ELECTRIC CIRCUIT

As for a transistor, overlapped are factors such as a variation of a gate insulation film which occurs due to a difference of a manufacturing process and a substrate used and a variation of a crystalline state in a channel forming region and thereby, there occurs a variation of a threshold voltage and mobility of a transistor. This invention provides an electric circuit which used a rectification type device in which an electric current is generated only in a single direction, when an electric potential difference was applied to electrodes at both ends of the device. Then, the invention provides an electric circuit which utilized a fact that, when a signal voltage is inputted to one terminal of the rectification type device, an electric potential of the other terminal becomes an electric potential offset only by the threshold voltage of the rectification type device.

SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS USING THE SAME

The transistor suffers the variation caused in threshold voltage or mobility due to gathering of the factors of the variation in gate insulator film resulting from a difference in manufacture process or substrate used and of the variation in channel-region crystal state. The present invention provides an electric circuit having an arrangement such that both electrodes of a capacitance element can hold a gate-to-source voltage of a particular transistor. The invention provides an electric circuit having a function capable of setting a potential difference at between the both electrodes of the capacitance element by the use of a constant-current source. 1. A semiconductor device comprising:a pixel portion; and a shift register;', 'a first latch circuit operationally connected to the shift register;', 'a second latch circuit operationally connected to the first latch circuit;', 'a D/A converter circuit operationally connected to the second latch circuit; and', a first transistor;', 'a second transistor;', 'a first capacitor;', 'a second capacitor;', 'a first switch;', 'a second switch;', 'a third switch;', 'a fourth switch;', 'a fifth switch; and', 'a sixth switch,, 'a signal amplifier circuit operationally connected to the D/A converter circuit, the signal amplifier circuit comprising], 'a signal line drive circuit operationally connected to the pixel portion, the signal line drive circuit comprisingwherein a gate of the first transistor is electrically connected to one terminal of the first capacitor and one terminal of the sixth switch,wherein the other terminal of the first capacitor is electrically connected to one terminal of the first switch and one terminal of the second switch,wherein the other terminal of the second switch is electrically connected to one of a source and a drain of the first transistor, one of a source and a drain of the second transistor, one terminal of the third switch, and one terminal of the fourth switch,wherein the other of the source ...

SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS USING THE SAME

The transistor suffers the variation caused in threshold voltage or mobility due to gathering of the factors of the variation in gate insulator film resulting from a difference in manufacture process or substrate used and of the variation in channel-region crystal state. The present invention provides an electric circuit having an arrangement such that both electrodes of a capacitance element can hold a gate-to-source voltage of a particular transistor. The invention provides an electric circuit having a function capable of setting a potential difference at between the both electrodes of the capacitance element by the use of a constant-current source.

SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS USING THE SAME

The transistor suffers the variation caused in threshold voltage or mobility due to gathering of the factors of the variation in gate insulator film resulting from a difference in manufacture process or substrate used and of the variation in channel-region crystal state. The present invention provides an electric circuit having an arrangement such that both electrodes of a capacitance element can hold a gate-to-source voltage of a particular transistor. The invention provides an electric circuit having a function capable of setting a potential difference at between the both electrodes of the capacitance element by the use of a constant-current source.

ELECTRIC CIRCUIT

A transistor has variation in a threshold voltage or mobility due to accumulation of factors such as variation in a gate insulating film which is caused by a difference of a manufacturing process or a substrate to be used and variation in a crystal state of a channel formation region. The present invention provides an electric circuit which is arranged such that both electrodes of a capacitance device can hold a voltage between the gate and the source of a specific transistor. Further, the present invention provides an electric circuit which has a function capable of setting a potential difference between both electrodes of a capacitance device so as to be a threshold voltage of a specific transistor. 1. (canceled)2. A semiconductor device comprising:a pixel; anda peripheral circuit, a first line;', 'a first transistor, a second transistor, and a third transistor;', 'a first capacitor; and', 'an element including an anode and a cathode,, 'wherein the pixel comprises'} a second capacitor; and', 'a switch including a first terminal and a second terminal,, 'wherein the peripheral circuit comprises'}wherein one of terminals of the first capacitor, one of the anode and the cathode, one of a source and a drain of the first transistor, and one of a source and a drain of the third transistor are electrically connected to each other,wherein one of a source and a drain of the second transistor, a gate of the first transistor, and the other of the terminals of the first capacitor are electrically connected to each other,wherein the other of the source and the drain of the third transistor is electrically connected to the first line,wherein the first terminal of the switch is electrically connected to the first line, andwherein the second terminal of the switch is electrically connected to one of terminals of the second capacitor.3. The semiconductor device according to claim 2 , wherein the element is a photoelectric converter device.4. The semiconductor device according to ...

Electric Circuit

As for a transistor, overlapped are factors such as a variation of a gate insulation film which occurs due to a difference of a manufacturing process and a substrate used and a variation of a crystalline state in a channel forming region and thereby, there occurs a variation of a threshold voltage and mobility of a transistor. This invention provides an electric circuit which used a rectification type device in which an electric current is generated only in a single direction, when an electric potential difference was applied to electrodes at both ends of the device. Then, the invention provides an electric circuit which utilized a fact that, when a signal voltage is inputted to one terminal of the rectification type device, an electric potential of the other terminal becomes an electric potential offset only by the threshold voltage of the rectification type device.

PLASMA TREATMENT APPARATUS AND METHOD FOR PLASMA TREATMENT

A plasma treatment apparatus and a method for plasma treatment are provided that made possible to control accurately a distance between plasma and an object to be treated (hereinafter referred to as an object), and that facilitated a transportation of a substrate that a width is thin and grown in size. The plasma treatment apparatus of the present invention is provided with a gas supply means for introducing a processing gas into a place between a first electrode and a second electrode under an atmospheric pressure or around atmospheric pressure; a plasma generation means for generating plasma by applying a high frequency voltage to the first electrode or the second electrode under the condition that the processing gas is introduced; and, a transport means for transporting the object by floating the object by blowing the processing gas or a transporting gas to the object. An etching treatment; an ashing treatment; a thin film formation; or a cleaning treatment of components using the first ...

Electric Circuit

A transistor has variation in a threshold voltage or mobility due to accumulation of factors such as variation in a gate insulating film which is caused by a difference of a manufacturing process or a substrate to be used and variation in a crystal state of a channel formation region. The present invention provides an electric circuit which is arranged such that both electrodes of a capacitance device can hold a voltage between the gate and the source of a specific transistor. Further, the present invention provides an electric circuit which has a function capable of setting a potential difference between both electrodes of a capacitance device so as to be a threshold voltage of a specific transistor.

Electric Circuit

As for a transistor, overlapped are factors such as a variation of a gate insulation film which occurs due to a difference of a manufacturing process and a substrate used and a variation of a crystalline state in a channel forming region and thereby, there occurs a variation of a threshold voltage and mobility of a transistor. This invention provides an electric circuit which used a rectification type device in which an electric current is generated only in a single direction, when an electric potential difference was applied to electrodes at both ends of the device. Then, the invention provides an electric circuit which utilized a fact that, when a signal voltage is inputted to one terminal of the rectification type device, an electric potential of the other terminal becomes an electric potential offset only by the threshold voltage of the rectification type device.

ELECTRIC CIRCUIT

A transistor has variation in a threshold voltage or mobility due to accumulation of factors such as variation in a gate insulating film which is caused by a difference of a manufacturing process or a substrate to be used and variation in a crystal state of a channel formation region. The present invention provides an electric circuit which is arranged such that both electrodes of a capacitance device can hold a voltage between the gate and the source of a specific transistor. Further, the present invention provides an electric circuit which has a function capable of setting a potential difference between both electrodes of a capacitance device so as to be a threshold voltage of a specific transistor.

LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

To prevent a point defect and a line defect in forming a light-emitting device, thereby improving the yield. A light-emitting element and a driver circuit of the light-emitting element, which are provided over different substrates, are electrically connected. That is, a light-emitting element and a driver circuit of the light-emitting element are formed over different substrates first, and then electrically connected. By providing a light-emitting element and a driver circuit of the light-emitting element over different substrates, the step of forming the light-emitting element and the step of forming the driver circuit of the light-emitting element can be performed separately. Therefore, degrees of freedom of each step can be increased, and the process can be flexibly changed. Further, steps (irregularities) on the surface for forming the light-emitting element can be reduced than in the conventional technique.

Display Device and Method for Manufacturing the Same

It is an object of the present invention to provide a display device preventing the external invasion of water and/or oxygen and preventing the deterioration of a luminous element due to these invading substances and to provide a production method including simple production steps for producing the display device. The invention provides a display device having a sealing material on the rim of an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Further, the invention provides a display device having a barrier body on an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Furthermore, the application of droplet discharge technique in production steps for producing the display device can eliminate a photolithography step such as exposing and developing. Thus, a method of producing a display device having an improved yield is provided. 1. (canceled)2. A display device comprising:a first substrate;a transistor over the first substrate;a light emitting element over the first substrate;a first insulator over the light emitting element, the first insulator comprising an insulating material;a second insulator located between a gate insulating layer of the transistor and one of a source wiring and a drain wiring of the transistor;a third insulator located between the one of the source wiring and the drain wiring and the light emitting element, the third insulator comprising a resin material;a second substrate opposed to the first substrate, over the first insulator; anda sealing material interposed between the first substrate and the second substrate,wherein the sealing material comprises a first region and a second region,wherein the sealing material is in contact with a conductive layer in the first region,wherein the sealing material overlaps with the conductive layer in the second region,wherein the first region and the second region are separated from ...

LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

To prevent a point defect and a line defect in forming a light-emitting device, thereby improving the yield. A light-emitting element and a driver circuit of the light-emitting element, which are provided over different substrates, are electrically connected. That is, a light-emitting element and a driver circuit of the light-emitting element are formed over different substrates first, and then electrically connected. By providing a light-emitting element and a driver circuit of the light-emitting element over different substrates, the step of forming the light-emitting element and the step of forming the driver circuit of the light-emitting element can be performed separately. Therefore, degrees of freedom of each step can be increased, and the process can be flexibly changed. Further, steps (irregularities) on the surface for forming the light-emitting element can be reduced than in the conventional technique.

SEMICONDUCTOR DEVICE

It is an object of the present invention to provide a semiconductor device in which data can be written except when manufacturing the semiconductor device and that counterfeits can be prevented. Moreover, it is another object of the invention to provide an inexpensive semiconductor device including a memory having a simple structure. The semiconductor device includes a field effect transistor formed over a single crystal semiconductor substrate, a first conductive layer formed over the field effect transistor, an organic compound layer formed over the first conductive layer, and a second conductive layer formed over the organic compound layer, and a memory element includes the first conductive layer, the organic compound, and the second conductive layer. According to the above structure, a semiconductor device which can conduct non-contact transmission/reception of data can be provided by possessing an antenna.

ELECTRIC CIRCUIT

A transistor has variation in a threshold voltage or mobility due to accumulation of factors such as variation in a gate insulating film which is caused by a difference of a manufacturing process or a substrate to be used and variation in a crystal state of a channel formation region. The present invention provides an electric circuit which is arranged such that both electrodes of a capacitance device can hold a voltage between the gate and the source of a specific transistor. Further, the present invention provides an electric circuit which has a function capable of setting a potential difference between both electrodes of a capacitance device so as to be a threshold voltage of a specific transistor.

SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS USING THE SAME

The transistor suffers the variation caused in threshold voltage or mobility due to gathering of the factors of the variation in gate insulator film resulting from a difference in manufacture process or substrate used and of the variation in channel-region crystal state. The present invention provides an electric circuit having an arrangement such that both electrodes of a capacitance element can hold a gate-to-source voltage of a particular transistor. The invention provides an electric circuit having a function capable of setting a potential difference at between the both electrodes of the capacitance element by the use of a constant-current source. 1. (canceled)2. A semiconductor device comprising:a first transistor;a second transistor;a first capacitor;a second capacitor;a third capacitor;a first switch;a second switch;a third switch;a fourth switch;a fifth switch;a sixth switch;a seventh switch;an eighth switch; anda ninth switch,wherein the first transistor and the second transistor have the same polarity,wherein a gate of the first transistor is electrically connected to one terminal of the first capacitor and one terminal of the sixth switch,wherein the other terminal of the first capacitor is electrically connected to one terminal of the first switch and one terminal of the second switch,wherein the other terminal of the second switch is electrically connected to one of a source and a drain of the first transistor, one of a source and a drain of the second transistor, one terminal of the fourth switch, and one terminal of the eighth switch,wherein the other terminal of the eighth switch is electrically connected to one terminal of the third capacitor and one terminal of the ninth switch,wherein the other of the source and the drain of the first transistor is electrically connected to one terminal of the fifth switch,wherein the other terminal of the fourth switch is electrically connected to a gate of the second transistor and one terminal of the second ...

Display Device and Method for Manufacturing the Same

It is an object of the present invention to provide a display device preventing the external invasion of water and/or oxygen and preventing the deterioration of a luminous element due to these invading substances and to provide a production method including simple production steps for producing the display device. The invention provides a display device having a sealing material on the rim of an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Further, the invention provides a display device having a barrier body on an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Furthermore, the application of droplet discharge technique in production steps for producing the display device can eliminate a photolithography step such as exposing and developing. Thus, a method of producing a display device having an improved yield is provided. 125-. (canceled)26. A display device comprising:a display section comprising a transistor and a self-luminous light emitter over a first substrate;a first interlayer insulator formed between the transistor and the self-luminous light emitter, wherein the first interlayer insulator comprises a resin material;a protective film formed over the self-luminous light emitter, the protective film comprising an insulating material;a second substrate opposed to the first substrate; anda sealing material interposed between the first substrate and the second substrate,wherein the self-luminous light emitter comprises a first electrode, a light-emitting layer, and a second electrode, wherein the light-emitting layer is sandwiched between the first electrode and the second electrode,wherein the protective film is in direct contact with the second electrode,wherein the first electrode is electrically connected to one of source and drain electrodes of the transistor, andwherein the sealing material is provided at the periphery of the ...

CHARGED PARTICLE RADIATION DEVICE

Disclosed is a charged particle radiation device having a charged particle source which generates a charged particle as a probe, a charged particle optical system, a sample stage, a vacuum discharge system, an aperture which restricts a probe, a conductive film, and a charged particle detector, wherein the conductive film is provided at a position excluding the optical axis of the optical system between the sample stage and the aperture; and the distance between the sensing surface of the surface of the charged particle detector and the sample stage is larger than the distance between the sample stage and the conductive film, so that the surface of the conductive film and the sensing surface of the detector are inclined. 1. A charged particle radiation device comprising a charged particle source which generates a charged particle as a probe , a charged particle optical system , a sample stage , a vacuum discharge system , an aperture which restricts a probe , a conductive film , and a charged particle detector , wherein the conductive film is provided at a position excluding the optical axis of the optical system between the sample stage and the aperture; and the distance between the sensing surface of the charged particle detector and the sample stage is larger than the distance between the sample stage and the conductive film , so that the surface of the conductive film and the sensing surface of the detector are inclined.2. The charged particle radiation device according to claim 1 , wherein the conductive film is arranged vertically to the optical axis of a primary electron beam with a likelihood of ±10° claim 1 , and an angle between the conductive film and the sensing surface of the detector falls in a range of 30° through 150°.3. The charged particle radiation device according to claim 1 , wherein the conductive film is arranged relative to the optical axis of a primary electron beam with an angle of 100° through 150° therebetween claim 1 , and an angle ...

ELECTRONIC DEVICES

An electronic device capable of transmitting and receiving a mail through an internet usually has from 12 to 20 operation keys inclusive of numerical keys and special keys. In order to input Japanese characters inclusive of “kanji” and special characters as data, complex operations must be executed by changing over the input mode. A portable data terminal as represented by a cellular phone or an electronic device such as a data terminal as represented by a personal computer or a desk top telephone, has such a shape that the first center-line of the first housing and the second center line of the second housing come into agreement and in parallel with each other only in a state where the first housing and the second housing are folded by the hinge. 1. An electronic device comprising:a housing comprising a display unit;wherein a first direction of a symbol or a picture is displayed on the display unit when arranging the housing in a vertical direction,wherein a second direction of a symbol or a picture is displayed on the display unit when arranging the housing in a lateral direction, andwherein the first direction is different from the second direction.2. An electronic device according to claim 1 ,wherein the display unit comprises a plurality of pixels, andwherein each of the plurality of pixels comprises a photoelectric conversion element.3. An electronic device according to claim 1 ,wherein the display unit comprises a plurality of pixels, andwherein each of the plurality of pixels comprises first to fifth transistors, a capacitor, and a light-emitting element.4. An electronic device according to claim 1 , wherein the electronic device is an information terminal5. An electronic device according to claim 1 , wherein the electronic device is a cellular phone.6. An electronic device according to claim 1 , wherein the electronic device is a personal digital assistant.7. An electronic device comprising:a first housing including a first display unit;a second housing ...

Processor and Methods of Adjusting a Branch Misprediction Recovery Mode

A processor core includes a fetch control unit for fetching instructions and placing the instructions into an instruction queue and includes a branch predictor for controlling the fetch control unit to speculatively fetch at least one instruction subsequent to an unresolved branch instruction. The processor further includes a controller configured to dispatch instructions from the instruction queue and, in response to a branch misprediction of an unresolved control instruction, to apply a selected one of a checkpointing-based recovery mode and a commit-time-based recovery mode. 1. A processor core comprising:a fetch control unit for fetching instructions and placing the instructions into an instruction queue;a branch predictor for controlling the fetch control unit to speculatively fetch at least one instruction subsequent to an unresolved branch instruction; anda controller configured to dispatch instructions from the instruction queue and, in response to a branch misprediction of an unresolved control instruction, to apply a selected one of a checkpointing-based recovery mode and a commit-time-based recovery mode.2. The processor core of claim 1 , further comprising:a register coupled to the controller and configured to store at least one programmable bit to identify a misprediction recovery mode of the controller;wherein the controller selectively applies the checkpointing-based recovery mode to recover an architectural state in response to the branch misprediction when the programmable bit has a first value; andwherein the controller selectively applies the commit-time-based recovery mode to recover the architectural state in response to the branch misprediction when the programmable bit has a second value.3. The processor core of claim 1 , wherein the controller selectively applies the checkpointing-based recovery mode when the processor is in a high performance state and the commit-time-based recovery mode otherwise.4. The processor core of claim 1 , wherein ...

ELECTRIC CIRCUIT

A transistor has variation in a threshold voltage or mobility due to accumulation of factors such as variation in a gate insulating film which is caused by a difference of a manufacturing process or a substrate to be used and variation in a crystal state of a channel formation region. The present invention provides an electric circuit which is arranged such that both electrodes of a capacitance device can hold a voltage between the gate and the source of a specific transistor. Further, the present invention provides an electric circuit which has a function capable of setting a potential difference between both electrodes of a capacitance device so as to be a threshold voltage of a specific transistor. 1. A semiconductor device comprising:a first transistor;a second transistor;a third transistor;a fourth transistor;a fifth transistor;a sixth transistor;a seventh transistor;an eighth transistor;a ninth transistor;a first capacitor; anda second capacitor,wherein one of a source electrode and a drain electrode of the first transistor and one of a source electrode and a drain electrode of the third transistor are electrically connected to a first wiring,wherein other of the source electrode and the drain electrode of the first transistor is electrically connected to one of a source electrode and a drain electrode of the second transistor,wherein other of the source electrode and the drain electrode of the third transistor is electrically connected to one of a source electrode and a drain electrode of the fourth transistor,wherein other of the source electrode and the drain electrode of the second transistor, other of the source electrode and the drain electrode of the fourth transistor, one of a source electrode and a drain electrode of the fifth transistor, one of a source electrode and a drain electrode of the sixth transistor, one of a source electrode and a drain electrode of the eighth transistor, and one of a source electrode and a drain electrode of the ninth ...

STACKED MEMORY DEVICE WITH HELPER PROCESSOR

A processing system comprises one or more processor devices and other system components coupled to a stacked memory device having a set of stacked memory layers and a set of one or more logic layers. The set of logic layers implements a helper processor that executes instructions to perform tasks in response to a task request from the processor devices or otherwise on behalf of the other processor devices. The set of logic layers also includes a memory interface coupled to memory cell circuitry implemented in the set of stacked memory layers and coupleable to the processor devices. The memory interface operates to perform memory accesses for the processor devices and for the helper processor. By virtue of the helper processor's tight integration with the stacked memory layers, the helper processor may perform certain memory-intensive operations more efficiently than could be performed by the external processor devices. 1. A system comprising: a set of stacked memory layers comprising memory cell circuitry; and', 'a set of one or more logic layers electrically coupled to the set of stacked memory layers, the set of one or more logic layers comprising a helper processor coupled to the memory cell circuitry of the set of stacked memory layers and comprising a memory interface coupled to the helper processor and coupleable to a processor device external to the IC package, the memory interface to perform memory accesses for the external processor device and to perform memory accesses for the helper processor., 'an integrated circuit (IC) package comprising2. The system of claim 1 , wherein the set of one or more logic layers comprises:a first logic layer comprising the helper processor; anda second logic layer comprising the memory interface.3. The system of claim 1 , wherein the helper processor comprises a first processor core to execute instructions in accordance with a first instruction set architecture (ISA) and a second processor core to execute instructions in ...

ORALLY-DISINTEGRATING SOLID PREPARATION

The present invention provides an orally-disintegrating solid preparation such as a tablet produced by tabletting fine granules showing controlled release of a pharmaceutically active ingredient and an additive, and the like, and the orally-disintegrating solid preparation containing fine granules coated with a coating layer containing a polymer affording a casting film having an elongation at break of about 100-about 700%. With the preparation, breakage of fine granules during tabletting can be suppressed in the production of an orally-disintegrating solid preparation containing fine granules showing controlled release of a pharmaceutically active ingredient. 139-. (canceled)40. An orally-disintegrating solid preparation comprising enteric fine granules , the enteric fine granules comprising core granules comprising lansoprazole or an optically active form thereof or a salt thereof as a pharmaceutically active ingredient , a controlled release film , and an intermediate coating layer formed between the controlled release film and the core granules , the controlled release film comprises a polymer comprising a methacrylic acid-methyl acrylate-methyl methacrylate copolymer affording a casting film having an elongation at break of 100%-700% ,wherein the intermediate coating layer comprises one or more kinds selected from the group consisting of low-substituted hydroxypropyl cellulose, hydroxypropyl cellulose, hypromellose, polyvinylpyrrolidone, polyvinyl alcohol, methylcellulose and hydroxyethylmethylcellulose, wherein the amount of the intermediate coating layer to be applied is 0.02 part by weight to 1.5 part by weight per 1 part by weight of the granules core comprising the pharmaceutically active ingredient,wherein the amount of the pharmaceutically active ingredient dissolved from the enteric fine granules showing controlled release of the pharmaceutically active ingredient is not more than 10% in 2 hours as expressed by the dissolution rate in a pH 1.2 solution, ...

Display Device and Method for Manufacturing the Same

It is an object of the present invention to provide a display device preventing the external invasion of water and/or oxygen and preventing the deterioration of a luminous element due to these invading substances and to provide a production method including simple production steps for producing the display device. The invention provides a display device having a sealing material on the rim of an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Further, the invention provides a display device having a barrier body on an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Furthermore, the application of droplet discharge technique in production steps for producing the display device can eliminate a photolithography step such as exposing and developing. Thus, a method of producing a display device having an improved yield is provided. 1. (canceled)2. A display device comprising:a first substrate;a transistor over the first substrate;a light emitting element over the first substrate;a first insulator over the light emitting element, the first insulator comprising an insulating material;a second insulator located between a gate insulating layer of the transistor and one of a source wiring and a drain wiring of the transistor;a third insulator located between the one of the source wiring and the drain wiring and the light emitting element, the third insulator comprising a resin material;a second substrate opposed to the first substrate, over the first insulator; anda sealing material interposed between the first substrate and the second substrate,wherein the sealing material comprises a first region and a second region,wherein the sealing material overlaps with a conductive layer in the first region,wherein the sealing material overlaps with the conductive layer in the second region,wherein the first region and the second region are separated from each ...

ELECTRIC CIRCUIT

A transistor has variation in a threshold voltage or mobility due to accumulation of factors such as variation in a gate insulating film which is caused by a difference of a manufacturing process or a substrate to be used and variation in a crystal state of a channel formation region. The present invention provides an electric circuit which is arranged such that both electrodes of a capacitance device can hold a voltage between the gate and the source of a specific transistor. Further, the present invention provides an electric circuit which has a function capable of setting a potential difference between both electrodes of a capacitance device so as to be a threshold voltage of a specific transistor. 1a first transistor and a second transistors transistor connected in series;a first capacitance device connected between a gate electrode and a source electrode of said first transistor;a second capacitance device connected between a gate electrode and a source electrode of said second transistor;a first switch for making a value of a sum of a first potential difference between both electrodes of said first and second capacitance devices device and a second potential difference between both electrodes of said second capacitance device into a power supply voltage;a second switch for making a potential difference between said both electrodes of said first capacitance device into a threshold voltage of said first transistor;a third switch for making a potential difference between said both electrodes of said second capacitance device into a threshold voltage of said second transistor; anda fourth switch for outputting said output voltage from said source electrode of said first transistor when a first voltage is inputted in said gate electrode of said first transistor and a bias second voltage is inputted in said gate electrode of said second transistor.. An electric circuit for outputting an output voltage from an output-terminal based on an input voltage to be inputted ...

Orally-disintegrating solid preparation

SOLID PREPARATION OF ORAL DISINTEGRATION

La presente invención provee una preparación sólida de desintegración oral tales como un comprimido producido formando comprimidos los gránulos finos que muestran una liberación controlada de un principio activo para uso farmacéutico y un aditivo, y similares, y la preparación sólida de desintegración oral que contiene gránulos finos recubiertos con una capa de recubrimiento que contiene un polímero que produce una película de recubrimiento que tiene una elongación en la ruptura de alrededor de 100 - alrededor de 700%. Con la preparación, la ruptura de los gránulos finos durante la formación del comprimido puede suprimirse en la producción de una preparación sólida de desintegración oral que contiene los gránulos finos que muestran una liberación controlada de un principio activo para uso farmacéutico.

Orally-disintegrating solid preparation.

La presente invención provee una preparación sólida de desintegración oral tal como un comprimido producido formando comprimidos los gránulos finos que muestran una liberación controlada de un ingrediente farmacéuticamente activo y un aditivo, y similares, y la preparación sólida de desintegración oral que contiene gránulos finos recubiertos con una capa de recubrimiento que contiene un polímero que produce una película de recubrimiento que tiene una elongación en la ruptura de alrededor de 100 a alrededor de 700. Con la preparación, la ruptura de los gránulos finos durante la formación del comprimido puede suprimirse en la producción de una preparación sólida de desintegración oral que contiene los gránulos finos que muestran una liberación controlada de un ingrediente activo desde el punto de vista farmacéutico.

Orally-disintegrating solid preparation

The present invention provides an orally-disintegrating solid preparation such as a tablet produced by tabletting fine granules showing controlled release of a pharmaceutically active ingredient and an additive, and the like, and the orally-disintegrating solid preparation containing fine granules coated with a coating layer containing a polymer affording a casting film having an elongation at break of about 100 - about 700%. With the preparation, breakage of fine granules during tabletting can be suppressed in the production of an orally-disintegrating solid preparation containing fine granules showing controlled release of a pharmaceutically active ingredient.

Plasma treatment apparatus and method for plasma treatment

A plasma treatment apparatus and a method for plasma treatment are provided that made possible to control accurately a distance between plasma and an object to be treated (hereinafter referred to as an object), and that facilitated a transportation of a substrate that a width is thin and grown in size. The plasma treatment apparatus of the present invention is provided with a gas supply means for introducing a processing gas into a place between a first electrode and a second electrode under an atmospheric pressure or around atmospheric pressure; a plasma generation means for generating plasma by applying a high frequency voltage to the first electrode or the second electrode under the condition that the processing gas is introduced; and, a transport means for transporting the object by floating the object by blowing the processing gas or a transporting gas to the object. An etching treatment; an ashing treatment; a thin film formation; or a cleaning treatment of components using the first electrode and the second electrode is carried out by moving a relative position between the first electrode and the second electrode, and the object.

Driving method of light emitting device

A method of driving a light emitting device in which a plurality of pixels having a light emitting element are formed, characterized by including: setting j display periods (where j is a natural number) to appear in one frame period, each of the j display periods corresponding to one bit of a k-bit digital video signal (where k is a natural number); and subjecting lower n bits of the k bits (where n is a natural number, j≧k−n) to one or both of dither processing and error diffusion processing to thereby select whether the pixels turn on or turn off in each of the j display periods according to a (k−n)-bit digital video signal that is converted from the k-bit digital video signal.

Plasma treatment apparatus and method for plasma treatment

A plasma treatment apparatus and a method for plasma treatment are provided that made possible to control accurately a distance between plasma and an object to be treated (hereinafter referred to as an object), and that facilitated a transportation of a substrate that a width is thin and grown in size. The plasma treatment apparatus of the present invention is provided with a gas supply means for introducing a processing gas into a place between a first electrode and a second electrode under an atmospheric pressure or around atmospheric pressure; a plasma generation means for generating plasma by applying a high frequency voltage to the first electrode or the second electrode under the condition that the processing gas is introduced; and, a transport means for transporting the object by floating the object by blowing the processing gas or a transporting gas to the object. An etching treatment; an ashing treatment; a thin film formation; or a cleaning treatment of components using the first electrode and the second electrode is carried out by moving a relative position between the first electrode and the second electrode, and the object.

Electronic devices

An electronic device capable of transmitting and receiving a mail through an internet usually has from 12 to 20 operation keys inclusive of numerical keys and special keys. In order to input Japanese characters inclusive of “kanji” and special characters as data, complex operations must be executed by changing over the input mode. A portable data terminal as represented by a cellular phone or an electronic device such as a data terminal as represented by a personal computer or a desk top telephone, has such a shape that the first center line of the first housing and the second center line of the second housing come into agreement and in parallel with each other only in a state where the first housing and the second housing are folded by the hinge.

Electronic devices

An electronic device capable of transmitting and receiving a mail through an internet usually has from 12 to 20 operation keys inclusive of numerical keys and special keys. In order to input Japanese characters inclusive of “kanji” and special characters as data, complex operations must be executed by changing over the input mode. A portable data terminal as represented by a cellular phone or an electronic device such as a data terminal as represented by a personal computer or a desk top telephone, has such a shape that the first center line of the first housing and the second center line of the second housing come into agreement and in parallel with each other only in a state where the first housing and the second housing are folded by the hinge.

Orally-disintegrating solid preparation

Semiconductor device, display device and electronic device

As for a transistor, overlapped are factors such as a variation of a gate insulation film which occurs due to a difference of a manufacturing process and a substrate used and a variation of a crystalline state in a channel forming region and thereby, there occurs a variation of a threshold voltage and mobility of a transistor. This invention provides an electric circuit which used a rectification type device in which an electric current is generated only in a single direction, when an electric potential difference was applied to electrodes at both ends of the device. Then, the invention provides an electric circuit which utilized a fact that, when a signal voltage is inputted to one terminal of the rectification type device, an electric potential of the other terminal becomes an electric potential offset only by the threshold voltage of the rectification type device.

Electric circuit

A transistor has variation in a threshold voltage or mobility due to accumulation of factors such as variation in a gate insulating film which is caused by a difference of a manufacturing process or a substrate to be used and variation in a crystal state of a channel formation region. The present invention provides an electric circuit which is arranged such that both electrodes of a capacitance device can hold a voltage between the gate and the source of a specific transistor. Further, the present invention provides an electric circuit which has a function capable of setting a potential difference between both electrodes of a capacitance device so as to be a threshold voltage of a specific transistor.

Orally-disintegrating solid preparation

Liquid crystal display device, electronic device having the same, and semiconductor device

A liquid crystal display device with improved productivity and a manufacturing method of the same. A liquid crystal display device according to the invention comprises in a region in which a scan line and a data line intersect with each other a first substrate comprising a first thin film transistor using either an amorphous semiconductor or an organic semiconductor for a channel portion, a second substrate, a liquid crystal layer interposed between the first substrate and the second substrate, and a third substrate comprising a second thin film transistor using a crystalline semiconductor for a channel portion. In the liquid crystal display device of the invention, a crystal grain boundary in the crystalline semiconductor extends along the flow of electrons or holes in the second thin film transistor, the first substrate is attached to the second substrate so that the first substrate is exposed, a first region for forming the second thin film transistor and a second region for forming an input terminal and an output terminal are formed on the third substrate, and the short side length of the third substrate is 1 to 6 mm and the short side length of the first region is 0.5 to 1 mm.

Bisphosphonic acid derivative and compound thereof labeled with radioactive nuclide

An object of the present invention is to provide a bisphosphonic acid derivative and said bisphosphonic acid derivative being labeled with a radioactive nuclide, which has properties of rapid accumulation to the bone and rapid urinary excretion. The present invention relates to a bisphosphonic acid derivative and said bisphosphonic acid derivative being labeled with a radioactive nuclide, which is represented by the following general formula (1), R—Y—A  (1) wherein A is a bisphosphonic acid or a salt thereof, having P—C—P bond; Y is a bonding portion such as a methylene, an amido etc.; R is a group of any one of a polyaminopolycarboxylic acid, an aliphatic carboxylic acid, a mercaptoacetylpolyamino acid or its derivatives and a compound represented by the formula (2), X is a halogen atom or an isotope thereof or an alkyl tin; Z is a group of any one of compounds of an aminocarboxylic acid, an alkylcarboxylic acid or a substituted-alkylcarboxylic acid, an alkylsulfonic acid or a substituted-alkylsulfonic acid.

Light-emitting device and manufacturing method thereof

To prevent a point defect and a line defect in forming a light-emitting device, thereby improving the yield. A light-emitting element and a driver circuit of the light-emitting element, which are provided over different substrates, are electrically connected. That is, a light-emitting element and a driver circuit of the light-emitting element are formed over different substrates first, and then electrically connected. By providing a light-emitting element and a driver circuit of the light-emitting element over different substrates, the step of forming the light-emitting element and the step of forming the driver circuit of the light-emitting element can be performed separately. Therefore, degrees of freedom of each step can be increased, and the process can be flexibly changed. Further, steps (irregularities) on the surface for forming the light-emitting element can be reduced than in the conventional technique.

Semiconductor device and manufacturing method thereof

It is an object of the present invention to provide a semiconductor device in which a barrier property is improved; a compact size, a thin shape, and lightweight are achieved; and flexibility is provided. By providing a stacked body including a plurality of transistors in a space between a pair of substrates, a semiconductor device is provided, in which a harmful substance is prevented from entering and a barrier property is improved. In addition, by using a pair of substrates which are thinned by performing grinding and polishing, a semiconductor device is provided, in which a compact size, a thin shape, and lightweight are achieved. Further, a semiconductor device is provided, in which flexibility is provided and a high-added value is achieved.

Semiconductor Device

It is an object of the present invention to provide a semiconductor device in which data can be written except when manufacturing the semiconductor device and that counterfeits can be prevented. Moreover, it is another object of the invention to provide an inexpensive semiconductor device including a memory having a simple structure. The semiconductor device includes a field effect transistor formed over a single crystal semiconductor substrate, a first conductive layer formed over the field effect transistor, an organic compound layer formed over the first conductive layer, and a second conductive layer formed over the organic compound layer, and a memory element includes the first conductive layer, the organic compound, and the second conductive layer. According to the above structure, a semiconductor device which can conduct non-contact transmission/reception of data can be provided by possessing an antenna.

Electric circuit

Memory Device and Semiconductor Device

The present invention provides a memory device which has a memory element having a simple structure in which a composition layer is sandwiched between a pair of conductive layers. With this characteristic, a memory device which is involatile, easily manufactured, and additionally recordable can be provided. A memory device of the present invention has plural memory cells, plural bit lines extending in a first direction, and plural word lines extending in a second direction which is perpendicular to the first direction. Each of the plural memory cells has a memory element. The memory element comprises a first conductive layer forming the bit line, a second conductive layer forming the word line, and a composition layer to be hardened by an optical action. The composition layer is formed between a first conductive layer and a second conductive layer.

Display device and electronic device

The invention provides a display device and an electronic device, each of which has one of a structure in which a substrate provided with a light emitting element which performs bottom light emission and a substrate provided with a light emitting element which performs top light emission are attached, and a structure in which two substrates, each of which is provided with a light emitting element which performs bottom light emission are attached. By attaching two substrates, each of which is provided with a light emitting element, displays are provided on the front and back of the display device, thus a high added value can be realized. One of the two substrates, each of which is provided with a light emitting element also functions as a sealing substrate for another substrate, thus a compact, thin, and lightweight display device can be obtained.

Recorded medium on which program for displaying skill achievement level, display device, and displaying method

A recorded medium on which a program for displaying an index of skill achievement level of vocational field concerning the skills that one or more users have is recorded. The program is a (skill-map) displaying program characterized in that the program has a table having item (a) where the results of evaluation of the degrees of achievement of skill items necessary for the vocational field by a predetermined evaluating method are inputted a s numerical values and item (b) where the reference values of the skill items are inputted as numerical values, the numerical values inputted to table (a) and those of table (b) are compared to display the skill achievement levels of the users at the input time and the reference values for comparison. Such a program is used especially through a network to facilitate the matching of a vocation and the business management for companies and to help the user make a skill-up plan and know the market value of the user. A skill map displaying device and a displaying method are also disclosed.

表示装置及びそれを用いた電子機器

【課題】不揮発性であって、データの追記が可能で、作製工程が増加することがない記憶回路を有する表示装置、表示装置を用いた電子機器の提供を課題とする。 【解決手段】一対の導電層間に有機化合物層が挟まれた簡単な構造の記憶素子からなる記憶回路を有する表示装置を提供する。上記構成を有することにより、不揮発性であって、データの追記が可能で、作製工程が増加することがない記憶回路を有する表示装置を提供することができる。 【選択図】 図２

A computer program for displaying skill achievement level, display device and displaying method

An information displaying method for displaying an index of skill achievement level of a vocational field concerning the skills possessed by at least one user comprises: referencing a table having a first field and second field wherein the first field stores a result after numerically evaluating at least two items of skill achievement level required in the vocational field in accordance with a certain evaluating method, and the second field stores a numerical standard value of each skill achievement level in the vocational field; comparing a value to be stored in the a first field with the value in the second field and displaying a user's skill achievement level based on the comparison.

Recorded medium on which program for displaying skill achievement level, display device, and displaying method

Semiconductor device, and method for manufacturing thereof

It is an object of the present invention to provide a device suitable for new usage by making use of a semiconductor device such as an RFID tag in terms of the capability to transmit and receive data without being contacted therewith, to decrease a burden on a user, and to improve convenience. A semiconductor device is provided to have an arithmetic processing circuit including a transistor, a conductive layer serving as an antenna, a detecting unit having a means for detecting physical quantity or chemical quantity, and a storage unit for storing data detected by the detecting unit, and to cover the arithmetic processing circuit, the conductive layer, the detecting unit, and the storage unit with a protective layer. In addition, diverse information can be monitored and controlled by providing such a semiconductor device for human beings, animals and plants, or the like without being contacted therewith.

半導体装置及びその作製方法

【課題】ＴＦＴにＬＤＤ領域を設ける場合には、半導体層に注入される不純物に濃度差を設けるために、マスクとなる絶縁膜を別途形成したり、ゲート電極の形状を工夫したりする必要があり、パターニング工程が自ずと増加してしまい、工程が複雑なものとなっていた。 【解決手段】 本発明は、チャネル領域、一対の不純物領域及び一対の低濃度不純物領域からなる半導体層と、ゲート絶縁膜を介して、前記半導体層に接して形成された、膜厚差を有する単層構造又は積層構造のゲート電極層を含むことを特徴としている。特に、膜厚差を有するゲート電極層は、液滴吐出法によって簡単に形成でき、液滴吐出法の利便性を最大限に活用することができる。 【選択図】図４

薄膜集積回路を封止する装置、ｉｃシート、ｉｃシートの巻物及びｉｃチップの作製方法

【課題】 薄膜集積回路の封止の際の製造効率の悪化を防止し、また、損傷や破壊を防止することを課題とする。 【解決手段】 薄膜集積回路を封止する第１及び第２の基体のうち一方の基体を加熱溶融状態で押し出しながら供給し、他方の基体の供給とＩＣチップの回収にはロールを用い、剥離処理と封止処理にローラーを用いる装置を提供する。ロールとローラーを回転させることにより、基板上に設けられた複数の薄膜集積回路を剥離し、剥離した薄膜集積回路を封止し、封止した薄膜集積回路を回収する作業を連続的に行うことができるため、製造効率を格段に向上させることができる。 【選択図】 図１

半導体装置及びその作製方法

【課題】バリア性を向上させ、小型化、薄型化および軽量化を実現させ、フレキシブル性をもたせた半導体装置の提供を課題とする。 【解決手段】一対の基板の内側の空間に複数のトランジスタを含む積層体を設けることにより、有害な物質の侵入を抑制し、バリア性を向上させた半導体装置を提供する。また、研削研磨を行うことによって薄膜化した一対の基板を用いることにより、小型化、薄型化、軽量化を実現した半導体装置を提供する。また、フレキシブル性をもたせ、高付加価値化を実現した半導体装置を提供する。 【選択図】図２

半導体装置

【課題】工程を簡略化し、作製費用を抑制し、歩留まりの低下を抑制することが可能な半導体装置を提供する。 【解決手段】アンテナ、記憶素子及びトランジスタの３つを含み、アンテナとして機能する導電層は、トランジスタ又は記憶素子が含む導電層と同じ層に設けることを特徴とする。上記特徴により、アンテナとして機能する導電層を形成する工程を独立して設ける必要がなく、アンテナとして機能する導電層を形成する工程と、他の素子の導電層を形成する工程を同時に行うことができる。従って、作製工程を簡略化し、作製費用を抑制し、歩留まりの低下を抑制することができる。 【選択図】図１

Display device with semiconductor memory cell

The present invention provides a display device including a nonvolatile memory circuit to which data can be added without increasing the number of manufacturing steps, and an electronic appliance using the display device. A display device of the present invention has a memory circuit that includes a memory element with a simple structure in which an organic compound layer is interposed between a pair of conductive layers. According to the present invention having the above mentioned structure, a display device having a nonvolatile memory circuit to which data can be added can be provided without increasing the number of manufacturing steps.

Orally disintegrating solid preparation

The present invention provides an orally-disintegrating solid preparation comprising fine granules showing controlled release of a pharmaceutically active ingredient, wherein the outermost layer of the fine granules is coated with a coating layer comprising hydroxypropylmethylcellulose and low-substituted hydroxypropylcellulose and breakage of the fine granules during tableting is suppressed.