Semiconductor device

For a purpose of raising the breakdown voltage of a semiconductor device, the creepage distance and clearance between an electrode terminal and another metallic portion are preferably increased. A semiconductor device is provided, the semiconductor device including: a semiconductor element; a case portion that houses the semiconductor element; and an external terminal provided to a front surface of the case portion, wherein the front surface of the case portion has, formed thereon: a wall portion that protrudes from the front surface; and a hollow portion that is provided to a region surrounded by the wall portion and is depressed relative to the front surface, and the external terminal is arranged on a floor surface of the hollow portion.

Semiconductor device comprising a capacitor

A capacitor includes a case including a capacitor element, a first connection terminal, a second connection terminal, and a second insulating sheet formed between the first connection terminal and the second connection terminal, and the first connection terminal, the second insulating sheet, and the second connection terminal extend to the outside from the case. A semiconductor module includes a multi-layer terminal portion in which a first power terminal, a first insulating sheet, and a second power terminal are sequentially stacked. The first power terminal includes a first bonding area electrically connected to the first connection terminal, and the second power terminal includes a second bonding area electrically connected to the second connection terminal. The first insulating sheet includes a terrace portion that extends in a direction from the second bonding area towards the first bonding area in a planar view.

Semiconductor equipment

Semiconductor equipment includes semiconductor modules sealed with a resin, each having first and second connection terminals exposed from the resin, a capacitor including third and fourth connection terminals, a cooler directly contacting the semiconductor modules and the capacitor, a busbar including a first busbar connecting the first connection terminal to the third connection terminal, a second busbar connecting the second connection terminal to the fourth connection terminal, and a first insulating layer sandwiched by the first and second busbars, main surfaces of the first and second busbars being parallel to each other, a control circuit board configured to control the semiconductor modules, and a heat transfer component including a main body connected to the cooler, and a second insulating layer arranged on the main body, the main body being in contact with the busbar and the control circuit via the second insulating layer.

Semiconductor device having circuit board interposed between two conductor layers

A semiconductor device having a semiconductor module that includes a first conductor layer and a second conductor layer facing each other, a group of semiconductor elements that are formed between the first and second conductor layers, and are connected to the second conductor layer respectively via a group of conductor blocks, and a circuit board having one end portion thereof located in a space between the semiconductor elements and the second conductor layer. Each semiconductor element includes first and second main electrodes respectively formed on first and second main surfaces thereof, and a control electrode that is formed on the second main surface. The first main electrode is electrically connected to the first conductor layer. The second main electrode is electrically connected to the second conductor layer via the respective conductor block. The circuit board includes a first wiring layer electrically connected to the control electrodes of the semiconductor elements.

Semiconductor device

A semiconductor device having a semiconductor module. The semiconductor module includes first and second conductor layers facing each other, a first semiconductor element provided between the first and second conductor layers, positive and negative electrode terminals respectively provided on edge portions of the first and second conductor layers at a first side of the semiconductor module in a top view of the semiconductor module, control wiring that is electrically connected to the first control electrode, and that extends out of the first and second conductor layers at a second side of the semiconductor module that is opposite to the first side in the top view, and a control terminal that is electrically connected to the control wiring, that is positioned outside the first and second conductor layers in the top view, and that has an end portion that is aligned with the positive and negative electrode terminals.

Semiconductor module

A semiconductor module includes first to fourth semiconductor elements, each having an upper-surface electrode and a lower-surface electrode, first to fourth conductive layers, each extending in a first direction and being independently disposed side by side in a second direction orthogonal to the first direction, and an output terminal connected to the second and third conductive layers. The lower-surface electrodes of each of the first to fourth semiconductor elements are respectively conductively connected to the first to fourth conductive layers. The third conductive layer and the fourth conductive layer are disposed between the first conductive layer and the second conductive layer and are connected to the output terminal to have an equal potential.

Semiconductor device with lead frame including conductor plates arranged three-dimensionally

An electrical connection inside a semiconductor device is established by lead frames formed of plural conductor plates. The lead frames are disposed three-dimensionally so that the respective weld parts thereof are exposed toward a laser light source used in the laser welding. The laser welding is then performed by irradiating a laser beam. According to the above, welding can be performed readily in a reliable manner. The productivity of the semiconductor device and the manufacturing method of the semiconductor device can be thus enhanced. In addition, because the lead frames have the cooling effect, they have the capability of a heat spreader. It is thus possible to provide a semiconductor device and a manufacturing method of the semiconductor device with high productivity.

Power semiconductor module

A power semiconductor module includes a cooler; a plurality of power semiconductor units fixed on the cooler; and a bus bar unit connected electrically to the plurality of power semiconductor units. Each of the plurality of power semiconductor units includes a multilayered substrate including a circuit plate, an insulating plate, and a metal plate laminated in respective order; a semiconductor element fixed to the circuit plate; a wiring member having a printed circuit board and a plurality of conductive posts; external terminals connected electrically and mechanically to the circuit plate; and an insulating sealing material. The bus bar unit includes a plurality of bus bars mutually connecting the external terminals of the plurality of power semiconductor units.

Method and apparatus for integrating current sensors in a power semiconductor module

An improved system for measuring current within a power semiconductor module is disclosed, where the system is integrated within the power module. The system includes a point field detector sensing a magnetic field resulting from current flowing in one phase of the module. A lead frame conductor may be provided to shape the magnetic field and minimize the influence of cross-coupled magnetic fields from currents conducted in other power semiconductor devices within one phase of the module. Optionally, a second point field detector may be provided at a second location within the module to sense a magnetic field resulting from the current flowing in the same phase of the module. Each phase of the power module includes at least one point field detector. A decoupling circuit is provided to decouple multiple currents flowing within the same phase or to decouple currents flowing within different phases of the power module.

Packaging structure for bipolar transistor with constricted bumps

A semiconductor module includes a laminated substrate having an insulating plate, a circuit pattern arranged on an upper surface of the insulating plate and a heat dissipating plate arranged on a lower surface of the insulating plate. The semiconductor module also includes a semiconductor device having a collector electrode arranged on its upper surface, having an emitter electrode and a gate electrode arranged on its lower surface, and bumps respectively bonding the emitter electrode and the gate electrode to an upper surface of the circuit pattern. Each of the bumps is made of a metal sintered material such that the bump is formed to be constricted in its middle portion in a thickness direction orthogonal to a surface of the insulating plate.

Power semiconductor module

A power semiconductor module is equipped with: a frame made of an insulator; a first electrode plate made of a metal and fixed to a bottom opening of the frame; semiconductor chips electrically and physically connected to the first electrode plate; a multilayer substrate fixed to a principal surface of the first electrode plate; wiring members that electrically connect front surface electrodes of the semiconductor chips and a circuit plate of the multilayer substrate; a second electrode plate fixed to a top opening of the frame; and a metal block that has a first surface having a projected portion and a second surface disposed on a side opposite to the first surface and that is tapered from the first surface to the second surface, the projected portion being electrically and physically connected to the circuit plate of the multilayer substrate and the second surface being electrically and physically connected to the second electrode plate.

Cooler

A cooler of the present invention is provided with a case having a top plate, a bottom plate, and a side plate, cooling fins disposed inside the case, and a flow path for cooling fluid that comes into contact with the cooling fins and that flows through the interior of the case, the cooler cooling an object to be cooled in contact with the top plate or the bottom plate. The cooling fins have a shaft part and vane parts that protrude outward from the shaft part and extend spirally in the axial direction; the overall cooling fin configuration constituting a quadrangular column shape. The cooling fins are disposed in contact with at least the top plate and the bottom plate, and the flow path has a spiral-formed configuration formed by the vane parts, the top plate, and the bottom plate.

UNIT FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

A semiconductor device has a single unit capable of improving adhesion to a cooling body and a heat dissipation performance, and an aggregate of the single units is capable of configuring any circuit at a low cost. A single unit (101) includes copper blocks (1, 8), an insulating substrate (6) with a conductive pattern, an IGBT chip (10), a diode chip (13), a collector terminal pin (15), implant pins (17) fixed to the chips (10) by solder (11), a printed circuit board (16) having the implant pins (17) fixed thereto, an emitter terminal pin (19), a control terminal pin (20), a collector terminal pin (15), and a resin case (21) having the above-mentioned components sealed therein. The copper blocks (1, 8) make it possible to improve adhesion to a cooling body and the heat dissipation performance. A plurality of single units (101) can be combined with an inter-unit wiring board to form any circuit.

Semiconductor device

A semiconductor device encompasses a cooler made of ceramics, having a first main face and a second main face, being parallel and opposite to the first main face, defined by two opposite side faces perpendicular to the first and second main faces, a plurality of conductive-pattern layers delineated on the first main face, a semiconductor chip mounted on the first main face via one of the plurality of conductive-pattern layers, and a seal member configured to seal the semiconductor chip.

Method and apparatus for integrating current sensors in a power semiconductor module

An improved system for measuring current within a power semiconductor module is disclosed, where the system is integrated within the power module. The system includes a point field detector sensing a magnetic field resulting from current flowing in one phase of the module. A lead frame conductor may be provided to shape the magnetic field and minimize the influence of cross-coupled magnetic fields from currents conducted in other power semiconductor devices within one phase of the module. Optionally, a second point field detector may be provided at a second location within the module to sense a magnetic field resulting from the current flowing in the same phase of the module. Each phase of the power module includes at least one point field detector. A decoupling circuit is provided to decouple multiple currents flowing within the same phase or to decouple currents flowing within different phases of the power module.

Semiconductor module

A semiconductor module includes a case with a side wall in a first direction in which gate and source terminals are embodied and exposed therefrom, first and second semiconductor elements each having gate and source electrodes, gate and source relay layers positioned at a center between the first and second semiconductor elements in the first direction at a side of the semiconductor elements farther from the side wall, first gate and source wires respectively connecting the gate and source terminals to the gate and source relay layers, second gate and source wires, and third gate and source wires, respectively connecting the gate and source electrodes of the first semiconductor element, and the gate and source electrode of the second semiconductor element, to the gate and source relay layers. The first to third source wires are respectively located closer to the first to third gate wires than any other gate wires.

POWER SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING SAME

A power semiconductor module has an insulating layer; a copper base substrate having first and second copper blocks, either the first or the second copper block being fixed on one side and the other being fixed on the other side of the insulating layer; a plurality of power semiconductor elements using silicon carbide, and having one side fixed onto the first copper block with a conductive bond layer; a plurality of implant pins fixed to the other side of each of the plurality of power semiconductor elements with a conductive bond layer; a printed circuit board fixed to the implant pins and disposed to face the power semiconductor elements; a first sealing material containing no flame retardant, and disposed at least between the power semiconductor elements and the printed circuit board; and a second sealing material containing a flame retardant, and disposed to cover the first sealing material. 1. A power semiconductor module , comprising:an insulating layer;a copper base substrate having a first copper block and a second copper block, either the first or second copper block being fixed on one side and the other being fixed on the other side of the insulating layer;a plurality of power semiconductor elements using silicon carbide, each having one side fixed onto the first copper block with a conductive bond layer;a plurality of implant pins fixed to the other side of each of the plurality of power semiconductor elements with a conductive bond layer;a printed circuit board fixed to the implant pins and disposed to face the power semiconductor elements;a first sealing material containing no flame retardant, and disposed at least between the power semiconductor elements and the printed circuit board; anda second sealing material containing a flame retardant, and disposed to cover the first sealing material.2. The power semiconductor module according to claim 1 , wherein a heat distortion temperature of the first sealing material is 175° C. to 225° C.3. The power ...

Semiconductor device

In a semiconductor device, an insulated substrate is bonded with a cooling body with lowered thermal resistance without a holding unit. The semiconductor device includes an insulated substrate where a wiring pattern copper plate unit for forming a plurality of wiring patterns is disposed on one side of an insulating plate unit, and a heat radiation copper plate unit disposed on the other side of the insulating plate unit; a semiconductor chip mounted on the wiring pattern copper plate unit; a cooling body contacted with the heat radiation copper plate unit; and a wiring conductor plate connected between the semiconductor chip and the wiring pattern copper plate unit. The heat radiation copper plate unit and the cooling body are bonded with a metal sintered material, and thicknesses of the wiring pattern copper plate unit and the heat radiation copper plate unit are set to such thermal stress is relaxed.

Method for manufacturing a semiconductor device

A method for manufacturing a semiconductor device has a step of forming a first substrate; a step of facing a first main electrode to the first metal foil, and electrically connecting the first main electrode and the first metal foil; a step of facing a second main electrode to the second metal foil, and electrically connecting the second main electrode and the second metal foil; a step of forming a second substrate; and steps of facing a surface side of the second substrate to a surface side of the first substrate; electrically connecting the third metal foil and a third main electrode provided on a main surface of the first semiconductor element; and electrically connecting the fourth metal foil and a fourth main electrode provided on a main surface of the second semiconductor element.

Semiconductor device

Method and Apparatus for Integrating Current Sensors in a Power Semiconductor Module

An improved system for measuring current within a power semiconductor module is disclosed, where the system is integrated within the power module. The system includes a point field detector sensing a magnetic field resulting from current flowing in one phase of the module. A lead frame conductor may be provided to shape the magnetic field and minimize the influence of cross-coupled magnetic fields from currents conducted in other power semiconductor devices within one phase of the module. Optionally, a second point field detector may be provided at a second location within the module to sense a magnetic field resulting from the current flowing in the same phase of the module. Each phase of the power module includes at least one point field detector. A decoupling circuit is provided to decouple multiple currents flowing within the same phase or to decouple currents flowing within different phases of the power module. 1. A method for integrating a current sensor in a power semiconductor module , wherein the power semiconductor module includes at least one switching element selectively enabled at a switching frequency to conduct current through the power semiconductor module , the method comprising the steps of: the first electrical conductor has a definite spatial geometry between the first and the second electrical connection points,', 'the first electrical connection point is a conductive substrate to which one of the switching elements is connected, and', 'the second electrical connection point is an output terminal block;, 'connecting a first electrical conductor between a first electrical connection point and a second electrical connection point within the power semiconductor module, wherein the magnetic field detector generates a feedback signal corresponding to a magnetic field present at the magnetic field detector and generated in response to at least a first current and a second current,', 'the first current is conducted in the first electrical conductor, ...

Power semiconductor module and composite module

A power semiconductor module includes a wiring member that electrically connects a front surface electrode of a semiconductor element and a circuit board of an insulating substrate in a housing. A resin provided in the housing covers the wiring member, and has a height in the vicinity of the wiring member. A cover covering the periphery of external terminals is provided between the resin and a first lid in the housing. A second lid is provided further outside the first lid in an aperture portion of the housing, and the space between the second lid and the first lid is filled with another resin.

Semiconductor device and method for manufacturing the semiconductor device

A semiconductor device is disclosed in which an implant board and a semiconductor element of a semiconductor mounting board are bonded and electrically connected through implant pins and which can be manufactured with high productivity. Implant pins are bonded to a semiconductor element and/or a circuit pattern of a semiconductor mounting board through cylindrical terminals press-fitted into the other ends of the implant pins. Press-fitting depth L2 of each of the implant pins into corresponding cylindrical terminals is adjustable, so that total length of the implant pin and cylindrical terminal which are press-fitted to each other matches up with the distance between the semiconductor element and/or the circuit pattern on the semiconductor mounting board and an implant board.

Semiconductor module

A semiconductor module includes sealing resin from which a main terminal protrudes, which seals an insulating substrate. The module includes a semiconductor element and a wiring substrate. The sealing resin has a nut housing portion in which a nut is disposed. The semiconductor module also has a busbar terminal to which a main terminal that protrudes from the sealing resin is electrically connected and which has an insertion hole facing the nut.

Semiconductor device and method of manufacturing semiconductor device

A semiconductor device, including a conductive plate having a front surface that includes a plurality of bonding regions and a plurality of non-bonding regions in peripheries of the bonding regions, a plurality of semiconductor elements mounted on the conductive plate in the bonding regions, and a resin encapsulating therein at least the plurality of semiconductor elements and the front surface of the conductive plate. The conductive plate has, at the front surface thereof in the non-bonding regions, a plurality of holes.

Semiconductor module

A semiconductor module includes a first semiconductor element and a second semiconductor element each having an upper-surface electrode and a lower-surface electrode, and being connected in parallel to configure an upper arm, a first conductive layer having a U-shape in planar view, having two end portions, and having an upper surface on which the first semiconductor element and the second semiconductor element are disposed in a mirror image arrangement, a positive electrode terminal having a body part and at least two positive electrode ends branched from the body part, and a negative electrode terminal having a negative electrode end disposed between the positive electrode ends. The positive electrode ends are respectively connected to one of the two end portions of the first conductive layer.

Semiconductor module

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

An electrical connection inside a semiconductor device is established by lead frames formed of plural conductor plates. The lead frames are disposed three-dimensionally so that the respective weld parts thereof are exposed toward a laser light source used in the laser welding. The laser welding is then performed by irradiating a laser beam. According to the above, welding can be performed readily in a reliable manner. The productivity of the semiconductor device and the manufacturing method of the semiconductor device can be thus enhanced. In addition, because the lead frames have the cooling effect, they have the capability of a heat spreader. It is thus possible to provide a semiconductor device and a manufacturing method of the semiconductor device with high productivity.

Semiconductor device and method for manufacturing the semiconductor device

A semiconductor device is disclosed in which an implant board and a semiconductor element of a semiconductor mounting board are bonded and electrically connected through implant pins and which can be manufactured with high productivity. Implant pins are bonded to a semiconductor element and/or a circuit pattern of a semiconductor mounting board through cylindrical terminals press-fitted into the other ends of the implant pins. Press-fitting depth L2 of each of the implant pins into corresponding cylindrical terminals is adjustable, so that total length of the implant pin and cylindrical terminal which are press-fitted to each other matches up with the distance between the semiconductor element and/or the circuit pattern on the semiconductor mounting board and an implant board.

Semiconductor apparatus

A semiconductor apparatus equipped with at least one semiconductor element includes a metallic plate bonded to an upper surface of the semiconductor element and a conductor plate, bonded to the metallic plate and serving as an electric current path of the semiconductor apparatus. The conductor plate and the metallic plate are bonded to each other by laser welding at a part other than a part directly above the semiconductor element. As a result, heat damage caused by laser welding can be reduced.

Unit for semiconductor device and semiconductor device

A semiconductor device has a single unit capable of improving adhesion to a cooling body and a heat dissipation performance, and an aggregate of the single units is capable of configuring any circuit at a low cost. A single unit (101) includes copper blocks (1, 8), an insulating substrate (6) with a conductive pattern, an IGBT chip (10), a diode chip (13), a collector terminal pin (15), implant pins (17) fixed to the chips (10) by solder (11), a printed circuit board (16) having the implant pins (17) fixed thereto, an emitter terminal pin (19), a control terminal pin (20), a collector terminal pin (15), and a resin case (21) having the above-mentioned components sealed therein. The copper blocks (1, 8) make it possible to improve adhesion to a cooling body and the heat dissipation performance. A plurality of single units (101) can be combined with an inter-unit wiring board to form any circuit.

Semiconductor device comprising a capacitor

A capacitor includes a case including a capacitor element, a first connection terminal, a second connection terminal, and a second insulating sheet formed between the first connection terminal and the second connection terminal, and the first connection terminal, the second insulating sheet, and the second connection terminal extend to the outside from the case. A semiconductor module includes a multi-layer terminal portion in which a first power terminal, a first insulating sheet, and a second power terminal are sequentially stacked. The first power terminal includes a first bonding area electrically connected to the first connection terminal, and the second power terminal includes a second bonding area electrically connected to the second connection terminal. The first insulating sheet includes a terrace portion that extends in a direction from the second bonding area towards the first bonding area in a planar view.

Semiconductor device

A semiconductor device includes a first metal foil, an insulating sheet mounted on an upper surface of the first metal foil main, at least one second metal foil mounted on the insulating sheet, at least one solder layer mounted on the at least one second metal foil, and at least one semiconductor element mounted on the at least one second metal foil through the at least one solder layer. The at least one semiconductor has a thickness of 50 m or greater and less than 100 m.

Power semiconductor module

A power semiconductor module has an insulating layer; a copper base substrate having first and second copper blocks, either the first or the second copper block being fixed on one side and the other being fixed on the other side of the insulating layer; a plurality of power semiconductor elements using silicon carbide, and having one side fixed onto the first copper block with a conductive bond layer; a plurality of implant pins fixed to the other side of each of the plurality of power semiconductor elements with a conductive bond layer; a printed circuit board fixed to the implant pins and disposed to face the power semiconductor elements; a first sealing material containing no flame retardant, and disposed at least between the power semiconductor elements and the printed circuit board; and a second sealing material containing a flame retardant, and disposed to cover the first sealing material.

Semiconductor device and method for manufacturing semiconductor device

A semiconductor device includes a first metal foil, an insulating sheet mounted on an upper surface of the first metal foil main, at least one second metal foil mounted on the insulating sheet, at least one solder layer mounted on the at least one second metal foil, and at least one semiconductor element mounted on the at least one second metal foil through the at least one solder layer. The at least one semiconductor has a thickness of 50 μm or greater and less than 100 μm.

Cooler and semiconductor module

Provided is a cooler having high cooling efficiency and low pressure loss of fluid. A cooler includes: a flow-channel part at least including a plate-like fin (top plate) and a plate-like fin (bottom plate); and a continuous groove-like flow channel defined between the top plate and the bottom plate to flow fluid, the cooler being configured to cool semiconductor elements. When the flow-channel part is viewed from the direction parallel to the top plate and intersecting the flow channel, the flow channel has a corrugated shape so that a face of the flow channel closer to the top plate and a face of the flow channel closer to the bottom plate bend in a synchronized manner toward the top plate and the bottom plate.

Semiconductor device with a laser-connected terminal

A semiconductor device, including a capacitor, a semiconductor module having a first power terminal formed on a front surface of a first insulating member, and a connecting member electrically connecting and mechanically coupling the semiconductor module and the capacitor to each other, the connecting member having a front surface and a rear surface opposite to each other, the rear surface being on a front surface of the first power terminal. The connecting member is bonded to the semiconductor module via a first welded portion, which penetrates the front and rear surfaces of the connecting member, and penetrates the front surface of the first power terminal, in a thickness direction of the semiconductor device, a distance in the thickness direction between a bottommost portion of first welded portion and the front surface of the first insulating member being 0.3 mm or more.

Power semiconductor module

Embodiments of the invention provide a power semiconductor module wherein it is possible to reduce switching noise generated in a switching element, and at the same time, to reduce thermal resistance between a power semiconductor chip and an insulating substrate. In some embodiments, by a capacitor being installed between a printed substrate and an insulating substrate so as to be adjacent to a power semiconductor chip which is a switching element, it is possible to reduce switching noise generated in the switching element, and furthermore, it is possible to reduce thermal resistance between the power semiconductor chip and insulating substrate.

Semiconductor module

A semiconductor module includes a plurality of semiconductor chips that include gate electrodes on front surfaces, a gate terminal that receives a control signal from outside, and a print substrate. The print substrate includes a gate wiring layer that separates the control signal that is input into the gate terminal and passes the control signal to the gate electrodes of the semiconductor chips, and a cross-sectional area of the gate wiring layer becomes larger as the gate wiring layer gets closer to the gate terminal from the gate electrodes.

Unit for semiconductor device

A semiconductor device has a single unit capable of improving adhesion to a cooling body and a heat dissipation performance, and an aggregate of the single units is capable of configuring any circuit at a low cost. A single unit includes copper blocks, an insulating substrate with a conductive pattern, an IGBT chip, a diode chip, a collector terminal pin, implant pins fixed to the chips by solder, a printed circuit board having the implant pins fixed thereto, an emitter terminal pin, a control terminal pin, a collector terminal pin, and a resin case having the above-mentioned components sealed therein. The copper blocks make it possible to improve adhesion to a cooling body and the heat dissipation performance. A plurality of single units can be combined with an inter-unit wiring board to form any circuit.

Semiconductor device manufacturing method

A semiconductor device manufacturing method includes the steps of preparing a semiconductor element having a first electrode, a second electrode, and a third electrode facing the first electrode and second electrode, the first electrode and second electrode being electrically separated by an insulating layer; arranging a first conductive bonding material on a first metal foil and placing the semiconductor element on the first conductive bonding material; supporting a sheet-shape second conductive bonding material by the insulating layer; arranging a first post electrode and a second post electrode above the first and second electrodes respectively with the second conductive bonding material intervening therebetween; and forming a first conductive bonding layer for bonding the first electrode and the first post electrode, a second conductive bonding layer for bonding the second electrode and the second post electrode, and a third conductive bonding layer for bonding the third electrode and ...

Semiconductor module

In a semiconductor module, second semiconductor chips (e.g., diodes) are disposed closer to a laminated substrate than first semiconductor chips (MOSFETs). When a control signal supplied to gate electrodes of the first semiconductor chips (MOSFETs) is off, an electric current produced by a voltage from source terminals to a drain board mainly flows through the second semiconductor chips.

Semiconductor device

A semiconductor device includes an insulating substrate having a first conductive pattern on a first insulating substrate; a first semiconductor element having one surface fixed to the first conductive pattern; a printed circuit board having a conductive layer on a second insulating substrate and a plurality of metal pins fixed to the conductive layer; and a third insulating substrate. A portion of pins constituting the metal pins is fixed to other surface of the first semiconductor element, and the printed circuit board with the metal pins is sandwiched between the insulating substrate having the first conductive pattern and the third insulating substrate.

Semiconductor module

A semiconductor module includes an insulating substrate having a main wiring layer, positive and negative electrode terminals adjacently arranged in a first direction, a plurality of semiconductor elements forming a first column and another plurality of semiconductor elements forming a second column, each semiconductor element having gate and source electrode on an upper surface thereof, and being disposed on the main wiring layer such that corresponding ones of the gate electrodes in the first and second columns face each other in a second direction orthogonal to the first direction, a control wiring substrate between the first and second columns and having gate and source wiring layers, a gate wiring member connecting ones of the gate electrodes in the first and second columns through the gate wiring layer, and a source wiring member connecting ones of the source electrodes in the first and second columns through the source wiring layer.

Semiconductor device

The object of the present invention is to efficiently dissipate heat from the upper and lower main surfaces of a semiconductor device carrying a semiconductor element. A semiconductor device (1) is provided with an insulating substrate (10A), an insulating substrate (10B) provided so as to face the insulating substrate (10A), and a semiconductor element (20) disposed between the insulating substrate (10A) and the insulating substrate (10B) and having a collector electrode and an emitter electrode provided on the side opposite to that of the collector electrode. The collector electrode is electrically connected to a metal foil (10ac) provided on the insulating substrate (10A), and the emitter electrode is electrically connected to the metal foil (10bc) provided on the insulating substrate (10B). As a result, heat generated by the semiconductor element (20) is efficiently dissipated from the upper and lower main surfaces of the semiconductor device (1).

Power semiconductor module

A power semiconductor module is equipped with: a metal base; semiconductor chips electrically connected with and fixed to the metal base; and an insulating substrate fixed to the metal base and having a circuit plate on one surface. Additionally, the power semiconductor module is further equipped with a circuit board that is provided so as to face the semiconductor chips and the insulating substrate and that electrically connects electrodes of the semiconductor chips and the circuit plate of the insulating substrate. Further, the power semiconductor module is equipped with a conductive post that is electrically connected to at least one of either the electrodes of the semiconductor chips or the circuit plate of the insulating substrate while being electrically connected to the metal film of the circuit board.

Semiconductor device manufacturing method

A semiconductor device manufacturing method includes the steps of preparing a semiconductor element having a first electrode, a second electrode, and a third electrode facing the first electrode and second electrode, the first electrode and second electrode being electrically separated by an insulating layer; arranging a first conductive bonding material on a first metal foil and placing the semiconductor element on the first conductive bonding material; supporting a sheet-shape second conductive bonding material by the insulating layer; arranging a first post electrode and a second post electrode above the first and second electrodes respectively with the second conductive bonding material intervening therebetween; and forming a first conductive bonding layer for bonding the first electrode and the first post electrode, a second conductive bonding layer for bonding the second electrode and the second post electrode, and a third conductive bonding layer for bonding the third electrode and ...

Method and Apparatus for Integrating Current Sensors in a Power Semiconductor Module

An improved system for measuring current within a power semiconductor module is disclosed, where the system is integrated within the power module. The system includes a point field detector sensing a magnetic field resulting from current flowing in one phase of the module. A lead frame conductor may be provided to shape the magnetic field and minimize the influence of cross-coupled magnetic fields from currents conducted in other power semiconductor devices within one phase of the module. Optionally, a second point field detector may be provided at a second location within the module to sense a magnetic field resulting from the current flowing in the same phase of the module. Each phase of the power module includes at least one point field detector. A decoupling circuit is provided to decouple multiple currents flowing within the same phase or to decouple currents flowing within different phases of the power module.

Semiconductor device, method for manufacturing semiconductor device, and interface unit

A semiconductor device includes a base plate, a plurality of semiconductor units provided in parallel on the base plate, the plurality of semiconductor units implementing a pair, each semiconductor unit including a semiconductor chip and a rod-shaped unit-side control terminal, the unit-side control terminal being connected to the semiconductor chip, the unit-side control terminal extending opposite to the base plate; and an interface unit including a box-shaped accommodating portion, the accommodating portion being provided on the plurality of semiconductor units, the accommodating portion including an internal wiring and a rod-shaped external-connecting control terminal, the internal wiring being connected to each of the plurality of the unit-side control terminals extending from the plurality of semiconductor units, the external-connecting control terminal extending to the outside opposite to the semiconductor units, the external-connecting control terminal being connected to the internal ...

Semiconductor device

A semiconductor device includes an insulating substrate having an insulating plate and a circuit plate; a semiconductor chip having a front surface provided with a gate electrode and a source electrode, and a rear surface fixed to the circuit plate; a printed circuit board facing the insulating substrate, and including a first metal layer and a second metal layer; a first conductive post having two ends electrically and mechanically connected to the gate electrode and the first metal layer; a second conductive post having two ends electrically and mechanically connected to the source electrode and the second metal layer; and a circuit impedance reducing element electrically connected between the gate electrode and the source electrode through the first conductive post and the second conductive post.

Semiconductor module having block electrode bonded to collector electrode and manufacturing method thereof

A semiconductor module includes a laminated substrate having an insulating plate, a circuit pattern on an upper surface of the insulating plate and a heat dissipating plate on a lower surface of the insulating plate. The module further includes a semiconductor device having upper and lower surfaces, and including a collector electrode on the device upper surface, an emitter electrode and a gate electrode on the device lower surface, and the emitter electrode and the gate electrode each being bonded to an upper surface of the circuit pattern via a bump, and a block electrode bonded to the collector electrode. The block electrode includes a flat plate portion covering over the semiconductor device, and a pair of projecting portions projecting toward the circuit pattern from both ends of the flat plate portion in a thickness direction orthogonal to a surface of the insulating plate, and being bonded to the circuit pattern.

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

The object of the present invention is to efficiently dissipate heat from the upper and lower main surfaces of a semiconductor device carrying a semiconductor element. A semiconductor device ( 1 ) is provided with an insulating substrate ( 10 A), an insulating substrate ( 10 B) provided so as to face the insulating substrate ( 10 A), and a semiconductor element ( 20 ) disposed between the insulating substrate ( 10 A) and the insulating substrate ( 10 B) and having a collector electrode and an emitter electrode provided on the side opposite to that of the collector electrode. The collector electrode is electrically connected to a metal foil ( 10 ac ) provided on the insulating substrate ( 10 A), and the emitter electrode is electrically connected to the metal foil ( 10 bc ) provided on the insulating substrate ( 10 B). As a result, heat generated by the semiconductor element ( 20 ) is efficiently dissipated from the upper and lower main surfaces of the semiconductor device ( 1 ).

SEMICONDUCTOR DEVICE

Semiconductor chips are disposed on an insulating substrate with conductive patterns, and a printed circuit board with metal pins is disposed above the insulating substrate with conductive patterns, with the semiconductor chips therebetween. A plurality of external lead terminals is fixed to the insulating substrate with conductive patterns, with the plurality of external lead terminals disposed adjacent to each other in parallel. Furthermore, metal foil pieces, formed on front and rear surfaces of the printed circuit board with metal pins respectively so as to face each other, are disposed above the semiconductor chips. 1. A semiconductor device , comprising:an insulating substrate with conductive patterns, having at least a first conductive pattern, a second conductive pattern, and a third conductive pattern, on a first insulating substrate;a positive-electrode external lead terminal fixed to the first conductive pattern;a negative-electrode external lead terminal fixed to the second conductive pattern;an external lead terminal of intermediate potential fixed to the third conductive pattern;a first semiconductor element having one surface fixed to the first conductive pattern;a second semiconductor element having one surface fixed to the third conductive pattern; andan insulating substrate with conductive pins, having conductive layers on front and rear surfaces of a second insulating substrate respectively, a plurality of first conductive pins fixed to the conductive layer on the rear surface of the second insulating substrate, and a plurality of second conductive pins fixed to the conductive layer on the front surface of the second insulating substrate,wherein the positive-electrode external lead terminal and the negative-electrode external lead terminal are disposed adjacent to each other in parallel,a portion of the pins constituting the first conductive pins is fixed to the other surface of the first semiconductor element, and the other pins constituting the ...

Semiconductor module and semiconductor device

A semiconductor module includes a semiconductor element having a gate electrode and source electrode on the front surface, and a drain electrode on the rear surface, the drain electrode being electrically connected to the front surface of a drain plate; a laminated substrate having, on the front surface of an insulating plate, a first circuit plate to which the gate electrode is electrically connected, and a second circuit plate to which the source electrode is electrically connected, and which is disposed on the front surface of the drain plate; a gate terminal disposed on the first circuit plate; a source terminal disposed on the second circuit plate; and a cover disposed opposite to the front surface of the drain plate, and having an opening in which the gate terminal and the source terminal are positioned and a guide groove contacting the opening and extending to the outer peripheral portion.

Semiconductor module

A semiconductor module, including a board that has first and second conductive plates located side by side on a first insulating plate, a first external connection terminal located on the first conductive plate, first and second semiconductor chips respectively disposed on the first and second conductive plates, and a printed-circuit board including a second insulating plate and first and second wiring boards located on a first principal plane of the second insulating plate. The first wiring board electrically connects an upper surface electrode of the first semiconductor chip and a relay area on the second conductive plate. The second wiring board is electrically connected to an upper surface electrode of the second semiconductor chip. The semiconductor module further includes a second external connection terminal electrically connected to an end portion of the second wiring board and formed on the second principal plane of the second insulating plate.

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

A method for manufacturing a semiconductor device has a step of forming a first substrate; a step of facing a first main electrode to the first metal foil, and electrically connecting the first main electrode and the first metal foil; a step of facing a second main electrode to the second metal foil, and electrically connecting the second main electrode and the second metal foil; a step of forming a second substrate; and steps of facing a surface side of the second substrate to a surface side of the first substrate; electrically connecting the third metal foil and a third main electrode provided on a main surface of the first semiconductor element; and electrically connecting the fourth metal foil and a fourth main electrode provided on a main surface of the second semiconductor element. 1. A method for manufacturing a semiconductor device , comprising:a step of forming a first substrate by providing a first metal foil and a second metal foil on one main surface of a first insulating plate;a step of facing a first main electrode, provided on one main surface of a first semiconductor element, to the first metal foil, and electrically connecting the first main electrode and the first metal foil;a step of facing a second main electrode, provided on one main surface of a second semiconductor element, to the second metal foil, and electrically connecting the second main electrode and the second metal foil;a step of forming a second substrate by providing a third metal foil and a fourth metal foil on one main surface of a second insulating plate; andsteps of facing a surface side of the second substrate, where the third metal foil and the fourth metal foil are provided, to a surface side of the first substrate, where the first semiconductor element and the second semiconductor element are disposed; electrically connecting the third metal foil and a third main electrode provided on a main surface of the first semiconductor element, which is on a side opposite to that of ...

POWER SEMICONDUCTOR MODULE

Embodiments of the invention provide a power semiconductor module wherein it is possible to reduce switching noise generated in a switching element, and at the same time, to reduce thermal resistance between a power semiconductor chip and an insulating substrate. In some embodiments, by a capacitor being installed between a printed substrate and an insulating substrate so as to be adjacent to a power semiconductor chip which is a switching element, it is possible to reduce switching noise generated in the switching element, and furthermore, it is possible to reduce thermal resistance between the power semiconductor chip and insulating substrate. 1. A power semiconductor module , comprising an upper substrate and a lower substrate on the top of which a power semiconductor chip is mounted , whereinthe power semiconductor chip and upper substrate are connected by conductors, and a capacitor connected in parallel circuit-wise to a power semiconductor corresponding to the power semiconductor chip connects the upper substrate and lower substrate.2. The power semiconductor module according to claim 1 , whereinthe capacitor is formed of a plurality of capacitors connected in parallel.3. The power semiconductor module according to claim 1 , whereinthe distance between the power semiconductor chip and capacitor is 0.3 mm or more and 10 mm or less.4. The power semiconductor module according to claim 1 , whereinthe thermal resistance of a path from the top of the power semiconductor chip via the conductors, upper substrate, and capacitor to the bottom of the lower substrate is 0.3° C./W or less.5. The power semiconductor module according to claim 1 , whereinthe capacitance of the capacitor is from 10 pF to 1 μF.6. The power semiconductor module according to claim 2 , whereinthe combined capacitance of the plurality of capacitors is from 10 pF to 1 μF.7. The power semiconductor module according to claim 1 , whereinthe upper substrate is a printed substrate, the lower substrate ...

SEMICONDUCTOR MODULE

In a semiconductor module, second semiconductor chips (e.g., diodes) are disposed closer to a laminated substrate than first semiconductor chips (MOSFETs). When a control signal supplied to gate electrodes of the first semiconductor chips (MOSFETs) is off, an electric current produced by a voltage from source terminals to a drain board mainly flows through the second semiconductor chips. 1. A semiconductor module comprising:a drain board having a front surface and a back surface that receives an electric current supplied from outside;a laminated substrate including an insulating plate and a circuit board and being disposed on the front surface of the drain board, the insulating plate having a front surface and a back surface joined to the drain board, the circuit board being disposed on the front surface of the insulating plate;a first semiconductor chip including a switching element made of a wide-bandgap semiconductor and having a gate electrode and a source electrode on a front surface of the first semiconductor chip and a drain electrode on a back surface of the first semiconductor chip and being disposed on the front surface of the drain board, the drain electrode being electrically connected to the drain board;a second semiconductor chip including a diode element and having an anode electrode on a front surface of the second semiconductor chip and a cathode electrode on a back surface of the second semiconductor chip and being disposed between the first semiconductor chip and the laminated substrate on the front surface of the drain board, the cathode electrode being electrically connected to the drain board;a connecting member configured to electrically connect the source electrode of the first semiconductor chip and the circuit board and to electrically connect the anode electrode of the second semiconductor chip and the circuit board; anda source terminal disposed on the circuit board and configured to output the electric current, the electric current being ...

Semiconductor device and method of manufacturing semiconductor device

A semiconductor device, including a conductive plate having a front surface that includes a plurality of bonding regions and a plurality of non-bonding regions in peripheries of the bonding regions, a plurality of semiconductor elements mounted on the conductive plate in the bonding regions, and a resin encapsulating therein at least the plurality of semiconductor elements and the front surface of the conductive plate. The conductive plate has, at the front surface thereof in the non-bonding regions, a plurality of holes.

HEAT EXCHANGER

A cooling device includes a body having a flow passage for a heating medium that passes through the body, a first header made of a resin that has an inlet and covers a first end, and a second header made of a resin that has an outlet and covers a second end. The body has a front face, a back face, a first side face, and a second side face. The body and the first header are bonded to a first bonding face, a second bonding face, a third bonding face, and a fourth bonding face. The third bonding face is a curved surface that protrudes toward a +Y side. The fourth bonding face is a curved surface that protrudes toward a −Y side. 1. A heat exchanger comprising:a body made of a metal and having a flow passage for a heating medium that passes through the body in a first direction; anda first header made of a resin that has a first port as one of an inlet and an outlet that are connected to the flow passage, and covers a first end positioned on one side of the body in the first direction,the body having:a front face extending in a second direction that is intersected with the first direction, and the first direction;a back face on a side opposite to the front face in a third direction that is intersected with both the first direction and the second direction;a first side face that is on one side of the second direction, and is connected to a first edge of the front face and a first edge of the back face; anda second side face that is on another side of the second direction, and is connected to a second edge of the front face and a second edge of the back face,the body and the first header being bonded to a first bonding face as a part of the front face, a second bonding face as a part of the back face, a third bonding face as a part of the first side face, and a fourth bonding face as a part of the second side face,the third bonding face being a curved surface that protrudes in the second direction further than the first edge of the front face and the first edge of the back ...

SEMICONDUCTOR DEVICE

For a purpose of raising the breakdown voltage of a semiconductor device, the creepage distance and clearance between an electrode terminal and another metallic portion are preferably increased. A semiconductor device is provided, the semiconductor device including: a semiconductor element; a case portion that houses the semiconductor element; and an external terminal provided to a front surface of the case portion, wherein the front surface of the case portion has, formed thereon: a wall portion that protrudes from the front surface; and a hollow portion that is provided to a region surrounded by the wall portion and is depressed relative to the front surface, and the external terminal is arranged on a floor surface of the hollow portion. 1. A semiconductor device comprising:a semiconductor element;a case portion that houses the semiconductor element; andan external terminal provided to a front surface of the case portion, wherein a wall portion that protrudes from the front surface; and', 'a hollow portion that is provided to a region surrounded by the wall portion and is depressed relative to the front surface, and, 'the front surface of the case portion has, formed thereonthe external terminal is arranged on a floor surface of the hollow portion.2. The semiconductor device according to claim 1 , wherein an external terminal is not provided to the wall portion.3. The semiconductor device according to claim 1 , wherein an upper end of the external terminal is provided in the hollow portion.4. The semiconductor device according to claim 1 , wherein at least a partial region of the external terminal extends in a direction inclined relative to a normal line of the front surface of the case portion.5. The semiconductor device according to claim 1 , wherein a depth of the hollow portion from the front surface to the floor surface of the hollow portion is larger than a height of the wall portion from the front surface to an upper surface of the wall portion.6. The ...

Semiconductor device

A semiconductor device includes an insulating substrate having an insulating plate and a circuit plate; a semiconductor chip having a front surface provided with a gate electrode and a source electrode, and a rear surface fixed to the circuit plate; a printed circuit board facing the insulating substrate, and including a first metal layer and a second metal layer; a first conductive post having two ends electrically and mechanically connected to the gate electrode and the first metal layer; a second conductive post having two ends electrically and mechanically connected to the source electrode and the second metal layer; and a circuit impedance reducing element electrically connected between the gate electrode and the source electrode through the first conductive post and the second conductive post.

Unit for semiconductor device and semiconductor device

A semiconductor device has a single unit capable of improving adhesion to a cooling body and a heat dissipation performance, and an aggregate of the single units is capable of configuring any circuit at a low cost. A single unit includes copper blocks, an insulating substrate with a conductive pattern, an IGBT chip, a diode chip, a collector terminal pin, implant pins fixed to the chips by solder, a printed circuit board having the implant pins fixed thereto, an emitter terminal pin, a control terminal pin, a collector terminal pin, and a resin case having the above-mentioned components sealed therein. The copper blocks make it possible to improve adhesion to a cooling body and the heat dissipation performance. A plurality of single units can be combined with an inter-unit wiring board to form any circuit.

SEMICONDUCTOR MODULE AND METHOD OF FABRICATING SAME

A semiconductor module having a first metal wiring board, a second metal wiring board, a third metal wiring board, and a first semiconductor element and a second semiconductor element that each include an emitter electrode and a collector electrode. The second metal wiring board is disposed over a principal surface of the first metal wiring board with an insulation material therebetween. The third metal wiring board has a principal surface thereof facing the first metal wiring board. The first and second semiconductor elements are disposed to face directions opposite to each other. The collector electrodes of the first and second semiconductor elements respectively face the principal surfaces of the first and third metal wiring boards. The emitter electrodes of the first and second semiconductor elements are respectively connected to the principal surfaces of the third and second metal wiring boards. 1. A semiconductor module having an N terminal , a P terminal and an output terminal , comprising:a first metal wiring board having a principal surface, the first metal wiring board forming the P terminal;a second metal wiring board having a principal surface and disposed over the principal surface of the first metal wiring board with an insulation material therebetween, the second metal wiring board forming the N terminal;a third metal wiring board that has a principal surface facing the first metal wiring board, the third metal wiring board forming the output terminal;a first semiconductor element that includes an emitter electrode, and a collector electrode facing the principal surface of the first metal wiring board; anda second semiconductor element that includes an emitter electrode, and a collector electrode facing the principal surface of the third metal wiring board, whereinthe first and second semiconductor elements are disposed to face directions opposite to each other,the emitter electrode of the first semiconductor element is connected to the principal ...

Semiconductor module

A semiconductor module, including a board that has first and second conductive plates located side by side on a first insulating plate, a first external connection terminal located on the first conductive plate, first and second semiconductor chips respectively disposed on the first and second conductive plates, and a printed-circuit board including a second insulating plate and first and second wiring boards located on a first principal plane of the second insulating plate. The first wiring board electrically connects an upper surface electrode of the first semiconductor chip and a relay area on the second conductive plate. The second wiring board is electrically connected to an upper surface electrode of the second semiconductor chip. The semiconductor module further includes a second external connection terminal electrically connected to an end portion of the second wiring board and formed on the second principal plane of the second insulating plate.

Semiconductor equipment

Semiconductor equipment includes semiconductor modules sealed with a resin, each having first and second connection terminals exposed from the resin, a capacitor including third and fourth connection terminals, a cooler directly contacting the semiconductor modules and the capacitor, a busbar including a first busbar connecting the first connection terminal to the third connection terminal, a second busbar connecting the second connection terminal to the fourth connection terminal, and a first insulating layer sandwiched by the first and second busbars, main surfaces of the first and second busbars being parallel to each other, a control circuit board configured to control the semiconductor modules, and a heat transfer component including a main body connected to the cooler, and a second insulating layer arranged on the main body, the main body being in contact with the busbar and the control circuit via the second insulating layer.

SEMICONDUCTOR DEVICE

A semiconductor device having a semiconductor module. The semiconductor module includes first and second conductor layers facing each other, a first semiconductor element provided between the first and second conductor layers, positive and negative electrode terminals respectively provided on edge portions of the first and second conductor layers at a first side of the semiconductor module in a top view of the semiconductor module, control wiring that is electrically connected to the first control electrode, and that extends out of the first and second conductor layers at a second side of the semiconductor module that is opposite to the first side in the top view, and a control terminal that is electrically connected to the control wiring, that is positioned outside the first and second conductor layers in the top view, and that has an end portion that is aligned with the positive and negative electrode terminals. 1. A semiconductor device , comprising: a first conductor layer;', 'a second conductor layer that faces the first conductor layer;', a first control electrode,', 'a first positive electrode electrically connected to the first conductor layer, and', 'a first negative electrode electrically connected to the second conductor layer;, 'a first semiconductor element that is provided between the first conductor layer and the second conductor layer, and that has'}, 'a positive electrode terminal provided on an edge portion of the first conductor layer at a first side of the semiconductor module in a top view of the semiconductor module;', 'a negative electrode terminal provided on an edge portion of the second conductor layer at the first side of the semiconductor module in the top view thereof;', 'control wiring that is electrically connected to the first control electrode, and that extends out of the first conductor layer and the second conductor layer at a second side of the semiconductor module that is opposite to the first side in the top view; and', 'a ...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE

A semiconductor device is disclosed in which an implant board and a semiconductor element of a semiconductor mounting board are bonded and electrically connected through implant pins and which can be manufactured with high productivity. Implant pins are bonded to a semiconductor element and/or a circuit pattern of a semiconductor mounting board through cylindrical terminals press-fitted into the other ends of the implant pins. Press-fitting depth L of each of the implant pins into corresponding cylindrical terminals is adjustable, so that total length of the implant pin and cylindrical terminal which are press-fitted to each other matches up with the distance between the semiconductor element and/or the circuit pattern on the semiconductor mounting board and an implant board. 1. A semiconductor device comprising:a semiconductor mounting board in which a semiconductor element is mounted on an insulating wiring board, the semiconductor mounting board having a circuit pattern;an implant board in which via holes for electrical connection are provided in an insulating substrate having a printed wiring, andimplant pins, first ends of which are press-fitted into the via holes and second ends of which are bonded to the semiconductor element and/or the circuit pattern of the semiconductor mounting board such that there is an electrical connection to the semiconductor element of the semiconductor mounting board,wherein the implant pins are bonded to the semiconductor element and/or the circuit pattern of the semiconductor mounting board through cylindrical terminals press-fitted onto the second ends of the implant pins, and a depth with which each of the implant pins is press-fitted into corresponding ones of the cylindrical terminals can be adjusted so that total length of the implant pin and the cylindrical terminal which are press-fitted to each other match up with a distance between the semiconductor element and/or the circuit pattern on the semiconductor mounting board ...

Semiconductor device having circuit board interposed between two conductor layers

A semiconductor device having a semiconductor module that includes a first conductor layer and a second conductor layer facing each other, a group of semiconductor elements that are formed between the first and second conductor layers, and are connected to the second conductor layer respectively via a group of conductor blocks, and a circuit board having one end portion thereof located in a space between the semiconductor elements and the second conductor layer. Each semiconductor element includes first and second main electrodes respectively formed on first and second main surfaces thereof, and a control electrode that is formed on the second main surface. The first main electrode is electrically connected to the first conductor layer. The second main electrode is electrically connected to the second conductor layer via the respective conductor block. The circuit board includes a first wiring layer electrically connected to the control electrodes of the semiconductor elements.

Semiconductor device

A capacitor includes a case including a capacitor element, a first connection terminal, a second connection terminal, and a second insulating sheet formed between the first connection terminal and the second connection terminal, and the first connection terminal, the second insulating sheet, and the second connection terminal extend to the outside from the case. A semiconductor module includes a multi-layer terminal portion in which a first power terminal, a first insulating sheet, and a second power terminal are sequentially stacked. The first power terminal includes a first bonding area electrically connected to the first connection terminal, and the second power terminal includes a second bonding area electrically connected to the second connection terminal. The first insulating sheet includes a terrace portion that extends in a direction from the second bonding area towards the first bonding area in a planar view.

SEMICONDUCTOR MODULE

A semiconductor module includes a plurality of semiconductor chips that include gate electrodes on front surfaces, a gate terminal that receives a control signal from outside, and a print substrate. The print substrate includes a gate wiring layer that separates the control signal that is input into the gate terminal and passes the control signal to the gate electrodes of the semiconductor chips, and a cross-sectional area of the gate wiring layer becomes larger as the gate wiring layer gets closer to the gate terminal from the gate electrodes. 1. A semiconductor module comprising:a plurality of semiconductor chips including gate electrodes on front surfaces;a gate terminal configured to receive a control signal from outside; anda print substrate including a gate wiring layer for causing the control signal received by the gate terminal to separate and pass to the gate electrodes of the plurality of semiconductor chips, wherein a cross-sectional area of the gate wiring layer becomes larger as the cross-sectional area gets closer to the gate terminal from the gate electrodes.2. The semiconductor module according to claim 1 , further comprising:a drain plate made of conductive material; anda stacked substrate including an insulation plate and a circuit plate stacked one on another,wherein the plurality of semiconductor chips further include source electrodes on the front surfaces and drain electrodes on back surfaces,the plurality of semiconductor chips and the stacked substrate are located on a front surface of the drain plate,the drain plate is electrically connected to the drain electrodes, andthe gate wiring layer is electrically connected to the gate terminal via the circuit plate.3. The semiconductor module according to claim 2 , whereinthe gate terminal is located on the circuit plate.4. The semiconductor module according to claim 1 , whereinthe cross-sectional area of the gate wiring layer becomes larger, each time the gate wiring layer branches, as the gate ...

SEMICONDUCTOR MODULE

A semiconductor module includes sealing resin from which a main terminal protrudes, which seals an insulating substrate. The module includes a semiconductor element and a wiring substrate. The sealing resin has a nut housing portion in which a nut is disposed. The semiconductor module also has a busbar terminal to which a main terminal that protrudes from the sealing resin is electrically connected and which has an insertion hole facing the nut. 1. A semiconductor module comprising:an insulating substrate with an insulating board and a metal plate formed on a front surface of the insulating board;a semiconductor element having a rear surface fixed to the metal plate and having a main electrode on a front surface thereof;a wiring substrate that is electrically connected to the main electrode of the semiconductor element;a main terminal that is electrically connected via the wiring substrate to the main electrode;a sealing member from which the main terminal protrudes, which seals the insulating substrate, the semiconductor element, and the wiring substrate, and has an opening hole in a periphery of the main terminal;a nut disposed in the opening hole; anda connecting terminal to which the main terminal is electrically connected and which has an insertion hole facing the nut.2. The semiconductor module according to claim 1 ,wherein the sealing member has a protruding portion at a position corresponding to the opening hole, andthe connecting terminal is supported by the protruding portion.3. The semiconductor module according to claim 1 ,wherein the nut and the insertion hole are aligned.4. The semiconductor module according to claim 1 ,wherein a stepped portion is formed in the connecting terminal at a part connected to the main terminal.5. The semiconductor module according to claim 1 ,wherein a height of a part of the connection terminal where the insertion hole is formed corresponds to a height of the nut.6. A semiconductor module comprising:an insulating substrate ...

Semiconductor module and semiconductor module manufacturing method

A semiconductor module includes a laminated substrate having an insulating plate, a circuit pattern on an upper surface of the insulating plate and a heat dissipating plate on a lower surface of the insulating plate. The module further includes a semiconductor device having upper and lower surfaces, and including a collector electrode on the device upper surface, an emitter electrode and a gate electrode on the device lower surface, and the emitter electrode and the gate electrode each being bonded to an upper surface of the circuit pattern via a bump, and a block electrode bonded to the collector electrode. The block electrode includes a flat plate portion covering over the semiconductor device, and a pair of projecting portions projecting toward the circuit pattern from both ends of the flat plate portion in a thickness direction orthogonal to a surface of the insulating plate, and being bonded to the circuit pattern.

SEMICONDUCTOR MODULE AND SEMICONDUCTOR MODULE MANUFACTURING METHOD

A semiconductor module includes a laminated substrate having an insulating plate, a circuit pattern arranged on an upper surface of the insulating plate and a heat dissipating plate arranged on a lower surface of the insulating plate. The semiconductor module also includes a semiconductor device having a collector electrode arranged on its upper surface, having an emitter electrode and a gate electrode arranged on its lower surface, and bumps respectively bonding the emitter electrode and the gate electrode to an upper surface of the circuit pattern. Each of the bumps is made of a metal sintered material such that the bump is formed to be constricted in its middle portion in a thickness direction orthogonal to a surface of the insulating plate. 1. A semiconductor module , comprising:a laminated substrate including an insulating plate, a circuit pattern arranged on an upper surface of the insulating plate, and a heat dissipating plate arranged on a lower surface of the insulating plate opposite to the upper surface of the insulating plate; anda semiconductor device having an upper surface and a lower surface opposite to the upper surface and facing the circuit pattern, the semiconductor device including a collector electrode arranged on the upper surface thereof, and an emitter electrode and a gate electrode arranged on the lower surface thereof; andbumps respectively bonding the emitter electrode and the gate electrode to an upper surface of the circuit pattern, whereineach of the bumps is made of a metal sintered material and is constricted in a middle portion thereof in a thickness direction orthogonal to a surface of the insulating plate.2. The semiconductor module according to claim 1 , wherein said each of the bumps includes:a first bonding portion having a first bonding surface and a first side surface surrounding the first bonding surface, the semiconductor device being bonded to the first bonding surface;a second bonding portion having a second bonding ...

SEMICONDUCTOR DEVICE

A semiconductor device includes an insulating substrate having a first conductive pattern on a first insulating substrate; a first semiconductor element having one surface fixed to the first conductive pattern; a printed circuit board having a conductive layer on a second insulating substrate and a plurality of metal pins fixed to the conductive layer; and a third insulating substrate. A portion of pins constituting the metal pins is fixed to other surface of the first semiconductor element, and the printed circuit board with the metal pins is sandwiched between the insulating substrate having the first conductive pattern and the third insulating substrate. 1. A semiconductor device , comprising:an insulating substrate having a first conductive pattern on a first insulating substrate;a first semiconductor element having one surface fixed to the first conductive pattern;a printed circuit board having a conductive layer on a second insulating substrate and a plurality of metal pins fixed to the conductive layer; anda third insulating substrate;wherein a portion of pins constituting the metal pins is fixed to other surface of the first semiconductor element, andthe printed circuit board with the metal pins is sandwiched between the insulating substrate having the first conductive pattern and the third insulating substrate.2. The semiconductor device according to claim 1 , further comprising a third conductive pattern on the third insulating substrate.3. The semiconductor device according to claim 2 , wherein other pins constituting the metal pins electrically connect between the conductive layer of the printed circuit board with the metal pins and the third conductive pattern.4. The semiconductor device according to claim 2 , further comprising a second semiconductor element fixed to the third conductive pattern.5. The semiconductor device according to claim 1 , wherein the insulating substrate having the first conductive pattern claim 1 , the third insulating ...

POWER SEMICONDUCTOR MODULE AND COMPOSITE MODULE

A power semiconductor module includes a wiring member that electrically connects a front surface electrode of a semiconductor element and a circuit board of an insulating substrate in a housing. A resin provided in the housing covers the wiring member, and has a height in the vicinity of the wiring member. A cover covering the periphery of external terminals is provided between the resin and a first lid in the housing. A second lid is provided further outside the first lid in an aperture portion of the housing, and the space between the second lid and the first lid is filled with another resin. 1. A power semiconductor module , comprising:a housing having an aperture portion;a circuit board housed in an interior of the housing;a semiconductor element having an electrode on a front surface, a back surface being fixed to the circuit board;a wiring member electrically connecting the electrode of the semiconductor element and the circuit board;a first lid fixed in the aperture portion of the housing;a second lid fixed in the aperture portion of the housing and provided further outside the first lid;a first resin disposed between the first lid and the second lid;a second resin covering the wiring member and having an exposed surface, the exposed surface being located closer to the wiring member than the first lid;an external terminal having one end electrically and mechanically connected to the circuit board, and another end protruding further outside the second lid; anda cover covering the external terminal, and disposed between the exposed surface of the second resin and the first lid.2. The power semiconductor module according to claim 1 , wherein the external terminal is sealed with the first resin between the first lid and the second lid.3. The power semiconductor module according to claim 1 , wherein the wiring member includesa conductive plate provided to face the semiconductor element and the circuit board, anda conductive post having one end electrically and ...

Semiconductor module

A semiconductor module includes a first semiconductor element and a second semiconductor element each having an upper-surface electrode and a lower-surface electrode, and being connected in parallel to configure an upper arm, a first conductive layer having a U-shape in planar view, having two end portions, and having an upper surface on which the first semiconductor element and the second semiconductor element are disposed in a mirror image arrangement, a positive electrode terminal having a body part and at least two positive electrode ends branched from the body part, and a negative electrode terminal having a negative electrode end disposed between the positive electrode ends. The positive electrode ends are respectively connected to one of the two end portions of the first conductive layer.

Semiconductor module

A semiconductor module includes first to fourth semiconductor elements, each having an upper-surface electrode and a lower-surface electrode, first to fourth conductive layers, each extending in a first direction and being independently disposed side by side in a second direction orthogonal to the first direction, and an output terminal connected to the second and third conductive layers. The lower-surface electrodes of each of the first to fourth semiconductor elements are respectively conductively connected to the first to fourth conductive layers. The third conductive layer and the fourth conductive layer are disposed between the first conductive layer and the second conductive layer and are connected to the output terminal to have an equal potential.

Semiconductor module

A semiconductor module includes a case with a side wall in a first direction in which gate and source terminals are embodied and exposed therefrom, first and second semiconductor elements each having gate and source electrodes, gate and source relay layers positioned at a center between the first and second semiconductor elements in the first direction at a side of the semiconductor elements farther from the side wall, first gate and source wires respectively connecting the gate and source terminals to the gate and source relay layers, second gate and source wires, and third gate and source wires, respectively connecting the gate and source electrodes of the first semiconductor element, and the gate and source electrode of the second semiconductor element, to the gate and source relay layers. The first to third source wires are respectively located closer to the first to third gate wires than any other gate wires.

SEMICONDUCTOR MODULE

A semiconductor module includes an insulating substrate having a main wiring layer, positive and negative electrode terminals adjacently arranged in a first direction, a plurality of semiconductor elements forming a first column and another plurality of semiconductor elements forming a second column, each semiconductor element having gate and source electrode on an upper surface thereof, and being disposed on the main wiring layer such that corresponding ones of the gate electrodes in the first and second columns face each other in a second direction orthogonal to the first direction, a control wiring substrate between the first and second columns and having gate and source wiring layers, a gate wiring member connecting ones of the gate electrodes in the first and second columns through the gate wiring layer, and a source wiring member connecting ones of the source electrodes in the first and second columns through the source wiring layer. 1. A semiconductor module , comprising:an insulating substrate having an upper surface, and having a main wiring layer though which a main current of the semiconductor module flows, the main wiring layer being formed on the upper surface of the insulating substrate;a first external terminal and a second external terminal adjacently arranged along a line extending in a first direction;a plurality of semiconductor elements forming a first column and a plurality of semiconductor elements forming a second column, the first and second columns each extending in the first direction, the plurality of semiconductor elements in the first column being electrically connected in parallel to the other plurality of semiconductor elements in the second column, each semiconductor element in the first and second columns having an upper surface, and having a gate electrode and a source electrode on the upper surface thereof, and being disposed on the main wiring layer such that the gate electrodes of the semiconductor elements in the first column ...

POWER SEMICONDUCTOR MODULE

A power semiconductor module is equipped with: a metal base; semiconductor chips electrically connected with and fixed to the metal base; and an insulating substrate fixed to the metal base and having a circuit plate on one surface. Additionally, the power semiconductor module is further equipped with a circuit board that is provided so as to face the semiconductor chips and the insulating substrate and that electrically connects electrodes of the semiconductor chips and the circuit plate of the insulating substrate. Further, the power semiconductor module is equipped with a conductive post that is electrically connected to at least one of either the electrodes of the semiconductor chips or the circuit plate of the insulating substrate while being electrically connected to the metal film of the circuit board. 1. A power semiconductor module , comprising:a metal base;a semiconductor element having a first electrode and a second electrode on principal surfaces thereof, said first electrode being electrically connected and fixed to said metal base;a multilayer substrate formed by stacking together a circuit plate, an insulating plate, and a metal plate, said metal plate being fixed to said metal base;a circuit board that is provided so as to face said semiconductor element and said multilayer substrate and that has a metal film electrically connecting the second electrode of said semiconductor element to the circuit plate of said multilayer substrate; anda conductive post electrically connected and fixed to the second electrode of said semiconductor element at one end and electrically connected and fixed to the metal film of said circuit board at another end.2. A power semiconductor module , comprising:a metal base;a semiconductor element provided with a first electrode and a second electrode on principal surfaces thereof, said first electrode being electrically connected and fixed to said metal base;an multilayer substrate formed by stacking together a circuit plate, ...

SEMICONDUCTOR MODULE AND SEMICONDUCTOR DEVICE

A semiconductor module includes a semiconductor element having a gate electrode and source electrode on the front surface, and a drain electrode on the rear surface, the drain electrode being electrically connected to the front surface of a drain plate; a laminated substrate having, on the front surface of an insulating plate, a first circuit plate to which the gate electrode is electrically connected, and a second circuit plate to which the source electrode is electrically connected, and which is disposed on the front surface of the drain plate; a gate terminal disposed on the first circuit plate; a source terminal disposed on the second circuit plate; and a cover disposed opposite to the front surface of the drain plate, and having an opening in which the gate terminal and the source terminal are positioned and a guide groove contacting the opening and extending to the outer peripheral portion. 1. A semiconductor module , comprising:a drain plate;a semiconductor element having a gate electrode and source electrode on a front surface, and a drain electrode on a rear surface, and disposed on the front surface of the drain plate, the drain electrode being electrically connected to the drain plate;a laminated substrate having an insulating plate, and a first circuit plate and a second circuit plate provided on a front surface of the insulating plate, and disposed on the front surface of the drain plate, the first circuit plate being electrically connected to the gate electrode, and the second circuit plate being electrically connected to the source electrode;a gate terminal disposed on the first circuit plate;a source terminal disposed on the second circuit plate; anda cover having an opening and a guide groove, and disposed to face the front surface of the drain plate, the gate terminal and the source terminal being positioned in the opening, the guide groove contacting the opening and extending to an outer peripheral portion.2. The semiconductor module according to ...

SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND INTERFACE UNIT

A semiconductor device includes a base plate, a plurality of semiconductor units provided in parallel on the base plate, the plurality of semiconductor units implementing a pair, each semiconductor unit including a semiconductor chip and a rod-shaped unit-side control terminal, the unit-side control terminal being connected to the semiconductor chip, the unit-side control terminal extending opposite to the base plate; and an interface unit including a box-shaped accommodating portion, the accommodating portion being provided on the plurality of semiconductor units, the accommodating portion including an internal wiring and a rod-shaped external-connecting control terminal, the internal wiring being connected to each of the plurality of the unit-side control terminals extending from the plurality of semiconductor units, the external-connecting control terminal extending to the outside opposite to the semiconductor units, the external-connecting control terminal being connected to the internal wiring. 1. A semiconductor device comprising:a base plate;a plurality of semiconductor units provided in parallel on the base plate, the plurality of semiconductor units implementing a pair, each semiconductor unit including a semiconductor chip and a rod-shaped unit-side control terminal, the unit-side control terminal being connected to the semiconductor chip, the unit-side control terminal extending opposite to the base plate; andan interface unit including a box-shaped accommodating portion, the accommodating portion being provided on the plurality of semiconductor units, the accommodating portion including an internal wiring and a rod-shaped external-connecting control terminal, the internal wiring being connected to each of the plurality of the unit-side control terminals extending from the plurality of semiconductor units, the external-connecting control terminal extending to the outside opposite to the semiconductor units, the external-connecting control terminal being ...

Semiconductor device

A semiconductor device encompasses a cooler made of ceramics, having a first main face and a second main face, being parallel and opposite to the first main face, defined by two opposite side faces perpendicular to the first and second main faces, a plurality of conductive-pattern layers delineated on the first main face, a semiconductor chip mounted on the first main face via one of the plurality of conductive-pattern layers, and a seal member configured to seal the semiconductor chip.

Semiconductor device and method for manufacturing the semiconductor device

A semiconductor device is disclosed in which an implant board and a semiconductor element of a semiconductor mounting board are bonded and electrically connected through implant pins and which can be manufactured with high productivity. Implant pins are bonded to a semiconductor element and/or a circuit pattern of a semiconductor mounting board through cylindrical terminals press-fitted into the other ends of the implant pins. Press-fitting depth L 2 of each of the implant pins into corresponding cylindrical terminals is adjustable, so that total length of the implant pin and cylindrical terminal which are press-fitted to each other matches up with the distance between the semiconductor element and/or the circuit pattern on the semiconductor mounting board and an implant board.

POWER SEMICONDUCTOR MODULE

A power semiconductor module is equipped with: a frame made of an insulator; a first electrode plate made of a metal and fixed to a bottom opening of the frame; semiconductor chips electrically and physically connected to the first electrode plate; a multilayer substrate fixed to a principal surface of the first electrode plate; wiring members that electrically connect front surface electrodes of the semiconductor chips and a circuit plate of the multilayer substrate; a second electrode plate fixed to a top opening of the frame; and a metal block that has a first surface having a projected portion and a second surface disposed on a side opposite to the first surface and that is tapered from the first surface to the second surface, the projected portion being electrically and physically connected to the circuit plate of the multilayer substrate and the second surface being electrically and physically connected to the second electrode plate. 1. A power semiconductor module , comprising:a frame made of an insulator and having a bottom opening and a top opening;a first electrode plate made of a metal and fixed in the bottom opening in said frame;a semiconductor element having a front surface electrode and a reverse surface electrode, said reverse surface electrode being electrically and physically connected to a principal surface of said first electrode plate;a multilayer substrate comprising a circuit plate, an insulating plate, and a metal plate stacked together, said metal plate being fixed to the principal surface of said first electrode plate;a wiring member that electrically connects the front surface electrode of said semiconductor element to the circuit plate of said multilayer substrate;a second electrode plate made of a metal and fixed in the top opening in said frame; anda metal block that has a first surface having a protrusion and a second surface opposite thereto and that tapers from said first surface to said second surface, said protrusion being ...

COOLER

A cooler of the present invention is provided with a case having a top plate, a bottom plate, and a side plate, cooling fins disposed inside the case, and a flow path for cooling fluid that comes into contact with the cooling fins and that flows through the interior of the case, the cooler cooling an object to be cooled in contact with the top plate or the bottom plate. The cooling fins have a shaft part and vane parts that protrude outward from the shaft part and extend spirally in the axial direction; the overall cooling fin configuration constituting a quadrangular column shape. The cooling fins are disposed in contact with at least the top plate and the bottom plate, and the flow path has a spiral-formed configuration formed by the vane parts, the top plate, and the bottom plate. 1. A cooler provided with a case having a top plate , a bottom plate , and a side plate , cooling fins disposed inside said case , and a flow path for cooling fluid that comes into contact with said cooling fins and that flows through the interior of the case , the cooler being for cooling an object to be cooled in contact with the top plate or the bottom plate , the cooler comprising:the cooling fins have a shaft part and vane parts that protrude outward from the shaft part and extend in the axial direction so as to form a spiral configuration, the overall cooling fin configuration constituting a quadrangular column shape and being disposed in contact with at least the top plate and the bottom plate; andthe flow path has a spiral-formed configuration formed by the vane parts, the top plate, and the bottom plate.2. The cooler according to claim 1 , wherein four to ten of the vane parts are arranged at equidistant intervals around the shaft part.3. The cooler according to claim 1 , wherein the axial pitch of the vane parts has a length amounting to 1.5 to 6.25 times the height of the quadrangular column.4. The cooler according to claim 1 , wherein the cross-sectional area of the shaft ...

POWER SEMICONDUCTOR MODULE

A power semiconductor module includes a cooler; a plurality of power semiconductor units fixed on the cooler; and a bus bar unit connected electrically to the plurality of power semiconductor units. Each of the plurality of power semiconductor units includes a multilayered substrate including a circuit plate, an insulating plate, and a metal plate laminated in respective order; a semiconductor element fixed to the circuit plate; a wiring member having a printed circuit board and a plurality of conductive posts; external terminals connected electrically and mechanically to the circuit plate; and an insulating sealing material. The bus bar unit includes a plurality of bus bars mutually connecting the external terminals of the plurality of power semiconductor units. 1. A power semiconductor module comprising:a cooler;a plurality of power semiconductor units fixed side by side on the cooler; anda bus bar unit electrically connecting the plurality of power semiconductor units, a multilayered substrate having a circuit plate, an insulating plate, and a metal plate laminated in respective sequence,', 'a semiconductor element having a front face including an electrode, and a rear face fixed to the circuit plate,', 'a wiring member having a printed circuit board and a plurality of conductive posts, wherein the printed circuit board is disposed facing the front face of the semiconductor element and the circuit plate, one end of each of the plurality of conductive posts is connected electrically and mechanically to the printed circuit board, and another end of each of the plurality of conductive posts is connected electrically and mechanically to the electrode of the semiconductor element or to the circuit plate,', 'external terminals connected electrically and mechanically to the circuit plate, and', 'an insulating sealing material sealing the multilayered substrate, the semiconductor element, the wiring member, and the external terminals; and, 'wherein each of the plurality ...

Semiconductor device

In a semiconductor device, an insulated substrate is bonded with a cooling body with lowered thermal resistance without a holding unit. The semiconductor device includes an insulated substrate where a wiring pattern copper plate unit for forming a plurality of wiring patterns is disposed on one side of an insulating plate unit, and a heat radiation copper plate unit disposed on the other side of the insulating plate unit; a semiconductor chip mounted on the wiring pattern copper plate unit; a cooling body contacted with the heat radiation copper plate unit; and a wiring conductor plate connected between the semiconductor chip and the wiring pattern copper plate unit. The heat radiation copper plate unit and the cooling body are bonded with a metal sintered material, and thicknesses of the wiring pattern copper plate unit and the heat radiation copper plate unit are set to such thermal stress is relaxed.

COOLER AND SEMICONDUCTOR MODULE

Provided is a cooler having high cooling efficiency and low pressure loss of fluid. A cooler includes: a flow-channel part at least including a plate-like fin (top plate) and a plate-like fin (bottom plate); and a continuous groove-like flow channel defined between the top plate and the bottom plate to flow fluid, the cooler being configured to cool semiconductor elements. When the flow-channel part is viewed from the direction parallel to the top plate and intersecting the flow channel, the flow channel has a corrugated shape so that a face of the flow channel closer to the top plate and a face of the flow channel closer to the bottom plate bend in a synchronized manner toward the top plate and the bottom plate. 1. A cooler comprising: a flow-channel part at least including a top plate and a bottom plate; and a continuous groove-like flow channel defined between the top plate and the bottom plate to flow fluid , the cooler being configured to cool a semiconductor element , whereinwhen the flow-channel is viewed from a direction parallel to the top plate and intersecting the flow channel, the flow channel has a corrugated shape so that a face of the flow channel closer to the top plate and a face of the flow channel closer to the bottom plate bend in a. synchronized manner toward the top plate and the bottom plate.3. The cooler according to claim 1 , wherein the flow-channel part includes at least one plate-like fin disposed between the top plate and the bottom plate claim 1 , a plurality of flow channels being partitioned by plate-like fin and being defined between the top plate and the bottom plate claim 1 , andwhen the flow-channels are viewed from the direction parallel to the top plate and intersecting the flow channels, the plurality of flow channels each has a corrugated shape so that a face of the flow channel closer to the top plate and a face of the flow channel closer to the bottom plate bend in a synchronized manner toward the top plate and the bottom ...

Manufacturing method of semiconductor device

【課題】半導体チップと他の構成部材との半田接合層、あるいは他の構成部材同士の半田接合層において、その厚さを所望の厚さで、かつ傾きのない均一の厚さにすること。半田接合層中に好ましくない合金層が成長するのを長期にわたって抑制すること。 【解決手段】半導体チップ１、リードフレーム２１、絶縁基板３およびヒートシンク６のそれぞれの半田接合面にＮｉ膜を成膜する。ヒートシンク６にクリーム半田を印刷し、その上にＣｕを含むフィラー３１を置く。その上にクリーム半田を印刷した絶縁基板３をのせ、その上にフィラー３１を置く。同様にして半導体チップ１およびリードフレーム２１をのせる。クリーム半田が溶け、フィラー３１が溶けた半田層に落ち込み、固まると、所望の厚さで均一な厚さの半田接合層５，２，２２，２３が得られる。接合界面では、Ｃｕ−Ｎｉ−Ｓｎ合金が形成され、硬く脆い合金層が成長するのが抑制される。 【選択図】 図１

Semiconductor device, and manufacturing method of semiconductor device

【課題】半導体装置の信頼性を向上させる。 【解決手段】半導体装置１では、絶縁板１０ａの第１の主面に金属箔１０ｂが形成され、絶縁板１０ａの第２の主面に、少なくとも一つの別の金属箔１０ｃ，１０ｄが形成される。また、別の金属箔１０ｃ，１０ｄ上に接合された少なくとも一つの半導体素子２０と、半導体素子２０が配置された絶縁板１０ａの主面に対向するようにプリント基板３０が配置される。そして、プリント基板３０の第１の主面に形成された金属箔３０ｂまたはプリント基板３０の第２の主面に形成された別の金属箔３０ｃと、半導体素子２０の主電極とが複数のポスト電極３０ｅにより電気的に接続される。これにより、高信頼性で、優れた動作特性を有し、且つ高い生産性を有する半導体装置１が実現する。 【選択図】図１

Power semiconductor module and method for its production

Es soll ein Leistungshalbleitermodul bereitgestellt werden, in dem ein Abdichtmaterial verwendet wird, das der Temperatur der Umgebung eines Siliziumkarbidelements des Leistungshalbleitermoduls und der Temperatur eines äußeren Umfangs des Leistungshalbleitermoduls standhält. Das Leistungshalbleitermodul weist Folgendes auf: eine Isolierschicht; ein Kupferbasissubstrat mit einem ersten Kupferblock und einem zweiten Kupferblock, von denen jeder auf einer der beiden Seiten der Isolierschicht fixiert ist; mehrere Leistungshalbleiterelemente, von denen jedes mit einer Seite durch eine leitende Bondschicht auf dem ersten Kupferblock fixiert ist und Siliziumkarbid verwendet; mehrere Implantierungspins, die durch eine leitende Bondschicht auf der anderen Seite jedes der mehreren Leistungshalbleiterelemente fixiert sind; eine Leiterplatte, die an den Implantierungspins fixiert ist und so angeordnet ist, dass sie den Leistungshalbleiterelementen zugewandt ist; ein erstes Abdichtmaterial, das keinen Flammhemmer enthält und mindestens zwischen den Leistungshalbleiterelementen und der Leiterplatte angeordnet ist; und ein zweites Abdichtmaterial, das einen Flammhemmer enthält und so angeordnet ist, dass es das erste Abdichtmaterial bedeckt. A power semiconductor module is to be provided in which a sealing material is used which withstands the temperature of the surroundings of a silicon carbide element of the power semiconductor module and the temperature of an outer periphery of the power semiconductor module. The power semiconductor module includes: an insulating layer; a copper base substrate having a first copper block and a second copper block each of which is fixed on either side of the insulating layer; a plurality of power semiconductor elements, each of which is fixed with one side by a conductive bonding layer on the first copper block and using silicon carbide; a plurality of implant pins fixed by a conductive bonding layer on the other side of each of the plurality of ...

Semiconductor device and manufacturing method thereof

(57)【要約】 【課題】放熱効率を向上させたパッケージ構造とする。 【解決手段】絶縁金属基板３と半導体チップ１を半田５ で固着し、半導体チップ１上のエミッタ電極のボンディ ングパッドであるエミッタ電極パッド１５と、導板２と をクリーム半田４で固着する。この導板２をクリーム半 田４でエミッタ電極パッドとを固着することで放熱効率 を向上させる。

Semiconductor device

【課題】配線長及び電流経路を短くすることができ、インダクタンスを低減することができる半導体装置を提供する。【解決手段】第１導電層１２ａ及び第２導電層１２ｂを上面側に有する絶縁回路基板１と、第１導電層１２ａ上に搭載された第１半導体チップ３ａ，３ｂと、第２導電層１２ｂ上に搭載された第２半導体チップ３ｃ，３ｄと、第１半導体チップ３ａ，３ｂと対向して配置された第１下側配線層６３ａ、及び第２半導体チップ３ｃ，３ｄと対向して配置された第２下側配線層６３ｂを有し、絶縁回路基板１側に湾曲した湾曲部６０を有するプリント基板６と、第１半導体チップ３ａ，３ｂと第１下側配線層６３ａとを接続する第１接続部材２１ａ，２１ｂと、第２半導体チップ３ｃ，３ｄと第２下側配線層６３ｂとを接続する第２接続部材２１ｃ，２１ｄと、第１導電層１２ａと湾曲部６０における第２下側配線層６３ｂとを接続する第３接続部材２１とを備える。【選択図】図１

Semiconductor device

(57)【要約】 【課題】薄膜化した半導体チップの反り量を小さくし て、絶縁基板に半導体チップをボイドなしに半田接合し た半導体装置を提供する。 【解決手段】ゲート配線４で分割されるエミッタ電極２ の分割領域９を垂直投影したコレクタ電極１０側の分割 領域１１の図示しないＮｉ膜を部分的に除去することで バイメタル効果を抑制して、ＩＧＢＴチップ１の反り量 を低減する。

Semiconductor device

Um die Durchschlagspannung einer Halbleitervorrichtung anzuheben, werden bevorzugt die Kriechstrecke und der Spielraum zwischen einer externen Klemme und einem anderen metallischen Abschnitt vergrößert. Es wird eine Halbleitervorrichtung bereitgestellt, wobei die Halbleitervorrichtung Folgendes umfasst: ein Halbleiterelement; einen Gehäuseabschnitt, der das Halbleiterelement aufnimmt; und eine externe Klemme, die auf einer Vorderfläche des Gehäuseabschnitts bereitgestellt wird, wobei auf der Vorderfläche des Gehäuseabschnitts Folgendes gebildet ist: ein Wandabschnitt, der von der Vorderfläche vorsteht; und ein Hohlabschnitt, der in einer Region bereitgestellt wird, die von dem Wandabschnitt umgeben ist und mit Bezug auf die Vorderfläche vertieft ist, und die externe Klemme auf einer Bodenfläche des Hohlabschnitts angeordnet ist. In order to increase the breakdown voltage of a semiconductor device, it is preferable to increase the creepage distance and the clearance between an external terminal and another metallic portion. There is provided a semiconductor device, the semiconductor device comprising: a semiconductor element; a housing portion receiving the semiconductor element; and an external terminal provided on a front surface of the housing portion, wherein formed on the front surface of the housing portion are: a wall portion protruding from the front surface; and a hollow portion provided in a region surrounded by the wall portion and recessed with respect to the front surface, and the external clamp is disposed on a bottom surface of the hollow portion.

Heat exchanger

【課題】金属製の本体部に接合される樹脂製のヘッダーに亀裂等の損傷が生じにくい熱交換器を提供する。【解決手段】冷却装置１は、熱媒体の流通路が内部を貫通する本体部２と、流入口が設けられ第１端部を覆う樹脂製の第１ヘッダー３と、流出口が設けられ第２端部を覆う樹脂製の第２ヘッダー４を備える。本体部２は、表面と、裏面と、第１側面と、第２側面と、を有する。本体部２と第１ヘッダー３とは、第１接合面と、第２接合面と、第３接合面と、第４接合面とで接合される。第３接合面は、＋Ｙ側に突出する曲面である。第４接合面は、－Ｙ側に突出する曲面である。【選択図】図１

Semiconductor chip and semiconductor device using the same

【課題】接続導体との間のはんだ接合部の信頼性を確保する。 【解決手段】ジンケート法による無電解めっき法を用いて、半導体チップ１の表面側のＡｌ電極３の上にＮｉめっき層５が形成される。Ａｌ電極３の上には、選択的にＮｉめっき層５が析出されるため、周辺耐圧構造４部分には、Ｎｉめっき層５は形成されない。また、形成されるＮｉめっき層５は、所定の厚さに均一に形成することができる。続いて、Ｎｉめっき層５の上にＡｕめっき層６が形成される。無電解めっき法を用いることによって、Ａｕめっき層６もＮｉめっき層５と同様に、Ｎｉめっき層５の上に選択的、かつ均一に形成される。 【選択図】 図１

METHOD FOR PRODUCING DIESTERS OF DICARBONIC ACIDS.

半導体装置

【課題】温度変化が生じた際の信頼性向上及び絶縁不良低減が可能となる半導体装置を提供する。【解決手段】絶縁回路基板１、半導体チップ３ａ，３ｂ、プリント基板６、インターポーザ５ａ，５ｂ及び封止部材９を備え、インターポーザ５ａ，５ｂが、半導体チップ３ａ，３ｂにはんだ層８ａ，８ｂを介して一端が接合された複数のポスト電極５１ａ～５１ｃ，５１ｊと、半導体チップ３ａ，３ｂに対向して半導体チップ３ａ，３ｂから離間して設けられ、はんだ層８ａ，８ｂの一部が充填された第１貫通穴５６ａ，５６ｂを有する絶縁層５３ａと、プリント基板６に対向して設けられ、絶縁層５３ａを介して複数のポスト電極５１ａ～５１ｃ，５１ｊの他端に接続された導体層５４ａ，５４ｂを備える。【選択図】図１

半導体装置及び半導体装置の製造方法

【課題】半導体装置の導体層を介した接続に伴う品質の低下を抑える。【解決手段】半導体モジュール１は、導体層２１と、導体層２１上の絶縁板２２と、絶縁板２２上の回路パターン層２３と、回路パターン層２３上の半導体チップ７０とを備える。導体層２１は、第１貫通孔２１ａを有する。絶縁板２２は、第１貫通孔２１ａと対向する箇所にそれよりも大きい開口サイズの第２貫通孔２２ａを有する。回路パターン層２３は、第２貫通孔２２ａと対向する箇所にそれよりも大きい開口サイズの開口部２３ａを有する。冷却体９０との接続時には、導体層２１と冷却体９０との間に熱伝達媒体１００が設けられ、開口部２３ａ、第２貫通孔２２ａ及び第１貫通孔２１ａに挿通されてネジ取付孔９１に螺合されるネジ部材１２０Ａにより、第２貫通孔２２ａ内の、導体層２１の第１貫通孔２１ａの周囲が冷却体９０側に押圧される。【選択図】図６

Elastic paving material

Semiconductor device and method of manufacturing the same

A semiconductor device includes: an insulated circuit substrate; a power semiconductor element mounted on the insulated circuit substrate; a first terminal having a plate-like shape having a first main surface and electrically connected to the power semiconductor element; a second terminal having a second main surface opposed to the first main surface of the first terminal and electrically connected to the power semiconductor element; an insulating sheet interposed between the first main surface and the second main surface; and a conductive film provided on at least one of the first main surface side and the second main surface side of the insulating sheet.

Semiconductor device

A semiconductor device includes an insulated circuit substrate, a semiconductor chip, a printed circuit board, an interposer, and a sealing member, the interposer including a plurality of post electrodes each having one end bonded to the semiconductor chip via a solder layer, an insulating layer provided to be separately opposed to the semiconductor chip and provided with a first penetration hole filled with part of the solder layer, and a conductor layer provided to be opposed to the printed circuit board and connected to another end of each of the post electrodes via the insulating layer.

半導体装置の製造方法及び半導体装置

【課題】半導体ユニット内の内部接合材の溶融を防止しつつ、半導体ユニットと放熱部とを適切に接合して信頼性の低下を防止する。【解決手段】半導体ユニット２の裏面と放熱板３ａとを、錫−ビスマス合金粒子と金属粒子（銀粒子）とを含む第２接合材を介して接合して、加熱する。これにより、半導体ユニット２と放熱板３ａとが第２接合材が液相焼結した第２接合層４により接合されて、半導体装置１が製造される。第２接合材は、錫−ビスマス合金粒子と銀粒子とを含んでいるために、半導体ユニット２と放熱板３ａとの接合温度を２００℃以下とすることができる。このため、半導体ユニット２内の第１接合層２２ａ，２２ｂ，２４ａ，２４ｂが溶融せずに、半導体ユニット２と放熱板３ａとを接合することができる。【選択図】図１

半導体装置及び半導体装置の製造方法

【課題】半導体装置の信頼性を向上させる。 【解決手段】半導体装置１では、絶縁板１０ａの第１の主面に金属箔１０ｂが形成され、絶縁板１０ａの第２の主面に、少なくとも一つの金属箔１０ｃ，１０ｄが形成される。また、金属箔１０ｃ，１０ｄ上に少なくとも一つの半導体素子２０が接合され、半導体素子２０が配置された絶縁板１０ａの主面に対向するようにプリント基板３０が配置される。そして、プリント基板３０に設けられたスルーホール３０ｄに注入され、固定された複数のポスト電極３０ｅにより、プリント基板３０の第１の主面に形成された金属箔３０ｂと、金属箔３０ｂに対応するようにプリント基板３０の第２の主面に形成された金属箔３０ｃと、半導体素子２０の主電極とが電気的に接続される。これにより、高信頼性で、優れた動作特性を有し、且つ高い生産性を有する半導体装置１が実現する。 【選択図】図１

半導体装置

【課題】通常動作時のみだけでなく、短絡時などでも安定してチップの温度上昇を抑えることができる半導体装置を提供すること。 【解決手段】トレンチ３とｐベース領域２とｎ + エミッタ領域７およびｐ + ベースコンタクト領域８を合わせて一つのユニットセル１３とし、チップ１５の中央部のユニットセル１３の間隔を狭くしてその密度を密とし、外周部のユニットセル１３の間隔を広くしてその密度を疎とすることで、外周部に流れる主電流を小さくして、発熱を小さくし、ヒートスプレッダ２０から外れた箇所２１の温度上昇を抑える。 【選択図】 図１

インターフェースユニット及び半導体装置

【課題】省スペースでセンサの搭載の有無を選択可能なインターフェースユニット及びこのインターフェースユニットを用いた半導体装置を提供する。【解決手段】インターフェースユニットは、対向する第１及び第２の立上部分３７ｄ１、３７ｄ２によって規定されるＵ字部分を中央に挟み、該Ｕ字部分に接続された両端が同一平面上を反対方向に延在するオーム型の断面形状をなし、両端の平面部分のそれぞれを、半導体ユニットに接続されるバスバー接続部とする板状のバスバーと、第１及び第２の立上部分を内部に樹脂で封止し、第１及び第２の立上部分に平行な２面をそれぞれ側面とした直方体部分を有し、該直方体部分の第１の立上部分に沿って樹脂中にセンサ用空洞部４０ｂを設け、バスバー接続部に近い側の直方体部分の一方の底面側に、溝部５０を設けた支持部３０ｂと、を備える。【選択図】図５

Semiconductor device

A semiconductor device includes: an insulated circuit substrate; a semiconductor chip provided on the insulated circuit substrate; a first external connection terminal provided on the insulated circuit substrate; a relay terminal provided on the insulated circuit substrate; a printed circuit board arranged over the semiconductor chip and connected to the first external connection terminal and the relay terminal; and a first snubber circuit provided on the printed circuit board and having one end connected to the first external connection terminal via the printed circuit board and another end connected to the relay terminal via the printed circuit board.

Halbleitermodul

Halbleitermodul (100), umfassend:ein Isoliersubstrat (103) mit einer Isolierplatte (101) und einer Metallplatte (102a), die auf einer vorderen Oberfläche der Isolierplatte gebildet ist;ein Halbleiterelement (104, 114), dessen hintere Oberfläche an der Metallplatte (102a) befestigt ist und eine Hauptelektrode auf seiner vorderen Oberfläche aufweist;ein Verdrahtungssubstrat (121), das mit der Hauptelektrode des Halbleiterelements (104, 114) elektrisch verbunden ist;eine Hauptklemme (125-127), die über das Verdrahtungssubstrat (121) mit der Hauptelektrode elektrisch verbunden ist;ein Vergusselement (130), aus dem die Hauptklemme (125-127) vorsteht und welches das Isoliersubstrat (103), das Halbleiterelement (104, 114) und das Verdrahtungssubstrat (121) vergießt und ein Öffnungsloch (131a-133a) in einer Peripherie der Hauptklemme (125-127) aufweist;eine Mutter (143), die in dem Öffnungsloch (131a-133a) angeordnet ist; undeine Sammelschienenklemme (140), mit der die Hauptklemme (125-127) elektrisch verbunden ist und die ein Einfügungsloch (142) aufweist, das der Mutter (143) zugewandt ist.

半導体装置

【課題】スナバ回路を搭載した半導体装置において、パワー半導体素子の発熱による信頼性の低減、及び長配線化に伴うスナバ効果の低減をそれぞれ抑制することができる半導体装置を提供する。 【解決手段】絶縁回路基板と、絶縁回路基板上に配置された半導体チップ３ａ～３ｄと、絶縁回路基板上に配置された第１外部接続端子２２と、絶縁回路基板上に配置された中継端子８１と、半導体チップ３ａ～３ｄの上方に配置され、第１外部接続端子２２及び中継端子８１に接続されたプリント基板６と、プリント基板６上に配置され、プリント基板６を介して第１外部接続端子２２に一端が接続され、プリント基板６を介して中継端子８１に他端が接続されたスナバ回路（８２ａ，８２ｂ，８３ａ，８３ｂ）とを備える。 【選択図】図７

Semiconductor device

A semiconductor device includes a semiconductor module that includes: an insulating circuit board, a semiconductor chip provided on a main surface of the insulating circuit board, and an external connection terminals provided on the main surface of the insulating circuit board; an external printed circuit board provided so as to face a main surface of the semiconductor module, the external printed circuit board having a through hole into which the external connection terminal is inserted; and an elastic member provided between the main surface of the semiconductor module and the external printed circuit board so as to apply a pressing force to the main surface of the semiconductor module.

Semiconductor device

A semiconductor device includes: an insulated circuit substrate including a conductive plate on a top surface side; a semiconductor chip mounted on the conductive plate; and an external connection terminal electrically connected to the semiconductor chip and including an inner-side conductor layer, an outer-side conductor layer provided at a circumference of the inner-side conductor layer, and an insulating layer interposed between the inner-side conductor layer and the outer-side conductor layer.

半導体装置及びその製造方法

【課題】信頼性が高く、スイッチング損失を低減することができる半導体装置を提供する。【解決手段】絶縁回路基板１と、絶縁回路基板１上に搭載されたパワー半導体素子と、パワー半導体素子に電気的に接続され、第１主面を有する平板状の第１端子８１と、パワー半導体素子に電気的に接続され、第１端子８１の第１主面と対向する第２主面を有する第２端子８２と、第１主面と前記第２主面の間に配置された絶縁シート８３と、絶縁シート８３の第１主面側及び第２主面側の少なくとも一方に配置された導電膜８４，８５とを備える。【選択図】図２

負荷駆動装置

【課題】パワーモジュールのパワー半導体素子の閾値電圧の変動に関する寿命を事前に知ることができる負荷駆動装置を提供する。【解決手段】Ｖｄｓ検出回路３３がパワー半導体素子４１のＶｄｓをモニタしながらＶｔｈ検出用信号発生回路３２が漸増するゲート電圧を発生してパワー半導体素子４１のゲートに印加する。検出したＶｄｓが基準データの値に達したときにＶｄｓ比較回路３４が出力するＶｄｓ変化検出信号Ｓ３によってＶｔｈ検出制御部２２が発生していたＶｔｈの値をデータ記憶部２３に記憶する。寿命予測計算部２４では、Ｖｔｈの値の変動の傾向を寿命予測式にフィッティングし、この寿命予測式を用いて予想される上限の閾値変動に至るまでの時間を予測する。【選択図】図１

Semiconductor device comprising a capacitor

A capacitor includes a case including a capacitor element, a first connection terminal, a second connection terminal, and a second insulating sheet formed between the first connection terminal and the second connection terminal, and the first connection terminal, the second insulating sheet, and the second connection terminal extend to the outside from the case. A semiconductor module includes a multi-layer terminal portion in which a first power terminal, a first insulating sheet, and a second power terminal are sequentially stacked. The first power terminal includes a first bonding area electrically connected to the first connection terminal, and the second power terminal includes a second bonding area electrically connected to the second connection terminal. The first insulating sheet includes a terrace portion that extends in a direction from the second bonding area towards the first bonding area in a planar view.

Semiconductor device comprising a capacitor

A capacitor includes a case including a capacitor element, a first connection terminal, a second connection terminal, and a second insulating sheet formed between the first connection terminal and the second connection terminal, and the first connection terminal, the second insulating sheet, and the second connection terminal extend to the outside from the case. A semiconductor module includes a multi-layer terminal portion in which a first power terminal, a first insulating sheet, and a second power terminal are sequentially stacked. The first power terminal includes a first bonding area electrically connected to the first connection terminal, and the second power terminal includes a second bonding area electrically connected to the second connection terminal. The first insulating sheet includes a terrace portion that extends in a direction from the second bonding area towards the first bonding area in a planar view.

半導体装置

【課題】半導体チップの上方に搭載されたプリント基板の放熱性を向上させることができ、小型化を図ることができる半導体装置を提供する。【解決手段】絶縁回路基板１と、絶縁回路基板１上に配置された半導体チップ３ａ，３ｂと、半導体チップ３ａ，３ｂの上方に配置され、第１炭素層６１と、第１炭素層６１の上面に配置された第１絶縁層６２ａと、第１絶縁層６２ａの上面に配置された第１配線層６３ａと、第１炭素層６１の下面に配置された第２絶縁層６２ｂと、第２絶縁層６２ｂの下面に配置された第２配線層６３ｂと、第１炭素層６１、第１絶縁層６２ａ及び第２絶縁層６２ｂを貫通し、第１配線層６３ａ及び第２配線層６３ｂに接続する接続部材７ａ～７ｆとを有するプリント基板６とを備え、接続部材７ａ～７ｆが、半導体チップ３ａ，３ｂに対向する領域に設けられている。【選択図】図１

半導体装置の製造方法

【課題】導電性板と樹脂との密着性を高めて剥離を防止できる半導体装置の製造方法を提供する。【解決手段】半導体装置の製造方法は、導電性板３にレーザー光を照射することにより、導電性板３のおもて面に複数の孔９を形成する第１工程と、導電性板３のおもて面に半導体素子１を搭載する第２工程と、半導体素子１と導電性板３の少なくともおもて面とを樹脂７の内部に封入する第３工程と、を含む。第１工程では、レーザー光のフォーカスを、焦点が導電性板３の内部となるように照射する。【選択図】図２

Electronic device and electronic device manufacturing method

A positive electrode circuit pattern layer and a negative electrode circuit pattern layer each have a terminal region extending in a long-side direction of a rectangular insulating plate. Thicknesses of a positive electrode bonding region of a positive electrode terminal and a negative electrode bonding region of a negative electrode terminal are respectively less than thicknesses of the terminal regions of the positive electrode circuit pattern layer and the negative electrode circuit pattern layer. The lengths in the long-side direction of the positive electrode bonding region of the positive electrode terminal and the negative electrode bonding region of the negative electrode terminal are respectively greater than or equal to half the lengths in the long-side direction of the terminal regions of the positive electrode circuit pattern layer and negative electrode circuit pattern layer.

Manufucturing method of packaging structure for bipolar transistor with constricted bumps

A semiconductor module includes a laminated substrate having an insulating plate, a circuit pattern arranged on an upper surface of the insulating plate and a heat dissipating plate arranged on a lower surface of the insulating plate. The semiconductor module also includes a semiconductor device having a collector electrode arranged on its upper surface, having an emitter electrode and a gate electrode arranged on its lower surface, and bumps respectively bonding the emitter electrode and the gate electrode to an upper surface of the circuit pattern. Each of the bumps is made of a sintered metal such that the bump is formed to be constricted in its middle portion in a thickness direction orthogonal to a surface of the insulating plate.

半導体装置

【課題】半導体素子の熱ダメージを防止する。 【解決手段】複数の半導体素子１３ａ，１３ｂを搭載した半導体装置１００において、半導体素子１３ａ，１３ｂの上面に金属板２０を接合した。そして、金属板２０に半導体装置１００の電流経路となる導体板１５をレーザー溶接によって接合した。溶接は、導体板１５が半導体素子１３ａ，１３ｂの直上に位置する金属板２０以外の部分の金属板２０とレーザー溶接によって接合されている。これにより、レーザー溶接による熱ダメージを低減させることのできる半導体装置の実現が可能になる。 【選択図】図１

電力用半導体モジュール及び電力用半導体モジュールの製造方法

【課題】半導体チップとプリント回路基板との相対的位置ずれの影響を回避できるようにした電力用半導体モジュール及び電力用半導体モジュールの製造方法を提供する。【解決手段】電力用半導体モジュールは、積層基板６と、複数の半導体チップ１、２と、プリント回路基板１９と、複数のインターポーザ１７、１８とを備える。積層基板は、絶縁層３及び銅板４、５を有する。複数の半導体チップは、夫々おもて面及び裏面を有し、おもて面に主電極及び制御電極を有し、裏面が銅板４に固定される。プリント回路基板は、積層基板の半導体チップの搭載面側と対向して配置され、対向する面側に第１導電板２０ａ、２１ａ及び第２導電板２０ｂ、２１ｂを有する。複数のインターポーザは、主電極を第１導電板に電気的に接続し、制御電極を第２導電板に電気的に接続する。【選択図】図２

Dreidimensionale periodische Struktur und Verfahren zu ihrer Herstellung

Dreidimensionale periodische Struktur, gekennzeichnet durch: zwei Substanzen mit unterschiedlichen Dielektrizitätskonstanten, die periodisch in einem dreidimensionalen Raum verteilt sind, und einen leitenden Film mit einem Oberflächenwiderstand von etwa 0,3 Ω/Quadrat oder mehr an einer Grenzfläche zwischen den beiden Substanzen.

部分放電発生位置特定システム、部分放電発生位置特定方法及びプログラム

【課題】 本発明は、従来の時間差法とは異なる方式で部分放電の発生位置を特定することを可能とする部分放電発生位置特定システム等の提供を目的とする。【解決手段】 検査対象モジュールにおける部分放電の発生位置を特定する部分放電発生位置特定システムであって、部分放電に起因する電磁波を検出する第１センサと、前記第１センサの移動を制御する制御部と、前記第１センサが第１−１地点で検出した電磁波の波形である第１−１波形と、前記第１センサが前記第１地点とは異なる第１−２地点で検出した電磁波の波形である第１−２波形とを比較する波形比較部と、前記波形比較部の比較結果に基づいて前記発生位置を特定する位置特定部とを備える、部分放電発生位置特定装置である。【選択図】図１

冷却器、半導体モジュール

【課題】冷却用流体の冷却効率が高く、圧力損失が低い冷却器を提供する。【解決手段】本発明の冷却器６は、天板７ａ、底板７ｂ及び側板７ｃからなる冷却器ケース７と、冷却器ケース７内に配置された冷却フィン８と、冷却フィン８に接触して、冷却器ケース７内を流通する冷却用流体の流路とを備え、天板７ａ又は底板７ｂに接触する冷却対象物を冷却する。冷却フィン８は、軸部８ａと、軸部８ａから外側に突出して軸方向に螺旋状をなして延びる羽根部８ｂとを有すると共に、全体が四角柱状をなしている。冷却フィン８は、少なくとも天板７ａ及び底板７ｂに接触して配置されており、流路は、羽根部８ｂ、天板７ａ及び底板７ｂによって形成された螺旋形状を有している。【選択図】図３

Halbleitermodul

Ein Halbleitermodul umfasst: ein Vergussharz, aus dem eine Hauptklemme vorsteht, das ein Isoliersubstrat, ein Halbleiterelement und ein Verdrahtungssubstrat vergießt und das einen Mutternaufnahmeabschnitt aufweist; und eine Mutter, die in dem Mutternaufnahmeabschnitt angeordnet ist. Das Halbleitermodul weist auch eine Sammelschienenklemme auf, mit der eine Hauptklemme, die aus dem Vergussharz vorsteht, elektrisch verbunden ist und das ein Einfügungsloch aufweist, das der Mutter zugewandt ist. Mit dieser Konfiguration ist es möglich, zwei Halbleitermodule einfach zu verbinden, indem nur die Sammelschienenklemmen der Halbleitermodule unter Verwendung einer Verbindungssammelschiene verbunden werden.

インターフェースユニット及び半導体装置

【課題】省スペースでセンサを容易に搭載可能なインターフェースユニットを提供する。【解決手段】インターフェースユニットは、対向する第１及び第２の立上部分３７ｄ１、３７ｄ２によって規定されるＵ字部分を中央に挟む断面形状をなし、両端の平面部分のそれぞれを半導体ユニットに接続されるバスバー接続部とする板状のバスバーと、第１及び第２の立上部分を内部に樹脂で封止し、第１及び第２の立上部分に平行な２面をそれぞれ側面とした直方体部分を有し、第１の立上部分に沿って樹脂中にセンサ用空洞部４０ｂを設けた支持部３０ｂと、センサ用空洞部４０ｂに挿入されたセンサ６０、該センサを端部に設けたフレキシブルプリント基板、及び該フレキシブルプリント基板に設けられセンサに接続されたセンサ用配線６０ａを有し、支持部３０ｂの底面側に配置されるセンサ用回路基板７０と、を備える。【選択図】図６

半導体装置

【課題】パワー半導体素子を搭載した半導体装置において、寄生インダクタンスを低減することができる半導体装置を提供する。【解決手段】導電板１２ａを上面側に有する絶縁回路基板１と、導電板１２ａ上に搭載された半導体チップと、半導体チップに電気的に接続され、内側導体層６１、内側導体層６１の外周に設けられた外側導体層６３、及び内側導体層６１と外側導体層６３の間に設けられた絶縁層６２を有する外部接続端子６ａとを備える。【選択図】図４

半導体装置

【課題】半導体モジュールの電流オン・オフ時の変形を抑制することができ、コンパウンドのポンプアウトを低減することができる半導体装置を提供する。【解決手段】絶縁回路基板と、絶縁回路基板の一方の主面側に設けられた半導体チップと、絶縁回路基板の一方の主面側に設けられた外部接続端子６ａ～６ｃと、を備える半導体モジュール１と、半導体モジュール１の一方の主面に対向して設けられ、外部接続端子６ａ～６ｃが挿入された貫通孔２０ａ，２０ｂを有する外部プリント基板２０と、半導体モジュール１の一方の主面と外部プリント基板２０との間に設けられ、半導体モジュール１の一方の主面に押圧力Ｆ１，Ｆ２を付与する弾性部材７１，７２と、を備える。【選択図】図１