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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 2734. Отображено 100.

19-07-2012 дата публикации

Protective layer against hot gas corrosion in the combustion chamber of an internal combustion engine

Номер: US20120180748A1

Автор: Gunter BÜRKLE

Принадлежит: KS KOLBENSCHMIDT GMBH

A coating for a tribologically heavily loaded component, wherein the coating is in the form of a ceramic coating made of an organic-inorganic prepolymer which is pyrolyzed after being applied to the component.

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Номер записи: 1

11-04-2013 дата публикации

CHIRAL NEMATIC NANOCRYSTALLINE METAL OXIDES

Номер: US20130089492A1

Автор: Hamad Wadood Yasser, MacLachlan Mark John, Shopsowitz Kevin Eric

Принадлежит:

A mesoporous metal oxide materials with a chiral organization; and a method for producing it, in the method a polymerizable metal oxide precursor is condensed inside the pores of chiral nematic mesoporous silica by the so-called “hard templating” method. As a specific example, mesoporous titanium dioxide is formed inside of a chiral nematic silica film templated by nanocrystalline cellulose (NCC). After removing the silica template such as by dissolving the silica in concentrated aqueous base, the resulting product is a mesoporous titania with a high surface area. These mesoporous metal oxide materials with high surface area and chiral nematic structures that lead to photonic properties may be useful for photonic applications as well as enantioselective catalysis, photocatalysis, photovoltaics, UV filters, batteries, and sensors. 1. A mesoporous metal oxide having chirality and crystallinity.2. The mesoporous metal oxide of claim 1 , wherein said oxide is titanium oxide.3. The mesoporous metal oxide of claim 2 , wherein said titanium oxide is anatase titanium oxide.4. The mesoporous metal oxide of claim 1 , wherein said chirality is in a length scale ranging from nanometers to centimetres.5. The mesoporous metal oxide of claim 2 , wherein said chirality is in a length scale ranging from nanometers to centimetres.6. A process for producing a mesoporous metal oxide having chirality claim 2 , comprising: introducing a metal oxide precursor into a mesoporous silica template defining chirality claim 2 , converting said precursor to metal oxide claim 2 , and removing said silica template.7. A process according to claim 6 , wherein said precursor is a precursor of a metal oxide selected from the group consisting of titanium oxide claim 6 , tin dioxide claim 6 , iron oxide claim 6 , tantalum oxide and vanadium oxide.8. A process according to claim 6 , wherein said precursor is a precursor of titanium oxide.9. A process according to claim 6 , wherein said precursor is a ...

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Номер записи: 2

16-05-2013 дата публикации

Indium tin oxide powder, production method therefor, transparent conductive composition, and indium tin hydroxide

Номер: US20130122305A1

Автор: Megumi Narumi, Shinya Shiraishi

Принадлежит: Mitsubishi Materials Corp, Mitsubishi Materials Electronic Chemicals Co Ltd

One aspect of an indium tin oxide powder has a specific surface area of 55 m 2 /g or more, wherein a color tone is from bright yellow to a color of persimmons or a half-width in the peak of (222) plane is 0.6° or less on an X-ray diffraction chart. Another aspect of the indium tin oxide powder has a modified surface, wherein a specific surface area is 40 m 2 /g or more, a half-width in the peak of (222) plane is 0.6° or less on an X-ray diffraction chart, and a color tone is navy blue (L is 30 or less in a Lab colorimetric system). A method for producing the indium tin oxide powder includes: coprecipitating an indium tin hydroxide by using a tin (Sn 2+ ) compound under conditions in which pH is 4.0 to 9.3, and a temperature of a liquid is 5° C. or higher; and drying and calcining the indium tin hydroxide.

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Номер записи: 3

23-05-2013 дата публикации

Zinc oxide anti-reflection layer having a syringe-like structure and method for fabricating the same

Номер: US20130129974A1

Автор: Jr-Hau He, Kun-Ping Huang, Kun-Yu Lai, Li Ko Yeh

Принадлежит: Industrial Technology Research Institute ITRI

The disclosure provides a zinc oxide anti-reflection layer having a syringe-like structure and method for fabricating the same. The zinc oxide anti-reflection layer includes: a zinc oxide lower portion, wherein the zinc oxide lower portion has a nanorod array structure; and a zinc oxide upper portion connected to the zinc oxide lower portion, wherein the zinc oxide anti-reflection layer has a syringe-like structure.

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Номер записи: 4

06-06-2013 дата публикации

SEMICONDUCTIVE CERAMIC SINTERED COMPACT

Номер: US20130140508A1

Автор: SHIMADA Shogo, TERAMOTO Atsushi, USHIJIMA Yasutaka

Принадлежит: TOTO LTD.

There is provided a semiconductive ceramic sintered compact that has a conductivity high enough to attain static electricity removal and antistatic purposes and, at the same time, has excellent mechanical properties or stability over time. The semiconductive ceramic sintered compact includes at least a main phase and first and second phases contained in the main phase observed as a result of observation of any face of the sintered compact, the main phase being a ceramic sintered phase containing AlOparticles, the first phase being a grain boundary phase including a conductive substance-containing conductive phase and AlOparticles, the AlOparticles being present in an island-sea form in the conductive phase, the second phase being a grain boundary phase containing a conductive phase having the same composition as the conductive phase in the first phase and having a structure that electrically connects the first phases three-dimensionally to each other. 1. A semiconductive ceramic sintered compact comprising:a main phase and first and second phases contained in the main phase observed as a result of observation of any face of the sintered compact, wherein{'sub': 2', '3, 'the main phase is a ceramic sintered phase comprising AlOparticles,'}{'sub': 2', '3', '2', '3, 'the first phase is a grain boundary phase comprising a conductive substance-containing conductive phase and AlOparticles, and the AlOparticles is present in an island-sea form in the conductive phase, and'}the second phase is a grain boundary phase containing a conductive phase having the same composition as the conductive phase in the first phase and having a structure that electrically connects the first phases three-dimensionally to each other.2. The semiconductive ceramic sintered compact according to claim 1 , wherein the conductive phase contains Fe (iron) and Ti (titanium).3. The semiconductive ceramic sintered compact according to claim 2 , wherein the conductive phase further contains Mn (manganese ...

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Номер записи: 5

13-06-2013 дата публикации

DISCHARGE SURFACE TREATMENT METHOD AND COATING BLOCK FOR DISCHARGE SURFACE TREATMENTS

Номер: US20130146822A1

Автор: Ochiai Hiroyuki, SHIINO Masayoshi, Shimoda Yukihiro, Watanabe Mitsutoshi, Yoshizawa Hiroki

Принадлежит:

Employing a compact molded from powder of metal or the like as an electrode , generating pulsed discharges between the electrode and a treating portion Wa of work W in working oil L as a mixture with powder of semiconductor or conductor mixed therein, using discharge energy thereof for locally fusing surface regions of the treating portion Wa of work W, showering molten pieces of electrode material or reactants of the electrode material onto the treating portion Wa of work W, forming a covering film C on the treating portion Wa of work W. 1. A coating block comprising a sintered compact comprising a powder of ZrOmixed with at least one electrode material selected from the group consisting of a powder of a metal , a powder of a metal compound , a powder of a ceramic , and a powder of a nonconductive particle.2. The coating block of claim 1 , wherein a content of the ZrOpowder is from 3% to 15% by weight to the electrode material.3. The coating block of claim 2 , wherein the content of the ZrOpowder is 10% by weight to the electrode material.4. The coating block of claim 1 , wherein the electrode material is a powder of a metal.5. The coating block of claim 1 , wherein the electrode material is a powder of a metal compound.6. The coating block of claim 1 , wherein the electrode material is a powder of a ceramic.7. The coating block of claim 1 , wherein the electrode material is a powder of a nonconductive particle.8. The coating block of claim 1 , wherein the compact comprises a powder of a chrome-containing cobalt alloy.9. The coating block of claim 1 , wherein a powder particle size of the ZrOpowder is from 5 to 10 μm.10. The coating block of claim 1 , wherein the sintered compact is a sintered green pellet.11. The coating block of claim 1 , wherein the coating block is capable of generating a discharge energy between the coating block and a treating portion of work in a working oil. The present invention relates to a discharge surface treatment method of forming a ...

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Номер записи: 6

27-06-2013 дата публикации

Cobalt-Free NTC Ceramic and Method for Producing a Cobalt-Free NTC Ceramic

Номер: US20130161574A1

Автор: Feltz Adalbert

Принадлежит: EPCOS AG

The invention relates to a cobalt-free NTC ceramic having the composition Ni′Cu′Co′MnOwhere 0.09 Подробнее

Номер записи: 7

17-10-2013 дата публикации

METHOD FOR MANUFACTURING INDIUM TIN OXIDE NANOWIRES

Номер: US20130272953A1

Автор: Burns Richard W., Li Wen, Phelps Amanda, Zhou Chaoyin

Принадлежит:

A method for manufacturing indium tin oxide nanowires by preparing a solution that includes an indium-containing species, a tin-containing species and a polymeric material, wherein the solution has a molar ratio of tin to indium in a range from about 5 to about 15 percent, electrospinning fibers using the solution, and heating the fibers to a calcination temperature and maintaining the fibers at the calcination temperature for a predetermined calcination time. 1. An indium tin oxide nanowire manufactured by a method comprising:preparing a precursor aqueous solution comprising a tin-containing specie and an indium-containing specie wherein the molar ratio of the tin-containing specie to the indium-containing specie is about 5 to about 15%;preparing a polymer solution comprising a polymeric material and an organic solvent;mixing the precursor solution with the polymer solution to produce an electrospinning solution or sol-gel wherein together the tin-containing specie and the indium-containing specie are from about 2% to about 15% by weight of the electrospinning solution or sol-gel;electrospinning the electrospinning solution or sol-gel at a relative humidity from about 15 to about 60 percent while irradiating the electrospinning solution or sol-gel with infrared radiation to provide the indium-tin nanowire with a cross-sectional thickness of from about 1 to about 100 micrometers;drying the indium tin oxide nanowire at a drying temperature of about 100° C. to about 200° C. to a moisture content of less than about 20% by weight;heating the indium tin oxide nanowire, at a rate between about 2 and about 20° C. per minute from the drying temperature to a calcination temperature of from about 700° C. to about 1000° C.; and{'sup': '−3', 'maintaining the calcination temperature for a time from two hours to one week wherein the indium tin oxide nanowire has a resistivity of about 10Ω-cm.'}2. The indium tin oxide nanowire according to claim 1 , wherein the molar ratio of the ...

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Номер записи: 8

31-10-2013 дата публикации

METHOD FOR PRODUCING METAL OXIDE-CONTAINING PARTICLES, AND METHOD FOR PRODUCING AGGREGATES OF METAL OXIDE COLLOIDAL PARTICLES

Номер: US20130289133A1

Автор: Doshita Kazuhiro, Furuichi Toshitaka

Принадлежит: NIPPON SHEET GLASS COMPANY, LIMITED

A method for producing particles containing a metal oxide is provided, and the method includes: feeding a metal oxide sol having a pH of 7 or higher and containing metal oxide colloidal particles as dispersoids and water as a dispersion medium, into a liquid containing a solvent having a solubility in 20° C. water of 0.05 g/100 ml or more and having a relative permittivity of 30 or lower (protic solvent) or of 40 or lower (aprotic solvent) at 20° C., and thereby forming aggregates of the metal oxide colloidal particles in the liquid; and subjecting the aggregates to a treatment such as drying and heating, and thereby converting the aggregates into particles that are insoluble in water. By appropriately selecting the solvent, particles can be obtained in the form of flakes, fibers, spheres, and the like. 1. A method for producing particles containing a metal oxide , the method comprising the steps of;feeding a metal oxide sol having a pH of 7 or higher and containing metal oxide colloidal particles as dispersoids and water as a dispersion medium, into a liquid containing a solvent that is a protic solvent having a relative permittivity of 30 or lower at 20° C. and having a solubility in 20° C. water of 0.05 g/100 ml or more, or that is an aprotic solvent having a relative permittivity of 40 or lower at 20° C. and having a solubility in 20° C. water of 0.05 g/100 ml or more, and thereby forming aggregates of the metal oxide colloidal particles in the liquid; andsubjecting the aggregates to at least one treatment selected from drying, heating, and pressurization, to increase a binding force between the metal oxide colloidal particles constituting the aggregates, and thereby converting the aggregates into particles that are insoluble in water.2. The method for producing particles according to claim 1 , wherein the sol is fed into the liquid in the form of droplets.3. The method for producing particles according to claim 1 , wherein the sol is fed into the liquid while ...

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Номер записи: 9

19-12-2013 дата публикации

MULTI-ELEMENTS-DOPED ZINC OXIDE FILM, MANUFACTURING METHOD AND APPLICATION THEREOF

Номер: US20130334688A1

Автор: Chen Jixing, Huang Hui, Wang Ping, Zhou Mingjie

Принадлежит: OCEAN'S KING LIGHTING SCIENCE & TECHNOLOGY CO., LTD.

The invention relates to the semiconductor material manufacturing technical field. A multi-elements-doped zinc oxide film as well as manufacturing method and application in photo-electric devices thereof are provided. The manufacturing method comprises the following steps: (1) mixing the powder of GaO, AlO, SiOand ZnO according to the following percentage by mass: 0.5%˜10% of GaO, 0.5%˜5% of AlO, 0.5%˜1.5% of SiO, and the residue of ZnO; (2) sintering the powder mixture as target material; (3) putting the target material into a magnetic sputtering chamber, evacuating, setting-up work pressure of 0.2 Pa-5 Pa, introducing mixed gas of inert gas and hydrogen with a flow rate of 15 sccm˜25 sccm, adopting a sputtering power of 40 W˜200 W, and sputtering on the substrate to obtain the multi-elements-doped zinc oxide film. 1. A method for manufacturing a multi-elements doped zinc oxide film , comprising following steps:{'sub': 2', '3', '2', '3', '2', '2', '3', '2', '3', '2, 'mixing GaOpowder, AlOpowder, SiOpowder, and ZnO powder, sintering the resulted mixture to give a target, wherein the said GaOpowder accounts for 0.5%-10% of the total weight, the said AlOpowder accounts for 0.5%-5% of the total weight, the said SiOpowder accounts for 0.5%-1.5% of the total weight, and the rest is ZnO powder;'}loading the said target into a magnetron sputtering chamber, then evacuating the said chamber, and setting the operating pressure within the range of 0.2 Pa to 5 Pa, then inletting a mixed gas of an inert gas and a hydrogen gas into the said chamber at a flow rate of 15 sccm to 25 sccm, and sputtering on a substrate to give a multi-elements doped zinc oxide film, wherein the power of the said sputtering is in the range of 40 W to 200 W.20815. The method for manufacturing a multi-elements doped zinc oxide film of claim 1 , wherein the said GaOpowder accounts for 2%-4% of the total weight claim 1 , the said AlOpowder accounts for .%-.% of the total weight claim 1 , the said ...

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Номер записи: 10

26-12-2013 дата публикации

Chlorine-doped tin-oxide particles and manufacturing method therefor

Номер: US20130344336A1

Автор: Isamu Yashima, Kazuhiko Kato, Kenji Suzuoka, Satoshi Mogi, Yasunori Tabira

Принадлежит: Mitsui Mining and Smelting Co Ltd

A chlorine-doped tin oxide particle exhibits peaks at at least 108±5 cm −1 , 122±5 cm −1 , and 133±5 cm −1 in Raman spectroscopy. The chlorine-doped tin oxide particle preferably has an additional Raman spectral peak at 337±10 cm −1 . The chlorine-doped tin oxide particle preferably has a specific surface area of 10 to 300 m2/g. The chlorine-doped tin oxide particle preferably has an average primary particle size of 3 to 200 nm. The chlorine-doped tin oxide particle is preferably substantially free of oxygen deficiency.

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Номер записи: 11

27-02-2014 дата публикации

METHOD FOR CONTINUOUS PREPARATION OF INDIUM-TIN COPRECIPITATES AND INDIUM-TIN-OXIDE NANOPOWDERS WITH SUBSTANTIALLY HOMOGENEOUS INDIUM/TIN COMPOSITION, CONTROLLABLE SHAPE AND PARTICLE SIZE

Номер: US20140054521A1

Автор: Abraham Sinoj, Bravo-Vasquez Juan-Pablo, Gerein Nathan, Ma Guibin, Mahabadi Hadi K.

Принадлежит: HY-POWER NANO INC.

Disclosed herein are indium-tin-oxide nanoparticles and a method for continuously producing precipitated indium-tin nanoparticles having a particle size range of substantially from about 10 nm to about 200 nm and a substantially consistent ratio of indium to tin in the resultant nanoparticles across the duration of the continuous process, based on the ratio of indium to tin in a seeding solution. The method comprises preparing intermediate indium and tin compounds of the general formula [M(OH)C], where M represents the indium or tin ionic component of indium or tin salts, C represents the cationic component of indium or tin salt(s), x is a number greater than 0 and y=[M*valance−x]/C* valance in the seeding solution. The intermediate compounds are continuously precipitated with a base solution in a reaction vessel initially having a solvent contained therein. The method also provides a means for controlling the shape of the resultant nanoparticles. The resultant indium-tin nanoparticles may be further processed into dispersions. 149-. (canceled)50. A process for preparing an indium-tin-oxide nanopowder having a substantially consistent indium-to-tin ratio , a desired particle size range and desired particle shape comprising:{'sub': x', 'y, 'a) preparing a seeding solution including at least one indium salt, at least one tin salt, at least one solubility modifier, and at least one base in a solvent so as to form intermediate indium compounds and tin compounds having a general formula expressed as [M(OH)C], where M is an indium or tin ion, and C is the cationic part of the at least one indium or the least one tin salt, x is a number greater than 0 and y=[M*valance−x]/C* valance;'}b) adjusting the pH of the seeding solution and the concentration of the solubility modifier so as to solubilize the indium and tin intermediate compounds to near the onset of precipitation wherein the pH of the seeding solution is from about 0 to about 3;c) continuously introducing into a ...

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Номер записи: 12

06-03-2014 дата публикации

TRANSPARENT ELECTRIC CONDUCTOR

Номер: US20140060887A1

Автор: Chikyow Toyohiro, Nicolas David, PARK Seunghwan, SINGH Laura Jane, Umezawa Naoto

Принадлежит:

A transparent electric conductor includes titanium oxide doped with aluminum and at least one other dopant: 1. Transparent electric conductor , comprising titanium oxide doped with aluminum and at least one other dopant:{'sub': 1-a-b', 'a', 'b', 'y, 'either in the form TiAlXO, where X is a dopant or a mixture of dopants selected from the group consisting of Nb, Ta, W, Mo, V, Cr, Fe, Zr, Co, Sn, Mn, Er, Ni, Cu, Zn and Sc, a is in the range 0.01 to 0.50, and b is in the range 0.01 to 0.15;'}{'sub': 1-a', 'a', 'c', 'y-c, 'or in the form TiAlFO, where a is in the range 0.01 to 0.50, and c is in the range 0.01 to 0.10.'}2. Transparent electric conductor according to claim 1 , wherein a is in the range 0.02 to 0.15.3. Transparent electric conductor according to claim 1 , wherein a is in the range 0.03 to 0.12.4. Transparent electric conductor according to claim 1 , comprising TiAlXO claim 1 , where X is Nb claim 1 , a is in the range 0.02 to 0.12 claim 1 , and b is in the range 0.03 to 0.12.5. Transparent electric conductor according to claim 1 , further comprising Si or Ge or Sn as a substitutional atom of Al.6. Transparent electric conductor according to claim 1 , wherein the electrical resistivity of the transparent electric conductor is at most 10Ωcm.7. Transparent electric conductor according to claim 1 , wherein the refractive index of the transparent electric conductor is at least 2.15 at 550 nm.8. Transparent electric conductor according to claim 1 , wherein the light transmittance flatness index of the transparent electric conductor is within the range 1±0.066.9. Transparent electric conductor according to claim 1 , wherein the transparent electric conductor is in the form of a film having a thickness of at most 1 micrometer.10. Transparent electric conductor according to claim 1 , wherein the light transmittance claim 1 , in the wavelength range 400 nm to 700 nm claim 1 , of the transparent electric conductor in the form of a film having a thickness of 100 nm is ...

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Номер записи: 13

20-03-2014 дата публикации

METHOD FOR MANUFACTURING TIN(II) OXIDE POWDER FOR REPLENISHING TIN COMPONENT OF TIN-ALLOY PLATING SOLUTION, AND TIN (II) OXIDE POWDER MANUFACTURED USING SAID METHOD

Номер: US20140079618A1

Автор: Katase Takuma, Kuba Kanji, Masuda Akihiro

Принадлежит: MITSUBISHI MATERIALS CORPORATION

An object of the present invention is to provide tin(II) oxide powder which has extremely high solubility in an acid or an acidic plating solution, excellent in storage stability in the air and can heighten oxidation-preventive effect of Sn ion in the plating solution. The method for manufacturing tin(II) oxide powder of the present invention comprises Step () of preparing an aqueous acidic solution containing Sn ions, Step () of neutralizing the aqueous acidic solution by adding an aqueous alkaline solution to prepare a slurry of tin(II) hydroxide, Step () of dehydrating the prepared slurry to obtain a slurry of tin(II) oxide, Step () of separating the slurry of tin(II) oxide into a solid and a liquid to obtain tin(II) oxide, Step () of treating the obtained tin(II) oxide with an aqueous antioxidant solution, and Step () of vacuum drying the tin(II) oxide treated with the aqueous antioxidant solution. 1. A method for manufacturing tin(II) oxide powder for replenishing a tin component to a tin-alloy plating solution comprising steps of:{'sup': '2+', 'preparing an aqueous acidic solution containing Sn ions;'}neutralizing the aqueous acidic solution by adding an aqueous alkaline solution to prepare a slurry of tin(II) hydroxide;dehydrating the prepared slurry to prepare a slurry of tin(II) oxide;separating the slurry of tin(II) oxide into a solid and a liquid to obtain tin(II) oxide;treating the above obtained tin(II) oxide with an aqueous antioxidant solution; andvacuum drying the tin(II) oxide treated with the aqueous antioxidant solution.2. The method for manufacturing tin(II) oxide powder for replenishing a tin component to a tin-alloy plating solution according to claim 1 , wherein the treatment with the aqueous antioxidant solution is carried out by a method of spraying the aqueous antioxidant solution to the tin(II) oxide powder or dipping the tin(II) oxide powder in the aqueous antioxidant solution.3. The method for manufacturing tin(II) oxide powder for ...

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Номер записи: 14

03-04-2014 дата публикации

Fluorine-doped tin-oxide particles and manufacturing method therefor

Номер: US20140093734A1

Автор: Isamu Yashima, Kazuhiko Kato, Kenji Suzuoka, Satoshi Mogi, Yasunori Tabira

Принадлежит: Mitsui Mining and Smelting Co Ltd

Fluorine-doped tin oxide particles having a structure characterized by peaks at at least 123±5 cm −1 , 139±5 cm −1 , and 170±5 cm −1 in Raman spectroscopy. The particles preferably have additional Raman spectral peaks at 78±5 cm −1 , 97±5 cm −1 , 109±5 cm −1 , 186±5 cm −1 , and 207±5 cm −1 . The particles preferably have a specific surface area of 10 to 300 m 2 /g.

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Номер записи: 15

10-04-2014 дата публикации

ZINC OXIDE PRECURSOR AND METHOD OF DEPOSITING ZINC OXIDE-BASED THIN FILM USING THE SAME

Номер: US20140099443A1

Автор: Kim Myong Woon, Kim Seo Hyun, Lee Joo Young, Lee Sang Do, Lee Sang Ick, PARK Jongse, Park Sooho, Shin Hyung Soo, Yim Sang Jun, Yoo Seung Ho, Yoo Young Zo, Yoon Gun Sang

Принадлежит: SAMSUNG CORNING PRECISION MATERIALS CO., LTD.

A zinc oxide (ZnO) precursor and a method of depositing a ZnO-based thin film using the same, with which a high-quality and high-purity ZnO-based thin film can be deposited. The ZnO precursor includes a mixture solvent containing at least two organic solvents which are mixed and a source material comprising diethyl zinc or dimethyl zinc which is diluted in the mixture solvent. 1. A zinc oxide precursor comprising:a mixture solvent comprising at least two organic solvents which are mixed; anda zinc oxide precursor source material which is diluted in the mixture solvent.2. The zinc oxide precursor of claim 1 , wherein the zinc oxide precursor source material comprises diethyl zinc or dimethyl zinc.3. The zinc oxide precursor of claim 1 , wherein each of the organic solvents comprises paraffin-based hydrocarbon expressed by a formula CHor cyclo-paraffin-based hydrocarbon expressed by a formula CH claim 1 , where n is a number in a range from 5 to 12.4. The zinc oxide precursor of claim 3 , wherein the mixture solvent comprises octane and one of heptane claim 3 , hexane and pentane.5. The zinc oxide precursor of claim 1 , wherein a content of the zinc oxide precursor source material ranges from 0.1 to 2 mol/L.6. The zinc oxide precursor of claim 1 , wherein a vapor pressure of the zinc oxide precursor source material ranges from 95 to 99% of a vapor pressure of the mixture solvent.7. A method of depositing a zinc oxide-based thin film on a substrate by chemical vapor deposition claim 1 , comprising depositing the zinc oxide-based thin film using a zinc oxide precursor as recited in and an oxidizer.8. The method of claim 7 , wherein the organic solvents comprise paraffin-based hydrocarbon expressed by a formula CHor cyclo-paraffin-based hydrocarbon expressed by a formula CH claim 7 , where n is a number in a range from 5 to 12.9. The method of claim 8 , wherein the organic solvents comprise octane and one of heptane claim 8 , hexane and pentane.10. The method of claim 7 ...

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Номер записи: 16

04-01-2018 дата публикации

CVD COATED CUTTING TOOL WITH TEXTURED k-Al2O3 LAYER

Номер: US20180002817A1

Автор: ENGQVIST Jan, Lindahl Erik

Принадлежит:

The present disclosure relates to a coated cutting tool having a substrate and a coating, wherein the coating includes at least one layer of κ-AlOwith a thickness of 1-20 μm deposited by chemical vapour deposition (CVD). A χ-scan from −80° to 80° over the (0 0 6) reflection of the κ-AlOlayer shows the strongest peak centered around 0° and the full width half maximum (FWHM) of the peak is <25°. 1. A coated cutting tool comprising a substrate and a coating , wherein the coating comprises at least one layer of κ-AlOwith a thickness of 1-20 μm deposited by chemical vapor deposition , wherein a χ-scan from −80° to 80° over a (0 0 6) reflection of said κ-AlOlayer shows the strongest peak centered around 0° and wherein a FWHM of said peak is <25°.2. The coated cutting tool in accordance with claim 1 , wherein the strongest peak from the κ-AlOlayer in an X-ray diffractogram from 15° to 140° is a (0 0 2) reflection.3. The coated cutting tool in accordance with claim 2 , wherein the second strongest peak from the κ-AlOlayer in an X-ray diffractogram from 15° to 140° is a (0 0 4) reflection.4. The coated cutting tool in accordance with claim 3 , wherein the third strongest peak from the κ-AlOlayer in an X-ray diffractogram from 15° to 140° is the (0 0 6) reflection.5. The coated cutting tool in accordance with claim 1 , wherein an average thickness of the κ-AlOlayer is 2-10 μm.6. The coated cutting tool in accordance with claim 1 , wherein the coating further comprises an α-AlOlayer.7. The coated cutting tool in accordance with claim 6 , wherein said α-AlOlayer is located between said κ-AlOlayer and the substrate.8. The coated cutting tool in accordance with claim 1 , wherein the thickness of said α-AlOlayer is 0.5-2 μm or 0.7-1 μm.9. The coated cutting tool in accordance with claim 1 , wherein the coating further comprises one or more layers of TiN claim 1 , TiCN claim 1 , TiC claim 1 , TiCO claim 1 , TiAlCO and TiCNO.10. The coated cutting tool in accordance with claim 1 , ...

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Номер записи: 17

12-01-2017 дата публикации

METHOD OF PRODUCING STANNOUS OXIDE, STANNOUS OXIDE, METHOD OF Sn PLATING SOLUTION, AND METHOD OF REMOVING IMPURITIES FROM SN PLATING SOLUTION

Номер: US20170009078A1

Автор: Hirano Hirotaka, Katase Takuma

Принадлежит: MITSUBISHI MATERIALS CORPORATION

The method of producing stannous oxide includes: a Sn ion-containing acid solution forming step (S); a first neutralizing step (S), which is a step of forming Sn precipitates by adding one or more of alkaline solutions of ammonium carbonate, ammonium bicarbonate, and aqueous ammonia to the Sn ion-containing acid solution to retain pH at 3-6 therein; a Sn precipitate separating step (S); a Sn precipitate dispersing step (S), which is a step of dispersing the separated Sn precipitates in a solvent liquid to obtain a dispersion liquid; and a second neutralizing step (S), which is a step of forming SnO by adding an alkaline solution to the dispersion liquid of the Sn precipitates and then by heating, wherein Na, K, Pb, Fe, Ni, Cu, Zn, Al, Mg, Ca, Cr, Mn, Co, In, and Cd reside in the Sn ion-containing acid solution in the first neutralizing step (S). 1. A method of producing stannous oxide comprising:a Sn ion-containing acid solution forming step, which is a step of preparing a Sn ion-containing acid solution by adding Sn ions to an acid solution;a first neutralizing step, which is a step of forming Sn precipitates by adding one or more of alkaline solutions of ammonium carbonate, ammonium bicarbonate, and aqueous ammonia to the Sn ion-containing acid solution to retain pH at 3-6 therein;a Sn precipitate separating step, which is a step of separating the Sn precipitates from the Sn ion-containing acid solution;a Sn precipitate dispersing step, which is a step of dispersing the separated Sn precipitates in a solvent liquid to obtain a dispersion liquid; anda second neutralizing step, which is a step of forming SnO from the Sn precipitates by adding an alkaline solution to the dispersion liquid of the Sn precipitates and then by heating, whereinNa, K, Pb, Fe, Ni, Cu, Zn, Al, Mg, Ca, Cr, Mn, Co, In, and Cd reside in the Sn ion-containing acid solution in the first neutralizing step.2. The method of producing stannous oxide according to claim 1 , further comprising an acid ...

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Номер записи: 18

08-01-2015 дата публикации

METHOD FOR TREATMENT OF DISEASES WITH DIOXOANTHRACENE SULPHONATE DERIVATIVES

Номер: US20150011636A1

Автор: Carlino Stefano, DI NAPOLI ALESSANDRO

Принадлежит: LABORATOIRE MEDIDOM SA

Compounds that may have anti-inflammatory activity have the general formula (I): Wherein R, R, Rare each independently H or a Calkyl group or a Cacyl group; Rand Rare each independently H or a group of formula —SOR, wherein Ris H or a Calkyl group or a Cacyl group; with the proviso that at least one of Rand Ris a group of formula —SOR, or a pharmaceutically acceptable salt thereof. 117-. (canceled) The present invention relates to certain dioxoanthracene sulphonate derivatives, to a process for the preparation thereof, and to the use of the compound as a medicament, particularly in the therapy of conditions that are influenced by pro-inflammatory cytokines of the IL-1 family, particularly inflammatory and auto-immune diseases, for instance arthritic diseases.Rhein, 4,5-dihydroxy-9,10-dioxo-2-anthracene carboxylic acid, and its diacetylated derivative diacerein, are known for a number of pharmaceutical applications. Particularly rhein and diacerein are known for use in the treatment of arthritic diseases, in particular osteoarthritis and rheumatoid arthritis, for instance as described in U.S. Pat. No. 4,244,968, GB 1 578 452, EP 544 880 B1, EP 636 602 B1 and U.S. Pat. No. 6,610,750, and psoriasis and associated conditions, as described in EP 1 248 608 B1 Rhein and diacerein have also been described for the treatment of various conditions, for instance inflammatory diseases, auto-immune diseases, vascular diseases, pain relief, diabetic nephrosis.The cytokines IL-1 (α, β) and TNF-α are considered to play an essential role in the mediation of the inflammatory process and cartilage degradation. IL-1 and TNF-α are also considered to be implicated in the mediation of biological responses to endotoxins and other infectious stimuli. An extensive review of pro-inflammatory and anti-inflammatory cytokines is given by C. A. Dinarello, MD et L. L. Moldawer, PhD in the primer for clinicians “-2000, Amgen Inc. The cytokines IL-1 and TNF-α have been implicated in the mechanism of ...

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Номер записи: 19

21-01-2016 дата публикации

METHOD FOR PRODUCING LACTIDE DIRECTLY FROM LACTIC ACID AND A CATALYST USED THEREIN

Номер: US20160016151A1

Автор: Chang Jong-San, HWANG Dong Won, Hwang Young Kyu, LEE U-Hwang, UPARE Pravin P.

Принадлежит:

The present invention provides a method for directly producing lactide by subjecting lactic acid to a dehydration reaction in the presence of a catalyst comprising a tin compound, preferably, a tin (IV) compound, wherein lactide can be produced directly or by one step from lactic acid, without going through the step of producing or separating lactic acid oligomer. The method of the present invention has advantages of causing no loss of lactic acid, having a high conversion ratio to lactic acid and a high selectivity to optically pure lactide, and maintaining a long life time of the catalyst. Further, since lactic acid oligomer is not or hardly generated and the selectivity of meso-lactide is low, the method also has an advantage that the cost for removing or purifying this can be saved.

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Номер записи: 20

18-01-2018 дата публикации

METHOD FOR DYE-FREE COLORING OF ONE-TIME ANODIC ALUMINUM OXIDE SURFACE

Номер: US20180016696A1

Автор: CHEN Cheng-Hui, Chu Bo-Yu, CHUNG Chen-Kuei, Liao Ming-Wei, Liao Shu-Hsien

Принадлежит:

A method for dye-free coloring of one-time anodic aluminum oxide surface is revealed. First provide a substrate containing aluminum. The substrate containing aluminum is anodized once at room temperature. The anodizing process includes a step of applying a pulse signal on the substrate containing aluminum for a first period of time. Thus a porous aluminum oxide layer is formed on surface of the substrate containing aluminum. The pulse signal includes a part with positive voltage and a part with negative voltage. Then a metal layer is deposited on the surface of the porous aluminum oxide layer. The porous aluminum oxide layer has a first interference wavelength. Next perform a linear regression of the first interference wavelength versus the first period of time. The absolute value of the slope of the regression line obtained ranges from 1.8 to 38.5. The absolute value is positively correlated with the positive voltage. 1. A method for dye-free coloring of one-time anodic aluminum oxide surface comprising the steps of:providing a substrate containing aluminum;performing one-time anodizing of the substrate containing aluminum at room temperature; wherein one-time anodizing includes applying a pulse signal to the substrate containing aluminum for a first period of time so that a porous aluminum oxide layer is formed on a surface of the substrate containing aluminum; wherein the pulse signal includes a part with positive voltage and a part with negative voltage; anddepositing a metal film on the porous aluminum oxide layer and performing a linear regression of a first interference wavelength of the porous aluminum oxide layer versus the first period of time; wherein an absolute value of a slope of a regression line obtained ranges from 1.8 to 38.5 and is positively correlated with the positive voltage of the pulse signal.2. The method as claimed in claim 1 , wherein the positive voltage of the pulse signal is ranging from 20 Volts to 60 Volts; the absolute value of the ...

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Номер записи: 21

22-01-2015 дата публикации

PROTON CONDUCTOR

Номер: US20150021510A1

Автор: Nishihara Takashi, ZENITANI Yuji

Принадлежит:

An exemplary proton conductor according to the present disclosure has a perovskite-type crystal structure expressed by the compositional formula ABB′O. The A element is an alkaline-earth metal and is contained in a range of 0.4 Подробнее

Номер записи: 22

26-01-2017 дата публикации

MISFIT P-TYPE TRANSPARENT CONDUCTIVE OXIDE (TCO) FILMS, METHODS AND APPLICATIONS

Номер: US20170025196A1

Автор: Aksit Mahmut, Robinson Richard D.

Принадлежит: CORNELL UNIVERSITY

A p-type transparent conductive oxide (TCO) mixed metal oxide material layer formed upon a substrate has a formula M1M2Ogenerally, CaCoOmore specifically, and CaC4Omost specifically. Embodiments provide that the p-type TCO mixed metal oxide material may be formed absent an epitaxial crystalline relationship with respect to the substrate while using a sol-gel synthesis method that uses a chelating polymer material and not a block copolymer material. 1. A structure comprising:a substrate; and{'sub': x', 'y', 'z, 'an at least partially crystalline p-type mixed metal oxide material having a chemical composition M1M2Oand located upon the substrate without an epitaxial crystalline relationship with respect to the substrate.'}2. The structure of wherein the substrate comprises an optically transparent substrate.3. The structure of wherein:M1 is at least one metal selected from the group consisting of alkali metals, alkali earth metals and post transition metals that are lighter than radon; when x is normalized to unity y ranges from 0.2 to 5.0, including stoichiometric and non-stoichiometric compositions; and', 'z is determined consistent with x and y, considering oxidation states of M1 and M2., 'M2 is a least one metal selected from the group consisting of transition metals that are lighter than radon; further wherein4. The structure of wherein:M1 as an alkali metal is selected from the group consisting of lithium, sodium, potassium, rubidium and cesium;M1 as an alkali earth metal is selected from the group consisting of beryllium, magnesium, calcium, strontium and barium;M1 as a post transition metal lighter than radon is selected from the group consisting of copper aluminum, bismuth and zinc; andM2 is selected from the group consisting of chromium, nickel, cobalt, iron, manganese, ruthenium and rhodium.5. A structure comprising:a substrate; and{'sub': x', 'y', 'z, 'claim-text': when x is normalized to unity y ranges from about 1.2 to about 1.5;', 'z is selected ...

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Номер записи: 23

24-04-2014 дата публикации

Method of producing sulfide compound semiconductor by use of solvothermal method and rod-like crystal of sulfide compound semiconductor

Номер: US20140110640A1

Автор: Haijun Tao, Kazumichi Yanagisawa, Keisuke Kishita, Sumio Kamiya

Принадлежит: Kochi University NUC, Toyota Motor Corp

The present invention provides a method of producing a sulfide compound semiconductor containing Cu, Zn, Sn and S, in which the method includes a solvothermal step of conducting a solvothermal reaction of Cu, Zn, Sn and S in an organic solvent, and a rod-like crystal of sulfide compound semiconductor containing Cu, Zn, Sn and S.

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Номер записи: 24

01-02-2018 дата публикации

NANOMETRIC TIN-CONTAINING METAL OXIDE PARTICLE AND DISPERSION, AND PREPARATION METHOD AND APPLICATION THEREOF

Номер: US20180031739A1

Автор: Chen Jianfeng, Shen Zhigang, SHER Hock Sing, Soh Wei Kian, WANG Aici, YUN Sung Lai Jimmy, Zhang Jiyao, ZHONG Jie

Принадлежит:

There is disclosed a tin-containing metal oxide nanoparticle, which has an index of dispersion degree less than 7 and a narrow particle size distribution which is defined as steepness ratio less than 3. There is disclosed dispersion, paint, shielding film and their glass products which comprise the said nanoparticles. Besides, there are also disclosed processes of making the tin-containing metal oxide nanoparticle and their dispersion. The tin-containing metal oxide nanoparticles and their dispersion disclosed herein may be applied on the window glass of houses, buildings, vehicles, ships, etc. There is provided an excellent function of infrared blocking with highly transparent, and to achieve sunlight controlling and thermal radiation controlling. 139-. (canceled)40. A method for preparing a dispersion of tin-containing metal oxide nano-particles , wherein the tin-containing metal oxide comprises tin element and an aid metallic element other than tin selected from antimony , indium , titanium , copper , zinc , zirconium , cerium , yttrium , lanthanum , niobium or a mixture thereof; and the tin-containing metal oxide nano-particles have an initial average particle diameter of 2-50 nm , a particle diameter distribution as defined with an index of dispersion degree of less than 7 and a steepness ratio of less than 3 , the method comprises steps of:(1) reacting a solution containing tin ions and a solution containing ions of the aid metallic element other tin with a solution of precipitating agent at a temperature of less than 100° C. under a non-acidic condition in an aqueous medium comprising at least one of alcohols, amides, ketones, epoxides and mixtures thereof to form tin-containing metal oxide precursor particles and a first by-product in ionic form; wherein the precipitating agent is selected from alkali metal hydroxides, alkaline earth metal hydroxides, alkali metal carbonates, alkaline earth metal carbonates, alkali metal bicarbonates, ammonia, organic bases ...

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Номер записи: 25

01-02-2018 дата публикации

SYNTHESIZED, SURFACE-FUNCTIONALIZED, ACIDIFIED METAL OXIDE MATERIALS FOR ENERGY STORAGE, CATALYTIC, PHOTOVOLTAIC AND SENSOR APPLICATIONS

Номер: US20180034049A1

Автор: Johnson Paige L., Neff Jonathan G.

Принадлежит:

An acidified metal oxide (“AMO”) material, preferably in monodisperse nanoparticulate form 20 nm or less in size, having a pH<7 when suspended in a 5 wt % aqueous solution and a Hammett function H>−12, at least on its surface. The AMO material is useful in applications such as a battery electrode, catalyst, or photovoltaic component. 1. A battery electrode nanomaterial comprising:{'sub': '0', 'a non-soluble solid metal oxide having a particle dimension no greater than 20 nm and having, at least on its surface, a pH<5.5 and a Hammet function H>−12;'}the non-soluble solid metal oxide being in a dried form after synthesis, the pH being measured when the dried form is re-suspended in water at 5 wt %.2. A battery electrode nanomaterial according to claim 1 , the non-soluble solid metal oxide being tin oxide.3. A battery electrode nanomaterial according to claim 2 , the tin oxide having a lithiation capacity of at least 1400 mAh/g.4. A battery electrode nanomaterial according to claim 2 , the tin oxide having a lithiation capacity of at least 1300 mAh/g.5. A battery electrode nanomaterial according to claim 2 , the tin oxide having a lithiation capacity of at least 1200 mAh/g.6. A battery electrode nanomaterial according to claim 2 , the tin oxide having a lithiation capacity of at least 1100 mAh/g.7. A battery electrode nanomaterial according to claim 2 , the tin oxide having a lithiation capacity of at least 1000 mAh/g.8. A battery electrode nanomaterial according to claim 2 , the tin oxide having a lithiation capacity of at least 900 mAh/g.9. A battery electrode nanomaterial according to claim 2 , the tin oxide having a lithiation capacity>800 mAh/g.10. A battery electrode nanomaterial according to claim 1 , the non-soluble solid metal oxide being surface functionalized with at least one electron-withdrawing group claim 1 , the at least one electron-withdrawing group having a molecular weight less than 200.11. A battery electrode nanomaterial according to claim 1 , the ...

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Номер записи: 26

31-01-2019 дата публикации

METHOD FOR PRODUCING A CONTACT MATERIAL ON THE BASIS OF SILVER-TIN OXIDE OR SILVER-ZINC OXIDE, AND CONTACT MATERIAL

Номер: US20190035563A1

Автор: Behrens Volker, Cinaroglu Havva, Honig Thomas

Принадлежит:

A method for producing a contact material on the basis of silver-tin oxide or silver-zinc oxide is disclosed. Tin oxide particles and/or zinc oxide particles are mixed with a powder of a metal different from silver. The mixture is heated beyond the melting point of the metal powder such that the tin oxide particles and/or zinc oxide particles are wetted with liquid metal. The mixture is exposed to an atmosphere containing oxygen and the metal is thereby oxidized. Thereafter, the mixture product formed by the oxidation step is embedded as a powder into a silver matrix. The product further relates to a corresponding contact material. 1. A method for the production of a contact material based on silver tin oxide or silver zinc oxide , the method comprising the steps of:forming a mixture by mixing particles of tin oxide and/or zinc oxide with a powder of a metal that differs from silver;heating this mixture beyond the melting point of the metal powder, wherein the tin oxide and/or zinc oxide particles are wetted with liquid metal;exposing the mixture to an oxygen-containing atmosphere thereby oxidizing the metal; andembedding the mixture formed by the oxidation step as a powder in a silver matrix.2. The method as claimed in claim 1 , wherein the metal powder contains bismuth as the main component.3. The method as claimed in claim 2 , wherein the oxidation step is carried out at a raised temperature of at least 600° C.4. The method as claimed in claim 1 , wherein the oxidation step is carried out at a raised temperature of at least 600° C.5. The method as claimed in claim 1 , wherein the mixture formed by the oxidation step undergoes a heat treatment at a raised temperature of at least 1000° C.6. The method as claimed in claim 1 , wherein embedding into the silver matrix is carried out by mixing with silver powder and subsequently sintering the silver powder.7. A contact material produced using the method as claimed in . This continuation application claims priority to ...

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Номер записи: 27

11-02-2016 дата публикации

COMPOSITE METAL OXIDE MATERIALS INCLUDING POLYCRYSTALLINE NANOFIBERS, MICROPARTICLES, AND NANOPARTICLES, GAS SENSORS USING THE SAME AS A SENSING MATERIAL THEREOF, AND MANUFACTURING METHODS THEREOF

Номер: US20160041116A1

Автор: Cho Hee Jin, KIM Il Doo

Принадлежит:

Provided are a composite metal oxide material, a method of manufacturing the same, and a gas sensor using the same as a sensing material thereof. The composite metal oxide material may include polycrystalline nanofibers and at least one of microparticles and nanoparticles. The use of the composite metal oxide material makes it possible to improve structural, mechanical, thermal, and lifetime stabilities of the gas sensor. Further, the presence of the microparticles and/or nanoparticles allows the gas sensor to have a base resistance lower than that of a nanofiber-based gas sensor. Since the microparticles and/or nanoparticles are attached to the nanofibers, the composite metal oxide material can have an increased mobility of electrons or holes and an increased surface area, and thus, the gas sensor can have fast response/recovery speeds and high gas sensitivity. 1. A composite sensing material comprising:a composite containing polycrystalline nanofibers formed of a metal oxide and at least one of microparticles and nanoparticles formed of a same metal oxide,wherein the polycrystalline nanofibers, the microparticles, and the nanoparticles have weight percentages X, Y, and Z, respectively, whose sum is 100 wt %, andthe composite has:a composition ratio of X:Y:Z for the composite containing the polycrystalline nanofibers, the microparticles, and the nanoparticles, where the value X is greater than or equal to 20 wt % and is smaller than or equal to 95 wt %, the value Y is greater than 0 wt % and is smaller than or equal to 80 wt %, and the value Z is greater than 0 wt % and is smaller than or equal to 30 wt %,a composition ratio of X:Y, for the composite containing the polycrystalline nanofibers and the microparticles, or of X:Z, for the composite containing the polycrystalline nanofibers and the nanoparticles, where the value X is greater than or equal to 10 wt % and is smaller than or equal to 90 wt %, the value Y or Z is greater than or equal to 10 wt % and is ...

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Номер записи: 28

18-02-2021 дата публикации

STANNOUS OXIDE POWDER

Номер: US20210047198A1

Автор: Imori Toru, TAKEMOTO Koichi

Принадлежит:

The purpose of the present invention is to provide a stannous oxide, which has excellent solubility and resistance to oxidation, from a stannous oxide powder comprising a stannous oxide and inevitable impurities, the stannous oxide powder having a stannous oxide content of 99.99 mass % or more in dry mass, a specific surface area of less than 0.5 m/g, a D50 particle size of 20 to 60 μm, and a half width of the particle size distribution of 5 to 30 μm. 1. A stannous oxide powder comprising stannous oxide and inevitable impurities , the stannous oxide powder having:a stannous oxide content of 99.99% by mass or more in dry mass;{'sup': '2', 'a specific surface area of less than 0.5 m/g;'}a D50 particle size of from 20 to 60 μm; anda half width of a particle size distribution of from 5 to 30 μm.2. The stannous oxide powder according to claim 1 , wherein a water content in stannous oxide is from 1 to 5 wt %.3. The stannous oxide powder according to claim 1 , wherein the stannous oxide powder has a chlorine content of 1 ppm or less and a sulfur content of 10 ppm or less.4. The stannous oxide powder according to claim 1 , wherein the stannous oxide powder has a sodium content of 5 ppm or less and a potassium content of 5 ppm or less.5. The stannous oxide powder according to claim 1 , wherein the stannous oxide powder has an antimony content of 5 ppm or less.6. The stannous oxide powder according to claim 1 , wherein the stannous oxide powder has a TAP density of from 1.0 to 4.0 g/cm.7. The stannous oxide power according to claim 1 , wherein when 100 g/L of stannous oxide powder is added to a solution having a methanesulfonic acid concentration of 100 g/L claim 1 , the stannous oxide is dissolved in the solution for a time less than or equal to 30 seconds and has a turbidity after dissolution of 20 degrees. The present invention relates to stannous oxide powder.When performing tin plating, an insoluble electrode (platinum, noble metal oxide, or the like) may be used in ...

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Номер записи: 29

19-02-2015 дата публикации

Metal complex of fluorinated tin oxide and titanium oxide and preparation method thereof

Номер: US20150051069A1

Автор: Hyun-Seog Roh, Kee Young Koo, Kwang Bok Yi, Nu Ri Jeon, Soon Jin Kwon, Un-Ho Jung, Wang Lai Yoon, Woohyun Kim

Принадлежит: Korea Institute of Energy Research KIER

Disclosed is a metal complex including: a tin oxide; titanium oxide nanorods in a rutile phase formed on the tin oxide; and titanium oxide nanoparticles in an anatase phase formed on the titanium oxide nanorods in a rutile phase, and a preparation method thereof, and can be used as a catalyst support in various forms.

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Номер записи: 30

08-05-2014 дата публикации

TIN(II) OXIDE POWDER FOR REPLENISHING TIN COMPONENT OF TIN-ALLOY PLATING SOLUTION AND METHOD FOR MANUFACTURING SAID POWDER

Номер: US20140127109A1

Автор: Katase Takuma, Kuba Kanji, Masuda Akihiro

Принадлежит: MITSUBISHI MATERIALS CORPORATION

An object and a problem of the present invention is to provide tin (II) oxide powder which has extremely high solubility in an acid or an acidic plating solution and excellent in storage stability in the air. The tin (II) oxide powder of the present invention is for replenishing a tin component of a tin-alloy plating solution, and comprises 100 to 5000 ppm of an antioxidant being contained in the powder with a mass ratio, and has such a dissolution rate that when 0.1 g of the tin (II) oxide powder is added to 100 ml of 100 g/L aqueous alkylsulfonic acid solution at a temperature of 25° C. and stirred, then the powder dissolves therein within 180 seconds. 1. Tin (II) oxide powder for replenishing a tin component of a tin-alloy plating solution ,which comprises 100 to 5000 ppm of an antioxidant being contained in the powder with a mass ratio, andhas such a dissolution rate that when 0.1 g of the tin (II) oxide powder is added to 100 ml of 100 g/L aqueous alkylsulfonic acid solution at a temperature of 25° C. and stirred, then the powder completely dissolves therein within 180 seconds.2. The tin (II) oxide powder for replenishing tin component of tin-alloy plating solution according to claim 1 , wherein the antioxidant is at least one selected from the group consisting of glyceraldehyde claim 1 , phenylhydrazine claim 1 , sodium borohydride claim 1 , potassium borohydride claim 1 , lithium borohydride claim 1 , tetrahydrofuran-borane complex claim 1 , dimethylamine-borane complex claim 1 , diphenylamine-borane complex and pyridine-borane complex.3. A method for manufacturing the tin (II) oxide powder for replenishing tin component of tin-alloy plating solution according to claim 1 , comprising steps of:{'sup': '2+', 'preparing an aqueous acidic solution containing Snions;'}neutralizing the aqueous acidic solution by adding an aqueous alkaline solution to prepare a slurry of tin (II) hydroxide;dehydrating the prepared slurry to obtain a slurry of tin (II) oxide; ...

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Номер записи: 31

26-02-2015 дата публикации

METHODS OF FORMING METAL OXIDE

Номер: US20150056798A1

Автор: Collins Dale W., Korber Mark S., Krishnamurthy Srividya, Lengade Swapnil, Ramaswamy Durai, Rocklein Noel

Принадлежит:

Some embodiments include methods of forming memory cells. Metal oxide may be deposited over a first electrode, with the deposited metal oxide having a relatively low degree of crystallinity. The degree of crystallinity within the metal oxide may be increased after the deposition of the metal oxide. A dielectric material may be formed over the metal oxide, and a second electrode may be formed over the dielectric material. The degree of crystallinity may be increased with a thermal treatment. The thermal treatment may be conducted before, during, and/or after formation of the dielectric material. 1. A method of increasing crystallinity within a metal oxide , comprising:annealing the metal oxide at a temperature of at least about 600° C. while exposing the metal oxide to an environment which is either inert relative to reaction with all constituents of the metal oxide, or reducing relative to reaction with one or more constituents of the metal oxide; the metal oxide being electrically conductive after said anneal.2. The method of wherein the metal oxide comprises oxygen in combination with one or more of praseodymium claim 1 , barium claim 1 , calcium claim 1 , manganese claim 1 , strontium claim 1 , titanium claim 1 , iron claim 1 , cesium and lead.3. The method of wherein the metal oxide comprises PrCaMnO; where the listed composition is described in terms of principle components claim 1 , rather than in terms of a specific stoichiometry.4. The method of wherein the environment comprises H.5. The method of wherein the environment comprises argon and/or N.6. A method of forming an electrically conductive metal oxide claim 1 , comprising:depositing metal oxide over an underlying material; andafter the depositing, increasing crystallinity of the metal oxide by annealing the metal oxide at a temperature of at least about 600° C. while exposing the metal oxide to an environment which is reducing relative to reaction with one or more constituents of the metal oxide.7. The ...

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Номер записи: 32

25-02-2016 дата публикации

SINGLE-STEP SYNTHESIS OF NANOSTRUCTURED THIN FILMS BY A CHEMICAL VAPOR AND AEROSOL DEPOSITION PROCESS

Номер: US20160056448A1

Автор: An Woo-Jin, Biswas Pratim, Chadha Tandeep Singh

Принадлежит:

The present disclosure is generally directed to a single-step synthesis of nanostructured thin films by a chemical vapor and aerosol deposition (CVAD) process. The present disclosure is also directed to methods for controlling the morphology of the nanostructured thin films. The films can be used, for example, in lithium ion and/or sodium ion battery electrodes, solar cells and gas sensors. 1. A chemical vapor and aerosol deposition process for the preparation of a metal species-based nanostructured film , the process comprising:introducing at least one vaporized metal precursor into a reaction chamber;decomposing, at least in part, the at least one vaporized precursor to form metal species-based nanoparticles;depositing the nanoparticles and any remaining vaporized precursor onto a temperature controlled substrate; and, sintering the nanoparticles to form the metal species-based nanostructured film.2. The process of claim 1 , wherein the metal species-based nanoparticles comprise a metal oxide selected from the group consisting of lithium titanate claim 1 , aluminum titanate claim 1 , titanium dioxide claim 1 , tin oxide claim 1 , lithium manganese oxide claim 1 , lithium cobalt oxide claim 1 , lithium manganese nickel cobalt oxide claim 1 , nickel oxide claim 1 , copper oxide claim 1 , and combinations thereof.3. The process of claim 1 , wherein the nanostructure is of a morphology selected from the group consisting of a predominantly columnar morphology claim 1 , a predominantly granular morphology claim 1 , a predominantly smooth morphology claim 1 , a predominantly nanorod morphology claim 1 , a predominantly nanowire morphology claim 1 , and a predominantly branched morphology.4. The process of claim 3 , wherein the nanostructure is of a predominantly columnar morphology.5. The process of claim 4 , wherein the columnar morphology has a crystalline order of from about 1 nanometer to about 5 micrometers.6. The process of claim 1 , wherein the at least one ...

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Номер записи: 33

15-05-2014 дата публикации

Tin dioxide nanopartcles and method for making the same

Номер: US20140135206A1

Автор: Brant U. Kolb, Mark J. Hendrickson, Neeraj Sharma

Принадлежит: 3M Innovative Properties Co

Plurality of crystalline, surface modified tin oxide nanoparticles, wherein the particles have a largest dimension up to 20 nm, and wherein the surface modifier comprises at least one of an organic carboxylic acid or anion thereof, including a dispersion comprising the crystalline, surface modified tin oxide nanoparticles and methods to make the same. The crystalline surface modified doped tin oxide nanoparticles are useful, for example, for preparing transparent electrodes, heat mirrors and energy storage devices.

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Номер записи: 34

22-05-2014 дата публикации

Transparent conductive film

Номер: US20140141237A1

Автор: Kazuaki Sasa, Minoru Kanatani, Tomohiro Takeyasu, Yusuke Yamamoto

Принадлежит: Nitto Denko Corp

A transparent conductive film includes a film base, and a polycrystalline layer of indium tin oxide formed on the film base. The polycrystalline layer has a gradient of a density of tin oxide in a thickness direction thereof. A maximum value of the density of tin oxide in the thickness direction of the polycrystalline layer is 6 wt % to 12 wt %. The polycrystalline layer has a thickness of 10 nm to 35 nm. An average value of maximum sizes of crystal grains composing the polycrystalline layer is 380 nm to 730 nm.

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Номер записи: 35

08-03-2018 дата публикации

FLUOROALKYL-CONTAINING CURABLE ORGANOPOLYSILOXANE COMPOSITION, CURED OBJECT OBTAINED THEREFROM, AND ELECTRONIC COMPONENT OR DISPLAY DEVICE INCLUDING SAID CURED OBJECT

Номер: US20180065347A1

Автор: Fukui Hiroshi, Masatomi Toru, OGAWA Takuya

Принадлежит:

A curable organopolysiloxane composition containing a fluoroalkyl group is disclosed. The composition comprises: (A) an organopolysiloxane containing a fluoroalkyl group, having at least two alkenyl groups in a molecule, where 10 mol % or more of all substitution groups on the silicon atoms is a fluoroalkyl group, and the average degree of polymerization is less than 150; (B) an organohydrogen polysiloxane having at least two silicon-bonded hydrogen atoms in a molecule at an amount where the silicon-bonded hydrogen atoms in the component is 0.1 to 1.0 mol with regard to a total of 1 mol of the alkenyl groups in component (A); (C) an effective amount of a hydrosilylation reaction catalyst; and optionally, (D) a solvent. The composition generally has a high dielectric constant and favorable transparency. A cured product and applications of the composition and the cured product thereof are also disclosed. 1. A curable organopolysiloxane composition containing a fluoroalkyl group , comprising:{'sub': p', '2p+1, '(A) 100 parts by mass of an organopolysiloxane containing a fluoroalkyl group, having at least two alkenyl groups with 2 to 12 carbon atoms in a molecule, where 10 mol % or more of all substitution groups on the silicon atoms is a fluoroalkyl group as expressed by (CF)—R— where R represents an alkylene group with 1 to 10 carbon atoms, and p represents an integer from 1 to 8, and the average degree of polymerization is less than 150;'}(B) an organohydrogen polysiloxane having at least two silicon-bonded hydrogen atoms in a molecule at an amount where the silicon-bonded hydrogen atoms in the component is 0.1 to 1.0 mol with regard to a total of 1 mol of the alkenyl groups in component (A);(C) an effective amount of a hydrosilylation reaction catalyst; and(D) 0 to 2,000 parts by mass of a solvent, with regard to a total of 100 parts by mass of components (A) to (C).4. The curable organopolysiloxane composition containing a fluoroalkyl group according to claim 1 , ...

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Номер записи: 36

08-03-2018 дата публикации

Method for chlorination and dehydrogenation of ethane

Номер: US20180065902A1

Автор: Jingguang ZHONG, Xing Liu, Xuehua Liu

Принадлежит: Zhongke Yigong (Xiamen) Chemical Tech Co Ltd

The present invention relates to a method for chlorination and dehydrogenation of ethane, comprising: mixing and reacting a low-melting-point metal chloride with C 2 H 6 , such that the low-melting-point metal chloride is reduced to a liquid-state low-melting-point metal, and the C 2 H 6 is chlorinated and dehydrogenized to give a mixed gas containing HCl, C 2 H 6 , C 2 H 4 , C 2 H 2 and C 2 H 3 Cl. In the method, the low-melting-point metal chloride is used as a raw material for chlorination and dehydrogenation, and the low-melting-point metal produced after the reaction is used as an intermediate medium. The method has the characteristics of simple process, low cost and high yield. Moreover, some acetylene and vinyl chloride can be produced as by-products at the same time when the ethylene is produced, by controlling the ratio of ethane to the chloride as desired in production.

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Номер записи: 37

29-05-2014 дата публикации

Surface Modifier For Transparent Oxide Electrode, Surface-Modified Transparent Oxide Electrode, And Method For Producing Surface-Modified Transparent Oxide Electrode

Номер: US20140147628A1

Автор: Itoh Yusuke, KIYOMORI Ayumu

Принадлежит: SHIN-ETSU CHEMICAL CO., LTD.

A surface modifier for a transparent oxide electrode contains a reactive silyl compound represented by General Formula (1): 2. The surface modifier for a transparent oxide electrode according to claim 1 , wherein X is a single bond in General Formula (1).3. The surface modifier for a transparent oxide electrode according to claim 1 , wherein the transparent oxide electrode is selected from the group consisting of fluorine-doped tin oxides claim 1 , aluminum-doped zinc oxides claim 1 , indium-doped zinc oxides claim 1 , gallium-doped zinc oxides claim 1 , tin-doped indium oxides claim 1 , and niobium-doped titanium oxides.4. A surface-modified transparent oxide electrode formed by coating a transparent oxide electrode with a surface modifier for a transparent oxide electrode comprising a reactive silyl compound represented General Formula (1) according to claim 1 , wherein the surface-modified transparent oxide electrode has a surface free energy of at least 20 mN/m.5. The surface-modified transparent oxide electrode according to claim 4 , wherein claim 4 , on the surface of the surface-modified transparent oxide electrode claim 4 , a ratio of the number of silicon atoms to the number of the metal atoms contained on the electrode surface obtained by X-ray photoelectron spectroscopy is at least 0.04.6. The surface-modified transparent oxide electrode according to claim 4 , wherein an absolute value of the amount of change in the root mean square surface roughness of the surface-modified transparent oxide electrode is not more than 0.5 nm.7. The surface-modified transparent oxide electrode according to claim 4 , wherein an average thickness of the surface-modified layer of the surface-modified transparent oxide electrode is not more than 3 nm.8. The surface-modified transparent oxide electrode according to claim 4 , wherein the transparent oxide electrode is selected from the group consisting of fluorine-doped tin oxides claim 4 , aluminum-doped zinc oxides claim 4 , ...

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Номер записи: 38

05-06-2014 дата публикации

TRANSPARENT CONDUCTING OXIDE MATERIAL AND METHODS OF PRODUCING SAME

Номер: US20140151611A1

Автор: Arca Elisabetta, Fleischer Karsten, Gounko Iouri, Shvets Igor

Принадлежит: THE PROVOST, FELLOWS, FOUNDATION SCHOLARS, AND THE OTHER MEMBERS OF BOARD OF

The invention relates to a new type of material and describes a novel material and way to improve the transparency of a transition metal oxide by employing an anionic doping strategy to modify the transparency. At the same time a cationic dopant is used to improve conductivity. 1. A transparent conducting oxide material comprising:{'sub': 2', '3, 'a host oxide in form XO, preferably of a corundum type, wherein X is selected from at least one of Vanadium, Chromium, Aluminium or Iron;'}a first doping element, wherein said first doping element is selected from at least one of Magnesium, Zinc, Lithium, Copper, Chromium, Iron, Vanadium, Aluminium or Calcium; anda second doping element, wherein said second doping element is selected from nitrogen or phosphorous.2. The transparent conducting oxide material of wherein the second doping element comprises Nitrogen.3. The transparent conducting oxide material of wherein the corundum type host oxide comprises Chromium claim 1 , the first doping element comprises Magnesium and the second doping element comprises Nitrogen.4. The transparent conducting oxide material of wherein the material is a transparent p-type material.5. The transparent conducting oxide material of wherein the second doping element is configured to alter the lattice structure leading to a reduced optical absorption in the material.6. The transparent conducting oxide material of wherein the second doping element alters the lattice structure leading to an improved electron mobility in the material.7. A transparent p-type material comprising oxide of one or more of Vanadium; Chromium or Iron and further comprising Magnesium doping and Nitrogen doping.8. A transparent p-type conducting oxide of in a corundum crystal structure claim 1 , preferably a rhombohedral corundum structure.9. A transparent p-type conducting CrOin rhombohedral corundum structure claim 1 , doped with magnesium and nitrogen.10. A film of material as claimed in formed on a substrate with the ...

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Номер записи: 39

18-03-2021 дата публикации

SYNTHESIS OF MIXED METAL CHALCOGENIDES USING SOLID PHASE METHOD

Номер: US20210078871A1

Автор: Enhessari Morteza, Khoobi Asma, Salehabadi Ali

Принадлежит: Naragh branch,Islamic Azad University

An exemplary method for producing a mixed metal chalcogenide under atmospheric pressure may include forming a reaction mixture by mixing a first metal chalcogenide and a second metal chalcogenide. An exemplary method may further include pouring a first layer of NaCl within a reactor, where an exemplary reactor may include a container and a cap. Pouring an exemplary first layer of NaCl within an exemplary reactor may include pouring an exemplary first layer of NaCl on an exemplary base end of an exemplary container of the exemplary reactor. An exemplary method may further include pouring an exemplary reaction mixture into an exemplary container on top of an exemplary first layer of NaCl, pouring a second layer of NaCl into an exemplary container on top of an exemplary reaction mixture, sealing an exemplary container by closing an exemplary cap and pouring molten NaCl on top of the exemplary cap, and heating an exemplary reactor at a predetermined temperature for a predetermined time. 1. A method for producing a mixed metal chalcogenide under atmospheric pressure , the method comprising:forming a reaction mixture by mixing a first metal chalcogenide and a second metal chalcogenide;pouring a first layer of NaCl within a reactor, the reactor comprising a container and a cap, pouring the first layer of NaCl within the reactor comprising pouring the first layer of NaCl on a base end of the container;pouring the reaction mixture into the container on top of the first layer of NaCl;pouring a second layer of NaCl into the container on top of the reaction mixture;sealing the container by closing the cap and pouring molten NaCl on top of the cap; andheating the reactor at a predetermined temperature for a predetermined time.2. The method of claim 1 , wherein forming the reaction mixture further comprises:mixing NaCl with the first metal chalcogenide and the second metal chalcogenide with a molar ratio of (NaCl:the first metal chalcogenide:the second metal chalcogenide) between ...

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Номер записи: 40

24-03-2022 дата публикации

METAL OXIDE NANOPARTICLES AS FILLABLE HARDMASK MATERIALS

Номер: US20220093399A1

Автор: CHANDHOK Manish, Gstrein Florian, KRYSAK Marie

Принадлежит:

A dielectric composition including a metal oxide particle including a diameter of 5 nanometers or less capped with an organic ligand at at least a 1:1 ratio. A method including synthesizing metal oxide particles including a diameter of 5 nanometers or less; and capping the metal oxide particles with an organic ligand at at least a 1:1 ratio. A method including forming an interconnect layer on a semiconductor substrate; forming a first hardmask material and a different second hardmask material on the interconnect layer, wherein at least one of the first hardmask material and the second hardmask material is formed over an area of interconnect layer target for a via landing and at least one of the first hardmask material and the second hardmask material include metal oxide nanoparticles; and forming an opening to the interconnect layer selectively through one of the first hardmask material and the second hardmask material. 1. A method comprising:synthesizing metal oxide particles comprising a diameter of 5 nanometers or less; andcapping the metal oxide particles with an organic ligand at at least a 1:1 ratio.2. The method of claim 1 , wherein synthesizing comprises a sol gel synthesis.3. The method of claim 1 , wherein synthesizing comprises reducing a metal halide.4. The method of claim 1 , wherein the metal oxide particles comprise a metal selected from hafnium claim 1 , zirconium claim 1 , titanium claim 1 , aluminum and tin.5. The method of claim 1 , wherein the organic ligand comprises a carbonyl group claim 1 , C(O).6. The method of claim 5 , wherein the organic ligand comprises the formula claim 5 , —C(O)R claim 5 , wherein R is C1-C5.7. The method of claim 1 , further comprising dispersing the capped metal oxide particles in a casting solvent.8. The method of claim 8 , further comprising depositing the dispersed capped metal oxide particles on a semiconductor substrate and thermally curing to a metal oxide film on the semiconductor substrate.9. A method ...

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Номер записи: 41

26-03-2015 дата публикации

ULTRA-THIN AZO WITH NANO-LAYER ALUMINA PASSIVATION

Номер: US20150083461A1

Автор: Burberry Mitchell Stewart, Tutt Lee William

Принадлежит:

An electrical conductor includes an ultra-thin layer of aluminum-doped zinc-oxide and a nano-layer of alumina in contact and conformal with a surface of the ultra-thin aluminum-doped zinc-oxide layer. 1. An electrical conductor , comprising:an ultra-thin layer including aluminum-doped zinc-oxide; anda nano-layer including alumina in contact and conformal with a surface of the ultra-thin layer including aluminum-doped zinc oxide.2. The electrical conductor of claim 1 , wherein the ultra-thin layer including aluminum-doped zinc oxide has a thickness less than or equal to 100 nm.3. The electrical conductor of claim 2 , wherein the ultra-thin layer including aluminum-doped zinc oxide has a thickness less than or equal to 50 nm.4. The electrical conductor of claim 1 , wherein the nano-layer including alumina has a thickness less than or equal to 5 nm.5. The electrical conductor of claim 4 , wherein the nano-layer including alumina has a thickness less than or equal to 3 nm.6. The electrical conductor of claim 1 , further including an electrical contact in electrical communication with the ultra-thin layer including aluminum-doped zinc oxide through the nano-layer including alumina.7. The electrical conductor of claim 6 , wherein the electrical resistance between the electrical contact and the ultra-thin layer including aluminum-doped zinc oxide is less than or equal to 2 claim 6 ,000 ohms.8. The electrical conductor of claim 7 , wherein the electrical resistance between the electrical contact and the ultra-thin layer including aluminum-doped zinc oxide is less than or equal to 1 claim 7 ,000 ohms.9. The electrical conductor of claim 8 , wherein the electrical resistance between the electrical contact and the ultra-thin layer including aluminum-doped zinc oxide is less than or equal to 500 ohms.10. The electrical conductor of claim 1 , wherein the sheet resistance of the ultra-thin layer including aluminum-doped zinc oxide is less than or equal to 10 claim 1 ,000 ohms per ...

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Номер записи: 42

24-03-2016 дата публикации

PREPARATION METHOD FOR METALLIC OXIDE SPHERICAL CASCADE STRUCTURE

Номер: US20160083263A1

Автор: CHEN YANFENG, LIU Zhi, Wang Chao, ZHU MINGWEI

Принадлежит:

A preparation method for a metallic oxide micro-nano spherical cascade structure, belonging to the field of nanometer/micrometer microstructure material and a preparation thereof is provided. The metallic oxide spherical cascade structure of the present invention refers to a micron-sized spherical particle structure composed of metallic oxide powder having a particle size of tens of nanometers. The preparation method is as follows: uniformly mixing the metallic oxide powder and polyethylene glycol by ball-milling to obtain mixed powder of the metallic oxide and the polyethylene glycol; preparing slurry from the resulting powder, stirring uniformly, and then drying the slurry to obtain a film or bulk on a substrate; and removing by calcining organic compounds to obtain a film or bulk of the metallic oxide spherical cascade structure. 1. A preparation method for a metallic oxide spherical cascade structure , comprising the following steps of:(1) uniformly mixing a metallic oxide powder and polyethylene glycol by ball-milling to obtain a mixed powder of the metallic oxide and the polyethylene glycol;(2) preparing a slurry from the aforementioned powder, stirring uniformly, and then drying the slurry to obtain a film or bulk on a substrate; and(3) removing organic compounds by calcining to obtain a film or bulk of the metallic oxide spherical cascade structure.2. The preparation method for a metallic oxide spherical cascade structure according to claim 1 , wherein the spherical cascade structure refers to a micro-nano secondary structure which is a micron-sized spherical particle structure composed of metallic oxide powder having a particle size of 2 to 100 nanometers.3. The preparation method for a metallic oxide spherical cascade structure according to claim 1 , wherein the metallic oxide is TiO claim 1 , FeO claim 1 , AlO claim 1 , SiOor SnO.4. The preparation method for a metallic oxide spherical cascade structure according to claim 1 , wherein claim 1 , in the step ...

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Номер записи: 43

24-03-2016 дата публикации

CONDUCTIVE FILM AND ELECTRONIC DEVICE HAVING CONDUCTIVE FILM

Номер: US20160086683A1

Автор: HARA Tsutomu, Nagamoto Koichi, Naganawa Satoshi

Принадлежит:

Provided are a conductive film which is excellent in hygrothermal characteristics and has excellent bending performance, and an electronic device having such a conductive film. 1. A conductive film obtained by forming , on one surface or both surfaces of a substrate , a zinc tin oxide layer and a transparent conductive film that is formed of zinc oxide other than the zinc tin oxide sequentially from the substrate side.2. The conductive film according to claim 1 , wherein a thickness of the zinc tin oxide layer is 5 to 500 nm.3. The conductive film according to claim 1 , wherein a thickness of the zinc oxide-based transparent conductive film is 5 to 1000 nm.4. The conductive film according to claim 1 , wherein a water-vapor transmittance rate of the zinc tin oxide layer is 0.1 g/(m·day) or less.51222121. The conductive film according to claim 1 , wherein when a surface resistivity of the conductive film before bending is designated as R claim 1 , a surface resistivity of the conductive film after bending of the conductive film using an acrylic round bar having a diameter of 6 mm with the zinc oxide-based transparent conductive film facing inward for 30 seconds is designated as R claim 1 , and a surface resistivity of the conductive film after bending of the conductive film using an acrylic round bar having a diameter of 8 mm with the zinc oxide-based transparent conductive film facing outward for 30 seconds is designated as R′ claim 1 , both of R/R and R′/R are a value of 1.5 or less.6. The conductive film according to claim 1 , wherein the substrate is formed of at least one selected from the group consisting of polyesters claim 1 , polyimides claim 1 , polyamides claim 1 , and cycloolefin-based polymers.7. The conductive film according to claim 1 , wherein the zinc tin oxide layer contains zinc at a value within the range of 1 to 49 atom % claim 1 , and tin at a value within the range of 1 to 30 atom % relative to the total amount of 100 atom % of zinc claim 1 , ...

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Номер записи: 44

25-03-2021 дата публикации

SOLAR CELL

Номер: US20210091323A1

Автор: Matsui Taisuke, YOKOYAMA TOMOYASU

Принадлежит:

The present disclosure provides a solar cell including a first electrode, a second electrode, a photoelectric conversion layer disposed between the first electrode and the second electrode, and an electron transport layer disposed between the first electrode and the photoelectric conversion layer. At least one of the first electrode and the second electrode has a light-transmitting property. The photoelectric conversion layer contains a perovskite compound composed of a monovalent cation, a Sn cation, and a halogen anion. The electron transport layer contains an electron transport material containing niobium oxide. The niobium oxide is amorphous. The electron transport material has a conduction band at a bottom of which an energy level with respect to a vacuum level is greater than −3.9 eV and less than −3.1 eV. 1. A solar cell comprising:a first electrode;a second electrode;a photoelectric conversion layer disposed between the first electrode and the second electrode; andan electron transport layer disposed between the first electrode and the photoelectric conversion layer,wherein at least one of the first electrode and the second electrode has a light-transmitting property,the photoelectric conversion layer contains a perovskite compound composed of a monovalent cation, a Sn cation, and a halogen anion,the electron transport layer contains an electron transport material containing niobium oxide,the niobium oxide is amorphous, andan energy level at the bottom of the conduction band of the electron transport material is greater than −3.9 eV and less than −3.1 eV with respect to a vacuum level.2. The solar cell according to claim 1 ,wherein the electron transport layer has a thickness of greater than or equal to 8 nm and less than or equal to 350 nm.3. The solar cell according to claim 2 ,wherein the electron transport layer has a thickness of greater than or equal to 10 nm and less than or equal to 350 nm.4. The solar cell according to claim 3 ,wherein the electron ...

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Номер записи: 45

09-04-2015 дата публикации

SINTERED OXIDE COMPACT AND CIRCUIT BOARD USING SAME

Номер: US20150099142A1

Автор: Hishida Tomoko, KOZUKA Hisashi, OHBAYASHI Kazushige, Yamada Hideto

Принадлежит:

Provided is a sintered oxide compact that has high electric conductivity and a small B-value (temperature coefficient), and is suitable for use as an electrically conductive material, and a circuit board that uses the sintered oxide compact. The sintered oxide compact is represented by a composition formula: REaCobNicOx (where RE represents a rare earth element, a+b+c=1, and 1.3≦x≦1.7), the sintered oxide compact includes a perovskite phase with a perovskite-type oxide crystal structure, and the a, b, and c satisfy the following relationships: 1. A sintered oxide compact:wherein the sintered oxide compact is represented by a composition formula: REaCobNicOx (where RE represents a rare earth element, a+b+c=1, and 1.3≦x≦1.7);wherein the sintered oxide compact comprises a perovskite phase with a perovskite-type oxide crystal structure; [{'br': None, 'i': '≦a≦', '0.4740.524,'}, {'br': None, 'i': '≦b≦', '0.2000.475, and'}, {'br': None, 'i': '≦c≦', '0.0250.300; and'}], 'wherein the a, b, and c satisfy the following relationships{'sub': 4', '3', '10', '4', '3', '10, 'wherein the sintered oxide compact further comprises RECoOor RENiOin addition to the perovskite phase.'}2. The sintered oxide compact according to claim 1 ,wherein the RE is La.3. (canceled)4. The sintered oxide compact according to claim 1 ,wherein the RE is La, and [{'br': None, 'i': '≦b≦', '0.2000.375, and'}, {'br': None, 'i': '≦c≦', '0.1250.300.'}], 'wherein the b and c satisfy the following relationships5. (canceled)6. The sintered oxide compact according to claim 1 ,wherein the sintered oxide compact contains substantially no alkali earth metal element.7. A circuit board in which the sintered oxide compact is formed as an electrically conductive layer on a surface of an insulating substrate.8. The sintered oxide compact according to claim 1 ,wherein the sintered oxide compact is produced by performing firing at 1250 to 1450° C. for 1 to 5 hours under air atmosphere or oxygen atmosphere.9. An electric ...

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Номер записи: 46

20-04-2017 дата публикации

ELECTRICAL CONDUCTORS, PRODUCTION METHODS THEREOF, AND ELECTRONIC DEVICES INCLUDING THE SAME

Номер: US20170110213A1

Автор: HWANG Sungwoo, JUNG Doh Won, Kim Se Yun, KWAK Chan, LEE Jongmin, Lee Woojin, ROH Jong Wook

Принадлежит:

An electrical conductor includes: a first conductive layer including a plurality of ruthenium oxide nanosheets, wherein at least one ruthenium oxide nanosheet of the plurality of ruthenium oxide nanosheets includes a halogen, a chalcogen, a Group 15 element, or a combination thereof on a surface of the ruthenium oxide nanosheet. 1. An electrical conductor comprising:a first conductive layer comprising a plurality of ruthenium oxide nanosheets, wherein at least one ruthenium oxide nanosheet of the plurality of ruthenium oxide nanosheets are surface-doped with any of a halogen, a chalcogen, a Group 15 element, and a combination thereof.2. The electrical conductor of claim 1 , wherein the halogen comprises F claim 1 , Cl claim 1 , Br claim 1 , I claim 1 , or a combination thereof claim 1 , the chalcogen comprises S claim 1 , Se claim 1 , Te claim 1 , or a combination thereof claim 1 , and the Group 15 element comprises N claim 1 , P claim 1 , As claim 1 , or a combination thereof.3. The electrical conductor of claim 1 , wherein the halogen claim 1 , the chalcogen claim 1 , or the Group 15 element is present as an ionic species claim 1 , a surface-bound reactive group claim 1 , an oxyhalide claim 1 , an oxy chalcogenide claim 1 , or a combination thereof.4. The electrical conductor of claim 1 , wherein the electrical conductor further comprises a second conductive layer that is disposed on a first surface of the first conductive layer claim 1 , andwherein the second conductive layer comprises a plurality of conductive metal nanowires.5. The electrical conductor of claim 4 , wherein the plurality of conductive metal nanowires comprises silver claim 4 , copper claim 4 , gold claim 4 , aluminum claim 4 , cobalt claim 4 , palladium claim 4 , or a combination thereof.6. The electrical conductor of claim 4 , wherein the plurality of conductive metal nanowires have an average diameter of less than or equal to about 50 nanometers and an average length of greater than or equal ...

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Номер записи: 47

11-04-2019 дата публикации

POLYMER DISPERSED LIQUID CRYSTAL FILM FOR VEHICLES AND A VEHICLE INCLUDING THE SAME

Номер: US20190107744A1

Автор: Eo Moon Jung, YUN Hee Young

Принадлежит:

A polymer dispersed liquid crystal film for vehicles includes an electrode unit, a first electrode provided on the electrode unit, a polymer layer provided between the electrode unit and the first electrode, and a plurality of liquid crystal molecules dispersed in the polymer layer. The electrode unit includes a resin layer and a mesh-type second electrode inserted into the resin layer. The upper surface of the second electrode is exposed to the outside of the resin layer. 1. A polymer dispersed liquid crystal film for vehicles , comprising:an electrode unit;a first electrode provided on the electrode unit;a polymer layer provided between the electrode unit and the first electrode; anda plurality of liquid crystal molecules dispersed in the polymer layer, a resin layer; and', 'a mesh-type second electrode inserted into the resin layer,, 'wherein the electrode unit includeswherein an upper surface of the second electrode is exposed to outside of the resin layer, and first liquid crystal molecules arranged in a first direction, when a voltage is applied between the first electrode and the second electrode;', 'second liquid crystal molecules arranged in a second direction intersecting the first direction when the voltage is applied between the first electrode and the second electrode; and', 'third liquid crystal molecules arranged in a thickness direction of the polymer dispersed liquid crystal film for vehicles, when the voltage is applied between the first electrode and the second electrode, the thickness direction intersecting with the first direction and the second direction., 'wherein the plurality of liquid crystal molecules include2. The polymer dispersed liquid crystal film for vehicles of claim 1 , wherein a lower surface of the second electrode is disposed within the resin layer.3. The polymer dispersed liquid crystal film for vehicles of claim 1 , wherein claim 1 , when the voltage is applied between the first electrode and the second electrode claim 1 , the ...

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Номер записи: 48

07-05-2015 дата публикации

TRANSPARENT CONDUCTIVE FILM INCLUDING HYBRID UNDERCOATING LAYER, METHOD FOR MANUFACTURING SAME, AND TOUCH PANEL USING SAME

Номер: US20150125690A1

Автор: Kim Won-Kook, Kwon Dong-Joo, Ryu Mu-Seon, SEO Ji-Yeon

Принадлежит:

Disclosed is a transparent conductive film for a touch panel that uses a single hybrid undercoating layer so as to be capable of index matching and has excellent barrier properties. The conductive film according to the present invention includes: a transparent base material; said hybrid undercoating layer, which is formed on the transparent base material, which consists of an inorganic network/organic network hybrid polymer, which has a refractive index of between 1.55 and 1.7, and which has a thickness of between 10 nm and 1.5 μm; and a transparent conductive layer which is formed on the hybrid undercoating layer. Compared to the transparent conductive films of the prior art, the present invention has significantly higher productivity, has excellent barrier properties, and exhibits stable index matching. 1. A transparent conductive film comprising:a transparent substrate;{'b': '82', 'a hybrid undercoating layer, which is placed above the transparent substrate, being formed of a hybrid polymer of inorganic network and organic network, and having an index of refraction from 1.55 to 1.7 and a thickness from 10 nm to 1.5 m; and'}a transparent conductive layer formed above the hybrid undercoating layer.2. The transparent conductive film according to claim 1 , wherein the inorganic network comprises a metal alkoxide and silicon (Si) alkoxide.3. The transparent conductive film according to claim 2 , wherein the metal alkoxide comprises at least one of zirconium (Zr) alkoxide and titanium (Ti) alkoxide.4. The transparent conductive film according to claim 1 , wherein the organic network comprises a polymerizable compound.5. The transparent conductive film according to claim 4 , wherein the polymerizable compound comprises at least one of thermally polymerizable or photopolymerizable monomers claim 4 , oligomers and polymers having at least one functional group.6. The transparent conductive film according to claim 1 , wherein the transparent substrate is a monolayer or ...

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Номер записи: 49

05-05-2016 дата публикации

SYNTHESIS OF CsSnI3 BY A SOLUTION BASED METHOD

Номер: US20160122634A1

Автор: Ren Yuhang, Shu Kai, YU Chunhui, ZHANG Jin

Принадлежит: Sun Harmonics, Ltd

This invention discloses a solution based synthesis of cesium tin tri-iodide (CsSnI). More specifically, the CsSnIis fabricated in an organic Perovskite precursor solvent. CsSnIare ideally suited for a wide range of applications such as light emitting and photovoltaic devices. 1. A process of forming CsSnIpowder , comprising the steps of:(a) forming a CsI solution by dissolving CsI powder of purity equal to 99.999% in an organic solvent consisting of at least one of N,N-dimethylformamide (DMF), γ-butyrolactone (GBL) and mixtures thereof;{'sub': 2', '2, '(b) forming a SnIsolution by dissolving SnIpowder of purity equal to 99% in an organic solvent consisting of at least one of N,N-dimethylformamide (DMF), γ-butyrolactone (GBL) and mixtures thereof;'}{'sub': 2', '2, '(c) adding the SnIsolution into the CsI solution to form a composite solution wherein the molar ratio of the SnIand CsI in said composite solution is approximately 1:1;'}{'sub': '3', '(d) stirring said composite solution for at least one hour to obtain a homogeneous CsSnIprecursor solution;'}(e) aging said precursor solution at least for a predetermined time period after said stirring step;{'sub': 3', '3', '3', '2', '6, '(f) heating said precursor solution following said aging step at a temperature within the range of 50° C. to 250° C. until all the solvent is evaporated to form CsSnIpowder exhibiting an XRD diffraction peak pattern for CsSnIcorresponding to the standard XRD-PDF card (43-1162) for the B-gamma-CsSnIphase without exhibiting an XRD diffraction peak pattern for CsSnI; and'}(g) the process steps (a) to (f) are performed in a substantially inert environment including a protective gas and water vapor and oxygen each at a level below 1 ppm.2. The process of claim 1 , wherein said substantially inert environment is created within a glove box.31. The process of claim () claim 1 , wherein said precursor solution is aged for 12 to 24 hours to form a homogeneous CsSnIprecursor solution.4. The process ...

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Номер записи: 50

05-05-2016 дата публикации

CORE-SHELL NANO PARTICLE FOR FORMATION OF TRANSPARENT CONDUCTIVE FILM, AND MANUFACTURING METHOD OF TRANSPARENT CONDUCTIVE FILM USING THE SAME

Номер: US20160125970A1

Автор: JUNG Jinmi, SHIN Bugon, Yoon Seokhee, YOON Seokhyun

Принадлежит: LG CHEM, LTD.

Disclosed herein are a core-shell nano particle for formation of a transparent conductive film, a manufacturing method of the core-shell nano particle, and a manufacturing method of a transparent conductive film using the core-shell nano particle and, more particularly, a core-shell structured nano particle consisting of a core including indium or indium oxide and a shell including tin, a manufacturing method of the core-shell structured nano particle, and a manufacturing method of a transparent conductive film including (i) dispersing a core-shell structured nano particle into a solvent to manufacture a coating liquid, (ii) applying the coating liquid onto a substrate to form a coating layer, (iii) drying the coating layer, and (iv) performing an annealing process on the coating layer. 1. A core-shell structured nano particle consisting of a core comprising indium or indium oxide and a shell comprising tin.2. The core-shell structured nano particle according to claim 1 , wherein the core-shell structured nano particle has a particle diameter of 10 nanometer to 100 nanometer and the core has a particle diameter of 8 nanometer to 97 nanometer within a range of 80% to 97% the particle diameter of the entirety of the nano particle.3. The core-shell structured nano particle according to claim 1 , wherein the shell comprises at least one kind of dopant selected from a group consisting of tin claim 1 , gallium claim 1 , aluminum claim 1 , titanium claim 1 , niobium claim 1 , tantalum claim 1 , tungsten claim 1 , molybdenum claim 1 , and antimony.4. A composition method of a core-shell structured nano particle according to claim 1 , the composition method comprising:(i) preparing a first solution comprising a reducing agent;(ii) preparing a second solution comprising indium (In) salt;(iii) dropwise adding the first solution to the second solution such that the first solution and the second solution are reacted with each other;(iv) composing an indium (In) or indium oxide ( ...

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Номер записи: 51

27-05-2021 дата публикации

Carbon Nanotube Enhanced Silver Paste Thermal Interface Material

Номер: US20210159144A1

Автор: Chen Shuyi, Lin Zhigang, Tan Chunhu

Принадлежит:

A high performance, lead free, Ag paste thermal interface material (TIM) for die attachment and substrate bonding in electronic packaging includes: (i) multiscale silver particles, (ii) metal-coated carbon nanotubes (CNTs), (iii) a polymer, and (iv) a liquid carrier. The multiscale silver particles and metal-coated carbon nanotubes, which function as hybrid filler components, are uniformly dispersed within the TIM composition. The sintered TIM exhibits high density, high mechanical strength, and high thermal conductivity. The components of the liquid carrier including the solvent, binder, surfactants, and thinner are completely evaporated or burned off during sintering. Sintering of the TIM can be conducted at a relatively low temperature, without or with very low (<0.1 MPa) pressure, in open air and without vacuum or inert gas protection. The TIM can be utilized in substrate bonding not only on conventional metal-plated surfaces but also bare Cu substrate surfaces. 1. A thermal interface material composition that comprises: (i) multiscale silver particles , (ii) metal-coated carbon nanotubes , (iii) a polymer , and (iv) liquid carrier.2. The thermal interface material composition of wherein the multiscale silver particles comprise nano-size silver particles with diameters between 10-100 nm claim 1 , submicron-size silver particles with diameters between 0.1-1 μm claim 1 , and micron-size silver particles with diameters between 1-10 μm.3. The thermal interface material composition of wherein the weight ratio of nano-size silver particles claim 2 , submicron-size silver particles claim 2 , and micron-size silver particles is (1-5) to (1-9) to (1-9) claim 2 , respectively.4. The thermal interface material composition of further comprising Sn nanoparticles.5. The thermal interface material composition of wherein the metal-coated carbon nanotubes comprise carbon nanotubes that are coated with metal particles with diameters that range from 5 to 20 nm.6. The thermal ...

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Номер записи: 52

21-05-2015 дата публикации

APPARATUS FOR SYNTHETISING TIN DIOXIDE NANOPARTICLES AND METHOD FOR PRODUCING TIN DIOXIDE NANOPARTICLES

Номер: US20150139894A1

Автор: Fontanez Diego Manuel Ferreira Lusquinos, Moura Francisco Jose

Принадлежит:

The following invention relates to a novel and efficient nanoparticles synthesis reactor and process production. More particularly, the present invention is applied to the synthesis of nanostructured tin dioxide. The benefits provided by the invention can be seen in various gaseous reactions where occurs the formation of solid and gaseous phases. 1. A nanoparticles synthesis reactor comprising:a tubular section provided with an inlet, a gas distributor, which has a circular shape provided with an inlet, baffles and orifices;said tubular section is provided with a tubular region of reaction, a powder collector which has an outlet;wherein the orifices provide the perpendicular interaction among the reagents flows; {'br': None, 'i': A', 'B', 'C', 'D, '(g)+(g)→(s)+(g).'}, 'wherein the baffles provide means for the optimization of the gas flow around the reactor where the reagents flow, so that the following reaction will occur2. The reactor according to claim 1 , characterized as being used for the tin dioxide nanoparticles synthesis (SnO) using water vapor.3. The reactor according to claim 1 , characterized by the fact that A(g)=SnCl(g); B(g)=HO; C(s)=SnO(s); D(g)=HCl(g).4. The reactor according to claim 2 , characterized as being capable of maintaining the reaction temperature approximately 200° C.5. The reactor according to claim 1 , characterized by the fact that it provides the particle size reduction of the synthesized solids claim 1 , optimizing reaction conversion; temperature and/or reaction time.6. A tin dioxide nanoparticle production process comprising the following steps:(i) providing a distributor with water vapor through an inlet;(ii) optimizing water vapor flow through baffles;(iii) distributing the water vapor flow, uniformly, through orifices around a tubular section where tin tetrachloride gas flows.(iv) providing a tubular section with tin tetrachloride gas through an the inlet;(v) providing a perpendicular interaction between the tin tetrachloride ...

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Номер записи: 53

19-05-2016 дата публикации

ITO FILM, ITO POWDER USED IN MANUFACTURING SAME ITO FILM, MANUFACTURING METHOD OF ITO POWDER, AND MANUFACTURING METHOD OF ITO FILM

Номер: US20160137522A1

Автор: Takenoshita Ai, Yamasaki Kazuhiko, Yonezawa Takehiro

Принадлежит:

An ITO film having a band gap in a range of 4.0 eV to 4.5 eV. 1. (canceled)2. An ITO powder used in manufacture of an ITO film having: a band gap in a range of 4.0 eV to 4.5 eV; and an L*a*b* color tone in which L* is from 99.5 to 99.7 , a* is from −0.35 to −0.17 , and b* is from −0.24 to −0.06 , the ITO powder comprising a perse color tone L*a*b* in which L* is 30 or less , a* is less than 0 , and b* is less than 0.312-. (canceled)13. The ITO powder according to claim 2 , wherein a BET specific surface area of the ITO powder is 20 to 100 m/g.14. The ITO powder according to claim 2 , wherein a crystal particle size of the ITO powder determined by X-ray diffraction (XRD) is 5 to 30 nm. 1. Field of the InventionThe present invention relates to an ITO film having high optical transmittance in a visible light region, ITO powder used in manufacture of the same ITO film, a manufacturing method of the ITO powder, and a manufacturing method of an ITO film. In the present specification, ITO refers to Indium Tin Oxide.Priority is claimed on Japanese Patent Application No. 2012-132483, filed on Jun. 12, 2012, the content of which is incorporated herein by reference.2. Description of Related ArtAn indium tin oxide film (hereafter referred to as ITO film) used in the conventional art has a band gap of about 3.75 eV and high transparency in the wavelength range of visible light (for example, see Paragraph [0009] of Japanese Unexamined Patent Application, First Publication No. 2009-032699). Therefore, the ITO film has been widely used in a field requiring excellent optical characteristics such as application as a transparent electrode of a liquid crystal display (for example, see Paragraph [0006] of Japanese Unexamined Patent Application, First Publication No. 2005-054273) or a heat shielding material having high heat shielding performance (for example, see Paragraph [0002] of Japanese Unexamined Patent Application, First Publication No. 2011-116623).Although the conventional ITO ...

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Номер записи: 54

07-08-2014 дата публикации

HIGH SURFACE AREA, ELECTRICALLY CONDUCTIVE NANOCARBON-SUPPORTED METAL OXIDE

Номер: US20140217330A1

Автор: Baumann Theodore F., Cervantes Octavio, Gash Alexander E., Han Thomas Yong-Jin, JR. Joe H., Kuntz Joshua D., Satcher, WORSLEY Marcus A.

Принадлежит:

A metal oxide-carbon composite includes a carbon aerogel with an oxide overcoat. The metal oxide-carbon composite is made by providing a carbon aerogel, immersing the carbon aerogel in a metal oxide sol under a vacuum, raising the carbon aerogel with the metal oxide sol to atmospheric pressure, curing the carbon aerogel with the metal oxide sol at room temperature, and drying the carbon aerogel with the metal oxide sol to produce the metal oxide-carbon composite. The step of providing a carbon aerogel can provide an activated carbon aerogel or provide a carbon aerogel with carbon nanotubes that make the carbon aerogel mechanically robust. 17-. (canceled)8. A metal oxide-carbon composite , comprising:a carbon aerogel, said carbon aerogel having inner surfaces, andan oxide coating said inner surfaces of said carbon aerogel providing a metal oxide-carbon composite.9. The metal oxide-carbon composite of wherein said carbon aerogel is a carbon aerogel with carbon nanotubes that make said carbon aerogel mechanically robust.10. The metal oxide-carbon composite of wherein said carbon aerogel is an activated carbon aerogel.11. The metal oxide-carbon composite of wherein said oxide is titanium oxide.12. The metal oxide-carbon composite of wherein said oxide is a metal oxide including a metal selected from the group consisting of manganese claim 8 , iron claim 8 , cobalt claim 8 , nickel claim 8 , copper claim 8 , zinc claim 8 , zirconium claim 8 , aluminum claim 8 , silicon claim 8 , and tin.13. A metal oxide-carbon composite claim 8 , comprising:a carbon aerogel with carbon nanotubes that make said carbon aerogel mechanically robust, said carbon aerogel having inner surfaces, andan oxide coating said inner surfaces of said carbon aerogel providing an metal oxide-carbon composite.14. A metal oxide-carbon composite claim 8 , comprising:an activated carbon aerogel, said activated carbon aerogel having inner surfaces, andan oxide coating said inner surfaces of said activated ...

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Номер записи: 55

17-05-2018 дата публикации

System and Method for Improving Touchscreen Operability

Номер: US20180136753A1

Автор: LUO Xiangyu

Принадлежит:

An apparatus for improving touchscreen operability and methods for making and using the same. The apparatus comprises a sheet for attaching to a touchscreen. The sheet includes a functional sense region for cooperating with a functional region of the touchscreen and a functional activation region for manipulation by a user. The functional activation region can be disposed on a nonfunctional space adjacent to the touch panel, such as an area adjacent to a home button of a smartphone. Thereby, a predetermined smartphone function associated with a distal functional region of the touchscreen can be initiated via manipulation of the functional activation region, rather than activation of the functional sense region of the touchscreen. Thereby, the apparatus advantageously can enable a user of the smartphone to initiate the predetermined smartphone function associated with the distal functional region of the touchscreen in a more convenient manner, enabling single-handed operation of the smartphone. 1. An apparatus for initiating a predetermined touchscreen function associated with a functional region of a touchscreen , comprising:a functional sense region for cooperating with the functional region of the touchscreen; anda functional activation region for activating the predetermined touchscreen function via the functional sense region.2. The apparatus of claim 1 , wherein said functional sense region is distal from said function sense region.3. The apparatus of claim 1 , wherein said functional sense region is disposed on a transparent sheet claim 1 , and wherein said functional activation region is disposed on the transparent sheet or on a protective shell.4. The apparatus of claim 1 , wherein said functional sense region and said functional activation region are covered with a conductive material.5. The apparatus of claim 1 , wherein said functional sense region at least partially covers the functional region.6. The apparatus of claim 4 , wherein the conductive ...

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Номер записи: 56

14-08-2014 дата публикации

LaNiO3 THIN FILM-FORMING COMPOSITION AND METHOD OF FORMING LaNiO3 THIN FILM USING THE SAME

Номер: US20140227433A1

Автор: Fujii Jun, Sakurai Hideaki, Soyama Nobuyuki

Принадлежит: MITSUBISHI MATERIALS CORPORATION

A LaNiOthin film having extremely few voids is uniformly formed. Provided is a LaNiOthin film-forming composition for forming a LaNiOthin film. It includes: a LaNiOprecursor; a first organic solvent; a stabilizer; and a second organic solvent. The first organic solvent includes carboxylic acids, alcohols, esters, ketones, ethers, cycloalkanes, aromatic compounds, or tetrahydrofuran. The stabilizer includes β-diketones, β-ketones, β-keto esters, oxyacids, diols, triols, carboxylic acids, alkanolamines, or polyvalent amines. The second organic solvent has a boiling point of 150° C. to 300° C. and a surface tension of 20 to 50 dyn/cm. The LaNiOprecursor content is 1 to 20 mass % with respect to 100 mass % of the composition. The stabilizer content is 0 to 10 mol with respect to 1 mol of a total amount of the LaNiOprecursors. The second organic solvent content is 5 to 20 mass % with respect to the composition. 1. A LaNiOthin film-forming composition for forming a LaNiOthin film , the composition comprising:{'sub': '3', 'LaNiOprecursors;'}one or more first organic solvents selected from the group consisting of carboxylic acids, alcohols, esters, ketones, ethers, cycloalkanes, aromatic compounds, and tetrahydrofuran;one or more stabilizers selected from the group consisting of β-diketones, β-ketones, β-keto esters, oxyacids, diols, triols, carboxylic acids, alkanolamines, and polyvalent amines; anda second organic solvent having a boiling point of 150° C. to 300° C. and a surface tension of 20 dyn/cm to 50 dyn/cm,{'sub': '3', 'wherein a ratio of the LaNiOprecursors is 1 mass % to 20 mass % in terms of oxides with respect to 100 mass % of the composition,'}{'sub': '3', 'a ratio of the stabilizer is greater than 0 mol and less than or equal to 10 mol with respect to 1 mol of a total amount of the LaNiOprecursors in the composition, and'}a ratio of the second organic solvent is 5 mass % to 20 mass % with respect to 100 mass % of the composition.2. The LaNiOthin film-forming ...

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Номер записи: 57

14-08-2014 дата публикации

CONDUCTIVE LAYER AND PREPARATION METHOD FOR CONDUCTIVE LAYER

Номер: US20140227560A1

Автор: SON Phil Kook

Принадлежит: LG CHEM, LTD.

Provided are a conductive layer and a method of manufacturing the same. The conductive layer is formed without, so called, a high temperature process but has suitable crystallinity, excellent transparency and excellent resistance characteristic, and the method of manufacturing the same is also provided. 1. A conductive layer that has a peak at (222) or (400) plane in an X-ray diffraction (XRD) pattern and that is formed on a surface , of which a contact angle at a room temperature with respect to distilled water is 75 degrees or more.2. The conductive layer according to claim 1 , wherein the peak at the (222) plane has an intensity of 100 AU or more.3. The conductive layer according to claim 1 , wherein the peak at the (400) plane has an intensity of 100 AU or more.4. The conductive layer according to claim 1 , wherein the contact angle of the surface is 80 degrees or more.5. The conductive layer according to claim 1 , which has an optical transmittance with respect to at least one wavelength in the visible region of 80% or more.6. The conductive layer according to claim 1 , which includes indium oxide.7. The conductive layer according to claim 1 , which includes 85 to 95 parts by weight of indium oxide and 5 to 15 parts by weight of tin oxide.8. A conductive film claim 1 , comprising:a base layer having a surface contact angle of 75 degrees or more; anda conductive layer formed on a surface of the base layer having a contact angle of 75 degrees or more and having a peak at (222) or (400) plane in an X-ray diffraction (XRD) pattern.9. The film according to claim 8 , wherein the base layer is a plastic base layer.10. The film according to claim 8 , wherein the conductive layer is formed in contact with the surface having a contact angle of 75 degrees or more.11. A method of manufacturing a conductive layer claim 8 , comprisingforming a conductive layer on a surface having a contact angle of 75 degrees or more.12. The method according to claim 11 , wherein the surface ...

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Номер записи: 58

09-05-2019 дата публикации

NANOSTRUCTURE NETWORK AND METHOD OF FABRICATING THE SAME

Номер: US20190139680A1

Автор: Choa Yong-Ho, KWON Young Tae, RYU Seung Han

Принадлежит: Industry-University Cooperation Foundation Hanyang University ERICA Campus

Provided are a nanostructure network and a method of fabricating the same. The nanostructure network includes nanostructures having a poly-crystalline structure formed by self-assembly of the nanostructures. The method includes preparing a nanostructure solution in which nanostructures are dispersed in a first solvent, forming a nanostructure ink by adding the nanostructure solution into a second solvent having a viscosity higher than that of the first solvent, coating a surface of a substrate with the nanostructure ink, and forming a nanostructure network by evaporating the first solvent and the second solvent included in the nanostructure ink coated on the substrate. 1. A method of fabricating a nanostructure network , the method comprising:preparing a nanostructure solution in which nanostructures are dispersed in a first solvent;forming a nanostructure ink by adding the nanostructure solution into a second solvent having a viscosity higher than that of the first solvent;coating a surface of a substrate with the nanostructure ink; andforming a nanostructure network by evaporating the first solvent and the second solvent included in the nanostructure ink coated on the substrate.2. The method of claim 1 , wherein a vapor pressure of the first solvent is higher than a vapor pressure of the second solvent.3. The method of claim 1 , wherein the forming of the nanostructure ink comprises:adding an admixture for mixing the first solvent and the second solvent to the second solvent,wherein a vapor pressure of the admixture is higher than vapor pressures of the first solvent and the second solvent.4. The method of claim 3 , wherein the coating of the surface of the substrate with the nanostructure ink comprises:generating a coating layer in a liquid state on the substrate; anddividing the coating layer into a plurality of first droplets spaced apart from each other.5. The method of claim 4 , wherein the forming of the nanostructure network comprises:evaporating the ...

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Номер записи: 59

30-04-2020 дата публикации

ELECTRICAL CONDUCTORS, PRODUCTION METHODS THEREOF, AND ELECTRONIC DEVICES INCLUDING THE SAME

Номер: US20200135358A1

Автор: HWANG Sungwoo, JUNG Doh Won, Kim Se Yun, KWAK Chan, LEE Jongmin, Lee Woojin, ROH Jong Wook

Принадлежит:

An electrical conductor includes: a first conductive layer including a plurality of ruthenium oxide nanosheets, wherein at least one ruthenium oxide nanosheet of the plurality of ruthenium oxide nanosheets includes a halogen, a chalcogen, a Group 15 element, or a combination thereof on a surface of the ruthenium oxide nanosheet. 1. An electrical conductor comprising:a conductive layer comprising a plurality of ruthenium oxide nanosheets and a plurality of conductive metal nanowires,wherein at least one ruthenium oxide nanosheet of the plurality of ruthenium oxide nanosheets are surface-doped with any of a halogen, a chalcogen, a Group 15 element, and a combination thereof.2. The electrical conductor of claim 1 , wherein the halogen comprises F claim 1 , Cl claim 1 , Br claim 1 , I claim 1 , or a combination thereof claim 1 , the chalcogen comprises S claim 1 , Se claim 1 , Te claim 1 , or a combination thereof claim 1 , and the Group 15 element comprises N claim 1 , P claim 1 , As claim 1 , or a combination thereof.3. The electrical conductor of claim 1 , wherein the halogen claim 1 , the chalcogen claim 1 , or the Group 15 element is present as an ionic species claim 1 , a surface-bound reactive group claim 1 , an oxyhalide claim 1 , an oxy chalcogenide claim 1 , or a combination thereof.4. The electrical conductor of claim 1 , wherein the plurality of ruthenium oxide nanosheets have an average lateral size of greater than or equal to about 0.1 micrometers and less than or equal to about 100 micrometers claim 1 , and a thickness of less than or equal to about 3 nanometers.5. The electrical conductor of claim 1 , wherein the plurality of conductive metal nanowires comprises silver claim 1 , copper claim 1 , gold claim 1 , aluminum claim 1 , cobalt claim 1 , palladium claim 1 , or a combination thereof.6. The electrical conductor of claim 1 , wherein the plurality of conductive metal nanowires have an average diameter of less than or equal to about 50 nanometers and ...

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Номер записи: 60

10-06-2021 дата публикации

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20210175073A1

Автор: CHO Younjoung, CHOI Jiyu, PARK Gyu-hee, Ryu Seung-Min

Принадлежит:

A method of manufacturing a semiconductor device includes providing a metal precursor on a substrate, and providing a reactant and a co-reactant to form a metal nitride layer by reaction with the metal precursor, the reactant being a nitrogen source, the co-reactant being an organometallic compound represented by Chemical Formula 1: 2. The method as claimed in claim 1 , wherein M2 is Sn.3. The method as claimed in claim 1 , further comprising purging the co-reactant after providing the co-reactant to the metal precursor.4. The method as claimed in claim 1 , wherein the metal precursor includes a metal halide compound or an organometallic compound.5. The method as claimed in claim 1 , wherein the reactant includes one or more of NH claim 1 , NH claim 1 , or N.62. The method as claimed in claim 1 , wherein the metal nitride layer is formed to have a concentration of M that is about 0.1 at % to about 10 at %.7. The method as claimed in claim 1 , wherein forming the metal nitride layer includes performing an atomic layer deposition (ALD) process or a chemical vapor deposition (CVD) process.8. The method as claimed in claim 1 , wherein a process temperature for forming the metal nitride layer is about 150° C. to about 400° C.9. The method as claimed in claim 1 , wherein a process pressure for forming the metal nitride layer is between 0 Torr and about 100 Torr.10. The method as claimed in claim 1 , wherein:the metal precursor is a titanium precursor, andthe metal nitride layer is formed to have an atomic ratio of nitrogen to titanium that is 0.9 to 1.1.12. The method as claimed in claim 11 , wherein M2 is Sn.13. The method as claimed in claim 11 , wherein the first reactant includes one or more of NH claim 11 , NH claim 11 , or N.142. The method as claimed in claim 11 , wherein the first metal nitride layer is formed to have a concentration of M that is about 0.1 at % to about 10 at %.15. The method as claimed in claim 11 , further comprising forming interconnection ...

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Номер записи: 61

04-06-2015 дата публикации

TRANSPARENT COMPOUND SEMICONDUCTOR AND P-TYPE DOPING METHOD THEREFOR

Номер: US20150155067A1

Автор: Char Kookrin, IHM Jisoon

Принадлежит:

The present invention relates to a p-type doped transparent compound semiconductor and a p-type doping method therefor, and the purpose thereof is to provide a transparent compound semiconductor having transparency and electrical conductivity by being p-type doped on the basis of either (Ba,Sr)SnOor SnO. The present invention provides a p-type transparent compound semiconductor having either (Ba,Sr)SnOor SnOdoped with M (M is one among Ru, Ga, Cu, Zn, K, Na or Rb), and a p-type doping method therefor. M substituted for (Ba,Sr) and Sn included in either (Ba,Sr)SnOor SnOhas a composition of 0 Подробнее

Номер записи: 62

17-06-2021 дата публикации

METHOD FOR PRODUCING METAL OXIDE DISPERSION LIQUID AND METHOD FOR PRODUCING INFRARED-RADIATION-SHIELDING FILM

Номер: US20210179440A1

Автор: Higano Satoko

Принадлежит:

According to this method, a fatty acid of CnHO(n=5 to 14) is mixed with a plurality of metal sources selected from Zn, In, Sn, Sb, and Al, thereby fatty acid metal salts are obtained, subsequently the fatty acid metal salts are heated at 130° C. to 250° C., and a metal soap that is a precursor is obtained. This precursor is heated at 200° C. to 350° C., and metal oxide primary particles are dispersed in the precursor melt. To this dispersion liquid, a washing solvent having a δP value higher by 5 to 12 than the δP value of the Hansen solubility parameter of the final dispersing solvent is added, thereby the metal oxide primary particles are washed and agglomerated, metal oxide secondary particles are obtained, and then washing is repeated. 1. A method for producing a dispersion liquid in which metal oxide secondary particles formed by metal oxide primary particles agglomerated together are dispersed in a hydrophobic solvent as a final dispersing solvent , the method comprising:{'sub': n', '2n', '2, '(a) a step of mixing, by a direct method or a metathesis method, a fatty acid of CHO(n=5 to 14) with each of metal sources including a plurality of kinds of metals selected from the group consisting of Zn, In, Sn, Sb, and Al, metal oxides of the metals, metal hydroxides of the metals, and thereby obtaining a mixture of a plurality of kinds of fatty acid metal salts;'}(b) a step of heating the mixture of fatty acid metal salts at a temperature of 130° C. to 250° C., subsequently cooling the mixture, and thereby obtaining a metal soap, which is a precursor of the metal oxide primary particles;(c) a step of heating the precursor of the metal oxide primary particles at a temperature of 200° C. to 350° C., and thereby dispersing the metal oxide primary particles in a melt of the precursor;(d) a step of adding a washing solvent that has, when a polarization term of Hansen solubility parameter (HSP) of the solvent is designated as δP, a δP value higher by 5 to 12 than the δP ...

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Номер записи: 63

11-06-2015 дата публикации

NANOMETRIC TIN-CONTAINING METAL OXIDE PARTICLE AND DISPERSION, AND PREPARATION METHOD AND APPLICATION THEREOF

Номер: US20150160379A1

Автор: Chen Jianfeng, Shen Zhigang, SHER Hock Sing, Soh Wei Kian, WANG Aici, YUN Sung Lai Jimmy, Zhang Jiyao, ZHONG Jie

Принадлежит:

There is disclosed a tin-containing metal oxide nanoparticle, which has an index of dispersion degree less than 7 and a narrow particle size distribution which is defined as steepness ratio less than 3. There is disclosed dispersion, paint, shielding film and their glass products which comprise the said nanoparticles. Besides, there are also disclosed processes of making the tin-containing metal oxide nanoparticle and their dispersion. The tin-containing metal oxide nanoparticles and their dispersion disclosed herein may be applied on the window glass of houses, buildings, vehicles, ships, etc. There is provided an excellent function of infrared blocking with highly transparent, and to achieve sunlight controlling and thermal radiation controlling. 139-. (canceled)40. Tin-containing metal oxide nano-particles , said tin-containing metal oxide including tin element and a metallic element other than tin , wherein the tin-containing metal oxide nano-particles have a particle diameter distribution as defined with an index of dispersion degree of less than 7 and a steepness ratio of less than 3.41. The tin-containing metal oxide nano-particles according to claim 40 , wherein said tin-containing metal oxide nano-particles are coated on surface with a surfactant claim 40 , said surfactant is selected from a non-silane surface modifying agent claim 40 , a silane coupling agent claim 40 , a titanate coupling agent claim 40 , or a mixture thereof claim 40 , preferably the non-silane surface modifying agent is selected from sodium dodecyl sulphate claim 40 , sodium lauryl sulphate claim 40 , sodium laurate claim 40 , sodium oleate claim 40 , sodium naphthenate claim 40 , sodium stearate claim 40 , sodium abietate claim 40 , sodium iso-octoate claim 40 , sodium linoleate claim 40 , sodium caproate claim 40 , sodium ricinate claim 40 , ethyl acetate claim 40 , sodium acetate claim 40 , dioctylsodium sulphosuccinate claim 40 , polyoxyethylene sorbitan monooleate claim 40 , ...

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Номер записи: 64

14-06-2018 дата публикации

BIOPOLAR ELECTRODE FOR THE IMPEDIMETRIC EXAMINATION AND MANIPULATION OF LIVING CELLS IN VITRO

Номер: US20180164238A1

Автор: Goetz Christian, WEGENER Joachim

Принадлежит:

The present disclosure relates to a measuring device with a bipolar electrode array for the impedimetric analysis of adherent cells according to the ECIS principle (electric cells substrate impedance sensing). The measuring device comprises an electrode array which is adapted for being wetted with an electrolyte solution and adherently growing cells in order to perform impedimetric cell analyzes, characterized in that the electrode array comprises a bipolar electrode on a substrate, where the bipolar electrode is formed as a conductive path on the transparent substrate and has an inherent resistance between two connection points of the conductive path that is a multiple of the AC impedance of the electrolyte solution at 1 MHz, measured at the two connection points. 1. An electrode array adapted for being wetted with an electrolyte solution and for adherently growing cells in order to perform impedimetric cell analysis comprising:a bipolar electrode on a substrate, wherein said bipolar electrode is formed as a conductive path on said substrate; andwherein said substrate has an inherent resistance between two connecting points of said conductive path which is a multiple of the AC impedance of said electrolytic solution at 1 MHz, as measured at said two connection points.2. The electrode array according to claim 1 , wherein said substrate and said conductive path are transparent in a measuring region intended for adherent cells.3. The electrode array according to claim 2 , wherein said transparent substrate is glass claim 2 , polycarbonate claim 2 , polyethylene terephthalate (PET) claim 2 , a porous membrane or polyethylene naphthalate (PEN).4. The electrode array according to claim 1 , wherein said bipolar electrode has an inherent resistance of at least 300Ω.5. The electrode arrangement according to claim 1 , wherein said bipolar electrode is a gold film with a layer thickness between 10 nm to 30 nm.6. The electrode array according to claim 1 , where said bipolar ...

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Номер записи: 65

30-05-2019 дата публикации

TRANSPARENT CONDUCTOR

Номер: US20190160783A1

Автор: Sato Yoshinori, SHINGAI Hiroshi, TAMAGAWA Yoshihisa, Tanabe Yoshihiko

Принадлежит: TDK Corporation

A transparent conductor includes: a transparent resin base material; a first metal oxide layer; a metal layer including a silver alloy; and a second metal oxide layer, in this order. The first metal oxide layer contains at least one of tin oxide and niobium oxide. When the tin oxide and the niobium oxide are respectively set in terms of SnO2 and Nb2O5, a molar basis content of the total of SnO2 and Nb2O5 with respect to the total of metal oxides contained in the first metal oxide layer is greater than a molar basis content of the total of SnO2 and Nb2O5 with respect to the total of metal oxides contained in the second metal oxide layer, and the content in the first metal oxide layer is greater than or equal to 45 mol %. 1. A transparent conductor , comprising:a transparent resin base material;a first metal oxide layer;a metal layer including a silver alloy; anda second metal oxide layer, in this order,wherein the first metal oxide layer contains at least one of tin oxide and niobium oxide, and{'sub': 2', '2', '5, 'when the tin oxide and the niobium oxide are respectively set in terms of SnOand NbO,'}{'sub': 2', '2', '5', '2', '2', '5, 'a molar basis content of the total of SnOand NbOwith respect to the total of metal oxides contained in the first metal oxide layer, is greater than a molar basis content of the total of SnOand NbOwith respect to the total of metal oxides contained in the second metal oxide layer, and'}the content in the first metal oxide layer is greater than or equal to 45 mol %.2. The transparent conductor according to claim 1 ,wherein the first metal oxide layer is not dissolved in an etching liquid containing a phosphoric acid, an acetic acid, a nitric acid, and a hydrofluoric acid, in which the second metal oxide layer is dissolved.3. The transparent conductor according to claim 1 ,{'sub': 2', '2, 'wherein the first metal oxide layer contains tin oxide, and when the tin oxide is set in terms of SnO, a content of SnOwith respect to the total of ...

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Номер записи: 66

30-05-2019 дата публикации

NEAR-INFRARED ABSORBING FINE PARTICLE DISPERSION LIQUID, NEAR-INFRARED ABSORBING FINE PARTICLE DISPERSION BODY, NEAR-INFRARED ABSORBING TRANSPARENT SUBSTRATE, NEAR-INFRARED ABSORBING LAMINATED TRANSPARENT SUBSTRATE

Номер: US20190161361A1

Автор: CHONAN Takeshi, TSUNEMATSU Hirofumi

Принадлежит: SUMITOMO METAL MINING CO., LTD.

There is provided a near-infrared absorbing fine particle dispersion liquid containing near-infrared absorbing fine particles, thereby as well as exhibiting near-infrared light absorption properties and suppressing a scorching sensation on the skin when used in structures such as window materials and the like, also enabling usage of communication devices, imaging devices, sensors and the like that employ near-infrared light through these structures, a near-infrared absorbing film or a near-infrared absorbing glass, a dispersion body or a laminated transparent substrate, the dispersion liquid containing at least composite tungsten oxide fine particles and antimony doped tin oxide fine particles and/or tin doped indium oxide fine particles as near-infrared absorbing fine particles, wherein in the composite tungsten oxide fine particles, an average value of a transmittance in a wavelength range of 800 to 900 nm is 30% or more and 60% or less, and an average value of a transmittance in a wavelength range of 1200 to 1500 nm is 20% or less, and a transmittance at a wavelength of 2100 nm is 22% or less, when a visible light transmittance is 85% at the time of calculating only light absorption by the composite tungsten oxide fine particles, and containing mixed particles of the composite tungsten oxide fine particles and antimony-doped tin oxide fine particles and/or tin-doped indium oxide fine particles dispersed in a liquid medium, wherein the liquid medium is selected from rater, an organic solvent, an oil and fat, a liquid resin, a liquid plasticizer for plastics, or a mixture thereof, wherein when a visible light transmittance is adjusted to 85% at the time of calculating only light absorption by the near-infrared absorbing fine particles in the dispersion liquid by diluting with the liquid medium, an average value of a transmittance in the wavelength range of 800 to 900 nm is 30% or more and 60% or less, an average value of a transmittance in the wavelength range of ...

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Номер записи: 67

30-05-2019 дата публикации

NANOPARTICLE ASSEMBLIES AND METHOD FOR PRODUCING NANOPARTICLE ASSEMBLIES

Номер: US20190165190A1

Автор: IWAHORI Koichiro, NAKAZUMI Makoto, NAMIHIRA Takao, NISHI Yasutaka

Принадлежит:

The nanoparticle assembly includes nanoparticles having an average primary particle size of 60 nm or less, and the nanoparticle assembly has a diameter of more than 500 nm and 5 μm or less. 1. A method for producing a nanoparticle assembly , comprising:mist generation in which a solution containing a nanoparticle is prepared and mist of the solution is generated;plasma generation in which a plasma is generated between a first electrode and a second electrode; andnanoparticle assembly production in which the mist is supplied between the first electrode and the second electrode and in which a nanoparticle assembly is generated,{'sub': 391', '357', '391', '357, 'wherein, in the plasma generation, the plasma has a ratio of emission intensities (I/I) of 0.072 or more and less than 0.08, where Iis an emission intensity at a wavelength of 391 nm and Iis an emission intensity at a wavelength of 357 nm,'}the nanoparticle has an average primary particle size of 60 nm or less, andthe nanoparticle assembly has a diameter of more than 500 nm to 5 μm or less.2. The method for producing a nanoparticle assembly according to claim 1 ,wherein the average primary particle size is more than 10 nm and 50 nm or less, andthe diameter of the nanoparticle assembly is more than 800 nm.3. The method for producing a nanoparticle assembly according to claim 1 ,wherein the average primary particle size is more than 20 nm and 40 nm or less, andthe diameter of the nanoparticle assembly is more than 1 μm.4. The method for producing a nanoparticle assembly according to claim 1 ,wherein the nanoparticle is an oxide.5. The method for producing a nanoparticle assembly according to claim 1 ,wherein the nanoparticle is a metal.6. The method for producing a nanoparticle assembly according to claim 4 , wherein the oxide is a tin-doped indium oxide (ITO).7. The method for producing a nanoparticle assembly according to claim 4 , wherein the oxide is a gallium-doped zinc oxide (GZO).8. The method for ...

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Номер записи: 68

21-06-2018 дата публикации

TUNGSTEN-DOPED STANNIC OXIDE COLLOIDAL SUSPENSION AND METHOD FOR PREPARING THE SAME

Номер: US20180171158A1

Автор: Pega Stephanie, Shi Liyi, Wang Zhuyi, YUAN Shuai, ZHAO Jian, Zhao Yin

Принадлежит:

A colloidal suspension of tungsten-doped SnOparticles is provided. It also pertains to the method for preparing such colloidal suspension and to its uses, especially in the manufacture of an antistatic coating for an optical article, such as an ophthalmic lens. 1. A colloidal suspension of tungsten-doped stannic oxide nanoparticles having a W:Sn molar ratio higher than or equal to 0.0004.2. The colloidal suspension according to claim 1 , wherein said W:Sn molar ratio is lower than or equal to 0.15 claim 1 , in particular lower than or equal to 0.05 claim 1 , particularly lower than or equal to 0.03.3. The colloidal suspension according to claim 1 , wherein said nanoparticles are dispersed in water claim 1 , alcohols selected from methanol claim 1 , ethanol claim 1 , propanol or butanol claim 1 , glycols claim 1 , glycol ethers claim 1 , ketones or a mixture thereof claim 1 , preferably in a mixture of water and alcohol selected from methanol claim 1 , ethanol claim 1 , propanol or butanol.4. The colloidal suspension according to claim 1 , wherein the mean particle size of said nanoparticles is from 4 to 20 nm claim 1 , in particular from 6 nm to 12 nm.5. The colloidal suspension according to claim 1 , wherein tungsten is included in the lattice of tin oxide.6. The colloidal suspension according to claim 1 , wherein said suspension further comprises oxalic acid dihydrate.7. The colloidal suspension according to claim 1 , wherein said suspension further comprises polyvinylpyrrolidone.8. A substrate coated with a composition comprising the colloidal suspension according to .9. The substrate according to claim 8 , wherein said substrate is an optical article claim 8 , such as an ophthalmic or an optical lens claim 8 , or a display or touch screen.10. The substrate according to claim 8 , wherein the charge decay time of said substrate is lower than 1 s claim 8 , preferably lower than 500 ms claim 8 , more preferably lower than 200 ms.11. A method for producing the ...

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Номер записи: 69

18-09-2014 дата публикации

In-Situ Synthesis of Multi-Core Core Electoconductive Powders

Номер: US20140264194A1

Автор: Michaels Emily W., Milligan Deanna, MORRIS David

Принадлежит: MILLIKEN & COMPANY

This invention relates to the in-situ synthesis of multi-core electroconductive powders. The multi-core ECPs of the present invention are made using an in-situ synthesis method which eliminates the need for combining mixtures of various types of single-core ECPs in order to achieve the desired end-use product. The multi-core ECPs described herein exhibit very little coloration. They also exhibit low electrical resistivity and contain reduced amounts of antimony. 1. A multi-core electroconductive composition comprising at least two core materials.2. The electroconductive composition of wherein the at least two core materials are independently selected from the group consisting of mica; silica; calcium carbonate; oxides of titanium claim 1 , magnesium claim 1 , calcium claim 1 , barium claim 1 , strontium claim 1 , zinc claim 1 , tin claim 1 , nickel and iron; barium carbonate; strontium carbonate; calcium sulfate; barium sulfate; strontium sulfate claim 1 , cordierite; anorthite; and pyrophyllite.3. The electroconductive composition of comprising a mixture of A) particles of an electroconductive powder comprising antimony-containing tin oxide and B) separate particles of a non-electrically conducting filler selected from the group consisting of silica claim 1 , titanium dioxide claim 1 , mica claim 1 , calcium carbonate claim 1 , and mixtures thereof claim 1 , in a ratio of electroconductive powder to non-electrically conducting filler of from about 98:2 to about 7:3 claim 1 , said mixture possessing a dry powder resistivity which is lower than the weighted average of its components.4. The electroconductive composition of wherein said electroconductive powder comprises a conducting coating of antimony-containing tin oxide on the at least two core materials.5. The electroconductive composition of wherein the electroconductive powder is selected from the group consisting of crystallites of antimony-containing tin oxide claim 3 , metal coated powders and two dimensional ...

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Номер записи: 70

18-09-2014 дата публикации

Indium Oxide Transparent Conductive Film

Номер: US20140264197A1

Автор: Ikisawa Masakatsu, Takami Hideo

Принадлежит: JX NIPPON MINING & METALS CORPORATION

An indium oxide sintered compact containing zirconium as an additive, wherein the ratio of atomic concentration of zirconium to the sum of the atomic concentration of indium and the atomic concentration of zirconium is in the range of 0.5 to 4%, the relative density is 99.3% or higher, and the bulk resistance is 0.5 mΩ·cm or less. An indium oxide transparent conductive film of high transmittance in the visible light region and the infrared region, with low film resistivity, and in which the crystallization temperature can be controlled, as well as the manufacturing method thereof, and an oxide sintered compact for use in producing such transparent conductive film are provided. 1. An indium oxide transparent conductive film containing zirconium as an additive , wherein a ratio of atomic concentration of zirconium to a sum of that of indium and zirconium is in a range of 0.5 to 4% , resistivity is 8 x 10Ω·cm or less , electron mobility is 15 cm/V·s or more , transmittance in a wavelength of 1200 nm is 85% or higher , and the indium oxide transparent conductive film is amorphous.2. The indium oxide transparent conductive film according to claim 1 , wherein a crystallization temperature of the film is in a range of 150° C. to 260° C.3. The indium oxide transparent conductive film according to containing tin in addition to the additive claim 1 , wherein a ratio of atomic concentration of tin to a sum of that of indium claim 1 , zirconium and tin is in a range of 0.015 to 0.5% claim 1 , the resistivity is 8×10Ω·cm or less claim 1 , the electron mobility is 15 cm/V·s or more claim 1 , the transmittance in a wavelength of 1200 nm is 85% or higher claim 1 , and the indium oxide transparent conductive film is amorphous.4. The indium oxide transparent conductive film according to claim 3 , wherein a crystallization temperature of the film is in a range of 150° C. to 260° C.5. The indium oxide transparent conductive film according to containing at least one of magnesium and ...

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Номер записи: 71

28-05-2020 дата публикации

METHOD FOR PREPARING GRAPHENE-TIN OXIDE NANOCOMPOSITE, AND GRAPHENE-TIN OXIDE NANOCOMPOSITE

Номер: US20200166469A1

Автор: BANG Jae Hoon, CHANG Ki Seok, CHOI Myong Sik, Kang Han Saem, KANG Sung Yong, KIM Hyoun Woo, KIM Wook Sung, Kwon Yong Jung, RYU Sung Pil

Принадлежит:

A method of manufacturing a graphene-tin oxide nanocomposite comprises dispersing graphene and tin oxide in an organic solvent to prepare a dispersion solution, drying the dispersion solution to obtain a powdery mixture, and irradiating the mixture with microwaves to obtain a graphene-tin oxide nanocomposite. Irradiation of graphene and tin oxide with microwaves results in the simplification of the manufacturing process of graphene-tin oxide nanocomposites and a decrease in manufacturing time and cost, and produce graphene-tin oxide nanocomposites at low temperatures. Further, the graphene-tin oxide nanocomposite with improved sensitivity to NO2 gas may be produced. 1. A method of manufacturing a graphene-tin oxide nanocomposite , the method comprising:dispersing graphene and tin oxide in an organic solvent to prepare a dispersion solution;drying the dispersion solution to obtain a powdery mixture; andirradiating the powdery mixture with microwaves to obtain the graphene-tin oxide nanocomposite.2. The method of claim 1 , wherein the graphene and the tin oxide are in a powder form.3. The method of claim 1 , wherein a solid content ratio of the graphene and the tin oxide ranges from 0.1:99.9 to 5:95.4. The method of claim 1 , wherein the microwave is irradiated at an output of 500 W to 2000 W.5. The method of claim 1 , wherein the microwave is irradiated for 1 minute to 10 minutes.6. The method of claim 1 , wherein the organic solvent includes an alcohol-based solvent.7. The method of claim 1 , further comprising:dispersing the graphene-tin oxide nanocomposite in an organic solvent; andcoating the dispersed nanocomposite solution on a substrate.8. (canceled)9. The nanocomposite of claim 1 , wherein the graphene-tin oxide nanocomposite comprises a primary particle of tin oxide and a secondary particle of tin oxide.10. The nanocomposite of claim 9 , wherein a tin atom is inserted at an interstitial site.11. A gas sensor including the graphene-tin oxide nanocomposite ...

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Номер записи: 72

06-06-2019 дата публикации

KESTERITE MATERIAL OF CZTS, CZTSe OR CZTSSe TYPE

Номер: US20190172711A1

Автор: DAHL Søren, NERLOV Jesper, SCHJØDT Niels Christian

Принадлежит: Haldor Topsoe A/S

A method of producing a kesterite material of CZTS, CZTSe or CZTSSe type, including the steps of: a) preparing an acidic solution by dissolving copper and zinc salts in water in desired molar ratio, b) preparing a basic solution by dissolving an alkali metal stannate together with an alkali metal carbonate or an alkali metal hydrogen carbonate or an alkali metal hydroxide or a combination thereof, and optionally with an alkali metal selenate or an alkali metal selenite or a mixture thereof, c) carrying out a precipitation reaction by mixing the acidic and the basic solution, d) drying the precipitate thereby providing a precursor for the kesterite material, and e) sulfurizing the precursor of step d to provide the kesterite material. Also, a precursor for a kesterite material of CZTS, CZTSe or CZTSSe type. 1. A method of producing a kesterite material of CZTS , CZTSe or CZTSSe type , comprising the steps of:a) preparing an acidic solution by dissolving copper and zinc salts in water in desired molar ratio,b) preparing a basic solution by dissolving an alkali metal stannate together with an alkali metal carbonate or an alkali metal hydrogen carbonate or an alkali metal hydroxide or a combination thereof, and optionally with an alkali metal selenate or an alkali metal selenite or a mixture thereof,c) carrying out a precipitation reaction by mixing said acidic and said basic solution, thereby obtaining a precipitate,d) washing and heat treating said precipitate thereby providing a precursor for the kesterite material, ande) sulfurizing the precursor of step d to provide the kesterite material.2. The method according to claim 1 , wherein the salts used for the acidic solution are nitrates claim 1 , halides claim 1 , sulfates claim 1 , carboxylates or combinations thereof.3. The method according to claim 1 , wherein the copper salt is copper (II) nitrate and the zinc salt is zinc (II) nitrate.4. The method according to claim 1 , wherein said acidic solution further ...

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Номер записи: 73

13-06-2019 дата публикации

Synthesis of and Uses of Alkaline Earth Metal Stannates

Номер: US20190177177A1

Автор: CROSSLEY David

Принадлежит: William Blythe Limited

The present invention provides a particularly advantageous form of alkaline earth metal hydroxystannate and alkaline earth metal stannate exhibiting a BET specific surface area of from 20 to 200 m2/g. A method of producing such particulate material and evidence of its benefits in use such as in at a reduction in a polymer sample at elevated temperature is also disclosed. 1. An alkaline earth metal stannate , where the alkaline earth metal is Mg or Ca , or an alkaline earth metal hydroxystannate where the alkaline earth metal is one of Mg , Ca or Ba; having a surface area using the B.E.T. method of from 20 to 200 m/g.2. The metal stannate or hydroxystannate of in which the surface area is from 50 to 90 m/g.3. The metal stannate or hydroxystannate of in which the alkaline earth metal is Ca.4. A method of producing a high surface area alkaline earth metal hydroxystannate by precipitation claim 1 , the method comprising the steps:providing an agitated aqueous solution of an alkaline earth metal salt in the range 20% to 50% by weight at a specified temperature between 25° C. and 40° C.;introducing with mixing into said solution approximately a molar equivalent of alkali metal stannate at a temperature in the range 35° C. to 45° C.;completing the introduction with agitation for a time period in the region of 1 to 5 hours;subsequently adjusting pH of the composition to between 6.0 and 7.0 using the acid equivalent of the alkaline earth metal salt said acid being in the concentration range of 10% to 30% by weight acid; to precipitate alkaline earth metal hydroxystannate.5. The method of in which the adjusting of pH is in the range 6.5 to 6.7.6. The method of in which the alkali metal stannate is at a temperature of 40° C.+/−3° C.7. The method of in which the specified temperature is 30° C.+/−5° C.8. The method of in which the metal of the alkali metal stannate is calcium stannate.9. (canceled)10. A polymer comprising a component that involves acid at elevated temperature in ...

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Номер записи: 74

18-09-2014 дата публикации

Cu2ZnSnS4 Nanoparticles

Номер: US20140273337A1

Автор: Gresty Nathalie, Harris James, Masala Ombretta, Pickett Nigel

Принадлежит: NANOCO TECHNOLOGIES, LTD.

Materials and methods for preparing CuZnSnS(CZTS) layers for use in thin film photovoltaic (PV) cells are disclosed herein. The CZTS materials are nanoparticles prepared by a colloidal synthesis in the presence of a labile organothiol. The organothiol serves as both a sulphur source and as a capping ligand for the nanoparticles. 1. A process for making CuZnSnSnanoparticles , comprising reacting a copper precursor , a zinc precursor and a tin precursor in the presence of an organothiol ligand.2. A process as recited in claim 1 , wherein the copper precursor is an acetate claim 1 , chloride claim 1 , bromide claim 1 , iodide or acetylacetonate.3. A process as recited in claim 1 , wherein the copper precursor is copper (I) acetate.4. A process as recited in claim 1 , wherein the zinc precursor is an acetate claim 1 , chloride claim 1 , bromide claim 1 , iodide or acetylacetonate.5. A process as recited in claim 1 , wherein the zinc precursor is zinc (II) acetate.6. A process as recited in claim 1 , wherein the tin precursor is a tin (IV) chloride solution claim 1 , fuming tin (IV) chloride claim 1 , tine(IV) acetate claim 1 , tin(IV) bis(acetylacetonate) dichloride claim 1 , triphenyl(triphenylmethyl) tin claim 1 , or tin (IV) chloride pentahydrate.7. A process as recited in where the tin precursor is tin (IV) chloride as a solution in dichloromethane.8. A process as recited in claim 1 , wherein the organothiol ligand is an alkanethiol claim 1 , alkenethiol or aromatic thiol.9. A process as recited in claim 1 , wherein the organothiol ligand has a boiling point in the range 190-300° C.10. A process as recited in claim 1 , wherein the organothiol ligand is 1-dodecanethiol.11. A process as recited in claim 1 , wherein the process comprises:a. providing the copper precursor, the zinc precursor, the tin precursor and the organothiol ligand in a first solvent at a first temperature to form a mixture;b. heating the mixture to a second temperature to distil the first solvent; ...

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Номер записи: 75

06-07-2017 дата публикации

TIN DIOXIDE NANOPARTICLES SYNTHESIS APPARATUS AND TIN DIOXIDE NANOPARTICLES PROCESS PRODUCTION

Номер: US20170189878A1

Автор: Fontanez Diego Manuel Ferreira Lusquinos, Moura Francisco Jose

Принадлежит:

A new and efficient nanoparticles synthesis apparatus and process production. More particularly, an apparatus and process applied to the synthesis of nanostructured tin dioxide. The benefits provided by the apparatus and process are applied in various gaseous reactions where occurs the formation of solid and gaseous products. 1. A nanoparticle synthesis reactor comprising:a) a reactor inlet;b) a tubular section in which one of at least two reactants flows axially;c) a gas distributor surrounding the tubular section, the gas distributor comprising a distributor inlet, a circular shape, cylindrical baffles providing flow canals, and orifices surrounding the tubular section of the reactor; andd) a powder collector, {'br': None, 'sub': (g)', '(g)', '(s)', '(g), 'A+B→C+D.'}, 'wherein the gas distributor provides an optimized radial interaction among reactant flows through a curtain of at least one of the reactants, providing kinetic enhancement of the following reaction2. The reactor according to claim 1 , wherein:a first of the reactants flows axially through the tubular section; anda second of the reactants enters the gas distributor through the distributor inlet, wherein the second reactant is redirected by the canals provided by the cylindrical baffles and then flows through the orifices that surround the tubular section, meeting the first reactant flow radially, synthesizing nanoparticles.3. The reactor according to claim 1 , wherein:{'sub': (g)', '4(g), 'Ais SnCl;'}{'sub': (g)', '2', '(g), 'Bis HO;'}{'sub': (s)', '2(s), 'Cis SnO;'}{'sub': (g)', '(g), 'Dis HCl; and'}{'sub': '2(s)', 'SnOis in the form of tin dioxide nanoparticles.'}4. The reactor according to claim 3 , wherein the reactor maintains the reaction temperature at approximately 200° C.5. The reactor according to claim 1 , wherein the reactor provides particle size reduction of the synthesized nanoparticles and optimization of at least one of reaction conversion claim 1 , reaction temperature claim 1 , and ...

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Номер записи: 76

23-07-2015 дата публикации

OXIDE SINTERED BODY AND TABLET OBTAINED BY PROCESSING SAME

Номер: US20150206615A1

Автор: Nakayama Tokuyuki

Принадлежит: SUMITOMO METAL MINING CO., LTD.

A tablet for ion plating which allows high speed formation of transparent conductive films suitable for solar cells and allows continuous film formation without causing cracks, breakage or splashing. A sintered oxide includes indium oxide as a main component and tin as an additive element, and having a tin content of 0.001 to 0.15 in terms of an atomic ratio of Sn/(In+Sn). The sintered oxide mainly includes crystal grains (A) having a tin content that is less than an average tin content of the sintered oxide and crystal grains (B) having a tin content that is at or above the average tin content of the sintered oxide, the difference in the average tin content between the crystal grains (B) and the crystal grains (A) being 0.015 or more in terms of the atomic ratio of Sn/(In+Sn), and has a density of 3.4 to 5.5 g/cm. 1. A sintered oxide comprising indium oxide as a main component and tin as an additive element , and having a tin content of 0.001 to 0.15 in terms of an atomic ratio of Sn/(In+Sn) , wherein:{'sup': '3', 'the sintered oxide mainly comprises crystal grains (A) having a tin content that is less than an average tin content of the sintered oxide and crystal grains (B) having a tin content that is at or above the average tin content of the sintered oxide, a difference in the average tin content between the crystal grains (B) and the crystal grains (A) being 0.015 or more in terms of the atomic ratio of Sn/(In+Sn), and has a density of 3.4 to 5.5 g/cm.'}2. A sintered oxide comprising indium oxide as a main component and tin as an additive element , and further comprising one or more metal elements (M elements) selected from the group of metal elements consisting of titanium , zirconium , hafnium , molybdenum and tungsten as an additive element and having a total content of tin and the M element(s) of 0.001 to 0.15 in terms of an atomic ratio of (Sn+M)/(In+Sn+M) , wherein:{'sup': '3', 'the sintered oxide comprises crystal grains (A) having at least a tin content ...

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Номер записи: 77

25-09-2014 дата публикации

Ferroelectric thin film-forming sol-gel solution

Номер: US20140288219A1

Автор: Hideaki Sakurai, Nobuyuki Soyama, Toshihiro Doi

Принадлежит: Mitsubishi Materials Corp

This ferroelectric thin film-forming sol-gel solution contains: a PZT-based compound; a high-molecular compound used to adjust the viscosity containing polyvinyl pyrrolidone; and an organic dopant containing N-methyl pyrrolidone, in which the amount of the PZT-based compound is greater than or equal to 17 mass % in terms of oxides, the molar ratio (PZT-based compound:polyvinyl pyrrolidone) of the polyvinyl pyrrolidone to the PZT-based compound is 1:0.1 to 1:0.5 in terms of monomers, and the amount of the organic dopant containing N-methyl pyrrolidone in the sol-gel solution is 3 mass % to 13 mass %.

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Номер записи: 78

27-06-2019 дата публикации

Flame Based Fluidized Bed Reactor for Nanomaterials Production

Номер: US20190193044A1

Автор: Guhy Lukus, Nguyen Tu Quang, Paxton William, Sunkara Mahendra

Принадлежит: Advanced Energy Materials, LLC

The present development is a reactor system for the production of nanostructures. The reactor system comprises a conical reactor body designed to maintain an upwardly directed vertical plasma flame and hydrocarbon flame. The reactor system further includes a metal powder feed that feeds into the plasma flame, a cyclone and a dust removal unit. The system is designed to produce up to 100 grams of metal oxide nanomaterials per minute. 1. In a reactor system for producing nanostructures wherein the reactor system comprises a reaction chamber having a flame source , and a powder feeder to disperse a material for producing nanostructures into the flame , and a means to receive and separate the produced nanostructures and unreacted dispersed material and to isolate the produced nanostructures , the improvement comprising: providing a reaction chamber that defines a bottom and a top and that has a flame source located at the bottom and wherein the top is adapted to allow materials from the reaction chamber to be transferred to the separation means , and wherein the reaction chamber is oriented such that a flame source produced by the flame source projects upwardly into the reaction chamber.2. The reactor system of wherein the flame source is a plasma applicator or a plasma torch or a hydrocarbon burner or a combination thereof.3. In a reactor system for producing nanostructures wherein the reactor system comprises a reaction chamber having a flame source claim 1 , and a powder feeder to disperse a material for producing nanostructures into the flame claim 1 , and a mechanical separator to receive and separate the produced nanostructures and unreacted dispersed material and to isolate unreacted dispersed material in a container that is in communication with the separator claim 1 , the improvement comprising: providing a reaction chamber has a cone-shaped configuration with a narrow end of the cone formed adjacent to the flame source and a wide end of the cone closed with a ...

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Номер записи: 79

13-08-2015 дата публикации

METAL CHALCOGENIDE SYNTHESIS METHOD AND APPLICATIONS

Номер: US20150225254A1

Автор: Robinson Richard D., ZHANG Haitao

Принадлежит: CORNELL UNIVERSITY

A method for synthesizing a metal chalcogenide nanocrystal (NC) material includes reacting a metal material and an ammonium chalcogenide material in an organic solvent material. The method provides that the metal chalcogenide nanocrystal material may be synthesized by a heating-up method at large scale (i.e., greater than 30 grams). Ammonium chalcogenide salts exhibit high reactivity and metal chalcogenide nanocrystals can be synthesized at low temperatures (i.e., less than 200° C.) with high conversion yields (i.e., greater than 90 percent). 1. A synthetic method comprising reacting in an organic solvent material a metal material and an ammonium chalcogenide material to form a metal chalcogenide nanocrystal material.2. The method of wherein the organic solvent material comprises an anhydrous organic solvent material.3. The method of wherein the reacting produces greater than 30 grams of metal chalcogenide nanocrystal material in a single reaction batch.4. The method of wherein the metal chalcogenide nanocrystal material has a monodispersity less than 10 percent.5. The method of wherein the metal material is selected from the group consisting of a metal oxide claim 1 , a metal coordination complex and a metal salt.6. The method of wherein the metal material comprises a metal cation selected from the group consisting of Ti claim 5 , Mn claim 5 , Fe claim 5 , Co claim 5 , Ni claim 5 , Cu claim 5 , Zn claim 5 , Ga claim 5 , Mo claim 5 , Ag claim 5 , Cd claim 5 , In claim 5 , Sn claim 5 , Sb claim 5 , W claim 5 , Hg claim 5 , Pb claim 5 , and Bi metal cations.7. The method of wherein the metal salt comprises an anion selected from the group consisting of carboxylate claim 5 , diketonate claim 5 , halide claim 5 , perchlorate and amide anions.8. The method of wherein the ammonium chalcogenide is selected from the group consisting of ammonium sulfide claim 1 , ammonium selenide and ammonium telluride.9. The method of wherein the reacting is undertaken at a temperature ...

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Номер записи: 80

02-08-2018 дата публикации

POROUS OXIDE SEMICONDUCTOR INCLUDING THREE-DIMENSIONALLY INTERCONNECTED NANOPORES, MESOPORES, AND MACROPORES, METHOD FOR PREPARING THE POROUS OXIDE SEMICONDUCTOR AND GAS SENSOR INCLUDING THE POROUS OXIDE SEMICONDUCTOR AS GAS SENSING MATERIAL

Номер: US20180215628A1

Автор: Choi Seung Ho, Kang Yun Chan, Lee Jong Heun, Yoon Jee-uk

Принадлежит: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION

The present invention relates to a porous oxide semiconductor including three-dimensionally interconnected nanopores, mesopores, and macropores, a method for preparing the porous oxide semiconductor, and a gas sensor including the porous oxide semiconductor as a gas sensing material. The nanopores have a diameter of 1 nm to less than 4 nm, the mesopores have a diameter of 4 nm to 50 nm, and the macropores have a diameter of 100 nm to less than 1 μm. The oxide semiconductor gas sensor of the present invention exhibits ultrahigh response and ultrafast response to various analyte gases due to the presence of the controlled nanopores, mesopores, and macropores. 1. A porous oxide semiconductor comprising three-dimensionally interconnected nanopores , mesopores , and macropores wherein the nanopores have a diameter of 1 nm to less than 4 nm , the mesopores have a diameter of 4 nm to 50 nm , and the macropores have a diameter of 100 nm to less than 1 μm.2. The porous oxide semiconductor according to claim 1 , wherein the oxide semiconductor is selected from the group consisting of SnO2 claim 1 , WO3 claim 1 , In2O3 claim 1 , ZnO claim 1 , TiO2 claim 1 , Fe2O3 claim 1 , MoO3 claim 1 , CuO claim 1 , NiO claim 1 , Co3O4 claim 1 , and Cr2O3.3. A method for preparing a porous oxide semiconductor comprising: preparing a metal salt solution; dispersing spherical template particles and elongated carbon precursors in the metal salt solution claim 1 , followed by ultrasonic spray to prepare microdroplets; and thermally decomposing the droplets.4. The method according to claim 3 , wherein the metal salt solution is a solution of at least one salt of a metal selected from the group consisting of Sn claim 3 , W claim 3 , In claim 3 , Zn claim 3 , Ti claim 3 , Fe claim 3 , Mo claim 3 , Cu claim 3 , Ni claim 3 , Co claim 3 , and Cr.5. The method according to claim 3 , wherein the spherical template particles have a diameter of 100 nm to less than 1 μm.6. The method according to claim 3 , ...

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Номер записи: 81

02-07-2020 дата публикации

METHOD FOR PRODUCING STANNOUS SULFIDE

Номер: US20200207636A1

Автор: Chen Hao, Chen Wei, DAI Weiping, Han Long, Shao Dan, Su Bin, Xie Hui, YANG Bin, Yang Kun, YANG Shouyun, ZHENG Chunyang

Принадлежит:

A method for producing stannous sulfide, the method including: 1) heating a tin-containing material to 200-600° C., and mixing sulfur with the tin-containing material heated, to yield a product; and 2) distilling the product in a vacuum furnace at a pressure of 1-500 pascal. 1. A method , comprising:1) heating a tin-containing material to 200-600° C., and mixing sulfur with the tin-containing material heated, to yield a product; and2) distilling the product in a vacuum furnace at a pressure of 1-500 pascal.2. The method of claim 1 , wherein the tin-containing material is refined tin or crude tin comprising tin and impurities selected from copper claim 1 , iron claim 1 , nickel claim 1 , or a mixture thereof.3. The method of claim 1 , wherein in 1) claim 1 , a mass ratio of the sulfur to the tin-containing material is 1.1-1.5.4. The method of claim 1 , wherein in 1) claim 1 , the sulfur is mixed with the tin-containing material for 5-30 min.5. The method of claim 1 , wherein the vacuum furnace has a temperature of 900-1350° C. This application is a continuation-in-part of International Patent Application No. PCT/CN2018/074485 with an international filing date of Jan. 29, 2018, designating the United States, now pending, and further claims priority benefits to Chinese Patent Application No. 201710802843.7 filed Sep. 7, 2017. The contents of all of the aforementioned applications, including any intervening amendments thereto, are incorporated herein by reference. Inquiries from the public to applicants or assignees concerning this document or the related applications should be directed to: Matthias Scholl P.C., Attn.: Dr. Matthias Scholl Esq., 245 First Street, 18th Floor, Cambridge, Mass. 02142.The disclosure relates to a method for producing stannous sulfide, also known as tin (II) sulfide. The chemical formula of stannous sulfide is SnS. Its natural occurrence concerns herzenbergite (α-SnS), a rare mineral.The disclosure provides a method for producing stannous ...

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Номер записи: 82

16-07-2020 дата публикации

BIOSENSOR

Номер: US20200223876A1

Автор: HANSSEN Johannes Hendrikus Leonardus, TWEEHUYSEN Robert

Принадлежит:

A biosensor having a hollow coil having wires coiled in parallel and an electronic circuit component operably connected to the coil, wherein the wires include at least a first coiled wire which may be used as a counter electrode, a second coiled wire which may be used as a working electrode and a third coiled wire which may be used as a reference electrode, wherein the second coiled wire is provided with a biocompatible layer having a bioreceptor, wherein the electronic circuit component is capable of generating an input signal for a transceiver based upon the activity of the bioreceptor and wirelessly sending the input signal to the transceiver, wherein the electronic circuit component is encapsulated in a biocompatible resin. 1. A biosensor , comprising:a hollow coil comprising wires coiled in parallel and an electronic circuit component operably connected to the coil,wherein the wires include at least a first coiled wire which is used as a counter electrode, a second coiled wire which is used as a working electrode and a third coiled wire which is used as a reference electrode,wherein the second coiled wire is provided with a biocompatible layer comprising a bioreceptor,wherein the electronic circuit component is capable of generating an input signal for a transceiver based upon the activity of the bioreceptor and wirelessly sending the input signal to the transceiver andwherein the electronic circuit component is encapsulated in a biocompatible resin.2. The biosensor according to claim 1 , wherein the second coiled wire has a Pt surface.3. The biosensor according to claim 1 , wherein the biocompatible layer comprising the bioreceptor is electroconductive.5. The biosensor according to claim 1 , wherein the coil is encapsulated in a top layer of a biocompatible material.6. The biosensor according to claim 5 , wherein the biocompatible material is a hydrophilic material.7. The biosensor according to claim 6 , wherein the hydrophilic material is chosen from the ...

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Номер записи: 83

25-07-2019 дата публикации

Member for Gas Sensor, Having a Metal Oxide Semiconductor Tube Wall with Micropores and Macropores, Gas Sensor, and Method for Manufacturing Same

Номер: US20190227016A1

Автор: CHOI Seon-Jin, JANG Ji Su, Kim Il-Doo, KIM Sang-Joon

Принадлежит:

Disclosed are a gas sensor member, a gas sensor using the same, and manufacturing methods thereof, and specifically, a gas sensor member using a one-dimensional porous metal oxide nanotube composite material having a double average pore distribution in which mesopores (0.1 nm to 50 nm) and macropores (50 nm to 300 nm) are simultaneously formed on the surface of a nanotube through decomposition of a spherical polymer sacrificial template and continuous crystallization and diffusion of a metal oxide and a nanoparticle catalyst embedded in an apoferritin is uniformly loaded in the inside and on the outer wall and inner wall of a one-dimensional metal oxide nanotube through a high-temperature heat treatment, a gas sensor using the same, and manufacturing methods thereof are disclosed. 1. A method for manufacturing a metal oxide nanotube composite sensing material loaded with a catalyst and having a double average surface pore distribution , the method comprising:(a) synthesizing a first dispersion solution in which metallic nanoparticle catalysts embedded in inner hollow structures of apoferritins and encapsulated in a protein are dispersed uniformly;(b) preparing an electrospinning solution by mixing the first dispersion solution with a second dispersion solution having a spherical polymer sacrificial templates dispersed therein and mixing the mixed dispersion solutions with a solvent having a metal oxide precursor and a polymer dissolved therein;(c) forming a composite nanofiber having a plurality of the spherical polymer sacrificial templates and the metallic nanoparticle catalysts embedded in the inner hollow structures of the apoferritins and encapsulated in the protein distributed on the surface and in the inside of the metal oxide precursor/polymer composite nanofiber from the electrospinning solution using an electrospinning method; and(d) forming a one-dimensional porous metal oxide nanotube having a circular or elliptical double surface pore distribution and ...

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Номер записи: 84

23-08-2018 дата публикации

PBNZT FERROELECTRIC FILM, SOL-GEL SOLUTION, FILM FORMING METHOD AND METHOD FOR PRODUCING FERROELECTRIC FILM

Номер: US20180240962A1

Автор: Honda Yuuji, Kijima Takeshi

Принадлежит: YOUTEC CO., LTD.

To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO, wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb as A-site ions and containing Zr and Ti as B-site ions, and the A-site contains Bi as A-site compensation ions and the B-site contains Nb as B-site compensation ions. 1. A method for producing a ferroelectric film comprising the steps of:preparing a sol-gel solution including a raw material solution including: a hydrolysis condensation polymerization of an alkoxide raw material including Pb, Bi, Nb, Zr and Ti and heteropolyacid; and polar solvents and unsaturated fatty acids;coating said sol-gel solution on a substrate to form a coated film on said substrate;subjecting said coated film to temporary burning at a temperature of 25 to 450° C. to form a ferroelectric material film on said substrate; andheat-treating said ferroelectric material film at a temperature of 450 to 800° C. to produce a ferroelectric film including a perovskite-structured ferroelectric substance obtained by crystallizing said ferroelectric material film.2. The method for producing a ferroelectric film according to claim 1 , wherein said ferroelectric film is a PBNZT ferroelectric film comprising a perovskite-structured ferroelectric substance represented by (PbBi)((TiZr)Nb)O claim 1 , wherein:X is 0.05 to 0.1; andY is 0.05 to 0.1.3. The method for producing a ferroelectric film according to claim 1 , wherein said ferroelectric film has a relative permittivity of 400 or more.4. A ferroelectric film being formed by the method for producing a ferroelectric film according to and having a relative permittivity of 400 or more. The present invention relates to a PBNZT ferroelectric film, a sol-gel solution, a film ...

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Номер записи: 85

23-07-2020 дата публикации

STANNOUS OXIDE POWDER AND METHOD FOR PRODUCING SAME

Номер: US20200231461A1

Автор: Imori Toru, TAKEMOTO Koichi

Принадлежит:

Provided is a method for producing stannous oxide, comprising a step of subjecting stannous sulfate to neutralization in an aqueous solution using ammonium carbonate or ammonium bicarbonate, and thereby precipitating stannous oxide. This production method is a novel means for producing stannous oxide in which chlorine, sulfur, sodium, and potassium are sufficiently reduced, and which has excellent solubility. 1. A method for producing stannous oxide , the method comprising a step of subjecting stannous sulfate to a neutralization reaction with ammonium carbonate or ammonium bicarbonate in an aqueous solution to deposit stannous oxide ,wherein the neutralization reaction is carried out in an aqueous solution having a pH in a range of from pH 6.0 to pH 8.0,wherein the step of subjecting stannous sulfate to the neutralization reaction to deposit stannous oxide comprises:subjecting stannous sulfate to the neutralization reaction at a temperature in a range of from 50 to 80° C.; andthen maintaining the aqueous solution subjected to the neutralization reaction at a temperature in a range of from 60 to 100° C. to deposit stannous oxide.2. (canceled)3. The method according to claim 1 , wherein the neutralization reaction is carried out by adding an aqueous stannous sulfate solution to an aqueous ammonium bicarbonate solution.4. The method according to claim 3 , wherein a concentration of ammonium bicarbonate in the aqueous ammonium bicarbonate solution is in a range of from 50 to 150 g/L.5. The method according to claim 3 , wherein a concentration of tin in the aqueous stannous sulfate solution is in a range of from 10 to 130 g/L.6. (canceled)7. The method according to any one of claim 1 , wherein the step of subjecting stannous sulfate to the neutralization reaction to deposit stannous oxide comprises:subjecting stannous sulfate to the neutralization reaction at a temperature in a range of from 50 to 80° C. for 1 to 10 hours; andthen maintaining the aqueous solution ...

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Номер записи: 86

09-09-2021 дата публикации

METHOD FOR PRODUCING METAL OXIDE PARTICLES, METHOD FOR PRODUCING DISPERSION OF METAL OXIDE PARTICLES, AND METHOD FOR PRODUCING INFRARED SHIELDING FILM

Номер: US20210276881A1

Автор: Higano Satoko, Yamasaki Kazuhiko

Принадлежит:

Production method for metal oxide fine particles includes: a step of mixing a fatty acid represented by CHO(n=5 to 14) and a metal source consisting of a metal, metal oxide, or metal hydroxide of at least two metal elements selected from the group consisting of Zn, In, Sn, and Sb to obtain a mixture; a step of heating the mixture at a temperature that is equal to or higher than a melting temperature of the fatty acid and lower than a decomposition temperature of the fatty acid to obtain a metal soap which is a precursor of metal oxide fine particles; and a step of heating the precursor at a temperature that is equal to or higher than a melting temperature of the precursor and lower than a decomposition temperature of the precursor to obtain metal oxide fine particles having an average particle diameter of 80 nm or less. 1. A method for producing metal oxide fine particles , the method comprising:{'sub': n', '2n', '2, 'a step of mixing a fatty acid represented by CHO(n=5 to 14) and a metal source consisting of a metal, metal oxide, or metal hydroxide of at least two metal elements selected from the group consisting of Zn, In, Sn, and Sb to obtain a mixture;'}a step of heating the mixture at a temperature that is equal to or higher than a melting temperature of the fatty acid and lower than a decomposition temperature of the fatty acid to obtain a metal soap which is a precursor of metal oxide fine particles; anda step of heating the precursor at a temperature that is equal to or higher than a melting temperature of the precursor and lower than a decomposition temperature of the precursor to obtain metal oxide fine particles having an average particle diameter of 80 nm or less.2. The method for producing metal oxide fine particles according to claim 1 , wherein the heating temperature for the mixture is set to be in a range of 130° C. to 250° C. claim 1 , and the heating temperature for the precursor is set to be in a range of 200° C. to 350° C.3. A method for ...

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Номер записи: 87

01-08-2019 дата публикации

METAL OXIDE NANOPARTICLES AS FILLABLE HARDMASK MATERIALS

Номер: US20190237329A1

Автор: CHANDHOK Manish, Gstrein Florian, KRYSAK Marie

Принадлежит:

A dielectric composition including a metal oxide particle including a diameter of 5 nanometers or less capped with an organic ligand at at least a 1:1 ratio. A method including synthesizing metal oxide particles including a diameter of 5 nanometers or less; and capping the metal oxide particles with an organic ligand at at least a 1:1 ratio. A method including forming an interconnect layer on a semiconductor substrate; forming a first hardmask material and a different second hardmask material on the interconnect layer, wherein at least one of the first hardmask material and the second hardmask material is formed over an area of interconnect layer target for a via landing and at least one of the first hardmask material and the second hardmask material include metal oxide nanoparticles; and forming an opening to the interconnect layer selectively through one of the first hardmask material and the second hardmask material. 1. A dielectric composition comprising:a metal oxide particle comprising a diameter of 5 nanometers or less capped with an organic ligand at at least a 1:1 ratio.2. The dielectric composition of claim 1 , wherein the metal oxide particles comprise a metal selected from hafnium claim 1 , zirconium claim 1 , titanium claim 1 , aluminum and tin.3. The dielectric composition of claim 1 , wherein the organic ligand comprises a carbonyl group claim 1 , C(O).4. The dielectric composition of claim 3 , wherein the organic ligand comprises the formula claim 3 , —C(O)R claim 3 , wherein R is C1-C10.5. The dielectric composition of claim 1 , further comprising a casting solvent claim 1 , wherein the metal oxide particles are dispersed in the casting solvent.6. A method comprising:synthesizing metal oxide particles comprising a diameter of 5 nanometers or less; andcapping the metal oxide particles with an organic ligand at at least a 1:1 ratio.7. The method of claim 6 , wherein synthesizing comprises a sol gel synthesis.8. The method of claim 6 , wherein ...

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Номер записи: 88

27-11-2014 дата публикации

DOUBLE-SIDED TRANSPARENT CONDUCTIVE FILM AND TOUCH PANEL

Номер: US20140345917A1

Автор: HASHIMOTO Naoki, Hiraoka Shinya, Ikai Kazuhiro, Kuramoto Hiroki, Takada Katsunori, Takao Hiroyuki, Tsuno Naoki, Umemoto Toru

Принадлежит: NITTO DENKO CORPORATION

Provided are a double-sided transparent conductive film which is good in appearance even when its transparent conductive layers are patterned, and has anti-blocking property, thereby being producible at low costs; a wound body thereof; and a touch panel. The double-sided transparent conductive film includes a base material film, and a base material film, and an optical adjusting layer and a transparent conductive layer which are formed in this order on each of both sides of the base material film, wherein an anti-blocking layer containing particles is formed at least one of: a location between the base material film and one optical adjusting layer; and a location between the base material film and the other optical adjusting layer, the anti-blocking layer has a flat portion and protrusion portions caused by the particles, and a value obtained by subtracting a thickness of the flat portion of the anti-blocking layer from a mode diameter of the particles is larger than a thickness of the optical adjusting layer. 1. A double-sided transparent conductive film , comprisinga base material film, andan optical adjusting layer and a transparent conductive layer which are formed in this order on each of both sides of the base material film,wherein an anti-blocking layer containing particles is formed at least one of:a location between the base material film and one optical adjusting layer; anda location between the base material film and the other optical adjusting layer,the anti-blocking layer has a flat portion and protrusion portions caused by the particles, anda value obtained by subtracting a thickness of the flat portion of the anti-blocking layer from a mode diameter of the particles is larger than a thickness of the optical adjusting layer.2. The double-sided transparent conductive film according to claim 1 , wherein the optical adjusting layers each have a thickness of 50 to 300 nm.3. The double-sided transparent conductive film according to claim 1 , wherein the ...

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Номер записи: 89

27-11-2014 дата публикации

IONIC LIQUID RELEASE COAT FOR USE IN METAL FLAKE MANUFACTURE

Номер: US20140350147A1

Автор: MOFFATT John

Принадлежит: ECKART AMERICA CORPORATION

A method of producing metal flakes (′) is provided. The method includes: applying a layer of ionic liquid () to a substrate (); forming a layer of metal () on the substrate () over the ionic liquid (); and removing the layer of metal () from the substrate (). 1. A method of producing metal flakes , said method comprising:applying a layer of ionic liquid to a substrate;forming a layer of metal on the substrate over the ionic liquid; andremoving the layer of metal from the substrate.2. The method of claim 1 , wherein said ionic liquid comprises:at least one of triisobutylmethyl tosylate, tributylethylphosphonium diethylphosphate, trihexyltetradecylphosphonium bis(2,4,4-trimethylpentyl)phosphinate, and 1-methyl-3-hexadecylimidazolium tosylate.3. The method of claim 1 , wherein forming the layer of metal includes:vapor depositing the layer of metal on the substrate over the ionic liquid in a vacuum chamber.4. The method of claim 3 , wherein the layer of ionic liquid is applied to the substrate in the vacuum chamber.5. The method of claim 3 , wherein the layer of ionic liquid is applied to the substrate outside the vacuum chamber.6. The method of claim 1 , wherein the layer of ionic liquid is applied by one of reverse-roll coating claim 1 , gravure coating claim 1 , flexographic coating and vapor deposition.7. The method of claim 1 , wherein the substrate comprises an outer rotating surface of a drum.8. The method of claim 1 , wherein the substrate comprises a flexible polymer carrier.9. The method of claim 8 , wherein removing the layer of metal from the substrate comprises at least one of shaking or vibrating the carrier.10. The method of claim 1 , wherein the layer of metal is removed from the substrate by mechanical abrasion with a tool.11. The method of claim 1 , wherein removing the layer of metal from the substrate at least partially breaks the layer of metal into flakes.12. The method of claim 1 , further comprising:collecting the flakes in a container, said ...

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Номер записи: 90

01-10-2015 дата публикации

TRANSPARENT CONDUCTIVE FILM HAVING IMPROVED VISIBILITY AND METHOD FOR MANUFACTURING SAME

Номер: US20150279501A1

Автор: Cho Jung, JUNG Keun, Kim In-Sook, KIM Kyung-Taek, Lee Min-Hee

Принадлежит:

The present invention relates to a transparent conductive film having improved visibility and, more specifically, to a transparent conductive film capable of improving pattern visibility by including inorganic particles in an undercoating layer so as to increase a refractive index of the undercoating layer and a method for manufacturing the same. The undercoating layer in a transparent conductive film of the present invention exhibits a refractive index that is higher than that of a silicon oxide layer formed by using a sputtering technique and is lower than that of a transparent conductive layer such that excellent pattern visibility can be obtained, and is formed by using a stable high-speed production method such that uniform thickness in the width direction can be obtained. 1. A transparent conductive film comprising:a transparent film;an undercoating layer formed on the transparent film; anda conductive layer formed on the undercoating layer,wherein the undercoating layer comprises inorganic particles, and a difference in index of refraction between the undercoating layer and the transparent film ranges from 0.15 to 0.30.2. The transparent conductive film according to claim 1 , wherein the inorganic particles comprise at least one selected from among ZnO claim 1 , TiO claim 1 , CeO claim 1 , SnO claim 1 , ZrO claim 1 , MgO claim 1 , and TaO.3. The transparent conductive film according to claim 1 , wherein the undercoating layer has an index of refraction of 1.45 to 1.80.4. The transparent conductive film according to claim 1 , wherein the undercoating layer has a thickness of 40 nm to 500 nm.5. The transparent conductive film according to claim 1 , wherein the undercoating layer is composed of a single layer.6. The transparent conductive film according to claim 1 , wherein the undercoating layer comprises 0.1 wt % to 10 wt % of the inorganic particles.7. The transparent conductive film according to claim 1 , wherein the transparent film is a monolayer or ...

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Номер записи: 91

11-12-2014 дата публикации

DOUBLE-SIDED TRANSPARENT CONDUCTIVE FILM HAVING EXCELLENT VISIBILITY AND A METHOD FOR MANUFACTURING THE SAME

Номер: US20140363649A1

Автор: Cho Jung, JUNG Keun, Kim In Sook, Kim Kyung Taek, Lee Min Hee

Принадлежит: LG HAUSYS, LTD.

A double-sided transparent conductive film and a method for manufacturing the same that may not only promote simplification of a touch panel structure and simplification of processes but also having an excellent visibility characteristic is presented. 1. A double-sided transparent conductive film comprising ,a transparent base layer;a first and a second hard coating layers respectively formed on both sides of the transparent base film;a first and a second undercoating layers sequentially laminated on the first hard coating layer;a third and a fourth undercoating layers sequentially laminated on the second hard coating layer; anda first and a second transparent conductive layers respectively formed on the second and the fourth undercoating layer.2. The double-sided transparent conductive film according to claim 1 , wherein the transparent base layer comprises one or more selected from PET (polyethylene terephthalate) claim 1 , PEN (polyethylenenaphthalate) claim 1 , PES (polyethersulfone) claim 1 , PC (Poly carbonate) claim 1 , PP (poly propylene) claim 1 , and norbornane resin.3. The double-sided transparent conductive film according to claim 1 , wherein the first and the second hard coating layers comprise one or more selected from acrylic claim 1 , urethane claim 1 , epoxy claim 1 , and siloxane polymer materials.4. The double-sided transparent conductive film according to claim 1 , wherein each of the first and the third undercoating layers has a first layer having refractive index of 1.40˜1.45 claim 1 , and a second layer having a second refractive index of 1.8˜2.0 on the first layer.5. The double-sided transparent conductive film according to claim 4 , wherein each of the second and the fourth undercoating layers has refractive index of 1.40˜1.45.6. The double-sided transparent conductive film according to claim 4 , wherein the total thickness of the first layer and the second layer of each of the first and the third undercoating layers is 20˜100 nm.7. The ...

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Номер записи: 92

29-08-2019 дата публикации

MECHANICALLY STABLE COMPOSITE ELECTROLYTE FOR INTERMEDIATE TEMPERATURE FUEL CELL WITH IMPROVED PROTON CONDUCTIVITY AND METHODS THEREOF

Номер: US20190263661A1

Автор: BOSE Anima B., Li Wei

Принадлежит: UNIVERSITY OF HOUSTON SYSTEM

A method of restoring the proton conductivity of a sintered pyrophosphate membrane of intermediate temperature fuel cells (IT-FCs) by introducing phosphoric acid into the sintered SnPOmembrane to react with the degraded SnPOspecies and thus restore the membrane pyrophosphate and proton conductivity. Such cells operate with low external humidification, and the active area of the cells may be fabricated up to 100 cmin size. 1. A method of restoring proton conductivity to a sintered pyrophosphate membrane , comprising:adding a phosphoric acid to the sintered pyrophosphate membrane, wherein said membrane comprises a pyrophosphate-decomposition product;reacting the phosphoric acid, and pyrophosphate-decomposition product to form a regenerated-pyrophosphate species; andrestoring the proton conductivity of the sintered pyrophosphate membrane comprising the regenerated-pyrophosphate species, wherein the proton conductivity is at least equivalent to the proton conductivity of a non-sintered pyrophosphate membrane.2. The method of claim 1 , wherein said sintered pyrophosphate is one of SnPO claim 1 , or SnInPO.3. The method of claim 1 , wherein pyrophosphate-decomposition product comprises SnO.4. The method of claim 1 , wherein the regenerated-pyrophosphate species comprise at least one of SnPO claim 1 , In-doped SnPO claim 1 , fused phosphoric acid; andphosphorus oxide.5. The method of claim 1 , wherein said restored proton conductivity of said sintered membrane is about 0.061 S cm−1 at 225° C.6. A sintered pyrophosphate membrane claim 1 , with a restored proton conductivity comprising:a regenerated-pyrophosphate species; anda fused phosphoric acid, wherein said sintered pyrophosphate membrane comprises a proton conductivity at least equivalent to a pyrophosphate membrane that is non-sintered.7. The sintered pyrophosphate membrane of claim 6 , wherein said membrane is between 1cmand 25 cm.8. The sintered pyrophosphate membrane of claim 6 , wherein said membrane comprises ...

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Номер записи: 93

08-10-2015 дата публикации

METHOD FOR COATING METALLIC SURFACES WITH NANOCRYSTALLINE TIN OXIDE LAYERS, AQUEOUS COMPOSITIONS THEREFOR AND USE OF THE SURFACES COATED IN THIS WAY

Номер: US20150284854A1

Автор: Grundmeier Guido, Özcan Özlem, SCHUBACH Peter

Принадлежит:

A method for coating metallic surfaces with an aqueous composition, which contains an aqueous solution of a zinc salt, by flooding, spraying and/or immersion, wherein, for spraying or immersion, the initial temperature of the substrate lies in the range from 5 to 400° C., in that, for flooding, the initial temperature of the substrate lies in the range from 100 to 400° C. and in that an anticorrosive nanocrystalline zinc oxide layer is formed on the metallic surface. Corresponding aqueous composition, the nanocrystalline zinc oxide layer and the use of the coated substrates are also disclosed. 120.-. (canceled)21. A method for coating metallic surfaces with an aqueous composition comprising an aqueous solution of a zinc salt by way of flooding , spraying and/or immersion , whereinthe initial substrate temperature for spraying or immersion is in the range from 5 to 400° C.,the initial substrate temperature for flooding is in the range from 100 to 400° C., and that a corrosion-resistant nanocrystalline zinc oxide coating is formed on the metallic surface.22. The method according to claim 21 , wherein the following aqueous composition is used claim 21 , in which the amount of zinc-containing compounds is indicated based on the amount of elemental zinc claim 21 , in which the remaining substances are indicated with the amount of said substances and in which an amount of compounds—2.a) or compounds 2.b) is required in which the zinc-free compounds 2.b) can be added if the composition pickles zinc-containing metallic surfaces under the selected conditions of use:a) 0 or 0.001 to 100 g/L of zinc-containing compounds 2.a) andb) 0 or 0.001 to 300 g/L of zinc-free compounds 2.b) and0 or 0.0001 to 50 g/L of dopant,0 or 0.0001 to 60 g/L of pH adjustment means and/or means for stabilizing the aqueous composition,0 or 0.001 to 10 g/L of binder and/or0 or 0.001 to 10 g/L of additives.23. The method according to claim 21 , wherein the metallic surface of the substrate has a ...

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Номер записи: 94

18-12-2014 дата публикации

PROCESSES FOR THE PREPARATION OF STANNIC OXIDE

Номер: US20140370292A1

Автор: Ceresa Alan C., Heckendorn Rene, Scherrer Elisabeth

Принадлежит: GABA INTERNATIONAL HOLDING AG

Disclosed herein are processes for oxidising Sndissolved in an aqueous solution to stannic compounds using NOand optionally Oas oxidants, wherein the aqueous solution is kept at a pH in the range of 0 to 7, wherein a salt Sn(X)and the oxidants are used according to the reaction scheme a Sn(X)+b O+c NO→stannic compounds in which scheme a, b and c are mole numbers; with the proviso that when b is essentially zero, then the aqueous solution is essentially free of Cl, HSOand SO. 1. A process for oxidising Sndissolved in an aqueous solution to stannic compounds using NOand optionally Oas oxidants , said dissolved Snbeing obtained from a salt Sn(X) , wherein Xdenotes a counter anion and n is an integer of 1 to 2; wherein during said oxidation said aqueous solution is kept at a pH in the range of 0 to 7 , and said salt Sn(X)and said oxidants are used according to the reaction scheme a Sn(X)+b O+c NO→stannic compounds in which scheme a , b and c are mole numbers; with the proviso that when b is essentially zero , then said aqueous solution is essentially free of Cl , HSOand SO.2. The process of claim 1 , wherein c is 0.05 to 0.5 times of a claim 1 , and b is greater than zero.3. The process of claim 2 , wherein b is at least equal to the difference a-c.4. The process of or claim 2 , wherein Sn(X)is selected from the group consisting of SnF claim 2 , SnCl claim 2 , SnBrand SnI.5. The process of claim 4 , wherein Sn(X)is SnF.6. The process of claim 1 , wherein b is essentially zero claim 1 , c is 0.5 to 1.5 times of a claim 1 , and Sn(X)is SnF.7. The process of one of to claim 1 , wherein the pH is kept in the range of 0 to 3.5 claim 1 , provided that the pH is kept low enough to obtain soluble stannic compounds dissolved in the solution and to prevent precipitate formation.8. The process of one of to claim 1 , wherein the pH is kept in the range of 2.0 to 6 claim 1 , provided that the pH is such as to precipitate nanoparticulate SnO.9. The process of claim 8 , wherein Sn(X) ...

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Номер записи: 95

06-10-2016 дата публикации

Method of Manufacturing Tin-Doped Indium Oxide Nanofibers

Номер: US20160289867A1

Автор: Amit K Naskar, Soydan Ozcan

Принадлежит: UT Battelle LLC

A method of making indium tin oxide nanofibers includes the step of mixing indium and tin precursor compounds with a binder polymer to form a nanofiber precursor composition. The nanofiber precursor composition is co-formed with a supporting polymer to form a composite nanofiber having a precursor composition nanofiber completely surrounded by the supporting polymer composition. The supporting polymer composition is removed from the composite nanofiber to expose the precursor composition nanofiber. The precursor composition nanofiber is then heated in the presence of oxygen such as O 2 to form indium tin oxide and to remove the binder polymer to form an indium tin oxide nanofiber. A method of making metal oxide nanofibers is also disclosed.

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Номер записи: 96

27-08-2020 дата публикации

PROCESS FOR PRODUCING RADIOACTIVE DRY SN-117M TETRAIODIDE RADIOCHEMICAL

Номер: US20200270140A1

Автор: Sandlin Zechariah David, Simon Jaime, Stevenson Nigel R.

Принадлежит:

Described are methods and compositions for processes of preparing a radioactive solution of Sn-117m tetraiodide. Aspects include reacting a radioactive solid Sn containing Sn-117m with a solution of Iin an organic solvent at a temperature and for a duration sufficient to result in the formation of Sn-117m tetraiodide. Then, the organic solvent is removed by evaporation to leave dry Sn-117m tetraiodide. The organic solvent is a low boiling point solvent capable of dissolving Iand Sn tetraiodide. The organic solvent is selected from the group consisting of an alcohol and a chlorinated solvent. In embodiments may be selected from the group consisting of dichloromethane, trichloromethane, tetrachloromethane, or mixtures thereof. In embodiments, the organic solvent excludes alcohol. The Imay be in a slight molar excess to the radioactive solid Sn. The method may further include distilling the reactants to remove excess Ifrom the distillate. 1. A process for preparing a radioactive solution of Sn-117m tetraiodide comprising:{'sub': '2', 'reacting a radioactive solid Sn containing Sn-117m with a solution of Iin an organic solvent at a temperature and for a duration sufficient to result in the formation of Sn-117m tetraiodide; and'}evaporating the organic solvent to leave dry Sn-117m tetraiodide.2. The process of wherein the organic solvent is a low boiling point solvent capable of dissolving Iand Sn tetraiodide.3. The process of wherein the organic solvent is selected from the group consisting of an alcohol and a chlorinated solvent.4. The process of wherein the organic solvent is selected from the group consisting of dichloromethane claim 1 , trichloromethane claim 1 , tetrachloromethane claim 1 , or mixtures thereof.5. The process of wherein the organic solvent is dichloromethane.6. The process of wherein the organic solvent excludes alcohol.7. The process of wherein the Iis in a slight molar excess to the radioactive solid Sn.8. The process of wherein the slight molar ...

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Номер записи: 97

25-12-2014 дата публикации

TRANSPARENT CONDUCTING OXIDES

Номер: US20140377479A1

Автор: ABELL John Stuart, AL-MAMOURI Malek Moshari, Edwards Peter P., JONES Martin

Принадлежит:

The invention provides a transparent conducting film which comprises a compound of formula (I): Zn[M]O[X](I) wherein: x is greater than 0 and less than or equal to 0.25; y is from 0 to 0.1; [X] is at least one dopant element which is a halgen; and [M] is: (a) a dopant element which is selected from: a group 14 element other than carbon; a lanthanide element which has an oxidation state of +4; and a transition metal which has an oxidation state of +4 and which is other than Ti or Zr; or (b) a combination of two or more different dopant elements, at least one of which is selected from: a group 14 element other than carbon; a lanthanide element which has an oxidation state of +4; and a transition metal which has an oxidation state of +4 and which is other than Ti or Zr. The invention further provides coatings comprising the films of the invention, processes for producing such films and coatings, and various uses of the films and coatings. 1. A transparent conducting film which comprises a compound of formula (I):{'br': None, 'sub': 1-x', 'x', '1-y', 'y, 'Zn[M]O[X]\u2003\u2003(I)'} x is greater than 0 and less than or equal to 0.25;', 'y is from 0 to 0.1;', '[X] is at least one dopant element which is a halogen; and', '[M] is:, 'wherein a group 14 element other than carbon;', 'a lanthanide element which has an oxidation state of +4; and', 'a transition metal which has an oxidation state of +4 and which is other than Ti or Zr; or, '(a) a dopant element which is selected from a group 14 element other than carbon;', 'a lanthanide element which has an oxidation state of +4; and', 'a transition metal which has an oxidation state of +4 and which is other than Ti or Zr., '(b) a combination of two or more different dopant elements, at least one of which is selected from2. A transparent conducting film according to wherein when [M] is a combination of two or more different dopant elements claim 1 , none of said elements is Ga.3. A transparent conducting film according to which ...

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Номер записи: 98

13-10-2016 дата публикации

Rod shaped crystal of sulfide compound semiconductor

Номер: US20160300966A1

Автор: Haijun Tao, Kazumichi Yanagisawa, Keisuke Kishita, Sumio Kamiya

Принадлежит: Kochi University NUC, Toyota Motor Corp

The present invention provides a method of producing a sulfide compound semiconductor containing Cu, Zn, Sn and S, in which the method includes a solvothermal step of conducting a solvothermal reaction of Cu, Zn, Sn and S in an organic solvent, and a rod-like crystal of sulfide compound semiconductor containing Cu, Zn, Sn and S.

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Номер записи: 99

25-10-2018 дата публикации

HALOGEN-CONTAINING TIN OXIDE PARTICLES AND PRODUCTION METHOD THEREOF

Номер: US20180305217A1

Автор: Aoki Akira, Suzuoka Kenji, YONEDA Yoshihiro

Принадлежит: Mitsui Mining & Smelting Co., Ltd.

These halogen-containing tin oxide particles have a BET specific surface area of 25-100 m/g and a crystallite diameter of 8-30 nm. The particles optimally contain 0.01-0.75 mass % halogen. Fluoline is optimally contained as the halogen. Optimally, the particles additionally contain tantalum, niobium, phosphorus, antimony, tungsten, or molybdenum. The volume resistivity is optimally - Ω·cm. 1. Halogen-containing tin oxide particles having a BET specific surface area from 25 m/g to 100 m/g and a crystallite diameter from 8 nm to 30 nm , the halogen-containing tin oxide particles comprising halogen in an amount from 0.01 mass % to 0.75 mass %.2. The halogen-containing tin oxide particles according to claim 1 , comprising fluorine as the halogen.3. The halogen-containing tin oxide particles according to claim 1 , further comprising tantalum claim 1 , niobium claim 1 , phosphorus claim 1 , antimony claim 1 , tungsten claim 1 , or molybdenum.4. The halogen-containing tin oxide particles according to claim 1 , having a volume resistivity from 0.1 to 1000 Ω·cm.5. The halogen-containing tin oxide particles according to claim 1 , wherein a value of D/Dthat is a ratio between a crystallite diameter Dand a diameter Dconverted from a BET specific surface area is 0.55 or greater.6. A method for producing halogen-containing tin oxide particles claim 1 , comprising:neutralizing a halogen-containing aqueous solution containing a divalent tin compound with an alkali to form a slurry containing a tin oxide precursor;oxidizing the precursor; andperforming hydrothermal treatment on the slurry containing the oxidized precursor under a high-temperature-high-pressure condition in which a temperature is 270° C. or higher and pressure is 20 MPa or higher.7. The method for producing halogen-containing tin oxide particles according to claim 6 , wherein the slurry containing the precursor is mixed with an oxidant to oxidize the precursor.8. The method for producing halogen-containing tin oxide ...

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Номер записи: 100