21-01-2021 дата публикации
Номер: US20210017669A1
Автор:
Yen-Lun Huang,
Ke-Hong Su,
Ying-Ru Shih,
HUANG YEN-LUN,
SU KE-HONG,
SHIH YING-RU,
Huang, Yen-Lun,
Su, Ke-Hong,
Shih, Ying-Ru
Provided is a semiconductor epitaxial structure including a nucleation layer disposed on a substrate; a buffer layer disposed on the nucleation layer; a semiconductor layer disposed on the buffer layer; a barrier layer disposed on the semiconductor layer; and a cap layer disposed on the barrier layer. In a case where a bowing of the semiconductor epitaxial structure is less than or equal to +/−30 μm, a maximum value or a minimum value of a ratio of a thickness of the buffer layer to a thickness of the semiconductor layer is represented as following formula: Y=aX1−bX2+cX3, X1≥0 nm, X2≥750 nm, X3≥515 nm, wherein X1 is a thickness of the nucleation layer, X2 is the thickness of the buffer layer, X3 is the thickness of the semiconductor layer, a, b and c are constants respectively, and Y is a ratio of X3 to X2. 1. A semiconductor epitaxial structure , comprising:a substrate;a nucleation layer disposed on a substrate;a buffer layer disposed on the nucleation layer;a semiconductor layer disposed on the buffer layer;a barrier layer disposed on the semiconductor layer; and {'br': None, 'i': Y=aX', 'bX', 'cX', 'X', 'X', 'X, '1−2+3, 1≥0 nm, 2≥750 nm, 3≥515 nm,'}, 'a cap layer disposed on the barrier layer, wherein in a case where a bowing of the semiconductor epitaxial structure is less than or equal to +/−30 μm, a maximum value or a minimum value of a ratio of a thickness of the semiconductor layer to a thickness of the buffer layer is represented as a formula ofwherein X1 is a thickness of the nucleation layer, X2 is the thickness of the buffer layer, X3 is the thickness of the semiconductor layer, a, b and c are constants respectively, and Y is the ratio of the thickness of the semiconductor layer to the thickness of the buffer layer (X3/X2) and falls between the maximum value or the minimum value.2. The semiconductor epitaxial structure according to claim 1 , wherein the maximum value of the ratio of the thickness of the semiconductor layer to the thickness of the buffer ...
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