Incident radiation induced subsurface damage for controlled crack propagation in material cleavage

A cleaving system employs a shaper, a positioner, an internal preparation system, an external preparation system, a cleaver, and a cropper to cleave a workpiece into cleaved pieces. The shaper shapes a workpiece into a defined geometric shape. The positioner then positions the workpiece such that the internal preparation system can generate a separation layer at the cleaving plane. The internal preparation system focuses a laser beam internal to the workpiece at a focal point and scans the focal point across the cleaving plane to create the separation layer. The external preparation system scores the external surface of the workpiece at a location coincident with the separation layer. The cleaver cleaves the workpiece by propagating the crack on the external surface along the separation layer. The cropper shapes the cleaved piece into a geometric shape as needed.

SEMICONDUCTOR DIE SINGULATION METHODS

In one embodiment, a method of singulating semiconductor die from a semiconductor wafer includes forming a material on a surface of a semiconductor wafer and reducing a thickness of portions of the material. Preferably, the thickness of the material is reduced near where singulation openings are to be formed in the semiconductor wafer. 1. (canceled)2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. (canceled)7. (canceled)8. (canceled)9. (canceled)10. (canceled)11. A cutting tool comprising:a central support section having a major axis;a cutting tip;a cutting surface adjacent to the cutting tip and extending from the cutting tip toward the central support section terminating in a distal end of the cutting surface wherein the cutting surface is attached to the central support section;a depth stop spaced a first distance from the cutting tip toward the central support section wherein, a first volume is formed by a portion of the cutting surface extending from the cutting tip to the depth stop; andan accumulation region adjacent to the central support section and extending away from the cutting surface, the accumulation region having a second volume that approximates the first volume.12. The cutting tool of wherein the accumulation region extends from the distal end of the cutting surface away from the cutting tip.13. The cutting tool of wherein the depth stop has a first portion that is configured to engage with a surface of a conductor on a semiconductor wafer to limit a depth of penetration of the cutting tip into the conductor.14. The cutting tool of wherein the central support section is rotatingly coupled to the cutting surface.15. The cutting tool of wherein the cutting surface angularly extends from the cutting tip to the central support section.16. The cutting tool of wherein the accumulation region is formed as a recess disposed within the central support section claim 11 , the accumulation region positioned adjacent to the distal end of the cutting ...

WAFER GROUP, WAFER MANUFACTURING DEVICE, AND WAFER MANUFACTURING METHOD

A wafer group facilitates securing uniformity of products manufactured from the wafer group whose composition varies among wafers. A technique excludes uncertain factors in forming OF, forming OF with extremely high probability and extremely high accuracy, the wafer group being constituted by a plurality of wafers obtained from the same ingot, with all wafers having an orientation flat (OF), wherein the wafer group is constituted by 70 or more wafers, and in the OF orientation accuracy of the wafer group represented by an angle, the OF orientation accuracy in each wafer is within ±0.010°. 1. A wafer group constituted by a plurality of wafers obtained from the same ingot , with all wafers having an orientation flat (OF) , wherein the wafer group is constituted by 70 or more wafers , and in the OF orientation accuracy of the wafer group represented by an angle , the OF orientation accuracy in each wafer is within ±0.010°.2. The wafer group according to claim 1 , wherein at least one of the following conditions are satisfied claim 1 ,(Condition 1) A value obtained by subtracting a minimum value from a maximum value of the OF orientation accuracy in each wafer, is 0.010° or less.(Condition 2) A value obtained by subtracting an average value of the OF orientation accuracy of the wafer group from the maximum value of the OF orientation accuracy in each wafer, is 0.006° or less.(Condition 3) A value obtained by subtracting the minimum value of the OF orientation accuracy in each wafer from the average value of the OF orientation accuracy of the wafer group, is 0.006° or less.(Condition 4) A standard deviation of the OF orientation accuracy of the wafer group, is 0.0015 or less.3. The wafer group according claim 1 ,wherein for each wafer constituting the wafer group, a plot is formed in which the number of each wafer sequentially given from the side close to one end of the ingot is taken as X axis, and a concentration of a predetermined element in each wafer is taken as Y ...

LASER PROCESSING METHOD, SEMICONDUCTOR MEMBER MANUFACTURING METHOD, AND LASER PROCESSING DEVICE

There is provided a laser processing method for cutting a semiconductor object along a virtual plane facing a surface of the semiconductor object in the semiconductor object. The laser processing method includes a first step of forming a plurality of first modified spots along the virtual plane to obtain first formation density, by causing laser light to enter into the semiconductor object from the surface, and a second step of forming a plurality of second modified spots along the virtual plane so as to obtain second formation density higher than the first formation density, by causing laser light to enter into the semiconductor object from the surface after the first step. 1: A laser processing method for cutting a semiconductor object along a virtual plane facing a surface of the semiconductor object in the semiconductor object , the method comprising:a first step of forming a plurality of first modified spots along the virtual plane to obtain first formation density, by causing laser light to enter into the semiconductor object from the surface; anda second step of forming a plurality of second modified spots along the virtual plane so as to obtain second formation density higher than the first formation density, by causing laser light to enter into the semiconductor object from the surface after the first step.2: The laser processing method according to claim 1 , wherein in the first step claim 1 , the first modified spots are formed so that a plurality of fractures respectively extending from the plurality of first modified spots are not connected to each other.3: The laser processing method according to claim 1 , wherein in the second step claim 1 , the plurality of second modified spots are formed so that a plurality of fractures respectively extending from the plurality of second modified spots are connected to each other.4: The laser processing method according to claim 1 , wherein in the second step claim 1 , the plurality of second modified spots are ...

Method for Modifying Substrates Based on Crystal Lattice Dislocation Density

A method includes: providing a semiconductor body having a generation plane and crystal lattice planes which intersect the generation plane at intersecting lines; generating modifications in the semiconductor body by multiphoton excitation and which are spaced apart from one another, the modifications altering a physical property of the semiconductor body so as to form subcritical cracks in the generation plane; and separating a solid-state layer from the semiconductor body by connecting the subcritical cracks in the generation plane. 1. A method , comprising:providing a semiconductor body having a generation plane and crystal lattice planes which intersect the generation plane at intersecting lines;generating modifications in the semiconductor body by multiphoton excitation and which are spaced apart from one another, the modifications altering a physical property of the semiconductor body so as to form subcritical cracks in the generation plane; andseparating a solid-state layer from the semiconductor body by connecting the subcritical cracks in the generation plane.2. The method of claim 1 , wherein generating the modifications in the semiconductor body by multiphoton excitation comprises:using a same polarization to form a group of modifications oriented in a same direction.3. The method of claim 1 , wherein generating the modifications in the semiconductor body by multiphoton excitation comprises:using a first polarization to form a first group of modifications oriented in a first direction; andusing a second polarization different than the first polarization to form a second group of modifications oriented in a second direction different than the first direction.4. The method of claim 1 , wherein generating the modifications in the semiconductor body by multiphoton excitation comprises:adjusting a polarization used to form a group of modifications so that an orientation of the modifications in the group deviate from one another.5. The method of claim 1 , ...

Method of Controlled Crack Propagation for Material Cleavage using Electromagnetic Forces

To address the needs in the art, a method of cleaving substrate material that includes forming an initial crack in a bulk substrate material, where the crack is aligned along a cleaving plane of the bulk substrate material, aligning the cleaving plane between two parallel electrodes in a controlled environment, wherein the parallel electrodes include a top electrode and a bottom electrode, where the cleaving plane is parallel with the two parallel electrodes, where a bottom portion of the bulk substrate material is physically and electrically connected to the bottom electrode, and applying a voltage across the two parallel electrodes, where the voltage is at least 50 kV and establishes a uniform electromagnetic force on the top surface of the bulk substrate material, where the electromagnetic force is capable of inducing crack propagation along the cleaving plane and separating a cleaved substrate material from the bulk substrate material. 1. A method of cleaving substrate material , comprising:a. forming an initial crack in a bulk substrate material, wherein said crack is aligned along a cleaving plane of said bulk substrate material;b. aligning said cleaving plane between two parallel electrodes in a controlled environment, wherein said parallel electrodes comprise a top electrode and a bottom electrode, wherein said cleaving plane is parallel with said two parallel electrodes, wherein a bottom portion of said bulk substrate material is physically and electrically connected to said bottom electrode; andc. applying a voltage across said two parallel electrodes, wherein said voltage is at least 50 kV, wherein said voltage establishes a uniform electromagnetic force on said top surface of said bulk substrate material, wherein said electromagnetic force is capable of inducing crack propagation along said cleaving plane and separating a cleaved substrate material from said bulk substrate material.2. The method according to claim 1 , wherein forming said initial crack ...

METHOD OF PRODUCING SiC WAFER

An SiC wafer is generated from an SiC ingot by a peel-off plane generating step for generating a peel-off plane by forming a separation layer made up of a modified layer, and cracks extending from the modified layer along a c-plane, a plurality of times by indexing-feeding a focused point of a pulsed laser beam and the SiC ingot relative to each other in a direction in which an off-angle is formed, thereby forming a plurality of separation layers to generate the peel-off plane. The peel-off plane generating step includes relatively moving the focused point from an end to an opposite end of the SiC ingot in a forward stroke and relatively moving the focused point from the opposite end to the end of the SiC ingot in a backward stroke to trace back the separation layer that has already been formed in the forward stroke. 1a peel-off plane forming step of forming a peel-off plane in the SiC ingot by performing a separation layer forming step by positioning a focused point of a pulsed laser beam having a wavelength with which SiC is transmittable in the SiC ingot at a depth, from the first surface, corresponding to the thickness of a wafer to be produced from the SiC ingot, and applying a pulsed laser beam to the SiC ingot while the SiC ingot and the focused point are relatively processing-fed in a first direction perpendicular to a second direction in which the off-angle is formed, thereby forming a separation layer made up of a modified layer where SiC is separated into Si and C by a pulsed laser beam applied thereto and a pulsed laser beam applied next thereto is absorbed by the previously formed C, separating SiC into Si and C in a chain reaction, and cracks extending from the modified layer along the c-plane, the separation layer forming step being performed a plurality of times by indexing-feeding the SiC ingot and the focused point relatively to each other in the second direction in which the off-angle is formed, thereby forming a plurality of separation layers to ...

METHOD AND APPARATUS FOR THINNING WAFER

A method and an apparatus for thinning a wafer are provided. The method for thinning a wafer, according to one embodiment of the present invention, comprises the steps of: irradiating a line beam focused at a specific depth of the wafer; scanning the wafer by using the line beam so as to form an interface at the specific depth of the wafer; and cleaving the wafer on which the interface is formed into a pattern wafer and a dummy wafer. 1. A method for thinning a wafer , comprising:irradiating a line beam focused at a specific depth of a wafer;scanning the wafer by using the line beam and forming an interface at the specific depth of the wafer; andcleaving the wafer in which the interface is formed into a pattern wafer and a dummy wafer.2. The method of claim 1 , wherein the irradiating of the line beam includes:irradiating a laser beam; andshaping the laser beam to generate the line beam.3. The method of claim 1 , wherein the forming of the interface includes:adjusting at least one of a scan rate of the line beam or an intensity of the line beam; andforming grid pattern lines at the specific depth of the wafer.4. The method of claim 1 , further comprising: forming a circuit pattern on the dummy pattern and recycling the dummy pattern.5. An apparatus for thinning a wafer claim 1 , comprising:a wafer support unit supporting and fixing one surface of a wafer thereby;a laser light source unit irradiating a laser beam;a line beam-optical unit generating a line beam by shaping the laser beam, and irradiating the line beam to a specific depth of the wafer in accordance with a size of the wafer;a gantry unit transferring at least one of the line beam-optical unit or the wafer support unit in an XY direction in order to scan the wafer using the line beam;a wafer fixing unit fixing the other surface of the wafer; anda cleaving and transferring unit transferring the wafer support unit and the wafer fixing unit in opposite directions and cleaving the wafer into a pattern wafer ...

APPARATUS FOR DIVIDING WORKPIECE

A dividing apparatus divides a workpiece along projected dicing lines into chips, the workpiece being stuck to an upper surface of a protective tape mounted on an annular frame. The dividing apparatus includes a frame holding unit for holding the annular frame and a dividing unit for pressing the workpiece in the vicinity of one at a time of the projected dicing lines and dividing the workpiece into chips along the projected dicing line. The dividing unit includes a holder for holding a portion of the workpiece in the vicinity of the projected dicing line where the workpiece is to be broken, from both upper and lower surfaces of the workpiece, and a presser for pressing chips next to chips held by the holder across the projected dicing line where the workpiece is to be broken, thereby to divide the workpiece along the projected dicing line. 1. A dividing apparatus for dividing a plate-shaped workpiece along projected dicing lines thereon , the workpiece being stuck to an upper surface of a protective tape mounted on an annular frame and having a strength reduced along the projected dicing lines , comprising:a frame holding unit having a holding surface for holding the annular frame, the frame holding unit being rotatable about its own axis;a detecting unit configured to detect the projected dicing lines on the workpiece stuck to the protective tape;a dividing unit configured to divide the workpiece into chips along a projected dicing line among the plurality of the projected dicing lines detected by the detecting unit; anda moving mechanism configured to move the frame holding unit and the dividing unit with respect to each other; whereinthe dividing unit includes:a holder configured to hold one of two regions of the workpiece which are next to each other across the detected projected dicing line where the workpiece is to be broken, from both upper and lower surfaces of the workpiece; anda presser configured to press an other of the two regions of the workpiece ...

METHOD FOR DIVIDING BRITTLE-MATERIAL SUBSTRATE

A cutter edge is pressed against a brittle-material substrate so that a protruding portion of the cutter edge is positioned between a first edge of the brittle-material substrate and a side portion of the cutter edge and that a side portion of the cutter edge is positioned between the protruding portion of the cutter edge and a second edge of the brittle-material substrate. A scribe line is formed by a scratch between a first position closer to the first edge of the first and second edges and a second position closer to the second edge of the first and second edges. After the formation of the scribe line, a crack is extended in a thickness direction from the second position toward the first position along the scribe line, thus forming a crack line. 1. A method for dividing a brittle-material substrate , the method comprising:preparing a brittle-material substrate including a surface and having a thickness direction perpendicular to said surface, said surface being surrounded by a perimeter including first and second edges opposite to each other;pressing a cutter edge against said surface of said brittle-material substrate, said cutter edge including a protruding portion and a side portion extending from said protruding portion and having a convex shape, said pressing being performed so that, on said surface of said brittle-material substrate, said protruding portion of said cutter edge is positioned between said first edge and said side portion and said side portion of said cutter edge is positioned between said protruding portion and said second edge;forming a scribe line having a groove shape between a first position closer to said first edge of said first and second edges and a second position closer to said second edge of said first and second edges on said surface of said brittle-material substrate by causing said cutter edge pressed in said pressing to slide on said surface of said brittle-material substrate;after said forming a scribe line, forming a crack ...

SILICON CARBIDE WAFERS WITH RELAXED POSITIVE BOW AND RELATED METHODS

Silicon carbide (SiC) wafers and related methods are disclosed that include intentional or imposed wafer shapes that are configured to reduce manufacturing problems associated with deformation, bowing, or sagging of such wafers due to gravitational forces or from preexisting crystal stress. Intentional or imposed wafer shapes may comprise SiC wafers with a relaxed positive bow from silicon faces thereof. In this manner, effects associated with deformation, bowing, or sagging for SiC wafers, and in particular for large area SiC wafers, may be reduced. Related methods for providing SiC wafers with relaxed positive bow are disclosed that provide reduced kerf losses of bulk crystalline material. Such methods may include laser-assisted separation of SiC wafers from bulk crystalline material. 1. A silicon carbide (SiC) wafer comprising:a silicon face and a carbon face;a diameter of at least 200 millimeters (mm); anda relaxed positive bow from the silicon face.2. The SiC wafer of claim 1 , wherein the relaxed positive bow is in a range from greater than 0 μm to 50 μm.3. The SiC wafer of claim 1 , wherein the relaxed positive bow is in a range from greater than 0 μm to 40 μm.4. The SiC wafer of claim 1 , wherein the relaxed positive bow is in a range from greater than 0 μm to 15 μm.5. The SiC wafer of claim 1 , wherein the relaxed positive bow is in a range including 30 μm to 50 μm.6. The SiC wafer of claim 1 , wherein the relaxed positive bow is in a range including 8 μm to 16 μm.7. The SiC wafer of claim 1 , wherein the SiC wafer comprises an n-type conductive SiC wafer.8. The SiC wafer of claim 1 , wherein the SiC wafer comprises a semi-insulating SiC wafer.9. The SiC wafer of claim 1 , wherein the SiC wafer comprises an unintentionally doped SiC wafer.10. The SiC wafer of claim 1 , wherein the carbon face of the SiC wafer comprises a shape that corresponds to the relaxed positive bow from the silicon face.11. The SiC wafer of claim 1 , wherein a profile of the silicon ...

WAFER PRODUCING METHOD

A hexagonal single crystal wafer is produced from a hexagonal single crystal ingot. The wafer producing method includes a separation start point forming step of setting the focal point of a laser beam to the inside of the ingot at a predetermined depth from the upper surface of the ingot, which depth corresponds to the thickness of the wafer to be produced, and next applying the laser beam to the upper surface of the ingot while relatively moving the focal point and the ingot to thereby form a modified layer parallel to the upper surface of the ingot and cracks extending from the modified layer, thus forming a separation start point. A plate-shaped member having a thickness corresponding to the thickness of the wafer is separated from the ingot at the separation start point after performing the separation start point forming step, thus producing the wafer from the ingot. 1. A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot having a first surface , a second surface opposite to the first surface , a c-axis extending from the first surface to the second surface , and a c-plane perpendicular to the c-axis , the wafer producing method comprising:a separation start point forming step of setting a focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the first surface, which depth corresponds to a thickness of the wafer to be produced, and next applying the laser beam to the first surface as relatively moving the focal point and the ingot to thereby form a modified layer parallel to the first surface and cracks extending from the modified layer along the c-plane, thus forming a separation start point; anda wafer separating step of separating a plate-shaped member having a thickness corresponding to the thickness of the wafer from the ingot at the separation start point after performing the separation start point forming step, thus producing the ...

WAFER PRODUCING METHOD

A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot is disclosed. The wafer producing method includes a separation start point forming step of forming a modified layer parallel to the upper surface of the ingot and cracks extending from the modified layer to thereby form a separation start point in the ingot. The separation start point forming step includes a first separation start point forming step of setting the focal point of a laser beam at a first depth which is N times (N is an integer not less than 2) the depth corresponding to the thickness of the wafer from the upper surface of the ingot and next applying the laser beam to the ingot to thereby form a first separation start point composed of a first modified layer and first cracks extending therefrom. 1. A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot having a first surface , a second surface opposite to the first surface , a c-axis extending from the first surface to the second surface , and a c-plane perpendicular to the c-axis , the wafer producing method comprising:a separation start point forming step of setting a focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the first surface, which depth corresponds to a thickness of the wafer to be produced, and next applying the laser beam to the first surface as relatively moving the focal point and the ingot to thereby form a modified layer parallel to the first surface and cracks extending from the modified layer along the c-plane, thus forming a separation start point; anda wafer separating step of separating a plate-shaped member having a thickness corresponding to the thickness of the wafer from the ingot at the separation start point after performing the separation start point forming step, thus producing the wafer from ingot; a modified layer forming step of ...

WAFER PRODUCING METHOD

A wafer producing method produces a hexagonal single crystal wafer from a hexagonal single crystal ingot. The method includes a separation start point forming step of setting the focal point of a laser beam to the inside of the ingot at a predetermined depth from the upper surface of the ingot, which depth corresponds to the thickness of the wafer to be produced, and next applying the laser beam to the upper surface of the ingot while relatively moving the focal point and the ingot to thereby form a modified layer parallel to the upper surface of the ingot and cracks extending from the modified layer, thus forming a separation start point. The separation start point forming step includes an indexing step of relatively moving the focal point in a direction of formation of an off angle to thereby index the focal point by a predetermined index amount. 1. A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot having a first surface , a second surface opposite to the first surface , a c-axis extending from the first surface to the second surface , and a c-plane perpendicular to the c-axis , the wafer producing method comprising:a separation start point forming step of setting a focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the first surface, which depth corresponds to a thickness of the wafer to be produced, and next applying the laser beam to the first surface as relatively moving the focal point and the ingot to thereby form a modified layer parallel to the first surface and cracks extending from the modified layer along the c-plane, thus forming a separation start point; anda wafer separating step of separating a plate-shaped member having a thickness corresponding to the thickness of the wafer from the ingot at the separation start point after performing the separation start point forming step, thus producing the wafer from ingot; a ...

Method for singulating a multiplicity of chips

A method for singulating a multiplicity of chips is provided. Each chip includes a substrate, an active region arranged at least one of in or on the substrate, at least one electronic component being formed in said active region, and a dielectric above the active region. The method includes forming at least one first trench between the chips. The at least one first trench is formed through the dielectric and the active regions and extends into the substrate. The method further includes sawing the substrate material from the opposite side of the substrate relative to the first trench along a sawing path corresponding to the course of at least one first trench, such that at least one second trench is formed. The width of the at least one first trench is less than or equal to the width of the at least one second trench.

PEELING APPARATUS

A peeling apparatus includes: an ingot holding unit holding an ingot with an ingot portion corresponding to a wafer being faced up; an ultrasonic wave oscillating unit which has an end face facing the ingot portion corresponding to the wafer and oscillates an ultrasonic wave; a water supplying unit supplying water to an area between the ingot portion corresponding to the wafer and the end face of the ultrasonic wave oscillating unit; and a peeling unit that holds the ingot portion corresponding to the wafer with suction and peels off the wafer from the ingot. 1. A peeling apparatus for peeling off a wafer from an ingot formed therein with a peel-off layer by applying a laser beam of such a wavelength as to be transmitted through the ingot to the ingot , with a focal point of the laser beam positioned at a depth corresponding to the thickness of the wafer , the peeling apparatus comprising:an ingot holding unit holding the ingot with an ingot portion corresponding to the wafer being faced up;an ultrasonic wave oscillating unit which has an end face facing the ingot portion corresponding to the wafer and which oscillates an ultrasonic wave;a water supplying unit supplying water to an area between the ingot portion corresponding to the wafer and the end face of the ultrasonic wave oscillating unit; anda peeling unit which holds the ingot portion corresponding to the wafer with suction and peels off the wafer from the ingot.2. The peeling apparatus according to claim 1 ,wherein the ingot is a single crystal SiC ingot having a c-axis and a c-plane orthogonal to the c-axis, andthe peel-off layer is a peel-off layer including a modified portion and a crack, the modified portion and the crack being formed by a process in which a laser beam of such a wavelength as to be transmitted through single crystal SiC is applied to the single crystal SiC ingot, with a focal point of the laser beam positioned at a depth corresponding to the thickness of the wafer from an end face of ...

WAFER DIVIDING APPARATUS

A wafer dividing apparatus for dividing a wafer stuck to an adhesive tape and supported at an opening of a frame into individual chips along a scheduled division line is provided. The wafer dividing apparatus includes a cassette table movable upwardly and downwardly in a Z axis direction, a first carry-out/in unit that carries out the frame from the cassette placed on the cassette table or carry in the frame to the cassette, a first temporary receiving unit including a pair of first guide rails extending in the X axis direction and a guide rail opening/closing portion that increases the distance between the pair of first guide rails, a reversing unit including a holding portion that holds the frame and rotates by 180 degrees to reverse the front and back of the frame, and a transport unit that moves the reversed frame. 1. A wafer dividing apparatus for dividing a wafer stuck to an adhesive tape and supported at an opening of a frame into individual chips along a scheduled division line , comprising:a cassette table on which a cassette that accommodates a plurality of wafers each stuck to an adhesive tape and supported at an opening of a frame is placed and which is movable upwardly and downwardly in a Z axis direction;a first carry-out/in unit configured to grasp the frame and move the frame in an X axis direction orthogonal to the Z axis direction to carry out the frame from the cassette placed on the cassette table or carry in the frame to the cassette;a first temporary receiving unit including a pair of first guide rails that extend in the X axis direction and configured to support the frame carried in by the first carry-out/in unit and a guide rail opening/closing portion configured to increase a distance between the pair of first guide rails in a Y axis direction orthogonal to the Z axis direction and the X axis direction so as to permit passage of the frame in the Z axis direction;a reversing unit including a holding portion configured to hold the frame ...

WAFER PRODUCING METHOD

A hexagonal single crystal wafer is produced from a hexagonal single crystal ingot. A separation start point is formed by setting a focal point of a laser beam inside the ingot at a predetermined depth from the upper surface of the ingot, which depth corresponds to the thickness of the wafer to be produced, and next applying the laser beam to the upper surface of the ingot while relatively moving the focal point and the ingot to thereby form a modified layer parallel to the upper surface of the ingot and form cracks extending from the modified layer along a c-plane, thus forming a separation start point. The focal point is indexed by relatively moving the focal point in the direction where an off angle is formed and the c-plane is inclined downward. 1a separation start point forming step of setting a focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the first surface, which depth corresponds to a thickness of the wafer to be produced, and next applying the laser beam to the first surface as relatively moving the focal point and the ingot to thereby form a modified layer parallel to the first surface and cracks extending from the modified layer along the c-plane, thus forming a separation start point; anda wafer separating step of separating a plate-shaped member having a thickness corresponding to the thickness of the wafer from the ingot at the separation start point after performing the separation start point forming step, thus producing the wafer from the ingot; a modified layer forming step of relatively moving the focal point of the laser beam in a first direction perpendicular to a second direction where the c-axis is inclined by an off angle with respect to a normal to the first surface and the off angle is formed between the first surface and the c-plane, thereby linearly forming the modified layer extending in the first direction, and', 'an indexing step of relatively moving the focal ...

WAFER PRODUCING METHOD

A hexagonal single crystal wafer is produced from a hexagonal single crystal ingot. A separation start point is formed by setting a focal point of a laser beam inside the ingot at a predetermined depth from the upper surface of the ingot, which depth corresponds to a thickness of the wafer to be produced. The laser beam is applied to the upper surface of the ingot while relatively moving the focal point and the ingot to thereby form a modified layer parallel to the upper surface of the ingot and form cracks extending from the modified layer along a c-plane, thus forming a separation start point. The wafer is separated by immersing the ingot in water and then applying ultrasonic vibration to the ingot, thereby separating a plate-shaped member having a thickness corresponding to the thickness of the wafer from the ingot. 1. A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot having a first surface , a second surface opposite to the first surface , a c-axis extending from the first surface to the second surface , and a c-plane perpendicular to the c-axis , the wafer producing method comprising:a separation start point forming step of setting a focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the first surface, which depth corresponds to a thickness of the wafer to be produced, and next applying the laser beam to the first surface as relatively moving the focal point and the ingot to thereby form a modified layer parallel to the first surface and cracks extending from the modified layer along the c-plane, thus forming a separation start point; anda wafer separating step of separating a plate-shaped member having a thickness corresponding to the thickness of the wafer from the ingot at the separation start point after performing the separation start point forming step, thus producing the wafer from the ingot; a modified layer forming step of ...

WAFER PRODUCING METHOD AND WAFER PRODUCING APPARATUS

A wafer producing method for producing a wafer from a semiconductor ingot includes a thermal stress wave generating step of applying a pulsed laser beam having a wavelength that is absorbable by the semiconductor ingot to the semiconductor ingot held on the chuck table to generate a thermal stress wave and a fracture layer forming step of applying a pulsed laser beam having a wavelength that is transmittable through the semiconductor ingot to the semiconductor ingot in synchronism with a time during which the thermal stress wave reaches a position corresponding to a thickness of a wafer to be produced from the semiconductor ingot, causing the pulsed laser beam whose wavelength is transmittable through the semiconductor ingot to be absorbed in a region where a band gap is reduced by a tensile stress of the thermal stress wave. 1. A wafer producing method for producing a wafer from a semiconductor ingot , comprising:a holding step of holding the semiconductor ingot on a chuck table;a thermal stress wave generating step of applying a pulsed laser beam having a wavelength that is absorbable by the semiconductor ingot to an upper surface of the semiconductor ingot held on the chuck table to generate a thermal stress wave and propagating the thermal stress wave in the semiconductor ingot;a fracture layer forming step of applying a pulsed laser beam having a wavelength that is transmittable through the semiconductor ingot to the upper surface of the semiconductor ingot in synchronism with a time during which the thermal stress wave generated in the thermal stress wave generating step and propagated in the semiconductor ingot at a speed of sound depending on a material of the semiconductor ingot reaches a position corresponding to a thickness of a wafer to be produced from the semiconductor ingot, causing the pulsed laser beam whose wavelength is transmittable through the semiconductor ingot to be absorbed in a region where a band gap is reduced by a tensile stress of the ...

METHOD FOR DIVIDING BRITTLE-MATERIAL SUBSTRATE

A cutter edge is pressed against a brittle-material substrate so that a protruding portion of the cutter edge is positioned between a first edge of the brittle-material substrate and a side portion of the cutter edge and that a side portion of the cutter edge is positioned between the protruding portion of the cutter edge and a second edge of the brittle-material substrate. A scribe line is formed by a scratch between a first position closer to the first edge of the first and second edges and a second position closer to the second edge of the first and second edges. After the formation of the scribe line, a crack is extended in a thickness direction from the second position toward the first position along the scribe line, thus forming a crack line. 2. The method for dividing a brittle-material substrate according to claim 1 , whereinsaid cutter edge includes first to third surfaces adjacent to each other, a vertex at which said first to third surfaces meet, and a ridge formed by said second and third surfaces, andsaid protruding portion of said cutter edge comprises said vertex, and said side portion of said cutter edge comprises said ridge.3. The method for dividing a brittle-material substrate according to claim 1 , whereinsaid cutter edge has a shape of a cone including a vertex and a conical surface, andsaid protruding portion of said cutter edge comprises said vertex, and said side portion of said cutter edge is formed along an imaginary line extending from said vertex on said conical surface.4. The method for dividing a brittle-material substrate according to claim 1 , wherein said forming a scribe line comprisesdisplacing said cutter edge from said first position to said second position,increasing a load to be applied to said cutter edge at said second position, andcausing said cutter edge to which the increased load has been applied to slide beyond said second edge.5. The method for dividing a brittle-material substrate according to claim 1 , wherein said ...

METHOD AND APPARATUS FOR SCRIBING SILICON CARBIDE PLATE

A scribing apparatus includes a horizontal table on which a silicon carbide plate is fixed under vacuum suction; a feed screw and a Y-axis control motor for moving the table along a pair of guide rails under scribe numerical control; a guide rail device body installed above the table along an X-axis direction; a carriage mounted on the guide rail device body so as to move in the X-axis direction while being guided; a feed screw and an X-axis control motor for moving the carriage in the X-axis direction under numerical control; and a scribe head installed on the carriage 1. A silicon carbide plate scribing method comprising the steps of: first scribing a dent at a scribe starting point at the time of a scribing start; and starting scribing from within said dent.2. A silicon carbide plate scribing method comprising the steps of: first causing a cutter wheel to rotate or swing in a state in which said cutter wheel is brought into pressure contact with a silicon carbide plate at a scribe starting point at the time of a scribing start , to thereby scribe a dent at the starting point; and subsequently starting scribing from within said dent.3. A silicon carbide plate scribing method comprising the steps of: first causing a diamond scribe stylus provided separately from a cutter wheel to rotate or swing in a state in which said diamond scribe stylus is brought into pressure contact with a silicon carbide plate at a scribe starting point at the time of a scribing start , to thereby scribe a dent; subsequently causing said cutter wheel to be brought into pressure contact with the silicon carbide plate at the dent formed; and starting scribing from within said dent.4. A scribing apparatus comprising: a scribe head having a cutter wheel and adapted to scribe a scribe line by rolling said cutter wheel in a state of being pressure contact with a silicon carbide plate; and a diamond stylus unit which has a diamond scribe stylus and causes said diamond scribe stylus to be brought ...

WORKPIECE CUTTING METHOD

The object cutting method comprises a step of locating a converging point of laser light within a monocrystal sapphire substrate, while using a rear face of the monocrystal sapphire substrate as an entrance surface of the laser light, and relatively moving the converging point along each of a plurality of lines to cut set parallel to the m-plane and rear face of the substrate, so as to form a modified region within the substrate along each line and cause a fracture to reach a front face. In this step, t−[(d/)−m]/tan α Подробнее

Combined wafer production method with a receiving layer having holes

The present invention relates to a method for producing solid body layers. The claimed method comprises at least the following steps: providing a solid body ( 2 ) for separating at least one solid body layer ( 4 ), fixing the receiving layer ( 10 ) for holding the solid layer ( 4 ) to the solid body ( 2 ), said receiving layer having a plurality of holes for guiding a fluid and is fixed by means of a connecting layer to the solid body and the receiving layer ( 10 ) is subjected to thermal stress, in particular, mechanical stress, for generating voltages in the solid body ( 2 ), wherein a crack in the solid body ( 2 ) along a separation plane ( 8 ) expands due to the voltages, the solid layer ( 4 ) being separated from the solid body ( 2 ) due to the crack.

Device and Method for Applying Pressure to Stress-Producing Layers for Improved Guidance of a Separation Crack

The present invention relates to a method, according to claim , for separating at least one solid body layer (), particularly a solid body disk, from a donor substrate (). The method according to the invention comprises preferably at least the following steps: providing a donor substrate (); producing or arranging a stress-producing layer () on a particularly flat surface () of the donor substrate () which axially defines the donor substrate (); pressing at least one pressure application element () of a pressure application device () onto at least one pre-determined portion of the stress-producing layer (), in order to press the stress-producing layer () onto the surface (); separating the solid body layer () from the donor substrate () by thermally applying the stress-producing layer (), thereby producing mechanical stress in the donor substrate (), the mechanical stress creating a crack for separating a solid body layer (), and the pressure application element () being pressed onto the stress-producing layer () during the thermal application of the stress-producing layer (). 115-. (canceled)16. A method of separating a solid-state slice from a donor substrate , the method comprising:providing the donor substrate;generating or disposing a stress generation layer on a surface of the donor substrate and that axially bounds the donor substrate;pressing at least one pressurizing element of a pressurizing device onto at least one predetermined proportion of the stress generation layer for pressing the stress generation layer onto the surface;separating the solid-state slice from the donor substrate by subjecting the stress generation layer to thermal stress which generates mechanical stresses in the donor substrate and gives rise to a crack for separation of the solid-state slice,wherein the at least one pressurizing element is pressed onto the stress generation layer during the subjecting of the stress generation layer to the thermal stress.17. The method of claim 16 , ...

WAFER AND WAFER PRODUCING METHOD

A wafer producing method includes a peel-off layer forming step of applying a laser beam of a wavelength passing through a hexagonal single crystal ingot with a focal point of the laser beam positioned at a depth corresponding to a thickness of a wafer to be produced from an end face of the hexagonal single crystal ingot to form a peel-off layer, a production history forming step of applying a laser beam of a wavelength passing through the wafer with a focal point of the laser beam positioned inside the wafer at a position corresponding to each of a plurality of devices to be formed on a front surface of the wafer to form a production history, and a wafer peeling step of peeling off the wafer from the hexagonal single crystal ingot. 1. A wafer produced from a hexagonal single crystal ingot ,wherein a production history is formed by applying a laser beam of a wavelength passing through the wafer with a focal point of the laser beam positioned inside the wafer at a position corresponding to each of a plurality of devices to be formed on a front surface of the wafer.2. The wafer according to claim 1 ,wherein the hexagonal single crystal ingot is a hexagonal single crystal silicon carbide ingot.3. The wafer according to claim 1 ,wherein the production history is selected from the group consisting of American Standard Code for Information Interchange, a two dimensional barcode, a character, and Morse code.4. A wafer producing method of producing a wafer from a hexagonal single crystal ingot claim 1 , the method comprising:a peel-off layer forming step of applying a laser beam of a wavelength passing through the hexagonal single crystal ingot with a focal point of the laser beam positioned at a depth corresponding to a thickness of a wafer to be produced from an end face of the hexagonal single crystal ingot to form a peel-off layer;a production history forming step of applying a laser beam of a wavelength passing through the wafer with a focal point of the laser beam ...

CUTTING BLADE AND CUTTING APPARATUS

Disclosed herein is an electroformed cutting blade having a cutting edge containing super abrasive grains. The cutting edge further contains filler particles formed of silicon-based organic material. 1. An electroformed cutting blade having a cutting edge containing super abrasive grains , wherein said cutting edge further contains filler particles formed of silicone-based organic material.2. The electroformed cutting blade according to claim 1 , wherein the content of said filler particles in said cutting edge is set in the range of 5 vol % to less than 40 vol %.3. The electroformed cutting blade according to claim 1 , wherein the particle size of said filler particles is set in the range of 1 to 10 μm.4. A cutting apparatus comprising:a chuck table for holding a workpiece; andcutting means having a rotatable cutting blade for cutting said workpiece held on said chuck table;said cutting blade being an electroformed cutting blade having a cutting edge containing super abrasive grains, said cutting edge further containing filler particles formed of silicone-based organic material. The present invention relates to a cutting blade for cutting a workpiece such as a semiconductor wafer and also to a cutting apparatus using this cutting blade.A workpiece such as a semiconductor wafer having a plurality of devices such as integrated circuits (ICs) and large-scale integrations (LSIs) formed on the front side is divided into individual device chips by using a cutting apparatus having a rotatable cutting blade (see Japanese Patent Laid-open No. 2009-119559, for example). The plural devices are formed in a plurality of separate regions defined by a plurality of division lines previously set on the front side of the workpiece. The device chips obtained by dividing the workpiece are used in various electronic equipment. In the cutting apparatus, the cutting blade is rotated at a high speed and fed into the workpiece held on a chuck table. Further, the chuck table is fed to ...

WAFER DIVIDER AND WAFER DIVISION METHOD

A divider which divides a wafer having a division start points formed along the scheduled divisions into a plurality of device chips. The divider includes a placement table on which a wafer is placed, and division unit adapted to divide the wafer on the placement table into a plurality of device chips starting from the division start points. The placement table includes: a plurality of spherical bodies having the same diameter; a container that accommodates the plurality of spherical bodies in close contact with each other; and a placement surface formed by connecting vertices of spherical surfaces of the plurality of spherical bodies that are accommodated in close contact with each other. 1. A wafer divider comprising:a placement table on which a wafer is placed, the wafer having a device formed in each of areas partitioned by scheduled division lines, with division start points formed along the scheduled division lines; anddivision means adapted to divide the wafer on the placement table into a plurality of device chips starting from the division start points, a plurality of spherical bodies having same diameter,', 'a container that accommodates the plurality of spherical bodies in close contact with each other, and', 'a placement surface formed by connecting vertices of spherical surfaces of the plurality of spherical bodies that are accommodated in close contact with each other,, 'wherein the placement table includes'} pressing means adapted to press the wafer placed on the placement surface toward the placement surface,', 'elevating means adapted to raise or lower the pressing means, and', 'parallel movement means adapted to move the pressing means and the placement table relatively parallel along the placement surface,, 'the division means includes'}wherein the wafer on the placement table is divided into individual device chips by pressing the wafer with the pressing means.2. A wafer division method of dividing a wafer , having division start points formed ...

METHOD FOR THE MATERIAL-SAVING PRODUCTION OF WAFERS AND PROCESSING OF WAFERS

The invention relates to a method for producing a multi-layer assembly. The method according to the invention comprises at least the following steps: providing a donor substrate () for removing a solid layer (), in particular a wafer; producing modifications (), in particular by means of laser beams (), in the donor substrate () in order to specify a crack course; providing a carrier substrate () for holding the solid layer (); bonding the carrier substrate () to the donor substrate () by means of a bonding layer (), wherein the carrier substrate () is provided for increasing the mechanical strength of the solid layer () for the further processing, which solid layer is to be removed; arranging or producing a stress-producing layer () on the carrier substrate (); thermally loading the stress-producing layer () in order to produce stresses in the donor substrate (), wherein a crack is triggered by the stress production, which crack propagates along the specified crack course in order to remove the solid layer () from the donor substrate () such that the solid layer () is removed together with the bonded carrier substrate (). 115.-. (canceled)161. A method for producing a multi-layer assembly () , at least comprising the steps of:{'b': 2', '4, 'providing a donor substrate () for removing a solid layer (), in particular a wafer;'}{'b': 12', '10', '2, 'producing modifications (), in particular by means of laser beams (), in the donor substrate () in order to specify a crack course;'}{'b': 6', '4, 'providing a carrier substrate () for holding the solid layer ();'}{'b': 6', '2', '8', '6', '4, 'bonding the carrier substrate () to the donor substrate () by means of a bonding layer (), wherein the carrier substrate () is provided for increasing the mechanical strength of the solid layer () for the further processing, which solid layer is to be removed;'}{'b': 16', '6, 'arranging or producing a stress-producing layer () on the carrier substrate ();'}{'b': 16', '2', '4', '2', ' ...

Separating a wafer of light emitting devices

Embodiments of the invention are directed to a method of separating a wafer of light emitting devices. The method includes scribing a first groove on a dicing street on the wafer and checking the alignment of the wafer using a location of the first groove relative to a feature on the wafer. After checking the alignment, a second groove is scribed on the dicing street.

WAFER FORMING METHOD

A wafer forming method includes a modified layer forming step of applying a laser beam of such a wavelength as to be transmitted through an ingot to the ingot with a focal point of the laser beam positioned inside from a side surface at a position corresponding to the thickness of a wafer to be formed, to form a modified layer over the whole circumference of the side surface, a peeling-off layer forming step of exerting an external force from an upper surface of the ingot and concentrating a stress on a crack extending from the modified layer to the inside, to cause the crack to develop from the side surface side toward the inside and form a peeling-off layer, and a wafer forming step of peeling off a wafer to be formed, from the ingot, with the peeling-off layer as a start point, to form the wafer. 1. A wafer forming method for forming a wafer from a semiconductor ingot having an upper surface , a lower surface , and a side surface , the wafer forming method comprising:a modified layer forming step of applying a laser beam of such a wavelength as to be transmitted through the semiconductor ingot to the semiconductor ingot, with a focal point of the laser beam positioned inside from the side surface at a position corresponding to a thickness of a wafer to be formed, to form a modified layer over a whole circumference of the side surface or in an arcuate shape;a peeling-off layer forming step of exerting an external force from the upper surface of the semiconductor ingot and concentrating a stress on a crack extending from the modified layer to the inside to cause the crack to develop from the side surface side toward the inside, thereby forming a peeling-off layer; anda wafer forming step of peeling off the wafer to be formed, from the semiconductor ingot, with the peeling-off layer as a start point, to form the wafer.2. The wafer forming method according to claim 1 , wherein claim 1 , in the peeling-off layer forming step claim 1 , the external force exerted from ...

Production Facility for Separating Wafers from Donor Substrates

The invention relates to a production facility () for detaching wafers () from donor substrates (). According to the invention, the production facility comprises at least one analysis device () for determining at least one individual property, particularly the doping, of the respective donor substrate (), a data device () for producing donor substrate process data for individual donor substrates (), wherein the donor substrate process data comprise analysis data of the analysis device (), and the analysis data describe at least the individual property of the donor substrate (), a laser device () for producing modifications () inside the donor substrate () in order to form a region of detachment () inside the respective donor substrate (), wherein the laser device () can be operated according to the donor substrate process data of a concrete donor substrate () for the machining of the concrete donor substrate (), and a detachment device () for producing mechanical voltages inside the respective donor substrate () for triggering and/or guiding a crack for separating respectively at least one wafer () from a donor substrate (). 115-. (canceled)16. A production facility for separating wafers from donor substrates , the production facility comprising:an analysis device configured to determine at least one individual property of a respective donor substrate, the at least one individual property comprising doping and/or crystal lattice dislocations of the respective donor substrate;a data device configured to generate donor substrate process data for the respective donor substrate, the donor substrate process data comprising analysis data of the analysis device, the analysis data describing the at least one individual property of the respective donor substrate;a laser device configured to generate modifications inside the respective donor substrate to form a separating region inside the respective donor substrate, the laser device being operable as a function of the donor ...

SPLITTING OF A SOLID USING CONVERSION OF MATERIAL

The invention relates to a method for creating a detachment zone in a solid in order to detach a solid portion, especially a solid layer, from the solid, said solid portion that is to be detached being thinner than the solid from which the solid portion has been removed. According to the invention, the method comprises at least the steps of: providing a solid which is to be processed and which is preferably made of a chemical compound; providing a LASER light source; subjecting the solid to LASER radiation from the LASER light source so that the laser beams penetrate into the solid via a surface of the solid portion that is to be cut off; the LASER radiation is applied in a defined manner to a predefined portion of the solid inside the solid such that a detachment zone or a plurality of partial detachment zones is formed; the method is characterized in that a number of modifications is successively created in the crystal lattice by the applied laser radiation, and the crystal lattice fissures at least partially in the regions surrounding the modifications as a result of the modification, said fissures in the region of the modifications predefining the detachment zone or a plurality of partial detachment zones. 1. A method for separating at least one solid portion from a solid , wherein the method comprises at least the steps:modifying the crystal lattice of the solid by means of a laser,wherein a plurality of modifications are produced in the crystal lattice,wherein the crystal lattice fissures as a result of the modifications in the regions surrounding the modifications at least in respectively one portion,wherein a detachment zone is predefined by the fissures in the region of the modifications,wherein the laser beam penetrates via a polished surface into the at least partially transparent solid,wherein the fissures are subcritical and propagate less than 5 mm in the solid,wherein the subcritical fissures propagate for the most part in a plane parallel to the ...

Device and Method for Cleaving a Liquid Sample

An apparatus and method for cleaving a liquid sample are disclosed. The apparatus includes a load lock chamber containing a cleaving module, a cryo-cooler, a vacuum chamber configured to receive the cleaving module from the load lock chamber, and a gate valve between the load lock chamber and the vacuum chamber. The cleaving module is configured to cleave a crystalline sample holder and the liquid sample. The liquid sample includes one or more liquid phase materials and is cleavable by the cleaving module when in the solid phase. The cryo-cooler is configured to cool and/or maintain a temperature of the sample holder and the sample below the melting point of each of the liquid phase materials. The gate valve has at least one opening therein configured to (i) allow the cleaving module to enter and exit the vacuum chamber and/or (ii) permit gaseous communication between the load lock chamber and the vacuum chamber. 1. An apparatus for cleaving a liquid sample , comprising:a load lock chamber containing a cleaving module, the cleaving module being configured to cleave a crystalline sample holder and the liquid sample, wherein the liquid sample (i) includes one or more materials that are in a liquid phase at ambient temperatures and (ii) is cleavable by the cleaving module when in a solid phase on the sample holder;a cryo-cooler configured to cool and/or maintain a temperature of the sample holder and the sample below a melting point of each of the one or more materials that are in the liquid phase at ambient temperatures;a vacuum chamber configured to receive the cleaving module from the load lock chamber; anda gate valve between the load lock chamber and the vacuum chamber, the gate valve having at least one opening therein configured to (i) allow the cleaving module to enter and exit the vacuum chamber and/or (ii) permit gaseous communication between the load lock chamber and the vacuum chamber.2. The apparatus of claim 1 , wherein the cleaving module comprising a ...

SEPARATING A WAFER OF LIGHT EMITTING DEVICES

A method of separating a wafer including rows of light emitting devices is described. Dicing streets are provided on the wafer such that a respective one of the dicing streets is provided between each of the rows of light emitting devices on the wafer. The wafer is broken along a first one of the dicing streets to separate a first portion of the wafer from a remaining portion of the wafer. The first portion of the wafer includes more than one of the rows of light emitting devices. The first portion of the wafer is broken along a second one of the dicing streets to separate a second portion of the wafer from the first portion of the wafer. 1. A method of separating a wafer comprising a plurality of rows of light emitting devices , the method comprising:providing a plurality of dicing streets on the wafer such that a respective dicing street of the plurality of dicing streets is provided between each of the plurality of rows of light emitting devices on the wafer;breaking the wafer along a first one of the plurality of dicing streets to separate a first portion of the wafer from a remaining portion of the wafer, the first portion of the wafer comprising more than one of the plurality of rows of light emitting devices; andbreaking the first portion of the wafer along a second one of the plurality of dicing streets to separate a second portion of the wafer from the first portion of the wafer.2. The method of claim 1 , further comprising breaking the second portion of the wafer along a third one of the plurality of dicing streets to separate a third portion of the wafer from the second portion of the wafer.3. The method of claim 2 , wherein the first portion of the wafer comprises four rows of light emitting devices claim 2 , the second portion of the wafer comprises two rows of light emitting devices claim 2 , and the third portion of the wafer comprises a single light emitting device.4. The method of claim 1 , further comprising claim 1 , prior to breaking the wafer ...

SEPARATING A WAFER OF LIGHT EMITTING DEVICES

A method of separating a wafer including rows of light emitting devices is described. Dicing streets are provided on the wafer such that a respective one of the dicing streets is provided between each of the rows of light emitting devices on the wafer. The wafer is broken along a first one of the dicing streets to separate a first portion of the wafer from a remaining portion of the wafer. The first portion of the wafer includes more than one of the rows of light emitting devices. The first portion of the wafer is broken along a second one of the dicing streets to separate a second portion of the wafer from the first portion of the wafer. 1. A method of separating a wafer comprising a plurality of rows of light emitting devices , the method comprising:providing a plurality of dicing streets on the wafer such that a respective dicing street of the plurality of dicing streets is provided between each of the plurality of rows of light emitting devices on the wafer;breaking the wafer along a first one of the plurality of dicing streets to separate a first portion of the wafer from a remaining portion of the wafer, the first portion of the wafer comprising more than one of the plurality of rows of light emitting devices; andbreaking the first portion of the wafer along a second one of the plurality of dicing streets to separate a second portion of the wafer from the first portion of the wafer.2. The method of claim 1 , further comprising breaking the second portion of the wafer along a third one of the plurality of dicing streets to separate a third portion of the wafer from the second portion of the wafer.3. The method of claim 2 , wherein the first portion of the wafer comprises four rows of light emitting devices claim 2 , the second portion of the wafer comprises two rows of light emitting devices claim 2 , and the third portion of the wafer comprises a single light emitting device.4. The method of claim 1 , further comprising claim 1 , prior to breaking the wafer ...

WAFER PRODUCING METHOD

A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot, including a separation start point forming step of setting the focal point of a laser beam inside the ingot at a predetermined depth from the ingot's upper surface, which depth corresponds to the thickness of the wafer to be produced, and next applying the laser beam while relatively moving the focal point and the ingot to thereby form: (i) a modified layer parallel to the ingot's upper surface, and (ii) cracks extending from the modified layer, thus forming a separation start point. The laser beam is applied to form the modified layer in a condition where the relation of −0.3≦(d−x)/d≦0.5 holds, where d is the diameter of a focused spot of the laser beam and x is the spacing between adjacent focused spots of the laser beam. 1. A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot having a first surface , a second surface opposite to the first surface , a c-axis extending from the first surface to the second surface , and a c-plane perpendicular to the c-axis , the wafer producing method comprising:a separation start point forming step of setting a focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the first surface, which depth corresponds to a thickness of the wafer to be produced, and next applying the laser beam to the first surface as relatively moving the focal point and the ingot to thereby form a modified layer parallel to the first surface and cracks extending from the modified layer along the c-plane, thus forming a separation start point; anda wafer separating step of separating a plate-shaped member having a thickness corresponding to the thickness of the wafer from the ingot at the separation start point after performing the separation start point forming step, thus producing the wafer from the ingot; a modified layer ...

WAFER PRODUCING METHOD

Disclosed herein is a wafer producing method for producing an SiC wafer from a single crystal SiC ingot. The wafer producing method includes a separation surface forming step of forming a separation surface composed of modified layers, cracks, and connection layers inside the ingot and a wafer separating step of separating a part of the ingot along the separation surface as an interface to thereby produce the wafer. The separation surface forming step includes a modified layer forming step of forming the modified layers and the cracks extending from the modified layers along a c-plane, and a connection layer forming step of forming the connection layers each connecting the cracks formed adjacent to each other in the thickness direction of the ingot. 1. A wafer producing method for producing an SiC wafer from a single crystal SiC ingot having a first surface , a second surface opposite to said first surface , a c-axis extending from said first surface to said second surface , and a c-plane perpendicular to said c-axis , said c-axis being inclined by an off angle with respect to a normal to said first surface , said off angle being formed between said first surface and said c-plane , said wafer producing method comprising:a separation surface forming step of forming a separation surface inside said ingot at a predetermined depth from said first surface, said predetermined depth corresponding to the thickness of said wafer to be produced, said separation surface being composed of a plurality of modified layers linearly extending in a first direction perpendicular to a second direction where said off angle is formed, cracks extending from each modified layer in opposite directions along said c-plane, and a plurality of connection layers extending in a thickness direction of said wafer to be produced, each connection layer connecting said cracks extending from any adjacent ones of said modified layers; anda wafer separating step of separating a part of said ingot along ...

DEVICE AND METHOD FOR SCRIBING A BOTTOM-SIDE OF A SUBSTRATE WHILE VIEWING THE TOP SIDE

A device includes a table surface defining a horizontal plane having an x-axis and a y-axis orthogonal to the x-axis and the x-axis and y-axis lie in the horizontal plane; a scribe mounted below the horizontal plane, the scribe further disposed to present at least a portion of the tip above the horizontal plane; a rail arranges parallel to the y-axis and movable in a direction parallel to the x-axis; a sample guide configured in relation to the horizontal plane so that the sample guide arranges parallel to the x-axis and movable in a direction parallel to the y-axis; a scribe stop guide configured in relation to the horizontal plane so that the scribe guide arranges parallel to the x-axis and movable in a direction parallel to the y-axis, whereby the sample guide moves independent of the scribe stop, the scribe stop further comprising a locking mechanism. 1. A device configured to scribe a bottom side or surface of a sample or substrate while the substrate oriented with a top side facing up comprising:a substantially flat and planar table surface configured to receive the substrate, the table surface defining a horizontal plane having an x-axis and a y-axis orthogonal to the x-axis and the x-axis and y-axis lie in the horizontal plane, and further including a plurality of scale lines arranged parallel to y-axis;a scribe having a tip, the scribe mounted below the horizontal plane, the scribe further disposed to present at least a portion of the tip above the horizontal plane, the scribe further configured to adjust in angle relative to the horizontal plane and a height above the horizontal plane, or to retract below the horizontal plane;a rail configured in relation to the horizontal plane so that the rail arranges parallel to the y-axis and movable in a direction parallel to the x-axis whereby the sample can be moved relative to the x-axis in corresponding motion with the rail;a sample guide configured in relation to the horizontal plane so that the sample guide ...

Silicon carbide wafers with relaxed positive bow and related methods

Silicon carbide (SiC) wafers and related methods are disclosed that include intentional or imposed wafer shapes that are configured to reduce manufacturing problems associated with deformation, bowing, or sagging of such wafers due to gravitational forces or from preexisting crystal stress. Intentional or imposed wafer shapes may comprise SiC wafers with a relaxed positive bow from silicon faces thereof. In this manner, effects associated with deformation, bowing, or sagging for SiC wafers, and in particular for large area SiC wafers, may be reduced. Related methods for providing SiC wafers with relaxed positive bow are disclosed that provide reduced kerf losses of bulk crystalline material. Such methods may include laser-assisted separation of SiC wafers from bulk crystalline material.

METHOD AND DEVICE FOR PRODUCING PLANAR MODIFICATIONS IN SOLID BODIES

The present invention relates to a method for creating modifications in a solid state, wherein a crack guidance region for guiding a crack for separating a solid-state portion, in particular a solid-state layer, from the solid state body, is predetermined by the modifications. The method according to the invention preferably comprises the steps: 114612. A method for creating modifications in a solid state () , wherein a crack guidance region () for guiding a crack for separating a solid-state portion () , in particular a solid-state layer from the solid state () is predetermined by the modifications () ,comprising at least the steps:{'b': 1', '8, 'moving the solid state () relative to a laser processing system (),'}{'b': 10', '8', '2', '1, 'successive emission of a plurality of laser beams () by means of the laser processing system () for generating at least one modification () within the solid state (),'}{'b': 8', '10, 'wherein the laser processing system () is adjusted for defined focusing of the laser beams () and/or for adjustment of the laser energy continuously as a function of at least one parameter and preferably as a function of a plurality of parameters, in particular at least two parameters.'}2. The method according to claim 1 ,characterized in that{'b': 1', '1', '1', '10', '2, 'a first parameter is the average refractive index of the material of the solid state () or the refractive index of the material of the solid state () in the region of the solid state () which is to be traversed by laser beams () to create a defined modification () and'}{'b': 1', '10', '2, 'a second parameter is the processing depth in the region of the solid state () which is to be traversed by the laser beams () for creating a defined modification ().'}3. The method according to claim 2 ,characterized in thatthe first parameter is determined by means of a refractive index determination means, in particular by means of spectral reflection, and/orthe second parameter is determined ...

PEELING APPARATUS

There is provided a peeling apparatus including an ingot holding unit that has a holding surface for holding an ingot, a wafer holding unit that is capable of approaching and separating from the ingot holding unit and has a holding surface for holding under suction a wafer to be produced, and a cleaning brush that cleans peel-off surfaces at which the wafer to be produced has been peeled off from the ingot and thereby removes peeling swarf. 1. A peeling apparatus for peeling off , from an ingot in which a peel-off layer is formed , a wafer to be produced , by positioning a focused spot of a laser beam with a wavelength transmittable through the ingot to a depth corresponding to a thickness of the wafer to be produced , from an end surface of the ingot , and applying the laser beam to the ingot , the peeling apparatus comprising:an ingot holding unit that has a holding surface for holding the ingot;a wafer holding unit that is capable of approaching and separating from the ingot holding unit and has a holding surface for holding under suction the wafer to be produced; anda cleaning brush that cleans peel-off surfaces at which the wafer to be produced has been peeled off from the ingot and thereby removes peeling swarf.2. The peeling apparatus according to claim 1 , whereinthe cleaning brush is rotatable about an axis perpendicular to the holding surface of the wafer holding unit and the holding surface of the ingot holding unit, andat least one of a peel-off surface of the wafer held by the wafer holding unit or a peel-off surface of the ingot held by the ingot holding unit is cleaned by the cleaning brush being caused to come into contact with the one of the peel-off surfaces in a state in which the cleaning brush is rotated about the axis.3. The peeling apparatus according to claim 1 , wherein a first cleaning brush that faces the holding surface of the wafer holding unit and cleans a peel-off surface of the wafer that has been peeled off from the ingot, and', 'a ...

DEVICE FOR CUTTING LAYER OF SUBSTRATE, AND ASSOCIATED METHOD

Method for scribing of brittle material and device for scribing

FIELD: technological processes. SUBSTANCE: method for scribing of brittle material includes radiation with pair of beam spots on every side of central line, along which material has to be separated, so that material is heated up to the temperature, which is below softening point. Then material is locally cooled along line of material separation, therefore, vertical crack is deepened and moved along line of mentioned material separation, starting from initial crack formed on mentioned material. Pair of beam spots is radiated with laser beam having distribution of radiation energy, which is normal distribution, and this distribution of radiation energy has two peak sections accordingly along two sections of long side, which are located at the distance from each other along width W with central line of material separation, and with zero radiation energy between these two peak sections. EFFECT: provision of high quality and strength on separated surface of substrate. 19 cl, 25 dwg РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 2 354 616 (13) C2 (51) МПК C03B 33/09 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (21), (22) Заявка: 2007116167/03, 30.09.2005 (24) Дата начала отсчета срока действия патента: 30.09.2005 (73) Патентообладатель(и): МИЦУБОСИ ДАЙМОНД ИНДАСТРИАЛ КО., ЛТД. (JP) (43) Дата публикации заявки: 10.11.2008 2 3 5 4 6 1 6 (45) Опубликовано: 10.05.2009 Бюл. № 13 (56) Список документов, цитированных в отчете о поиске: WO 96/20062 A1, 04.07.1996. RU 2206526 C2, 20.06.2003. RU 2206527 C2, 20.06.2003. RU 2206528 C2, 20.06.2003. МАЧУЛКА Г.А. Лазерная обработка стекла. - М.: Советское радио, 1979, (III), 26-67. 2 3 5 4 6 1 6 R U (86) Заявка PCT: JP 2005/018171 (30.09.2005) C 2 C 2 (85) Дата перевода заявки PCT на национальную фазу: 02.05.2007 (87) Публикация PCT: WO 2006/038565 (13.04.2006) Адрес для переписки: 129090, Москва, ул. Б.Спасская, 25, стр.3, ООО "Юридическая фирма Городисский и Партнеры ...

激光加工方法及半导体芯片

本发明提供一种激光加工方法，即使在形成有包括多个功能元件的叠层部的基板较厚的情况下，也可高精度地切断基板及叠层部。是通过将背面(21)作为激光射入面，使聚光点(P)对准于基板(4)的内部并照射激光(L)，在基板(4)的内部形成改质区域(71、72、73)。此时，在基板(4)的表面(3)及质量改质区域(71)的表面侧端部的距离为5μm～15μm的位置上，形成质量改质区域(71)。在上述位置形成质量改质区域(71)时，可使形成在基板(4)的表面(3)上的叠层部(16)(在此，为层间绝缘膜(17a、17b))与基板(4)一起沿着预定切断线精度良好地被切断。

Method of severing glass

This invention relates to a non-contact thermal-score, mechanical snap method and apparatus for reliably cutting glass yielding pieces of glass having a high edge strength. A delineated infrared source is positioned at one focus of an elliptical reflector means, thereby causing its energy to be concentrated at a focus locus that is caused to coincide with one surface of the piece of glass to be cut along an intended line of fracture, creating a thermal score or heat path. The piece of glass is then severed by applying a bending moment around the heat path.

Scribing method, scribing apparatus, and scribed substrate scribed by the method or apparatus

Enabled is to form a scribing line for obtaining a laser-split substrate, in an object substrate with a relatively low carbide tool pushing force or laser energy. Provided is a scribing method for forming a scribing line (S) along a splitting line (J) of a substrate (K) to be split, before a splitting step of splitting the substrate (K). In this scribing method, a first laser beam (L1) is relatively moved at first along the splitting line (J) of the substrate (K), to form an internal modified layer (N) along the splitting line (J) of the substrate (K), in the substrate (K), and then the scribing line (S) along the splitting line (J) of the substrate (K), in the surface of the substrate (K). Prior to the formation of the scribing line (S), the internal modified layer (N) is formed in advance in the substrate (K) with the first laser beam (L1), so that the scribing line (S) more sufficiently deeper for splitting the substrate (K) than that of the case of no internal modified layer (N) can be formed with a lower energy.

Wheel unit

本发明提供一种即便通过刀轮的旋转而使刀销一同旋转，刀销也不易脱落的构成的轮单元。一种轮单元(10B)，其包括：保持具(11)，在一端具有由切口部形成的一对腿部；刀销(17)，安装在一对腿部间；及刀轮(16)，旋动自由地安装在刀销(17)上；且刀销(17)插入形成在一对腿部的一者上之贯通孔(15)及形成在另一者上之销支承部(31)之间，刀销(17)的贯通孔(15)侧的端部抵接有抵接板(19)，抵接板(19)由通过使贯通孔(15)的外部侧的壁在多个部位上敛合而形成的爪部(30)固定。

Laser working apparatus, and laser working method

금속분이 발생하는 문제나 냉각 부재에 부착된 오물이 기판에 부착되는 문제가 없고, 마찰에 의한 흠집의 발생도 생기지 않는 고체 접촉에 의한 냉각 방법을 이용한 레이저 가공 방법 및 레이저 가공 장치를 제공한다. 빔 스폿을 취성 재료 기판에 형성하는 레이저 조사 기구와, 냉각 영역을 형성하는 기판 냉각 기구와, 빔 스폿 및, 상기 냉각 영역을, 기판에 설정한 가공 예정 라인을 따라 빔 스폿, 냉각 영역의 순으로 상대적으로 이동하는 주사(走査) 기구를 구비하여, 기판 냉각 기구는, 상온에서 기체 또는 액체가 되는 냉매 재료를 냉각하여 고체화한 고상 냉매와, 고상 냉매를 기판에 접촉시키는 압압 기구(push mechanism)로 이루어진다. Provided are a laser processing method and a laser processing apparatus using a cooling method by solid contact, in which there is no problem that metal powder is generated or dirt attached to the cooling member is adhered to the substrate, and scratches are not generated due to friction. A laser irradiation mechanism for forming a beam spot on a brittle material substrate, a substrate cooling mechanism for forming a cooling area, a beam spot, and the cooling area in order of a beam spot and a cooling area along a machining schedule line set on the substrate. The substrate cooling mechanism is provided with a relatively moving scanning mechanism. The substrate cooling mechanism includes a solid refrigerant that solidifies by cooling a refrigerant material that becomes a gas or a liquid at normal temperature, and a push mechanism that contacts the substrate with the solid refrigerant. Is done.

Wafer generation method

Method and apparatus for cutting and separating die from wafer

본 발명은 웨이퍼를 개개의 소자로 절단하는 장치 및 그 사용 방법에 관한 것이다, 앤빌(100)은 웨이퍼(300)가 장착된 유연성 막에 대하여 가압된다. 애빌(100)에는 진공이 가해지므로 유연성 막 및 웨이퍼(300)가 앤빌(100)면에 대하여 가압되게 된다. 유연성 막이 앤빌(100)에 대하여 변형될 때 웨이퍼(300)가 개개의 소자로 절단된다. 웨이퍼(300)가 절단될 때 발생되는 다이싱 조각이 베이스 구조물(408)로 떨어지게 되어 있어서 이들 조각들이 소자와 접촉하지 않고 상기 소자에 손상을 주지 않는다.

Substrate layer cutting device and method

本发明涉及一种用于自动高精度切割一种材料层的设备(50)，该材料层通过脆化区域而结合在源基片上，该源基片和被切割材料层形成被切割工件，所述设备包括切割装置(531，532)和用于保持被切割工件的位置的装置(510)，其特征在于，所述切割装置包括一个刀片，其用于作用在被切割工件上。本发明还涉及用于使用该设备的方法。

Method for producing gallium nitride substrate

Dividing device and dividing method

Laser beam machining method

【課題】 シリコンウェハを切断して得られるチップの切断面からパーティクルが発生するのを防止するためのレーザ加工方法を提供する。 【解決手段】 改質領域７ ７ 〜７ １２ を形成する際のレーザ光Ｌの照射条件は、シリコンウェハ１１の表面３からの深さが３３５μｍ〜５２５μｍの領域でのレーザ光Ｌの球面収差が補正されるように、改質領域７ １３ 〜７ １９ を形成する際のレーザ光Ｌの照射条件に対して変化させられる。そのため、改質領域７ １ 〜７ １９ を切断の起点としてシリコンウェハ１１及び機能素子層１６を半導体チップに切断しても、深さが３３５μｍ〜５２５μｍの領域ではツイストハックルが顕著に現れず、パーティクルが発生し難くなる。 【選択図】 図１１

The main cooling spray of cutter and cutter cooling device, scribing machine

本发明涉及机械加工技术领域，具体涉及一种刀具主冷却喷头及刀具冷却装置、划片机。刀具主冷却喷头包括固定部分；转动部分，包括用于从刀片前侧正对刀片喷吹冷却介质的主喷管；转动部分绕沿刀片轴向延伸的轴线转动安装在固定部分上，以使主喷管的对着刀片的一端可朝向和背向刀片摆动；挡止结构，限制主喷管的对着刀片的一端背向刀片摆动的幅度，以防止主喷管的对着刀片的一端碰撞待加工件。挡止结构的存在能够限制主喷管的对着刀片的一端背向刀片摆动的幅度，避免主喷管的对着刀片的一端摆动过位，从而碰撞待加工件，造成待加工件损坏。

Method and apparatus for breaking brittle material substrate

本发明涉及一种脆性材料基板的断开方法以及断开装置，将脆性材料基板保持于切割环，防止承载在工作台上时基板的弯曲。在粘贴于切割环(31)的粘着带(32)上保持蓝宝石基板(30)。在断开装置的玻璃工作台(12)上设置弹性支承板(40)，在其上方固定切割环(31)。通过使辊(22)对蓝宝石基板(30)推压并使其相对移动，使蓝宝石基板(30)紧贴在弹性支承板(40)上。接着，用监视摄像机识别划线，从划线的正上方使断开杆下降，分离脆性材料基板。

Vertical crack forming method and vertical crack forming device in substrate.

Se proveen un metodo para formar una grieta media y un aparato para formar una grieta media, con los cuales es posible la formacion de una grieta media recta y profunda, y como resultado de la ruptura puede obtenerse una excelente superficie dividida en un sustrato fragil. En el metodo para formar una grieta mediana en un sustrato fragil ese sustrato fragil se radia con un ayo laser a lo largo de una linea de referencia para el laser que va a formarse con grietas medias sobre la superficie fragil para ser calentada a una temperatura que no es mayor a la temperatura de fusion, y asi se crea la grieta media a lo largo de la linea de referencia que se va a formar con las grietas medias y se expande a partir de una muesca que ha sido formada en el sustrato fragil, y este metodo para formar una grieta media en un sustrato fragil esta caracterizado porque alternativamente a lo largo de la linea de referencia para el laser que debe tomarse con las grietas medias, se forman porciones a alta temperatura que reciben la intensa radiacion del rayo laser, y porciones a baja temperatura que reciben la radiacion debil del rayo laser.

Patent FR2516848B1

DEVICE FOR CUTTING LAYER OF SUBSTRATE, AND ASSOCIATED METHOD

DEVICE FOR SEPARATING A STACKED STRUCTURE AND ASSOCIATED METHOD

Device and method for automatic cutting of a layer of a substrate, comprises a holder and cutting means including a cleaving plate and two side plates mounted symmetrically

The device (50) is for high-precision automatic cutting of a layer of material which is monolithic with a source substrate by the intermediary of a fragility zone so that the source substrate and the layer form a set such as a circular wafer (20). The device comprises cutting means which include the main plate (530) for attacking the wafer on side wall and two side plates (531,532) for attacking tangentially, and holding means which include a holder for maintaining the wafer in position. The plates are carried by respective displacement elements (520,521,522), which ensure controlled translatory motions. The holder, which is in the form of a single piece or a set, is stationary, and the plates are mobile. The device comprises a sensor for the acquisition of a parameter representative of cleavage by the first plate (530), and means for activating the side plates (531,532) when the parameter attains a predetermined value. The parameter is related to a measure of spacing between parts of wafer. The method for high-precision automatic cutting includes the positioning of the wafer with respect to the holder, and cutting the layer which is effected by the plate associated with the displacement elements. The first phase of cutting is carried out by the first plate (530), and the second phase is started according to the value of parameter and is carried out by the side plates (531,532).

Method and device for planar creation of modifications in solid states

The present invention relates to a method for creating modifications in a solid body, wherein by means of the modifications a crack guiding region is provided for guiding a crack in order to detach a solid body portion, in particular a solid body layer, from the solid body. The method according to the invention comprises preferably at least the steps of: moving the solid body relative to a laser application device; successively producing a plurality of laser beams by means of the laser application device in order to create a respective at least one modification, wherein the laser application device is adjusted for defined focusing of the laser beams, continuously depending on a plurality of parameters, in particular at least two parameters.

METHOD AND MACHINE FOR SUBDIVIDING A CERAMIC PLATEŸA

L'OBJET DE L'INVENTION EST DE PROCURER UN PROCEDE ET UN APPAREIL POUR CASSER LES SUBSTRATS DE CERAMIQUE QUE L'ON UTILISE DANS L'INDUSTRIE DES CIRCUITS ELECTRONIQUES DITS HYBRIDES. SELON LES PROCEDES HABITUELLEMENT UTILISES, ON APPLIQUE UNE FORCE ELASTIQUE QUI EST DIFFICILE A CONTROLER. SELON L'INVENTION, ON IMPOSE DE FACON RIGIDE UNE DEFORMATION PREDETERMINEE AU SUBSTRAT 4 QUE L'ON VEUT SUBDIVISER PAR CASSE AU MOYEN DE DEUX MATRICES 6, 7 RIGIDES, DE SECTION CIRCULAIRE, DONT LE RAYON EST DIFFERENT POUR CHAQUE MATRICE, ET DONT LES CENTRES DE COURBURE 24, 25 SONT CONFONDUS LORSQUE L'APPAREIL EST DANS SA POSITION FINALE. THE OBJECT OF THE INVENTION IS TO PROVIDE A PROCESS AND AN APPARATUS FOR BREAKING THE CERAMIC SUBSTRATES USED IN THE INDUSTRY OF SO-CALLED HYBRID ELECTRONIC CIRCUITS. ACCORDING TO THE METHODS USUALLY USED, AN ELASTIC FORCE IS APPLIED WHICH IS DIFFICULT TO CONTROL. ACCORDING TO THE INVENTION, A PREDETERMINED DEFORMATION IS RIGIDLY IMPOSED ON SUBSTRATE 4 WHICH WE WANT TO SUBDIVIDATE BY BREAK BY MEANS OF TWO 6, 7 RIGID DIES, OF CIRCULAR SECTION, WHOSE RADIUS IS DIFFERENT FOR EACH MATRIX, AND WHOSE CENTERS OF CURVATURE 24, 25 ARE CONFUSED WHEN THE UNIT IS IN ITS END POSITION.

Substrate-layer cutting device and method associated therewith

본 발명은, 소스 기판에 결합된 재료의 층을 취화 영역에 의해서 자동으로 고 정밀 절단하는 장치(400)에서, 이 소스 기판과 층이 절단되는 조립체를 형성하고 상기 장치가 절단되는 조립체의 위치를 유지하는 수단(510) 이외에 절단 수단(531, 532)을 포함하는 것으로, 절단 수단은 절단되는 조립체에 작용하는 블레이드를 포함하는 것을 특징으로 한다. 또한 본 발명은 상기 장치를 사용하는 방법에 관한 것이다. The present invention is directed to an apparatus 400 for automatically and precisely cutting a layer of material bonded to a source substrate by an embrittlement region, thereby forming an assembly in which the layer is cut with the source substrate and positioning the assembly in which the apparatus is cut. It comprises cutting means 531, 532 in addition to the holding means 510, characterized in that the cutting means comprises a blade acting on the assembly being cut. The invention also relates to a method of using the device.

DEVICE FOR CUTTING AND LAYING A SUBSTRATE, AND ASSOCIATED METHOD

Splitting apparatus

METHOD AND DEVICE FOR LABELING AND DIVIDING WAFERS OF SINGLE-CRYSTAL SEMICONDUCTOR MATERIALS

Selon l'invention, pour marquer une direction de référence sur une plaquette d'un matériau semi-conducteur monocristallin de faible dureté, on forme une empreinte 1 sur la face utile de la plaquette et dans une zone non utile de cette face, l'empreinte mettant en évidence au moins une direction dont on déduit la direction de référence 9, 11, 13, et on marque cette dernière par un trait sur la zone non utile. La direction de référence correspondant à un plan de clivage de la plaquette, on peut en outre cliver celle-ci en traçant un trait de clivage suivant la direction de référence sur l'autre face de la plaquette. According to the invention, to mark a reference direction on a wafer of a monocrystalline semiconductor material of low hardness, an imprint 1 is formed on the useful face of the wafer and in a non-useful zone of this face, the imprint highlighting at least one direction from which the reference direction 9, 11, 13 is deduced, and the latter is marked by a line on the non-useful zone. Since the reference direction corresponds to a cleavage plane of the wafer, it is also possible to cleave the latter by drawing a cleavage line along the reference direction on the other face of the wafer.

Dividing method of resin-attached brittle material substrate

V자 형상 홈부가 형성된 수지 부착 취성 재료 기판을 높은 확실성으로 분할 방법을 제공한다. 취성 재료 기판의 일 주면에 수지가 부착되어 이루어지는 동시에, 취성 재료 기판의 타 주면에 V자 형상 홈부가 형성된 수지 부착 취성 재료 기판을, V자 형상 홈부의 선단부를 기점으로 하여 주면에 수직으로 분할하는 방법이, 수지 부착 취성 재료 기판의 수지측의 분할 예정 위치에 제2 홈부를 형성하는 홈부 형성 공정과, V자 형상 홈부를 따라서 상기 수지 부착 취성 재료 기판을 분할하는 브레이크 공정(예를 들어, 취성 재료 기판의 주면 상이며 V자 형상 홈부에 대하여 대칭인 2개의 위치와, 수지측의 주면이며 V자 형상 홈부의 선단부의 연장선 상의 위치에 대해, 소정의 압박 부재로 압박함으로써, 수지 부착 취성 재료 기판을 분할하는 브레이크 공정)을 구비한다. Provided is a method for dividing a brittle material substrate with resin having a V-shaped groove portion with high reliability. The resin is attached to one main surface of the brittle material substrate, and the brittle material substrate with resin having a V-shaped groove portion formed on the other main surface of the brittle material substrate is divided vertically on the main surface with the tip of the V-shaped groove portion as a starting point. The method includes a groove portion forming step of forming a second groove portion at a predetermined scheduled position on the resin side of the brittle material substrate with resin, and a brake step of dividing the brittle material substrate with resin along the V-shaped groove portion (eg, brittleness). The brittle material substrate with resin is pressed by two predetermined positions on the main surface of the material substrate and symmetrical with respect to the V-shaped groove portion and the position on the extension side of the tip of the V-shaped groove portion on the resin side. And a brake step of dividing).

Laser processing method and semiconductor chip

A laser processing method is provided for highly accurately cutting a board and a stacked part, even when the board whereupon the stacked part including a plurality of functional elements is formed is thick. In the laser processing method, a laser beam L is projected, having a rear plane (21) as a laser beam incidence plane, with a light collecting point P inside of a board (4), and modified areas (71, 72, 73) are formed inside the board (4). At this time, the quality modified area (71) is formed at a position which permits a distance between a surface (3) of the board (4) and a surface side edge part of the quality modified part (71) to be 5μm-15μm. When the quality modified area (71) is formed at such position, a stacked part (16) (in this case, interlayer insulating films (17a, 17b) formed on the surface (3) of the board (4) can be accurately cut along a cut planned line with the board (4).

Method for processing silicon carbide wafers with relaxed positive curvature

公开了碳化硅(SiC)晶片(8A)和相关方法，其包括配置以减少与由于重力或先前存在的结晶应力所造成的这些晶片(8A)的变形、弯曲或下垂有关的生产问题的故意或强加的晶片(8A)形状。故意或强加的晶片(8A)形状可以包括具有相对于其硅面的松弛正弯的SiC晶片(8A)。以这种方式，可以降低与SiC晶片(8A)，并且具体地大面积SiC晶片(8A)的变形、弯曲或下垂有关的影响。公开了用于提供具有松弛正弯的SiC晶片(8A)的相关方法，所述方法提供了减小的块状晶体材料(70、90、92A、92)的切割损失。这些方法可以包括SiC(6H)晶片(8A)与块状晶体材料(70、90、92A、92)的激光辅助分离。

Lamination ceramic substrate breaking method and groove processing tool

本发明是有关于一种金属积层陶瓷基板的分断方法及沟槽加工用工具，用于将在陶瓷基板积层有金属膜的积层陶瓷基板分断。该分断方法包括：对积层陶瓷基板(10)的金属膜(12)使用图案化工具沿着刻划预定线进行沟槽加工；自陶瓷基板(11)的面或自金属膜(12)侧的沟槽(12a)，借由刻划装置于陶瓷基板(11)形成划线；自陶瓷基板(11)侧的面沿着划线进行折断。借由此方法，可将积层陶瓷基板(10)完全分断。

Jaw cleaving device

An apparatus and method for cleaving GaAs laser bars from a cell utilizes a first jaw applied to one end of a laser bar to propagate a cleavage and a second jaw applied to an opposite end which provides a biasing force that assures separation of the bar from the cell along the same crystallographic plane. The apparatus may be used in an ultra-high vacuum environment and allows handling of the bars without contacting the vital areas of the top surfaces or facet faces. The apparatus precisely locates bars after cleavage so that they may be further processed.

Process for the production of permanent magnets with matching crystal orientation and magnetization direction and permanent magnets produced afterwards

Segmentation method

Method and device for finely dividing ceramic board into piece

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Semiconductor wafer and a method of separating the same

A semiconductor wafer includes a plurality of predetermined separation lines extending from an upper surface to a bottom surface; and a semiconductor substrate including a plurality of chip regions segmented by the predetermined separation lines. Tensile stress is applied to regions of the semiconductor substrate provided with the predetermined separation lines.

Device and method for cutting an assembly

A method is presented for cutting an assembly that includes two layers of material having a first surface and a second surface. The method includes providing a weakened interface between the two layers that defines an interface ring about the periphery of the assembly, providing a high-pressure zone at the interface ring, and providing at least one controllable low-pressure zone in the vicinity of at least one of the first surface and the second surface. The technique also includes supplying the high-pressure zone with a controllable high-pressure force, and attacking the interface ring with at least one mechanical force in combination with the high-pressure force to cut the assembly.

Wafer processing method

提供一種當將至少一方的分割預定線被形成 為非連續的晶圓進行雷射加工時，抑制在一方分割預定線的端部在另一方分割預定線形成為T字路而抵碰的交點附近已形成的改質層被照射雷射束，可防止雷射束在改質層的反射或散射，且防止因漏光所造成的元件損傷之晶圓之加工方法。 將正交形成的第1分割預定線與第2分 割預定線之中至少第2分割預定線被形成為非連續的晶圓分割成各個元件晶片之晶圓之加工方法，其係包含：第1方向改質層形成步驟，其係沿著第1分割預定線，在晶圓的內部形成第1方向改質層；及第2方向改質層形成步驟，其係沿著第2分割預定線，在晶圓的內部形成第2方向改質層。第2方向改質層形成步驟係包含在形成有第1方向改質層的第1分割預定線形成為T字路而相交的第2分割預定線的內部形成第2方向改質層的T字路加工步驟。T字路加工步驟係複數層的第2方向改質層的端部由 下層遍及上層而朝向先形成的第1方向改質層形成為倒階梯狀。

MACHINE FOR GROOVING PLATES.

Method and equipment for cutting and scratching sic board

刻划设备包括：水平工作台(3)，碳化硅板(2)在真空抽吸作用下固定在该水平工作台(3)上；进给螺纹(5)和Y轴控制电动机(6)，该进给螺纹(5)和Y轴控制电动机(6)用于使水平工作台(3)在刻划数字控制下沿着成对引导轨道(4、4)移动；引导轨道装置本体(7)，该引导轨道装置本体(7)沿着X轴方向安装在水平工作台(3)上方；支架(8)，该支架(8)安装在引导轨道装置本体(7)上，以便在被引导的同时沿X轴方向移动；进给螺纹和X轴控制电动机(9)，该进给螺纹和X轴控制电动机(9)用于使支架(8)在数字控制下沿X轴方向移动；以及刻划头部(10)，该刻划头部(10)安装在支架(8)上。

Method of scribing laminated substrate

本发明提供一种贴合基板的切割方法，所述切割方法可对由密封材料贴合的基板两侧的基板面进行稳定的切割加工。此贴合基板的切割方法包括进行如下工序：(a)对于第一基板，形成各产品第一基板侧的分割所用的划线；(b)对于第二基板，在相邻产品之间的边角材料区域中间附近，和各产品第二基板侧的分割所用的划线不同地另外形成应力释放用划线；(c)对于第二基板，形成各产品第二基板侧的分割所用的划线；进而对于第一基板进行如下工序：在(a)工序前或(a)工序后、或者(b)工序后的任一情况下，在相邻产品之间的边角材料区域的中间附近，和第一基板侧的分割所用的划线不同地另外形成应力释放用划线。

Semiconductor substrate cutting method

표면에 기능 소자가 형성된 반도체 기판을 다이 본드 수지층과 함께 양호한 효율로 절단할 수 있는 반도체 기판의 절단 방법을 제공한다. Provided are a method for cutting a semiconductor substrate, which can cut a semiconductor substrate having functional elements formed on its surface with a die bond resin layer with good efficiency. 표면(3)에 기능 소자(15)가 형성된 웨이퍼(11)의 이면(17)을 레이저광 입사면으로 하고, 웨이퍼(11)의 내부에 집광점 P를 맞추어서 레이저광 L을 조사함으로써, 다광자 흡수를 일으키게 하여 절단 예정 라인(5)을 따라서 웨이퍼(11)의 내부에 용융 처리 영역(13)에 의한 절단 기점 영역(8)을 형성한다. 이로 인해 자연스럽게 또는 비교적 작은 힘으로 절단 기점 영역(8)을 기점으로 하여 분열을 발생시키고, 그 분열을 표면(3)과 이면(17)에 도달시킬 수 있다. 따라서, 절단 기점 영역(8)을 형성한 후에, 웨이퍼(11)의 이면(17)에 다이 본드 수지층(23)을 개재시켜서 확장 필름(21)을 첩부하고 그 확장 필름(21)을 확장시키면, 절단 예정 라인(5)을 따라서 웨이퍼(11) 및 다이 본드 수지층(23)을 절단할 수 있다. Multi-photon by irradiating the laser beam L by making the back surface 17 of the wafer 11 in which the functional element 15 was formed in the surface 3 as a laser beam incidence surface, aligning the condensing point P in the inside of the wafer 11, and Absorption is caused to form the starting point region 8 by the molten processing region 13 in the wafer 11 along the cutting scheduled line 5. As a result, it is possible to generate a break from the cutting origin region 8 as a starting point with a natural or relatively small force, and to reach the front surface 3 and the back surface 17. Therefore, after forming the starting point region 8 for cutting, the expanded film 21 is affixed through the die bond resin layer 23 on the back surface 17 of the wafer 11 and the expanded film 21 is expanded. The wafer 11 and the die bond resin layer 23 can be cut along the cutting schedule line 5.

Brittle base plate disjoining method

In this invention, a trench line (TL) is formed over a glass base plate (4) by rolling a scribing wheel (51) while applying a load (F). The scribing wheel (51) progresses towards a progression direction (DP), which is identical to the direction of an in-plane component (Fi) of the load (F). The step of forming the trench line (TL) is performed in such a manner as to obtain a crackless state. A crack of the glass base plate (4) in a thickness direction (DT) is caused to extend towards the progression direction along the trench line (TL), thereby forming a crack line (CL). In the glass base plate (4), in a direction that intersects with the trench line (TL), a continuous connection immediately below the trench line (TL) is disrupted by the crack line (CL). The glass base plate (4) becomes disjoined along the crack line (CL).

Semiconductor substrate cutting method and method of manufacturing a semiconductor device

A semiconductor substrate cutting method which can efficiently cut a semiconductor substrate having a front face formed with a functional device together with a die bonding resin layer is provided. A wafer 11 having a front face 3 formed with a functional device 15 is irradiated with laser light L while positioning a light-converging point P within the wafer 11 with the rear face 17 of the wafer 11 acting as a laser light incident face, so as to generate multiphoton absorption, thereby forming a starting point region for cutting 8 due to a molten processed region 13 within the wafer 11 along a line along which the substrate should be cut 5. Consequently, a fracture can be generated from the starting point region for cutting 8 naturally or with a relatively small force, so as to reach the front face 3 and rear face 17. Therefore, when an expansion film 21 is attached to the rear face 17 of the wafer 11 by way of a die bonding resin layer 23 after forming the starting point region for cutting 8 and then expanded, the wafer 11 and die bonding resin layer 23 can be cut along the line along which the substrate should be cut 5.

Device and method for applying pressure to stress-producing layers for improved guidance of a separation crack

The present invention relates to a method, according to claim 1, for separating at least one solid body layer (1), particularly a solid body disk, from a donor substrate (2). The method according to the invention comprises preferably at least the following steps: providing a donor substrate (2); producing or arranging a stress-producing layer (4) on a particularly flat surface (5) of the donor substrate (2) which axially defines the donor substrate (2); pressing at least one pressure application element (6) of a pressure application device (8) onto at least one pre-determined portion of the stress-producing layer (4), in order to press the stress-producing layer (4) onto the surface (5); separating the solid body layer (1) from the donor substrate (2) by thermally applying the stress-producing layer (4), thereby producing mechanical stress in the donor substrate (2), the mechanical stress creating a crack for separating a solid body layer (1), and the pressure application element (6) being pressed onto the stress-producing layer (4) during the thermal application of the stress-producing layer (4).

Method of forming a scribe line on a ceramic substrate

A method of forming a scribe line having a sharp snap line entails directing a UV laser beam along a ceramic substrate such that a portion of the thickness of the ceramic substrate is removed. The UV laser beam forms a scribe line in the ceramic substrate in the absence of appreciable ceramic substrate melting so that a clearly defined snap line forms a region of high stress concentration extending into the thickness of the ceramic substrate. Consequently, multiple depthwise fractures propagate into the thickness of the ceramic substrate in the region of high stress concentration in response to a breakage force applied to either side of the scribe line to effect clean breakage of the ceramic substrate into separate circuit components. The formation of this region facilitates higher precision breakage of the ceramic substrate while maintaining the integrity of the interior structure of each component during and after application of the breakage force.

Method and apparatus for cleaving a substrate

A cleaving apparatus (600) impacts the perimeter of a substrate and then provides pressurized gas to the vicinity of the impact to cleave a substrate at a selected plane. The selected plane may be a weakened layer (18) in a donor wafer (12) in a thin film transfer process, for example. The substrate may be a composite substrate composed of flush-edged wafers (42, 46), or may be composed of one or more finished-edge wafers (12, 14). The combination of mechanical force and gas pressure separates the substrate into two halves at a selected interface, or along a selected plane.

Patent FR1566090A

Substrate layer cutting device and method

An automatic high-precision layer cutting device for separating a layer from a semiconductor substrate. The cutting device includes a fixed positioning member for receiving at least a portion of a semiconductor substrate that has a weakened area therein and a peripheral annular notch that is located below the weakened area. The positioning member maintains a predetermined position of the substrate on a support. The device also includes cutting means having at least one blade for contacting the substrate and for inducing a cleaving wave into the substrate. The cutting means is operatively associated with the positioning member so that the at least one blade contacts the annular notch and the positioning member prevents movement of the substrate. The at least one blade induces a cleaving wave of sufficient intensity to both divide the substrate at the notch into first and second parts and detach the layer from the substrate along the weakened area.

Integrated circuit processing

DEVICE FOR CUTTING A LAYER OF A SUBSTRATE, AND ASSOCIATED METHOD

L'invention concerne un procédé de coupe de deux couches de matériau (10a, 10b) formant un ensemble à couper (10), comprenant :. la création entre les deux couches d'une interface de fragilisation (11), définissant une couronne d'interface,. la formation d'une première région (21) dite de haute pression,. la formation d'au moins une deuxième région (22a, 22b) dite de basse pression,. l'alimentation de la région de haute pression avec un fluide dont la pression est contrôléecaractérisé en ce que :. la création d'une interface de fragilisation peut être réalisée par tout type de procédé connu en soi et adapté à cet effet, et n'est ainsi pas limitée à la création d'une interface de collage, et. en combinaison avec l'alimentation en haute pression on attaque la couronne d'interface de l'ensemble à couper avec au moins une lame (30). L'invention concerne également un dispositif associé. The invention relates to a method of cutting two layers of material (10a, 10b) forming an assembly to be cut (10), comprising:. the creation between the two layers of a weakening interface (11), defining an interface ring ,. the formation of a first region (21) called high pressure ,. the formation of at least one second region (22a, 22b) called low pressure ,. supplying the high pressure region with a fluid whose pressure is controlled, characterized in that:. the creation of an embrittlement interface can be carried out by any type of method known per se and suitable for this purpose, and is thus not limited to the creation of a bonding interface, and. in combination with the high pressure supply, the interface ring of the assembly to be cut is attacked with at least one blade (30). The invention also relates to an associated device.

Method and apparatus for scribing silicon carbide board

탄화 규소판(2)을 진공 흡착 고정하는 수평의 테이블(3)과, 가이드 레일(4, 4)을 따라 테이블(3)을 스크라이브 수치 제어 이동시키는 이송나사(5) 및 Y축 제어 모터(6)와, X축 방향을 따라 테이블(3)의 위쪽에 가설된 가이드 레일 장치체(7)와, 가이드 레일 장치체(7)로 X축 방향으로 가이드되어 이동하도록 장착된 캐리지(8)와, 캐리지(8)를 X축 방향으로 수치 제어 이동시키는 이송나사 및 X축 제어 모터(9)와, 캐리지(8)에 장착된 스크라이브 헤드(10)를 구비한다.

Semiconductor - slice cleaving

Cleavage of a semiconductor slice is initiated at a peck-mark formed in the upper surface at one edge of the slice by bending the slice over a cutting edge of a semiconductor slice dicing wheel. The cleave is propagated to the far edge of the slice by relative sliding movement of the wheel across the underside of the slice.

Method for scribing substrate of brittle material and scriber

A mother glass substrate is continuously heated by a first laser spot LS1 to a temperature which is lower than a softening point of the mother glass substrate, along a scribe line formation line SL on a surface of the mother glass substrate, along which a scribe line is to be formed, while an area close to the first laser spot LS1 is continuously cooled along the scribe line formation line SL; and an area which is close to the cooled area and is on an opposite side to the first laser spot LS1 is continuously heated by a second laser spot LS2 along the scribe line formation line SL to a temperature which is lower than the softening point of the mother glass substrate.

Brittle material rotating and aligning mechanism for use in a brittle material scribing and/or breaking apparatus

A brittle material rotating and aligning mechanism including a bearing, a rotary table, and a driving mechanismU, and installed in the worktable of a brittle material scribing and breaking apparatus; carries brittle material, for example, a semiconductor wafer for scribing and breaking into individual dies. The driving mechanism uses a flexible transmission member to rotate the rotary table for low installation cost, no requirement for a precision adjustment during installation, and, preventing the occurrence of back lash or the production of particles due to friction between the transmission member and the driving wheel of the driving mechanism, or between the transmission member and the rotary table.

Working gemstones

In order to provide a better way of kerfing (i.e. forming a groove) a gemstone 1 such as a diamond, a higher energy, high pulse rate, low order mode, laser beam is employed. Apparatus for working a gemstone can in general comprise a laser 6 which provides a substantially parallel beam, reflecting means 7 which bends the beam incident thereon through a substantial angle and which is moveable substantially parallel to the axis of the incident beam, and a focussing arrangement 8 which focuses the beam. <IMAGE>

Device for cutting a substrate layer, and corresponding method

The invention concerns a device for automatic high-precision cutting of a material layer (20a) which is integral with a source substrate (20b) via a weakened zone (200c), the source substrate and the layer to be cut forming together an assembly to be cut (20), the device comprising cutting means (101, 102) as well as means for retaining (100a, 100b) the assembly to be cut. The invention is characterized in that the retaining means are designed for controlled displacement so as to accompany actively the divergence and/or the deformation of each part of the assembly to be cut, and to rectify said divergence and/or said deformation. The invention also concerns a corresponding automatic cutting method.

Wafer dividing method and apparatus

Semiconductor substrate, semiconductor chip and production method for a semiconductor device