Apparatus and method for manufacturing vitreous silica crucible

There are provided an apparatus and a method for manufacturing a vitreous silica crucible which can prevent the deterioration of the inner surface property in the manufacturing process of a vitreous silica crucible. The apparatus includes a mold defining an outer shape of a vitreous silica crucible, and an arc discharge unit having electrodes and a power-supply unit, wherein each of the electrodes includes a tip end directed to the mold, the other end opposite to the tip end, and a bent portion provided between the tip end and the other end.

Vitreous silica crucible

The present invention provides a vitreous silica crucible which can suppress buckling and sidewall lowering of the crucible without fear of mixing of impurities into silicon melt. According to the present invention, provided is a vitreous silica crucible for pulling a silicon single crystal, wherein a ratio I2/I1 is 0.67 to 1.17, where I1 and I2 are area intensities of the peaks at 492 cm −1 and 606 cm −1 , respectively, in Raman spectrum of vitreous silica of the region having a thickness of 2 mm from an outer surface to an inner surface of a wall of the crucible.

Vitreous silica crucible

The present invention provides a vitreous silica crucible which can suppress buckling and sidewall lowering of the crucible and the generation of cracks. According to the present invention, a vitreous silica crucible is provided for pulling a silicon single crystal having a wall, the wall including a non-doped inner surface layer made of natural vitreous silica or synthetic vitreous silica, a mineralizing element-maldistributed vitreous silica layer containing dispersed island regions each containing a mineralizing element, and wherein the vitreous silica of the island regions and the vitreous silica of a surrounding region of the island regions is a combination of mineralizing element-doped natural vitreous silica and non-doped synthetic vitreous silica, or a combination of mineralizing element-doped synthetic vitreous silica and non-doped natural vitreous silica, and the inner surface layer is made of vitreous silica of a different kind from that of the island region.

Composite crucible, method of manufacturing the same, and method of manufacturing silicon crystal

The purpose of the present invention is to provide a crucible which has high viscosity at high temperature, and can be used for a long time, and can be manufactured at low cost, and a method of manufacturing the same. The composite crucible 10 is characterized in the use of mullite (3Al 2 O 3 .2SiO 2 ) as the basic material of the crucible. The composite crucible 10 has the crucible body 11 made of mullite material whose main component is alumina and silica, and a transparent vitreous silica layer 12 formed on the inner surface of the crucible body 11 . The thickness of the transparent vitreous silica layer 12 is smaller than that of the crucible body 11 . The crucible body 11 can be formed by the slip casting method, and the transparent vitreous silica layer 12 can be formed by the thermal spraying method.

Vitreous silica crucible for pulling silicon single crystal and method of manufacturing the same

The present invention provides a vitreous silica crucible which can suppress the sidewall lowering of the crucible under high temperature during pulling a silicon single crystal, and a method of manufacturing such a vitreous silica crucible. The vitreous silica crucible 10 includes an opaque vitreous silica layer 11 provided on the outer surface side of the crucible and containing numerous bubbles, and a transparent vitreous silica layer 12 provided on the inner surface side. The opaque vitreous silica layer 11 includes a first opaque vitreous silica portion 11 a provided on the crucible upper portion, and a second opaque vitreous silica portion 11 b provided on the crucible lower portion. The specific gravity of the second opaque vitreous silica portion 11 b is 1.7 to 2.1, and the specific gravity of the first opaque vitreous silica portion 11 a is 1.4 to 1.8, and smaller than that of the second opaque vitreous silica portion. The particle size distribution of the material silica powder for the first opaque vitreous silica portion 11 a is wider than that of the second opaque vitreous silica portion 11 b, and the material silica powder for the first opaque vitreous silica portion 11 a includes more fine powder than that for the second opaque vitreous silica portion 11 b.

Method and apparatus for manufacturing vitreous silica crucible

Accurate temperature measurement during manufacturing a vitreous silica crucible is enabled. The present invention provides an apparatus for manufacturing a vitreous silica crucible including: a mold for forming a silica powder layer by supplying silica powder therein; an arc discharge unit having carbon electrodes and a power supply unit and for heating and fusing the silica powder layer by arc discharge; and a temperature measurement unit for measuring temperature of a fused portion in the mold, wherein the temperature measurement unit is an radiation thermometer for measuring temperature by detecting radiation energy of a wavelength of 4.8 to 5.2 μm.

Method of manufacturing vitreous silica crucible

There is provided a method of manufacturing a vitreous silica crucible having a suitably controlled inner surface property. The present invention provides a method of manufacturing a vitreous silica crucible by heating and fusing a silica powder layer in a rotating mold by arc discharge generated by carbon electrodes including: a preparation process for determining optimal fusing temperatures during heating and fusing the silica powder layer at plural points of different heights of the silica powder layer; a temperature measuring process for measuring actual temperatures during heating and fusing the silica powder layer at the plural points; a temperature controlling process for controlling the actual temperatures at the plural points so that the actual temperatures matches the optimal fusing temperatures at the respective points.

Vitreous silica crucible and method of manufacturing the same

Provided is a method of manufacturing a vitreous silica crucible for pulling a silicon single crystal which can suppress melt surface vibration of silicon melt filled therein and has a long lifetime. The crucible includes a peripheral wall portion, a curved portion and a bottom portion, and has a plurality of micro recesses on the specific region of the inner surface of the peripheral wall portion.

Apparatus for manufacturing vitreous silica crucible

During fabrication of a vitreous silica crucible, contamination of the vitreous silica crucible due to wear particles and debris of components of an apparatus for manufacturing a vitreous silica crucible is reduced by preventing damage and wear of the components of the apparatus due to silica fume. The apparatus for manufacturing a vitreous silica crucible is divided into a lower section for accommodating a mold and a mold driving system and an upper section for accommodating an arc electrode driving system, wherein a sectioning member including one or more communication paths for allowing penetration of arc electrodes, thereby the air flow is controlled so as to reduce exchange between gas in the upper section and gas in the lower section.

Porous Glass Articles Formed Using Cold Work Process

Glass articles and methods for making the articles are provided. The glass articles are comprised of microscopic glass particles bound together to form an interconnected porous network within the articles. The porous interconnected network of fused glass particles provides an apparent porosity to the article, and thereby the ability to deliver water uniformly throughout the glass article via capillary forces. 1. A method for forming a glass article comprising a porous interconnected network of fused glass particles that has an apparent porosity of 1-55% , the method comprising the steps of:(a) providing a dry precursor in a mold, said dry precursor comprising a glass powder having a particle size of from 0.001-2200 microns;(b) packing the dry precursor in the mold; and (i) heating at a first rate to a first temperature and holding for a first hold time;', '(ii) heating at a second rate to a second temperature and holding for a second hold time, wherein the second temperature is greater than the first temperature;', '(iii) cooling by convection at a third rate to a third temperature and holding for a third hold time, wherein the third temperature is less than the first temperature; and, '(c) heating the dry precursor in the mold to produce a glass article, wherein heating the dry precursor comprises a first heating schedule that includes at least the sequential steps of(iv) cooling by convection at a fourth rate to a fourth temperature and holding for a fourth hold time, wherein the fourth temperature is less than the third temperature.2. The method of claim 1 , wherein the first temperature is 1150° F. or less claim 1 , the second temperature is 1495° F. or less claim 1 , the third temperature is 805° F. or less claim 1 , and the fourth temperature is 230° F. or less.3. The method of claim 1 , wherein the dry precursor comprises a particle binder selected from the group consisting of a polysaccharide claim 1 , an oligosaccharide claim 1 , a disaccharide claim 1 , a ...

CARBON CRUCIBLE

A carbon crucible prevents leakage of SiO gas from a boundary portion between a straight trunk portion and a tray portion and prevents SiC formation from quickly developing. A carbon crucible () for retaining a quartz crucible () used in a metal single crystal pulling apparatus for silicon or the like has a straight trunk portion () and a tray portion () that are divided from each other. A graphite sheet () is disposed between the quartz crucible () and the carbon crucible () so as to cover at least a boundary portion (A) of an inner surface of the carbon crucible () between the straight trunk portion () and the tray portion (). The graphite sheet () is an expanded graphite sheet. 1. A carbon crucible having a straight trunk portion and a tray portion divided from each other , characterized in that a graphite sheet is disposed so as to cover at least a boundary portion of an inner surface of the carbon crucible between the straight trunk portion and the tray portion.2. The carbon crucible according to claim 1 , wherein the graphite sheet is an expanded graphite sheet.3. The carbon crucible according to claim 1 , wherein the graphite sheet has an ash content of 100 ppm or less.4. The carbon crucible according to claim 1 , wherein the straight trunk portion is made of a carbon fiber-reinforced carbon composite material claim 1 , and the graphite sheet is disposed so as to cover an entire inner surface of the straight trunk portion in addition to the boundary portion.5. The carbon crucible according to claim 1 , wherein the straight trunk portion comprises a plurality of graphite divided pieces divided from each other claim 1 , and the graphite sheet is disposed so as to cover an entire inner surface of the straight trunk portion in addition to the boundary portion.6. The carbon crucible according to claim 1 , wherein the tray portion comprises a bottom portion and a curved surface-shaped portion connected from the bottom portion to the straight trunk portion claim 1 , ...

QUARTZ GLASS CRUCIBLE, METHOD FOR PRODUCING THE SAME, AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL

Described herein is a method for producing a quartz glass crucible, including the steps of: preparing a crucible base material that is made of quartz glass and has a crucible shape; producing a synthetic quartz glass material by the direct process or the soot process; processing the synthetic quartz glass material into a crucible shape without pulverizing the synthetic quartz glass material; and welding the synthetic quartz glass material processed into the crucible shape to the inner surface of the crucible base material. As a result, there are provided a quartz glass crucible that avoids generation of dislocation in a silicon single crystal, the generation of dislocation caused by the crucible itself, at the time of production of a silicon single crystal and has high heat resistance, a method for producing the quartz glass crucible, and a method for producing a silicon single crystal, the method using such a quartz glass crucible. 113-. (canceled)14. A method for producing a quartz glass crucible , comprising the steps of:preparing a crucible base material that is made of quartz glass and has a crucible shape;producing a synthetic quartz glass material by a direct process or a soot process;processing the synthetic quartz glass material into a crucible shape without pulverizing the synthetic quartz glass material; andwelding the synthetic quartz glass material processed into the crucible shape to an inner surface of the crucible base material.15. The method for producing a quartz glass crucible according to claim 14 , whereinthe welding is performed at the same time by the application of heat performed when the synthetic quartz glass material processed into the crucible shape is placed inside the crucible base material, the inside of the synthetic quartz glass material is filled with polycrystalline silicon, and the polycrystalline silicon is melted in a silicon single crystal pulling apparatus.16. The method for producing a quartz glass crucible according to claim ...

SILICA CONTAINER AND METHOD FOR PRODUCING THE SAME

A method for producing a silica container includes forming a preliminarily molded substrate, wherein a first powdered raw material is fed to an inner wall of an outer frame having aspiration holes while rotating the outer frame; forming a preliminarily molded intermediate layer, wherein a second powdered raw material added with an aluminum compound or a crystal nucleating agent as an additive is fed to an inner wall of the preliminarily molded substrate; and forming an inner layer, wherein the preliminarily molded substrate and the preliminarily molded intermediate layer are degassed by aspiration from a peripheral side with heating from an inside forming a substrate and an intermediate layer, and a third powdered raw material having a high silica purity is spread from inside the substrate having the formed intermediate layer with heating from the inside forming an inner layer on an inner surface of the intermediate layer. 1. A method for producing a silica container comprising at least a substrate comprised of a silica as its main component and having a rotational symmetry , an intermediate layer formed on an inner wall of the substrate , and an inner layer formed on an inner wall of the intermediate layer , wherein the method comprises:a step of preparing a first powdered raw material, silica particles, for forming the substrate,a step of adding, as an additive, at least any one of an aluminum compound and a powdered compound capable of becoming a crystal nucleating agent for crystallization of a silica glass, into a second powdered raw material, silica particles, for forming the intermediate layer,a step of forming a preliminarily molded substrate, wherein the first powdered raw material is fed to an inner wall of an outer frame having a rotational symmetry and aspiration holes arranged splittingly in the inner wall while rotating the outer frame thereby preliminarily molding to an intended shape in accordance with the inner wall of the outer frame,a step of ...

SILICA CONTAINER AND METHOD FOR PRODUCING THE SAME

Producing a silica container includes forming a powder mixture by adding an Al compound or a crystal nucleating agent into a first powdered raw material; preliminarily molding to an intended shape by feeding the powder mixture to an inner wall of an outer frame while rotating the outer frame having aspiration holes; forming a silica substrate; and forming a transparent silica glass layer on an inner surface of the silica substrate, wherein the preliminarily molded article is degassed by aspiration from a peripheral side and heated from inside the preliminarily molded article at high temperature making a peripheral part of the preliminarily molded article to a sintered body while an inner part to a fused glass body, and a second powdered raw material having a higher silica purity than the first powdered raw material is spread from inside the silica substrate and heated from the inside at high temperature. 1. A method for producing a silica container , the method for producing a silica container comprised of a silica as its main component and having a rotational symmetry , comprising at least:a step of forming a powder mixture by adding at least any one of an Al compound and a powdered compound capable of becoming a crystal nucleating agent for crystallization of a silica glass, into a first powdered raw material, silica particles,a step of forming a preliminarily molded article, wherein the powder mixture is fed to an inner wall of an outer frame having a rotational symmetry and aspiration holes arranged splittingly in the inner wall while rotating the outer frame thereby preliminarily molding the powder mixture to an intended shape in accordance with the inner wall of the outer frame,a step of forming a silica substrate, wherein the preliminarily molded article is degassed by aspiration from a peripheral side through the aspiration holes formed in the outer frame and at the same time heated from inside the preliminarily molded article by a discharge-heat melting ...

Silica container and method for producing the same

A silica container contains a substrate having a rotational symmetry, containing mainly a silica, and gaseous bubbles in a peripheral part of the substrate; a transparent silica glass in an inner peripheral part of the substrate; and an inner layer, formed on an inner surface of the substrate and containing a transparent silica glass; wherein the substrate contains Li, Na, and K in a total concentration of 50 or less ppm by weight; the substrate has a linear light transmittance of 91.8% to 93.2% at a light wavelength of 600 nm; the inner layer contains Li, Na, and K in a total concentration of 100 or less ppb by weight and at least one of Ca, Sr, and Ba in a total concentration of 50 to 2000 ppm by weight; and the inner layer has a linear light transmittance of 91.8% to 93.2% at a light wavelength of 600 nm.

GRAPHITE CRUCIBLE FOR SINGLE CRYSTAL PULLING APPARATUS AND METHOD OF MANUFACTURING SAME

A graphite crucible () for retaining a quartz crucible () has a graphite crucible substrate () as a graphite crucible forming material, and a coating film () made of a carbonized phenolic resin and formed over the entire surface of the graphite crucible substrate (). The phenolic resin is impregnated inside open pores () existing in a surface of the graphite crucible substrate (). The coating film () may be formed only within a portion of the graphite crucible in which SiC formation can occur easily, not over the entirety of the surface of the graphite crucible. For example, it is possible to deposit the film only on the entire inner surface of the crucible. It is also possible to deposit the film only on a curved portion (sharply curved portion) of the inner surface, or only on a curved portion and a straight trunk portion. 112-. (canceled)13. A graphite crucible for single crystal pulling apparatus , characterized in that a phenolic resin impregnated in open pores existing in a surface of a graphite crucible substrate is carbonized.14. The graphite crucible for single crystal pulling apparatus according to claim 13 , wherein a coating film of the carbonized phenolic resin has an average thickness of 10 μm or less.15. A method of manufacturing a graphite crucible for single crystal pulling apparatus claim 13 , characterized by comprising the steps of:immersing a graphite crucible substrate in a phenolic resin solution under room temperature and normal pressure;curing the phenolic resin by taking out and heat-treating the immersed graphite crucible substrate; andcarbonizing the phenolic resin by subjecting the cured phenolic resin to a further heat treatment.16. The method of manufacturing a graphite crucible for single crystal pulling apparatus according to claim 15 , further comprising claim 15 , prior to the curing step claim 15 , the step of wiping off an excessive amount of the phenolic resin on a surface of the graphite crucible substrate.17. The method of ...

Silica glass crucible, method for manufacturing same, and method for manufacturing silicon single crystal

A method for manufacturing a silica glass crucible, includes: preparing a crucible base material that is made of silica glass and has a crucible shape; fabricating a synthetic silica glass material based on a direct method or a soot method; processing the synthetic silica glass material into the crucible shape without being pulverized; and bonding an inner wall of the crucible base material and an outer wall of the synthetic silica glass material processed into the crucible shape through a silica powder by performing a heat treatment. As a result, it is possible to provide the silica glass crucible that can avoid occurrence of dislocations of silicon single crystal at the time of manufacturing the silicon single crystal, has high heat-resisting properties, and can suppress a reduction in productivity and yield ratio, the manufacturing method thereof, and the method for manufacturing silicon single crystal using such a silica glass crucible.

SILICA CONTAINER FOR PULLING SINGLE CRYSTAL SILICON AND METHOD FOR PRODUCING THE SAME

The present invention is directed to a silica container for pulling single crystal silicon, the silica container including a straight body portion, a curved portion, and a bottom portion, wherein the outside of the silica container is made of opaque silica glass containing gaseous bubbles, the inside of the silica container is made of transparent silica glass containing substantially no gaseous bubble, and, on the inner surface of the bottom portion, a silica glass layer containing the OH group in a concentration of more than 300 ppm by mass but 3000 ppm by mass or less, the silica glass layer having a thickness of 20 μm or more but 1000 μm or less, is formed. As a result, a low-cost silica container for pulling single crystal silicon, the silica container that can reduce cavity defects called voids and pinholes in pulled single crystal silicon, is provided. 110-. (canceled)11. A single-crystal silicon pulling silica container , the silica container comprising a straight body portion , a curved portion , and a bottom portion , whereinan outside of the silica container is made of opaque silica glass containing gaseous bubbles,an inside of the silica container is made of transparent silica glass containing substantially no gaseous bubble, andon an inner surface of the bottom portion, a silica glass layer containing the OH group in a concentration of more than 300 ppm by mass but 3000 ppm by mass or less, the silica glass layer having a thickness of 20 μm or more but 1000 μm or less, is formed.12. The single-crystal silicon pulling silica container according to claim 11 , whereinthe silica glass layer formed on the inner surface of the bottom portion is made of synthetic silica glass.13. The single-crystal silicon pulling silica container according to claim 11 , whereinthe silica glass layer formed on the inner surface of the bottom portion contains the OH group in a concentration of 500 ppm by mass or more but 1500 ppm by mass or less and has a thickness of 50 μm or ...

SINGLE-CRYSTAL SILICON PULLING SILICA CONTAINER AND MANUFACTURING METHOD THEREOF

The present invention provides a single-crystal silicon pulling silica container including an outer layer made of opaque silica glass containing gaseous bubbles and an inner layer made of transparent silica glass that does not substantially contain the gaseous bubbles; the container also including: a bottom portion, a curved portion, and a straight body portion, wherein continuous grooves are formed on a surface of the inner layer from at least part of the bottom portion to at least part of the straight body portion through the curved portion. As a result, there are provided the single-crystal silicon pulling silica container that can reduce defects called voids or pinholes in the pulled single-crystal silicon and a method for manufacturing such a silica container. 115-. (canceled)16. A single-crystal silicon pulling silica container comprising an outer layer made of opaque silica glass containing gaseous bubbles and an inner layer made of transparent silica glass that does not substantially contain the gaseous bubbles , the container also comprising: a bottom portion , a curved portion , and a straight body portion ,wherein continuous grooves are formed on a surface of the inner layer from at least part of the bottom portion to at least part of the straight body portion through the curved portion.17. The single-crystal silicon pulling silica container according to claim 16 ,wherein the grooves are formed to reach a center of the bottom portion.18. The single-crystal silicon pulling silica container according to claim 16 ,wherein the grooves are not formed in a central part of the bottom portion.19. The single-crystal silicon pulling silica container according to claim 16 ,wherein the grooves are formed in a netlike pattern or a radial pattern on the bottom portion and the curved portion, the radial pattern being centered on a center of the bottom portion.20. The single-crystal silicon pulling silica container according to claim 17 ,wherein the grooves are formed in ...

METHOD OF LOADING A CHARGE OF POLYSILICON INTO A CRUCIBLE

A method of loading a crucible includes loading a first layer of polysilicon chunks into the crucible and loading a second layer of granular polysilicon into the crucible to form a polysilicon charge such that the packing density of the polysilicon charge within the crucible is greater than 0.70. 1. A method of loading a crucible , comprising:loading a first layer of polysilicon chunks into the crucible;loading a second layer of granular polysilicon into the crucible such that the packing density of polysilicon within the crucible is greater than about 0.70.2. A method of loading a crucible according to claim 1 , further comprising loading a third layer of polysilicon particles into the crucible claim 1 , wherein the polysilicon particles are smaller than the polysilicon chunks and larger than the polysilicon granules.3. A method of loading a crucible according to claim 1 , wherein the crucible is loaded such that the packing density of polysilicon within the crucible is between about 0.70 and about 0.90.4. A method of loading a crucible according to claim 1 , further comprising classifying bulk polysilicon material into the polysilicon chunks having a large particle dimension and polysilicon granules having a small particle dimension claim 1 , wherein a ratio of the large particle dimension to the small particle dimension is greater than about 7:1.5. A method of loading a crucible according to claim 4 , wherein the ratio of the large particle dimension to the small particle dimension is about 10:1.6. A method of loading a crucible according to claim 4 , wherein the ratio of the large particle dimension to the small particle dimension is about 100:1.7. A method of loading a crucible according to claim 1 , further comprising loading a third quantity of polysilicon particles into the crucible such that the following equation is satisfied:{'br': None, 'sub': C', 'L', 'L', 'M', 'L', 'M', 'S, 'PD=PD+(1−PD) PD+(1−PD) (1−PD) PD,'}wherein:{'sub': 'C', 'PDis the packing ...

SILICA GLASS CRUCIBLE

Buckling of a vitreous silica crucible or inward fall of a sidewall is effectively suppressed. The vitreous silica crucible includes the cylindrical sidewall having an upward-opening rim, a mortar-shaped bottom including a curve, and a round portion connecting the sidewall and the bottom In the vitreous silica crucible the per-unit area thermal resistance in the thickness direction of the sidewall is higher than that of the round portion 1. A vitreous silica crucible for pulling single crystal silicon , comprising:a cylindrical sidewall having an upward-opening rim;a mortar-shaped bottom including a curve; anda round portion connecting the sidewall and the bottom, whereina per-unit area thermal resistance in a thickness direction of the sidewall is higher than a per-unit area thermal resistance in a thickness direction of the round portion.2. The vitreous silica crucible of claim 1 , wherein the per-unit area thermal resistance in the thickness direction of the round portion is higher than a per-unit area thermal resistance in a thickness direction of the bottom.3. The vitreous silica crucible of claim 1 , whereinthe vitreous silica crucible has two or more layers including a bubble-containing vitreous silica layer and a transparent vitreous silica layer, andthe bubble-containing vitreous silica layer of the sidewall is larger in thickness than the bubble-containing vitreous silica layer of the round portion.4. The vitreous silica crucible of claim 3 , wherein the bubble-containing vitreous silica layer of the round portion is larger in thickness than the bubble-containing vitreous silica layer of the bottom.5. The vitreous silica crucible of claim 1 , wherein the vitreous silica crucible has two or more layers comprising dissimilar materials having different thermal conductivities.6. The vitreous silica crucible of claim 5 , wherein of the two or more layers claim 5 , an outer layer contains aluminum as an impurity.7. The vitreous silica crucible of claim 5 , ...

PRODUCTION APPARATUS OF SiC SINGLE CRYSTAL BY SOLUTION GROWTH METHOD, METHOD FOR PRODUCING SiC SINGLE CRYSTAL USING THE PRODUCTION APPARATUS, AND CRUCIBLE USED IN THE PRODUCTION APPARATUS

A region of an SiC solution in the vicinity of an SiC seed crystal is cooled while suppressing the temperature variation in a peripheral region of the SiC solution. An apparatus includes a seed shaft and a crucible for an SiC solution. The seed shaft has a lower end surface for attachment to an SiC seed crystal. The crucible comprises a main body, an intermediate cover, and a top cover. The main body includes a first cylindrical portion and a bottom portion at a lower end portion of the first cylindrical portion. The intermediate cover is within the first cylindrical portion and above the liquid level of the SiC solution in the main body. The intermediate cover has a first through hole for the seed shaft. The top cover is disposed above the intermediate cover and has a second through hole for the seed shaft to pass through. 1. A production apparatus of an SiC single crystal by a solution growth method , comprising:a seed shaft having a lower end surface to which an SiC seed crystal is to be attached; anda crucible for accommodating an SiC solution, whereinthe crucible comprising:a main body including a first cylindrical portion, and a bottom portion disposed at a lower end portion of the first cylindrical portion;an intermediate cover disposed within the first cylindrical portion and above the liquid level of the SiC solution in the main body, the intermediate cover having a first through hole through which the seed shaft is to be passed; anda top cover disposed above the intermediate cover, the top cover having a second through hole through which the seed shaft is to be passed.2. The production apparatus according to claim 1 , whereinthe intermediate cover further comprises a second cylindrical portion extending downwardly from the lower surface of the intermediate cover, the seed shaft being adapted to pass through the second cylindrical portion, and the second cylindrical portion having a lower end located apart from the liquid level of the SiC solution.3. The ...

GLASS-CERAMIC MATRIX COMPOSITE FEEDSTOCK AND FORMING

A method of forming a part includes forming a glass-ceramic matrix composite material to form a pre-consolidated feedstock sheet with a pre-determined shape. The pre-consolidated feedstock sheet is sectioned into a first piece of pre-consolidated feedstock sheet and a second piece of pre-consolidated feedstock sheet. The first piece of pre-consolidated feedstock sheet and a second piece of pre-consolidated feedstock sheet are assembled with a second piece of pre-consolidated feedstock sheet to form a composite layup. The first piece of pre-consolidated feedstock sheet and the second piece of pre-consolidated feedstock sheet are joined by compressing the composite layup to form a glass-ceramic matrix composite part. 1. A method of forming a part , the method comprising:forming a glass-ceramic matrix composite material into a pre-consolidated feedstock sheet with a pre-determined shape;sectioning the pre-consolidated feedstock sheet into a first piece of pre-consolidated feedstock sheet and a second piece of pre-consolidated feedstock sheet;assembling the first piece of pre-consolidated feedstock sheet and the second piece of pre-consolidated feedstock sheet to form a composite layup; andjoining the one of the plurality of pieces of pre-consolidated feedstock sheet and the second piece of pre-consolidated feedstock sheet by heating and compressing the composite layup to form a glass-ceramic matrix composite part.2. The method of claim 1 , wherein assembling the first piece of pre-consolidated feedstock sheet and the second piece of pre-consolidated feedstock sheet comprises assembling the first piece of pre-consolidated feedstock sheet and the second piece of pre-consolidated feedstock sheet with at least one of a tape and a mandrel.3. The method of claim 1 , wherein the pre-determined shape of the pre-consolidated feedstock sheet includes embedded channels.4. The method of claim 1 , wherein forming the glass-ceramic matrix composite material comprises at least one ...

VITREOUS SILICA CRUCIBLE AND METHOD OF MANUFACTURING THE SAME

A method of manufacturing a vitreous silica crucible includes: a taking-out process of taking out the vitreous silica crucible from the mold, a honing process of removing the unfused silica powder layer on the outer surface of the vitreous silica crucible, and further comprising, after the taking-out process and before the honing process, a marking process of marking an identifier comprised of one or more groove line on the outer surface of the vitreous silica crucible, wherein the groove line after the honing process has a cross-sectional shape of an inverse trapezoid and a depth of 0.2 to 0.5 mm, and a width of 0.8 mm or more at the opening of the groove line. The groove line is formed by repeating shifting a focal point of a laser. 1. A method of marking a vitreous silica crucible after taking-out the vitreous silica crucible from a mold and before removing unfused silica power layer on an outer surface of the vitreous silica crucible , said method comprising: marking by a laser beam an identifier comprised of multiple groove lines constituting alphabetic characters , numeric characters , or a bar code on the outer surface of the vitreous silica crucible to identify various kinds of crucibles , whereineach groove line after the honing process has a depth of 0.2 to 0.5 mm, and a width of 0.8 mm or more at the opening of the groove line, and each groove line has a cross-sectional shape of an inverse trapezoid; (i) setting, on the outer surface of the vitreous silica crucible under the unfused silica powder layer, a focal point of the laser released from a laser marker;', '(ii) in that state, reciprocally moving the focal point along a longitudinal direction of the groove line at a width-direction position to form a part of the groove line;', '(iii) shifting the focal point in a width direction to a next width-direction position and repeating step (ii); and', '(iv) repeating step (iii) to form each of the multiple groove lines with the inverse trapezoid cross ...

METHOD OF COATING QUARTZ CRUCIBLE FOR GROWING SILICON CRYSTAL, AND QUARTZ CRUCIBLE FOR GROWING SILICON CRYSTAL

A coating method for coating a crucible and a quartz crucible for growing a silicon crystal are provided. In the coating method, a bubble-free quartz layer which is 80 μm to 4 mm thick is formed on an inner surface of a crucible for growing a silicon crystal, and the surface of the bubble-free quartz layer is covered with alkaline earth hydroxide, following which heating is performed to a temperature at which the surface becomes devitrified. The surface may be covered by immersing the inner surface in a solution of the alkaline earth hydroxide. The heating may be performed before the crucible for growing silicon crystal is filled with a solid raw material to be melted. 1. A method of coating , comprising the steps of:forming a bubble-free quartz layer having a thickness of 80 μm to 4 mm inclusive on an inner surface of a quartz crucible for growing a silicon crystal;covering the surface of the bubble-free quartz layer with alkaline earth hydroxide; andheating the surface to at least a temperature at which the surface becomes devitrified.2. The method of coating according to claim 1 , wherein covering the surface of the bubble-free quartz layer with alkaline earth hydroxide is performed by immersing the inner surface in a solution including the alkaline earth hydroxide.3. The method of coating according to claim 1 , whereinthe heating is performed before filling the crucible for growing a silicon crystal with a solid raw material to be melted.4. A quartz crucible for growing a silicon crystal claim 1 , comprising: 'a devitrified coating formed by covering a surface of the bubble-free quartz layer with alkaline earth hydroxide and then heating the surface to at least a temperature at which the surface becomes devitrified.', 'a bubble-free quartz layer having a thickness of 80 μm to 4 mm, and'}5. The method of coating according to claim 2 , whereinthe heating is performed before filling the crucible for growing a silicon crystal with a solid raw material to be melted. ...

QUARTZ GLASS CRUCIBLE, MANUFACTURING METHOD OF SILICON SINGLE CRYSTAL USING THE SAME, AND INFRARED TRANSMISSIVITY MEASUREMENT METHOD AND MANUFACTURING METHOD OF QUARTZ GLASS CRUCIBLE

A quartz glass crucible having a cylindrical side wall portion , a bottom portion , and a corner portion includes a transparent layer as an innermost layer made of quartz glass, a semi-molten layer as an outermost layer made of raw material silica powder solidified in a semi-molten state, and a bubble layer made of quartz glass interposed therebetween. An infrared transmissivity of the corner portion in a state where the semi-molten layer is removed is 25 to 51%, the infrared transmissivity of the corner portion in the state where the semi-molten layer is removed is lower than an infrared transmissivity of the side wall portion , and the infrared transmissivity of the side wall portion in the state where the semi-molten layer is removed is lower than an infrared transmissivity of the bottom portion 1. A quartz glass crucible comprising:a cylindrical side wall portion;a bottom portion;a corner portion connecting the side wall portion and the bottom portion to each other;a transparent layer made of quartz glass that does not contain bubbles;a bubble layer formed outside the transparent layer and made of quartz glass containing a large number of bubbles; anda semi-molten layer formed outside the bubble layer and made of raw material silica powder solidified in a semi-molten state,wherein an infrared transmissivity of the corner portion in a state where the semi-molten layer is removed is 25 to 51%,the infrared transmissivity of the corner portion in the state where the semi-molten layer is removed is lower than an infrared transmissivity of the side wall portion in a state where the semi-molten layer is removed, andthe infrared transmissivity of the corner portion in the state where the semi-molten layer is removed is lower than an infrared transmissivity of the bottom portion in a state where the semi-molten layer is removed.2. The quartz glass crucible according to claim 1 ,wherein the infrared transmissivity of the side wall portion in the state where the semi- ...

ACTIVE BALANCING SEED LIFT

A crystal growing system includes a rotating seed lift assembly to rotate and lift a seed crystal supported by a cable. The seed lift assembly includes a spool that rotates to wrap the cable around the spool, thus raising the cable. As the spool rotates, it moves in an axial direction to avoid displacing the cable in the axial direction. A leadscrew in a counterweight assembly is mechanically coupled to the spool via a coupling (e.g., a sprocket-and-chain coupling coupled to the spool spindle). As the spool rotates, the leadscrew thus rotates at a rate proportional to the spool's rate of rotation. A movable counterweight driven by the leadscrew is thus driven to move in a direction opposite the axial direction (e.g., opposite the movement of the spool). The counterweight assembly is thus configured to offset center-of-mass changes that would have otherwise been introduced by movement of the spool. 1. A seed lifting assembly comprising:a platform base having a cable port for outputting a cable supporting a seed crystal;a spool having a helical collection groove extending along a length of the spool, the spool rotatable about an axis of rotation to wind the cable into the collection groove as the spool moves longitudinally along a spool axis; and{'claim-text': ['a counterweight leadscrew rotatably coupled to the spool such that rotation of the spool induces rotation of the counterweight leadscrew; and', 'a movable counterweight coupled to the counterweight leadscrew, wherein rotation of the counterweight leadscrew induces sliding of the movable counterweight along a counterweight axis that is parallel to the spool axis; and'], '#text': 'a counterweight assembly coupled to the platform base, the counterweight assembly including:'}wherein, in response to longitudinal movement of the spool in a first direction, the counterweight assembly is configured to slide the movable counterweight in a direction opposite the first direction by an amount sufficient to offset any ...

CRYSTAL PULLER FOR INHIBITING MELT CONTAMINATION

A crystal puller for growing a crystal ingot includes a housing, insulation, a crucible assembly, a heat shield, and a dust barrier. The housing encloses a growth chamber, and has an upper wall with an inner surface and an aperture. The insulation separates an inside of the housing into an upper area and a lower area, and has a central opening. The crucible assembly is within the lower area to contain the melt. The heat shield is adjacent the central opening of the insulation, and forms a labyrinth gas path with the crucible assembly. The dust barrier extends from the inner surface of the upper wall to one of the insulation and the heat shield, and forms a seal with the upper wall around the aperture to inhibit particles from entering the growth chamber through the upper area of the housing. 1. A crystal puller for growing a crystal ingot from a melt , the crystal puller comprising:a housing enclosing a growth chamber, the housing having an upper wall with an inner surface and an aperture for removal of the crystal ingot from the growth chamber;insulation separating an inside of the housing into an upper area and a lower area, the insulation having a central opening;a crucible assembly within the lower area to contain the melt therein;a heat shield adjacent the central opening of the insulation, the heat shield forming a labyrinth gas path with the crucible assembly; anda dust barrier extending from the inner surface of the upper wall to one of the insulation and the heat shield, the dust barrier forming a seal with the upper wall around the aperture to inhibit particles from entering the growth chamber through the upper area of the housing.2. The crystal puller of claim 1 , wherein the dust barrier is sealingly connected to the upper wall radially outward of the aperture to allow unobstructed access to the growth chamber through the upper wall.3. The crystal puller of claim 1 , wherein the dust barrier has a top portion in compression against the upper wall.4. The ...

ADVANCED CRUCIBLE SUPPORT AND THERMAL DISTRIBUTION MANAGEMENT

According to the disclosed embodiments, an advanced crucible support system is described that allows for greater heat flow to and from the bottom of a crucible, while also preventing excessive heat from reaching a heat exchanger. In particular, a “crown” support base is described that provides heat flow throughout the system, yet with various features to limit the amount of heat reaching the heat exchanger. Also, according to one or more additional embodiments, the functionality of the crucible support is adapted to be leveraged by a crucible manipulating device. For example, the support plate may have features designed within it for enabling lifting devices to interface with it, such as a plurality of slots for insertion of a “lifting arm”, such that the entire support plate assembly, as well as the crucible itself while on the support assembly, may be lifted and transported as a single unit. 1. An apparatus , comprising:a support base plate; anda plurality of spaced crown features disposed on the support base plate, the crown features configured to receive and vertically support a crucible, the plurality of crown features spaced to support the crucible and to allow heat flow between the plurality of crown features.2. The apparatus as in claim 1 , further comprising:an aperture in the support based plate configured to allow passage of a heat exchanger.3. The apparatus as in claim 2 , further comprising:a recessed cavity formed by the support base plate, the recessed cavity contained within an interior space defined by the spaced crown features and surrounding the heat exchanger aperture; andan insulation placed within the recessed cavity and configured to surround the heat exchanger.4. The apparatus as in claim 3 , further comprising:a low emissivity sheet covering the insulation on a side of the insulation facing a supported crucible.5. The apparatus as in claim 1 , further comprising:a replaceable shim on each of the plurality of crown features.6. The apparatus ...

INSPECTION METHOD OF VITREOUS SILICA CRUCIBLE

A method of manufacturing a vitreous silica crucible includes an inspection method comprising: a measurement step of measuring an infrared absorption spectrum or a Raman shift of a measurement point on an inner surface of the vitreous silica crucible; a determining step of predicting whether a surface defect region is generated or not in the measurement point based on an obtained spectrum to determine a quality of the vitreous silica crucible. 1. A method of manufacturing a vitreous silica crucible , comprising:(i) depositing a silica powder layer on an inner surface of a mold;(ii) performing arc melting of the silica powder layer to form a vitreous silica crucible; a measurement step of measuring an infrared absorption spectrum or a Raman shift of a measurement point on an inner surface of the vitreous silica crucible; and', 'a determining step of predicting whether a surface defect region is generated or not in the measurement point based on an obtained spectrum to determine a quality of the vitreous silica crucible;, '(iii) conducting inspection of the vitreous silica crucible, comprising(iv) repeating steps (i) to (iii) to produce multiple vitreous silica crucibles; and(v) selecting each vitreous silica crucible having a desired quality determined in step (iii).2. The method according to claim 1 , wherein in the determining step in step (iii) claim 1 , whether the surface defect region is generated or not claim 1 , is predicted based on whether a peak is present or not in a predetermined position in the obtained spectrum obtained in the measurement step.3. The method according to claim 2 , wherein the predetermined position in the infrared absorption spectrum corresponds to wavenumber 1080-1100 cmand/or wavenumber 1150-1250 cm.4. The method according to claim 2 , wherein the predetermined position in the Raman shift corresponds to Raman shift 500-550 cm.5. The method according to claim 1 , wherein in the determining step in step (iii) claim 1 , whether the ...

SINGLE-CRYSTAL SILICON PULLING SILICA CONTAINER AND PRODUCING METHOD THEREOF

A single-crystal silicon pulling silica container including: a transparent silica glass layer in the inner side of the silica container; and an opaque silica glass layer containing gaseous bubbles in the outer side of the silica container, wherein the transparent layer constitutes of a high-OH group layer placed on an inner surface side of the silica container containing the OH group at a concentration of 200 to 2000 ppm by mass and a low-OH group layer having the OH group concentration lower than the high-OH group layer containing Ba at a concentration of 50 to 2000 ppm by mass. Resulting in the silica container used for pulling single-crystal silicon, providing the silica container improves etching corrosion resistance of the container inner surface to silicon melt when the entire inner surface of transparent silica glass of the container is crystallized short after using the container and method for such silica container. 16-. (canceled)7. A single-crystal silicon pulling silica container comprising: a transparent layer made of transparent silica glass in an inner side of the silica container , and an opaque layer made of opaque silica glass containing gaseous bubbles in an outer side of the silica container ,wherein the transparent layer is constituted of a high-OH group layer that is placed in an inner surface side of the silica container and contains the OH group at a concentration of 200 to 2000 ppm by mass and a low-OH group layer that has the OH group concentration lower than that of the high-OH group layer, andthe high-OH group layer contains Ba at a concentration of 50 to 2000 ppm by mass.8. The single-crystal silicon pulling silica container according to claim 7 ,wherein a thickness of the high-OH group layer is 0.5 mm or more and 3 mm or less.9. The single-crystal silicon pulling silica container according to claim 7 ,wherein the high-OH group layer contains Ba at a concentration of 100 to 1000 ppm by mass and contains the OH group at a concentration of ...

PROTECTIVE COATING TO PREVENT REACTION BETWEEN GRAPHITE SUSCEPTOR AND QUARTZ CRUCIBLE

A susceptor for supporting a crucible includes a body with an interior surface defining a cavity. A coating is disposed on the interior surface to provide a barrier for preventing contact between the body of the susceptor and the crucible disposed within the cavity. 1. A susceptor for supporting a crucible , the susceptor comprising:a body having an interior surface defining a cavity, the cavity having a size and shape complementary to an outer size and shape of the crucible; anda coating on the interior surface, the coating providing a barrier for preventing contact between the body of the susceptor and the crucible disposed within the cavity.2. The susceptor of claim 1 , wherein the coating includes an inert material.3. The susceptor of claim 2 , wherein the inert material is selected from the group of boron nitride claim 2 , silicon nitride claim 2 , zirconium silicate claim 2 , tantalum carbide claim 2 , molybdenum disilicide claim 2 , and molybdenum disilicide alloys.4. The susceptor of claim 2 , wherein the inert material is unreactive with quartz and graphite.5. The susceptor of claim 1 , wherein the susceptor is made of graphite.6. The susceptor of in combination with the crucible.7. A coating for providing a protective barrier between a graphite body of a susceptor and a quartz body of a crucible disposed within a cavity of the susceptor during a crystal pulling process claim 1 , the coating comprising:an inert material to inhibit a reaction between carbon of the susceptor and silica of the crucible, the inert material being inert with respect to both the carbon and the silica at the process conditions during the crystal pulling process.8. The coating of claim 7 , wherein the inert material is selected from the group of boron nitride claim 7 , tantalum carbide claim 7 , silicon nitride claim 7 , zirconium silicate claim 7 , and molybdenum disilicide.9. The coating of claim 7 , wherein the inert material is a molybdenum disilicide alloy.10. The coating of ...

VITREOUS SILICA CRUCIBLE FOR PULLING OF SILICON SINGLE CRYSTAL AND METHOD FOR MANUFACTURING THE SAME

The present invention provides a vitreous silica crucible which inhibits a deformation even when used under a high temperature condition for a long time, and a method for manufacturing the same. The vitreous silica crucible comprises: a substantially cylindrical straight body portion having an opening on the top end and extending in a vertical direction, a curved bottom portion, and a corner portion connecting the straight body portion with the bottom portion and a curvature of which is greater than that of the bottom portion, wherein, the vitreous silica crucible comprises a transparent layer on the inside and a bubble layer on the outside thereof, a compressive stress layer in which compressive stress remains in the inner surface side of the transparent layer, and a tensile stress layer in which tensile stress remains and is adjacent to the compressive stress layer at a gradual rate of change of stress. 1. A vitreous silica crucible for pulling of silicon single crystal , comprising: a substantially cylindrical straight body portion having an opening on the top end and extending in a vertical direction , a curved bottom portion , and a corner portion connecting the straight body portion with the bottom portion and a curvature of which is larger than that of the bottom portion , wherein ,the vitreous silica crucible comprises a transparent layer on the inside and a bubble layer on the outside thereof,a compressive stress layer in which compressive stress remains in the inner surface side of the transparent layer, anda tensile stress layer in which tensile stress remains and is adjacent to the compressive stress layer at a gradual rate of change of stress.2. The vitreous silica crucible for pulling of silicon single crystal according to claim 1 , the rate of change of stress is 0.17 MPa/mm or more and 1.5 MPa/mm or less.3. A method for manufacturing a silica glass crucible for pulling of silicon single crystal claim 1 , wherein the vitreous silica crucible for ...

SILICA CONTAINER FOR PULLING SINGLE CRYSTAL SILICON AND METHOD FOR MANUFACTURING THE SAME

The present invention provides a silica container for pulling single crystal, the container having a straight body portion, a curved portion, and a bottom portion, wherein an outer side of the container is made of opaque silica glass containing bubbles, and an inner side of the container is made of transparent silica glass, and a mixed silica layer in which a phase in which a crystalline silica powder is fused and a phase in which an amorphous silica powder is fused are mixed in a granular texture is provided on at least an inner surface layer portion of the straight body portion. As a result, there is provided the silica container for pulling single crystal silicon which can suppress melt surface vibration of a silicon melt in the silica container at a high temperature. 115-. (canceled)16. A method for manufacturing a silica container for pulling single crystal silicon , the silica container having a straight body portion , a curved portion , and a bottom portion , the method comprising:a step of preparing a crystalline silica powder having a particle size of 10 to 1000 μm as a first raw material powder;a step of preparing a mixed powder of a crystalline silica powder having a particle size of 50 to 2000 μm and an amorphous silica powder having a particle size of 50 to 2000 μm as a second raw material powder;a step of putting the first raw material powder to an inner side of a mold having rotation symmetry, and temporarily molding the first raw material powder into a predetermined shape corresponding to an inner wall of the mold while rotating the mold to form a first temporary compact made of the first raw material powder in the mold;a step of putting the second raw material powder to at least one of an inner side and an upper portion of the first temporary compact formed in the mold to form a second temporary compact having a portion made of the first raw material powder and a portion made of the second raw material powder into a shape corresponding to a shape of ...

Method of manufacturing composite crucible

A method of manufacturing a composite crucible includes: supplying mullite material powder to an upper region of a mold, and supplying second silica powder to a lower region provided below the upper region while rotating the mold; supplying third silica powder on an inner surface side of a layer made of the mullite material powder and the second silica powder; heating and fusing the mullite material powder, the second silica powder, and the third silica powder to form an opaque vitreous silica layer provided on the outer surface of the crucible, a transparent vitreous silica layer provided on an inner surface side of the crucible, and a mullite reinforcement layer provided on the outer surface side of an upper end portion of the crucible.

QUARTZ GLASS CRUCIBLE

[Problems to be solved] Provided is a quartz glass crucible having high durability even at a high temperature during a single crystal pull-up step and capable of reducing a generation ratio of pinholes in a silicon single crystal. 1. A quartz glass crucible comprising:a quartz glass crucible body having a cylindrical side wall portion, a curved bottom portion, and a corner portion which has a larger curvature than that of the bottom portion and connects the side wall portion and the bottom portion to each other; andan inner-surface coating film which contains a crystallization accelerator and is formed on an inner surface of the quartz glass crucible body,wherein the inner surface of the quartz glass crucible body is under compressive stress.2. The quartz glass crucible according to claim 1 ,{'sub': '2', 'wherein the inner-surface coating film contains a compound that contains the crystallization accelerator and forms a glass having a two or more component system with SiO.'}3. The quartz glass crucible according to or claim 1 ,wherein an uncoated region of the crystallization accelerator is provided on a rim upper-end surface of the quartz glass crucible body and within a range of 2 to 40 mm extending downward from a rim upper end on the inner surface of the quartz glass crucible body.4. The quartz glass crucible according to any one of to claim 1 ,wherein an average grain size of crystal grains contained in an inner crystal layer formed in a vicinity of the inner surface of the quartz glass crucible body due to an action of the inner-surface coating film heated during a step of pulling a silicon single crystal is 0.1 to 100 μm,a peak of a frequency distribution of the crystal grains is in a range of 0.1 to 100 μm, anda sum of first and second highest ranks in area ratios of respective plane orientations of the inner crystal layer as viewed from an inner surface side of the quartz glass crucible body is 50% or more.5. The quartz glass crucible according to any one ...

QUARTZ GLASS CRUCIBLE AND MANUFACTURING METHOD THEREOF

Provided are a quartz glass crucible capable of withstanding a single crystal pull-up step undertaken for a very long period of time, such as multi-pulling, and a manufacturing method thereof. 1. A quartz glass crucible used for pulling up a silicon single crystal by a Czochralski method , comprising:a cylindrical crucible body which has a bottom and is made of quartz glass; anda crystallization-accelerator-containing coating film which is formed on a surface of the crucible body so as to cause a crystallization-accelerator-enriched layer to be formed in the vicinity of the surface of the crucible body by heating during a step of pulling up the silicon single crystal.2. The quartz glass crucible according to claim 1 ,wherein a thickness of the crystallization-accelerator-enriched layer is 0.1 μm or more and 50 μm or less.3. The quartz glass crucible according to claim 1 , a straight body portion having a cylindrical shape,', 'a bottom portion which is curved, and', 'a corner portion which connects the straight body portion to the bottom portion, and, 'wherein the crucible body includes'}the crystallization-accelerator-containing coating film is formed at least on the straight body portion.4. The quartz glass crucible according to claim 1 ,{'sub': '2', 'wherein a crystallization accelerator contained in the crystallization-accelerator-containing coating film contains a compound forming glass of a system of two or more components with SiO.'}5. A quartz glass crucible used for pulling up a silicon single crystal by a Czochralski method claim 1 , comprising:a cylindrical crucible body which has a bottom and is made of quartz glass; and{'sub': i', 'o', 'i', 'o, 'first and second crystallization-accelerator-containing coating films which are respectively formed on an inner surface of the crucible body and an outer surface of the crucible body so as to cause a ratio t/t, of a thickness tof an inner crystal layer formed on the inner surface of the crucible body to a ...

Hollow Silica Glass Microneedle Arrays and Method and Apparatus for Manufacturing Same

A novel array of hollow silica glass microneedles is provided. The array is prepared from a silica dispersion. A novel apparatus is provided comprising a negative mold component having tapered openings therein and a positive mold component having positive elements that are received within the tapered openings of the negative mold component. An assembly is prepared of the negative mold component and the positive mold component, with an aqueous silica dispersion received within the space between the outer surface of the positive elements and the inner surface of the openings. The assembly is heated to remove air and water vapors from the silica dispersion, then the assembly is further heated to sinter the remaining silica to silica glass. The sintered silica glass when removed from the mold components is in the form of an array of microneedles. 1. A silica glass microneedle having a channel therein for drug delivery.2. The silica glass microneedle of claim 1 , wherein the channel is in the form of a hollow passage disposed within the body of the microneedle.3. A patch for transdermal drug delivery claim 1 , the patch comprising an array of silica glass microneedles according to having a hollow passage disposed within the body of the microneedle.4. The silica glass microneedle of claim 1 , wherein said microneedle has a height of about 100-900 microns claim 1 , a base diameter of about 100-500 microns claim 1 , and a taper angle of about 10-20 degrees to said base.5. The patch of claim 3 , wherein the microneedles have a center-to-center spacing of about 200-500 microns.6. A method of forming a hollow silica glass microneedle claim 3 , comprising the steps of:providing a negative mold component having upper and lower surfaces and having at least one tapered opening formed therein with the narrow end of the taper exiting at said lower surface of said mold component;introducing a silica dispersion into said tapered opening;providing a complementary positive mold ...

Method for homogenizing glass

A method for homogenizing glass includes the method: providing a cylindrical blank composed of the glass having a cylindrical outer surface that extends along a longitudinal axis of the blank between a first end face and a second end face, forming a shear zone in the blank by softening a longitudinal section of the blank and subjecting it to a thermal-mechanical intermixing treatment, and displacing the shear zone along the longitudinal axis of the blank. To enable a radial mixing within the shear zone in addition to the tangential mixing with the lowest possible time and energy input, starting from this method, cylindrical sections of the blank are adjacent to the shear zone on both sides, the first cylindrical section having a first central axis and the second cylindrical section having a second central axis, the first central axis and the second central axis being temporarily non-coaxial with each other.

METHODS, SYSTEMS, AND APPARATUSES FOR A REACTOR

Methods, systems, and apparatuses for generating, producing, and utilizing energy. 1. An apparatus substantially as described herein.2. A system substantially as described herein.3. A method substantially as described herein. Aspects of the invention are disclosed in the following description and related drawings directed to specific embodiments of the invention. Those skilled in the art will recognize that alternate embodiments may be devised without departing from the spirit or the scope of the claims. Additionally, well-known elements of exemplary embodiments of the invention will not be described in detail or will be omitted so as not to obscure the relevant details of the invention. Further, to facilitate an understanding of the description discussion of several terms used herein follows.As used herein, the word “exemplary” means “serving as an example, instance or illustration.” The embodiments described herein are not limiting, but rather are exemplary only. It should be understood that the described embodiment are not necessarily to be construed as preferred or advantageous over other embodiments. Moreover, the terms “embodiments of the invention”, “embodiments” or “invention” do not require that all embodiments of the invention include the discussed feature, advantage or mode of operation.In an exemplary embodiment, a Reactor may be provided.Starting with raw materials, the chemical compound aluminum oxide, AlO, is put into a crucible and synthetically grown and doped with titanium creating Ti:AlO. This new compound is known as Titanium-Sapphire. Ti-Sapphire is a unique crystal that when stimulated by a specific wavelength of light, has been known as a tunable gain medium. Currently, Ti-Sapphire is frequently used in many different laser systems due to its unique index of refraction and varying orientations. It was not until very recently that it was discovered that there was a way to both harness and sustain the gain of the Ti-Sapphire. With this ...

QUARTZ GLASS CRUCIBLE FOR PULLING SINGLE CRYSTAL SILICON AND METHOD FOR PRODUCING THE SAME

The present invention is a method for producing a quartz glass crucible for pulling a single crystal silicon from a silicon melt held therein, including the steps of: producing a quartz glass crucible having an outer layer including an opaque quartz glass containing bubbles therein and an inner layer including a transparent quartz glass containing substantially no bubbles; roughening a region of an inner surface of the produced quartz glass crucible, the region being in contact with the silicon melt when holding the silicon melt; and heating the quartz glass crucible having the roughened inner surface to crystallize a surface of the roughened region. This can produce a quartz glass crucible for pulling a single crystal silicon which can suppress generation of a brown ring on the inner surface of the crucible during pulling the single crystal silicon and can suppress crystallinity disorder of the single crystal silicon. 111-. (canceled)12. A method for producing a quartz glass crucible for pulling a single crystal silicon from a silicon melt held therein , comprising the steps of:producing a quartz glass crucible having an outer layer comprising an opaque quartz glass containing bubbles therein and an inner layer comprising a transparent quartz glass containing substantially no bubbles;roughening a region of an inner surface of the produced quartz glass crucible, the region being in contact with the silicon melt when holding the silicon melt; andheating the quartz glass crucible having the roughened inner surface to crystallize a surface of the roughened region.13. The method for producing a quartz glass crucible for pulling a single crystal silicon according to claim 12 , wherein the roughening forms the roughened region having an arithmetic mean roughness of 0.1 μm or more and 3.0 μm or less.14. The method for producing a quartz glass crucible for pulling a single crystal silicon according to claim 12 , wherein the whole of the inner surface of the quartz glass ...

COLD CRUCIBLE STRUCTURE

A cold crucible structure according to an embodiment of the present invention includes a cold crucible structure according to an embodiment of the present invention includes: a cold crucible unit including hollow top and bottom caps, a plurality of segments connecting the top cap and the bottom cap, slits disposed between the segments, and a reaction area surrounded by the segments; and an induction coil unit disposed to cover the outer side of the cold crucible unit and disposed across the longitudinal directions of the segments and the slits, in which the diameter of the reaction area is defined as a crucible diameter, the crucible diameter is 100 to 300 mm, and gaps of the slits are defined by 4. The cold crucible structure of claim 1 , wherein the induction coil unit is disposed at the central area in the longitudinal direction of the segments.5. The cold crucible structure of claim 1 , wherein the cold crucible includes cooling channels disposed in the segments claim 1 , andthe diameter of the cooling channels is set in the range of 8 to 15 mm.6. The cold crucible structure of claim 5 , further comprising:a support connected to the bottom cap; andcooling tubes for supplying cooling water for cooling the segments through the support,wherein the cooling tubes are connected to the cooling channels.7. The cold crucible structure of claim 5 , wherein the cooling channels each have an inlet channel for supplying cooling water and an outlet channel for discharging cooling water.8. The cold crucible structure of claim 1 , wherein the shortest spacing distance between ends of the slits and the induction coils and the shortest spacing distance between the other ends of the slits and the induction coil unit are the same. The present invention relates to a cold crucible structure, and more particularly, to a cold crucible structure that has mechanical, structural, and thermal stability and increases melting efficiency.High-melting point active metal such as titanium is ...

METHOD FOR MANUFACTURING VITREOUS SILICA CRUCIBLE

Accurate temperature measurement during manufacturing a vitreous silica crucible is enabled. The present invention provides an apparatus for manufacturing a vitreous silica crucible including: a mold for forming a silica powder layer by supplying silica powder therein; an are discharge unit having carbon electrodes and a power supply unit and for heating and fusing the silica powder layer by arc discharge; and a temperature measurement unit for measuring temperature of a fused portion in the mold, wherein the temperature measurement unit is an radiation thermometer for measuring temperature by detecting radiation energy of a wavelength of 4.8 to 5.2 μm. 1. A method of manufacturing a vitreous silica crucible comprising:a silica powder supplying process of supplying silica powder into a mold for molding a crucible, to form a silica powder layer; andan are fusing process of arc fusing the silica powder layer by arc discharge generated by carbon electrodes, whereinat least the arc fusing process include a temperature measuring process of measuring temperature of a fused portion in the mold by detecting radiation energy of a wavelength of 4.8 to 5.2 μm by a temperature measurement unit which is a radiation thermometer.2. The method of claim 1 , wherein claim 1 , in the temperature measurement process claim 1 , the temperature measurement unit measures the temperature through a filter made of BaFor CaF.3. The method of claim 1 , wherein claim 1 , in the temperature measurement process claim 1 , the range of the measuring temperature of the temperature measurement unit is set to be 400 to 2800 deg. C.4. The method of claim 1 , wherein claim 1 , in the temperature measuring process claim 1 , the temperature measurement unit detects the radiation energy at a corner portion of the vitreous silica crucible claim 1 , and the corner portion is a portion extending from a point where a curvature at a bottom portion of the vitreous silica crucible starts to change claim 1 , to a ...

SINGLE-CRYSTAL SILICON PULLING SILICA CONTAINER AND METHOD FOR PRODUCING THE SAME

The present invention is directed to a single-crystal silicon pulling silica container, the silica container including a straight body portion, a curved portion, and a bottom portion, wherein the OH group concentration in the straight body portion is 30 to 300 ppm by mass, the OH group concentration in the bottom portion is 30 ppm by mass or less, and the difference in the OH group concentration between the straight body portion and the bottom portion is 30 ppm by mass or more. As a result, a low-cost single-crystal silicon pulling silica container, the silica container that can reduce cavity defects called voids and pinholes in pulled single crystal silicon, is provided. 18-. (canceled)9. A single-crystal silicon pulling silica container comprising a straight body portion , a curved portion , and a bottom portion , whereinthe OH group concentration in the straight body portion is 30 to 300 ppm by mass,the OH group concentration in the bottom portion is 30 ppm by mass or less, anda difference in the OH group concentration between the straight body portion and the bottom portion is 30 ppm by mass or more.10. The single-crystal silicon pulling silica container according to claim 9 , whereinan outside of the straight body portion is made of opaque silica glass containing gaseous bubbles, an inside of the straight body portion is made of transparent silica glass containing substantially no gaseous bubble, and the bottom portion is made of translucent silica glass containing fewer gaseous bubbles than the opaque silica glass or transparent silica glass containing substantially no gaseous bubble.11. The single-crystal silicon pulling silica container according to claim 9 , wherein{'sub': '2', 'sup': 17', '3, 'an amount of released HO in the bottom portion is 1×10molecules/cmor less.'}12. The single-crystal silicon pulling silica container according to claim 10 , wherein{'sub': '2', 'sup': 17', '3, 'an amount of released HO in the bottom portion is 1×10molecules/cmor less ...

EVALUATION METHOD OF SUITABLE SILICA POWDER IN MANUFACTURING VITREOUS SILICA CRUCIBLE FOR PULLING OF SILICON SINGLE CRYSTAL

An evaluation method of suitable silica powder for forming a bubble-free layer of a vitreous silica crucible for pulling of a silicon single crystal, includes: a process of measuring a porosity between silica particles in the silica powder, a process of melting the silica powder, a process of measuring a bubble content rate of a vitreous silica block obtained by cooling to harden the melted silica powder, and a process of determining whether the silica powder is suitable from the porosity of the silica powder and the bubble content rate of the vitreous silica block. 1. An evaluation method of suitable silica powder for forming a bubble-free layer of a vitreous silica crucible for pulling of a silicon single crystal , comprising:a process of measuring a porosity between silica particles in the silica powder;a process of melting the silica powder;a process of measuring a bubble content rate of a vitreous silica block obtained by cooling to harden the melted silica powder; anda process of determining whether the silica powder is suitable from the porosity of the silica powder and the bubble content rate of the vitreous silica block.2. The evaluation method according to claim 1 , wherein measurements of the porosity and the bubble content rate are performed using a confocal microscope.3. The evaluation method according to claim 1 , wherein a melting temperature of the silica powder is about 1500-2600° C.4. The evaluation method according to claim 1 , wherein for the suitable silica powder claim 1 , (the bubble content of the vitreous silica block)/(the porosity of the silica particles) is 0.5 or more.5. A method of manufacturing a vitreous silica crucible claim 1 , comprising the steps of:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'selecting a suitable silica powder for forming a bubble-free layer of the vitreous silica crucible using the evaluation method according to ; and'}manufacturing the vitreous silica crucible by arc melting method using the suitable ...

SILICA CONTAINER AND METHOD FOR PRODUCING THE SAME

A method for producing a silica container having a rotational symmetry includes forming a preliminarily molded article by feeding a powdered substrate's raw material to an inner wall of an outer frame having aspiration holes with rotating the frame, and forming a silica substrate. The preliminarily molded article is aspirated from an outer peripheral side with controlling a humidity inside the outer frame by ventilating gases present in the outer frame with charging from inside the preliminarily molded article a gas mixture comprised of an O2 gas and an inert gas and made below a prescribed dew-point temperature by dehumidification, and at the same time heated from inside the preliminarily molded article by a discharge-heat melting method with carbon electrodes, thereby making an outer peripheral part of the preliminarily molded article to a sintered body while an inner peripheral part to a fused glass body. 1. A method for producing a silica container comprised of at least a silica as its main component and arranged with a silica substrate having a rotational symmetry , wherein the method comprises:a step of preparing a powdered substrate's raw material comprised of silica particles for forming the silica substrate,a step of forming a preliminarily molded silica substrate, wherein the powdered substrate's raw material is fed to an inner wall of an outer frame having a rotational symmetry and aspiration holes arranged splittingly in the inner wall while rotating the outer frame thereby preliminarily molding the powdered substrate's raw material to an intended shape in accordance with the inner wall of the outer frame, and{'sub': '2', 'a step of forming the silica substrate, wherein the preliminarily molded silica substrate is degassed by aspiration from an outer peripheral side through the aspiration holes formed in the outer frame with controlling a humidity inside the outer frame by ventilating gases present in the outer frame with charging from inside the ...

SILICA-GLASS CRUCIBLE AND PRODUCTION METHOD THEREOF

The present invention relates to a silica-glass crucible for pulling up single-crystal silicon therefrom by Czochralski method (CZ method) or for melting an optical-glass, which includes a crystallization promoter, and method of producing the silica-glass crucible in which a raw-material silica powder including Al and Ca at a specific molar concentration ratio is molded. 1. A silica-glass crucible comprising Al and Ca.2. The silica-glass crucible according to claim 1 , having an aluminum concentration of 55-100 wt ppm and a calcium concentration of 1.2-9.5 wt ppm claim 1 , which are determined by a chemical purity analysis claim 1 , andhaving a molar concentration ratio (Al/Ca) calculated from the aluminum concentration and the calcium concentration of 15 or higher.3. A method of producing the silica-glass crucible according to claim 2 , the method comprising:a step 1 of charging a raw-material silica powder having a molar concentration ratio (Al/Ca) calculated from an aluminum concentration and a calcium concentration which are determined by a chemical purity analysis of 15 or higher, into a rotating mold to conduct forming; anda step 2 of inserting an arc electrode into the mold and vitrifying a layer of the raw-material silica powder accumulated on an inner surface of the mold by an arc-melting.4. The method of producing the silica-glass crucible claim 3 , according to claim 3 , wherein the raw-material silica powder in the step 1 has the aluminum concentration of 55-100 wt ppm and the calcium concentration of 1.2-9.5 wt ppm.5. The silica-glass crucible according to claim 1 , comprising:a bottom part;a bottom corner formed around the bottom part; anda lateral part extending upward from the bottom corner, wherein:the silica-glass crucible has a crucible upper-end region;the crucible upper-end region is a region extending from an upper end of the crucible downward to a distance therefrom of 5 mm or longer but not longer than a distance of a sum of an upper-end wall ...

CRYOGENIC TEMPERATURE MEASURING RESISTOR ELEMENT

Provided is a cryogenic temperature measuring resistor element including a metallic temperature measuring resistor wire, an electric insulator made of a polycrystalline ceramic material, and a filler filled between the electric insulator and the temperature measuring resistor wire. The filler includes polycrystalline inorganic electric insulating powder, particles of the insulating powder being connected by glass. The glass has a lower softening point than respective melting points of the inorganic electric insulating powder, the temperature measuring resistor wire, and the electric insulator. 1. A cryogenic temperature measuring resistor element , comprising a temperature measuring resistor wire , a housing for accommodating the temperature measuring resistor wire in an interior thereof , and a filler filled between the housing and the temperature measuring resistor wire ,wherein the filler includes a mixture of polycrystalline inorganic electric insulating powder and glass powder of an amorphous electric insulating material having a lower softening point than respective melting temperatures of the inorganic electric insulating powder, the temperature measuring resistor wire, and the housing, andthe mixture having been filled between the housing and the temperature measuring resistor wire, and been heated at a temperature higher than the softening point of the glass powder and lower than the respective melting temperatures of the temperature measuring resistor wire, the housing, and the inorganic electric insulating powder so as to melt only the glass powder, and been cooled to thereby solidify the glass.2. The cryogenic temperature measuring resistor element according to claim 1 , wherein the temperature measuring resistor wire is made of an alloy of platinum and cobalt claim 1 , and has the shape of a coil.3. The cryogenic temperature measuring resistor element according to claim 2 , wherein the alloy of platinum and cobalt contains 0.5 mol % of cobalt claim 2 , ...

LOW EXPANSION SILICA-TITANIA ARTICLES WITH A TZC GRADIENT BY COMPOSITIONAL VARIATION

A glass article for use in Extreme Ultra-Violet Lithography (EUVL) is provided. The glass article includes a silica-titania glass having a compositional gradient through the glass article, the compositional gradient being defined by the functions: 2. The glass article of claim 1 , wherein f(x claim 1 , y claim 1 , z) is independent of x and y claim 1 , and the glass article comprises a unidirectional variation along the z-axis.3. The glass article of claim 2 , wherein f(x claim 2 , y claim 2 , z) is a stepped function along z claim 2 , and the glass article comprises a layered structure with discrete variations in composition between adjacent layers.4. The glass article of claim 3 , wherein the stepped function is monotonic.5. The glass article of claim 4 , wherein the steps in the stepped function are of constant amplitude.6. The glass article of claim 1 , wherein f(x claim 1 , y claim 1 , z) is independent of z claim 1 , and the glass article comprises multidirectional variations in the x claim 1 ,y plane.7. The glass article of claim 6 , wherein f(x claim 6 , y claim 6 , z)=c claim 6 , where c is a constant claim 6 , and the glass article comprises layers in the shape of generalized cylindrical surfaces of constant composition.8. The glass article of claim 7 , wherein the constant c has discrete values.9. The glass article of claim 1 , wherein [TiO] is between about 3.0 wt. % and about 12 wt. %.10. The glass article of claim 1 , wherein [TiO] is between about 5.0 wt. % and about 9.0 wt. %.11. The glass article of claim 1 , further comprising at least one dopant selected from the group consisting of fluorine claim 1 , OH claim 1 , oxides of aluminum claim 1 , boron claim 1 , sodium claim 1 , potassium claim 1 , magnesium claim 1 , calcium claim 1 , lithium and niobium and combinations thereof.12. A method for forming a silica-titania glass article having a compositional gradient claim 1 , the method comprising:mixing silica precursors and titania precursors to ...

METHOD AND DEVICE FOR MANUFACTURING A GLASS ARTICLE, AND A POWDER FOR FORMING A BONDED BODY

Provided is a manufacturing method for a glass article, including: a filling step (S) of interposing a powder (P), which is to be diffusion-bonded through heating, between a transfer container () and a refractory brick (); a pre-heating step (S) of heating the transfer container () after the filling step (S); and a molten glass supply step (S) of, while heating the transfer container (), causing a molten glass (GM) to pass through an inside of the transfer container () after the pre-heating step (S). In this method, the molten glass supply step (S) includes diffusion-bonding the powder (P) to form a bonded body () configured to fix the transfer container () to the refractory brick (). 1. A manufacturing method for a glass article comprising transferring molten glass by a transfer container made of a platinum material and coated with a refractory brick and forming the molten glass ,the method comprising:a filling step of interposing a powder, which is to be diffusion-bonded through heating, between the transfer container and the refractory brick;a pre-heating step of heating the transfer container after the filling step; anda molten glass supply step of, while heating the transfer container, causing the molten glass to pass through an inside of the transfer container after the pre-heating step,wherein the molten glass supply step comprises diffusion-bonding the powder to form a bonded body configured to fix the transfer container to the refractory brick.2. The manufacturing method for a glass article according to claim 1 , wherein a gap between the transfer container and the refractory brick in which the powder is filled in the filling step has a width of 7.5 mm or more.3. The manufacturing method for a glass article according to claim 1 , wherein the powder to be used in the filling step comprises aggregate having an average particle diameter of 0.8 mm or more.4. The manufacturing method for a glass article according to claim 1 , wherein the transfer container is ...

Method for growing crystal boule

A method for growing a crystal boule includes the steps of: periodically pulling upwardly a seed crystal dipped into a melt in a crucible to grow a first neck of the crystal boule below the seed crystal; and continuously pulling upwardly the seed crystal and the first neck of the crystal boule to grow a second neck of the crystal boule below the first neck. 1. A method for growing a crystal boule , comprising the steps of:(A) periodically pulling upwardly a seed crystal dipped into a melt in a crucible to grow a first neck of the crystal boule below the seed crystal; and(B) continuously pulling upwardly the seed crystal and the first neck of the crystal boule to grow a second neck of the crystal boule below the first neck.2. The method as claimed in claim 1 , wherein in step (A) claim 1 , the first neck of the crystal boule has a diameter increasing along a direction away from the seed crystal.3. The method as claimed in claim 2 , wherein in step (A) claim 2 , the diameter of the first neck increases from 15 mm to 25 mm.4. The method as claimed in claim 1 , wherein step (A) includes the sub-steps of:{'b': '1', '(A) pulling upwardly the seed crystal at a first time interval to grow an upper portion below the seed crystal, and'}{'b': '2', '(A) pulling upwardly the seed crystal and upper portion at a second time interval different from the first time interval to grow a lower portion below the upper portion, the first neck including the upper and lower portions.'}5. The method as claimed in claim 4 , wherein the upper portion has a thickness substantially equal to that of the lower portion.6. The method as claimed in claim 4 , wherein the upper portion has a diameter increasing from 15 mm to 20 mm along a direction away from the seed crystal claim 4 , and the lower portion has a diameter increasing from 20 mm to 25 mm along a direction away from the upper portion.71. The method as claimed in claim 4 , wherein in sub-step (A) claim 4 , the upper portion is grown at a ...

CRUCIBLE

In one embodiment, a crucible contains iridium or platinum as a main ingredient, and includes a bottom part and a tubular part. The tubular part includes a plurality of segments and an annular first thick part at a position at which the segments are adjacent to each other. In another embodiment, a crucible contains iridium or platinum as a main ingredient, and includes a bottom part and a tubular part. The tubular part includes a plurality of segments and an annular first welded part at a position at which the segments are adjacent to each other. 1. A crucible , comprising:a bottom part and a tubular part comprising iridium or platinum as a main ingredient;the tubular part connected to the bottom part, and comprising a plurality of segments; andan annular thick part connecting adjacent segments of the plurality of segments.2. The crucible according to claim 1 , wherein the annular thick part is a plurality of annular thick parts.3. The crucible according to or claim 1 , wherein the annular thick part protrudes from an outer periphery of the tubular part.4. The crucible according to claim 1 , wherein a segment of the tubular part which is adjacent to the bottom part has a greater thickness than another segment of the tubular part which is located adjacent an opening of the tubular part.5. A crucible claim 1 , comprising:a bottom part and a tubular part comprising iridium or platinum as a main ingredient, whereinthe tubular part comprises a plurality of segments, and an annular first welded part connecting adjacent segments of the plurality of segments.6. The crucible according to claim 5 , wherein the annular first welded part is a plurality of annular first welded parts.7. The crucible according to claim 5 , further comprising a second welded part which connects to the first welded part and is not parallel to the first welded part.8. The crucible according to claim 1 , comprising a bottom thick part connecting the tubular part to the bottom part.9. The crucible ...

FOAM GLASSY MATERIALS AND PROCESSES FOR PRODUCTION

Disclosed herein is a process for producing foam glassy materials. The process includes providing a precursor foam glassy formulation, the precursor foam glassy formulation comprising a micronized glassy material, in which the micronized glassy material being any one or any combination of ceramic opaque frits, transparent frits, flux frit, glazes, waste from kaolin processing, porcelain waste products, slag, cement, concrete, waste tile products and a foaming agent. The precursor foam glassy formulation is then processed to form a foam glassy product by firing the precursor foam glassy formulation to a temperature in a range from about 800° C. to about 900° C., followed by a step of annealing, followed by a step of cooling to produce a foam glassy product. The chemical, mechanical, physical properties of the final foam glassy material may be adjusted or tuned by adjusting the amounts of the various constituents making up the precursor foam glassy material. 1. A process of producing a foam glassy material produced pre-selected physical , structural , mechanical and chemical properties , comprising the steps of:a) providing a precursor foam glassy formulation, the precursor foam glassy formulation comprising a micronized glassy material, said micronized glassy material being any one or any combination of ceramic opaque frits, transparent frits, flux frit, glazes, waste from kaolin processing, porcelain waste products, slag, cement, concrete, waste tile products, foaming agents; andb) processing the precursor foam glass formulation to form foam glass, including a step of firing the precursor foam glassy formulation to a temperature in a range from about 800° C. to about 900° C., followed by a step of annealing, followed by a step of cooling to produce a foam glassy product.2. The process according to claim 1 , wherein after step a) including a step of shaping the precursor foam glassy formulation in a shape to give a desired shape to the foam glassy product.3. The ...

Quartz glass crucible

A quartz glass crucible including a bottom portion, a curved portion, and a straight body portion, where the quartz glass crucible includes an outer layer including opaque quartz glass containing bubbles therein, and an inner layer including transparent quartz glass, the outer layer includes a plurality of layers in a part of the straight body portion, out of the plurality of layers, one layer having a devitrification spot number of 50/cm3 or more and 70/cm3 or less when the quartz glass crucible is heated at 1600° C. for 24 hours, and a layer positioned inwards of the devitrifiable layer in a thickness direction of the quartz glass crucible is a low devitrification layer having a spot number of 2/cm3 or less when the quartz glass crucible is heated at 1600° C. for 24 hours. This provides a quartz glass crucible suppressed from deformation due to heating and excessive progression of devitrification.

SURFACE GLASS WITH EMBEDDED CERAMIC PARTICLES

Components of an electronic device, such as glass components, are susceptible to surface damage. Glass components can be strengthened by providing ceramic particles at the exposed surface of the glass. Ceramic particles can also provide optical features, such as color, opacity, and haze to enhance the appearance of the resulting composite article. Where ceramic particles are provided at the exposed surface, the ceramic particles can also produce a desired tactile feature. These features can be provided in various combinations and in different ways across different regions to produce a desired look and feel of the resulting composite article. 1. An electronic device comprising:a housing; and a glass body; and', 'ceramic particles embedded within the glass body and defining a portion of an outer surface of the composite article, wherein the outer surface forms a portion of an exterior surface of the electronic device., 'a composite article within the housing, the composite article comprising2. The electronic device of claim 1 , wherein the ceramic particles comprise:first ceramic particles at a first region of the outer surface; andsecond ceramic particles at a second region of the outer surface, wherein the first ceramic particles differ from the second ceramic particles in at least one of size, shape, color, or concentration.3. The electronic device of claim 1 , wherein the ceramic particles and the glass body both define the outer surface.4. The electronic device of claim 1 , further comprising a display for transmitting light through the composite article.5. The electronic device of claim 1 , wherein at least some of the ceramic particles extend outside the glass body.6. A composite article comprising:a first layer defining an outer surface of the composite article and comprising a first glass body and ceramic particles embedded within the first glass body; anda second layer adjacent to the first layer and comprising a second glass body, wherein a concentration of ...

SOLAR RADIATION RECEIVER HAVING AN ENTRY WINDOW MADE OF QUARTZ GLASS AND METHOD FOR PRODUCING AN ENTRY WINDOW

Common solar radiation receivers are equipped with a chamber for transmission of an operating gas which is directed along to an absorber for solar radiation for thermal absorption. The absorber has a dome-shaped entry window made of quartz glass, wherein the inner side facing the absorber assumes a nominal interior temperature Ti of at least 950° C. during proper use, preferably at least 1000° C., whereas the outer side facing away from the absorber is exposed to the environment and subject to risk of devitrification. The invention relates to modifying the known solar radiation receiver so that a high absorber temperature can be set and thus a high efficiency of the solar thermal heating is enabled, without increasing the risk of devitrification in the region of the outer side of the entry window. 1. A solar radiation receiver , said receiver comprising:a chamber configured to pass a working gas to an absorber for solar radiation so as to cause thermal absorption;the absorber being supported in the chamber anda dome-shaped window of quartz glass transmitting solar radiation, the window having an inside that faces the absorber and has a nominal internal temperature Ti of at least 950° C., and an outside that faces away from the absorber and is exposed to an ambient temperature Tu,wherein the window has a wall thickness d such that the outside of the window has a temperature Ta of less than 850° C., andwherein the temperature difference between inside temperature Ti and temperature Ta is at least 150° C., and the window has a region wherein the internal temperature Ti is a maximum internal temperature Ti of the window, and the wall thickness d in the region of said maximum internal temperature Ti is at least 7 mm.2. The solar radiation receiver according to claim 1 , wherein the wall thickness d is configured such that the outside has a temperature Ta of less than 800° C.3. The solar radiation receiver according to claim 1 , wherein the wall thickness d is at least 10 ...

VITREOUS SILICA CRUCIBLE AND METHOD FOR MANUFACTURING THE SAME

In an embodiment, a vitreous silica crucible includes a cylindrical straight body portion a corner portion formed at lower end of the straight body portion and a bottom portion connected with the straight body portion via the corner portion Moreover, the vitreous silica crucible includes a bubble-containing opaque layer constituting an outer layer, and a bubble-free transparent layer constituting an inner layer. A boundary surface, between the opaque layer and the transparent layer in at least the straight body portion a, forms a periodic wave surface in a vertical direction. The vitreous silica crucible can suppress deformation under high temperature. 1. A vitreous silica crucible , including a cylindrical straight body portion , a corner portion formed at bottom end of the straight body portion , and a bottom portion connected with the straight body portion via the corner portion , is characterized in comprising:a bubble-containing opaque layer constituting an outer layer of the crucible, and a bubble-free transparent layer constituting an inner layer of the crucible,a boundary surface between the opaque layer and the transparent layer of at least the straight body portion forming a periodic wave surface in at least one direction.2. The vitreous silica crucible according to claim 1 , wherein the boundary surface between the opaque layer and the transparent layer in the straight body portion and the corner portion forms the wave surface.3. The vitreous silica crucible according to claim 1 , wherein a traveling direction of the wave surface is a vertical direction of the straight body portion.4. The vitreous silica crucible according to claim 1 , wherein a traveling direction of the wave surface is a circumferential direction of the straight body portion.5. The vitreous silica crucible according to claim 1 , wherein a traveling direction of the wave surface is a combination of both a vertical direction and a circumferential direction of the straight body portion.6. ...

A Method for Producing a Foam Glass with High Open Pore Content

A method for producing foam glass with high open pore content using recycled waste glass. The size of the pores of the foam glass is small and uniform, and such foam glass is suitable for building material with thermal insulating and sound proofing properties. The foam glass produced by this method is lightweight, durable and has high compression strength.

QUARTZ GLASS CRUCIBLE AND MANUFACTURING METHOD THEREOF

In an exemplary embodiment, a quartz glass crucible includes: a high-aluminum-content layer B which is made of quartz glass having a relatively high average aluminum concentration and is provided to form an outer surface of the quartz glass crucible ; and a low-aluminum-content layer A which is made of quartz glass having a lower average aluminum concentration than that of the high-aluminum-content layer B and is provided on an inner side of the high-aluminum-content layer B, wherein the low-aluminum-content layer A includes an opaque layer made of quartz glass containing a large number of minute bubbles, and the high-aluminum-content layer B is made of transparent or translucent quartz glass having a lower bubble content than that of the opaque layer . The quartz glass crucible is capable of withstanding a single crystal pull-up step undertaken for a very long period of time. 1. A quartz glass crucible for pulling up a silicon single crystal , comprising:a high-aluminum-content layer which is made of quartz glass having a relatively high average aluminum concentration and is provided to form an outer surface of the quartz glass crucible; anda low-aluminum-content layer which is made of quartz glass having a lower average aluminum concentration than that in the high-aluminum-content layer and is provided on an inner side of the high-aluminum-content layer,wherein the low-aluminum-content layer includes an opaque layer made of quartz glass containing a large number of minute bubbles, andthe high-aluminum-content layer is made of transparent or translucent quartz glass having a lower bubble content than does the opaque layer.2. The quartz glass crucible according to claim 1 , further comprising:an inner transparent layer which is provided on an inner side of the opaque layer to form an inner surface of the quartz glass crucible and contains substantially no bubbles; andan outer transparent layer which is provided on an outer side of the opaque layer to form an outer ...

Thermally Tempered Glass Substrate Using CTE Mismatched Layers And Paste Mixtures For Transient Electronic Systems

A thermally tempered glass substrate for transient electronic systems (i.e., including electronic devices that visually disappear when triggered to do so) including two or more fused-together glass structures having different coefficient of thermal expansion (CTE) values disposed in an intermixed arrangement manner that generates and stores potential energy in the form of residual, self-equilibrating internal stresses. In alternative embodiments the substrate includes laminated glass sheets, or glass elements (e.g., beads or cylinders) disposed in a glass layer. A trigger device causes an initial fracture in the thermally tempered glass substrate, whereby the fracture energy nearly instantaneously travels throughout the thermally tempered glass substrate, causing the thermally tempered glass substrate to shatter into multiple small (e.g., micron-sized) pieces that are difficult to detect. Patterned fracture features are optionally provided to control the final fractured particle size. Electronic systems built on the substrate are entirely destroyed and dispersed during the transience event. 1. A thermally tempered glass substrate comprising:a first glass structure including a first glass material having a first coefficient of thermal expansion (CTE) value;a plurality of second glass structures respectively including one or more second glass materials respectively having a second CTE value, the second CTE value being different from the first CTE value,wherein the plurality of second glass structures are integrally attached to the first glass structure such that the difference between the first CTE value and the second CTE value generates residual tensile and compressive stresses, and such that the residual tensile and compressive stresses remain stable until said thermally tempered glass substrate is subjected to an externally applied initial fracture force sufficient to generate secondary fractures that propagate throughout said thermally tempered glass substrate, ...

METHOD FOR CONTROLLING THE FORMATION OF METALLIC NANOPARTICLES IN GLASS AND PRODUCTS THEREOF

A method of forming metallic nanoparticles in glass is disclosed that creates evenly distributed metallic nanoparticles with desired size in any glass type. 1. A method of producing nanoparticles in glass including the steps of: heating a combination of at least one raw glass material with a metal base material to a first temperature to form a glass precursor melt;', 'cooling the melt to provide the glass precursor material;, 'a) preparing a glass precursor material including;'}b) the glass precursor material then being ground to a predetermined particle size to form a ground glass precursor material;c) heating the ground glass precursor material to a second temperature for a predetermined period of time to at least partially bind particles of the glass precursor material to one another.2. The method of claim 1 , wherein the at least one raw glass material is at least one glass material selected from the group consisting of tellurite (TZN) claim 1 , germanate (GN) claim 1 , borate (BN) claim 1 , phosphate (PAg) claim 1 , borosilicate (commercial BK7) and silicate (SN claim 1 , SCN claim 1 , and commercial Gaffer Batch claim 1 , K100 and F2) glass.3. The method of claim 2 , wherein the at least one raw glass material is at least one raw glass material selected from the group consisting of TeO—ZnO—NaO (TZN) claim 2 , GeO—NaO (GN) claim 2 , BO—NaO (BN) claim 2 , PO—AgO (PAg) claim 2 , SiO—NaO (SN) claim 2 , SCN (SiO—CaO—NaO) and of commercial glass products from Gaffer Glass (Gaffer) claim 2 , Kugler glass (K100) claim 2 , Schott (BK7 and F2).4. The method of claim 1 , wherein the at least one raw glass material is a combination of at least two glass materials.5. The method of claim 1 , wherein the nanoparticles are metallic nanoparticles.6. The method of claim 1 , wherein the metal base material is selected from at least one noble metal claim 1 , metal alloy claim 1 , metal compound (metal oxide claim 1 , metal salt: metal chloride/sulfide/nitrite) or combinations ...

METHOD OF MANUFACTURING VITREOUS SILICA CRUCIBLE AND METHOD OF MANUFACTURING SILICON INGOT

A method of manufacturing of a vitreous silica crucible includes: fusing silica powder under a reduced pressure of −50 kPa or more and less than −95 kPa to form a transparent vitreous silica layer as an inner layer; fusing silica powder under a reduced pressure of 0 kPa or more and less than −10 kPa to form a bubble-containing vitreous silica layer as an intermediate layer; and fusing silica powder under a reduced pressure of −10 kPa or more and less than −50 kPa to form a semi-transparent vitreous silica layer as an outer layer. 1. A method of manufacturing of a vitreous silica crucible comprising the processes of: forming a silica powder layer on an inner surface of a rotating mold;fusing the silica powder layer, followed by solidifying, to form a vitreous silica layer, whereinfirst, the silica powder layer is fused in a predetermined thickness under a reduced pressure of −50 kPa or more and less than −95 kPa to form a transparent vitreous silica layer, then the silica powder layer is fused in a predetermined thickness under a reduced pressure of 0 kPa or more and less than −10 kPa to form a bubble-containing vitreous silica layer, then the silica powder layer is fused in a predetermined thickness under a reduced pressure of −10 kPa or more and less than −50 kPa to form a semi-transparent vitreous silica layer.2. The method of claim 1 , wherein temperature for forming the semi-transparent vitreous silica layer is 1600 deg. C. to 2600 deg. C.3. A method of manufacturing a silicon ingot comprising the processes of:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'obtaining silicon melt by melting polycrystalline silicon in a crucible manufactured by a method of , dipping an end of a seed crystal to the silicon melt, pulling a silicon ingot by pulling the seed crystal while rotating it, and thereafter recharging and melting polycrystalline silicon, and pulling another silicon ingot.'}4. The method of claim 3 , wherein Ba is added to the silicon melt. This ...

CARBON ELECTRODE AND METHOD FOR MANUFACTURING QUARTZ GLASS CRUCIBLE

A carbon electrode used for an arc discharge for manufacturing a quartz glass crucible, wherein at least one of a concave pattern and a convex pattern is formed on a surface of the carbon electrode in at least a range of 50 mm to 130 mm in a longitudinal direction of the carbon electrode from an end portion where the arc discharge takes place. Consequently, a carbon electrode that can suppress agglomeration of silica fume on the carbon electrode while manufacturing a quartz glass crucible is provided. 15-. (canceled)6. A carbon electrode used for an arc discharge for manufacturing a quartz glass crucible , whereinat least one of a concave pattern and a convex pattern is formed on a surface of the carbon electrode in at least a range of 50 mm to 130 mm in a longitudinal direction of the carbon electrode from an end portion where the arc discharge takes place.7. The carbon electrode according to claim 6 , whereinat least one of a plurality of concave portions and a plurality of convex portions are formed as the at least one of the concave pattern and the convex pattern, anda depth of the concave portions or a height of the convex portions is 2.0 mm or more and 10.0 mm or less, and with a surface of the carbon electrode not having the concave portions or the convex portions formed as a reference surface, the at least one of the concave portions and the convex portions are present in an area ratio of 10% or more and 90% or less in any range of 20 mm in the longitudinal direction×20 mm in a circumferential direction of the carbon electrode within the at least the range of 50 mm to 130 mm in the longitudinal direction of the carbon electrode.8. The carbon electrode according to claim 6 , wherein at least one of a groove and a projection is formed as the at least one of the concave pattern and the convex pattern.9. The carbon electrode according to claim 7 , wherein at least one of a groove and a projection is formed as the at least one of the concave pattern and the ...

MOLD AND METHOD FOR MANUFACTURING QUARTZ GLASS CRUCIBLE

A mold for manufacturing a quartz glass crucible by a rotary molding method, having a plurality of grooves that are concentric with respect to a mold rotation axis in at least a straight body portion of an inner surface of the mold, wherein the plurality of concentric grooves are non-penetrating grooves that do not penetrate the mold. This provides a mold for manufacturing a quartz glass crucible by a rotary molding method, having an inner surface made so that it is difficult for quartz powder to slide down when forming a quartz powder compact. 16-. (canceled)7. A mold for manufacturing a quartz glass crucible by a rotary molding method , comprisinga plurality of grooves that are concentric with respect to a mold rotation axis in at least a straight body portion of an inner surface of the mold, wherein the plurality of concentric grooves are non-penetrating grooves that do not penetrate the mold.8. The mold according to claim 7 , wherein the plurality of concentric grooves have a width of 0.3 mm or more and 2.5 mm or less claim 7 , a depth of 0.2 mm or more and 4 mm or less claim 7 , and a pitch of 3 mm or more and 20 mm or less.9. The mold according to claim 7 , wherein a material of the mold is stainless steel or carbon.10. The mold according to claim 8 , wherein a material of the mold is stainless steel or carbon.11. The mold according to claim 7 , wherein the plurality of concentric grooves are formed across a whole of the inner surface of the straight body portion of the mold.12. The mold according to claim 8 , wherein the plurality of concentric grooves are formed across a whole of the inner surface of the straight body portion of the mold.13. The mold according to claim 9 , wherein the plurality of concentric grooves are formed across a whole of the inner surface of the straight body portion of the mold.14. The mold according to claim 10 , wherein the plurality of concentric grooves are formed across a whole of the inner surface of the straight body portion ...

シリコン単結晶引上げ用黒鉛るつぼ

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

半導体単結晶引上用黒鉛ルツボ

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Quartz glass crucible and method of manufacturing the same

Ein bekannter Quarzglastiegel zum Kristallziehen weist eine Tiegelwandung auf, umfassend eine Außenschicht, die in einem äußeren Bereich mit einem Kristallisationspromotor versehen ist, der beim Aufheizen des Quarzglastiegels beim bestimmungsgemäßen Einsatz beim Kristallziehen eine Kristallisation von Quarzglas unter Bildung von Cristobalit bewirkt. Um ausgehend hiervor einen Quarzglastiegel mit langer Standzeit bereitzustellen wird vorgeschlagen, dass der Kristallisationspromotor eine in Quarzglas - zusätzlich zu Silicium - als Netzwerkbildner wirkende erste Komponente und eine in Quarzglas als Trennstellenbildner wirkende, alkalimetallfreie zweite Komponente enthält, und dass die besagten Komponenten in einem eine Schichtdicke von mehr als 0,2 mm aufweisenden Dotierungsbereich (8) der Außenschicht (6) enthalten und darin eingeschlossen sind. A known quartz glass crucible for crystal pulling has a crucible wall, comprising an outer layer which is provided in an outer region with a crystallization promoter which, when the quartz glass crucible is heated up and is used as intended in crystal pulling, causes crystallization of quartz glass to form cristobalite. In order to provide a quartz glass crucible with a long service life based on this, it is proposed that the crystallization promoter contains a first component which acts as a network former in quartz glass - in addition to silicon - and an alkali metal-free second component which acts as a separation point former in quartz glass, and that the said components all have a layer thickness of more than 0.2 mm doping region (8) of the outer layer (6) and are enclosed therein.

Producing glass with defined inhomogeneous optical properties, comprises preparing a mixture of different components, which differ with regard to their impact on glass properties, and exposing the mixture to the effect of forces

The method for producing glass with defined inhomogeneous optical properties, comprises preparing a mixture of different components, which differ with regard to their impact on glass properties, where each of the components are prepared in the form of mixture particles (1, 2) and masses or sizes depending on the glass properties are determined by the influence of the concerned components, exposing the mixture to the effect of forces, where the parameter and direction of action of the force are determined, so that the mixture particles change their positions relative to each other. The method for producing glass with defined inhomogeneous optical properties, comprises preparing a mixture of different components, which differ with regard to their impact on glass properties, where each of the components are prepared in the form of mixture particles (1, 2) and masses or sizes depending on the glass properties are determined by the influence of the concerned components, exposing the mixture to the effect of forces, where the parameter and direction of action of the force are determined, so that the mixture particles change their positions relative to each other on the basis of the different units of their masses and sizes, ending the effect of forces when the mixture particles have positions, which correspond to inhomogeneous optical properties to be achieved, and then melting the mixture and finally cooling up to solidification. Two optical glass types are used in the method and are borkron glass BK7 with refractive index of 1.5 and flint glass with refractive index of 1.8. The mixture is prepared from glass raw material, sand, soda, lime and additives as starting material. The mixture particles differ with regard to their masses and the mixture is mixed by centrifugal forces, the mixture particles differ with regard to their sizes and the mixture is mixed by vibrations and/or the mixture particles differ with regard to their masses and sizes and the mixture is mixed by ...

砒素化合物単結晶成長装置

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Vitreous silica crucible and manufacturing method thereof

본 발명은, 초크랄스키법(CZ법)에 의해 실리콘 단결정을 인상하기 위한, 또는 광학 유리 용융용의 실리카 유리 도가니 및, 실리카 유리 도가니의 제조 방법에 관한 것이다. The present invention relates to a silica glass crucible for pulling up a silicon single crystal by a Czochralski method (CZ method) or for melting an optical glass, and a method for producing a silica glass crucible.

化合物単結晶育成装置

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

석영 유리 도가니의 제조 방법 및 장치

본 발명은 SiO 2 내부층 입자가 회전 용융 몰드 내에서 유리화되는 석영 유리 도가니의 제조 방법으로부터 시작하며, 용융 몰드는 투명한 내부층을 획득하기 위해 가벼운 기체-함유 분위기의 플라즈마의 작용 하에서 적어도 일부가 열 쉴드로 덮히고, 적어도 일부의 가벼운 기체가 상기 용융 몰드로 상기 열 쉴드의 기체 입구를 통해 제공된다. 특히 낮은 기포 함량 및 에너지와 재료의 관점에서 최소의 노력을 갖는 내부층을 형성하기 위해 유리화 단계에 앞선 층-형성 단계가 제안되었고, 내부 층 입자의 SiO 2 의 입자층이 내부 벽 상에 형성되고, 여기서 플라즈마 영역 및 열 쉴드와 기체 입구는 모두 회전축에 수직인 적어도 일 방향으로 이동가능하며 이들을 유리화 단계 동안 측면으로 입자층의 방향으로 움직여서 상기 입자층을 유리화한다.

Silica glass crucible and method for manufacturing same

내부에 충전한 실리콘 융액의 융액면 진동을 억제할 수 있고, 또한 장수명인 실리콘 단결정 인상용 실리카 유리 도가니 및 그 제조 방법을 제공한다. 둘레벽부, 만곡부 및 저부를 갖는 실리콘 단결정 인상용 실리카 유리 도가니로서, 둘레벽부의 내면의 특정 영역에 복수 개의 미소 오목부를 구비하는 것을 특징으로 한다.

Silica glass crucible and manufacture method thereof

本发明提供一种能够抑制填充在坩埚内部的硅熔液的熔液面振动，并且，寿命长的单晶硅拉晶用氧化硅玻璃坩埚及其制造方法。本发明的单晶硅拉晶用氧化硅玻璃坩埚，其具有周壁部、弯曲部及底部，其中，在周壁部内面的特定区域上设置有多个微小凹部。

Method of producing coating on block foam glass

FIELD: technological processes.SUBSTANCE: invention relates to production of coating on block foam glass and can be used in industry of construction materials. Method of coating on block foam glass, which includes fine grinding mixture, filling foaming mixture into metal molds, sealing coating mixture on press, packing the compacted charge tile onto the foaming mixture surface, heating the foaming mixture, wherein the fine miner is added to the finely ground glass, as well as a mixture which includes finely ground high-alumina refractory boron, kaolin and liquid glass at ratio of 10:5:1, respectively, in amount of 20–25 mass%, in addition, foam-forming mixture is heated on the coating at rate of 15 °C/min at temperature of 820 °C with holding for 20 minutes.EFFECT: technical result of proposed invention consists in improvement of end product quality and acceleration of coating production process.1 cl, 3 tbl РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 2 726 015 C1 (51) МПК C03B 19/09 (2006.01) C03C 11/00 (2006.01) C03C 17/00 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ (52) СПК C03B 19/09 (2020.02); C03C 11/007 (2020.02); C03C 17/001 (2020.02) (21)(22) Заявка: 2019144461, 27.12.2019 (24) Дата начала отсчета срока действия патента: Дата регистрации: 08.07.2020 (45) Опубликовано: 08.07.2020 Бюл. № 19 Адрес для переписки: 308023, г. Белгород, ул. Садовая, 116 А, Здоренко Наталья Михайловна C 1 2 7 2 6 0 1 5 R U (54) СПОСОБ ПОЛУЧЕНИЯ ПОКРЫТИЯ НА БЛОЧНОМ ПЕНОСТЕКЛЕ (57) Реферат: Изобретение относится к области получения покрытия на прессе, укладку уплотненной плиткипокрытия на блочном пеностекле и может быть шихты на поверхность пенообразующей смеси, использовано в промышленности строительных нагрев пенообразующей смеси, причем в состав материалов. Технический результат смеси, применяемой при тонком измельчении, предлагаемого изобретения заключается в вводят тонкоизмельченное стекло, а также смесь, повышении качества ...

Silica container and method for producing the same

Silica vessel and process for production therof

본 발명은, Li, Na, K의 합계 농도가 50wt.ppm 이하인 기체형성용 원료분말과, Ca, Sr, Ba를 합계 50~2000wt.ppm으로 함유하는 내층형성용 원료분말을 제작하고, 형틀 내에서 기체의 가성형체를 형성하고, 그 내표면 상에 내층의 가성형체를 형성하고, 수소 혹은 헬륨 또는 이들 혼합 가스를 10vol.%를 초과하는 비율로 함유하는 가스 분위기에서, 방전 가열 용융법에 의해 기체와 내층의 가성형체의 내측으로부터 가열시킴으로써, 기체의 가성형체의 외주부분을 소결체로 함과 동시에, 기체의 가성형체의 내주부분 및 내층의 가성형체를 용융 유리체로 함으로써, 외주부분에 기포를 함유하는 기체와, 이 기체의 내표면 상에 형성된, 투명 실리카 유리로 이루어진 내층을 갖는 실리카 용기를 제조하는 방법이다. 이에 따라, 고 치수정밀도, 고 내열성을 갖는 실리카 용기를 저비용으로 제조 가능한 실리카 용기의 제조 방법 및 이러한 실리카 용기가 제공된다.

Process and apparatus for manufacturing a glass ingot from synthetic silica

합성 유리질 실리카 잉고트를 제조하는 방법 및 장치는 내화 노(31) 내의 도가니형 용기(35)에서 합성 유리질 실리카를 생성하는 단계와 용기 벽에 형성된 성형공(40)을 통하여 잉고트(43)를 연속적으로 배출하는 수단을 포함한다. 실리카는 실리카를 그 소결온도 이상으로 유지하도록 하는 역할을 하는 합성 버어너(33)에 의하여 용기 내에 증착될 수 있다. 배출되는 잉고트는 가동성 클램프(44)에 의하여 지지된다.

Silica powder, silica container, and method for producing the silica powder and container

본 발명은, 회전 대칭성을 가지며, 실리카를 주성분으로 하고, 적어도 외주부분에 기포를 함유하는 기체와, 이 기체의 내표면 상에 형성된, 투명 실리카 유리로 이루어진 내층을 구비하는 실리카 용기의 제조방법으로서, 적어도, 상기 내층을 성형하기 위한 원료분말로서, 입경이 10~1000μm이고, Ca, Sr, Ba을 50~5000wt.ppm의 합계 농도로 함유하고, 진공 하에서 1000℃로 가열했을 때의 수소분자의 방출량이 3×10 16 ~3×10 19 분자/g인 실리카 분말을 준비하고, 이 내층형성용 원료분말인 실리카 분말로부터, 상기 내층을 형성하는 실리카 용기의 제조방법이다. 이에 따라, 고치수정밀도이고, 내벽이 실질적으로 기포를 포함하지 않는 두꺼운 투명 실리카 유리층이면서, 고온에서도 높은 내구성을 갖는 실리카 용기를 저비용으로 제조할 수 있는 실리카 용기 및 그 제조방법, 그리고 이러한 실리카 용기를 제조하기 위한 실리카 분말 및 그 제조방법이 제공된다. This invention is a manufacturing method of a silica container which has rotationally symmetry and has a silica as a main component, and has a gas containing bubbles in at least an outer peripheral part and an inner layer made of transparent silica glass formed on the inner surface of the gas. At least, as a raw material powder for forming the inner layer, the particle size is 10 to 1000 μm, containing Ca, Sr, and Ba at a total concentration of 50 to 5000 wt. Ppm, and the hydrogen molecules when heated to 1000 ° C. under vacuum. A silica container having a discharge amount of 3 × 10 16 to 3 × 10 19 molecules / g is prepared, and a silica container which is a raw material powder for forming an inner layer is formed. Accordingly, a silica container and a method for producing the silica container having a high dimensional accuracy and a thick transparent silica glass layer having substantially no bubbles in the inner wall and having high durability even at a high temperature at low cost, and a method of manufacturing the silica container Silica powder for producing the same and a method for producing the same are provided.

Growing of silicon single crystal

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Method and equipment for production of decorative-facing tiles

FIELD: construction engineering. SUBSTANCE: this relates to production of material of expanded-aggregate type based on utilization of broken glass. Tiles are used in external and internal finishing operations of buildings and structures, floors, and assembling of artistic-decorative panels. Modular tile production equipment is adapted for flow-line production process. According to method, in primary enclosed thermal space, blank for production of decorative-facing tiles is subjected to heat not only from top by heater but also directly by gas-air flow of accumulated heat from bottom of earlier molten blank. For this purpose, bottom of thermal form is made as heat and gas conducting. Thermal form is additionally provided with lower heat-insulating cover, and thermal hood is installed for possible lifting above framework. Application of aforesaid method and equipment allows for improving quality of product, enhancing productive capacity, and cutting production cost. EFFECT: higher efficiency. 2 cl, 8 dwg ДЗУТУТсС ПЧ ГЭ РОССИЙСКОЕ АГЕНТСТВО ПО ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (19) (51) МПК ВИ” 2144 457‘ 13) Сл С 03 В 31/00 12) ОПИСАНИЕ ИЗОБРЕТЕНИЯ К ПАТЕНТУ РОССИЙСКОЙ ФЕДЕРАЦИИ (21), (22) Заявка: 99110304/03, 26.05.1999 (24) Дата начала действия патента: 26.05.1999 (46) Дата публикации: 20.11.1999 (56) Ссылки: КУ 2121462 СЛ, 10.11.98. КУ 2004507 СЛ, 15.12.93. ЗЧ 1546442 АЛ, 28.02.90. 34Р 3144130 А, 16.06.88. Быков А.С. Технология производства и применения стеклокремнезита в строительстве. - М.: 1984, с.126-130. (98) Адрес для переписки: 107143, Москва, ул.Н.Химушина, д.3, корп.3, кв.107, Никитину А.И. (71) Заявитель: Никитин Александр Иванович, Тепляков Александр Михайлович (72) Изобретатель: Никитин А.И., Тепляков А.М. (73) Патентообладатель: Никитин Александр Иванович (54) СПОСОБ ИЗГОТОВЛЕНИЯ ДЕКОРАТИВНО-ОБЛИЦОВОЧНЫХ ПЛИТ НА ОСНОВЕ СТЕКЛОБОЯ И МОДУЛЬНАЯ УСТАНОВКА ДЛЯ ИХ ПОТОЧНОГО ПРОИЗВОДСТВА (57) Реферат: Изобретение относится к производству материала типа стеклокремнезит ...

Silica glass crucible for pulling up silicon single crystal and method for manufacturing thereof

(과제) 실리콘 단결정 중에 SiO 가스의 기포가 취입되는 것에 의한 공동(空洞;cavity) 결함의 발생을 방지하는 것이 가능한 석영 유리 도가니를 제공한다. (Problem) Provided is a quartz glass crucible capable of preventing the occurrence of cavity defects caused by bubbles of SiO gas in the silicon single crystal. (해결 수단) 실리콘 단결정 인상용 석영 유리 도가니는, 다수의 기포를 포함하는 불투명 석영 유리층으로 이루어지는 외층과, 실질적으로 기포를 포함하지 않는 투명 석영 유리층으로 이루어지는 내층을 구비하고 있다. 도가니 직동부 및 만곡부의 내표면의 적어도 일부는, 깊이 50㎛ 이상 450㎛ 이하의 다수의 흠집이 형성된 요철면이며, 도가니 저부(底部)의 내표면 중, 저부의 중심으로부터 일정 범위 내의 영역은, 실질적으로 흠집이 형성되어 있지 않은 평활면이다. 도가니 직동부의 내표면에 형성된 흠집을 기점으로 하여 발생한 SiO 가스의 기포는 거의 수직으로 부상하기 때문에, 인상 중의 실리콘 단결정에 취입되는 일 없이, 로(爐) 내 공간으로 방출된다. (Solving means) The quartz glass crucible for pulling up a silicon single crystal is provided with an outer layer made of an opaque quartz glass layer containing a large number of bubbles, and an inner layer made of a transparent quartz glass layer substantially free of bubbles. At least a part of the inner surfaces of the crucible linear motion portion and the curved portion is an uneven surface on which a plurality of scratches having a depth of 50 µm or more and 450 µm or less are formed, and an area within a predetermined range from the center of the bottom portion of the inner surface of the crucible bottom, It is a smooth surface where substantially no scratches are formed. Since bubbles of SiO gas, which originate from scratches formed on the inner surface of the crucible linear movement portion, float almost vertically, they are discharged into the furnace space without being blown into the silicon single crystal during pulling. 실리콘 단결정, 도가니, 기포, 흠집 Silicon single crystal, crucible, bubble, scratch

Method and apparatus for producing a crucible of quartz glass

본 발명은 SiO 2 내부층 입자가 회전 용융 몰드 내에서 유리화되는 석영 유리 도가니의 제조 방법으로부터 시작하며, 용융 몰드는 투명한 내부층을 획득하기 위해 가벼운 기체-함유 분위기의 플라즈마의 작용 하에서 적어도 일부가 열 쉴드로 덮히고, 적어도 일부의 가벼운 기체가 상기 용융 몰드로 상기 열 쉴드의 기체 입구를 통해 제공된다. 특히 낮은 기포 함량 및 에너지와 재료의 관점에서 최소의 노력을 갖는 내부층을 형성하기 위해 유리화 단계에 앞선 층-형성 단계가 제안되었고, 내부 층 입자의 SiO 2 의 입자층이 내부 벽 상에 형성되고, 여기서 플라즈마 영역 및 열 쉴드와 기체 입구는 모두 회전축에 수직인 적어도 일 방향으로 이동가능하며 이들을 유리화 단계 동안 측면으로 입자층의 방향으로 움직여서 상기 입자층을 유리화한다. The present invention is a light gas to obtain a transparent inner layer begins, the molten mold is from the production method of the quartz glass crucible that is vitrified in the SiO 2 interlayer particle rotates molten mold - at least a portion under the action of a plasma in an atmosphere containing heat Shielded, and at least some light gas is provided through the gas inlet of the heat shield to the molten mold. In particular, a layer-forming step prior to the vitrification step has been proposed to form an inner layer with minimal bubble content and minimal effort in terms of energy and material, a layer of SiO 2 of inner layer particles is formed on the inner wall, Wherein both the plasma region and the heat shield and the gas inlet are movable in at least one direction perpendicular to the axis of rotation and are moved laterally in the direction of the particle layer during the vitrification step to vitrify the particle layer.

Method for producing quartz glass crucible

Silica powder, silica container, and method for producing the silica powder and container

本发明是一种二氧化硅容器的制造方法，该二氧化硅容器具备：基体，其具有旋转对称性，以二氧化硅作为主成分，且至少在外周部分含有气泡；以及内层，其被形成在该基体的内表面上，并由透明二氧化硅玻璃所构成；其中，所述二氧化硅容器的制造方法，至少准备二氧化硅粉来作为用以形成前述内层的原料粉，并利用该内层形成用原料粉即二氧化硅粉来形成前述内层，该二氧化硅粉，其粒径为10～1000μm，含有合计浓度为50～5000重量ppm(wt.ppm)的Ca、Sr、Ba，且在真空下加热至1000℃时的氢分子的放出量为3×10 16 ～3×10 19 分子/g。由此，提供一种二氧化硅容器及其制造方法，该二氧化硅容器是高尺寸精确度，且该二氧化硅容器的内壁是实质上不含气泡且厚度大的透明二氧化硅玻璃层，而在高温下也具有高度耐久性，并能以低成本来制造；以及提供一种用以制造这样的二氧化硅容器的二氧化硅粉及其制造方法。

Silica vessel and process for producing same

본 발명은, 실리카 입자인 제1 원료 분말에 Al 화합물 또는 결정핵제를 첨가하여 혼합 분말로 하는 공정, 감압용 구멍을 가지는 외형 틀을 회전시키면서, 외형 틀의 내벽에 혼합 분말을 도입하여 소정 형상으로 가성형하는 공정, 가성형체를 외주측으로부터 감압하여 탈가스를 행함과 함께, 가성형체의 내측으로부터 고온 가열함으로써, 가성형체의 외주 부분을 소결체로 함과 함께 내측 부분을 용융 유리체로 한 실리카 기체를 형성하는 공정, 실리카 기체의 내측으로부터, 제1 원료 분말보다 실리카 순도가 높은 제2 원료 분말을 산포하면서, 내측에서부터 고온 가열함으로써, 실리카 기체의 내표면에 투명 실리카 유리층을 형성하는 공정을 포함하는 실리카 용기의 제조 방법이다. 이에 따라, 고 치수정밀도, 고 내구성, 저방출가스성의 실리카 용기를, 저렴하고 비교적 저품위의 실리카 분체를 주원료로 하여, 투입 에너지량을 감소시키고, 저비용으로 제조하기 위한 실리카 용기의 제조 방법이 제공된다. The present invention is a step of adding an Al compound or a crystal nucleating agent to a first raw material powder, which is silica particles, to form a mixed powder, while rotating the outer mold having a hole for pressure reduction, and introducing the mixed powder into the inner wall of the outer mold to have a predetermined shape. The step of caustic molding and degassing by depressurizing the cauldron from the outer circumferential side, and heating it at a high temperature from the inside of the cauldron, makes the outer circumferential portion of the caustic body a sintered body and the silica gas containing the inner portion as a molten glass body. Forming a transparent silica glass layer on the inner surface of the silica gas by heating at a high temperature from the inside while dispersing the second raw material powder having a higher purity than the first raw material powder from the inside of the silica gas. It is a manufacturing method of a silica container. Thereby, a method for producing a silica container for producing a high dimensional precision, high durability, and low emission gas silica container as a main raw material of inexpensive and relatively low quality silica powder is used to reduce the amount of input energy and to produce at low cost. .

Method for evaluating suitability of silica powder for manufacturing of silica-glass crucible for pulling silicon single crystal

本发明提供一种适合于单晶硅提拉(pulling？of？silicon？single？crystal)用石英玻璃坩埚(vitreous？silica？crucible)中的无气泡层(bubble？layer)的形成的石英粉的评估方法，其具有：测量石英粉的石英粒子间的间隙率的工序、将所述石英粉熔融的工序、测量将熔融石英粉冷却固化而得的石英玻璃块的气泡含有率(bubble？content？rate)的工序、以及根据所述石英粉的间隙率和所述石英玻璃块的气泡含有率来判定是否是合适的石英粉的工序。

Silica Container and Method for Producing Same

본 발명은, 회전 대칭성을 갖는 실리카 기체를 갖춰 이루어진 실리카 용기를 제조하는 방법으로서, 감압용 홀을 갖는 탄소제 외측 몰드를 회전시키면서, 외측 몰드의 내벽에 기체용 원료분(실리카 입자)을 도입하고, 소정의 형상으로 가성형하는 공정, 실리카 기체의 가성형체의 내주측에서 H 2 가스를 10vol.%를 넘는 비율로 함유하는 환원성 가스를 공급하면서, 실리카 기체의 가성형체를 외주측부터 감압하여 탈가스함과 동시에, 탄소 전극에 의한 방전 가열 용융법으로 실리카 기체의 가성형체의 내측부터 가열함으로써, 실리카 기체의 가성형체의 외주 부분을 소결체로 함과 동시에, 내측 부분을 용융 유리체로 하고, 실리카 기체를 형성하는 공정을 포함하는 실리카 용기의 제조방법이다. 이에 의해, 고치수 정밀도, 고내열 변형성을 갖는 실리카 용기를, 실리카를 주성분으로 하는 분체를 주원료로, 저비용으로 제조할 수 있는 실리카 용기의 제조방법, 및, 이 같은 실리카 용기가 제공된다. The present invention is a method of manufacturing a silica container having a silica gas having rotational symmetry, wherein a gas raw material powder (silica particles) is introduced into an inner wall of an outer mold while rotating a carbon outer mold having a pressure reducing hole. Process of forming a predetermined shape, depressurizing the deformable body of the silica gas from the outer circumferential side while supplying a reducing gas containing H 2 gas at a ratio of more than 10 vol.% From the inner circumferential side of the preform of the silica gas. At the same time as the gas, the outer periphery of the caustic molded body of silica gas is made of sintered body and the inner part is made of molten glass body by heating from the inside of the caustic molded body of silica gas by a discharge heating melting method using a carbon electrode. Silica container manufacturing method comprising the step of forming a. Thereby, the manufacturing method of the silica container which can manufacture the silica container which has high dimension precision and high heat resistance strain as a main raw material with the powder which has a silica as a main component, and such a silica container are provided.

Method for producing high purity silica crucible by electrolytic refining, mfg. method of crucible and pulling method

本发明提供了一种内部杂质浓度较低的高纯度石英坩埚及其制造方法。通过高纯度石英玻璃坩埚的制造方法制造出这样一种坩埚：从内侧表面开始1mm深度以内所含的Na和Li每一种的含量至少小于0.05ppm，其中，在通过电弧等离子体加热位于中空的旋转模具内表面上的原料石英粉来制造石英坩埚时，通过在模具和电弧极之间施加电压、以便将熔融石英玻璃层内含有的杂质金属迁移到外侧，来提高熔融石英粉层的纯度。该方法包括：在电弧熔解过程中将电弧极的电位保持在±500V范围内，向与地绝缘的模具施加－1000V到－20000V的电压，向外侧的未熔石英粉层施加高压。

Production of decorative glass product

(57)【要約】本公報は電子出願前の出願データであるた め要約のデータは記録されません。

Apparatus and Method for manufacturing semiconductor single crystal ingot using CUSP magnetic field

본 발명은 커스프 자기장을 이용한 반도체 단결정 잉곳 제조장치 및 제조방법을 개시한다. 본 발명에 따른 커스프 자기장을 이용한 반도체 단결정 잉곳 제조장치는, 반도체 융액을 수용하는 도가니, 도가니를 회전시키는 도가니 회전수단, 도가니 측벽 주위에 설치된 히터 및 종자결정에 의해 도가니에 수용된 반도체 융액으로부터 단결정을 인상하는 인상수단을 포함하는 쵸크랄스키(Czochralsky) 법을 이용한 반도체 단결정 잉곳 제조장치에 있어서, 상기 도가니 주변에 설치되고, 자기장의 수직성분이 0인 ZGP(Zero Gauss Plane)의 중앙 위치가 단결정 잉곳의 고액 계면을 기준으로 -30㎜ ~ 60㎜에 위치하며 상부 자기장과 하부 자기장의 세기 비율을 나타내는 R값이 1보다 큰 커스프(CUSP) 자기장을 인가하고 상기 고액 계면에서의 자기장이 상기 도가니와 융액이 만나는 지점에서의 자기장 보다 상대적으로 약자기장을 인가하는 자기장 인가수단;을 더 포함하는 것을 특징으로 한다. The present invention discloses an apparatus and method for producing a semiconductor single crystal ingot using a cusp magnetic field. The apparatus for manufacturing a semiconductor single crystal ingot using a cusp magnetic field according to the present invention comprises a crucible containing a semiconductor melt, a crucible rotating means for rotating the crucible, a heater provided around the crucible sidewall, and a single crystal from a semiconductor melt contained in the crucible by seed crystals. In the apparatus for manufacturing a semiconductor single crystal ingot using the Czochralsky method including a pulling means for pulling up, the single crystal ingot is disposed around the crucible and has a center position of a zero gauge ZGP (Zero Gauss Plane) having a vertical component of zero magnetic field. A CUSP magnetic field is placed at -30 mm to 60 mm with respect to the solid-liquid interface of which the intensity value of the upper magnetic field and the lower magnetic field is greater than 1, and the magnetic field at the solid-liquid interface is Magnetic field applying means for applying a weak magnetic field relatively than the magnetic field at the point where the melt meets; And it characterized in that. 쵸크랄스키(CZ)법, 커스프(CUSP) 자기장, 고액 계면, ZGP(Zero Gauss Plane) Czochralski (CZ) method, CUSP magnetic field, solid interface, ZGP (Zero Gauss Plane)

Graphite crucible with the cone shape at the bottom part, which is used in growing SiC single crystal

본 발명은 실리콘 카바이드 분말의 승화 효율이 향상되도록 도가니의 바닥면에 돌출물이 구비된 실리콘 카바이드 단결정 제조용 흑연 도가니에 관한 것이다. The present invention relates to a graphite crucible for producing silicon carbide single crystals having protrusions on the bottom surface of the crucible so as to improve the sublimation efficiency of the silicon carbide powder. 본 발명의 도가니는, 원형의 저면을 가지며, 저면으로부터 상부로 갈수록 점차적으로 직경이 감소하여 상단부가 원형의 상면을 이루며, 하단 직경(D L )이 도가니 내경의 40∼60%, 상단 직경(D U )이 도가니 내경의 20∼40%, 높이가 도가니 내부 높이의 20∼40%인 돌출물(14)이 내부 바닥면 중앙에 구비된 구조로서, 상기 원뿔형 돌출물에 본 발명의 특징이 있다. The crucible of the present invention has a circular bottom face, the diameter gradually decreases from the bottom to the top, and the upper end forms a circular top face, and the bottom diameter D L is 40 to 60% of the crucible inner diameter and the top diameter D U ) is a structure in which a protrusion 14 having a diameter of 20 to 40% of a crucible inner diameter and a height of 20 to 40% of a crucible's inner height is provided at the center of the inner bottom surface. 본 발명의 도가니에 구비된 상기 돌출물은 가열되는 원료 분말의 승화 효율을 높여 줌으로써 카바이드 단결정의 표면 품질을 향상시키는 동시에, 도가니 내부에 잔류하는 재결정화한 원료 분말의 양을 감소시켜 실리콘 카바이드 단결정 제조 원가의 절감이 가능한 장점이 있다. The protrusion provided in the crucible of the present invention improves the surface quality of the carbide single crystal by increasing the sublimation efficiency of the heated raw powder, and at the same time reduces the amount of recrystallized raw powder remaining in the crucible to produce silicon carbide single crystal. The savings are possible.

Method of manufacturing vitreous silica crucible, vitreous silica crucible

本发明提供一种利用废玻璃制造具有透明层的氧化硅玻璃坩埚的方法。根据本发明，一种氧化硅玻璃坩埚的制造方法，用于制造单晶或多晶硅锭，所述坩埚具备玻璃化工序，其中，对具有坩埚形状的氧化硅粉末烧结体，从坩埚内面侧对所述氧化硅粉末烧结体进行电弧熔化而使对所述氧化硅粉末烧结体的厚度方向上的全部或局部进行玻璃化，并且具备：(1)进行所述电弧熔化时从外面侧对所述氧化硅粉末烧结体进行减压，(2)进行所述电弧熔化时在所述氧化硅粉末烧结体的内面散布氧化硅粉而在内面侧形成合成氧化硅玻璃层，之中的至少一种工序。

Method of producing glass-silica based on mining wastes

FIELD: glass. SUBSTANCE: invention relates to production of glass-silica. Method of producing glass-silica includes sieving, mixing, placing in mould a lower layer, which is mixture of mining wastes with liquid glass with mass ratio 3:1 respectively. Grinding is carried out, placing in mould an upper layer, which is a mixture of granules of packing glass with liquid glass with mass ratio 10:1. Then, sintering, annealing, cutting and quality control. EFFECT: technical result consists in elimination of a number of labour-consuming process operations, sintering is performed at lower temperature. 1 cl, 2 tbl РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (51) МПК C03B 19/09 (13) 2 580 855 C1 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ (21)(22) Заявка: ИЗОБРЕТЕНИЯ К ПАТЕНТУ 2015107584/03, 04.03.2015 (24) Дата начала отсчета срока действия патента: 04.03.2015 (45) Опубликовано: 10.04.2016 Бюл. № 10 (73) Патентообладатель(и): Автономная некоммерческая организация высшего профессионального образования "Белгородский университет кооперации, экономики и права" (RU) 2 5 8 0 8 5 5 R U (54) СПОСОБ ПОЛУЧЕНИЯ СТЕКЛОКРЕМНЕЗИТА НА ОСНОВЕ ОТХОДОВ ГОРНОДОБЫВАЮЩЕЙ ПРОМЫШЛЕННОСТИ (57) Реферат: Изобретение относится к производству смесь отходов горнодобывающей стеклокремнезита. Технический результат промышленности с жидким стеклом при массовом изобретения заключается в устранении ряда соотношении 3:1 соответственно. Проводят трудоемких технологических операций, при этом помол, укладку в формы верхнего слоя, в качестве спекание осуществляют при более низкой которого используют смесь гранул тарного температуре. Способ получения стеклокремнезита стекла с жидким стеклом при массовом включает рассев, смешение, укладку в формы соотношении 10:1. Затем осуществляют спекание, нижнего слоя, в качестве которого используют отжиг, обрезку и контроль качества. 2 табл. Стр.: 1 C 1 C 1 Адрес для переписки: 308023, г. Белгород, Садовая, 116А, ректору Автономной некоммерческой ...

Method of producing glass-silica

Изобретение относится к области получения стеклокремнезита. Техническим результатом изобретения является устранение технологической операции послойной засыпки нижнего и верхнего слоев стеклогранулята, при этом спекание осуществляется при более низкой температуре. Способ включает подготовку гранул стекла, спекание, отжиг, огненную полировку поверхности, вырезку блоков алмазным инструментом, контроль качества готовых изделий. В качестве стеклосодержащего материала используют смесь, полученную из стеклогранулята из боя стекол с гелем оксида кремния при массовом соотношении 20:1, в который предварительно вводят в количестве 0,1 мас.% красящие соли кобальта, хрома, никеля, марганца, железа. Спекание проводят при температуре 850°C. 2 табл. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (51) МПК C03B 19/06 (13) 2 580 558 C1 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ (21)(22) Заявка: ИЗОБРЕТЕНИЯ К ПАТЕНТУ 2015106543/03, 25.02.2015 (24) Дата начала отсчета срока действия патента: 25.02.2015 (45) Опубликовано: 10.04.2016 Бюл. № 10 C 1 Адрес для переписки: 308023, г. Белгород, Садовая, 116А, Ректору Автономной некоммерческой организации высшего профессионального образования "Белгородский университет кооперации, экономики и права" Теплову В.И. R U (54) СПОСОБ ПОЛУЧЕНИЯ СТЕКЛОКРЕМНЕЗИТА (57) Реферат: Изобретение относится к области получения инструментом, контроль качества готовых стеклокремнезита. Техническим результатом изделий. В качестве стеклосодержащего изобретения является устранение технологической материала используют смесь, полученную из операции послойной засыпки нижнего и верхнего стеклогранулята из боя стекол с гелем оксида слоев стеклогранулята, при этом спекание кремния при массовом соотношении 20:1, в осуществляется при более низкой температуре. который предварительно вводят в количестве 0,1 Способ включает подготовку гранул стекла, мас.% красящие соли кобальта, хрома, никеля, спекание, отжиг, огненную полировку марганца, железа. Спекание ...

Quartz glass crucible for pulling silicon single crystal and method of producing the same

결정 결함이 없는 실리콘단결정을 인상할 수 있음과 동시에 실리콘단결정의 단결정화율을 대단히 향상시킬 수 있는 실리콘단결정 인상용 석영 유리 도가니 및 그의 제조방법을 제공한다. 반투명 석영 유리층의 도가니 기체와, 그 도가니 기체의 내벽면에 형성된 투명 석영 유리층으로 된 실리콘단결정 인상용 석영 유리 도가니에 있어서, 실리콘단결정 인상 후의 도가니 내면의 1mm 이내에 지름 0.5mm 이상의 기포 팽창이 존재하지 않도록 하였다. 실리콘단결정, 석영 유리 도가니

Manufacturing method of quartz glass tube

Vitreous carbon-coated graphite part used for silicon crystal production and method for producing the same

Quartz glass crucible, method for producing same, and method for producing monocrystalline silicon

본 발명은, 석영 유리로 이루어지며, 도가니 형상을 갖는 도가니 기재를 준비하는 공정과, 직접법 또는 스트법에 의해 합성 석영 유리재를 제작하는 공정과, 상기 합성 석영 유리재를, 분쇄하는 일없이 도가니 형상으로 가공하는 공정과, 상기 도가니 형상으로 가공한 합성 석영 유리재를, 상기 도가니 기재의 내면에 용착하는 공정을 포함하는 석영 유리 도가니의 제조 방법이다. 이에 의해, 실리콘 단결정의 제조 시의 도가니 자체에 기인하는 실리콘 단결정의 유전위화를 회피하는 한편, 높은 내열성을 갖는 석영 유리 도가니 및 그 제조 방법, 및 그러한 석영 유리 도가니를 이용한 실리콘 단결정의 제조 방법이 제공된다.

Growing method of sapphire crystal and sapphire crystal grower

PURPOSE: A method for growing a sapphire crystal and a sapphire crystal grower are provided to accelerate growth by supplying and heating alumina into a crucible. CONSTITUTION: Alumina is supplied to a crucible part (20). The crucible part is heated by a carbon heater (30) in a wall part. The alumina is melted by the heater. A seed is in contact with the melted alumina. A sapphire single crystal (200) is grown from the melted alumina.