Настройки

Укажите год
-

Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

Подробнее
-

Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

Подробнее

Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Укажите год
Укажите год
Применить Всего найдено 9. Отображено 9.
30-03-2006 дата публикации

Film forming method

Номер: US20060068101A1
Автор: Hideaki Machida, Yoshio Ohshita, Atsushi Ogura, Masato Ishikawa
Принадлежит: Tri Chemical Laboratories Inc.

A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form tungsten films (tungsten silicide films or tungsten nitride films) of which purity is high at a low temperature. A film forming material for forming tungsten films, tungsten silicide films, or tungasten nitride films is provided, wherein a W source of said film is one or more chemical compounds selected from the group consisting of a hexadimethylaminoditungsten, a hexaethylmethylaminoditungsten, and a hexadiethylaminoditungsten.

Подробнее
Номер записи: 1
17-03-2005 дата публикации

Film forming material, film forming method, and silicide film

Номер: US20050059243A1
Автор: Hideaki Machida, Yoshio Ohshita, Masato Ishikawa, Takeshi Kada
Принадлежит: Tri Chemical Laboratories Inc.

A technique is provided of forming silicide films usable for next-generation transistors through a CVD process. In the technique of forming a silicide film formed of Ni and Si, where one or more chemical compounds represented with the following general formula [I] are used as an Ni source: General Formula [I] where R1, R2, R3, R4, R5, R6, R7, R8, R9, or R10 is H or a hydrocarbon group.

Подробнее
Номер записи: 2
03-03-2005 дата публикации

Film forming material, film forming method, and film

Номер: US20050048799A1
Автор: Hideaki Machida, Takeshi Kada, Masato Ishikawa, Yoshio Ohshita
Принадлежит: Tri Chemical Laboratories Inc.

A technique is provided of creating high-purity amorphous gate oxides film through a CVD process. In the technique of creating Hf—Si oxide films through the chemical vapor deposition process, Si(OR)4 and Hf(NR′R″)4 are used.

Подробнее
Номер записи: 3
30-03-2006 дата публикации

Film forming method

Номер: US20060068103A1
Автор: Hideaki Machida, Yoshio Ohshita, Atsushi Ogura, Masato Ishikawa
Принадлежит: Tri Chemical Laboratories Inc.

A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form tungsten films (tungsten silicide films or tungsten nitride films) of which purity is high at a low temperature. A film forming material for forming tungsten films, tungsten silicide films, or tungasten nitride films is provided, wherein a W source of said film is one or more chemical compounds selected from the group consisting of a biscyclopentadienyltungsten dihydride, a bismethylcyclopentadienyltungsten dihydride, a bisethylcyclopentadienyltungsten dihydride, and a bisisopropylcyclopentadienyltungsten dihydride.

Подробнее
Номер записи: 4
30-03-2006 дата публикации

Film forming method

Номер: US20060067230A1
Автор: Hideaki Machida, Yoshio Ohshita, Atsushi Ogura, Masato Ishikawa
Принадлежит: Tri Chemical Laboratories Inc.

A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form molybdenum films (molybdenum silicide films or molybdenum nitride films) of which purity is high at a low temperature. A film forming material for forming molybdenum films, molybdenum silicide films, or tungasten nitride films is provided, wherein a Mo source of said film is one or more chemical compounds selected from the group consisting of a hexadimethylaminodimolybdenum, a hexaethylmethylaminodimolybdenum, and a hexadiethylaminodimolybdenum.

Подробнее
Номер записи: 5
09-02-2006 дата публикации

Film forming method

Номер: US20060030161A1
Автор: Hideaki Machida, Yoshio Ohshita, Atsushi Ogura, Masato Ishikawa, Takeshi Kada
Принадлежит: Tri Chemical Laboratories Inc.

A technique capable of forming an NiSi film having excellent characteristics, which TiSi2 or CoSi2 produced thus far is not able to assume, without damaging a substrate is provided. A film forming material for forming a nickel silicide film or a Nickel film is provided, wherein an Ni source of said film is Ni(PF3)4.

Подробнее
Номер записи: 6
16-05-2006 дата публикации

Film forming material, film forming method, and silicide film

Номер: US0007045457B2
Автор: Hideaki Machida, Yoshio Ohshita, Masato Ishikawa, Takeshi Kada, MACHIDA HIDEAKI, OHSHITA YOSHIO, ISHIKAWA MASATO, KADA TAKESHI
Принадлежит: Tri Chemical Laboratores Inc., TRI CHEMICAL LAB INC, TRI CHEMICAL LABORATORES INC.

A technique is provided of forming silicide films usable for next-generation transistors through a CVD process. In the technique of forming a silicide film formed of Ni and Si, where one or more chemical compounds represented with the following general formula [I] are used as an Ni source: where R1, R2, R3, R4, R5, R6, R7, R8, R9, or R10 is H or a hydrocarbon group.

Подробнее
Номер записи: 7
30-03-2006 дата публикации

Film forming method

Номер: US20060068100A1
Автор: Hideaki Machida, Yoshio Ohshita, Atsushi Ogura, Masato Ishikawa
Принадлежит: Tri Chemical Laboratories Inc.

A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form molybdenum films (molybdenum silicide films or molybdenum nitride films) of which purity is high at a low temperature. A film forming material for forming molybdenum films, molybdenum silicide films, or tungsten nitride films is provided, wherein a Mo source of said film is one or more chemical compounds selected from the group consisting of a biscyclopentadienylmolybdenum dihydride, a bismethylcyclopentadienylmolybdenum dihydride, a bisethylcyclopentadienylmolybdenum dihydride, and a bisisopropylcyclopentadienylmolybdenum dihydride.

Подробнее
Номер записи: 8
25-12-2007 дата публикации

Film forming method

Номер: US0007312140B2
Автор: Hideaki Machida, Yoshio Ohshita, Atsushi Ogura, Masato Ishikawa, MACHIDA HIDEAKI, OHSHITA YOSHIO, OGURA ATSUSHI, ISHIKAWA MASATO
Принадлежит: Tri Chemical Laboratories Inc., TRI CHEMICAL LAB INC, TRI CHEMICAL LABORATORIES INC.

A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form molybdenum films (molybdenum silicide films or molybdenum nitride films) of which purity is high at a low temperature. A film forming material for forming molybdenum films, molybdenum silicide films, or tungasten nitride films is provided, wherein a Mo source of said film is one or more chemical compounds selected from the group consisting of a hexadimethylaminodimolybdenum, a hexaethylmethylaminodimolybdenum, and a hexadiethylaminodimolybdenum.

Подробнее
Номер записи: 9