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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 4. Отображено 4.
25-08-2023 дата публикации

Vortex tube-based low-energy-consumption freeze-thaw cycle centrifugal simulation device and method

Номер: CN116642918A
Принадлежит:

The invention discloses a low-energy-consumption freezing and thawing cycle centrifugal simulation device and method based on a vortex tube. The cold-heat flow separation equipment is matched with the airflow control assembly, cold end refrigeration and hot end heating are utilized, the target of simulating seasonal changes of the environment temperature in the supergravity environment is achieved, the cold-heat flow separation equipment is installed on the model box, the input end of the cold-heat flow separation equipment is connected with the compressed air module, and the output end of the cold-heat flow separation equipment is connected with the interior of the model box. A side slope model is prepared in the model box, and a temperature and pore pressure sensor is embedded in the side slope model; the cold-heat flow separation equipment and the temperature sensor are connected with the programmable controller, real-time feedback adjustment of the environment temperature is achieved ...

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23-05-2023 дата публикации

Contact features for semiconductor devices and methods of forming same

Номер: CN116153785A
Принадлежит:

The invention relates to a contact feature of a semiconductor device and a method of forming the same. A method includes forming a dielectric layer over an epitaxial source/drain region, forming an opening in the dielectric layer. The opening exposes a portion of the epitaxial source/drain region. A barrier layer is formed on sidewalls and a bottom of the opening. An oxidation process is performed on sidewalls and a bottom of the opening. An oxidation process converts a portion of the barrier layer into an oxidation barrier layer and a portion of the dielectric layer adjacent the oxidation barrier layer into a liner layer. And removing the oxidation barrier layer. The opening is filled with a conductive material from bottom to top, the conductive material being in physical contact with the liner layer.

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25-08-2023 дата публикации

Supergravity ground-gas convective heat transfer similarity law verification test device and method

Номер: CN116642922A
Принадлежит:

The invention discloses a supergravity ground-gas convective heat transfer similarity law verification test device and method. The input end of the airflow feedback control system is connected with an air source supply system consisting of an air compressor, a dryer and a pre-cooler, and the output end is connected with the vortex tube refrigeration system; compressed air is subjected to vortex separation through a vortex tube to form cold air flow, the cold air flow is introduced into a soil body sample cabin containing a vacuum heat insulation layer through a cold conveying pipeline, and the air flow skims over the surface of a soil body to form a convective heat exchange boundary layer; by implementing feedback control on the pressure and flow of compressed air and adjusting the cold flow state of a sample cabin, the simulation of a real atmosphere-soil body interface convective heat transfer process is realized, and the method comprises the steps of device installation, realization ...

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23-06-2023 дата публикации

Contact features for semiconductor devices and methods of forming same

Номер: CN116314030A
Принадлежит:

The invention relates to a contact feature of a semiconductor device and a method of forming the same. A method includes forming a dielectric layer over a source/drain region. An opening is formed in the dielectric layer. The opening exposes a portion of the source/drain region. A conductive liner is formed on sidewalls and a bottom of the opening. A surface modification process is performed on the exposed surface of the conductive liner. A surface modification process forms a surface coating over the conductive liner. The surface coating is removed to expose the conductive liner. The conductive liner is removed from sidewalls of the opening. The opening is filled with a conductive material in a bottom-up manner. The conductive material is in physical contact with the remaining portion of the conductive liner and the dielectric layer.

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