEON HYOUNGJO, HORIE MASAHIRO, Yang Yusin, Ko Kang-Woong, Ryu Sung Yoon, Song Gil-Woo, Lee Sangkil, Jun Chungsam, Jeon HyoungJo, Horie Masahiro
Принадлежит:

A method of inspecting a substrate includes irradiating light onto a substrate that has experienced a first process, obtaining spectral data of the light reflected from the substrate, detecting a defect region of the substrate from the spectral data, and extracting a first defect site that occurred in or during the first process from the defect region. Extracting the first defect site includes establishing an effective area where the first process affects the substrate, and extracting a superimposed area that is overlapped with the effective area from the defect region. The superimposed area is defined as the first defect site. 1. A method of fabricating a semiconductor device , the method comprising:performing a first process to a substrate; and irradiating light onto the substrate;', 'obtaining spectral data of the light reflected from the substrate;', 'detecting a defect region of the substrate from the spectral data; and', 'extracting a first defect site corresponding to the first process from the defect region, wherein extracting the first defect site comprises:', 'establishing an effective area in which the first process affects the substrate; and', 'extracting, from the defect region, a superimposed area that overlaps the effective area, wherein the superimposed area is defined as the first defect site., 'inspecting the substrate that has experienced the first process, wherein the inspecting the substrate comprises2. The method of claim 1 , wherein establishing the effective area comprises:acquiring a layout format with respect to the first process;establishing an effective parameter in the layout format;setting a threshold of the effective parameter; andestablishing an area whose effective parameter is above the threshold as the effective area on the substrate.3. The method of claim 2 , wherein the layout format includes a graphic design system (GDS) and the effective parameter includes a spectral density.4. The method of claim 1 , wherein detecting the ...

Подробнее
Номер записи: 1
13-02-2018 дата публикации

Fan-out panel level package and method of fabricating the same

Номер: US0009892980B2
Автор: Younghoon Sohn, Jinsung Kim, Yusin Yang, Chungsam Jun, SOHN YOUNGHOON, KIM JINSUNG, YANG YUSIN, JUN CHUNGSAM, Sohn Younghoon, Kim Jinsung, Yang Yusin, Jun Chungsam
Принадлежит: Samsung Electronics Co., Ltd., SAMSUNG ELECTRONICS CO LTD

A method of fabricating a package includes providing a mold substrate supporting dies in cavities of a fan-out substrate, detecting positions of the dies with respect to the fan-out substrate, and forming interconnection lines. At least one of the interconnection lines includes a first portion extending from the fan-out substrate to a target position on the cavity disposed between the fan-out substrate and one of the dies the one of the dies disposed at a detected position different from the target position, and a second portion extending from the one die to the fan-out substrate.

Подробнее
Номер записи: 2
28-02-2017 дата публикации

Method of manufacturing a semiconductor device using semiconductor measurement system

Номер: US0009583402B2
Автор: Sung Yoon Ryu, Wooseok Ko, Souk Kim, Yusin Yang, Sangkil Lee, Chungsam Jun, Kwanwoo Ryu, RYU SUNG YOON, KO WOOSEOK, KIM SOUK, YANG YUSIN, LEE SANGKIL, JUN CHUNGSAM, RYU KWANWOO, Ryu Sung Yoon, Ko Wooseok, Kim Souk, Yang Yusin, Lee Sangkil, Jun Chungsam, Ryu Kwanwoo
Принадлежит: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG ELECTRONICS CO LTD, Samsung Electronics Co., Ltd.

A method includes loading a substrate into a sensing chamber; while the substrate is in the sensing chamber, performing a spectral analysis of the substrate; transferring the substrate between the sensing chamber and a processing chamber coupled to the sensing chamber; processing the substrate in the processing chamber to form at least a first layer and/or pattern on the substrate; and based on at least the spectral analysis, determining whether a parameter resulting from the formation of first layer and/or pattern is satisfied.

Подробнее
Номер записи: 3
11-10-2016 дата публикации

Method of inspecting semiconductor device and method of fabricating semiconductor device using the same

Номер: US0009466537B2
Автор: Minkook Kim, Wooseok Ko, Yusin Yang, Sangkil Lee, Chungsam Jun, KIM MINKOOK, KO WOOSEOK, YANG YUSIN, LEE SANGKIL, JUN CHUNGSAM, Kim Minkook, Ko Wooseok, Yang Yusin, Lee Sangkil, Jun Chungsam
Принадлежит: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG ELECTRONICS CO LTD

A method of inspecting a semiconductor device includes providing a substrate, on which a mold layer with a plurality of mold openings is provided, milling the mold layer in a direction inclined at a predetermined angle with respect to a direction normal to a top surface of the substrate, such that an inclined cutting surface exposing milled mold openings is formed, the milled mold openings including first milling openings along a first column extending in a first direction and having different heights, obtaining image data of the cutting surface, the image data including first contour images of the first milling openings, and obtaining a first process parameter, which represents an extent of bending of the mold openings according to a distance from a top surface of the substrate, using positions of center points of the first contour images.

Подробнее
Номер записи: 4
27-09-2016 дата публикации

Semiconductor inspection system and methods of inspecting a semiconductor device using the same

Номер: US0009455121B2
Автор: Hyunwoo Kim, Wooseok Ko, Minkook Kim, Jung Hwan Kim, Yusin Yang, Sangkil Lee, Chungsam Jun, KIM HYUNWOO, KO WOOSEOK, KIM MINKOOK, KIM JUNG HWAN, YANG YUSIN, LEE SANGKIL, JUN CHUNGSAM, Kim Hyunwoo, Ko Wooseok, Kim Minkook, Kim Jung Hwan, Yang Yusin, Lee Sangkil, Jun Chungsam
Принадлежит: SAMSUNG ELECTRONICS CO., LTD., KIM HYUNWOO, KO WOOSEOK, KIM MINKOOK, KIM JUNG HWAN, YANG YUSIN, LEE SANGKIL, JUN CHUNGSAM, SAMSUNG ELECTRONICS CO LTD, Kim Hyunwoo, Ko Wooseok, Kim Minkook, Kim Jung Hwan, Yang Yusin, Lee Sangkil, Jun Chungsam

A semiconductor inspection system including an ion beam milling unit configured to irradiate at least one cluster-ion beam onto a surface of a sample wafer and etch the surface of the sample wafer and an image acquisition unit configured to irradiate an electron beam onto the etched surface of the sample wafer and acquire an image of the etched surface may be provided.

Подробнее
Номер записи: 5
23-03-2017 дата публикации

DATA COLLECTING/PROCESSING SYSTEM AND PRODUCT MANUFACTURING/ANALYZING SYSTEM INCLUDING THE SAME

Номер: US20170083587A1
Автор: YEONJUNG KIM, Sungeun EOM, Yujin Shin, Yusin Yang, KIM YEONJUNG, EOM SUNGEUN, SHIN YUJIN, YANG YUSIN, EOM Sungeun, Shin Yujin, Yang Yusin
Принадлежит: Samsung Electronics Co., Ltd.

A data collecting/processing system includes a recipe generator configured to define a plurality of recipes based on a user setting signal, each of the plurality of recipes representing one of data collecting schemes and data processing schemes; a register configured to store the plurality of recipes; and an execution part configured to perform a plurality of data collecting operations by obtaining data from an external system, configured to perform a plurality of data processing operations on the obtained data, and configured to provide results of the plurality of data processing operations to the external system, the plurality of data collecting operations and the plurality of data processing operations being performed based on the plurality of recipes and a plurality of job messages for a plurality of products treated by the external system.

Подробнее
Номер записи: 6
06-03-2014 дата публикации

METHODS AND APPARATUSES FOR INSPECTING SEMICONDUCTOR DEVICES USING ELECTRON BEAMS

Номер: US20140061462A1
Автор: Jeong Yong Deok, Lee Sangkil, PARK Mira, Sohn Younghoon, Yang Yusin
Принадлежит:

Methods and apparatuses for inspecting a semiconductor device using electron beam are provided. The methods may include performing detection operations on a detection target pattern N times and determining a number of detection operations which have been performed until a maximum secondary electron amount of the detection target pattern is obtained. Each of the detection operations may include irradiating the detection target pattern with an electron beam, interrupting the irradiating and detecting a secondary electron amount of the detection target pattern after a detection waiting time has elapsed since the interrupting the irradiating. 1. A method of inspecting a semiconductor device , the method comprising:obtaining a reference electron-decay time of a reference pattern;performing detection operations on a detection target pattern N times, wherein each of the detection operations comprises irradiating an electron beam to the detection target pattern, interrupting the electron beam and detecting a secondary electron amount of the detection target pattern at or after the reference electron-decay time has elapsed since the interrupting the electron beam; anddetermining a number of detection operations which have been performed until a maximum secondary electron amount of the detection target pattern is obtained.2. The method of claim 1 , further comprising:obtaining an electron-decay time of the detection target pattern,wherein the electron-decay time of the detection target pattern is greater than the reference electron-decay time of the reference pattern, and wherein a detection waiting time, which is a time interval between interrupting an electron beam and detecting a secondary electron amount of the detection target pattern in each of the detection operations, is less than the electron-decay time of the detection target pattern.3. The method of claim 2 , wherein a time interval between detecting a secondary electron amount of the detection target pattern of an ...

Подробнее
Номер записи: 7
04-01-2018 дата публикации

Inspection method, inspection system, and method of manufacturing semiconductor package using the same

Номер: US20180005369A1
Автор: Younghoon Sohn, Yusin Yang
Принадлежит: SAMSUNG ELECTRONICS CO LTD

An inspection method includes generating first layout data including information on a shape of a first pattern group, generating second layout data including information on a shape of a second pattern group, obtaining a target image including images of the first and second pattern groups, and detecting a defect pattern from the target image by comparing the first and second layout data with the target image. The first pattern group, the second pattern group, and the defect pattern are provided at different heights from each other, from a top surface of a substrate.

Подробнее
Номер записи: 8
28-01-2016 дата публикации

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING SEMICONDUCTOR MEASUREMENT SYSTEM

Номер: US20160027707A1
Автор: JUN Chungsam, KIM Souk, KO Wooseok, Lee Sangkil, RYU Kwanwoo, Ryu Sung Yoon, Yang Yusin
Принадлежит:

A method includes loading a substrate into a sensing chamber; while the substrate is in the sensing chamber, performing a spectral analysis of the substrate; transferring the substrate between the sensing chamber and a processing chamber coupled to the sensing chamber; processing the substrate in the processing chamber to form at least a first layer and/or pattern on the substrate; and based on at least the spectral analysis, determining whether a parameter resulting from the formation of first layer and/or pattern is satisfied. 1. A method of manufacturing a semiconductor device , the method comprising:loading a semiconductor substrate on a stage of a sensing chamber of a manufacturing chamber;performing a first measurement of the semiconductor substrate using a sensor of the sensing chamber;after performing the measurement, transferring the semiconductor substrate to a processing chamber of the manufacturing chamber;processing the semiconductor substrate in the processing chamber to form a layer and/or pattern on the semiconductor substrate;after the processing, transferring the semiconductor substrate back to the sensing chamber of the manufacturing chamber;performing a second measurement of the transferred semiconductor substrate using the sensor of the sensing chamber; anddetermining a difference between the first measurement and second measurement, and based on the difference, determining whether a particular parameter resulting from the formation of the layer and/or pattern is satisfied.2. The method of claim 1 , wherein the particular parameter relates to a thickness of the formed layer and/or pattern.3. The method of claim 1 , wherein each of the first measurement and second measurement includes performing a spectral analysis of light reflected by the semiconductor substrate.4. The method of claim 1 , wherein the semiconductor substrate is transferred between the sensing chamber and the processing chamber through an opened door disposed between the two ...

Подробнее
Номер записи: 9
25-01-2018 дата публикации

METHOD OF MEASURING MISALIGNMENT OF CHIPS, A METHOD OF FABRICATING A FAN-OUT PANEL LEVEL PACKAGE USING THE SAME, AND A FAN-OUT PANEL LEVEL PACKAGE FABRICATED THEREBY

Номер: US20180025949A1
Автор: Sohn Younghoon, Yang Yusin
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A method of measuring misalignment of chips, a method of fabricating a fan-out panel level package using the same, and a fan-out panel level package fabricated thereby are provided. The measuring method may include obtaining images by scanning chips on a substrate, obtaining absolute offsets of reference chips with respect to the substrate in the images, obtaining relative offsets of subordinate chips with respect to the reference chips in the images, and calculating misalignments of the chips based on the absolute offsets and the relative offsets. 1. A method of measuring misalignment of chips in a substrate , comprising:obtaining images by scanning the substrate and the chips, the chips being arranged in first and second directions in the substrate, the chips including first to n-th chips arranged in the first direction or the second direction;obtaining absolute offsets of reference chips with respect to the substrate in the images, the reference chips corresponding to k-th ones of the chips in the images and k being an integer greater than or equal to 1 and less than or equal to n;obtaining relative offsets of subordinate chips with respect to the reference chips in the images, the subordinate chips corresponding to the chips that are not reference chips among the chips; andcalculating misalignments of the chips based on the absolute offsets and the relative offsets.2. The method of claim 1 , whereinthe obtaining of the image includes scanning the chips in the first direction to obtain traverse images and scanning the chips in the second direction to obtain longitudinal images,the reference chips in the traverse images are traverse reference chips, which are arranged to form a reference column in the second direction,the subordinate chips in the traverse images are traverse subordinate chips, which are arranged to form columns other than the reference column,the reference chips in the longitudinal images are longitudinal reference chips, which are arranged to ...

Подробнее
Номер записи: 10
31-01-2019 дата публикации

SYSTEM AND METHOD OF INSPECTING SUBSTRATE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME

Номер: US20190033232A1
Автор: AHN JEONGHO, CHO HYUNGSUK, IHM DONGCHUL, LEE SEONGSIL, OH JAE-MAN, Yang Yusin
Принадлежит:

A substrate inspection system includes a substrate support, optics configured to irradiate a patterned structure on the substrate and capture images of the patterned structure from light reflected from the patterned structure, a focus adjustment operative to adjust a focal position of the incident light on the patterned structure, and an image processor configured to calculate an optimal value of a focus offset used to establish focal points of the light for defect detection in the patterned structure. The patterned structure may include a first pattern having an opening and a second pattern having top surfaces located at different heights relative to the substrate. The value of the focus offset is determined using images of the top surfaces of the second pattern obtained while changing the focal position of the incident light. 110-. (canceled)11. An inspection method for use in quality control of semiconductor devices , comprising:determining an optimal focus offset value;irradiating a layered structure on a substrate with incident light focused based on the optimal focus offset value, the layered structure comprising a first pattern having a top surface and an opening therein and a second pattern having top surfaces located at different heights relative to a top surface of the substrate, the opening extending in a direction perpendicular to a top surface of the substrate from the top surface of the first pattern;capturing an image of the layered structure from light reflected from the layered structure as a result of the irradiating of the layered structure; anddetecting for a defect in the layered structure using the captured image of the layered structure,wherein the determining of the optimal focus offset value comprises:capturing focus offset images each of a region of the layered structure including the top surfaces of the second pattern while changing a focal position of the incident light, whereby the focus offset images are captured at different focal ...

Подробнее
Номер записи: 11
22-02-2018 дата публикации

Method of inspecting semiconductor wafer, an inspection system for performing the same, and a method of fabricating semiconductor device using the same

Номер: US20180053292A1
Автор: Chungsam Jun, Jaehyung Ahn, Janghee Lee, Joonseo Song, Sung Yoon Ryu, Wahseng Yap, Yoo Jin Jeoung, Yunjung JEE, Yusin Yang
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A method of inspecting a semiconductor wafer is provided, the method includes scanning a plurality of inspection swaths on a wafer to obtain a plurality of image sets and producing a plurality of reference images from the plurality of image sets, respectively. The method of inspecting a semiconductor wafer further includes selecting a plurality of target images from the plurality of image sets, respectively. The method of inspecting a semiconductor wafer additionally includes comparing each reference image of the plurality of reference images with each target image of the plurality of target images to detect a defect image from each of the plurality of target images. A reference image being compared and a target image being compared are images scanned from the same inspection swath.

Подробнее
Номер записи: 12
24-03-2016 дата публикации

SEMICONDUCTOR INSPECTION SYSTEM AND METHODS OF INSPECTING A SEMICONDUCTOR DEVICE USING THE SAME

Номер: US20160086769A1
Автор: JUN Chungsam, KIM Hyunwoo, Kim Jung Hwan, KIM Minkook, KO Wooseok, Lee Sangkil, Yang Yusin
Принадлежит:

A semiconductor inspection system including an ion beam milling unit configured to irradiate at least one cluster-ion beam onto a surface of a sample wafer and etch the surface of the sample wafer and an image acquisition unit configured to irradiate an electron beam onto the etched surface of the sample wafer and acquire an image of the etched surface may be provided. 1. A semiconductor inspection system , comprising:an ion beam milling unit configured to irradiate at least one cluster-ion beam onto a surface of a sample wafer and etch the surface of the sample wafer; andan image acquisition unit configured to irradiate an electron beam onto the etched surface of the sample wafer and acquire an image of the etched surface.2. The system of claim 1 , wherein the ion beam milling unit is configured to irradiate a plurality of cluster-ion beams including the at least one cluster-ion beam claim 1 , the cluster-ion beams including a first cluster-ion beam and a second cluster-ion beam claim 1 , the first cluster-ion beam is used to etch the surface of the sample wafer claim 1 , andthe second cluster-ion beam has an energy lower than that of the first cluster-ion beam and is used to planarize the etched surface of the sample wafer.3. The system of claim 1 , wherein the image acquisition unit is a scanning electron microscope (SEM).4. The system of claim 1 , further comprising:a mass spectrometry unit configured to measure a mass spectrum of secondary electrons produced from the sample wafer, while the surface of the sample wafer is etched.5. The system of claim 4 , wherein the mass spectrometry unit is a quadrupole mass spectrometer.6. The system of claim 4 , further comprising:a vacuum chamber configured to accommodate the ion beam milling unit, the image acquisition unit, and the mass spectrometry unit therein.7. The system of claim 6 , further comprising:a stage in the vacuum chamber and configured to receive the sample waferwherein the image acquisition unit is over a ...

Подробнее
Номер записи: 13
05-04-2018 дата публикации

Fan-out panel level package and method of fabricating the same

Номер: US20180096903A1
Автор: Chungsam Jun, Jinsung Kim, Younghoon Sohn, Yusin Yang
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A method of fabricating a package includes providing a mold substrate supporting dies in cavities of a fan-out substrate, detecting positions of the dies with respect to the fan-out substrate, and forming interconnection lines. At least one of the interconnection lines includes a first portion extending from the fan-out substrate to a target position on the cavity disposed between the fan-out substrate and one of the dies the one of the dies disposed at a detected position different from the target position, and a second portion extending from the one die to the fan-out substrate.

Подробнее
Номер записи: 14
12-04-2018 дата публикации

Inspection method, inspection system, and method of fabricating semiconductor package using the same

Номер: US20180101940A1
Автор: Ilsoo Kim, Younghoon Sohn, Yusin Yang
Принадлежит: SAMSUNG ELECTRONICS CO LTD

Disclosed are an inspection method, an inspection system, and a method of fabricating a semiconductor package using the same. The inspection method comprises obtaining a reference value by measuring a surface profile of a reference pattern, scanning reference images of the reference pattern by using a plurality of optical inspection conditions, obtaining estimation values of the reference pattern that are measured from the reference images, selecting an desired optical inspection condition among the plurality of optical inspection conditions by comparing the reference value with the estimation values, scanning a target image of a target pattern by using the desired optical inspection condition, and obtaining an error value by quantitatively comparing the target image with a design image of the target pattern.

Подробнее
Номер записи: 15
13-05-2021 дата публикации

SUBSTRATE INSPECTION DEVICE

Номер: US20210140899A1
Автор: PARK Jangik, RYU Sungyoon, Sohn Younghoon, Yang Yusin
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

A substrate inspection device including a light source, a polarizer, first and second compensators, an analyzer, a light splitter configured to receive reflected light reflected by the substrate to split the reflected light into first split light and second split light, a first detector and a second detector configured to detect the first split light and the second split light, respectively, and a controller configured to control the first and second detectors differently from each other, may be provided. 1. A substrate inspection device comprising:a light source configured to irradiate non-polarized incident light onto a substrate;a polarizer between the light source and the substrate and configured to linearly polarize the incident light;a first compensator between the polarizer and the substrate;a light splitter configured to receive reflected light generated by the incident light reflected by the substrate, and split the reflected light into first split light and second split light;a second compensator between the substrate and the light splitter;an analyzer between the second compensator and the light splitter;a first detector and a second detector configured to detect the first split light and the second split light, respectively;a controller configured to control the first and second detectors; anda processor configured to process signals detected by the first and second detectors,wherein the controller is configured to rotate at least one of the polarizer, the first and second compensators, or the analyzer, andthe controller is configured to differently control the first and second detectors.2. The substrate inspection device of claim 1 , whereineach of the first and second detectors comprises a spectral imaging camera,the first detector is configured to generate a first spectral image at a first wavelength band, andthe second detector is configured to generate a second spectral image at a second wavelength band that is different from the first wavelength ...

Подробнее
Номер записи: 16
06-06-2019 дата публикации

Mass flow controller, apparatus for manufacturing semiconductor device, and method for maintenance thereof

Номер: US20190170563A1
Автор: Hyun Lee, Q-Han PARK, Sangkil Lee, Sung Yoon Ryu, Yusin Yang
Принадлежит: SAMSUNG ELECTRONICS CO LTD

Disclosed are mass flow controllers, apparatuses for manufacturing semiconductor devices, and methods of maintenance thereof. The mass flow controller may control an amount of a gas provided into a chamber. The mass flow controller may be configured to obtain an absolute volume of the gas provided into the chamber at a standard flow rate when the mass flow controller is initially used. The mass flow controller may be configured to obtain a detected flow rate of the gas provided at a measured flow rate after the mass flow controller has been used for a predetermined time. The mass flow controller may be configured to compare the detected flow rate and the standard flow rate to verify a full-scale error in the measured flow rate.

Подробнее
Номер записи: 17
04-06-2020 дата публикации

Method of inspecting semiconductor wafer, inspection system for performing the same, and method of fabricating semiconductor device using the same

Номер: US20200176292A1
Автор: Chihoon Lee, Joonseo Song, Souk Kim, Sung Yoon Ryu, Younghoon Sohn, Yusin Yang
Принадлежит: SAMSUNG ELECTRONICS CO LTD

Disclosed are methods of inspecting semiconductor wafers, inspection systems for performing the same, and methods of fabricating semiconductor devices using the same. A method of inspecting a semiconductor wafer including preparing a wafer including zones each having patterns, obtaining representative values for the patterns, scanning the patterns under an optical condition to obtain optical signals for the patterns, each of the optical signals including optical parameters, selecting a representative optical parameter that is one of the optical parameters that has a correlation with the representative values, obtaining a reference value of the representative optical parameter for a reference pattern, and obtaining a defect of an inspection pattern by comparing the reference value with an inspection value of the representative optical parameter for the inspection pattern.

Подробнее
Номер записи: 18
11-06-2020 дата публикации

MEASURING APPARATUS AND SUBSTRATE ANALYSIS METHOD USING THE SAME

Номер: US20200182783A1
Автор: JUN Sunhong, KIM Souk, Ryu Sung Yoon, Sohn Younghoon, Yang Yusin
Принадлежит:

Disclosed are a measuring apparatus and a substrate analysis method using the same. The measuring apparatus includes a light source that generates a laser beam, a beam splitter that splits the laser beam into a probe laser beam and a reference laser beam, an antenna that receives the probe laser beam to produce a terahertz beam, an electro-optical device that receives the reference laser beam and the terahertz beam to change a vertical polarization component and a horizontal polarization component of the reference laser beam, based on intensity of the terahertz beam, and a streak camera that obtains a time-domain signal corresponding to a ratio between the vertical polarization component and the horizontal polarization component. 1. A measuring apparatus , comprising:a light source that generates a laser beam;a beam splitter that splits the laser beam into a probe laser beam and a reference laser beam;an antenna that receives the probe laser beam to produce a terahertz beam;an electro-optical device that receives the reference laser beam and the terahertz beam and changes a vertical polarization component and a horizontal polarization component of the reference laser beam based on the terahertz beam; anda streak camera that obtains a time-domain signal corresponding to a ratio between the vertical polarization component and the horizontal polarization component.2. The measuring apparatus as claimed in claim 1 , wherein the reference laser beam has a beam diameter smaller than that of the terahertz beam.3. The measuring apparatus as claimed in claim 1 , further comprising a pulse stretcher between the beam splitter and the electro-optical device claim 1 , the pulse stretcher temporally stretching a pulse width of the reference laser beam.4. The measuring apparatus as claimed in claim 3 , further comprising a retroreflector between the pulse stretcher and the electro-optical device claim 3 , wherein the retroreflector temporally overlaps a pulse of the reference laser ...

Подробнее
Номер записи: 19
14-07-2016 дата публикации

METHOD OF INSPECTING SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME

Номер: US20160204041A1
Автор: JUN Chungsam, KIM Minkook, KO Wooseok, Lee Sangkil, Yang Yusin
Принадлежит:

A method of inspecting a semiconductor device includes providing a substrate, on which a mold layer with a plurality of mold openings is provided, milling the mold layer in a direction inclined at a predetermined angle with respect to a direction normal to a top surface of the substrate, such that an inclined cutting surface exposing milled mold openings is formed, the milled mold openings including first milling openings along a first column extending in a first direction and having different heights, obtaining image data of the cutting surface, the image data including first contour images of the first milling openings, and obtaining a first process parameter, which represents an extent of bending of the mold openings according to a distance from a top surface of the substrate, using positions of center points of the first contour images. 1. A method of inspecting a semiconductor device , the method comprising:providing a substrate, on which a mold layer with a plurality of mold openings is provided;milling the mold layer in a direction inclined at a predetermined angle with respect to a direction normal to a top surface of the substrate, such that an inclined cutting surface exposing milled mold openings is formed, the milled mold openings including first milling openings along a first column extending in a first direction and having different heights;obtaining image data of the inclined cutting surface, the image data including first contour images of the first milling openings; andobtaining a first process parameter, which represents an extent of bending of the mold openings according to a distance from a top surface of the substrate, using positions of center points of the first contour images.2. The method as claimed in claim 1 , wherein obtaining the first process parameter includes:obtaining positions of the center points of the first contour images;establishing one of the first contour images as a reference contour image; andobtaining relative position ...

Подробнее
Номер записи: 20
18-06-2020 дата публикации

Spectroscopic system, optical inspection method, and semiconductor device fabrication method

Номер: US20200194294A1
Автор: Kang-woong KO, Minsu Kim, Sungho Jang, Younghoon Sohn, Yusin Yang
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A semiconductor fabrication method includes performing a first treatment process on a substrate, inspecting the substrate using a spectroscopic system that includes a light entrance part, a light exit part, a diffraction grating, and a controllable mirror device, and performing a second treatment process of the substrate. The step of performing the inspection process includes separating incident light into a plurality of light rays each having different wavelengths, the incident light being provided to the light entrance part and diffracted at the diffraction grating, and moving the controllable mirror device to reflect a first light ray from among the plurality of light rays having a first wavelength to the light exit part.

Подробнее
Номер записи: 21
02-07-2020 дата публикации

SUBSTRATE INSPECTION METHOD AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME

Номер: US20200209165A1
Автор: LEE Chihoon, Sohn Younghoon, Yang Yusin
Принадлежит:

Disclosed are a substrate inspection method and a method of fabricating a semiconductor device using the same. The inspection method may include measuring a target area of a substrate using a pulsed beam to obtain a first peak, measuring a near field ultrasound, which is produced by the pulsed beam in a near field region including the target area, using a first continuous wave beam different from the pulsed beam to obtain a second peak, and measuring a far field ultrasound, which is produced by the near field ultrasound in a far field region outside the near field region, using a second continuous wave beam to examine material characteristics of the substrate. 1. A substrate inspection method , comprising:measuring a target area of a substrate using a pulsed beam to obtain a first peak containing information on a surface defect of the substrate;measuring a near field ultrasound, which is produced by the pulsed beam in a near field region including the target area, using a first continuous wave beam different from the pulsed beam to obtain a second peak containing information on an internal defect in the substrate or the surface defect; andmeasuring a far field ultrasound, which is produced by the near field ultrasound in a far field region outside the near field region, using a second continuous wave beam to examine material characteristics of the substrate.2. The method as claimed in claim 1 , further comprising determining a kind of the surface defect formed on the substrate using the first peak and the second peak.3. The method as claimed in claim 2 , wherein determining the kind of the surface defect on the substrate using the first peak and the second peak includes:determining whether the second peak is obtained;determining whether the first peak is obtained, when the second peak is obtained; anddetermining that the surface defect occurs in the target area, when the first peak is obtained.4. The method as claimed in claim 3 , wherein the surface defect includes ...

Подробнее
Номер записи: 22
26-10-2017 дата публикации

Fan-out panel level package and method of fabricating the same

Номер: US20170309523A1
Автор: Chungsam Jun, Jinsung Kim, Younghoon Sohn, Yusin Yang
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A method of fabricating a package includes providing a mold substrate supporting dies in cavities of a fan-out substrate, detecting positions of the dies with respect to the fan-out substrate, and forming interconnection lines. At least one of the interconnection lines includes a first portion extending from the fan-out substrate to a target position on the cavity disposed between the fan-out substrate and one of the dies the one of the dies disposed at a detected position different from the target position, and a second portion extending from the one die to the fan-out substrate.

Подробнее
Номер записи: 23
21-12-2017 дата публикации

Apparatus and method for measuring thickness

Номер: US20170363418A1
Автор: Chungsam Jun, Sung Yoon Ryu, Younghoon Sohn, Yunjung JEE, Yusin Yang
Принадлежит: SAMSUNG ELECTRONICS CO LTD

Disclosed are apparatuses and methods for measuring a thickness. The apparatus for measuring a thickness including a light source that emits a femto-second laser, an optical coupler through which a portion of the femto-second laser is incident onto a target and other portion of the femto-second laser is incident onto a reference mirror, a detector configured to receive a reflection signal reflected on the reference mirror and a sample signal generated from the target and configured to measure a thickness of the target based on an interference signal between the reflection signal and the sample signal, and a plurality of optical fiber lines configured to connect the light source, the optical coupler, and the detector to each other may be provided.

Подробнее
Номер записи: 24
01-11-2022 дата публикации

Substrate inspection method and method of fabricating a semiconductor device using the same

Номер: US11486834B2
Автор: Chihoon Lee, Younghoon Sohn, Yusin Yang
Принадлежит: SAMSUNG ELECTRONICS CO LTD

Disclosed are a substrate inspection method and a method of fabricating a semiconductor device using the same. The inspection method may include measuring a target area of a substrate using a pulsed beam to obtain a first peak, measuring a near field ultrasound, which is produced by the pulsed beam in a near field region including the target area, using a first continuous wave beam different from the pulsed beam to obtain a second peak, and measuring a far field ultrasound, which is produced by the near field ultrasound in a far field region outside the near field region, using a second continuous wave beam to examine material characteristics of the substrate.

Подробнее
Номер записи: 25
15-06-2023 дата публикации

Wafer inspection apparatus using three-dimensional image and method of inspecting wafer using the same

Номер: US20230184691A1
Автор: Sungyoon Ryu, Younghoon Sohn, Yusin Yang
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A wafer inspection apparatus includes: a stage configured such that a wafer is arranged on the stage; an optical apparatus configured to align the wafer on the stage and generate an optical intensity image including an optical intensity profile; a focus adjusting unit configured to align light incident onto the wafer to be in-focus; and an image processor configured to integrate the optical intensity image with vertical level data of the in-focus to generate and analyze a three-dimensional (3D) image.

Подробнее
Номер записи: 26
11-07-2024 дата публикации

Terahertz signal measuring apparatus and measuring method

Номер: US20240230528A1
Автор: Eunhyuk Choi, Ikseon Jeon, Ingi KIM, Inkeun BAEK, Namil Koo, Sungyoon Ryu, Sunhong JUN, Wontae Kim, Younghoon Sohn, Yusin Yang
Принадлежит: SAMSUNG ELECTRONICS CO LTD

A measuring apparatus includes a stage including a transmissive wafer chuck on which a sample wafer is provided, where the sample wafer includes a silicon substrate and at least one material layer on the silicon substrate, a light source unit including a light source configured to generate and output a femtosecond laser beam, and a confocal laser-induced terahertz (THz) emission microscopy (LTEM) unit configured to generate multi-photon excitation by splitting the femtosecond laser beam into four sub-laser beams and causing three sub-laser beams among the four sub-laser beams to be incident in an overlapping manner on a measurement position of the sample wafer, where the confocal LTEM unit is configured to generate the multi-photon excitation based on the three sub-laser beams being incident on a lower surface of the silicon substrate.

Подробнее
Номер записи: 27
22-12-2022 дата публикации

Test apparatus and test method thereof

Номер: US20220404395A1
Автор: Hoon Kim, Jiwon YEOM, Kwangeun KIM, Seokjung Yun, Seungbum Hong, Souk Kim, Sungyoon Ryu, Younghoon Sohn, Yusin Yang
Принадлежит: Korea Advanced Institute of Science and Technology KAIST

A test apparatus includes a movable stage to support a sample, tips above the stage that have different shapes and alternately perform profiling and milling on the sample, a tip stage connected to a cantilever coupled to the tips, the tip stage to adjust a position of the cantilever, a position sensor to obtain information about a positional relationship between the tips and the sample, a stage controller to control movements of the stage and the tip stage, based on the information about the positional relationship, and a tip controller to select the tips for performing the profiling or milling and to determine conditions for performing milling, wherein a depth of the sample being processed by the milling in the first direction is controlled based on a relationship between a distance between the tips and the sample and a force between the tips and the sample.

Подробнее
Номер записи: 28
06-04-2023 дата публикации

LIGHT DETECTION AND RANGING (LiDAR)-BASED INSPECTION DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20230108333A1
Автор: Sungyoon Ryu, Younghoon Sohn, Yusin Yang
Принадлежит: SAMSUNG ELECTRONICS CO LTD

Provided is a light detection and ranging (LiDAR)-based inspection device including an ultrafast pulse source configured to generate a first ultrafast pulse and a second ultrafast pulse each having a pulse width ranging from 1 fs to 100 fs, a stage configured to generate a gating signal by adjusting a distance of flight of the first ultrafast pulse, a dispersing device configured to generate a chirp signal, based on the second ultrafast pulse reflected from a specimen, the chirp signal including a plurality of pulses having different wavelengths, a nonlinear optical generator configured to generate a nonlinear optical signal based on the chirp signal and the gating signal, and a detector configured to detect the nonlinear optical signal, wherein the gating signal temporally overlaps with some of the plurality of pulses included in the chirp signal in the nonlinear optical generator.

Подробнее
Номер записи: 29