Настройки

Укажите год
-

Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

Подробнее
-

Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

Подробнее

Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Укажите год
Укажите год
Применить Всего найдено 6. Отображено 6.
23-06-2023 дата публикации

Signal acquisition and imaging system suitable for array superconducting single-photon detector

Номер: CN116295826A
Автор: ZHANG LEBAO, WANG XIMING, GUAN YANQIU, WANG ZHIHAO, HU XIAOWEN
Принадлежит:

The invention discloses a signal acquisition and imaging system suitable for an array superconducting single-photon detector. The signal acquisition and imaging system comprises an optical loop, a reading circuit, a time-to-digital converter and an image generation system, an optical loop is established and used for adjusting the laser pulse direction, and light pulses are converged to a nanowire detection area; response signals of the array superconducting single-photon detector are obtained through a reading circuit, and row and column circuits connected with pixels are amplified to generate two pulses with opposite polarities on rows and columns respectively; the time-to-digital converter obtains the arrival time of each pulse signal and transmits information with timestamps to the image generation system; and the image generation system performs analysis based on the received signals, calculates the actual photoresponse count value of each pixel, and outputs a visual image through a ...

Подробнее
Номер записи: 1
05-05-2023 дата публикации

Reading circuit of large-array superconducting single-photon detector

Номер: CN116067491A
Автор: ZHANG LEBAO, HU XIAOWEN, HUANG YANGHUI, WANG ZHIHAO, WANG XIMING
Принадлежит:

The invention discloses a readout circuit of a large-array superconducting single-photon detector. The readout circuit comprises an NTRON interconnection readout module, an NTRON output signal processing module, a TAC readout module and a quantization time amplitude module. The large-array SNSPD device is connected with the NTRON interconnection read-out module, and the NTRON output signal processing module processes NTRON output signals and inputs the NTRON output signals to the TAC read-out module; the TAC reading module performs time amplitude conversion on the signal output by the NTRON output signal processing module and measures a time interval; and the quantization time amplitude module quantizes the time interval measured by the TAC reading module to obtain an accurate time interval. According to the invention, based on a large-array SNSPD reading mode of TAC and NTRON, the time interval and the spatial position of the response can be read.

Подробнее
Номер записи: 2
14-07-2023 дата публикации

Three-stage precooling low-temperature thermostat of multi-channel superconducting single-photon detector

Номер: CN116429248A
Автор: ZHANG LEBAO, DAI YI, KANG LIN, WU PEIHENG
Принадлежит:

The three-stage pre-cooling cryostat comprises a vacuum cover, a GM refrigerating machine second-stage air cylinder, a GM refrigerating machine first-stage air cylinder, a GM refrigerating machine cold head, a first-stage pre-cooling structure, a second-stage pre-cooling structure, a third-stage pre-cooling structure, a low-temperature radio frequency coaxial line and a sample table used for containing the superconducting single-photon detector. The first-stage pre-cooling structure, the second-stage pre-cooling structure and the third-stage pre-cooling structure are sequentially arranged in the vacuum cover from bottom to top; through a three-stage pre-cooling mode, the temperature of the sample table is not increased along with the increase of the number of the radio frequency coaxial lines, the temperature of the sample table is ensured to be stabilized at the working temperature of the detector, and the detector can continuously and stably work in the optimal state.

Подробнее
Номер записи: 3
05-05-2023 дата публикации

Nondestructive preparation method of two-dimensional superconducting nanometer integrated circuit

Номер: CN116075207A
Автор: ZHANG LEBAO, WANG XIAOHAN, WANG HAO, MA LIANG, YANG ZHUOLIN
Принадлежит:

The invention discloses a lossless preparation method of a two-dimensional superconducting nano integrated circuit, which is characterized by comprising the following steps of: firstly, growing an ultrathin transition metal film on a substrate; then electron beam exposure and reactive ion etching are utilized to obtain a nanometer integrated circuit device of the superconducting metal film; converting the metal film nano device into a nano integrated device of a two-dimensional superconducting film in situ by utilizing a topological chemical conversion method; and finally, growing a layer of insulating material on the device to obtain the two-dimensional superconducting nanometer integrated circuit. According to the method, the damage effect of a traditional micro-nano machining process on the low-dimensional material is effectively avoided, and lossless preparation of various low-dimensional material devices is achieved. And meanwhile, preparation of various device structures can be realized ...

Подробнее
Номер записи: 4
05-05-2023 дата публикации

Reading circuit applied to large-area microwire single-photon detector

Номер: CN116067512A
Автор: ZHANG LEBAO, GUO YUQING, LI FEIYAN
Принадлежит:

The readout circuit comprises a detector, a low-noise voltage source, a bias three-way DC and an amplifier, the low-noise voltage source provides bias current for a device through a resistor via the bias three-way DC end, the bias three-way DC end is connected with one end of the detector, and when photons irradiate the surface of the detector, the amplifier is connected with the bias three-way DC end. When the detector is quenched, the instantaneous pulse is transmitted to the amplifier through the RF end of the bias tee joint, and a resistor is connected in series between the DC end of the bias tee joint and the amplifier. The method has the beneficial effects that (1) the operation is simple, and the overshoot effect output by the large-area superconducting single-photon detector can be improved only by connecting resistors with proper resistance values in series; (2) the overshoot effect of the large-area superconducting single-photon detector is effectively improved, the recovery time ...

Подробнее
Номер записи: 5
07-04-2023 дата публикации

Preparation method of planar Schottky diode terahertz detector chip

Номер: CN115939262A
Автор: TU XUECOU, WANG WOHU, YE ZIYAO, WU QIANGQIANG, ZHAO QINGYUAN, ZHANG LEBAO, JIA XIAOQING, CHEN JIAN, WANG HUABING, KANG LIN, WU PEIHENG
Принадлежит:

The invention provides a preparation method of a planar Schottky diode terahertz detector chip, a passivation layer and an epitaxial layer are etched in sequence, after the etching process is completed, an electron beam is adopted to evaporate and deposit a gold film to manufacture ohmic contact, and the etching of the epitaxial layer is realized through a wet etching process; the passivation layer is etched, after the etching process is completed, electron beam evaporation is adopted to deposit a gold film to manufacture the Schottky contact, and etching of the passivation layer is achieved through the etching process combining a dry method and a wet method; preparing a metal microbridge and an electrode of the Schottky diode, leading out a cathode of the planar Schottky diode through an ohmic contact growing on the buffer layer, and leading out an anode of the planar Schottky diode through an air microbridge in contact with the Schottky diode; and the passivation layer, the epitaxial ...

Подробнее
Номер записи: 6